Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STF5NK100Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp5nk100z-datasheets-5519.pdf | 1kV | 3.5A | TO-220-3 Full Pack | 10.4mm | 9.3mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 3.7Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | STF5N | 3 | Single | 30W | 1 | FET General Purpose Power | 22.5 ns | 7.7ns | 19 ns | 51.5 ns | 3.5A | 30V | SILICON | ISOLATED | SWITCHING | 1000V | 3.75V | 30W Tc | TO-220AB | 250 mJ | 1kV | N-Channel | 1154pF @ 25V | 3.7 Ω @ 1.75A, 10V | 4.5V @ 100μA | 3.5A Tc | 59nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| PSMN4R8-100PSEQ | Nexperia USA Inc. | $1.94 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/nexperiausainc-psmn4r8100pseq-datasheets-4186.pdf | TO-220-3 | 3 | 12 Weeks | IEC-60134 | SINGLE | 3 | 1 | R-PSFM-T3 | 120A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 405W Tc | TO-220AB | 693A | 0.005Ohm | 542 mJ | N-Channel | 14400pF @ 50V | 5m Ω @ 25A, 10V | 4V @ 1mA | 120A Tj | 278nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB11NM80T4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Surface Mount | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb11nm80t4-datasheets-4117.pdf | 800V | 11A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.75mm | 4.6mm | 10.4mm | Lead Free | 2 | 26 Weeks | No SVHC | 400mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB11N | 3 | Single | 30 | 150W | 1 | FET General Purpose Power | R-PSSO-G2 | 22 ns | 17ns | 15 ns | 46 ns | 11A | 30V | SILICON | SWITCHING | 4V | 150W Tc | 44A | 800V | N-Channel | 1630pF @ 25V | 400m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 43.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| STF33N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf33n60m2-datasheets-4194.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | 3 | 16 Weeks | 329.988449mg | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STF33N | 1 | Single | NOT SPECIFIED | 1 | 16 ns | 9.6ns | 9 ns | 109 ns | 26A | 25V | SILICON | ISOLATED | SWITCHING | 35W Tc | TO-220AB | 600V | N-Channel | 1781pF @ 100V | 125m Ω @ 13A, 10V | 4V @ 250μA | 26A Tc | 45.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FDP61N20 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdp61n20-datasheets-4918.pdf | 200V | 61A | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | Lead Free | 3 | 7 Weeks | 4.535924g | No SVHC | 41MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | FAST SWITCHING | Tin | No | 61A | e3 | 200V | Single | 417W | 1 | FET General Purpose Power | 40 ns | 215ns | 170 ns | 125 ns | 6.1A | 30V | SILICON | SWITCHING | 5V | 417W Tc | TO-220AB | 200V | N-Channel | 3380pF @ 25V | 41m Ω @ 30.5A, 10V | 5V @ 250μA | 61A Tc | 75nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IRFPE50PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfpe50pbf-datasheets-4213.pdf | 800V | 7.8A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 1.2Ohm | 3 | 5.45mm | No | 1 | Single | 190W | 1 | TO-247-3 | 3.1nF | 19 ns | 38ns | 39 ns | 120 ns | 7.8A | 20V | 800V | 800V | 4V | 190W Tc | 980 ns | 1.2Ohm | 800V | N-Channel | 3100pF @ 25V | 4 V | 1.2Ohm @ 4.7A, 10V | 4V @ 250μA | 7.8A Tc | 200nC @ 10V | 1.2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPB110N20N3LFATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ 3 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipb110n20n3lfatma1-datasheets-4219.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 13 Weeks | EAR99 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 200V | 200V | 250W Tc | 11A | 352A | 0.011Ohm | 560 mJ | N-Channel | 650pF @ 100V | 11m Ω @ 88A, 10V | 4.2V @ 260μA | 88A Tc | 76nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB4229PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irfb4229pbf-datasheets-4222.pdf | TO-220-3 | 10.6426mm | 16.51mm | 4.82mm | Lead Free | 3 | 12 Weeks | No SVHC | 46MOhm | 3 | EAR99 | No | Single | 330mW | 1 | FET General Purpose Power | 31ns | 21 ns | 30 ns | 46A | 30V | 250V | SILICON | DRAIN | SWITCHING | 5V | 330W Tc | TO-220AB | 290 ns | 250V | N-Channel | 4560pF @ 25V | 5 V | 46m Ω @ 26A, 10V | 5V @ 250μA | 46A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| STW3N150 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stfw3n150-datasheets-1364.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | Tin | No | e3 | STW3N | 3 | Single | 140W | 1 | FET General Purpose Power | 24 ns | 47ns | 61 ns | 45 ns | 1.3A | 30V | SILICON | SWITCHING | 1500V | 4V | 140W Tc | 2.5A | 9Ohm | 450 mJ | 1.5kV | N-Channel | 939pF @ 25V | 9 Ω @ 1.3A, 10V | 5V @ 250μA | 2.5A Tc | 29.3nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| STF23N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf23n80k5-datasheets-4257.pdf | TO-220-3 Full Pack | Lead Free | 17 Weeks | ACTIVE (Last Updated: 2 weeks ago) | EAR99 | NOT SPECIFIED | STF23 | NOT SPECIFIED | 16A | 800V | 35W Tc | N-Channel | 1000pF @ 100V | 280m Ω @ 8A, 10V | 5V @ 100μA | 16A Tc | 33nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQA11N90C-F109 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-fqa11n90cf109-datasheets-4133.pdf&product=onsemiconductor-fqa11n90cf109-6828305 | TO-3P-3, SC-65-3 | 15.8mm | 18.9mm | 5mm | Lead Free | 3 | 10 Weeks | 6.401g | No SVHC | 1.1Ohm | 3 | ACTIVE (Last Updated: 17 hours ago) | yes | Tin | NOT SPECIFIED | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 60 ns | 130ns | 85 ns | 130 ns | 11A | 30V | SILICON | SWITCHING | 5V | 300W Tc | 44A | 960 mJ | 900V | N-Channel | 3290pF @ 25V | 1.1 Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 80nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| AUIRF4905 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-auirf4905-datasheets-4143.pdf | TO-220-3 | 10.66mm | 16.51mm | 4.82mm | 3 | 16 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | Single | 200W | 1 | Other Transistors | 18 ns | 99ns | 96 ns | 61 ns | 74A | 20V | SILICON | DRAIN | SWITCHING | 55V | -2V | 200W Tc | TO-220AB | 260A | 0.02Ohm | -55V | P-Channel | 3400pF @ 25V | 20m Ω @ 38A, 10V | 4V @ 250μA | 74A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPP320N20N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp320n20n3gxksa1-datasheets-4150.pdf | TO-220-3 | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 136W | 1 | Not Qualified | 11 ns | 9ns | 4 ns | 21 ns | 34A | 20V | 200V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 136W Tc | TO-220AB | N-Channel | 2350pF @ 100V | 32m Ω @ 34A, 10V | 4V @ 90μA | 34A Tc | 29nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| CSD19505KCS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-220-3 | 10.16mm | 4.7mm | 8.7mm | Lead Free | 3 | 12 Weeks | 6.000006g | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | 4.58mm | EAR99 | AVALANCHE RATED | Tin | not_compliant | e3 | NOT SPECIFIED | CSD19505 | 1 | Single | NOT SPECIFIED | 300W | 1 | 31 ns | 16ns | 6 ns | 62 ns | 150A | 20V | SILICON | DRAIN | SWITCHING | 2.6V | 300W Tc | 400A | 80V | N-Channel | 7820pF @ 40V | 3.8m Ω @ 100A, 6V | 3.2V @ 250μA | 150A Ta | 76nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| AOK60N30L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | TO-247-3 | 18 Weeks | No | 1 | TO-247 | 5.33nF | 60A | 30V | 300V | 658W Tc | N-Channel | 5330pF @ 25V | 56mOhm @ 30A, 10V | 4.1V @ 250μA | 60A Tc | 106nC @ 10V | 56 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA36N30P | IXYS | $0.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta36n30p-datasheets-4075.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | 110MOhm | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | R-PSSO-G2 | 30ns | 28 ns | 97 ns | 36A | 30V | SILICON | DRAIN | SWITCHING | 300W Tc | 90A | 1000 mJ | 300V | N-Channel | 2250pF @ 25V | 110m Ω @ 18A, 10V | 5.5V @ 250μA | 36A Tc | 70nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IPW65R190CFDFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb65r190cfdatma1-datasheets-1970.pdf | TO-247-3 | 3 | 18 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 650V | 151W Tc | 17.5A | 57.2A | 0.19Ohm | 484 mJ | N-Channel | 1850pF @ 100V | 190m Ω @ 7.3A, 10V | 4.5V @ 730μA | 17.5A Tc | 68nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP14NK50ZFP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp14nk50zfp-datasheets-4082.pdf | TO-220-3 Full Pack | 10.4mm | 9.3mm | 4.6mm | 3 | 12 Weeks | 4.535924g | No SVHC | 3 | ACTIVE (Last Updated: 6 months ago) | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) - annealed | STP14N | 3 | Single | 35W | 1 | FET General Purpose Power | 24 ns | 16ns | 12 ns | 54 ns | 6A | 30V | SILICON | ISOLATED | SWITCHING | 3.75V | 35W Tc | TO-220AB | 48A | 400 mJ | 500V | N-Channel | 2000pF @ 25V | 380m Ω @ 6A, 10V | 4.5V @ 100μA | 14A Tc | 92nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| STP28N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stb28n60dm2-datasheets-9562.pdf | TO-220-3 | 17 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STP28N | NOT SPECIFIED | 21A | 600V | 4V | 170W Tc | N-Channel | 1500pF @ 100V | 160m Ω @ 10.5A, 10V | 5V @ 250μA | 21A Tc | 34nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF13NM60ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf13nm60nd-datasheets-4100.pdf | TO-220-3 Full Pack | 10.6mm | 16.4mm | 4.6mm | 3 | 16 Weeks | 3 | EAR99 | No | STF13 | Single | 25W | 1 | 46.5 ns | 10ns | 15.4 ns | 9.6 ns | 11A | 25V | SILICON | ISOLATED | SWITCHING | 600V | 25W Tc | TO-220AB | 44A | 650V | N-Channel | 845pF @ 50V | 380m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 24.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FCPF099N65S3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | Through Hole | -55°C~150°C TJ | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fcpf099n65s3-datasheets-4103.pdf | TO-220-3 Full Pack | 12 Weeks | 2.27g | ACTIVE (Last Updated: 2 days ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 650V | 43W Tc | N-Channel | 2310pF @ 400V | 99m Ω @ 15A, 10V | 4.5V @ 3mA | 30A Tc | 57nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R120P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp60r120p7xksa1-datasheets-4114.pdf | TO-220-3 | 3 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 95W Tc | TO-220AB | 78A | 0.12Ohm | 82 mJ | N-Channel | 1544pF @ 400V | 120m Ω @ 8.2A, 10V | 4V @ 410μA | 26A Tc | 36nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW14NK50Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp14nk50zfp-datasheets-4082.pdf | 500V | 14A | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 12 Weeks | 4.535924g | No SVHC | 380mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED | No | e3 | Tin (Sn) | STW14N | 3 | Single | 150W | 1 | FET General Purpose Power | 24 ns | 16ns | 12 ns | 54 ns | 14A | 30V | SILICON | SWITCHING | 3.75V | 150W Tc | TO-247AC | 48A | 400 mJ | 500V | N-Channel | 2000pF @ 25V | 380m Ω @ 6A, 10V | 4.5V @ 100μA | 14A Tc | 92nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IRF9540SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf9540spbf-datasheets-4128.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 200mOhm | 3 | Tin | No | 1 | Single | 150W | 1 | D2PAK | 1.4nF | 16 ns | 73ns | 57 ns | 34 ns | -19A | 20V | 100V | -4V | 3.7W Ta 150W Tc | 200mOhm | P-Channel | 1400pF @ 25V | 200mOhm @ 11A, 10V | 4V @ 250μA | 19A Tc | 61nC @ 10V | 200 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| AOT2500L | Alpha & Omega Semiconductor Inc. | $2.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-220-3 | 18 Weeks | FET General Purpose Power | 152A | Single | 150V | 2.1W Ta 375W Tc | N-Channel | 6460pF @ 75V | 6.5m Ω @ 20A, 10V | 3.5V @ 250μA | 11.5A Ta 152A Tc | 136nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP7530PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfp7530pbf-datasheets-4028.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 12 Weeks | 38.000013g | No SVHC | 3 | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 341W | FET General Purpose Power | 52 ns | 141ns | 104 ns | 172 ns | 195A | 20V | 60V | 3.7V | 341W Tc | N-Channel | 13703pF @ 25V | 2m Ω @ 100A, 10V | 3.7V @ 250μA | 195A Tc | 411nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3745LS-1E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/onsemiconductor-2sk3745ls1e-datasheets-4044.pdf | TO-220-3 Full Pack | 10.16mm | 15.87mm | 4.7mm | Lead Free | 3 | 21 Weeks | 3 | ACTIVE (Last Updated: 3 days ago) | yes | HIGH RELIABILITY | No | e3 | Tin (Sn) | NO | 3 | Single | 2W | 1 | 12 ns | 37ns | 59 ns | 152 ns | 2A | 20V | SILICON | ISOLATED | SWITCHING | 1500V | 2W Ta 35W Tc | TO-220AB | 4A | 1.5kV | N-Channel | 380pF @ 30V | 13 Ω @ 1A, 10V | 2A Ta | 37.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| STP14NM50N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp14nm50n-datasheets-4048.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 320mOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) | SINGLE | STP14N | 3 | Dual | 90W | 1 | FET General Purpose Power | 10.2 ns | 9ns | 32 ns | 42 ns | 12A | 25V | SILICON | SWITCHING | 3V | 90W Tc | TO-220AB | 48A | 500V | N-Channel | 816pF @ 50V | 320m Ω @ 6A, 10V | 4V @ 100μA | 12A Tc | 27nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||
| IRFP7430PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irfp7430pbf-datasheets-4052.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 3 | 12 Weeks | No SVHC | 1.3MOhm | 3 | EAR99 | No | Single | 366W | 1 | FET General Purpose Power | 32 ns | 105ns | 100 ns | 160 ns | 195A | 20V | SILICON | DRAIN | SWITCHING | 2.2V | 366W Tc | TO-247AC | 52 ns | 722 mJ | 40V | N-Channel | 14240pF @ 25V | 1.3m Ω @ 100A, 10V | 3.9V @ 250μA | 195A Tc | 460nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFPC50APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/vishaysiliconix-irfpc50apbf-datasheets-4063.pdf | 600V | 11A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 580mOhm | 3 | No | 1 | Single | 180W | 1 | TO-247-3 | 2.1nF | 15 ns | 40ns | 29 ns | 33 ns | 11A | 30V | 600V | 4V | 180W Tc | 580mOhm | 600V | N-Channel | 2100pF @ 25V | 4 V | 580mOhm @ 6A, 10V | 4V @ 250μA | 11A Tc | 70nC @ 10V | 580 mΩ | 10V | ±30V |
