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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STP265N6F6AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ F6 | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp265n6f6ag-datasheets-3851.pdf | TO-220-3 | 38 Weeks | EAR99 | NOT SPECIFIED | STP265 | NOT SPECIFIED | FET General Purpose Power | 180A | Single | 60V | 300W Tc | N-Channel | 11800pF @ 25V | 2.85m Ω @ 60A, 10V | 4V @ 250μA | 180A Tc | 183nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDA59N25 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fda59n25-datasheets-3854.pdf | TO-3P-3, SC-65-3 | 3 | 7 Weeks | 6.401g | No SVHC | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | FAST SWITCHING | Tin | No | e3 | Single | 392W | 1 | FET General Purpose Power | 70 ns | 480ns | 170 ns | 90 ns | 59A | 30V | SILICON | SWITCHING | 5V | 392W Tc | 0.049Ohm | 250V | N-Channel | 4020pF @ 25V | 5 V | 49m Ω @ 29.5A, 10V | 5V @ 250μA | 59A Tc | 82nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IXFY26N30X3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfy26n30x3-datasheets-3776.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 19 Weeks | 300V | 170W Tc | N-Channel | 1.465nF @ 25V | 66m Ω @ 13A, 10V | 4.5V @ 500μA | 26A Tc | 22nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP50020EL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup50020elge3-datasheets-3779.pdf | TO-220-3 | 3 | 14 Weeks | EAR99 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 120A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 375W Tc | TO-220AB | 300A | 0.0023Ohm | 281 mJ | N-Channel | 11113pF @ 30V | 2.3m Ω @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 126nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP450APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfp450apbf-datasheets-3784.pdf | 500V | 14A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 3 | 12 Weeks | 38.000013g | Unknown | 400mOhm | 3 | No | e3 | MATTE TIN | 3 | 1 | Single | 190W | 1 | 15 ns | 36ns | 29 ns | 35 ns | 14A | 30V | SILICON | SWITCHING | 4V | 190W Tc | 56A | 760 mJ | 500V | N-Channel | 2038pF @ 25V | 4 V | 400m Ω @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 64nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| STF27N60M2-EP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2-EP | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf27n60m2ep-datasheets-3790.pdf | TO-220-3 Full Pack | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STF27 | NOT SPECIFIED | 20A | 600V | 30W Tc | N-Channel | 1320pF @ 100V | 163m Ω @ 10A, 10V | 4.75V @ 250μA | 20A Tc | 33nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP65R190CFDXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb65r190cfdatma1-datasheets-1970.pdf | TO-220-3 | Lead Free | 3 | 18 Weeks | 3 | yes | Tin | e3 | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 151W | 1 | Not Qualified | 12 ns | 8.4ns | 6.4 ns | 53.2 ns | 17.5A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 151W Tc | TO-220AB | 57.2A | 484 mJ | N-Channel | 1850pF @ 100V | 190m Ω @ 7.3A, 10V | 4.5V @ 730μA | 17.5A Tc | 68nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRLB3036PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irlb3036pbf-datasheets-3686.pdf | TO-220-3 | 10.5156mm | 9.02mm | 4.699mm | Lead Free | 3 | 12 Weeks | No SVHC | 2.4MOhm | 3 | EAR99 | NOT SPECIFIED | Single | NOT SPECIFIED | 380W | 1 | FET General Purpose Power | Not Qualified | 66 ns | 220ns | 110 ns | 195A | 16V | SILICON | SWITCHING | 2.5V | 380W Tc | TO-220AB | 270A | 290 mJ | 60V | N-Channel | 11210pF @ 50V | 2.4m Ω @ 165A, 10V | 2.5V @ 250μA | 195A Tc | 140nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
| FDBL0630N150 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdbl0630n150-datasheets-4647.pdf | 8-PowerSFN | Lead Free | 8 Weeks | 850.0521mg | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 245 | Single | NOT SPECIFIED | 169A | 150V | 500W Tj | N-Channel | 5805pF @ 75V | 6.3m Ω @ 80A, 10V | 4V @ 250μA | 169A Tc | 90nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP045N10N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp045n10n3gxksa1-datasheets-3705.pdf | TO-220-3 | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | SINGLE | 3 | 214W | 1 | 27 ns | 59ns | 14 ns | 48 ns | 100A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 214W Tc | TO-220AB | 400A | 0.0045Ohm | N-Channel | 8410pF @ 50V | 4.5m Ω @ 100A, 10V | 3.5V @ 150μA | 100A Tc | 117nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF644SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf644spbf-datasheets-3712.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 8 Weeks | 1.437803g | Unknown | 280MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 30 | 3.1W | 1 | FET General Purpose Power | R-PSSO-G2 | 11 ns | 24ns | 49 ns | 53 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 4V | 3.1W Ta 125W Tc | 56A | 550 mJ | 250V | N-Channel | 1300pF @ 25V | 4 V | 280m Ω @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 68nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IRFB260NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irfb260npbf-datasheets-3721.pdf | 200V | 56A | TO-220-3 | 10.5156mm | 15.24mm | 4.69mm | Lead Free | 3 | 12 Weeks | No SVHC | 40Ohm | 3 | EAR99 | Tin | No | Single | 380W | 1 | FET General Purpose Power | 17 ns | 64ns | 50 ns | 52 ns | 56A | 20V | 200V | SILICON | DRAIN | SWITCHING | 4V | 380W Tc | TO-220AB | 360 ns | 220A | 450 mJ | 200V | N-Channel | 4220pF @ 25V | 4 V | 40m Ω @ 34A, 10V | 4V @ 250μA | 56A Tc | 220nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| STP75NF20 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb75nf20-datasheets-0233.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 5.9MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STP75N | 3 | Single | 190W | 1 | FET General Purpose Power | 53 ns | 33ns | 29 ns | 75 ns | 75A | 20V | SILICON | SWITCHING | 3V | 190W Tc | TO-220AB | 205 mJ | 200V | N-Channel | 3260pF @ 25V | 34m Ω @ 37A, 10V | 4V @ 250μA | 75A Tc | 84nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFB7730PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2001 | /files/infineontechnologies-irfb7730pbf-datasheets-3733.pdf | TO-220-3 | 10.67mm | 19.8mm | 4.83mm | Lead Free | 12 Weeks | 6.000006g | No SVHC | 3 | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 375W | 175°C | 21 ns | 120ns | 115 ns | 180 ns | 195A | 20V | 2.1V | 375W Tc | 75V | N-Channel | 13660pF @ 25V | 2.6m Ω @ 100A, 10V | 3.7V @ 250μA | 195A Tc | 407nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPA65R190CFDXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb65r190cfdatma1-datasheets-1970.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | 3 | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 12 ns | 8.4ns | 6.4 ns | 53.2 ns | 17.5A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 34W Tc | TO-220AB | 57.2A | 0.19Ohm | 484 mJ | N-Channel | 1850pF @ 100V | 190m Ω @ 7.3A, 10V | 4.5V @ 730μA | 17.5A Tc | 68nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXFY36N20X3 | IXYS | $3.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfy36n20x3-datasheets-3750.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 19 Weeks | AVALANCHE RATED | YES | SINGLE | GULL WING | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 176W Tc | TO-252AA | 36A | 50A | 0.045Ohm | 300 mJ | N-Channel | 1425pF @ 25V | 45m Ω @ 18A, 10V | 4.5V @ 500μA | 36A Tc | 21nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPW11N80C3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-spw11n80c3fksa1-datasheets-3758.pdf | TO-247-3 | 3 | 18 Weeks | yes | AVALANCHE RATED | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 800V | 800V | 156W Tc | 11A | 33A | 0.45Ohm | 470 mJ | N-Channel | 1600pF @ 100V | 450m Ω @ 7.1A, 10V | 3.9V @ 680μA | 11A Tc | 85nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP25N40D-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihp25n40dge3-datasheets-3763.pdf | TO-220-3 | 10.51mm | 9.01mm | 4.65mm | 3 | 8 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 278W | 1 | FET General Purpose Powers | 21 ns | 57ns | 37 ns | 40 ns | 25A | 30V | SILICON | SWITCHING | 3V | 278W Tc | TO-220AB | 78A | 556 mJ | 400V | N-Channel | 1707pF @ 100V | 170m Ω @ 13A, 10V | 5V @ 250μA | 25A Tc | 88nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| STP2NK100Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp2nk100z-datasheets-3663.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 8.5Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | STP2N | 3 | Single | 70W | 1 | FET General Purpose Power | 7.2 ns | 41.5 ns | 1.85A | 30V | SILICON | SWITCHING | 1000V | 3.75V | 70W Tc | TO-220AB | 2A | 7.4A | 1kV | N-Channel | 499pF @ 25V | 8.5 Ω @ 900mA, 10V | 4.5V @ 50μA | 1.85A Tc | 16nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| SUP70101EL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sup70101elge3-datasheets-3670.pdf | TO-220-3 | 19.31mm | 14 Weeks | EAR99 | e3 | Tin (Sn) | 260 | 1 | 30 | 375W | 175°C | 20 ns | 110 ns | -120A | 20V | 100V | 375W Tc | 8.1mOhm | -100V | P-Channel | 7000pF @ 50V | 2.5V @ 250μA | 120A Tc | 190nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQA70N10 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqa70n10-datasheets-3678.pdf&product=onsemiconductor-fqa70n10-6828228 | 100V | 70A | TO-3P-3, SC-65-3 | 15.8mm | 18.9mm | 5mm | Lead Free | 3 | 11 Weeks | 6.401g | No SVHC | 23mOhm | 3 | ACTIVE (Last Updated: 7 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 214W | 1 | FET General Purpose Power | 30 ns | 470ns | 160 ns | 130 ns | 70A | 25V | 100V | SILICON | SWITCHING | 4V | 214W Tc | 280A | 100V | N-Channel | 3300pF @ 25V | 4 V | 23m Ω @ 35A, 10V | 4V @ 250μA | 70A Tc | 110nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||
| FDP20N50 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fdp20n50-datasheets-3525.pdf | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 9 Weeks | 1.8g | No SVHC | 230MOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | AVALANCHE RATED | Tin | No | e3 | Single | 250W | 1 | FET General Purpose Power | 95 ns | 375ns | 105 ns | 100 ns | 20A | 30V | SILICON | SWITCHING | 5V | 250W Tc | TO-220AB | 80A | 500V | N-Channel | 3120pF @ 25V | 230m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 59.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| STP150NF55 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp150nf55-datasheets-3535.pdf | TO-220-3 | Lead Free | 3 | 12 Weeks | 6MOhm | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Tin (Sn) | STP150 | 3 | Single | 300W | 1 | FET General Purpose Power | R-PSFM-T3 | 35 ns | 180ns | 80 ns | 140 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-220AB | 480A | 850 mJ | 55V | N-Channel | 4400pF @ 25V | 6m Ω @ 60A, 10V | 4V @ 250μA | 120A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| TK13A60D(STA4,Q,M) | Toshiba Semiconductor and Storage | $2.71 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | 50W | 1 | TO-220SIS | 2.3nF | 50ns | 25 ns | 13A | 30V | 600V | 50W Tc | N-Channel | 2300pF @ 25V | 430mOhm @ 6.5A, 10V | 4V @ 1mA | 13A Ta | 40nC @ 10V | 430 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP10NK60Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp10nk60zfp-datasheets-5354.pdf | 600V | 10A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 750mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP10 | 3 | Single | 115W | 1 | FET General Purpose Power | 20 ns | 20ns | 30 ns | 55 ns | 10A | 30V | SILICON | SWITCHING | 3.75V | 115W Tc | TO-220AB | 600V | N-Channel | 1370pF @ 25V | 750m Ω @ 4.5A, 10V | 4.5V @ 250μA | 10A Tc | 70nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IRFB42N20DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irfb42n20dpbf-datasheets-3553.pdf | 200V | 42A | TO-220-3 | 10.5156mm | 15.24mm | 4.69mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 55Ohm | 3 | EAR99 | No | Single | 300W | 1 | FET General Purpose Power | 18 ns | 69ns | 32 ns | 29 ns | 44A | 30V | 200V | SILICON | DRAIN | SWITCHING | 5.5V | 2.4W Ta 330W Tc | TO-220AB | 330 ns | 42.6A | 200V | N-Channel | 3430pF @ 25V | 5.5 V | 55m Ω @ 26A, 10V | 5.5V @ 250μA | 44A Tc | 140nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXTA3N50D2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/ixys-ixta3n50d2-datasheets-3561.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 24 Weeks | yes | UL RECOGNIZED | not_compliant | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 3A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | AMPLIFIER | 500V | 125W Tc | TO-263AA | N-Channel | 1070pF @ 25V | 1.5 Ω @ 1.5A, 0V | 3A Tc | 40nC @ 5V | Depletion Mode | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLB3034PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irlb3034pbf-datasheets-3571.pdf | TO-220-3 | 10.5156mm | 19.8mm | 4.699mm | Lead Free | 3 | 12 Weeks | No SVHC | 1.7MOhm | 3 | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 375W | 1 | FET General Purpose Power | Not Qualified | 175°C | 65 ns | 827ns | 355 ns | 97 ns | 195A | 20V | SILICON | SWITCHING | 2.5V | 375W Tc | TO-220AB | 255 mJ | 40V | N-Channel | 10315pF @ 25V | 1.7m Ω @ 195A, 10V | 2.5V @ 250μA | 195A Tc | 162nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFB52N15DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-irfb52n15dpbf-datasheets-3597.pdf | 150V | 51A | TO-220-3 | 10.66mm | 16.51mm | 4.82mm | Lead Free | 3 | 12 Weeks | No SVHC | 32Ohm | 3 | EAR99 | No | Single | 320W | 1 | FET General Purpose Power | 16 ns | 47ns | 25 ns | 28 ns | 60A | 30V | 150V | SILICON | DRAIN | SWITCHING | 5V | 3.8W Ta 230W Tc | TO-220AB | 210 ns | 240A | 470 mJ | 150V | N-Channel | 2770pF @ 25V | 5 V | 32m Ω @ 36A, 10V | 5V @ 250μA | 51A Tc | 89nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| FCB070N65S3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/onsemiconductor-fcb070n65s3-datasheets-3319.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.83mm | 2 | 13 Weeks | 1.31247g | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | AVALANCHE RATED, HIGH VOLTAGE | not_compliant | e3 | Tin (Sn) | GULL WING | 245 | 1 | Single | NOT SPECIFIED | 312W | 1 | 150°C | R-PSSO-G2 | 26 ns | 89 ns | 44A | 30V | SILICON | DRAIN | SWITCHING | 4.5V | 312W Tc | 0.07Ohm | 650V | N-Channel | 3090pF @ 400V | 70m Ω @ 22A, 10V | 4.5V @ 4.4mA | 44A Tc | 78nC @ 10V | 10V | ±30V |
