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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Material | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Wire Gauge (Max) | Wire Gauge (Min) | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Plating | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRL620PBF | Vishay Siliconix | $6.45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irl620pbf-datasheets-2361.pdf | 200V | 5.2A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 800mOhm | 3 | Tin | No | 1 | Single | 50W | 1 | TO-220AB | 360pF | 4.2 ns | 31ns | 17 ns | 18 ns | 5.2A | 10V | 200V | 2V | 50W Tc | 800mOhm | 200V | N-Channel | 360pF @ 25V | 2 V | 800mOhm @ 3.1A, 5V | 2V @ 250μA | 5.2A Tc | 16nC @ 5V | 800 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF640SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf640spbf-datasheets-2368.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 8 Weeks | 1.437803g | Unknown | 180mOhm | 3 | EAR99 | AVALANCHE RATED | No | GULL WING | 260 | 4 | 1 | Single | 40 | 130W | 1 | R-PSSO-G2 | 14 ns | 51ns | 36 ns | 45 ns | 18A | 20V | SILICON | DRAIN | SWITCHING | 4V | 3.1W Ta 130W Tc | 72A | 580 mJ | 200V | N-Channel | 1300pF @ 25V | 4 V | 180m Ω @ 11A, 10V | 4V @ 250μA | 18A Tc | 70nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| ZVN4206GTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zvn4206gvta-datasheets-2189.pdf | 60V | 1A | TO-261-4, TO-261AA | 6.7mm | 1.65mm | 3.7mm | Lead Free | 4 | 17 Weeks | 7.994566mg | No SVHC | 1Ohm | no | EAR99 | FAST SWITCHING | Tin | No | e3 | DUAL | GULL WING | 260 | 4 | 1 | Single | 40 | 2W | 1 | FET General Purpose Powers | R-PDSO-G4 | 8 ns | 12ns | 15 ns | 12 ns | 1A | 20V | SILICON | DRAIN | SWITCHING | 2W Ta | 1A | 8A | 60V | N-Channel | 100pF @ 25V | 1 Ω @ 1.5A, 10V | 3V @ 1mA | 1A Ta | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPB60R199CPATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipb60r199cpatma1-datasheets-2354.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 3 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 139W | 1 | Not Qualified | R-PSSO-G2 | 10 ns | 5ns | 50 ns | 16A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 139W Tc | N-Channel | 1520pF @ 100V | 199m Ω @ 9.9A, 10V | 3.5V @ 660μA | 16A Tc | 43nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| STU7LN80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stu7ln80k5-datasheets-2385.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STU7L | NOT SPECIFIED | 5A | 800V | 85W Tc | N-Channel | 270pF @ 100V | 1.15 Ω @ 2.5A, 10V | 5V @ 100μA | 5A Tc | 12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP65NF06 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp65nf06-datasheets-2391.pdf | TO-220-3 | 3 | 12 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | STP65N | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 110W Tc | TO-220AB | 60A | 240A | 0.014Ohm | 390 mJ | N-Channel | 1700pF @ 25V | 14m Ω @ 30A, 10V | 4V @ 250μA | 60A Tc | 75nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS7430TRL7PP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/infineontechnologies-irfs7430trl7pp-datasheets-2401.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 10.67mm | 5.084mm | 9.65mm | Lead Free | 12 Weeks | 1.59999g | No SVHC | 7 | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 375W | FET General Purpose Power | 175°C | 28 ns | 79ns | 93 ns | 161 ns | 240A | 20V | 2.2V | 375W Tc | 522A | 40V | N-Channel | 13975pF @ 25V | 0.75m Ω @ 100A, 10V | 3.9V @ 250μA | 240A Tc | 460nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS86255 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdms86255-datasheets-2425.pdf | 8-PowerTDFN | 5.1mm | 1.1mm | 6.25mm | 5 | 13 Weeks | 56.5mg | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 2.7W | 1 | FET General Purpose Power | 150°C | R-PDSO-N5 | 21 ns | 10ns | 12 ns | 28 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | 2.7W Ta 113W Tc | MO-240AA | 45A | 150V | N-Channel | 4480pF @ 75V | 12.4m Ω @ 10A, 10V | 4V @ 250μA | 10A Ta 45A Tc | 63nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| NDP6020P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -65°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/onsemiconductor-ndp6020p-datasheets-2437.pdf | -20V | -24A | TO-220-3 | 10.67mm | 16.3mm | 4.7mm | Lead Free | 3 | 10 Weeks | 1.8g | No SVHC | 50mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | Single | 60W | 1 | Other Transistors | 15 ns | 27ns | 70 ns | 120 ns | -24A | 8V | SILICON | SWITCHING | 20V | -700mV | 60W Tc | TO-220AB | 70A | -20V | P-Channel | 1590pF @ 10V | 50m Ω @ 12A, 4.5V | 1V @ 250μA | 24A Tc | 35nC @ 5V | 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFR3410TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr3410trpbf-datasheets-1045.pdf | 100V | 31A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | 2 | 12 Weeks | No SVHC | 39MOhm | 3 | EAR99 | Tin | No | e3 | GULL WING | 260 | Single | 30 | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 12 ns | 27ns | 13 ns | 40 ns | 31A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 3W Ta 110W Tc | TO-252AA | 100V | N-Channel | 1690pF @ 25V | 4 V | 39m Ω @ 18A, 10V | 4V @ 250μA | 31A Tc | 56nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFZ44PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfz44pbf-datasheets-2178.pdf | 60V | 50A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 28mOhm | 3 | Tin | No | 1 | Single | 150W | 1 | TO-220AB | 1.9nF | 14 ns | 110ns | 92 ns | 45 ns | 50A | 20V | 60V | 60V | 4V | 150W Tc | 28mOhm | 60V | N-Channel | 1900pF @ 25V | 4 V | 28mOhm @ 31A, 10V | 4V @ 250μA | 50A Tc | 67nC @ 10V | 28 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1404ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irf1404zpbf-datasheets-2186.pdf | 40V | 75A | TO-220-3 | 10.54mm | 8.77mm | 4.69mm | Lead Free | 3 | 12 Weeks | No SVHC | 3.7Ohm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | Single | 220W | 1 | FET General Purpose Power | 18 ns | 110ns | 58 ns | 36 ns | 190A | 20V | 40V | SILICON | DRAIN | SWITCHING | 4V | 200W Tc | TO-220AB | 42 ns | 750A | 480 mJ | 40V | N-Channel | 4340pF @ 25V | 4 V | 3.7m Ω @ 75A, 10V | 4V @ 250μA | 180A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF3710ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irf3710zpbf-datasheets-2195.pdf | 100V | 59A | TO-220-3 | 10.54mm | 19.8mm | 4.69mm | Lead Free | 3 | 12 Weeks | No SVHC | 18MOhm | 3 | 2.54mm | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | MATTE TIN OVER NICKEL | 250 | 1 | Single | 30 | 160W | 1 | FET General Purpose Power | 175°C | 17 ns | 77ns | 56 ns | 41 ns | 59A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 160W Tc | TO-220AB | 50 ns | 75 ns | 240A | 200 mJ | 100V | N-Channel | 2900pF @ 25V | 4 V | 18m Ω @ 35A, 10V | 4V @ 250μA | 59A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRF840APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irf840apbf-datasheets-2205.pdf | 500V | 8A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 11 Weeks | 6.000006g | No SVHC | 850mOhm | 3 | Tin | No | 1 | Single | 125W | 1 | TO-220AB | 1.018nF | 11 ns | 23ns | 19 ns | 26 ns | 8A | 30V | 500V | 4V | 125W Tc | 850mOhm | 500V | N-Channel | 1018pF @ 25V | 4 V | 850mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 38nC @ 10V | 850 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9540PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf9540pbf-datasheets-2217.pdf | -100V | -19A | TO-220-3 | 10.41mm | 19.89mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 200mOhm | 3 | 1 | Single | 150W | 1 | 175°C | TO-220AB | 1.4nF | 16 ns | 73ns | 57 ns | 34 ns | -19A | 20V | 100V | -4V | 150W Tc | 260 ns | 200mOhm | -100V | P-Channel | 1400pF @ 25V | -4 V | 200mOhm @ 11A, 10V | 4V @ 250μA | 19A Tc | 61nC @ 10V | 200 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| STF11N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf11n60dm2-datasheets-2231.pdf | TO-220-3 Full Pack | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | NOT SPECIFIED | STF11 | NOT SPECIFIED | 600V | 25W Tc | N-Channel | 614pF @ 100V | 420m Ω @ 5A, 10V | 5V @ 250μA | 10A Tc | 16.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN004-60B,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/nexperiausainc-psmn00460b118-datasheets-2234.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | 75A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 230W Tc | 400A | 500 mJ | N-Channel | 8300pF @ 25V | 3.6m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 168nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP33N10 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqp33n10-datasheets-2244.pdf&product=onsemiconductor-fqp33n10-6828023 | 100V | 33A | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | Lead Free | 3 | 5 Weeks | 1.8g | No SVHC | 52mOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | Single | 127W | 1 | FET General Purpose Power | 15 ns | 195ns | 110 ns | 80 ns | 33A | 25V | 100V | SILICON | SWITCHING | 4V | 127W Tc | TO-220AB | 100V | N-Channel | 1500pF @ 25V | 4 V | 52m Ω @ 16.5A, 10V | 4V @ 250μA | 33A Tc | 51nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||
| CSD19533KCS | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-220-3 | 10.16mm | 4.7mm | 8.7mm | Lead Free | 3 | 6 Weeks | 6.000006g | No SVHC | 3 | ACTIVE (Last Updated: 6 days ago) | yes | 4.58mm | EAR99 | AVALANCHE RATED | Tin | not_compliant | e3 | NOT SPECIFIED | CSD19533 | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | 7 ns | 5ns | 2 ns | 12 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 2.8V | 188W Tc | 207A | 100V | N-Channel | 2670pF @ 50V | 10.5m Ω @ 55A, 10V | 3.4V @ 250μA | 100A Ta | 35nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| STU13N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stu13n65m2-datasheets-2291.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.2mm | 2.4mm | 26 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STU13N | Single | NOT SPECIFIED | FET General Purpose Power | 11 ns | 38 ns | 10A | 25V | 650V | 110W Tc | N-Channel | 590pF @ 100V | 430m Ω @ 5A, 10V | 4V @ 250μA | 10A Tc | 17nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQM120N04-1M7L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm120n041m7lge3-datasheets-2108.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | 1.437803g | No | 1 | Single | 375W | 1 | TO-263 | 14.606nF | 15 ns | 10ns | 12 ns | 74 ns | 120A | 20V | 40V | 375W Tc | 1.5mOhm | 40V | N-Channel | 14606pF @ 20V | 1.7mOhm @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 285nC @ 10V | 1.7 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBE30PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbe30pbf-datasheets-2300.pdf | 800V | 4.1A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 3Ohm | 3 | Tin | No | 48A | 800V | 1 | Single | 125W | 1 | TO-220AB | 1.3nF | 12 ns | 33ns | 30 ns | 82 ns | 4.1A | 20V | 800V | 4V | 125W Tc | 720 ns | 3Ohm | 800V | N-Channel | 1300pF @ 25V | 4 V | 3Ohm @ 2.5A, 10V | 4V @ 250μA | 4.1A Tc | 78nC @ 10V | 3 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| STP30NF10 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp30nf10-datasheets-2308.pdf | 100V | 35A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 45MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED | Tin | No | e3 | STP30N | 3 | Single | 115W | 1 | FET General Purpose Power | 15 ns | 40ns | 10 ns | 45 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 3V | 115W Tc | TO-220AB | 275 mJ | 100V | N-Channel | 1180pF @ 25V | 45m Ω @ 15A, 10V | 4V @ 250μA | 35A Tc | 55nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| STP20NF20 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf20nf20-datasheets-2709.pdf | 200V | 18A | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 125mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | STP20N | 3 | Single | 90W | 1 | FET General Purpose Power | 15 ns | 30ns | 10 ns | 40 ns | 18A | 20V | SILICON | ISOLATED | SWITCHING | 3V | 110W Tc | TO-220AB | 72A | 200V | N-Channel | 940pF @ 25V | 125m Ω @ 10A, 10V | 4V @ 250μA | 18A Tc | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| STD7NM80 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std7nm80-datasheets-2102.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | 16 Weeks | No SVHC | 1.05Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STD7 | 3 | Single | 30 | 90W | 1 | FET General Purpose Power | R-PSSO-G2 | 20 ns | 8ns | 10 ns | 35 ns | 6.5A | 30V | 800V | SILICON | ISOLATED | SWITCHING | 4V | 90W Tc | 26A | 240 mJ | 800V | N-Channel | 620pF @ 25V | 4 V | 1.05 Ω @ 3.25A, 10V | 5V @ 250μA | 6.5A Tc | 18nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| PSMN1R5-30BLEJ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Crimp | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn1r530blej-datasheets-1962.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | Brass | 2 | 12 Weeks | 3.949996g | 3 | No | YES | GULL WING | 3 | 1 | Single | 1 | R-PSSO-G2 | 100.6 ns | 156.1ns | 99.2 ns | 191.8 ns | 120A | 20V | 30V | DRAIN | SWITCHING | 24 AWG | 20 AWG | 401W Tc | Gold, Tin | 30V | N-Channel | 14934pF @ 15V | 1.5m Ω @ 25A, 10V | 2.15V @ 1mA | 120A Tc | 228nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP5N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stp5n80k5-datasheets-2039.pdf | TO-220-3 | Lead Free | 17 Weeks | ACTIVE (Last Updated: 7 months ago) | STP5N | 800V | 60W Tc | N-Channel | 177pF @ 100V | 1.75 Ω @ 2A, 10V | 5V @ 100μA | 4A Tc | 5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC007N08LCDC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fdmc007n08lcdc-datasheets-1658.pdf | 8-PowerWDFN | 20 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 80V | 57W Tc | N-Channel | 3070pF @ 40V | 6.8m Ω @ 22A, 10V | 2.5V @ 130μA | 64A Tc | 44nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STU6N62K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stu6n62k3-datasheets-2052.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.9mm | 2.4mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | ULTRA LOW-ON RESISTANCE | No | e3 | Matte Tin (Sn) - annealed | 260 | STU6N | 3 | Single | 90W | 1 | FET General Purpose Power | 22 ns | 12.5ns | 19 ns | 49 ns | 5.5A | 30V | SILICON | SWITCHING | 3.75V | 90W Tc | 22A | 620V | N-Channel | 875pF @ 50V | 1.2 Ω @ 2.8A, 10V | 4.5V @ 50μA | 5.5A Tc | 30nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| AOT240L | Alpha & Omega Semiconductor Inc. | $0.45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-220-3 | 16 Weeks | 176W | 1 | FET General Purpose Powers | 105A | 20V | Single | 40V | 1.9W Ta 176W Tc | N-Channel | 4300pF @ 20V | 2.9m Ω @ 20A, 10V | 2.2V @ 250μA | 20A Ta 105A Tc | 72nC @ 10V | 4.5V 10V | ±20V |
