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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Material | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Wire Gauge (Max) | Wire Gauge (Min) | Row Spacing | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Plating | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| BUK9Y8R7-60E,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Crimp | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk9y8r760e115-datasheets-1060.pdf | SC-100, SOT-669 | Brass, Bronze | 4 | 12 Weeks | 4 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | GULL WING | 4 | Single | 147W | 1 | 17 ns | 30ns | 26 ns | 42 ns | 86A | 10V | 60V | DRAIN | SWITCHING | 24 AWG | 20 AWG | 147W Tc | MO-235 | Gold, Tin | 0.0087Ohm | 76.5 mJ | N-Channel | 4570pF @ 25V | 7.5m Ω @ 20A, 10V | 2.1V @ 1mA | 86A Tc | 31nC @ 5V | 5V 10V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR7546TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irfr7546trpbf-datasheets-1026.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 12 Weeks | 3.949996g | No SVHC | 3 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 8.1 ns | 28ns | 20 ns | 36 ns | 56A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 3.7V | 99W Tc | TO-252AA | 280A | 0.0079Ohm | N-Channel | 3020pF @ 25V | 7.9m Ω @ 43A, 10V | 3.7V @ 100μA | 56A Tc | 87nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| CSD18514Q5A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 6mm | 5 | 16 Weeks | 8 | ACTIVE (Last Updated: 4 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | YES | DUAL | NO LEAD | 260 | CSD18514 | Single | NOT SPECIFIED | 1 | SILICON | DRAIN | SWITCHING | 40V | 40V | 74W Tc | 237A | 0.0079Ohm | 55 mJ | N-Channel | 7.9m Ω @ 15A, 10V | 2.4V @ 250μA | 89A Tc | 40nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR4105TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount, Through Hole | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irfr4105trpbf-datasheets-1009.pdf | 55V | 25A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 2.38mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 45mOhm | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 48W | 1 | FET General Purpose Power | R-PSSO-G2 | 7 ns | 49ns | 40 ns | 31 ns | 27A | 20V | 55V | SILICON | DRAIN | SWITCHING | 4V | 68W Tc | TO-252AA | 86 ns | 20A | 65 mJ | 55V | N-Channel | 700pF @ 25V | 4 V | 45m Ω @ 16A, 10V | 4V @ 250μA | 27A Tc | 34nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFR4105ZTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irfr4105ztrpbf-datasheets-1035.pdf | 55V | 30A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 1.778mm | 6.22mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 24.5MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 48W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 40ns | 24 ns | 26 ns | 30A | 20V | 55V | SILICON | DRAIN | SWITCHING | 4V | 48W Tc | TO-252AA | 29 ns | 29 mJ | 55V | N-Channel | 740pF @ 25V | 4 V | 24.5m Ω @ 18A, 10V | 4V @ 250μA | 30A Tc | 27nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| ZVP4424ZTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-zvp4424zta-datasheets-0755.pdf | -240V | -200mA | TO-243AA | 4.6mm | 1.6mm | 2.6mm | Lead Free | 4 | 17 Weeks | 130.492855mg | No SVHC | 11Ohm | 3 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 4 | 1 | Single | 2.6W | 1 | Other Transistors | R-PDSO-G4 | 8 ns | 8ns | 20 ns | 26 ns | 200mA | 40V | SILICON | DRAIN | SWITCHING | 240V | 1.5W Ta | 0.2A | 1A | -240V | P-Channel | 200pF @ 25V | 9 Ω @ 200mA, 10V | 2V @ 1mA | 200mA Ta | 3.5V 10V | ±40V | ||||||||||||||||||||||||||||||||||||||||||||
| AO4402 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/alphaomegasemiconductor-ao4402-datasheets-3584.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 16 Weeks | 8 | 3.1W | 1 | 20A | 12V | 20V | 3.1W Ta | N-Channel | 4630pF @ 10V | 5.5m Ω @ 20A, 4.5V | 1.6V @ 250μA | 20A Ta | 43nC @ 10V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMA8878 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/onsemiconductor-fdma8878-datasheets-0911.pdf | 6-VDFN Exposed Pad | 2mm | 725μm | 2mm | Lead Free | 6 | 16 Weeks | 30mg | No SVHC | 6 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | Single | 2.4W | 1 | FET General Purpose Power | 6 ns | 2ns | 2 ns | 14 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | 1.8V | 2.4W Ta | 9A | 35 pF | 30V | N-Channel | 720pF @ 15V | 1.8 V | 16m Ω @ 9A, 10V | 3V @ 250μA | 9A Ta 10A Tc | 12nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SI4156DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4156dyt1ge3-datasheets-0949.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 6mOhm | 8 | yes | EAR99 | Tin | unknown | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.5W | 1 | Not Qualified | 25 ns | 20ns | 15 ns | 25 ns | 24A | 20V | SILICON | SWITCHING | 2.2V | 2.5W Ta 6W Tc | 30V | N-Channel | 1700pF @ 15V | 6m Ω @ 15.7A, 10V | 2.2V @ 250μA | 24A Tc | 42nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3910TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irfr3910trpbf-datasheets-0641.pdf | 100V | 16A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 115mOhm | 3 | EAR99 | AVALANCHE RATED | Tin | No | e3 | GULL WING | 260 | Single | 30 | 52W | 1 | FET General Purpose Power | R-PSSO-G2 | 6.4 ns | 27ns | 25 ns | 37 ns | 16A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 79W Tc | TO-252AA | 190 ns | 60A | 100V | N-Channel | 640pF @ 25V | 4 V | 115m Ω @ 10A, 10V | 4V @ 250μA | 16A Tc | 44nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFR3910TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irfr3910trpbf-datasheets-0641.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 79W Tc | TO-252AA | 16A | 60A | 0.115Ohm | 150 mJ | N-Channel | 640pF @ 25V | 115m Ω @ 10A, 10V | 4V @ 250μA | 16A Tc | 44nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMP6A17KTC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/diodesincorporated-zxmp6a17ktc-datasheets-9445.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 17 Weeks | 3.949996g | No SVHC | 125mOhm | 3 | no | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 40 | 9.25W | 1 | Other Transistors | R-PSSO-G2 | 2.6 ns | 3.4ns | 11.3 ns | 26.2 ns | 6.6A | 20V | SILICON | DRAIN | SWITCHING | 60V | 2.11W Ta | TO-252AA | 4.4A | -60V | P-Channel | 637pF @ 30V | 125m Ω @ 2.3A, 10V | 1V @ 250μA | 4.4A Ta | 17.7nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| NTMFS4C03NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-ntmfs4c03nt1g-datasheets-0611.pdf | 8-PowerTDFN | Lead Free | 5 | 16 Weeks | 8 | ACTIVE (Last Updated: 6 days ago) | yes | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | R-PDSO-F5 | 136A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3.1W Ta 64W Tc | 900A | 549 mJ | N-Channel | 3071pF @ 15V | 2.1m Ω @ 30A, 10V | 2.2V @ 250μA | 30A Ta 136A Tc | 45.2nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD8451 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-fdd8451-datasheets-0764.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 260.37mg | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 30W | 1 | FET General Purpose Power | R-PSSO-G2 | 7 ns | 3ns | 2 ns | 19 ns | 28A | 20V | SILICON | DRAIN | SWITCHING | 2.1V | 30W Tc | 9A | 78A | 0.024Ohm | 20 mJ | 40V | N-Channel | 990pF @ 20V | 2.1 V | 24m Ω @ 9A, 10V | 3V @ 250μA | 9A Ta 28A Tc | 20nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| DMT8012LFG-7 | Diodes Incorporated | $0.78 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmt8012lfg7-datasheets-0808.pdf | 8-PowerVDFN | 1.949nF | 23 Weeks | 72.007789mg | 8 | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 4.9 ns | 3.8ns | 3.5 ns | 16.5 ns | 35A | 20V | 2.2W Ta 30W Tc | 80V | N-Channel | 1949pF @ 40V | 16m Ω @ 12A, 10V | 3V @ 250μA | 9.5A Ta 35A Tc | 34nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC50N04S55R8ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipc50n04s55r8atma1-datasheets-9615.pdf | 8-PowerTDFN | 3 | 16 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 42W Tc | 50A | 200A | 0.0072Ohm | 30 mJ | N-Channel | 1090pF @ 25V | 5.8m Ω @ 25A, 10V | 3.4V @ 13μA | 50A Tc | 18nC @ 10V | 7V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVD5C668NLT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/onsemiconductor-nvd5c668nlt4g-datasheets-0821.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | ACTIVE (Last Updated: 2 days ago) | yes | not_compliant | 60V | 44W Tc | N-Channel | 1300pF @ 25V | 8.9m Ω @ 25A, 10V | 2.1V @ 250μA | 49A Tc | 8.7nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TN5325K1-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/microchiptechnology-tn5325k1g-datasheets-0773.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 950μm | 1.3mm | Lead Free | 3 | 18 Weeks | 1.437803g | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | Single | 40 | 360mW | 1 | FET General Purpose Power | Not Qualified | 20 ns | 15ns | 15 ns | 25 ns | 150mA | 20V | SILICON | SWITCHING | 360mW Ta | 7Ohm | 250V | N-Channel | 110pF @ 25V | 7 Ω @ 1A, 10V | 2V @ 1mA | 150mA Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR310TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/vishaysiliconix-irfr310trpbf-datasheets-0789.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 3.6Ohm | 3 | No | 1 | Single | 2.5W | 1 | D-Pak | 170pF | 7.9 ns | 9.9ns | 11 ns | 21 ns | 1.7A | 20V | 400V | 4V | 2.5W Ta 25W Tc | 3.6Ohm | 400V | N-Channel | 170pF @ 25V | 3.6Ohm @ 1A, 10V | 4V @ 250μA | 1.7A Tc | 12nC @ 10V | 3.6 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMA910PZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdma910pz-datasheets-0793.pdf | 6-VDFN Exposed Pad | 2mm | 750μm | 2mm | Lead Free | 6 | 16 Weeks | 30mg | No SVHC | 6 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | Single | 30 | 2.4W | 1 | Other Transistors | 9.4 ns | 19ns | 103 ns | 135 ns | 9.4A | 8V | SILICON | DRAIN | SWITCHING | 20V | -500mV | 2.4W Ta | 0.02Ohm | 580 pF | -20V | P-Channel | 2805pF @ 10V | 20m Ω @ 9.4A, 4.5V | 1.5V @ 250μA | 9.4A Ta | 29nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||
| SQSA80ENW-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqsa80enwt1ge3-datasheets-0819.pdf | PowerPAK® 1212-8 | 1.17mm | 5 | 14 Weeks | unknown | YES | DUAL | FLAT | NOT SPECIFIED | 1 | NOT SPECIFIED | 62.5W | 1 | 175°C | S-PDSO-F5 | 9 ns | 19 ns | 18A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 62.5W Tc | 72A | 0.027Ohm | 24.2 mJ | 80V | N-Channel | 1358pF @ 40V | 21m Ω @ 10A, 10V | 2.5V @ 250μA | 18A Tc | 21nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS86252 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/onsemiconductor-fds86252-datasheets-0571.pdf | 8-SOIC (0.154, 3.90mm Width) | 4mm | 1.5mm | 5mm | 8 | 9 Weeks | 130mg | No SVHC | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | Single | 5W | 1 | FET General Purpose Power | 9.2 ns | 1.6ns | 2.9 ns | 14 ns | 4.5A | 20V | SILICON | SWITCHING | 3.4V | 2.5W Ta 5W Tc | 0.055Ohm | 5 pF | 150V | N-Channel | 955pF @ 75V | 3.4 V | 55m Ω @ 4.5A, 10V | 4V @ 250μA | 4.5A Ta | 15nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4935NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-ntmfs4935nt1g-datasheets-0653.pdf | 8-PowerTDFN, 5 Leads | 5.1mm | 1.1mm | 6.1mm | Lead Free | 5 | 16 Weeks | No SVHC | 5 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | YES | DUAL | FLAT | 5 | Single | 2.63W | 1 | FET General Purpose Power | 16.3 ns | 20ns | 6.6 ns | 27.5 ns | 93A | 20V | SILICON | DRAIN | SWITCHING | 1.63V | 930mW Ta 48W Tc | 0.0042Ohm | 30V | N-Channel | 4850pF @ 15V | 1.63 V | 3.2m Ω @ 30A, 10V | 2.2V @ 250μA | 13A Ta 93A Tc | 49.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| PSMN2R2-25YLC,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn2r225ylc115-datasheets-0428.pdf | SC-100, SOT-669 | Lead Free | 4 | 12 Weeks | 3.15MOhm | 4 | HIGH RELIABILITY | No | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 4 | 106W | 1 | 24 ns | 34ns | 16 ns | 36 ns | 100A | 20V | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 106W Tc | MO-235 | 636A | 60 mJ | 25V | N-Channel | 2542pF @ 12V | 2.4m Ω @ 25A, 10V | 1.95V @ 1mA | 100A Tc | 39nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7413TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irf7413trpbf-datasheets-0381.pdf | 30V | 13A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.75mm | 3.9878mm | Contains Lead, Lead Free | 8 | 12 Weeks | No SVHC | 11mOhm | 8 | EAR99 | ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | Single | 30 | 2.5W | 1 | 150°C | 8.6 ns | 50ns | 46 ns | 52 ns | 13A | 20V | 30V | SILICON | SWITCHING | 6.3 mm | 3V | 2.5W Ta | 110 ns | 260 mJ | 30V | N-Channel | 1800pF @ 25V | 3 V | 11m Ω @ 7.3A, 10V | 3V @ 250μA | 13A Ta | 79nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| NVTFS5116PLTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/onsemiconductor-nvtfs5116pltwg-datasheets-7955.pdf | 8-PowerWDFN | Lead Free | 5 | 18 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | YES | DUAL | FLAT | 8 | Single | 21W | 1 | Other Transistors | S-PDSO-F5 | 14 ns | 68ns | 36 ns | 24 ns | 6A | 20V | SILICON | DRAIN | 60V | -3V | 3.2W Ta 21W Tc | 6A | 0.072Ohm | 45 mJ | -60V | P-Channel | 1258pF @ 25V | 52m Ω @ 7A, 10V | 3V @ 250μA | 6A Ta | 25nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRL60HS118 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irl60hs118-datasheets-0438.pdf | 6-VDFN Exposed Pad | 1mm | 6 | 18 Weeks | yes | EAR99 | PG-TSDSON-6 | YES | DUAL | NO LEAD | NOT SPECIFIED | 1 | NOT SPECIFIED | 2.5W | 1 | 175°C | S-PDSO-N6 | 8.4 ns | 9 ns | 18.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.7V | 11.5W Tc | 56A | 22 mJ | 60V | N-Channel | 660pF @ 25V | 17m Ω @ 11A, 10V | 2.3V @ 10μA | 18.5A Tc | 8nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQS401EN-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqs401ent1ge3-datasheets-0506.pdf | PowerPAK® 1212-8 | 12 Weeks | PowerPAK® 1212-8 | 40V | 62.5W Tc | 20mOhm | P-Channel | 1875pF @ 20V | 29mOhm @ 12A, 10V | 2.5V @ 250μA | 16A Tc | 21.2nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMP6A16KTC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/diodesincorporated-zxmp6a16ktc-datasheets-0444.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 17 Weeks | 3.949996g | No SVHC | 85mOhm | 3 | no | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 40 | 9.76W | 1 | Other Transistors | R-PSSO-G2 | 3.5 ns | 4.1ns | 10 ns | 35 ns | 8.2A | 20V | SILICON | DRAIN | SWITCHING | 60V | -1V | 2.11W Ta | 5.4A | 27.2A | -60V | P-Channel | 1021pF @ 30V | 85m Ω @ 2.9A, 10V | 1V @ 250μA | 5.4A Ta | 24.2nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| BUK9Y09-40B,115 | Nexperia USA Inc. | $1.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-buk9y0940b115-datasheets-0472.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | SINGLE | GULL WING | 4 | 105.3W | 1 | 29 ns | 92ns | 83 ns | 97 ns | 75A | 15V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 105.3W Tc | MO-235 | 300A | 0.01Ohm | 40V | N-Channel | 2866pF @ 25V | 8m Ω @ 25A, 10V | 2.15V @ 1mA | 75A Tc | 30nC @ 5V | 5V 10V | ±15V |
