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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRLI530NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irli530npbf-datasheets-1405.pdf | 100V | 11A | TO-220-3 Full Pack | 10.6172mm | 16.12mm | 4.826mm | Contains Lead, Lead Free | 3 | 14 Weeks | No SVHC | 120mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | Tin | No | Single | 33W | 1 | FET General Purpose Power | 2kV | 7.2 ns | 53ns | 26 ns | 30 ns | 12A | 16V | 100V | SILICON | ISOLATED | SWITCHING | 2V | 41W Tc | TO-220AB | 210 ns | 60A | 100V | N-Channel | 800pF @ 25V | 2 V | 100m Ω @ 9A, 10V | 2V @ 250μA | 12A Tc | 34nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||
| SI7113DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7113dnt1ge3-datasheets-8522.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | 134MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 8 | 1 | Single | 3.7W | 1 | S-PDSO-F5 | 30 ns | 110ns | 40 ns | 51 ns | -13.2A | 20V | SILICON | DRAIN | SWITCHING | 100V | 3.7W Ta 52W Tc | 20A | -100V | P-Channel | 1480pF @ 50V | 134m Ω @ 4A, 10V | 3V @ 250μA | 13.2A Tc | 55nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FDMS5352 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-fdms5352-datasheets-1422.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Lead Free | 5 | 10 Weeks | 68.1mg | No SVHC | 6.7MOhm | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | FLAT | Single | 2.5W | 1 | FET General Purpose Power | R-PDSO-F5 | 19 ns | 11ns | 7 ns | 58 ns | 13.6A | 20V | SILICON | DRAIN | SWITCHING | 1.8V | 2.5W Ta 104W Tc | 49A | 600 mJ | 60V | N-Channel | 6940pF @ 30V | 6.7m Ω @ 13.6A, 10V | 3V @ 250μA | 13.6A Ta 49A Tc | 131nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| STD5NK40Z-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std5nk40z1-datasheets-1442.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.2mm | 2.4mm | Lead Free | 3 | 12 Weeks | No SVHC | 1.8Ohm | 3 | ACTIVE (Last Updated: 7 months ago) | No | e3 | Tin (Sn) | 260 | STD5N | 3 | Single | 30 | 45W | 1 | FET General Purpose Power | 9.2 ns | 6ns | 11 ns | 22.5 ns | 3A | 30V | SILICON | SWITCHING | 3.75V | 45W Tc | 3A | 400V | N-Channel | 305pF @ 25V | 1.8 Ω @ 1.5A, 10V | 4.5V @ 50μA | 3A Tc | 17nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IRLZ24PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irlz24pbf-datasheets-1461.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 8 Weeks | 6.000006g | Unknown | 100mOhm | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | 3 | 1 | Single | 60W | 1 | FET General Purpose Power | 11 ns | 110ns | 41 ns | 23 ns | 17A | 10V | SILICON | DRAIN | SWITCHING | 60V | 60V | 2V | 60W Tc | TO-220AB | 68A | N-Channel | 870pF @ 25V | 2 V | 100m Ω @ 10A, 5V | 2V @ 250μA | 17A Tc | 18nC @ 5V | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||
| SPP18P06PHXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-spp18p06phxksa1-datasheets-1469.pdf | TO-220-3 | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 81.1W | 1 | Other Transistors | 12 ns | 5.8ns | 11 ns | 25 ns | 18.7A | 20V | -60V | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 81.1W Ta | TO-220AB | 74.8A | P-Channel | 860pF @ 25V | 130m Ω @ 13.2A, 10V | 4V @ 1mA | 18.7A Ta | 28nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF7241TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7241trpbf-datasheets-0336.pdf | -40V | -6.2A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Contains Lead, Lead Free | 8 | 12 Weeks | No SVHC | 41MOhm | 8 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | Single | 30 | 2.5W | 1 | Other Transistors | 24 ns | 280ns | 100 ns | 210 ns | -6.2A | 20V | -40V | SILICON | SWITCHING | 40V | -3V | 2.5W Ta | 48 ns | -40V | P-Channel | 3220pF @ 25V | -3 V | 41m Ω @ 6.2A, 10V | 3V @ 250μA | 6.2A Ta | 80nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| CSD17552Q3A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerVDFN | 3.3mm | 900μm | 3.3mm | Lead Free | 5 | 6 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 4 days ago) | yes | 800μm | EAR99 | AVALANCHE RATED | Tin | e3 | DUAL | FLAT | 260 | CSD17552 | 8 | Single | NOT SPECIFIED | 2.6W | 1 | FET General Purpose Power | 7.2 ns | 7.4ns | 3.4 ns | 11 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 1.5V | 2.6W Ta | 36 pF | 45 mJ | 30V | N-Channel | 2050pF @ 15V | 6m Ω @ 11A, 10V | 1.9V @ 250μA | 15A Ta 60A Tc | 12nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SIR470DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sir470dpt1ge3-datasheets-1344.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 2.3MOhm | 8 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 8 | 1 | Single | 6.25W | 1 | R-PDSO-F5 | 40 ns | 31ns | 39 ns | 85 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 1V | 6.25W Ta 104W Tc | 40V | N-Channel | 5660pF @ 20V | 225ns | 2.5 V | 2.3m Ω @ 20A, 10V | 2.5V @ 250μA | 60A Tc | 155nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| FQB55N10TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqb55n10tm-datasheets-1364.pdf | 100V | 55A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 6.35mm | 6.35mm | 9.65mm | Lead Free | 2 | 11 Weeks | 1.31247g | No SVHC | 26mOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | GULL WING | Single | 3.75W | 1 | FET General Purpose Power | R-PSSO-G2 | 25 ns | 250ns | 140 ns | 110 ns | 55mA | 25V | SILICON | DRAIN | SWITCHING | 4V | 3.75W Ta 155W Tc | 220A | 100V | N-Channel | 2730pF @ 25V | 26m Ω @ 27.5A, 10V | 4V @ 250μA | 55A Tc | 98nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||
| HAT2165H-EL-E | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/renesaselectronicsamerica-hat2165hele-datasheets-1380.pdf | SC-100, SOT-669 | Lead Free | 4 | 16 Weeks | 5 | yes | EAR99 | Gold | No | e4 | SINGLE | GULL WING | 260 | 5 | 20 | 30W | 1 | FET General Purpose Power | R-PSSO-G4 | 13 ns | 65ns | 9.5 ns | 60 ns | 55A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 30W Tc | 220A | N-Channel | 5180pF @ 10V | 3.3m Ω @ 27.5A, 10V | 2.5V @ 1mA | 55A Ta | 33nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SI7129DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7129dnt1ge3-datasheets-1220.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | 11.4mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | 40 | 3.8W | 1 | Other Transistors | S-XDSO-C5 | 50 ns | 43ns | 14 ns | 36 ns | 14.4A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3.8W Ta 52.1W Tc | 35A | 60A | P-Channel | 3345pF @ 15V | 11.4m Ω @ 14.4A, 10V | 2.8V @ 250μA | 35A Tc | 71nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPB600N25N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp600n25n3gxksa1-datasheets-0448.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 13 Weeks | 3 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 136W | 1 | Not Qualified | R-PSSO-G2 | 10 ns | 8 ns | 22 ns | 25A | 20V | 250V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 136W Tc | 0.06Ohm | N-Channel | 2350pF @ 100V | 60m Ω @ 25A, 10V | 4V @ 90μA | 25A Tc | 29nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FDS86106 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/onsemiconductor-fds86106-datasheets-1234.pdf | 8-SOIC (0.154, 3.90mm Width) | 4mm | 1.5mm | 5mm | Lead Free | 8 | 9 Weeks | 130mg | No SVHC | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 5W | 1 | FET General Purpose Power | Not Qualified | 5 ns | 10ns | 10 ns | 8 ns | 3.4A | 20V | SILICON | SWITCHING | 2.9V | 5W Ta | 3 pF | 100V | N-Channel | 208pF @ 50V | 2.9 V | 105m Ω @ 3.4A, 10V | 4V @ 250μA | 3.4A Ta | 4nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SQJQ480E-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqjq480et1ge3-datasheets-1251.pdf | 8-PowerTDFN | 4 | 14 Weeks | unknown | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | 260 | NOT SPECIFIED | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 80V | 80V | 136W Tc | 150A | 210A | 0.003Ohm | 140 mJ | N-Channel | 8625pF @ 25V | 3m Ω @ 20A, 10V | 3.5V @ 250μA | 150A Tc | 144nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD19531Q5AT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd19502q5b-datasheets-1484.pdf | 8-PowerTDFN | 4.9mm | 1.1mm | 6mm | Contains Lead | 5 | 8 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 5 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | not_compliant | e3 | DUAL | NO LEAD | 260 | CSD19531 | 1 | Single | NOT SPECIFIED | 1 | 6 ns | 5.8ns | 5.2 ns | 18.4 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 2.7V | 3.3W Ta 125W Tc | 337A | 100V | N-Channel | 3870pF @ 50V | 6.4m Ω @ 16A, 10V | 3.3V @ 250μA | 100A Ta | 48nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF510SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | /files/vishaysiliconix-irf510spbf-datasheets-1259.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 540mOhm | 3 | No | 1 | Single | 3.7W | 1 | D2PAK | 180pF | 6.9 ns | 16ns | 9.4 ns | 15 ns | 5.6A | 20V | 100V | 4V | 3.7W Ta 43W Tc | 540mOhm | 100V | N-Channel | 180pF @ 25V | 4 V | 540mOhm @ 3.4A, 10V | 4V @ 250μA | 5.6A Tc | 8.3nC @ 10V | 540 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| VN2222LL-G | Microchip Technology | $0.45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/microchiptechnology-vn2222llg-datasheets-1264.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | Lead Free | 3 | 6 Weeks | 453.59237mg | 3 | EAR99 | LOW THRESHOLD | Tin | No | e3 | BOTTOM | 1 | Single | 1W | 1 | FET General Purpose Power | 10 ns | 10 ns | 230mA | 30V | SILICON | SWITCHING | 400mW Ta 1W Tc | 0.099A | 8 pF | 60V | N-Channel | 60pF @ 25V | 7.5 Ω @ 500mA, 10V | 2.5V @ 1mA | 230mA Tj | 5V 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| ZVNL110GTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zvnl110gta-datasheets-1158.pdf | 100V | 600mA | TO-261-4, TO-261AA | 6.7mm | 1.65mm | 3.7mm | Lead Free | 4 | 17 Weeks | 7.994566mg | No SVHC | 4.5Ohm | no | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 4 | 1 | Single | 40 | 2W | 1 | R-PDSO-G4 | 7 ns | 12ns | 13 ns | 15 ns | 600mA | 20V | SILICON | DRAIN | SWITCHING | 1.1W Ta | 0.6A | 6A | 100V | N-Channel | 75pF @ 25V | 3 Ω @ 500mA, 10V | 1.5V @ 1mA | 600mA Ta | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRF9630PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/vishaysiliconix-irf9630pbf-datasheets-1286.pdf | -200V | -6.5A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 800MOhm | 3 | 1 | Single | 74W | 1 | TO-220AB | 700pF | 12 ns | 27ns | 24 ns | 28 ns | -6.5A | 20V | 200V | 4V | 74W Tc | 300 ns | 800mOhm | -200V | P-Channel | 700pF @ 25V | -4 V | 800mOhm @ 3.9A, 10V | 4V @ 250μA | 6.5A Tc | 29nC @ 10V | 800 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFD024PBF | Vishay Siliconix | $1.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd024pbf-datasheets-1303.pdf | 60V | 2.5A | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | Lead Free | 8 Weeks | Unknown | 100mOhm | 4 | No | Single | 1.3W | 1 | 4-DIP, Hexdip, HVMDIP | 640pF | 13 ns | 58ns | 58 ns | 25 ns | 2.5A | 20V | 60V | 4V | 1.3W Ta | 180 ns | 100mOhm | 60V | N-Channel | 640pF @ 25V | 100mOhm @ 1.5A, 10V | 4V @ 250μA | 2.5A Ta | 25nC @ 10V | 100 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFZ24PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfz24pbf-datasheets-1307.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 8 Weeks | 6.000006g | Unknown | 100mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 60W | 1 | FET General Purpose Power | 13 ns | 58ns | 42 ns | 25 ns | 17A | 20V | SILICON | SWITCHING | 4V | 60W Tc | TO-220AB | 68A | 60V | N-Channel | 640pF @ 25V | 100m Ω @ 10A, 10V | 4V @ 250μA | 17A Tc | 25nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| CSD17310Q5A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 6mm | Contains Lead | 5 | 16 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 5 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | No | e3 | DUAL | 260 | CSD17310 | 8 | Single | 3.1W | 1 | FET General Purpose Power | 6.5 ns | 11.5ns | 5 ns | 15 ns | 100A | 10V | SILICON | DRAIN | SWITCHING | 1.3V | 3.1W Ta | 77 pF | 30V | N-Channel | 1560pF @ 15V | 1.3 V | 5.1m Ω @ 20A, 8V | 1.8V @ 250μA | 21A Ta 100A Tc | 11.6nC @ 4.5V | 3V 8V | +10V, -8V | ||||||||||||||||||||||||||||||||||||||||
| FDD6530A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdd6530a-datasheets-1162.pdf | 20V | 21A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 10 Weeks | 260.37mg | 3 | ACTIVE (Last Updated: 14 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 33W | 1 | FET General Purpose Power | R-PSSO-G2 | 8 ns | 7ns | 4 ns | 18 ns | 21A | 8V | SILICON | DRAIN | SWITCHING | 3.3W Ta 33W Tc | 55 mJ | 20V | N-Channel | 710pF @ 10V | 32m Ω @ 8A, 4.5V | 1.2V @ 250μA | 21A Ta | 9nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||
| PSMN7R0-60YS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-psmn7r060ys115-datasheets-1178.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 4 | 1 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 117W Tc | MO-235 | 89A | 356A | N-Channel | 2712pF @ 30V | 6.4m Ω @ 15A, 10V | 4V @ 1mA | 89A Tc | 45nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMP10A16KTC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmp10a16ktc-datasheets-0492.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.52mm | 6.22mm | Lead Free | 4 | 17 Weeks | 3.949996g | No SVHC | 235mOhm | 3 | no | EAR99 | FAST SWITCHING, LOW THRESHOLD | Tin | No | TO252 (DPAK) | e3 | DUAL | GULL WING | 260 | 4 | 1 | Single | 40 | 4.24W | 1 | 150°C | R-PDSO-G4 | 4.3 ns | 5.2ns | 12.1 ns | 20 ns | 4.6A | 20V | SILICON | SWITCHING | 100V | 2.15W Ta | -100V | P-Channel | 717pF @ 50V | 235m Ω @ 2.1A, 10V | 4V @ 250μA | 3A Ta | 16.5nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| AO4402 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/alphaomegasemiconductor-ao4402-datasheets-3584.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 16 Weeks | 8 | 3.1W | 1 | 20A | 12V | 20V | 3.1W Ta | N-Channel | 4630pF @ 10V | 5.5m Ω @ 20A, 4.5V | 1.6V @ 250μA | 20A Ta | 43nC @ 10V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMA8878 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/onsemiconductor-fdma8878-datasheets-0911.pdf | 6-VDFN Exposed Pad | 2mm | 725μm | 2mm | Lead Free | 6 | 16 Weeks | 30mg | No SVHC | 6 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | Single | 2.4W | 1 | FET General Purpose Power | 6 ns | 2ns | 2 ns | 14 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | 1.8V | 2.4W Ta | 9A | 35 pF | 30V | N-Channel | 720pF @ 15V | 1.8 V | 16m Ω @ 9A, 10V | 3V @ 250μA | 9A Ta 10A Tc | 12nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SI4156DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4156dyt1ge3-datasheets-0949.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 6mOhm | 8 | yes | EAR99 | Tin | unknown | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.5W | 1 | Not Qualified | 25 ns | 20ns | 15 ns | 25 ns | 24A | 20V | SILICON | SWITCHING | 2.2V | 2.5W Ta 6W Tc | 30V | N-Channel | 1700pF @ 15V | 6m Ω @ 15.7A, 10V | 2.2V @ 250μA | 24A Tc | 42nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| BS270 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/onsemiconductor-bs270d74z-datasheets-9062.pdf&product=onsemiconductor-bs270-6827829 | 60V | 400mA | TO-226-3, TO-92-3 (TO-226AA) | 4.7mm | 4.7mm | 3.93mm | Lead Free | 3 | 11 Weeks | 200mg | No SVHC | 2MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Copper, Silver, Tin | No | e3 | Tin (Sn) | BOTTOM | BS270 | Single | 630mW | 1 | FET General Purpose Power | 400mA | 20V | SILICON | SWITCHING | 2.1V | 625mW Ta | 0.4A | 5 pF | 60V | N-Channel | 50pF @ 25V | 2.1 V | 2 Ω @ 500mA, 10V | 2.5V @ 250μA | 400mA Ta | 4.5V 10V | ±20V |
