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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFB38N20DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-irfb38n20dpbf-datasheets-2918.pdf | 200V | 38A | TO-220-3 | 10.668mm | 9.017mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 54Ohm | 3 | EAR99 | Tin | No | Single | 320W | 1 | FET General Purpose Power | 16 ns | 95ns | 47 ns | 29 ns | 44A | 30V | 200V | SILICON | DRAIN | SWITCHING | 5V | 3.8W Ta 300W Tc | TO-220AB | 240 ns | 460 mJ | 200V | N-Channel | 2900pF @ 25V | 5 V | 54m Ω @ 26A, 10V | 5V @ 250μA | 43A Tc | 91nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| HUFA76429D3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-hufa76429d3-datasheets-2646.pdf | 60V | 20A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 8 Weeks | 343.08mg | 27mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 110W | 1 | FET General Purpose Power | 7.7 ns | 36ns | 56 ns | 60 ns | 20A | 16V | SILICON | DRAIN | SWITCHING | 110W Tc | 60V | N-Channel | 1480pF @ 25V | 23m Ω @ 20A, 10V | 3V @ 250μA | 20A Tc | 46nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||
| FDB2532 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-fdp2532-datasheets-0900.pdf | 150V | 79A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 11.33mm | Lead Free | 2 | 8 Weeks | 4.535924g | No SVHC | 16MOhm | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | Tin | No | 79A | e3 | 150V | GULL WING | Single | 310W | 1 | FET General Purpose Power | R-PSSO-G2 | 16 ns | 30ns | 17 ns | 39 ns | 79A | 20V | 150V | SILICON | DRAIN | SWITCHING | 4V | 310W Tc | 400 mJ | 150V | N-Channel | 5870pF @ 25V | 4 V | 16m Ω @ 33A, 10V | 4V @ 250μA | 8A Ta 79A Tc | 107nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| AOTF240L | Alpha & Omega Semiconductor Inc. | $1.71 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 16 Weeks | FET General Purpose Power | 85A | Single | 40V | 1.9W Ta 41W Tc | N-Channel | 3510pF @ 20V | 2.9m Ω @ 20A, 10V | 2.2V @ 250μA | 20A Ta 85A Tc | 72nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFIZ44NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irfiz44npbf-datasheets-2683.pdf | 60V | 30A | TO-220-3 Full Pack | 10.6172mm | 9.8mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | Single | 38W | 1 | 2.5kV | 7.3 ns | 69ns | 60 ns | 47 ns | 31A | 20V | 55V | SILICON | ISOLATED | SWITCHING | 4V | 45W Tc | TO-220AB | 98 ns | 0.024Ohm | 55V | N-Channel | 1300pF @ 25V | 4 V | 24m Ω @ 17A, 10V | 4V @ 250μA | 31A Tc | 65nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRLS3036TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irls3036trlpbf-datasheets-2628.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.652mm | Lead Free | 2 | 12 Weeks | No SVHC | 1.9MOhm | 3 | EAR99 | Tin | No | e3 | GULL WING | 260 | Single | 30 | 380W | 1 | FET General Purpose Power | R-PSSO-G2 | 66 ns | 220ns | 110 ns | 110 ns | 270A | 16V | SILICON | DRAIN | SWITCHING | 2.5V | 380W Tc | 290 mJ | 60V | N-Channel | 11210pF @ 50V | 2.5 V | 2.4m Ω @ 165A, 10V | 2.5V @ 250μA | 195A Tc | 140nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
| AOB27S60L | Alpha & Omega Semiconductor Inc. | $1.52 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 16 Weeks | 357W | 1 | FET General Purpose Powers | 27A | 30V | Single | 600V | 357W Tc | N-Channel | 1294pF @ 100V | 160m Ω @ 13.5A, 10V | 4V @ 250μA | 27A Tc | 26nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD18535KTT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA | 10.18mm | 4.83mm | 8.41mm | Contains Lead | 3 | 12 Weeks | 3 | ACTIVE (Last Updated: 3 days ago) | yes | 4.44mm | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | 260 | CSD18535 | Single | NOT SPECIFIED | 1 | 200A | SILICON | DRAIN | SWITCHING | 60V | 60V | 300W Tc | 400A | 0.0029Ohm | 616 mJ | N-Channel | 6620pF @ 30V | 2m Ω @ 100A, 10V | 2.4V @ 250μA | 200A Ta | 81nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFS3004TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irfs3004trlpbf-datasheets-2716.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.652mm | Lead Free | 2 | 12 Weeks | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 380W | 1 | R-PSSO-G2 | 23 ns | 220ns | 130 ns | 90 ns | 240A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 380W Tc | 40V | N-Channel | 9200pF @ 25V | 1.75m Ω @ 195A, 10V | 4V @ 250μA | 195A Ta | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI7439DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7439dpt1ge3-datasheets-2761.pdf | PowerPAK® SO-8 | 4.9mm | 1.12mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 90mOhm | 8 | yes | EAR99 | ULTRA LOW-ON RESISTANCE | No | e3 | Matte Tin (Sn) - annealed | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.9W | 1 | Other Transistors | 150°C | R-XDSO-C5 | 25 ns | 46ns | 46 ns | 115 ns | -5.2A | 20V | SILICON | DRAIN | SWITCHING | 150V | -4V | 1.9W Ta | 3A | 50A | -150V | P-Channel | -4 V | 90m Ω @ 5.2A, 10V | 4V @ 250μA | 3A Ta | 135nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRF7769L1TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irf7769l1trpbf-datasheets-2812.pdf | DirectFET™ Isometric L8 | Lead Free | 9 | 12 Weeks | 15 | EAR99 | No | BOTTOM | 3.3W | 1 | FET General Purpose Power | R-XBCC-N3 | 44 ns | 32ns | 41 ns | 92 ns | 124A | 20V | SILICON | Single | DRAIN | SWITCHING | 100V | 3.3W Ta 125W Tc | 375A | 500A | 0.0035Ohm | 260 mJ | N-Channel | 11560pF @ 25V | 3.5m Ω @ 74A, 10V | 4V @ 250μA | 20A Ta 124A Tc | 300nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7439DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si7439dpt1ge3-datasheets-2761.pdf | PowerPAK® SO-8 | 4.9mm | 1.12mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 90mOhm | 8 | yes | EAR99 | ULTRA LOW-ON RESISTANCE | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | Other Transistors | 150°C | R-XDSO-C5 | 25 ns | 46ns | 46 ns | 115 ns | -5.2A | 20V | SILICON | DRAIN | SWITCHING | 150V | -4V | 1.9W Ta | 3A | 50A | -150V | P-Channel | 90m Ω @ 5.2A, 10V | 4V @ 250μA | 3A Ta | 135nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRL40SC209 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | StrongIRFET™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irl40sc209-datasheets-2876.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | 12 Weeks | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 375W Tc | 300A | 1200A | 0.0008Ohm | 1404 mJ | N-Channel | 15270pF @ 25V | 0.8m Ω @ 100A, 10V | 2.4V @ 250μA | 478A Tc | 267nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS86350ET80 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms86350et80-datasheets-2409.pdf | 8-PowerTDFN | Lead Free | 5 | 12 Weeks | 56.5mg | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | DUAL | NO LEAD | 260 | 1 | Single | NOT SPECIFIED | 1 | R-PDSO-N5 | 50 ns | 34ns | 11 ns | 40 ns | 198A | 20V | SILICON | DRAIN | SWITCHING | 3.3W Ta 187W Tc | MO-240AA | 693A | 0.0024Ohm | 80V | N-Channel | 8030pF @ 40V | 2.4m Ω @ 25A, 10V | 4.5V @ 250μA | 25A Ta 198A Tc | 155nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPLU300N04S41R1XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-iplu300n04s41r1xtma1-datasheets-2557.pdf | 8-PowerSFN | Lead Free | 2 | 20 Weeks | 8 | yes | EAR99 | ULTRA LOW RESISTANCE | Halogen Free | SINGLE | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-F2 | 300A | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 300W Tc | 1200A | 0.00115Ohm | 300 mJ | N-Channel | 12090pF @ 25V | 1.15m Ω @ 100A, 10V | 4V @ 125μA | 300A Tc | 151nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| STU7NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stu7nm60n-datasheets-2623.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.9mm | 2.4mm | Lead Free | 3 | 26 Weeks | No SVHC | 900MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | Tin | No | STU7N | 3 | Single | 45W | 1 | FET General Purpose Power | 7 ns | 10ns | 12 ns | 26 ns | 5A | 25V | SILICON | SWITCHING | 3V | 45W Tc | 5A | 20A | 600V | N-Channel | 363pF @ 50V | 900m Ω @ 2.5A, 10V | 4V @ 250μA | 5A Tc | 14nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||
| PHP191NQ06LT,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-php191nq06lt127-datasheets-2640.pdf | TO-220-3 | 10.3mm | 9.4mm | 4.7mm | 3 | 12 Weeks | 6.000006g | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | NO | 3 | 1 | Single | 300W | 1 | 63 ns | 232ns | 178 ns | 273 ns | 75A | 15V | 55V | SILICON | DRAIN | SWITCHING | 300W Tc | 240A | 0.0044Ohm | 560 mJ | 55V | N-Channel | 7665pF @ 25V | 3.7m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 95.6nC @ 5V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||
| STF140N6F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf140n6f7-datasheets-2453.pdf | TO-220-3 Full Pack | 22 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STF14 | NOT SPECIFIED | 60V | 33W Tc | N-Channel | 3100pF @ 25V | 3.5m Ω @ 35A, 10V | 4V @ 250μA | 70A Tc | 55nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3705NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irl3705npbf-datasheets-2475.pdf | 55V | 89A | TO-220-3 | 10.5156mm | 8.77mm | 4.69mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 12mOhm | 3 | 2.54mm | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY | Tin | No | Single | 130W | 1 | FET General Purpose Power | 12 ns | 140ns | 78 ns | 37 ns | 89A | 16V | 55V | SILICON | DRAIN | SWITCHING | 2V | 170W Tc | TO-220AB | 140 ns | 77A | 55V | N-Channel | 3600pF @ 25V | 2 V | 10m Ω @ 46A, 10V | 2V @ 250μA | 89A Tc | 98nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||
| IRF100S201 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irf100s201-datasheets-2395.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 12 Weeks | D2PAK (TO-263AB) | 9.5nF | 192A | 100V | 441W Tc | 3.5mOhm | N-Channel | 9500pF @ 50V | 4.2mOhm @ 115A, 10V | 4V @ 250μA | 192A Tc | 255nC @ 10V | 4.2 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R180P7SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -40°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipa60r180p7sxksa1-datasheets-2490.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 26W Tc | TO-220AB | 53A | 0.18Ohm | 56 mJ | N-Channel | 1081pF @ 400V | 180m Ω @ 5.6A, 10V | 4V @ 280μA | 18A Tc | 25nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLS3034TRL7PP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irls3034trl7pp-datasheets-2501.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | 12 Weeks | 7 | yes | EAR99 | No | SINGLE | GULL WING | 380W | 1 | R-PSSO-G6 | 71 ns | 590ns | 200 ns | 94 ns | 240A | 20V | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 380W Tc | 1540A | 0.0014Ohm | 250 mJ | 40V | N-Channel | 10990pF @ 40V | 1.4m Ω @ 200A, 10V | 2.5V @ 250μA | 240A Tc | 180nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| NDFPD1N150CG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2000 | /files/onsemiconductor-ndfpd1n150cg-datasheets-2519.pdf | TO-220-3 Full Pack | 28.85mm | 4.7mm | 10.16mm | Lead Free | 6 Weeks | 6.000006g | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | 1 | Single | 8 ns | 13ns | 280 ns | 43 ns | 100mA | 30V | 1500V | 2W Ta 20W Tc | N-Channel | 80pF @ 30V | 150 Ω @ 50mA, 10V | 100mA Ta | 4.2nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RFP70N06 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-rfp70n06-datasheets-2523.pdf | 60V | 70A | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | Lead Free | 3 | 9 Weeks | 1.8g | No SVHC | 14mOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | 1 | Single | 150W | 1 | FET General Purpose Power | 10 ns | 137ns | 24 ns | 32 ns | 70A | 20V | SILICON | DRAIN | SWITCHING | 4V | 150W Tc | TO-220AB | 60V | N-Channel | 2250pF @ 25V | 14m Ω @ 70A, 10V | 4V @ 250μA | 70A Tc | 156nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF1404PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irf1404pbf-datasheets-2533.pdf | 40V | 162A | TO-220-3 | 10.668mm | 19.8mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 4mOhm | 3 | 2.54mm | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Tin | No | 1 | Single | 333W | 1 | FET General Purpose Power | 175°C | 17 ns | 190ns | 33 ns | 46 ns | 202A | 20V | 40V | SILICON | DRAIN | SWITCHING | 4V | 333W Tc | TO-220AB | 117 ns | 75A | 808A | 620 mJ | 40V | N-Channel | 5669pF @ 25V | 4 V | 4m Ω @ 121A, 10V | 4V @ 250μA | 202A Tc | 196nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRFD9024PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfd9024pbf-datasheets-2543.pdf | -60V | -1.6A | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | Lead Free | 8 Weeks | No SVHC | 280mOhm | 4 | No | Single | 1.3W | 1 | 4-DIP, Hexdip, HVMDIP | 570pF | 13 ns | 68ns | 68 ns | 15 ns | -1.6A | 20V | 60V | -4V | 1.3W Ta | 200 ns | 280mOhm | 60V | P-Channel | 570pF @ 25V | 280mOhm @ 960mA, 10V | 4V @ 250μA | 1.6A Ta | 19nC @ 10V | 280 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXTP18P10T | IXYS | $1.91 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtp18p10t-datasheets-2547.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | unknown | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | 18A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 83W Tc | TO-220AB | 60A | 0.12Ohm | 200 mJ | P-Channel | 2100pF @ 25V | 120m Ω @ 9A, 10V | 4.5V @ 250μA | 18A Tc | 39nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R199CPATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipb60r199cpatma1-datasheets-2354.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 3 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 139W | 1 | Not Qualified | R-PSSO-G2 | 10 ns | 5ns | 50 ns | 16A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 139W Tc | N-Channel | 1520pF @ 100V | 199m Ω @ 9.9A, 10V | 3.5V @ 660μA | 16A Tc | 43nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| STU7LN80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stu7ln80k5-datasheets-2385.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STU7L | NOT SPECIFIED | 5A | 800V | 85W Tc | N-Channel | 270pF @ 100V | 1.15 Ω @ 2.5A, 10V | 5V @ 100μA | 5A Tc | 12nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP65NF06 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp65nf06-datasheets-2391.pdf | TO-220-3 | 3 | 12 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | STP65N | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 110W Tc | TO-220AB | 60A | 240A | 0.014Ohm | 390 mJ | N-Channel | 1700pF @ 25V | 14m Ω @ 30A, 10V | 4V @ 250μA | 60A Tc | 75nC @ 10V | 10V | ±20V |
