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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| CSD19535KCS | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-220-3 | 10.16mm | 4.7mm | 8.7mm | Lead Free | 3 | 6 Weeks | 6.000006g | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | 4.58mm | EAR99 | AVALANCHE RATED | Tin | not_compliant | e3 | NOT SPECIFIED | CSD19535 | 1 | Single | NOT SPECIFIED | 300W | 1 | 32 ns | 15ns | 5 ns | 60 ns | 150A | 20V | SILICON | DRAIN | SWITCHING | 2.7V | 300W Tc | 400A | 0.0044Ohm | 100V | N-Channel | 7930pF @ 50V | 3.6m Ω @ 100A, 10V | 3.4V @ 250μA | 150A Ta | 101nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| STF7NM80 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std7nm80-datasheets-2102.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | 3 | 16 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STF7N | 3 | Single | 25W | 1 | FET General Purpose Power | 20 ns | 8ns | 10 ns | 35 ns | 6.5A | 30V | SILICON | ISOLATED | SWITCHING | 25W Tc | TO-220AB | 26A | 240 mJ | 800V | N-Channel | 620pF @ 25V | 4 V | 1.05 Ω @ 3.25A, 10V | 5V @ 250μA | 6.5A Tc | 18nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| AOTF27S60L | Alpha & Omega Semiconductor Inc. | $1.90 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 16 Weeks | TO-220-3F | 1.294nF | 27A | 600V | 50W Tc | N-Channel | 1294pF @ 100V | 160mOhm @ 13.5A, 10V | 4V @ 250μA | 27A Tc | 26nC @ 10V | 160 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP120NF10 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb120nf10t4-datasheets-5136.pdf | 100V | 120A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 12 Weeks | 4.535924g | No SVHC | 10.5mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | STP120 | 3 | Single | 312W | 1 | FET General Purpose Power | 25 ns | 90ns | 68 ns | 132 ns | 110A | 20V | SILICON | DRAIN | SWITCHING | 4V | 312W Tc | TO-220AB | 440A | 550 mJ | 100V | N-Channel | 5200pF @ 25V | 10.5m Ω @ 60A, 10V | 4V @ 250μA | 110A Tc | 233nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRFB3077PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irfb3077pbf-datasheets-4004.pdf | 75V | 210A | TO-220-3 | 10.668mm | 9.02mm | 4.82mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | EAR99 | No | Single | 370W | 1 | FET General Purpose Power | 25 ns | 87ns | 95 ns | 69 ns | 210A | 20V | 75V | SILICON | DRAIN | SWITCHING | 4V | 370W Tc | TO-220AB | 63 ns | 850A | 200 mJ | 75V | N-Channel | 9400pF @ 50V | 4 V | 3.3m Ω @ 75A, 10V | 4V @ 250μA | 120A Tc | 220nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SUP90142E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup90142ege3-datasheets-4014.pdf | TO-220-3 | 14 Weeks | EAR99 | e3 | Tin (Sn) | 260 | 30 | 200V | 375W Tc | N-Channel | 31200pF @ 100V | 15.2m Ω @ 30A, 10V | 4V @ 250μA | 90A Tc | 87nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R199CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-ipp60r199cpxksa1-datasheets-4016.pdf | 600V | 16A | TO-220-3 | Lead Free | 3 | 12 Weeks | 3 | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | SINGLE | 3 | 139W | 1 | 10 ns | 5ns | 50 ns | 16A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 139W Tc | TO-220AB | N-Channel | 1520pF @ 100V | 199m Ω @ 9.9A, 10V | 3.5V @ 660μA | 16A Tc | 43nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| AOT2500L | Alpha & Omega Semiconductor Inc. | $2.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-220-3 | 18 Weeks | FET General Purpose Power | 152A | Single | 150V | 2.1W Ta 375W Tc | N-Channel | 6460pF @ 75V | 6.5m Ω @ 20A, 10V | 3.5V @ 250μA | 11.5A Ta 152A Tc | 136nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPA11N80C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-spa11n80c3xksa1-datasheets-3925.pdf | 800V | 11A | TO-220-3 Full Pack | 10.65mm | 9.83mm | 4.85mm | Lead Free | 3 | No SVHC | 3 | yes | AVALANCHE RATED | 11A | e3 | Tin (Sn) | 800V | Halogen Free | NO | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 41W | 1 | Not Qualified | 25 ns | 15ns | 7 ns | 72 ns | 11A | 20V | SILICON | ISOLATED | SWITCHING | 3V | 34W Tc | TO-220AB | 0.45Ohm | 470 mJ | 800V | N-Channel | 1600pF @ 100V | 450m Ω @ 7.1A, 10V | 3.9V @ 680μA | 11A Tc | 85nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRF740LCPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irf740lcpbf-datasheets-3932.pdf | 400V | 10A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 550mOhm | 3 | No | 1 | Single | 125W | 1 | TO-220AB | 1.1nF | 11 ns | 31ns | 20 ns | 25 ns | 10A | 30V | 400V | 4V | 125W Tc | 570 ns | 550mOhm | 400V | N-Channel | 1100pF @ 25V | 550mOhm @ 6A, 10V | 4V @ 250μA | 10A Tc | 39nC @ 10V | 550 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFP3206PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfp3206pbf-datasheets-3940.pdf | TO-247-3 | 15.87mm | 24.99mm | 5.3086mm | Lead Free | 3 | 12 Weeks | No SVHC | 3MOhm | 3 | EAR99 | No | 1 | Single | 280W | 1 | FET General Purpose Power | 175°C | 19 ns | 82ns | 83 ns | 55 ns | 200A | 20V | SILICON | DRAIN | SWITCHING | 4V | 280W Tc | TO-247AC | 50 ns | 840A | 60V | N-Channel | 6540pF @ 50V | 3m Ω @ 75A, 10V | 4V @ 150μA | 120A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| STV300NH02L | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ III | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stv300nh02l-datasheets-3947.pdf | PowerSO-10 Exposed Bottom Pad | 9.6mm | 3.75mm | 9.5mm | Lead Free | 10 | 12 Weeks | No SVHC | 1MOhm | 10 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | DUAL | GULL WING | 250 | STV300 | 10 | Single | 300W | 1 | FET General Purpose Power | 18 ns | 275ns | 94.4 ns | 138 ns | 200A | 20V | SILICON | SWITCHING | 1.5V | 300W Tc | 280A | 2296 mJ | 24V | N-Channel | 7055pF @ 15V | 1m Ω @ 80A, 10V | 2V @ 250μA | 200A Tc | 109nC @ 10V | 10V 5V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| TK9J90E,S1E | Toshiba Semiconductor and Storage | $2.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-3P-3, SC-65-3 | 16 Weeks | 6.961991g | 1 | Single | TO-3P(N) | 2nF | 80 ns | 40ns | 35 ns | 140 ns | 9A | 30V | 900V | 250W Tc | 1Ohm | 900V | N-Channel | 2000pF @ 25V | 1.3Ohm @ 4.5A, 10V | 4V @ 900μA | 9A Ta | 46nC @ 10V | 1.3 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI9640GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfi9640gpbf-datasheets-3957.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 500mOhm | 3 | No | 1 | Single | 40W | 1 | TO-220-3 | 1.2nF | 14 ns | 43ns | 38 ns | 39 ns | 6.1A | 20V | 200V | -4V | 40W Tc | 300 ns | 500mOhm | -200V | P-Channel | 1200pF @ 25V | -4 V | 500mOhm @ 3.7A, 10V | 4V @ 250μA | 6.1A Tc | 44nC @ 10V | 500 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| HUF75344G3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-huf75344g3-datasheets-3963.pdf | 55V | 75A | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | Lead Free | 3 | 10 Weeks | 6.39g | No SVHC | 8MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 285W | 1 | FET General Purpose Power | 13 ns | 125ns | 57 ns | 46 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 4V | 285W Tc | 55V | N-Channel | 3200pF @ 25V | 4 V | 8m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 210nC @ 20V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPA90R500C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa90r500c3xksa1-datasheets-3863.pdf | TO-220-3 Full Pack | 3 | yes | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 900V | 900V | 34W Tc | TO-220AB | 11A | 24A | 0.5Ohm | 388 mJ | N-Channel | 1700pF @ 100V | 500m Ω @ 6.6A, 10V | 3.5V @ 740μA | 11A Tc | 68nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW10NK60Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp10nk60zfp-datasheets-5354.pdf | 600V | 10A | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | STW10N | 3 | Single | 156W | 1 | FET General Purpose Power | 20 ns | 20ns | 30 ns | 55 ns | 10A | 30V | SILICON | SWITCHING | 3.75V | 156W Tc | TO-247AC | 0.75Ohm | 600V | N-Channel | 1370pF @ 25V | 750m Ω @ 4.5A, 10V | 4.5V @ 250μA | 10A Tc | 70nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| FDA24N40F | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fda24n40f-datasheets-3876.pdf | TO-3P-3, SC-65-3 | 16.2mm | 20.1mm | 5mm | Lead Free | 3 | 4 Weeks | 6.401g | No SVHC | 190MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 235W | 1 | FET General Purpose Power | Not Qualified | 40 ns | 92ns | 75 ns | 120 ns | 23A | 30V | SILICON | SWITCHING | 3V | 235W Tc | 92A | 400V | N-Channel | 3030pF @ 25V | 190m Ω @ 11.5A, 10V | 5V @ 250μA | 23A Tc | 60nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| CSD18535KTTT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA | 10.18mm | 4.83mm | 8.41mm | Contains Lead | 3 | 6 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 4 days ago) | yes | 4.44mm | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | 260 | CSD18535 | Single | NOT SPECIFIED | 1 | 279A | SILICON | DRAIN | SWITCHING | 60V | 60V | 1.9V | 300W Tc | 200A | 400A | 0.0029Ohm | 616 mJ | N-Channel | 6620pF @ 30V | 2m Ω @ 100A, 10V | 2.4V @ 250μA | 200A Ta 279A Tc | 81nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FDP045N10A-F102 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-220-3 | 9 Weeks | yes | NO | FET General Purpose Power | Single | 100V | 263W Tc | 120A | N-Channel | 5270pF @ 50V | 4.5m Ω @ 100A, 10V | 4V @ 250μA | 120A Tc | 74nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB017N08N5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipb017n08n5atma1-datasheets-3502.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.7mm | Contains Lead | 2 | 13 Weeks | 3.949996g | 3 | yes | EAR99 | not_compliant | Halogen Free | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 375W | 1 | 175°C | R-PSSO-G2 | 40 ns | 36ns | 37 ns | 102 ns | 177A | 20V | 80V | SILICON | DRAIN | SWITCHING | 3V | 375W Tc | 480A | 80V | N-Channel | 16900pF @ 40V | 1.7m Ω @ 100A, 10V | 3.8V @ 280μA | 120A Tc | 223nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| STF26N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf26n60m2-datasheets-3909.pdf | TO-220-3 Full Pack | 3 | 16 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | not_compliant | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | STF26 | NOT SPECIFIED | 1 | R-PSFM-T3 | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 30W Tc | TO-220AB | 80A | 0.165Ohm | 250 mJ | N-Channel | 165m Ω @ 11A, 10V | 4V @ 250μA | 20A Tc | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IAUT260N10S5N019ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™-5 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/infineontechnologies-iaut260n10s5n019atma1-datasheets-3915.pdf | 8-PowerSFN | 2.4mm | 20 Weeks | EAR99 | PG-HSOF-8 | NOT SPECIFIED | 1 | NOT SPECIFIED | 300W | 175°C | 21 ns | 49 ns | 260A | 20V | 300W Tc | 100V | N-Channel | 11830pF @ 50V | 1.9m Ω @ 100A, 10V | 3.8V @ 210μA | 260A Tc | 166nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL4010PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-irfsl4010pbf-datasheets-3814.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 4.7MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 40 | 375W | 1 | FET General Purpose Power | 21 ns | 86ns | 77 ns | 100 ns | 180A | 20V | SILICON | DRAIN | SWITCHING | 4V | 375W Tc | 720A | 100V | N-Channel | 9575pF @ 50V | 4.7m Ω @ 106A, 10V | 4V @ 250μA | 180A Tc | 215nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| CSD18535KCS | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd18535kcs-datasheets-4710.pdf | TO-220-3 | 10.16mm | 4.7mm | 8.7mm | Contains Lead | 3 | 12 Weeks | 3 | ACTIVE (Last Updated: 2 days ago) | yes | 4.58mm | EAR99 | AVALANCHE RATED | Copper, Tin | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | CSD18535 | 3 | Single | NOT SPECIFIED | 1 | 9 ns | 3ns | 3 ns | 19 ns | 200A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 300W Tc | 400A | 0.0029Ohm | 616 mJ | N-Channel | 6620pF @ 30V | 2m Ω @ 100A, 10V | 2.4V @ 250μA | 200A Ta | 81nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| STF7N105K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf7n105k5-datasheets-3829.pdf | TO-220-3 Full Pack | Lead Free | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STF7N | NOT SPECIFIED | FET General Purpose Power | 4A | Single | 1050V | 25W Tc | 4A | N-Channel | 380pF @ 100V | 2 Ω @ 2A, 10V | 5V @ 100μA | 4A Tc | 17nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP120P04P4L03AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-ipb120p04p4l03atma1-datasheets-2194.pdf | TO-220-3 | Contains Lead | 3 | 14 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 21 ns | 16ns | 57 ns | 85 ns | 120A | 16V | -40V | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 136W Tc | TO-220AB | 480A | 0.0052Ohm | 78 mJ | P-Channel | 15000pF @ 25V | 3.4m Ω @ 100A, 10V | 2.2V @ 340μA | 120A Tc | 234nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFB4127PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfb4127pbf-datasheets-3839.pdf | TO-220-3 | 10.668mm | 19.8mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 20MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 1 | Single | 375W | 1 | FET General Purpose Power | 175°C | 17 ns | 18ns | 22 ns | 56 ns | 76A | 20V | 200V | SILICON | DRAIN | SWITCHING | 5V | 375W Tc | TO-220AB | 250 mJ | 200V | N-Channel | 5380pF @ 50V | 5 V | 20m Ω @ 44A, 10V | 5V @ 250μA | 76A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FDPF18N50 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fdpf18n50-datasheets-4719.pdf | TO-220-3 Full Pack | 10.16mm | 9.19mm | 4.7mm | Lead Free | 3 | 9 Weeks | 2.27g | No SVHC | 265MOhm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | FAST SWITCHING | Tin | not_compliant | e3 | NOT SPECIFIED | Single | NOT SPECIFIED | 38.5W | 1 | FET General Purpose Power | Not Qualified | 55 ns | 165ns | 90 ns | 95 ns | 18A | 30V | SILICON | ISOLATED | SWITCHING | 5V | 38.5W Tc | TO-220AB | 72A | 945 mJ | 500V | N-Channel | 2860pF @ 25V | 265m Ω @ 9A, 10V | 5V @ 250μA | 18A Tc | 60nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| STP265N6F6AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ F6 | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp265n6f6ag-datasheets-3851.pdf | TO-220-3 | 38 Weeks | EAR99 | NOT SPECIFIED | STP265 | NOT SPECIFIED | FET General Purpose Power | 180A | Single | 60V | 300W Tc | N-Channel | 11800pF @ 25V | 2.85m Ω @ 60A, 10V | 4V @ 250μA | 180A Tc | 183nC @ 10V | 10V | ±20V |
