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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFB3207ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irfs3207ztrrpbf-datasheets-3199.pdf | 75V | 170A | TO-220-3 | 10.66mm | 9.017mm | 4.82mm | Lead Free | 3 | 12 Weeks | No SVHC | 4.1MOhm | 3 | EAR99 | Tin | No | Single | 300mW | 1 | FET General Purpose Power | 20 ns | 68ns | 55 ns | 170A | 20V | 75V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | TO-220AB | 54 ns | 670A | 75V | N-Channel | 6920pF @ 50V | 4 V | 4.1m Ω @ 75A, 10V | 4V @ 150μA | 120A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRFB4321PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfb4321pbf-datasheets-3304.pdf | 150V | 83A | TO-220-3 | 10.6426mm | 9.02mm | 4.82mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | Single | 330mW | 1 | FET General Purpose Power | 18 ns | 60ns | 35 ns | 25 ns | 83A | 30V | 150V | SILICON | DRAIN | SWITCHING | 5V | 350W Tc | TO-220AB | 130 ns | 75A | 150V | N-Channel | 4460pF @ 50V | 5 V | 15m Ω @ 33A, 10V | 5V @ 250μA | 85A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IRFS7434TRL7PP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfs7434trl7pp-datasheets-2144.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Lead Free | 12 Weeks | 7 | EAR99 | No | 245W | 1 | FET General Purpose Power | 23 ns | 125ns | 85 ns | 107 ns | 240A | 20V | Single | 40V | 245W Tc | N-Channel | 10250pF @ 25V | 1m Ω @ 100A, 10V | 3.9V @ 250μA | 240A Tc | 315nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPB20N60C3ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-spb20n60c3atma1-datasheets-3125.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | no | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | 650V | 600V | 208W Tc | 20.7A | 62.1A | 0.19Ohm | 690 mJ | N-Channel | 2400pF @ 25V | 190m Ω @ 13.1A, 10V | 3.9V @ 1mA | 20.7A Tc | 114nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS3006TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irfs3006trlpbf-datasheets-3151.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 12 Weeks | 2.5MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 375W | 1 | FET General Purpose Power | R-PSSO-G2 | 16 ns | 182ns | 189 ns | 118 ns | 195A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 375W Tc | 270A | 60V | N-Channel | 8970pF @ 50V | 2.5m Ω @ 170A, 10V | 4V @ 250μA | 195A Tc | 300nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FDB2614 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdb2614-datasheets-3100.pdf | 200V | 62A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 11.33mm | Lead Free | 2 | 7 Weeks | 1.31247g | No SVHC | 27MOhm | 2 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | Tin | not_compliant | e3 | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 260W | 1 | FET General Purpose Power | Not Qualified | 77 ns | 284ns | 162 ns | 103 ns | 62A | 30V | 200V | SILICON | DRAIN | 4V | 260W Tc | 200V | N-Channel | 7230pF @ 25V | 4 V | 27m Ω @ 31A, 10V | 5V @ 250μA | 62A Tc | 99nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IRFZ34PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfz34pbf-datasheets-3177.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 50mOhm | 3 | No | 1 | Single | 88W | 1 | TO-220AB | 1.2nF | 13 ns | 100ns | 52 ns | 29 ns | 30A | 20V | 60V | 4V | 88W Tc | 50mOhm | N-Channel | 1200pF @ 25V | 4 V | 50mOhm @ 18A, 10V | 4V @ 250μA | 30A Tc | 46nC @ 10V | 50 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| AUIRFR5305 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-auirfr5305trl-datasheets-1139.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 26 Weeks | No SVHC | 65MOhm | 3 | EAR99 | AVALANCHE RATED | Tin | No | e3 | GULL WING | 260 | Single | 30 | 110W | 1 | Other Transistors | R-PSSO-G2 | 14 ns | 66ns | 63 ns | 39 ns | 31A | 20V | SILICON | DRAIN | SWITCHING | 55V | -2V | 110W Tc | TO-252AA | 280 mJ | -55V | P-Channel | 1200pF @ 25V | 65m Ω @ 16A, 10V | 4V @ 250μA | 31A Tc | 63nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| AOT410L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SDMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/alphaomegasemiconductor-aot410l-datasheets-4388.pdf | TO-220-3 | 16 Weeks | 333W | 1 | FET General Purpose Powers | 150A | 25V | Single | 100V | 1.9W Ta 333W Tc | N-Channel | 7950pF @ 50V | 6.5m Ω @ 20A, 10V | 4V @ 250μA | 12A Ta 150A Tc | 129nC @ 10V | 7V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK6A60D(STA4,Q,M) | Toshiba Semiconductor and Storage | $0.88 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/toshiba-tk6a60dsta4qm-datasheets-4391.pdf | TO-220-3 Full Pack | 3 | 16 Weeks | 3 | No | SINGLE | 3 | 1 | 20ns | 12 ns | 6A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 40W Tc | 6A | 24A | N-Channel | 800pF @ 25V | 1.25 Ω @ 3A, 10V | 4V @ 1mA | 6A Ta | 16nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| STP9NK60Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp9nk60z-datasheets-3046.pdf | 600V | 7A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP9N | 3 | Single | 125W | 1 | FET General Purpose Power | 19 ns | 17ns | 15 ns | 43 ns | 3.5A | 30V | SILICON | SWITCHING | 3.75V | 125W Tc | TO-220AB | 7A | 28A | 0.95Ohm | 600V | N-Channel | 1110pF @ 25V | 950m Ω @ 3.5A, 10V | 4.5V @ 100μA | 7A Tc | 53nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IRF6218PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2003 | /files/infineontechnologies-irf6218pbf-datasheets-3055.pdf | -150V | -27A | TO-220-3 | 10.5156mm | 15.24mm | 4.69mm | Lead Free | 14 Weeks | No SVHC | 3 | Tin | No | Single | 250W | 1 | TO-220AB | 2.21nF | 21 ns | 70ns | 30 ns | 35 ns | -27A | 20V | -150V | 150V | -5V | 250W Tc | 150mOhm | -150V | P-Channel | 2210pF @ 25V | -5 V | 150mOhm @ 16A, 10V | 5V @ 250μA | 27A Tc | 110nC @ 10V | 150 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| CSD18532KCS | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-220-3 | 10.16mm | 4.7mm | 8.7mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | 4.58mm | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | not_compliant | e3 | NOT SPECIFIED | CSD18532 | Single | NOT SPECIFIED | 216W | 1 | FET General Purpose Power | 7.8 ns | 5.3ns | 5.6 ns | 24.2 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 1.8V | 250W Tc | 400A | N-Channel | 4680pF @ 30V | 1.8 V | 4.2m Ω @ 100A, 10V | 2.2V @ 250μA | 100A Tc | 53nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| STP9NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp9nm60n-datasheets-3068.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | No SVHC | 3 | NRND (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP9N | 3 | Single | 70W | 1 | FET General Purpose Power | 28 ns | 23ns | 26.7 ns | 52.5 ns | 6.5A | 25V | SILICON | SWITCHING | 600V | 600V | 3V | 70W Tc | TO-220AB | 9A | 26A | 0.745Ohm | N-Channel | 452pF @ 50V | 745m Ω @ 3.25A, 10V | 4V @ 250μA | 6.5A Tc | 17.4nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||
| IPP90R800C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp90r800c3xksa1-datasheets-3072.pdf | TO-220-3 | 3 | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 900V | 900V | 104W Tc | TO-220AB | 6.9A | 15A | 0.8Ohm | 157 mJ | N-Channel | 1100pF @ 100V | 800m Ω @ 4.1A, 10V | 3.5V @ 460μA | 6.9A Tc | 42nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| STP110N10F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VII | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stp110n10f7-datasheets-3078.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 7mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STP110 | Single | 150W | FET General Purpose Powers | 25 ns | 52 ns | 110A | 20V | 150W Tc | 100V | N-Channel | 5500pF @ 50V | 7m Ω @ 55A, 10V | 4V @ 250μA | 110A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCB20N60FTM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/onsemiconductor-fcb20n60ftm-datasheets-2860.pdf | 600V | 20A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 4 Weeks | 1.31247g | 190mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | GULL WING | FCB20N60 | Single | 208W | 1 | FET General Purpose Power | R-PSSO-G2 | 62 ns | 140ns | 65 ns | 230 ns | 20A | 30V | SILICON | DRAIN | SWITCHING | 208W Tc | 60A | 690 mJ | 600V | N-Channel | 3080pF @ 25V | 190m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 98nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| STF5N95K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf5n95k5-datasheets-2982.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 17 Weeks | 329.988449mg | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | Tin | NOT SPECIFIED | STF5N | 1 | Single | NOT SPECIFIED | 1 | 12 ns | 16ns | 25 ns | 32 ns | 3.5A | 30V | SILICON | ISOLATED | SWITCHING | 950V | 950V | 25W Tc | TO-220AB | 70 mJ | N-Channel | 220pF @ 100V | 2.5 Ω @ 1.5A, 10V | 5V @ 100μA | 3.5A Tc | 12.5nC @ 10V | 10V | |||||||||||||||||||||||||||||||||||||||||||
| IPP80R450P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipp80r450p7xksa1-datasheets-2984.pdf | TO-220-3 | 18 Weeks | yes | NOT SPECIFIED | NOT SPECIFIED | 800V | 73W Tc | N-Channel | 770pF @ 500V | 450m Ω @ 4.5A, 10V | 3.5V @ 220μA | 11A Tc | 24nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDPF190N15A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf190n15a-datasheets-2989.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 3 | 8 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 33W | 1 | FET General Purpose Power | 18 ns | 16ns | 8 ns | 32 ns | 27.4A | 20V | SILICON | ISOLATED | SWITCHING | 33W Tc | TO-220AB | 150V | N-Channel | 2685pF @ 25V | 19m Ω @ 27.4A, 10V | 4V @ 250μA | 27.4A Tc | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF1407PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2001 | /files/infineontechnologies-irf1407pbf-datasheets-2999.pdf | 75V | 130A | TO-220-3 | 10.668mm | 16.51mm | 4.826mm | Lead Free | 12 Weeks | No SVHC | 7.8Ohm | 3 | No | Single | 330W | 1 | TO-220AB | 5.6nF | 11 ns | 140 ns | 150 ns | 130A | 20V | 75V | 75V | 4V | 330W Tc | 7.8mOhm | 75V | N-Channel | 5600pF @ 25V | 4 V | 7.8mOhm @ 78A, 10V | 4V @ 250μA | 130A Tc | 250nC @ 10V | 7.8 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| AUIRFZ24NS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirfz24ns-datasheets-3018.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 10.67mm | 4.83mm | 9.65mm | 2 | 16 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | DUAL | GULL WING | 260 | Single | 30 | 3.8W | 1 | FET General Purpose Power | R-PDSO-G2 | 4.9 ns | 34ns | 27 ns | 19 ns | 17A | 20V | SILICON | DRAIN | SWITCHING | 4V | 3.8W Ta 45W Tc | 68A | 0.07Ohm | 55V | N-Channel | 370pF @ 25V | 70m Ω @ 10A, 10V | 4V @ 250μA | 17A Tc | 20nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| STH275N8F7-6AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ F7 | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sth275n8f76ag-datasheets-3023.pdf | TO-263-7, D2Pak (6 Leads + Tab) | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STH275 | NOT SPECIFIED | FET General Purpose Power | 180A | Single | 80V | 315W Tc | N-Channel | 13600pF @ 50V | 2.1m Ω @ 90A, 10V | 4.5V @ 250μA | 180A Tc | 193nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ44VZSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irfz44vzspbf-datasheets-3027.pdf | 60V | 57A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.572mm | 9.65mm | Lead Free | 2 | 15 Weeks | No SVHC | 12mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 92W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 14 ns | 62ns | 38 ns | 35 ns | 57A | 20V | 60V | SILICON | DRAIN | SWITCHING | 4V | 92W Tc | 60V | N-Channel | 1690pF @ 25V | 4 V | 12m Ω @ 34A, 10V | 4V @ 250μA | 57A Tc | 65nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SI7431DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7431dpt1e3-datasheets-5285.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 8 | yes | EAR99 | ULTRA-LOW RESISTANCE | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | Other Transistors | R-XDSO-C5 | 23 ns | 49ns | 49 ns | 110 ns | -2.2A | 20V | SILICON | DRAIN | SWITCHING | 200V | -4V | 1.9W Ta | 30A | 45 mJ | -200V | P-Channel | -4 V | 174m Ω @ 3.8A, 10V | 4V @ 250μA | 2.2A Ta | 135nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||
| FDP085N10A-F102 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdp085n10af102-datasheets-2944.pdf | TO-220-3 | 10.36mm | 15.215mm | 4.672mm | Lead Free | 9 Weeks | 1.8g | 3 | ACTIVE (Last Updated: 2 days ago) | yes | Tin | No | Single | 188W | 1 | FET General Purpose Power | 18 ns | 22ns | 8 ns | 29 ns | 96A | 20V | 188W Tc | 100V | N-Channel | 2695pF @ 50V | 8.5m Ω @ 96A, 10V | 4V @ 250μA | 96A Tc | 40nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF27P06 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fqpf27p06-datasheets-2953.pdf | -60V | -17A | TO-220-3 Full Pack | 10.67mm | 16.3mm | 4.7mm | Lead Free | 3 | 9 Weeks | 2.27g | No SVHC | 70MOhm | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 47W | 1 | Other Transistors | 18 ns | 185ns | 90 ns | 30 ns | 17A | 25V | SILICON | ISOLATED | SWITCHING | 60V | -2V | 47W Tc | 68A | 560 mJ | -60V | P-Channel | 1400pF @ 25V | 70m Ω @ 8.5A, 10V | 4V @ 250μA | 17A Tc | 43nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||
| IRF740PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irf740pbf-datasheets-2959.pdf | 400V | 10A | TO-220-3 | 10.41mm | 19.89mm | 4.7mm | Lead Free | 11 Weeks | 6.000006g | Unknown | 550MOhm | 3 | Tin | No | 1 | Single | 125W | 1 | 150°C | TO-220AB | 1.4nF | 14 ns | 27ns | 24 ns | 50 ns | 10A | 20V | 400V | 400V | 4V | 125W Tc | 790 ns | 550mOhm | 400V | N-Channel | 1400pF @ 25V | 4 V | 550mOhm @ 6A, 10V | 4V @ 250μA | 10A Tc | 63nC @ 10V | 550 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| FDB024N08BL7 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-fdb024n08bl7-datasheets-2729.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 10.2mm | 4.7mm | 9.4mm | 6 | 16 Weeks | 1.312g | 7 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | 245 | Single | 246W | 1 | FET General Purpose Power | R-PSSO-G6 | 47 ns | 66ns | 41 ns | 87 ns | 229A | 20V | SILICON | DRAIN | SWITCHING | 80V | 80V | 246W Tc | TO-263CB | 0.0024Ohm | N-Channel | 13530pF @ 40V | 2.4m Ω @ 100A, 10V | 4.5V @ 250μA | 120A Tc | 178nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFIZ44NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irfiz44npbf-datasheets-2683.pdf | 60V | 30A | TO-220-3 Full Pack | 10.6172mm | 9.8mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | Single | 38W | 1 | 2.5kV | 7.3 ns | 69ns | 60 ns | 47 ns | 31A | 20V | 55V | SILICON | ISOLATED | SWITCHING | 4V | 45W Tc | TO-220AB | 98 ns | 0.024Ohm | 55V | N-Channel | 1300pF @ 25V | 4 V | 24m Ω @ 17A, 10V | 4V @ 250μA | 31A Tc | 65nC @ 10V | 10V | ±20V |
