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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FDP52N20 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-fdp52n20-datasheets-3622.pdf | 200V | 52A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 4 Weeks | 1.8g | No SVHC | 49MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | AVALANCHE ENERGY RATED | Tin | No | e3 | Single | 357W | 1 | FET General Purpose Power | 53 ns | 175ns | 29 ns | 48 ns | 52A | 30V | SILICON | SWITCHING | 5V | 357W Tc | TO-220AB | 208A | 2520 mJ | 200V | N-Channel | 2900pF @ 25V | 49m Ω @ 26A, 10V | 5V @ 250μA | 52A Tc | 63nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IRFS9N60APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfs9n60apbf-datasheets-3643.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 750mOhm | 3 | No | 1 | Single | 170W | 1 | D2PAK | 1.4nF | 13 ns | 25ns | 22 ns | 30 ns | 9.2A | 30V | 600V | 4V | 170W Tc | 750mOhm | 600V | N-Channel | 1400pF @ 25V | 750mOhm @ 5.5A, 10V | 4V @ 250μA | 9.2A Tc | 49nC @ 10V | 750 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FDPF39N20 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf39n20-datasheets-3648.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 3 | 4 Weeks | 2.27g | No SVHC | 66MOhm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | FAST SWITCHING | No | e3 | Tin (Sn) | Single | 37W | 1 | FET General Purpose Power | 30 ns | 160ns | 150 ns | 150 ns | 39A | 30V | SILICON | ISOLATED | SWITCHING | 5V | 37W Tc | TO-220AB | 860 mJ | 200V | N-Channel | 2130pF @ 25V | 66m Ω @ 19.5A, 10V | 5V @ 250μA | 39A Tc | 49nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| SUM110P04-05-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sum110p0405e3-datasheets-3655.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 5.08mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.437803g | No SVHC | 4.2mOhm | 3 | yes | EAR99 | Tin | No | e3 | GULL WING | 4 | 1 | Single | 15W | 1 | 175°C | R-PSSO-G2 | 25 ns | 290ns | 35 ns | 110 ns | -110A | 20V | SILICON | DRAIN | SWITCHING | 40V | -3V | 15W Ta 375W Tc | 240A | -40V | P-Channel | 11300pF @ 25V | 220ns | 480ns | -3 V | 5m Ω @ 20A, 10V | 4V @ 250μA | 110A Tc | 280nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SIHB12N65E-GE3 | Vishay Siliconix | $2.42 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb12n65ege3-datasheets-3509.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 18 Weeks | 1.437803g | Unknown | 3 | No | GULL WING | 1 | Single | 156W | 1 | R-PSSO-G2 | 16 ns | 19ns | 18 ns | 35 ns | 12A | 20V | SILICON | SWITCHING | 650V | 156W Tc | 28A | 226 mJ | 700V | N-Channel | 1224pF @ 100V | 380m Ω @ 6A, 10V | 4V @ 250μA | 12A Tc | 70nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STF6N95K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf6n95k5-datasheets-3514.pdf | TO-220-3 Full Pack | 10.4mm | Lead Free | 3 | 17 Weeks | 1.25Ohm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | Tin | No | e3 | SINGLE | STF6N | 3 | 1 | 25W | 1 | FET General Purpose Power | 12 ns | 12ns | 21 ns | 33 ns | 9A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 25W Tc | TO-220AB | 9A | 90 mJ | 950V | N-Channel | 450pF @ 100V | 1.25 Ω @ 3A, 10V | 5V @ 100μA | 9A Tc | 13nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IPB020NE7N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb020ne7n3gatma1-datasheets-3519.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 13 Weeks | 3 | no | EAR99 | not_compliant | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | 19 ns | 26ns | 22 ns | 70 ns | 120A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 300W Tc | 480A | 0.002Ohm | 1100 mJ | N-Channel | 14400pF @ 37.5V | 2m Ω @ 100A, 10V | 3.8V @ 273μA | 120A Tc | 206nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF100B201 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irf100s201-datasheets-2395.pdf | TO-220-3 | Lead Free | 12 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 192A | 100V | 441W Tc | N-Channel | 9500pF @ 50V | 4.2m Ω @ 115A, 10V | 4V @ 250μA | 192A Tc | 255nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1324PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irf1324pbf-datasheets-3370.pdf | TO-220-3 | 10.668mm | 9.02mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | EAR99 | No | Single | 300W | 1 | FET General Purpose Power | 17 ns | 190ns | 120 ns | 83 ns | 340A | 20V | 24V | SILICON | SWITCHING | 4V | 300W Tc | TO-220AB | 270 mJ | 24V | N-Channel | 7590pF @ 24V | 4 V | 1.5m Ω @ 195A, 10V | 4V @ 250μA | 195A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDBL0065N40 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdbl0065n40-datasheets-3171.pdf | 8-PowerSFN | Lead Free | 8 | 8 Weeks | 850.0521mg | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | DUAL | NO LEAD | 245 | Single | NOT SPECIFIED | 1 | 300A | SILICON | DRAIN | SWITCHING | 40V | 40V | 429W Tj | MO-299A | 0.00065Ohm | 1064 mJ | N-Channel | 15900pF @ 25V | 0.65m Ω @ 80A, 10V | 4V @ 250μA | 300A Tc | 296nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FDB075N15A-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdb075n15af085-datasheets-3242.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 33 Weeks | 1.31247g | 3 | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSSO-G2 | 33 ns | 46ns | 25 ns | 76 ns | 110A | 4V | SILICON | DRAIN | SWITCHING | 333W Tc | 0.0075Ohm | 502 mJ | 150V | N-Channel | 5595pF @ 75V | 7.5m Ω @ 80A, 10V | 4V @ 250μA | 110A Tc | 95nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDPF16N50T | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf16n50t-datasheets-3406.pdf | 500V | 16A | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 4 Weeks | 2.27g | No SVHC | 3 | ACTIVE (Last Updated: 4 days ago) | yes | not_compliant | e3 | Tin (Sn) | Single | 52W | 1 | FET General Purpose Power | 40 ns | 150ns | 80 ns | 65 ns | 16A | 30V | 5V | 38.5W Tc | 500V | N-Channel | 1945pF @ 25V | 380m Ω @ 8A, 10V | 5V @ 250μA | 16A Tc | 45nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPB90R340C3ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-ipb90r340c3atma1-datasheets-3144.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 6 Weeks | no | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 208W | 1 | R-PSSO-G2 | 70 ns | 20ns | 25 ns | 400 ns | 15A | 20V | 900V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 208W Tc | 34A | 0.34Ohm | 678 mJ | N-Channel | 2400pF @ 100V | 340m Ω @ 9.2A, 10V | 3.5V @ 1mA | 15A Tc | 94nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| AOTF15S60L | Alpha & Omega Semiconductor Inc. | $0.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | 3 | 1 | 15A | 30V | 600V | 27.8W Tc | N-Channel | 717pF @ 100V | 290m Ω @ 7.5A, 10V | 3.8V @ 250μA | 15A Tc | 15.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLIZ34GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-irliz34gpbf-datasheets-3432.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 50mOhm | 3 | No | 1 | Single | 42W | 1 | TO-220-3 | 1.6nF | 14 ns | 170ns | 56 ns | 30 ns | 20A | 10V | 60V | 2V | 42W Tc | 50mOhm | N-Channel | 1600pF @ 25V | 2 V | 50mOhm @ 12A, 5V | 2V @ 250μA | 20A Tc | 35nC @ 5V | 50 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FQP17N40 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqp17n40-datasheets-3449.pdf | 400V | 16A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 5 Weeks | 1.8g | No SVHC | 270mOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 170W | 1 | FET General Purpose Power | 40 ns | 185ns | 105 ns | 90 ns | 16A | 30V | SILICON | SWITCHING | 5V | 170W Tc | TO-220AB | 64A | 400V | N-Channel | 2300pF @ 25V | 5 V | 270m Ω @ 8A, 10V | 5V @ 250μA | 16A Tc | 60nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| NTP5860NG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-ntp5860ng-datasheets-3459.pdf | TO-220-3 | Lead Free | 3 | 4 Weeks | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | NO | 3 | Single | 283W | 1 | FET General Purpose Powers | 27 ns | 117ns | 150 ns | 66 ns | 220A | 20V | SILICON | DRAIN | 283W Tc | TO-220AB | 660A | 60V | N-Channel | 10760pF @ 25V | 3m Ω @ 75A, 10V | 4V @ 250μA | 220A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP51N25 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdp51n25-datasheets-3472.pdf | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | Lead Free | 3 | 8 Weeks | 1.8g | No SVHC | 60MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | FAST SWITCHING | No | e3 | Tin (Sn) | Single | 320W | 1 | FET General Purpose Power | 62 ns | 465ns | 130 ns | 98 ns | 51A | 30V | SILICON | SWITCHING | 5V | 320W Tc | TO-220AB | 204A | 250V | N-Channel | 3410pF @ 25V | 60m Ω @ 25.5A, 10V | 5V @ 250μA | 51A Tc | 70nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IRFB4321PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfb4321pbf-datasheets-3304.pdf | 150V | 83A | TO-220-3 | 10.6426mm | 9.02mm | 4.82mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | Single | 330mW | 1 | FET General Purpose Power | 18 ns | 60ns | 35 ns | 25 ns | 83A | 30V | 150V | SILICON | DRAIN | SWITCHING | 5V | 350W Tc | TO-220AB | 130 ns | 75A | 150V | N-Channel | 4460pF @ 50V | 5 V | 15m Ω @ 33A, 10V | 5V @ 250μA | 85A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IPB180N04S400ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipb180n04s400atma1-datasheets-3312.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Contains Lead | 6 | 16 Weeks | 7 | EAR99 | ULTRA-LOW RESISTANCE | AEC-Q101 | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G6 | 53 ns | 24ns | 58 ns | 67 ns | 180A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 300W Tc | 0.00098Ohm | 1250 mJ | N-Channel | 22880pF @ 25V | 0.98m Ω @ 100A, 10V | 4V @ 230μA | 180A Tc | 286nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7759L2TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irf7759l2trpbf-datasheets-3220.pdf | DirectFET™ Isometric L8 | 9.144mm | 508μm | 7.112mm | Lead Free | 9 | 12 Weeks | No SVHC | 11 | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 125W | 1 | FET General Purpose Power | R-XBCC-N9 | 18 ns | 87ns | 33 ns | 80 ns | 26A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3V | 3.3W Ta 125W Tc | 640A | 0.0023Ohm | 257 mJ | 75V | N-Channel | 12222pF @ 25V | 2.3m Ω @ 96A, 10V | 4V @ 250μA | 26A Ta 375A Tc | 300nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FDPF18N50T | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdp18n50-datasheets-3264.pdf | 500V | 18A | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 3 | 9 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 38.5W | 1 | FET General Purpose Power | Not Qualified | 55 ns | 165ns | 90 ns | 95 ns | 18A | 30V | SILICON | ISOLATED | SWITCHING | 38.5W Tc | TO-220AB | 72A | 0.265Ohm | 945 mJ | 500V | N-Channel | 2860pF @ 25V | 265m Ω @ 9A, 10V | 5V @ 250μA | 18A Tc | 60nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| STF40NF20 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf40nf20-datasheets-3348.pdf | 200V | 40A | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 45MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | STF40N | 3 | Single | 40W | 1 | FET General Purpose Power | 20 ns | 44ns | 22 ns | 74 ns | 20A | 20V | SILICON | ISOLATED | SWITCHING | 3V | 40W Tc | TO-220AB | 200V | N-Channel | 2500pF @ 25V | 45m Ω @ 20A, 10V | 4V @ 250μA | 40A Tc | 75nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| PSMN4R3-100PS,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn4r3100ps127-datasheets-3196.pdf | TO-220-3 | 3 | 12 Weeks | 3 | Tin | No | e3 | NO | 3 | Single | 338W | 1 | 45 ns | 91ns | 63 ns | 122 ns | 120A | 20V | 100V | SILICON | DRAIN | SWITCHING | 338W Tc | TO-220AB | 100V | N-Channel | 9900pF @ 50V | 4.3m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL40B209 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | Lead Free | 12 Weeks | Unknown | 3 | EAR99 | NOT SPECIFIED | Single | NOT SPECIFIED | 56 ns | 188 ns | 195A | 20V | 40V | 2.4V | 375W Tc | N-Channel | 15140pF @ 25V | 1.25m Ω @ 100A, 10V | 2.4V @ 250μA | 195A Tc | 270nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN3R3-80PS,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn3r380ps127-datasheets-3206.pdf | TO-220-3 | 3 | 12 Weeks | 3 | No | e3 | Tin (Sn) | NO | 3 | Single | 338W | 1 | 41 ns | 43ns | 44 ns | 109 ns | 120A | 20V | 80V | SILICON | DRAIN | SWITCHING | 338W Tc | TO-220AB | 676 mJ | 80V | N-Channel | 9961pF @ 40V | 3.3m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 139nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFIBE30GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfibe30gpbf-datasheets-3231.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 3Ohm | 3 | No | 1 | Single | 35W | 1 | TO-220-3 | 1.3nF | 12 ns | 33ns | 30 ns | 82 ns | 2.1A | 20V | 800V | 4V | 35W Tc | 3Ohm | 800V | N-Channel | 1300pF @ 25V | 3Ohm @ 1.3A, 10V | 4V @ 250μA | 2.1A Tc | 78nC @ 10V | 3 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| PSMNR90-30BL,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/nexperiausainc-psmnr9030bl118-datasheets-2275.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 306W Tc | 120A | 1573A | 0.0013Ohm | N-Channel | 14850pF @ 15V | 1m Ω @ 25A, 10V | 2.2V @ 1mA | 120A Tc | 243nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP18N50 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdp18n50-datasheets-3264.pdf | 500V | 18A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 9 Weeks | No SVHC | 265MOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | FAST SWITCHING | Tin | No | 18A | e3 | 500V | Single | 235W | 1 | FET General Purpose Power | 55 ns | 165ns | 90 ns | 95 ns | 18A | 30V | SILICON | SWITCHING | 5V | 235W Tc | TO-220AB | 945 mJ | 500V | N-Channel | 2860pF @ 25V | 265m Ω @ 9A, 10V | 5V @ 250μA | 18A Tc | 60nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IRF7769L2TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irf7769l2trpbf-datasheets-3275.pdf | DirectFET™ Isometric L8 | 9.144mm | 676μm | 7.112mm | 9 | 10 Weeks | No SVHC | 11 | EAR99 | No | e1 | TIN SILVER COPPER | BOTTOM | 260 | 1 | 30 | 3.3W | 1 | FET General Purpose Power | 175°C | R-XBCC-N9 | 44 ns | 32ns | 41 ns | 92 ns | 20A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.3W Ta 125W Tc | 112 ns | 395A | 500A | 0.0035Ohm | 260 mJ | 100V | N-Channel | 11560pF @ 25V | 2.7 V | 3.5m Ω @ 74A, 10V | 4V @ 250μA | 375A Tc | 300nC @ 10V | 10V | ±20V |
