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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | Max Input Voltage | JESD-609 Code | Terminal Finish | Polarity | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Accuracy | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Max Output Current | Min Input Voltage | Interface IC Type | Output Voltage | Forward Voltage | Output Type | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STFU13N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfu13n80k5-datasheets-4392.pdf | TO-220-3 Full Pack | 3 | 27 Weeks | ACTIVE (Last Updated: 8 months ago) | YES | SINGLE | STFU1 | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 800V | 800V | 35W Tc | TO-220AB | 12A | 48A | 0.45Ohm | 148 mJ | N-Channel | 870pF @ 100V | 450m Ω @ 6A, 10V | 5V @ 100μA | 12A Tc | 29nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP4004PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irfp4004pbf-datasheets-4394.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.3086mm | Lead Free | 3 | 12 Weeks | No SVHC | 1.7MOhm | 3 | EAR99 | No | Single | 380W | 1 | FET General Purpose Power | 59 ns | 370ns | 190 ns | 160 ns | 350A | 20V | SILICON | DRAIN | SWITCHING | 4V | 380W Tc | TO-247AC | 130 ns | 290 mJ | 40V | N-Channel | 8920pF @ 25V | 1.7m Ω @ 195A, 10V | 4V @ 250μA | 195A Tc | 330nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP4227PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irfp4227pbf-datasheets-4406.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.3086mm | Lead Free | 3 | 12 Weeks | No SVHC | 25MOhm | 3 | EAR99 | FAST SWITCHING | Tin | No | Single | 330W | 1 | FET General Purpose Power | 33 ns | 20ns | 31 ns | 21 ns | 65A | 30V | 240V | SILICON | DRAIN | SWITCHING | 5V | 330W Tc | TO-247AC | 150 ns | 260A | 200V | N-Channel | 4600pF @ 25V | 5 V | 25m Ω @ 46A, 10V | 5V @ 250μA | 65A Tc | 98nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| STW27N60M2-EP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2-EP | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl8dn6lf6ag-datasheets-5453.pdf | TO-247-3 | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STW27N | NOT SPECIFIED | 20A | 600V | 170W Tc | N-Channel | 1320pF @ 100V | 163m Ω @ 10A, 10V | 4.75V @ 250μA | 20A Tc | 33nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW10NK80Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp10nk80z-datasheets-1153.pdf | 800V | 9A | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 12 Weeks | No SVHC | 900mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | STW10N | 3 | Single | 160W | 1 | FET General Purpose Power | 30 ns | 20ns | 17 ns | 65 ns | 9A | 30V | SILICON | SWITCHING | 3.75V | 160W Tc | 9A | 290 mJ | 800V | N-Channel | 2180pF @ 25V | 900m Ω @ 4.5A, 10V | 4.5V @ 100μA | 9A Tc | 72nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| BMS3003-1E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/onsemiconductor-bms30031e-datasheets-4426.pdf | TO-220-3 Full Pack | Lead Free | 21 Weeks | 5 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | 5.5V | e3 | Tin (Sn) | Positive | 1 | 1 % | 300mA | 2.3V | BUFFER OR INVERTER BASED MOSFET DRIVER | 3V | Fixed | 78A | 2W Ta 40W Tc | 60V | P-Channel | 13200pF @ 20V | 6.5m Ω @ 39A, 10V | 78A Ta | 285nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPG50PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfpg50pbf-datasheets-4430.pdf | 1kV | 6.1A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 2Ohm | 3 | No | 1 | Single | 190W | 1 | TO-247-3 | 2.8nF | 19 ns | 35ns | 36 ns | 130 ns | 6.1A | 20V | 1000V | 4V | 190W Tc | 950 ns | 2Ohm | 1kV | N-Channel | 2800pF @ 25V | 4 V | 2Ohm @ 3.6A, 10V | 4V @ 250μA | 6.1A Tc | 190nC @ 10V | 2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| NTP082N65S3F | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET®, SuperFET® II | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/onsemiconductor-ntp082n65s3f-datasheets-4436.pdf | TO-220-3 | 12 Weeks | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 650V | 313W Tc | N-Channel | 3410pF @ 400V | 82m Ω @ 20A, 10V | 5V @ 4mA | 40A Tc | 81nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDPF2710T | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf2710t-datasheets-4443.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 3 | 8 Weeks | 2.27g | No SVHC | 42.5MOhm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Tin | No | e3 | Single | 62.5W | 1 | FET General Purpose Power | 80 ns | 252ns | 154 ns | 112 ns | 25A | 30V | SILICON | ISOLATED | SWITCHING | 3.9V | 62.5W Tc | TO-220AB | 250V | N-Channel | 7280pF @ 25V | 3.9 V | 42.5m Ω @ 25A, 10V | 5V @ 250μA | 25A Tc | 101nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IXTP180N10T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixta180n10t-datasheets-2185.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 480W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 54ns | 31 ns | 42 ns | 180A | SILICON | DRAIN | SWITCHING | 480W Tc | TO-220AB | 450A | 0.0064Ohm | 750 mJ | 100V | N-Channel | 6900pF @ 25V | 6.4m Ω @ 25A, 10V | 4.5V @ 250μA | 180A Tc | 151nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| STW11NM80 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -65°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb11nm80t4-datasheets-4117.pdf | 800V | 11A | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 16 Weeks | No SVHC | 400mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Tin (Sn) | STW11N | 3 | Single | 150W | 1 | FET General Purpose Power | 22 ns | 17ns | 15 ns | 46 ns | 5.5A | 30V | SILICON | SWITCHING | 4V | 150W Tc | 44A | 400 mJ | 800V | N-Channel | 1630pF @ 25V | 400m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 43.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| STF8NK100Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp8nk100z-datasheets-1276.pdf | 1kV | 6.5A | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 1.85Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | STF8N | 3 | Single | 40W | 1 | FET General Purpose Power | 28 ns | 19ns | 30 ns | 59 ns | 6.5A | 30V | SILICON | SWITCHING | 1000V | 3.75V | 40W Tc | TO-220AB | 1kV | N-Channel | 2180pF @ 25V | 1.85 Ω @ 3.15A, 10V | 4.5V @ 100μA | 6.5A Tc | 102nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFP4229PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irfp4229pbf-datasheets-4461.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.3086mm | Lead Free | 3 | 12 Weeks | No SVHC | 46MOhm | 3 | EAR99 | No | Single | 310mW | 1 | FET General Purpose Power | 25 ns | 27ns | 19 ns | 44 ns | 44A | 30V | 250V | SILICON | DRAIN | SWITCHING | 5V | 310W Tc | TO-247AC | 290 ns | 250V | N-Channel | 4560pF @ 25V | 5 V | 46m Ω @ 26A, 10V | 5V @ 250μA | 44A Tc | 110nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| TK100E10N1,S1X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 | 12 Weeks | 3 | 100A | 100V | 255W Tc | N-Channel | 8800pF @ 50V | 3.4m Ω @ 50A, 10V | 4V @ 1mA | 100A Ta | 140nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP3077PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irfp3077pbf-datasheets-4373.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.3086mm | Lead Free | 3 | 12 Weeks | No SVHC | 3.3MOhm | 3 | EAR99 | No | Single | 340W | 1 | FET General Purpose Power | 15 ns | 76ns | 77 ns | 40 ns | 120A | 20V | 75V | SILICON | DRAIN | SWITCHING | 4V | 340W Tc | TO-247AC | 63 ns | 200A | 850A | 200 mJ | 75V | N-Channel | 9400pF @ 50V | 4 V | 3.3m Ω @ 75A, 10V | 4V @ 250μA | 120A Tc | 220nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF3805STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf3805strlpbf-datasheets-3006.pdf | 55V | 75A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.699mm | 9.65mm | Contains Lead | 2 | 12 Weeks | No SVHC | 3.3MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 130W | 1 | FET General Purpose Power | R-PSSO-G2 | 1.3V | 20 ns | 20ns | 87 ns | 87 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | 890A | 940 mJ | 55V | N-Channel | 7960pF @ 25V | 4 V | 3.3m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 290nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| STF24N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf24n60m2-datasheets-4279.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 16 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | STF24 | Single | 30W | 1 | 14 ns | 9ns | 61 ns | 60 ns | 18A | 25V | 30W Tc | 600V | N-Channel | 1060pF @ 100V | 190m Ω @ 9A, 10V | 4V @ 250μA | 18A Tc | 29nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BMS3004-1E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-bms30041e-datasheets-4285.pdf | TO-220-3 Full Pack | Lead Free | 3 | 21 Weeks | 6.000006g | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | not_compliant | e3 | NO | NOT SPECIFIED | 3 | 1 | Single | NOT SPECIFIED | 1 | 70 ns | 245ns | 650 ns | 1.4 μs | 68A | 20V | SILICON | ISOLATED | 75V | 2W Ta 40W Tc | TO-220AB | 272A | -75V | P-Channel | 13400pF @ 20V | 8.5m Ω @ 34A, 10V | 68A Ta | 300nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP1405PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irfp1405pbf-datasheets-4289.pdf | 55V | 95A | TO-247-3 | 15.87mm | 20.7mm | 5.3086mm | Lead Free | 3 | 12 Weeks | No SVHC | 5.3Ohm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | Single | 310W | 1 | FET General Purpose Power | 12 ns | 160ns | 150 ns | 140 ns | 95A | 20V | 55V | SILICON | DRAIN | SWITCHING | 4V | 310W Tc | TO-247AC | 640A | 55V | N-Channel | 5600pF @ 25V | 4 V | 5.3m Ω @ 95A, 10V | 4V @ 250μA | 95A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| STP23N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stp23n80k5-datasheets-4302.pdf | TO-220-3 | Lead Free | 17 Weeks | EAR99 | NOT SPECIFIED | STP23N | NOT SPECIFIED | 16A | 800V | 190W Tc | N-Channel | 1000pF @ 100V | 280m Ω @ 8A, 10V | 5V @ 100μA | 16A Tc | 33nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW13N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw13n80k5-datasheets-4306.pdf | TO-247-3 | Lead Free | 3 | 17 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | SINGLE | NOT SPECIFIED | STW13N | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 190W Tc | 12A | 48A | 0.45Ohm | 148 mJ | N-Channel | 870pF @ 100V | 450m Ω @ 6A, 10V | 5V @ 100μA | 12A Tc | 29nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2030 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | GaNFET (Gallium Nitride) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/epc-epc2030-datasheets-4243.pdf | Die | 12 Weeks | Die | 40V | N-Channel | 1900pF @ 20V | 2.4mOhm @ 30A, 5V | 2.5V @ 16mA | 31A Ta | 18nC @ 5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP3703PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irfp3703pbf-datasheets-4334.pdf&product=infineontechnologies-irfp3703pbf-6828335 | 30V | 210A | TO-247-3 | 15.87mm | 20.7mm | 5.3086mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | No | Single | 230W | 1 | FET General Purpose Power | 18 ns | 123ns | 24 ns | 53 ns | 210A | 20V | 30V | SILICON | DRAIN | SWITCHING | 3.8W Ta 230W Tc | TO-247AC | 120 ns | 90A | 30V | N-Channel | 8250pF @ 25V | 4 V | 2.8m Ω @ 76A, 10V | 4V @ 250μA | 210A Tc | 209nC @ 10V | 7V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| STF28N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf28n60m2-datasheets-4348.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 16 Weeks | 329.988449mg | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STF28 | 1 | Single | NOT SPECIFIED | 30W | 14.5 ns | 100 ns | 24A | 25V | 30W Tc | 600V | N-Channel | 1370pF @ 100V | 150m Ω @ 12A, 10V | 4V @ 250μA | 24A Tc | 37nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF11NM60ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp11nm60nd-datasheets-1010.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | 3 | 16 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STF11 | 3 | Single | 90W | 1 | FET General Purpose Power | 16 ns | 7ns | 9 ns | 50 ns | 10A | 25V | SILICON | ISOLATED | SWITCHING | 4V | 25W Tc | TO-220AB | 40A | 0.45Ohm | 200 mJ | 600V | N-Channel | 850pF @ 50V | 450m Ω @ 5A, 10V | 5V @ 250μA | 10A Tc | 30nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP460LCPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfp460lcpbf-datasheets-4357.pdf | 500V | 20A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 12 Weeks | 38.000013g | Unknown | 270mOhm | 3 | 20A | 500V | 1 | Single | 280W | 1 | TO-247-3 | 3.6nF | 18 ns | 77ns | 43 ns | 40 ns | 20A | 30V | 500V | 4V | 280W Tc | 270mOhm | 500V | N-Channel | 3600pF @ 25V | 4 V | 270mOhm @ 12A, 10V | 4V @ 250μA | 20A Tc | 120nC @ 10V | 270 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFP360PBF | Vishay Siliconix | $1.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp360pbf-datasheets-4363.pdf | 400V | 23A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 200mOhm | 3 | No | 1 | Single | 280W | 1 | TO-247-3 | 4.5nF | 18 ns | 79ns | 67 ns | 100 ns | 23A | 20V | 400V | 4V | 280W Tc | 630 ns | 200mOhm | 400V | N-Channel | 4500pF @ 25V | 4 V | 200mOhm @ 14A, 10V | 4V @ 250μA | 23A Tc | 210nC @ 10V | 200 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFB4229PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irfb4229pbf-datasheets-4222.pdf | TO-220-3 | 10.6426mm | 16.51mm | 4.82mm | Lead Free | 3 | 12 Weeks | No SVHC | 46MOhm | 3 | EAR99 | No | Single | 330mW | 1 | FET General Purpose Power | 31ns | 21 ns | 30 ns | 46A | 30V | 250V | SILICON | DRAIN | SWITCHING | 5V | 330W Tc | TO-220AB | 290 ns | 250V | N-Channel | 4560pF @ 25V | 5 V | 46m Ω @ 26A, 10V | 5V @ 250μA | 46A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| STW3N150 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stfw3n150-datasheets-1364.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | Tin | No | e3 | STW3N | 3 | Single | 140W | 1 | FET General Purpose Power | 24 ns | 47ns | 61 ns | 45 ns | 1.3A | 30V | SILICON | SWITCHING | 1500V | 4V | 140W Tc | 2.5A | 9Ohm | 450 mJ | 1.5kV | N-Channel | 939pF @ 25V | 9 Ω @ 1.3A, 10V | 5V @ 250μA | 2.5A Tc | 29.3nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| STF23N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf23n80k5-datasheets-4257.pdf | TO-220-3 Full Pack | Lead Free | 17 Weeks | ACTIVE (Last Updated: 2 weeks ago) | EAR99 | NOT SPECIFIED | STF23 | NOT SPECIFIED | 16A | 800V | 35W Tc | N-Channel | 1000pF @ 100V | 280m Ω @ 8A, 10V | 5V @ 100μA | 16A Tc | 33nC @ 10V | 10V | ±30V |
