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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SPD02N80C3ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | /files/infineontechnologies-spd02n80c3atma1-datasheets-5586.pdf | 800V | 2A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 18 Weeks | 3 | 42W | PG-TO252-3 | 290pF | 25 ns | 15ns | 18 ns | 65 ns | 2A | 20V | 800V | 800V | 42W Tc | 2.4Ohm | N-Channel | 290pF @ 100V | 2.7Ohm @ 1.2A, 10V | 3.9V @ 120μA | 2A Tc | 16nC @ 10V | 2.7 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN15H310SE-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn15h310se13-datasheets-5681.pdf | TO-261-4, TO-261AA | 4 | 22 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G4 | 7.1A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 1.9W Ta | 2A | 10A | 0.31Ohm | 1.45 mJ | N-Channel | 405pF @ 25V | 310m Ω @ 1.5A, 10V | 3V @ 250μA | 2A Ta 7.1A Tc | 8.7nC @ 10V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR7446TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irfr7446trpbf-datasheets-5703.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 12 Weeks | 3.949996g | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 1 | Single | 30 | 1 | FET General Purpose Power | R-PSSO-G2 | 9.8 ns | 13ns | 20 ns | 32 ns | 56A | 20V | SILICON | DRAIN | SWITCHING | 40V | 40V | 3V | 98W Tc | TO-252AA | 520A | N-Channel | 3150pF @ 25V | 3.9m Ω @ 56A, 10V | 3.9V @ 100μA | 56A Tc | 130nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STW23N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stw23n80k5-datasheets-5716.pdf | TO-247-3 | Lead Free | 17 Weeks | EAR99 | NOT SPECIFIED | STW23N | NOT SPECIFIED | 16A | 800V | 190W Tc | N-Channel | 1000pF @ 100V | 280m Ω @ 8A, 10V | 5V @ 100μA | 16A Tc | 33nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4686DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si4686dyt1e3-datasheets-5730.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 9.5mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 3W | 1 | FET General Purpose Power | 20 ns | 20ns | 8 ns | 20 ns | 18.2A | 20V | SILICON | SWITCHING | 1V | 3W Ta 5.2W Tc | 30V | N-Channel | 1220pF @ 15V | 9.5m Ω @ 13.8A, 10V | 3V @ 250μA | 18.2A Tc | 26nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FDC8601 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdc8601-datasheets-5502.pdf | SOT-23-6 Thin, TSOT-23-6 | 3mm | 1mm | 1.7mm | Lead Free | 6 | 12 Weeks | 36mg | No SVHC | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | GULL WING | Single | 1.6W | 1 | FET General Purpose Power | 4.5 ns | 1.3ns | 2 ns | 7.6 ns | 2.7A | 20V | SILICON | SWITCHING | 3V | 1.6W Ta | 5 pF | 100V | N-Channel | 210pF @ 50V | 3 V | 109m Ω @ 2.7A, 10V | 4V @ 250μA | 2.7A Ta | 5nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| MIC94053YC6-TR | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | /files/microchiptechnology-mic94052yc6tr-datasheets-2935.pdf | -6V | -2A | 6-TSSOP, SC-88, SOT-363 | 2.2mm | 1mm | 1.35mm | Lead Free | 7 Weeks | No SVHC | 6 | No | MIC94053 | Single | 270mW | 1 | SC-70-6 | 15 ns | 60 ns | 2A | 6V | 6V | -1.2V | 270mW Ta | 180mOhm | P-Channel | 84mOhm @ 100mA, 4.5V | 1.2V @ 250μA | 2A Ta | 84 mΩ | 1.8V 4.5V | 6V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH6005LK3-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmth6005lk313-datasheets-5536.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 23 Weeks | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 90A | 60V | 2.1W Ta 100W Tc | N-Channel | 2962pF @ 30V | 5.6m Ω @ 50A, 10V | 3V @ 250μA | 90A Tc | 47.1nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LND150N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/microchiptechnology-lnd150n8g-datasheets-2839.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | Lead Free | 3 | 8 Weeks | 219.992299mg | No SVHC | 3 | EAR99 | HIGH INPUT IMPEDANCE | Tin | No | e3 | BOTTOM | 1 | Single | 740mW | 1 | 90 ns | 450ns | 450 ns | 100 ns | 30mA | 20V | SILICON | SWITCHING | 740mW Ta | 500V | N-Channel | 10pF @ 25V | 1000 Ω @ 500μA, 0V | 30mA Tj | Depletion Mode | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD4141-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdd4141f085-datasheets-5317.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 40 Weeks | yes | ULTRA-LOW RESISTANCE | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 2.4W Ta 69W Tc | 10.8A | 100A | 0.0123Ohm | 337 mJ | P-Channel | 2775pF @ 20V | 12.3m Ω @ 12.7A, 10V | 3V @ 250μA | 10.8A Ta 50A Tc | 50nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD180N10N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipd180n10n3gatma1-datasheets-5168.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 18 Weeks | YES | SINGLE | GULL WING | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 71W Tc | TO-252AA | 43A | 172A | 0.018Ohm | 50 mJ | N-Channel | 1800pF @ 50V | 18m Ω @ 33A, 10V | 3.5V @ 33μA | 43A Tc | 25nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR2905ZTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irfr2905ztrpbf-datasheets-5307.pdf | 55V | 42A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.39mm | 6.22mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 14.5MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 110W | 1 | FET General Purpose Power | 175°C | R-PSSO-G2 | 14 ns | 66ns | 35 ns | 31 ns | 59A | 20V | SILICON | DRAIN | SWITCHING | 4V | 110W Tc | TO-252AA | 240A | 82 mJ | 55V | N-Channel | 1380pF @ 25V | 4 V | 14.5m Ω @ 36A, 10V | 4V @ 250μA | 42A Tc | 44nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| BSC066N06NSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-bsc066n06nsatma1-datasheets-5325.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 3ns | 64A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 46W Tc | 15A | 256A | 0.0066Ohm | 21 mJ | N-Channel | 1500pF @ 30V | 6.6m Ω @ 50A, 10V | 3.3V @ 20μA | 64A Tc | 21nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9120TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1998 | /files/vishaysiliconix-irfr9120trpbf-datasheets-5334.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 600mOhm | 3 | No | 56A | 100V | 1 | Single | 2.5W | 1 | D-Pak | 390pF | 9.5 ns | 29ns | 25 ns | 21 ns | 5.6A | 20V | 100V | -2V | 2.5W Ta 42W Tc | 600mOhm | P-Channel | 390pF @ 25V | -2 V | 600mOhm @ 3.4A, 10V | 4V @ 250μA | 5.6A Tc | 18nC @ 10V | 600 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| RFD16N05LSM9A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | 50V | 16A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 260.37mg | No SVHC | 47MOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | MEGAFET | No | e3 | Tin (Sn) | GULL WING | Single | 60W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 30ns | 14 ns | 42 ns | 16mA | 10V | SILICON | DRAIN | SWITCHING | 2V | 60W Tc | TO-252AA | 45A | 50V | N-Channel | 2 V | 47m Ω @ 16A, 5V | 2V @ 250mA | 16A Tc | 80nC @ 10V | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||
| FDMS8025S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench®, SyncFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdms8025s-datasheets-5201.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Lead Free | 5 | 18 Weeks | 68.1mg | No SVHC | 2.8MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | FLAT | Single | 50W | 1 | FET General Purpose Power | R-PDSO-F5 | 11 ns | 4.5ns | 3.7 ns | 29 ns | 49A | 20V | SILICON | DRAIN | SWITCHING | 1.7V | 2.5W Ta 50W Tc | MO-240AA | 24A | 100A | 66 mJ | 30V | N-Channel | 3000pF @ 15V | 2.8m Ω @ 24A, 10V | 3V @ 1mA | 24A Ta 49A Tc | 47nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPD35N10S3L26ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-ipd35n10s3l26atma1-datasheets-5432.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 100V | 71W Tc | 35A | 140A | 0.0319Ohm | 175 mJ | N-Channel | 2700pF @ 25V | 24m Ω @ 35A, 10V | 2.4V @ 39μA | 35A Tc | 39nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| STS6NF20V | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sts6nf20v-datasheets-5459.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.25mm | 4mm | Lead Free | 8 | 12 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | 260 | STS6N | 8 | Single | 30 | 2.5W | 1 | FET General Purpose Power | 7 ns | 33ns | 10 ns | 27 ns | 6A | 12V | SILICON | SWITCHING | 600mV | 2.5W Tc | 6A | 24A | 0.045Ohm | 20V | N-Channel | 460pF @ 15V | 40m Ω @ 3A, 4.5V | 600mV @ 250μA | 6A Tc | 11.5nC @ 4.5V | 1.95V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||
| IRFB20N50KPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfb20n50kpbf-datasheets-5495.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 11 Weeks | 6.000006g | Unknown | 210mOhm | 3 | No | 1 | Single | 280W | 1 | TO-220AB | 2.87nF | 22 ns | 74ns | 33 ns | 45 ns | 20A | 30V | 500V | 5V | 280W Tc | 250mOhm | 500V | N-Channel | 2870pF @ 25V | 250mOhm @ 12A, 10V | 5V @ 250μA | 20A Tc | 110nC @ 10V | 250 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| DMT6005LPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmt6005lps13-datasheets-5233.pdf | 8-PowerTDFN | 22 Weeks | 8 | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 100A | 60V | 2.6W Ta 125W Tc | N-Channel | 2962pF @ 30V | 4.9m Ω @ 50A, 10V | 3V @ 250μA | 17.9A Ta 100A Tc | 47.1nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8409DB-T1-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si8409dbt1e1-datasheets-5250.pdf | 4-XFBGA, CSPBGA | 1.6mm | 360μm | 1.6mm | Lead Free | 4 | 33 Weeks | 46MOhm | 4 | yes | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | BALL | 260 | 4 | 1 | 40 | 1.47W | 1 | Other Transistors | 20 ns | 35ns | 35 ns | 140 ns | -6.3A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 1.47W Ta | -30V | P-Channel | 46m Ω @ 1A, 4.5V | 1.4V @ 250μA | 4.6A Ta | 26nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||
| PSMN8R2-80YS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/nexperiausainc-psmn8r280ys115-datasheets-5172.pdf&product=nexperiausainc-psmn8r280ys115-6828499 | SC-100, SOT-669 | 6.35mm | 6.35mm | 6.35mm | Lead Free | 4 | 12 Weeks | 453.59237mg | 4 | No | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 4 | 130W | 1 | 25 ns | 22ns | 16 ns | 51 ns | 82A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 130W Tc | MO-235 | 326A | 0.0085Ohm | 80V | N-Channel | 3640pF @ 40V | 8.5m Ω @ 15A, 10V | 4V @ 1mA | 82A Tc | 55nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRL60B216 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | Lead Free | 3 | 12 Weeks | Unknown | 3 | EAR99 | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 70 ns | 190 ns | 195A | 20V | SILICON | SWITCHING | 60V | 60V | 2.4V | 375W Tc | TO-220AB | 780A | 0.0019Ohm | 1045 mJ | N-Channel | 15570pF @ 25V | 1.9m Ω @ 100A, 10V | 2.4V @ 250μA | 195A Tc | 258nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP083N15A-F102 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdp083n15af102-datasheets-5278.pdf | TO-220-3 | 9 Weeks | ACTIVE (Last Updated: 2 days ago) | yes | NO | FET General Purpose Power | Single | 150V | 294W Tc | 105A | N-Channel | 6040pF @ 25V | 8.3m Ω @ 75A, 10V | 4V @ 250μA | 83A Tc | 84nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS98DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-siss98dnt1ge3-datasheets-4984.pdf | PowerPAK® 1212-8 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 200V | 57W Tc | N-Channel | 608pF @ 100V | 105m Ω @ 7A, 10V | 4V @ 250μA | 14.1A Tc | 14nC @ 7.5V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9230-100B,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~185°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-buk9230100b118-datasheets-5105.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 26 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE. | Tin | No | 8541.29.00.75 | e3 | YES | GULL WING | 3 | Single | 167W | 1 | R-PSSO-G2 | 30 ns | 86ns | 46 ns | 96 ns | 47A | 15V | 100V | SILICON | DRAIN | SWITCHING | 167W Tc | TO-252AA | 185A | 150 mJ | 100V | N-Channel | 3805pF @ 25V | 28m Ω @ 25A, 10V | 2V @ 1mA | 47A Tc | 33nC @ 5V | 5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||
| SQJA82EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqja82ept1ge3-datasheets-5098.pdf | PowerPAK® SO-8 | 4 | 14 Weeks | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 80V | 80V | 68W Tc | 60A | 120A | 0.0082Ohm | 62 mJ | N-Channel | 3000pF @ 25V | 8.2m Ω @ 10A, 10V | 2.5V @ 250μA | 60A Tc | 60nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC076N06NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/infineontechnologies-bsc076n06ns3gatma1-datasheets-4975.pdf | 8-PowerTDFN | Contains Lead | 26 Weeks | 8 | Halogen Free | 2.5W | 1 | PG-TDSON-8-5 | 4nF | 15 ns | 40ns | 5 ns | 20 ns | 50A | 20V | 60V | 60V | 2.5W Ta 69W Tc | 6.2mOhm | N-Channel | 4000pF @ 30V | 7.6mOhm @ 50A, 10V | 4V @ 35μA | 50A Tc | 50nC @ 10V | 7.6 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9N20DTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr9n20dtrpbf-datasheets-5135.pdf | 200V | 9.4A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | 2 | 14 Weeks | No SVHC | 380mOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 86W | 1 | R-PSSO-G2 | 7.5 ns | 16ns | 9.3 ns | 13 ns | 9.4A | 30V | 200V | SILICON | DRAIN | SWITCHING | 5.5V | 86W Tc | TO-252AA | 200V | N-Channel | 560pF @ 25V | 5.5 V | 380m Ω @ 5.6A, 10V | 5.5V @ 250μA | 9.4A Tc | 27nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| BUK7227-100B,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~185°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-buk7227100b118-datasheets-5127.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 26 Weeks | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 167W Tc | TO-252AA | 48A | 196A | 0.027Ohm | 145 mJ | N-Channel | 2789pF @ 25V | 27m Ω @ 25A, 10V | 4V @ 1mA | 48A Tc | 37nC @ 10V | 10V | ±20V |
