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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Length | Height | Width | Color | Lead Free | Material | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Wire Gauge (Max) | Wire Gauge (Min) | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Plating | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STL8P4LLF6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ F6 | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stl8p4llf6-datasheets-6679.pdf | 8-PowerVDFN | 5 | 20 Weeks | 8 | ACTIVE (Last Updated: 7 months ago) | EAR99 | DUAL | FLAT | NOT SPECIFIED | STL8 | NOT SPECIFIED | 1 | Other Transistors | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 2.9W Ta | 8A | 32A | 0.029Ohm | P-Channel | 2850pF @ 25V | 20.5m Ω @ 4A, 10V | 2.5V @ 250μA | 22nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN1R0-30YLDX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-psmn1r030yldx-datasheets-6734.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | HIGH RELIABILITY | Tin | No | YES | GULL WING | 4 | 1 | Single | 1 | 32.4 ns | 44.4ns | 31.7 ns | 43 ns | 100A | 20V | 30V | SILICON | DRAIN | SWITCHING | 238W Tc | MO-235 | 30V | N-Channel | 8598pF @ 15V | 1.02m Ω @ 25A, 10V | 2.2V @ 2mA | 100A Tc | 121.35nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7143DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si7143dpt1ge3-datasheets-6748.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 10MOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 4.2W | 1 | Other Transistors | R-XDSO-C5 | 16.1A | 20V | SILICON | DRAIN | SWITCHING | 30V | 4.2W Ta 35.7W Tc | 35A | 60A | -30V | P-Channel | 2230pF @ 15V | -1.2 V | 10m Ω @ 16.1A, 10V | 2.8V @ 250μA | 35A Tc | 71nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| BUK7Y7R8-80EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk7y7r880ex-datasheets-6752.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | AVALANCHE RATED | YES | SINGLE | GULL WING | 4 | 1 | 238W | 1 | 16 ns | 25ns | 24 ns | 43 ns | 100A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 238W Tc | MO-235 | 0.0078Ohm | 80V | N-Channel | 5347pF @ 25V | 7.8m Ω @ 25A, 10V | 4V @ 1mA | 100A Tc | 63.3nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ075N08NS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsz075n08ns5atma1-datasheets-6726.pdf | 8-PowerTDFN | Contains Lead | 3 | 18 Weeks | 8 | yes | EAR99 | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | Single | NOT SPECIFIED | 69W | 1 | S-PDSO-N3 | 10 ns | 4ns | 4 ns | 19 ns | 40A | 20V | 80V | SILICON | DRAIN | SWITCHING | 69W Tc | 0.0075Ohm | N-Channel | 2080pF @ 40V | 7.5m Ω @ 20A, 10V | 3.8V @ 36μA | 40A Tc | 29.5nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDD8647L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdd8647l-datasheets-6706.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 260.37mg | No SVHC | 13MOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 3.1W | 1 | FET General Purpose Power | R-PSSO-G2 | 8 ns | 3ns | 2 ns | 19 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 2V | 3.1W Ta 43W Tc | 52A | 40V | N-Channel | 1640pF @ 20V | 9m Ω @ 13A, 10V | 3V @ 250μA | 14A Ta 42A Tc | 28nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SIR418DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sir418dpt1ge3-datasheets-6744.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 5W | 1 | FET General Purpose Power | R-PDSO-C5 | 19 ns | 73ns | 12 ns | 32 ns | 40A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.4V | 39W Tc | 23.5A | 70A | 0.005Ohm | 45 mJ | 40V | N-Channel | 2410pF @ 20V | 2.4 V | 5m Ω @ 20A, 10V | 2.4V @ 250μA | 40A Tc | 75nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPD50P03P4L11ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipd50p03p4l11atma1-datasheets-6549.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 26 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 58W Tc | 50A | 200A | 0.0105Ohm | 100 mJ | P-Channel | 3770pF @ 25V | 10.5m Ω @ 50A, 10V | 2V @ 85μA | 50A Tc | 55nC @ 10V | 4.5V 10V | +5V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN012-100YS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-psmn012100ys115-datasheets-6175.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 4 | 1 | 60A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 130W Tc | MO-235 | 0.012Ohm | 170 mJ | N-Channel | 3500pF @ 50V | 12m Ω @ 15A, 10V | 4V @ 1mA | 60A Tc | 64nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7101DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7101dnt1ge3-datasheets-6261.pdf | PowerPAK® 1212-8 | 1.12mm | Lead Free | 5 | 14 Weeks | No SVHC | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 1 | 30 | 3.7W | 1 | 150°C | S-PDSO-C5 | 12 ns | 10ns | 8 ns | 38 ns | -16.9A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | -1.2V | 3.7W Ta 52W Tc | 35A | 0.0072Ohm | 20 mJ | -30V | P-Channel | 3595pF @ 15V | 7.2m Ω @ 15A, 10V | 2.5V @ 250μA | 35A Tc | 102nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||
| FDMC8651 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdmc8651-datasheets-6272.pdf | 8-PowerTDFN | 3.3mm | 1.05mm | 3.3mm | Lead Free | 5 | 34 Weeks | 32.13mg | No SVHC | 6.1MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | e4 | Nickel/Palladium (Ni/Pd) | DUAL | NO LEAD | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 2.3W | 1 | FET General Purpose Power | Not Qualified | 150°C | S-PDSO-N5 | 18 ns | 9ns | 6 ns | 35 ns | 15A | 12V | SILICON | DRAIN | SWITCHING | 800mV | 2.3W Ta 41W Tc | 64A | 60A | 30V | N-Channel | 3365pF @ 15V | 1.1 V | 6.1m Ω @ 15A, 4.5V | 1.5V @ 250μA | 15A Ta 20A Tc | 27.2nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||
| IRFR7440TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr7440trpbf-datasheets-6297.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.52mm | Lead Free | 2 | 15 Weeks | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 1 | 140W | 1 | FET General Purpose Power | 175°C | R-PSSO-G2 | 11 ns | 39ns | 34 ns | 51 ns | 180A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3V | 140W Tc | TO-252AA | 90A | 760A | 0.0024Ohm | 40V | N-Channel | 4610pF @ 25V | 3 V | 2.4m Ω @ 90A, 10V | 3.9V @ 100μA | 90A Tc | 134nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| DN3535N8-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/microchiptechnology-dn3535n8g-datasheets-6265.pdf | TO-243AA | 4.6mm | 1.6mm | 2.6mm | Lead Free | 3 | 18 Weeks | 52.786812mg | No SVHC | 3 | EAR99 | HIGH INPUT IMPEDANCE | Tin | No | e3 | FLAT | 260 | 1 | Single | 40 | 1.6W | 1 | 15 ns | 20ns | 20 ns | 20 ns | 230mA | 20V | SILICON | DRAIN | SWITCHING | 1.6W Ta | 0.5A | 350V | N-Channel | 360pF @ 25V | 10 Ω @ 150mA, 0V | 230mA Tj | Depletion Mode | 0V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF7815TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irf7815trpbf-datasheets-6277.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | 43MOhm | 8 | EAR99 | No | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 8.4 ns | 3.2ns | 8.3 ns | 14 ns | 5.1A | 20V | SILICON | SWITCHING | 2.5W Ta | 529 mJ | 150V | N-Channel | 1647pF @ 75V | 43m Ω @ 3.1A, 10V | 5V @ 100μA | 5.1A Ta | 38nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| CSD17308Q3T | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 3.3mm | 3.3mm | Contains Lead | 5 | 6 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 3 days ago) | yes | 1mm | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | DUAL | NO LEAD | CSD17308 | Single | 1 | 44A | SILICON | DRAIN | SWITCHING | 30V | 30V | 1.3V | 2.7W Ta 28W Tc | 14A | 167A | 0.0165Ohm | 35 pF | 65 mJ | N-Channel | 700pF @ 15V | 10.3m Ω @ 10A, 8V | 1.8V @ 250μA | 14A Ta 44A Tc | 5.1nC @ 4.5V | 3V 8V | +10V, -8V | |||||||||||||||||||||||||||||||||||||||||||
| STD26NF10 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std26nf10-datasheets-6420.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 38MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STD26N | 3 | Single | 30 | 100W | 1 | FET General Purpose Power | R-PSSO-G2 | 17 ns | 60ns | 15 ns | 60 ns | 25A | 20V | SILICON | DRAIN | SWITCHING | 100W Tc | 480 mJ | 100V | N-Channel | 1550pF @ 25V | 38m Ω @ 12.5A, 10V | 4V @ 250μA | 25A Tc | 55nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SI7315DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7315dnt1ge3-datasheets-6383.pdf | PowerPAK® 1212-8 | 5 | 14 Weeks | Unknown | 8 | EAR99 | Tin | e3 | DUAL | C BEND | NOT SPECIFIED | NOT SPECIFIED | 3.8W | 1 | S-PDSO-C5 | 8 ns | 9ns | 8 ns | 23 ns | -8.9A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 3.8W Ta 52W Tc | -150V | P-Channel | 880pF @ 75V | 315m Ω @ 2.4A, 10V | 4V @ 250μA | 8.9A Tc | 30nC @ 10V | 7.5V 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDD86113LZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdd86113lz-datasheets-6477.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 4 Weeks | 260.37mg | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 3.1W | 1 | FET General Purpose Power | R-PSSO-G2 | 3.6 ns | 1.3ns | 1.6 ns | 9.7 ns | 4.2A | 20V | SILICON | DRAIN | SWITCHING | 3.1W Ta 29W Tc | 5.5A | 100V | N-Channel | 285pF @ 50V | 104m Ω @ 4.2A, 10V | 3V @ 250μA | 4.2A Ta 5.5A Tc | 6nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| PSMN011-80YS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-psmn01180ys115-datasheets-5542.pdf | SC-100, SOT-669 | Lead Free | 4 | 12 Weeks | 18MOhm | 4 | No | e3 | Tin (Sn) | YES | GULL WING | 4 | Single | 117W | 1 | 23 ns | 20ns | 12 ns | 40 ns | 67A | 20V | 80V | SILICON | DRAIN | SWITCHING | 117W Tc | MO-235 | 266A | 121 mJ | 80V | N-Channel | 2800pF @ 40V | 11m Ω @ 25A, 10V | 4V @ 1mA | 67A Tc | 45nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R600C6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C6 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd60r600c6atma1-datasheets-6539.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 12 Weeks | 3.949996g | 3 | not_compliant | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 63W | 1 | R-PSSO-G2 | 12 ns | 9ns | 13 ns | 80 ns | 7.3A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 63W Tc | 0.6Ohm | N-Channel | 440pF @ 100V | 600m Ω @ 2.4A, 10V | 3.5V @ 200μA | 7.3A Tc | 20.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| STS8N6LF6AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ F6 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sts8n6lf6ag-datasheets-5597.pdf | 8-SOIC (0.154, 3.90mm Width) | 20 Weeks | ACTIVE (Last Updated: 7 months ago) | STS8N | 60V | 3.2W Ta | N-Channel | 1340pF @ 25V | 24m Ω @ 4A, 10V | 2.5V @ 250μA | 8A Ta | 27nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS6575 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fds6575-datasheets-6574.pdf | -20V | -10A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 18 Weeks | 130mg | No SVHC | 13MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | Single | 2.5W | 1 | Other Transistors | 16 ns | 9ns | 78 ns | 196 ns | 10A | 8V | SILICON | SWITCHING | 20V | 2.5W Ta | -20V | P-Channel | 4951pF @ 10V | -600 mV | 13m Ω @ 10A, 4.5V | 1.5V @ 250μA | 10A Ta | 74nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||
| TN2106N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-tn2106k1g-datasheets-0026.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 6 Weeks | 453.59237mg | 3 | EAR99 | e3 | Matte Tin (Sn) | BOTTOM | NOT APPLICABLE | 1 | Single | NOT APPLICABLE | 740mW | 1 | FET General Purpose Power | Not Qualified | 3 ns | 5ns | 5 ns | 6 ns | 300mA | 20V | SILICON | SWITCHING | 740mW Tc | 65 pF | 60V | N-Channel | 50pF @ 25V | 2.5 Ω @ 500mA, 10V | 2V @ 1mA | 300mA Tj | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| PSMN059-150Y,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-psmn059150y115-datasheets-5952.pdf | SC-100, SOT-669 | Lead Free | 4 | 12 Weeks | 59MOhm | 4 | EAR99 | No | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 260 | 4 | 30 | 113W | 1 | 14.2 ns | 42ns | 11.1 ns | 54.2 ns | 43A | 20V | 150V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 113W Tc | MO-235 | 255 mJ | 150V | N-Channel | 1529pF @ 30V | 59m Ω @ 12A, 10V | 4V @ 1mA | 43A Tc | 27.9nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SIRA58DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sira58dpt1ge3-datasheets-5974.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 60A | 40V | 27.7W Tc | N-Channel | 3750pF @ 20V | 2.65m Ω @ 15A, 10V | 2.4V @ 250μA | 60A Tc | 75nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL70N4LLF5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ V | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stl70n4llf5-datasheets-5990.pdf | 8-PowerVDFN | Lead Free | 5 | 14 Weeks | 6.5mOhm | 8 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | STL70 | 8 | 30 | 60W | 1 | FET General Purpose Power | R-XDSO-F5 | 14 ns | 42ns | 5.2 ns | 37 ns | 70A | 22V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 72W Tc | 72A | 40V | N-Channel | 1800pF @ 25V | 6.5m Ω @ 9A, 10V | 1V @ 250μA | 70A Tc | 13nC @ 4.5V | 4.5V 10V | ±22V | |||||||||||||||||||||||||||||||||||||||||
| IPD30N06S2L23ATMA3 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipd30n06s2l23atma3-datasheets-6002.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 10 Weeks | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 30A | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100W Tc | 120A | 150 mJ | N-Channel | 1091pF @ 25V | 23m Ω @ 22A, 10V | 2V @ 50μA | 30A Tc | 42nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPD95R2K0P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd95r2k0p7atma1-datasheets-5998.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 950V | 37W Tc | N-Channel | 330pF @ 400V | 2 Ω @ 1.7A, 10V | 3.5V @ 80μA | 4A Tc | 10nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6268 | Alpha & Omega Semiconductor Inc. | $2.52 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaSGT™ | Surface Mount | -55°C~150°C TA | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aon6268-datasheets-6070.pdf | 8-PowerSMD, Flat Leads | 18 Weeks | 60V | 56W Tc | N-Channel | 2520pF @ 30V | 4.7m Ω @ 20A, 10V | 2.3V @ 250μA | 44A Tc | 65nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7Y6R0-60EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Crimp | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk7y6r060ex-datasheets-6086.pdf | 22.225mm | SC-100, SOT-669 | 15.875mm | Black | Lead Free | Brass, Metal, Plastic | 4 | 12 Weeks | 4 | AVALANCHE RATED | YES | GULL WING | 4 | Single | 195W | 1 | 12 ns | 19ns | 21 ns | 36 ns | 100A | 20V | 60V | DRAIN | SWITCHING | 24 AWG | 20 AWG | 195W Tc | MO-235 | Tin | 0.006Ohm | N-Channel | 4021pF @ 25V | 6m Ω @ 25A, 10V | 4V @ 1mA | 100A Tc | 45.4nC @ 10V | 10V | ±20V |
