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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| ZVNL110A | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zvnl110astz-datasheets-8706.pdf | 100V | 320mA | TO-226-3, TO-92-3 (TO-226AA) | 4.77mm | 4.01mm | 2.41mm | Lead Free | 3 | 17 Weeks | 453.59237mg | No SVHC | 3 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | BOTTOM | WIRE | 260 | 3 | 1 | Single | 40 | 700mW | 1 | FET General Purpose Powers | 7 ns | 12ns | 12 ns | 15 ns | 320mA | 20V | SILICON | 700mW Ta | 3Ohm | 8 pF | 100V | N-Channel | 75pF @ 25V | 3 Ω @ 500mA, 10V | 1.5V @ 1mA | 320mA Ta | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FQU13N10LTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqd13n10ltm-datasheets-4602.pdf&product=onsemiconductor-fqu13n10ltu-6829025 | 100V | 10A | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.1mm | 2.3mm | Lead Free | 3 | 5 Weeks | 343.08mg | No SVHC | 180MOhm | 3 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 2.5W | 1 | FET General Purpose Power | 7.5 ns | 220ns | 72 ns | 22 ns | 10A | 20V | SILICON | SWITCHING | 2V | 2.5W Ta 40W Tc | 40A | 95 mJ | 100V | N-Channel | 520pF @ 25V | 180m Ω @ 5A, 10V | 2V @ 250μA | 10A Tc | 12nC @ 5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SIR800DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-sir800dpt1ge3-datasheets-8428.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5.2W | 1 | FET General Purpose Power | R-XDSO-C5 | 27 ns | 15ns | 27 ns | 70 ns | 50A | 12V | SILICON | DRAIN | 600mV | 5.2W Ta 69W Tc | 35.4A | 0.0023Ohm | 45 mJ | 20V | N-Channel | 5125pF @ 10V | 600 mV | 2.3m Ω @ 15A, 10V | 1.5V @ 250μA | 50A Tc | 133nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||
| STD13N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std13n60dm2-datasheets-8537.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | STD13 | 600V | 110W Tc | N-Channel | 730pF @ 100V | 365m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 19nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD4N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std4n80k5-datasheets-8540.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | 17 Weeks | 2.5Ohm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | Tin | No | GULL WING | STD4N | 1 | Single | 60W | 1 | R-PSSO-G2 | 16.5 ns | 15ns | 21 ns | 36 ns | 3A | 30V | SILICON | DRAIN | SWITCHING | 60W Tc | 3A | 74.5 mJ | 800V | N-Channel | 175pF @ 100V | 2.5 Ω @ 1.5A, 10V | 5V @ 100μA | 3A Tc | 10.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDMS86102LZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdms86102lz-datasheets-8556.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Lead Free | 5 | 8 Weeks | 74mg | No SVHC | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | DUAL | FLAT | Single | 69W | 1 | FET General Purpose Power | R-PDSO-F5 | 6.7 ns | 2.6ns | 2.5 ns | 19 ns | 7A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 69W Tc | MO-240AA | 7A | 40A | 0.025Ohm | 100V | N-Channel | 1305pF @ 50V | 1.5 V | 25m Ω @ 7A, 10V | 2.5V @ 250μA | 7A Ta 22A Tc | 22nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRF6623TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irf6623trpbf-datasheets-8564.pdf | 20V | 16A | DirectFET™ Isometric ST | 4.826mm | 506μm | 3.95mm | Lead Free | 3 | 12 Weeks | No SVHC | 5.7MOhm | 5 | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 42W | 1 | FET General Purpose Power | R-XBCC-N3 | 9.7 ns | 40ns | 4.5 ns | 12 ns | 55mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.2V | 1.4W Ta 42W Tc | 43 mJ | 20V | N-Channel | 1360pF @ 10V | 2.2 V | 5.7m Ω @ 15A, 10V | 2.2V @ 250μA | 16A Ta 55A Tc | 17nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FQU11P06TU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-fqd11p06tm-datasheets-4328.pdf | -60V | -9.4A | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.1mm | 2.3mm | Lead Free | 3 | 4 Weeks | 343.08mg | No SVHC | 3 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 2.5W | 1 | Other Transistors | 6.5 ns | 40ns | 45 ns | 15 ns | -9.4A | 30V | SILICON | SWITCHING | 60V | -4V | 2.5W Ta 38W Tc | 83 ns | -60V | P-Channel | 550pF @ 25V | 185m Ω @ 4.7A, 10V | 4V @ 250μA | 9.4A Tc | 17nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IPB054N08N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb054n08n3gatma1-datasheets-8513.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 13 Weeks | No SVHC | 3 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 150W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 18 ns | 66ns | 10 ns | 38 ns | 80A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.8V | 150W Tc | 0.0054Ohm | N-Channel | 4750pF @ 40V | 5.4m Ω @ 80A, 10V | 3.5V @ 90μA | 80A Tc | 69nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF610PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | /files/vishaysiliconix-irf610pbf-datasheets-8599.pdf | 200V | 3.3A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 1.5Ohm | 3 | No | 200V | 1 | Single | 36W | 1 | TO-220AB | 140pF | 8.2 ns | 17ns | 8.9 ns | 14 ns | 3.3A | 20V | 200V | 4V | 36W Tc | 310 ns | 1.5Ohm | 200V | N-Channel | 140pF @ 25V | 4 V | 1.5Ohm @ 2A, 10V | 4V @ 250μA | 3.3A Tc | 8.2nC @ 10V | 1.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FDWS86368-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerTDFN | 4 Weeks | 172.8mg | 8 | ACTIVE (Last Updated: 2 days ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 80A | 80V | 214W Tj | N-Channel | 4350pF @ 40V | 4.5m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 75nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN022-30PL,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/nexperiausainc-psmn02230pl127-datasheets-8620.pdf | TO-220-3 | 6.35mm | 6.35mm | 6.35mm | Lead Free | 12 Weeks | 453.59237mg | 22MOhm | 3 | No | Single | 41W | 1 | TO-220AB | 447pF | 12 ns | 29ns | 7 ns | 17 ns | 30A | 20V | 30V | 30V | 41W Tc | 22mOhm | 30V | N-Channel | 447pF @ 15V | 22mOhm @ 5A, 10V | 2.15V @ 1mA | 30A Tc | 9nC @ 10V | 22 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC100N04S51R7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/infineontechnologies-ipc100n04s51r7atma1-datasheets-8452.pdf | 8-PowerTDFN | 3 | 16 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 115W Tc | 100A | 400A | 0.002Ohm | 220 mJ | N-Channel | 4810pF @ 25V | 1.7m Ω @ 50A, 10V | 3.4V @ 60μA | 100A Tc | 83nC @ 10V | 7V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD16403Q5A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 1.1mm | 6mm | Contains Lead | 5 | 16 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 1 day ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | No | e3 | DUAL | 260 | CSD16403 | 8 | Single | 3.1W | 1 | FET General Purpose Power | 11.8 ns | 18.3ns | 9.2 ns | 15.2 ns | 100A | 16V | 25V | SILICON | DRAIN | SWITCHING | 1.6V | 3.1W Ta | 0.0037Ohm | 224 mJ | 25V | N-Channel | 2660pF @ 12.5V | 1.6 V | 2.8m Ω @ 20A, 10V | 1.9V @ 250μA | 28A Ta 100A Tc | 18nC @ 4.5V | 4.5V 10V | +16V, -12V | ||||||||||||||||||||||||||||||||||||||
| TK33S10N1Z,LQ | Toshiba Semiconductor and Storage | $1.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3.949996g | 1 | Single | DPAK+ | 2.05nF | 33A | 10V | 100V | 125W Tc | 9.7mOhm | 100V | N-Channel | 2050pF @ 10V | 9.7mOhm @ 16.5A, 10V | 4V @ 500μA | 33A Ta | 28nC @ 10V | 9.7 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2214 | EPC | $1.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/epc-epc2214-datasheets-8275.pdf | Die | 14 Weeks | Die | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4850EY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4850eyt1e3-datasheets-8689.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 3.3W | 1 | FET General Purpose Powers | 10 ns | 10ns | 12 ns | 25 ns | 6A | 20V | SILICON | SWITCHING | 3V | 1.7W Ta | 6A | 0.022Ohm | 60V | N-Channel | 3 V | 22m Ω @ 6A, 10V | 3V @ 250μA | 6A Ta | 27nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRFR4510TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr4510trpbf-datasheets-8155.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 12 Weeks | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 143W | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 34 ns | 42 ns | 56A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 3V | 143W Tc | TO-252AA | 252A | N-Channel | 3031pF @ 50V | 3 V | 13.9m Ω @ 38A, 10V | 4V @ 100μA | 56A Tc | 81nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| CSD17573Q5B | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Contains Lead | 5 | 6 Weeks | 8 | ACTIVE (Last Updated: 5 days ago) | yes | 950μm | EAR99 | AVALANCHE RATED | Gold | not_compliant | e4 | DUAL | NO LEAD | 260 | CSD17573 | 1 | Single | NOT SPECIFIED | 3.2W | 1 | 150°C | 6 ns | 20ns | 7 ns | 40 ns | 43A | 20V | SILICON | DRAIN | SWITCHING | 3.2W Ta 195W Tc | 400A | 390 pF | 30V | N-Channel | 9000pF @ 15V | 1m Ω @ 35A, 10V | 1.8V @ 250μA | 100A Ta | 64nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SQD40N06-14L_GE3 | Vishay Siliconix | $1.62 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd40n0614lge3-datasheets-8291.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 60V | 75W Tc | N-Channel | 2105pF @ 25V | 14mOhm @ 20A, 10V | 2.5V @ 250μA | 40A Tc | 51nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH7004TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-irfh7004trpbf-datasheets-8205.pdf | 8-VQFN Exposed Pad | 6mm | 850μm | 5mm | Lead Free | 5 | 12 Weeks | No SVHC | 5 | EAR99 | No | DUAL | Single | 156W | 1 | FET General Purpose Power | 15 ns | 51ns | 49 ns | 73 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 40V | 40V | 3V | 156W Tc | N-Channel | 6419pF @ 25V | 3 V | 1.4m Ω @ 100A, 10V | 3.9V @ 150μA | 100A Tc | 194nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| CSD17576Q5B | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 5mm | 6mm | Contains Lead | 5 | 8 Weeks | 8 | ACTIVE (Last Updated: 5 days ago) | yes | 950μm | EAR99 | AVALANCHE RATED | Gold | not_compliant | e4 | DUAL | NO LEAD | 260 | CSD17576 | Single | NOT SPECIFIED | 3.1W | 1 | 5 ns | 16ns | 3 ns | 23 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 3.1W Ta 125W Tc | 30A | 400A | 0.0029Ohm | N-Channel | 4430pF @ 15V | 2m Ω @ 25A, 10V | 1.8V @ 250μA | 100A Ta | 68nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFH6200TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfh6200trpbf-datasheets-8185.pdf | 8-PowerVDFN | 5.9944mm | 838.2μm | 5mm | Lead Free | 5 | 12 Weeks | No SVHC | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 30 | 156W | 1 | FET General Purpose Power | R-PDSO-N5 | 14 ns | 74ns | 160 ns | 140 ns | 100A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800mV | 3.6W Ta 156W Tc | 45A | 400A | 20V | N-Channel | 10890pF @ 10V | 0.95m Ω @ 50A, 10V | 1.1V @ 150μA | 49A Ta 100A Tc | 230nC @ 4.5V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||
| SIR414DP-T1-GE3 | Vishay Siliconix | $3.46 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir414dpt1ge3-datasheets-8405.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 2.8mOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 8 | 1 | 5.4W | 1 | R-PDSO-F5 | 33 ns | 22ns | 13 ns | 42 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 1V | 5.4W Ta 83W Tc | 33A | 70A | N-Channel | 4750pF @ 20V | 90ns | 77ns | 1 V | 2.8m Ω @ 20A, 10V | 2.5V @ 250μA | 50A Tc | 117nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| ZVN3306A | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zvn3306a-datasheets-8415.pdf | 60V | 270mA | TO-226-3, TO-92-3 (TO-226AA) | 4.77mm | 4.01mm | 2.41mm | Lead Free | 3 | 17 Weeks | 453.59237mg | No SVHC | 5Ohm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | WIRE | 260 | 3 | 1 | Single | 40 | 625mW | 1 | FET General Purpose Power | 5 ns | 7ns | 7 ns | 6 ns | 270mA | 20V | SILICON | 2.4V | 625mW Ta | 0.27A | 8 pF | 60V | N-Channel | 35pF @ 18V | 5 Ω @ 500mA, 10V | 2.4V @ 1mA | 270mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| NDS8434 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-nds8434-datasheets-8420.pdf | -20V | -6.7A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 Weeks | 230.4mg | No SVHC | 35mOhm | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | GULL WING | Single | 2.5W | 1 | Other Transistors | 20 ns | 38ns | 63 ns | 169 ns | 6.5A | 8V | SILICON | SWITCHING | 20V | -700mV | 2.5W Ta | -20V | P-Channel | 2330pF @ 10V | 35m Ω @ 6.5A, 4.5V | 1V @ 250μA | 6.5A Ta | 80nC @ 4.5V | 2.7V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDS2670 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fds2670-datasheets-8398.pdf | 200V | 3A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 6 Weeks | 130mg | 130MOhm | 8 | ACTIVE (Last Updated: 23 hours ago) | yes | EAR99 | e3 | Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 2.5W | 1 | FET General Purpose Power | Not Qualified | 13 ns | 8ns | 25 ns | 30 ns | 3A | 20V | SILICON | SWITCHING | 2.5W Ta | 3A | 200V | N-Channel | 1228pF @ 100V | 130m Ω @ 3A, 10V | 4.5V @ 250μA | 3A Ta | 43nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| STD3N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std3n80k5-datasheets-8152.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | 17 Weeks | 3.949996g | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | Tin | No | GULL WING | STD3N | Single | 110W | 1 | R-PSSO-G2 | 8.5 ns | 7.5ns | 25 ns | 20.5 ns | 2.5A | 30V | SILICON | DRAIN | SWITCHING | 60W Tc | 65 mJ | 800V | N-Channel | 130pF @ 100V | 3.5 Ω @ 1A, 10V | 5V @ 100μA | 2.5A Tc | 9.5nC @ 10V | 10V | |||||||||||||||||||||||||||||||||||||||||||||||||
| ATP114-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-atp114tlh-datasheets-7960.pdf | ATPAK (2 leads+tab) | Lead Free | 2 | 16 Weeks | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | Halogen Free | YES | GULL WING | 3 | Single | 60W | 1 | Other Transistors | R-PSSO-G2 | 19 ns | 200ns | 300 ns | 450 ns | 55A | 20V | SILICON | DRAIN | 60W Tc | 60V | P-Channel | 4000pF @ 20V | 16m Ω @ 28A, 10V | 55A Ta | 92nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC061N08NS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc061n08ns5atma1-datasheets-8060.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 506.605978mg | 8 | yes | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PDSO-F5 | 11 ns | 6ns | 5 ns | 19 ns | 82A | 20V | 80V | SILICON | DRAIN | SWITCHING | 2.5W Ta 74W Tc | 50 mJ | N-Channel | 2500pF @ 40V | 6.1m Ω @ 41A, 10V | 3.8V @ 41μA | 82A Tc | 33nC @ 10V | 6V 10V | ±20V |
