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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Manufacturer Package Identifier | Lead Length | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFD220PBF | Vishay Siliconix | $2.78 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd220pbf-datasheets-0078.pdf | 4-DIP (0.300, 7.62mm) | 8 Weeks | 4-DIP, Hexdip, HVMDIP | 200V | 1W Ta | N-Channel | 260pF @ 25V | 800mOhm @ 480mA, 10V | 4V @ 250μA | 800mA Ta | 14nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS037N08B | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdms037n08b-datasheets-0091.pdf | 8-PowerTDFN | 5.1mm | 1.05mm | 6.25mm | 5 | 18 Weeks | 68.1mg | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | Single | NOT SPECIFIED | 830mW | 1 | FET General Purpose Power | R-PDSO-F5 | 34.9 ns | 55.3 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 830mW Ta 104.2W Tc | MO-240AA | 0.0037Ohm | 45 pF | 75V | N-Channel | 5915pF @ 37.5V | 3.7m Ω @ 50A, 10V | 4.5V @ 250μA | 100A Tc | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SFT1342-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/onsemiconductor-sft1342w-datasheets-0099.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 4 Weeks | 3 | ACTIVE (Last Updated: 1 day ago) | yes | Tin | not_compliant | 1 | 10 ns | 37ns | 75 ns | 135 ns | 12A | 20V | 60V | 1W Ta 15W Tc | P-Channel | 1150pF @ 20V | 62m Ω @ 6A, 10V | 12A Ta | 26nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD86110 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdd86110-datasheets-0113.pdf&product=onsemiconductor-fdd86110-6829274 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 260.37mg | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 3.1W | 1 | FET General Purpose Power | R-PSSO-G2 | 12 ns | 5.4ns | 3.9 ns | 19 ns | 12.5A | 20V | SILICON | DRAIN | SWITCHING | 2.8V | 3.1W Ta 127W Tc | 50A | 60A | 100V | N-Channel | 2265pF @ 50V | 2.8 V | 10.2m Ω @ 12.5A, 10V | 4V @ 250μA | 12.5A Ta 50A Tc | 35nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRL3705ZSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irl3705zpbf-datasheets-2074.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.699mm | 9.65mm | Lead Free | 2 | 12 Weeks | 8MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 130W | 1 | FET General Purpose Power | R-PSSO-G2 | 17 ns | 240ns | 83 ns | 26 ns | 86A | 16V | SILICON | DRAIN | SWITCHING | 130W Tc | 75A | 55V | N-Channel | 2880pF @ 25V | 8m Ω @ 52A, 10V | 3V @ 250μA | 75A Tc | 60nC @ 5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPD65R225C7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipd65r225c7atma1-datasheets-0133.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | 3 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 63W | 1 | R-PSSO-G2 | 9 ns | 6ns | 10 ns | 48 ns | 11A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 63W Tc | 0.225Ohm | 48 mJ | N-Channel | 996pF @ 400V | 225m Ω @ 4.8A, 10V | 4V @ 240μA | 11A Tc | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLU3410PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irlr3410trpbf-datasheets-2107.pdf | 100V | 17A | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.3876mm | Lead Free | 3 | 12 Weeks | No SVHC | 105mOhm | 3 | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | 260 | 30 | 52W | 1 | FET General Purpose Power | 7.2 ns | 53ns | 26 ns | 30 ns | 17A | 16V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2V | 79W Tc | 60A | 150 mJ | 100V | N-Channel | 800pF @ 25V | 2 V | 105m Ω @ 10A, 10V | 2V @ 250μA | 17A Tc | 34nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
| SIR680DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sir680dpt1re3-datasheets-0103.pdf | PowerPAK® SO-8 | 1.17mm | 5 | 14 Weeks | EAR99 | S17-0173-Single | unknown | YES | DUAL | NO LEAD | NOT SPECIFIED | 1 | NOT SPECIFIED | 6.25W | 1 | 150°C | R-PDSO-N5 | 16 ns | 30 ns | 32.8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 104W Tc | 200A | 0.0029Ohm | 80 mJ | 80V | N-Channel | 5150pF @ 40V | 2.9m Ω @ 20A, 10V | 3.4V @ 250μA | 100A Tc | 81nC @ 7.5V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6250 | Alpha & Omega Semiconductor Inc. | $1.12 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | 8-PowerSMD, Flat Leads | 18 Weeks | 8-DFN (5x6) | 2.388nF | 52A | 150V | 7.4W Ta 104W Tc | N-Channel | 2388pF @ 75V | 16.5mOhm @ 20A, 10V | 3.4V @ 250μA | 13.5A Ta 52A Tc | 43nC @ 10V | 16.5 mΩ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS7437TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-irfs7437trlpbf-datasheets-9988.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 12 Weeks | No SVHC | 1.8MOhm | 3 | EAR99 | No | GULL WING | Single | 230W | 1 | FET General Purpose Power | R-PSSO-G2 | 19 ns | 70ns | 53 ns | 78 ns | 195A | 20V | SILICON | DRAIN | SWITCHING | 3V | 230W Tc | 802 mJ | 40V | N-Channel | 7330pF @ 25V | 3 V | 1.8m Ω @ 100A, 10V | 3.9V @ 150μA | 195A Tc | 225nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC86570LET60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdmc86570let60-datasheets-9827.pdf | 8-PowerWDFN | 800μm | Lead Free | 10 Weeks | 152.7mg | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 260 | 1 | Single | NOT SPECIFIED | 2.8W | 175°C | 19 ns | 6.2ns | 3.9 ns | 38 ns | 18A | 20V | 2.8W Ta 65W Tc | 60V | N-Channel | 4790pF @ 30V | 4.3m Ω @ 18A, 10V | 3V @ 250μA | 18A Ta 87A Tc | 88nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9Z14PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | /files/vishaysiliconix-irf9z14pbf-datasheets-0020.pdf | -60V | -6.7A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 500mOhm | 3 | No | 1 | Single | 43W | 1 | TO-220AB | 270pF | 11 ns | 63ns | 31 ns | 10 ns | -6.7A | 20V | 60V | -4V | 43W Tc | 500mOhm | -60V | P-Channel | 270pF @ 25V | -2 V | 500mOhm @ 4A, 10V | 4V @ 250μA | 6.7A Tc | 12nC @ 10V | 500 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STD13N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb13n60m2-datasheets-1409.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | 16 Weeks | 380mOhm | 2 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | GULL WING | STD13 | Single | 110W | 1 | 11 ns | 10ns | 9.5 ns | 41 ns | 11A | 25V | SILICON | DRAIN | SWITCHING | 600V | 110W Tc | 44A | 650V | N-Channel | 580pF @ 100V | 380m Ω @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 17nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU5305PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr5305trpbf-datasheets-3036.pdf | -55V | -28A | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.1mm | 2.3mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 65mOhm | 3 | 2.28mm | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | 9.65mm | e3 | 260 | Single | 30 | 89W | 1 | Other Transistors | 14 ns | 66ns | 63 ns | 39 ns | -31A | 20V | SILICON | DRAIN | SWITCHING | 55V | -4V | 110W Tc | 25A | 280 mJ | -55V | P-Channel | 1200pF @ 25V | -4 V | 65m Ω @ 16A, 10V | 4V @ 250μA | 31A Tc | 63nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| NVMFS6H801NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | /files/onsemiconductor-nvmfs6h801nt1g-datasheets-9854.pdf | 8-PowerTDFN, 5 Leads | 5 Weeks | ACTIVE (Last Updated: 2 hours ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 80V | 3.8W Ta 166W Tc | N-Channel | 4120pF @ 40V | 2.8m Ω @ 50A, 10V | 4V @ 250μA | 23A Ta 157A Tc | 64nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9530NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irf9530npbf-datasheets-9857.pdf | -100V | -14A | TO-220-3 | 10.5156mm | 15.24mm | 4.69mm | Lead Free | 3 | 12 Weeks | No SVHC | 200mOhm | 3 | 2.54mm | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | e3 | 250 | Single | 30 | 79W | 1 | Other Transistors | 15 ns | 58ns | 46 ns | 45 ns | -14A | 20V | -100V | SILICON | DRAIN | SWITCHING | 100V | -4V | 79W Tc | TO-220AB | 190 ns | 56A | 250 mJ | -100V | P-Channel | 760pF @ 25V | -4 V | 200m Ω @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 58nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| RFP12N10L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-rfp12n10l-datasheets-9880.pdf | 100V | 12A | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | Lead Free | 3 | 9 Weeks | 4.535924g | No SVHC | 200mOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | 12A | e3 | Tin (Sn) | 100V | 1 | Single | 60W | 1 | FET General Purpose Power | 15 ns | 70ns | 80 ns | 100 ns | 12A | 10V | SILICON | DRAIN | SWITCHING | 2V | 60W Tc | TO-220AB | 100V | N-Channel | 900pF @ 25V | 200m Ω @ 12A, 5V | 2V @ 250μA | 12A Tc | 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||
| IRL530NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irl530npbf-datasheets-9897.pdf | 100V | 17A | TO-220-3 | 10.5156mm | 8.77mm | 4.69mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 100mOhm | 3 | 2.54mm | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY | No | e3 | MATTE TIN OVER NICKEL | 260 | Single | 30 | 79W | 1 | FET General Purpose Power | 7.2 ns | 53ns | 26 ns | 30 ns | 17A | 16V | 100V | SILICON | DRAIN | SWITCHING | 2V | 79W Tc | TO-220AB | 210 ns | 60A | 100V | N-Channel | 800pF @ 25V | 2 V | 100m Ω @ 9A, 10V | 2V @ 250μA | 17A Tc | 34nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
| SIR870ADP-T1-RE3 | Vishay Siliconix | $28.21 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishay-sir870adpt1re3-datasheets-3418.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 100V | 104W Tc | 5.5mOhm | N-Channel | 2866pF @ 50V | 6.6mOhm @ 20A, 10V | 3V @ 250μA | 60A Tc | 80nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIDR870ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sidr870adpt1ge3-datasheets-9417.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 100V | 125W Tc | N-Channel | 2866pF @ 50V | 6.6m Ω @ 20A, 10V | 3V @ 250μA | 95A Tc | 80nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU220NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/infineontechnologies-irfr220ntrpbf-datasheets-9596.pdf | 200V | 5A | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.3876mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 600Ohm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 43W | 1 | FET General Purpose Power | 6.4 ns | 11ns | 12 ns | 20 ns | 5A | 20V | 200V | SILICON | DRAIN | SWITCHING | 4V | 43W Tc | 140 ns | 5A | 20A | 46 mJ | 200V | N-Channel | 300pF @ 25V | 4 V | 600m Ω @ 2.9A, 10V | 4V @ 250μA | 5A Tc | 23nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPD90N10S4L06ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/infineontechnologies-ipd90n10s4l06atma1-datasheets-9907.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 14 Weeks | 3 | EAR99 | Halogen Free | NOT SPECIFIED | NOT SPECIFIED | 8 ns | 6ns | 40 ns | 42 ns | 90A | 16V | 100V | 136W Tc | N-Channel | 6250pF @ 25V | 6.6m Ω @ 90A, 10V | 2.1V @ 90μA | 90A Tc | 98nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD18563Q5AT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/texasinstruments-csd19502q5b-datasheets-1484.pdf | 8-PowerTDFN | 4.9mm | 1.1mm | 6mm | Contains Lead | 5 | 6 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 3 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | not_compliant | e3 | DUAL | NO LEAD | 260 | CSD18563 | 1 | Single | NOT SPECIFIED | 1 | 3.2 ns | 6.3ns | 1.7 ns | 11.4 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 2V | 3.2W Ta 116W Tc | 96A | N-Channel | 1500pF @ 30V | 6.8m Ω @ 18A, 10V | 2.4V @ 250μA | 100A Ta | 20nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BUK964R8-60E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-buk964r860e118-datasheets-9775.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | AVALANCHE RATED | Tin | not_compliant | e3 | YES | SINGLE | GULL WING | 3 | 1 | R-PSSO-G2 | 36 ns | 73ns | 68 ns | 78 ns | 100A | 10V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 234W Tc | 596A | 0.0048Ohm | N-Channel | 9710pF @ 25V | 4.4m Ω @ 25A, 10V | 2.1V @ 1mA | 100A Tc | 65nC @ 5V | 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ48NSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irfz48nstrlpbf-datasheets-8663.pdf | 55V | 64A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 14MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 130W | 1 | R-PSSO-G2 | 12 ns | 78ns | 50 ns | 34 ns | 64A | 20V | 55V | SILICON | DRAIN | SWITCHING | 4V | 3.8W Ta 130W Tc | 100 ns | 100 ns | 55V | N-Channel | 1970pF @ 25V | 4 V | 14m Ω @ 32A, 10V | 4V @ 250μA | 64A Tc | 81nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF520NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irf520npbf-datasheets-9792.pdf | 100V | 9.7A | TO-220-3 | 10.5156mm | 15.24mm | 4.69mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | 2.54mm | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | Single | 48W | 1 | FET General Purpose Power | 4.5 ns | 23ns | 23 ns | 32 ns | 9.7A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 48W Tc | TO-220AB | 150 ns | 9.5A | 0.2Ohm | 100V | N-Channel | 330pF @ 25V | 4 V | 200m Ω @ 5.7A, 10V | 4V @ 250μA | 9.7A Tc | 25nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRLI520NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irli520npbf-datasheets-9801.pdf | 100V | 8.1A | TO-220-3 Full Pack | 10.6172mm | 9.8mm | 4.826mm | Lead Free | 3 | 14 Weeks | No SVHC | 180MOhm | 3 | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NOT SPECIFIED | Single | NOT SPECIFIED | 27W | 1 | Not Qualified | 2kV | 40 ns | 35ns | 22 ns | 23 ns | 8.1A | 16V | 100V | SILICON | ISOLATED | SWITCHING | 2V | 30W Tc | TO-220AB | 85 mJ | 100V | N-Channel | 440pF @ 25V | 2 V | 180m Ω @ 6A, 10V | 2V @ 250μA | 8.1A Tc | 20nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||
| ZVP2110A | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zvp2110a-datasheets-9810.pdf | -100V | -230mA | TO-226-3, TO-92-3 (TO-226AA) | 4.77mm | 4.01mm | 2.41mm | Lead Free | 3 | 17 Weeks | 453.59237mg | No SVHC | 8Ohm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | CECC | BOTTOM | WIRE | 260 | 3 | 1 | Single | 40 | 700mW | 1 | Other Transistors | 7 ns | 15ns | 15 ns | 12 ns | 230mA | 20V | SILICON | SWITCHING | 100V | -3.5V | 700mW Ta | -100V | P-Channel | 100pF @ 25V | 8 Ω @ 375mA, 10V | 3.5V @ 1mA | 230mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF200B211 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irf200b211-datasheets-9820.pdf | TO-220-3 | Lead Free | 12 Weeks | 170mOhm | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 12A | 200V | 80W Tc | N-Channel | 790pF @ 50V | 170m Ω @ 7.2A, 10V | 4.9V @ 50μA | 12A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB11NK40ZT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb11nk40zt4-datasheets-9727.pdf | 400V | 9A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.75mm | 4.6mm | 10.4mm | Lead Free | 2 | 12 Weeks | No SVHC | 550mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB11N | 4 | Single | 30 | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 20 ns | 20ns | 18 ns | 40 ns | 4.5A | 30V | SILICON | SWITCHING | 3.75V | 110W Tc | 9A | 400V | N-Channel | 930pF @ 25V | 550m Ω @ 4.5A, 10V | 4.5V @ 100μA | 9A Tc | 32nC @ 10V | 10V | ±30V |
