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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STL100N8F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stl100n8f7-datasheets-0354.pdf | 8-PowerVDFN | Lead Free | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | not_compliant | e3 | Matte Tin (Sn) | 260 | STL100 | NOT SPECIFIED | 100A | 80V | 4.8W Ta 120W Tc | N-Channel | 3435pF @ 40V | 6.1m Ω @ 10A, 10V | 4.5V @ 250μA | 100A Tc | 46.8nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB33N25TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fdb33n25tm-datasheets-0474.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 11.33mm | Lead Free | 2 | 7 Weeks | 1.31247g | No SVHC | 94MOhm | 3 | ACTIVE (Last Updated: 19 hours ago) | yes | EAR99 | FAST SWITCHING, AVALANCHE RATED | Tin | No | e3 | GULL WING | Single | 235W | 1 | FET General Purpose Power | R-PSSO-G2 | 35 ns | 230ns | 120 ns | 75 ns | 33A | 30V | SILICON | DRAIN | SWITCHING | 3V | 235W Tc | 250V | N-Channel | 2135pF @ 25V | 3 V | 94m Ω @ 16.5A, 10V | 5V @ 250μA | 33A Tc | 48nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| SI4456DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4456dyt1e3-datasheets-0440.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 14 Weeks | 186.993455mg | Unknown | 3.8mOhm | 8 | No | 1 | Single | 3.5W | 1 | 8-SO | 5.67nF | 21 ns | 58ns | 8 ns | 55 ns | 33A | 20V | 40V | 2.8V | 3.5W Ta 7.8W Tc | 3.8mOhm | 40V | N-Channel | 5670pF @ 20V | 3.8mOhm @ 20A, 10V | 2.8V @ 250μA | 33A Tc | 122nC @ 10V | 3.8 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIR870DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir870dpt1ge3-datasheets-0386.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 6mOhm | 8 | yes | EAR99 | No | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 6.25W | 1 | FET General Purpose Power | R-PDSO-C5 | 8 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 100V | 1.2V | 6.25W Ta 104W Tc | N-Channel | 2840pF @ 50V | 6m Ω @ 20A, 10V | 3V @ 250μA | 60A Tc | 84nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SQD90P04-9M4L_GE3 | Vishay Siliconix | $2.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd90p049m4lge3-datasheets-0446.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 40V | 136W Tc | P-Channel | 6675pF @ 20V | 9.4mOhm @ 17A, 10V | 2.5V @ 250μA | 90A Tc | 155nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD1NK80Z-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stq1nk80zrap-datasheets-8501.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 12 Weeks | 3 | yes | EAR99 | Tin | No | e3 | 260 | STD1NK | 3 | Single | 30 | 45W | 1 | FET General Purpose Power | 8 ns | 30ns | 55 ns | 22 ns | 1A | 30V | SILICON | SWITCHING | 45W Tc | 1A | 5A | 50 mJ | 800V | N-Channel | 160pF @ 25V | 16 Ω @ 500mA, 10V | 4.5V @ 50μA | 1A Tc | 7.7nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF6717MTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-irf6717mtrpbf-datasheets-0276.pdf | DirectFET™ Isometric MX | 6.35mm | 530μm | 5.05mm | 3 | 12 Weeks | No SVHC | 5 | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 96W | 1 | FET General Purpose Power | R-XBCC-N3 | 25 ns | 37ns | 15 ns | 19 ns | 38A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.8W Ta 96W Tc | 220A | 300A | 290 mJ | 25V | N-Channel | 6750pF @ 13V | 1.8 V | 1.25m Ω @ 38A, 10V | 2.35V @ 150μA | 38A Ta 200A Tc | 69nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRLD120PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/vishaysiliconix-irld120pbf-datasheets-0552.pdf | 100V | 1.3A | 4-DIP (0.300, 7.62mm) | 6.2738mm | 3.3782mm | 5.0038mm | Lead Free | 8 Weeks | Unknown | 270mOhm | 4 | No | Single | 1.3W | 1 | 4-DIP, Hexdip, HVMDIP | 490pF | 9.8 ns | 64ns | 64 ns | 21 ns | 1.3A | 10V | 100V | 2V | 1.3W Ta | 270mOhm | 100V | N-Channel | 490pF @ 25V | 270mOhm @ 780mA, 5V | 2V @ 250μA | 1.3A Ta | 12nC @ 5V | 270 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||
| BUK9606-55A,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-buk960655a118-datasheets-9850.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | 8541.29.00.75 | e3 | YES | GULL WING | 260 | 3 | Single | 40 | 300W | 1 | R-PSSO-G2 | 45 ns | 180ns | 235 ns | 420 ns | 154A | 15V | 55V | SILICON | DRAIN | SWITCHING | 300W Tc | 75A | 616A | 0.0067Ohm | 1100 mJ | 55V | N-Channel | 8600pF @ 25V | 5.8m Ω @ 25A, 10V | 2V @ 1mA | 75A Tj | 4.5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||
| IRFD9120PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfd9120pbf-datasheets-0574.pdf | -100V | -1A | 4-DIP (0.300, 7.62mm) | 6.2738mm | 3.3782mm | 5.0038mm | Lead Free | 4 | 8 Weeks | Unknown | 600mOhm | 4 | yes | EAR99 | AVALANCHE RATED | No | DUAL | 4 | Single | 1.3W | 1 | 9.6 ns | 29ns | 29 ns | 21 ns | -1A | 20V | SILICON | DRAIN | SWITCHING | -4V | 1.3W Ta | 200 ns | 1A | 8A | 100V | P-Channel | 390pF @ 25V | -4 V | 600m Ω @ 600mA, 10V | 4V @ 250μA | 1A Ta | 18nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FDMS7650 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms7650-datasheets-0400.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Lead Free | 5 | 10 Weeks | 90mg | No SVHC | 1MOhm | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | FLAT | Single | 2.5W | 1 | FET General Purpose Power | R-PDSO-F5 | 28 ns | 24ns | 21 ns | 83 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 1.9V | 2.5W Ta 104W Tc | 36A | 450A | 544 mJ | 30V | N-Channel | 14965pF @ 15V | 1.9 V | 0.99m Ω @ 36A, 10V | 3V @ 250μA | 36A Ta 100A Tc | 209nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRFZ44VPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/infineontechnologies-irfz44vpbf-datasheets-0429.pdf | 60V | 55A | TO-220-3 | 10.668mm | 8.77mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | Single | 115W | 1 | 13 ns | 97ns | 57 ns | 40 ns | 55A | 20V | 60V | SILICON | DRAIN | SWITCHING | 4V | 115W Tc | TO-220AB | 105 ns | 220A | 60V | N-Channel | 1812pF @ 25V | 4 V | 16.5m Ω @ 31A, 10V | 4V @ 250μA | 55A Tc | 67nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| STP3LN80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp3ln80k5-datasheets-0437.pdf | TO-220-3 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | STP3LN | 800V | 45W Tc | N-Channel | 102pF @ 100V | 3.25 Ω @ 1A, 10V | 5V @ 100μA | 2A Tc | 2.63nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD50P08-25L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50p0825lge3-datasheets-0444.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | 136W | 1 | TO-252AA | 10 ns | 11ns | 16 ns | 71 ns | 50A | 20V | 80V | 136W Tc | 25mOhm | P-Channel | 5350pF @ 25V | 25mOhm @ 10.5A, 10V | 2.5V @ 250μA | 50A Tc | 137nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP2540N8-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-tp2540n8g-datasheets-0375.pdf | TO-243AA | 4.6mm | 1.6mm | 2.6mm | 3 | 16 Weeks | 52.786812mg | 4 | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | e3 | FLAT | 260 | 1 | Single | 40 | 1.6W | 1 | Other Transistors | Not Qualified | R-PSSO-F3 | 10 ns | 10ns | 10 ns | 20 ns | 125mA | 20V | SILICON | DRAIN | SWITCHING | 1.6W Ta | 30Ohm | 400V | P-Channel | 125pF @ 25V | 25 Ω @ 100mA, 10V | 2.4V @ 1mA | 125mA Tj | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFZ48NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irfz48npbf-datasheets-0459.pdf | 55V | 64A | TO-220-3 | 10.54mm | 8.77mm | 4.69mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | 2.54mm | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | e3 | 250 | Single | 30 | 94W | 1 | FET General Purpose Power | 12 ns | 78ns | 50 ns | 34 ns | 64A | 20V | 55V | SILICON | DRAIN | SWITCHING | 4V | 130W Tc | TO-220AB | 100 ns | 55V | N-Channel | 1970pF @ 25V | 4 V | 14m Ω @ 32A, 10V | 4V @ 250μA | 64A Tc | 81nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRF1404ZSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irf1404zpbf-datasheets-2186.pdf | 40V | 75A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Contains Lead | 2 | 12 Weeks | No SVHC | 3.7MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 200W | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 110ns | 58 ns | 36 ns | 190A | 20V | SILICON | DRAIN | SWITCHING | 4V | 200W Tc | 42 ns | 40V | N-Channel | 4340pF @ 25V | 4 V | 3.7m Ω @ 75A, 10V | 4V @ 150μA | 180A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPD80R360P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineon-ipd80r360p7atma1-datasheets-6577.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 84W Tc | TO-252AA | 34A | 0.36Ohm | 34 mJ | N-Channel | 930pF @ 500V | 360m Ω @ 5.6A, 10V | 3.5V @ 280μA | 13A Tc | 30nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| PHP79NQ08LT,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-php79nq08lt127-datasheets-0340.pdf | TO-220-3 | 3 | 12 Weeks | 3 | EAR99 | No | 8541.29.00.75 | e3 | Tin (Sn) | NO | 3 | Single | 157W | 1 | 30 ns | 102ns | 57 ns | 101 ns | 73A | 15V | 75V | SILICON | DRAIN | SWITCHING | 157W Tc | 240A | 0.018Ohm | 120 mJ | 75V | N-Channel | 3026pF @ 25V | 16m Ω @ 25A, 10V | 2V @ 1mA | 73A Tc | 30nC @ 5V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9640STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf9640strlpbf-datasheets-0346.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.946308g | Unknown | 500mOhm | 3 | No | 1 | Single | 3W | 1 | D2PAK | 1.2nF | 14 ns | 43ns | 38 ns | 39 ns | 11A | 20V | 200V | 200V | 4V | 3W Ta 125W Tc | 500mOhm | -200V | P-Channel | 1200pF @ 25V | 4 V | 500mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 44nC @ 10V | 500 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FQP17P06 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/onsemiconductor-fqp17p06-datasheets-0360.pdf | -60V | -17A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 6 Weeks | 1.8g | No SVHC | 120mOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | Single | 79W | 1 | Other Transistors | 13 ns | 100ns | 60 ns | 22 ns | -17A | 25V | -60V | SILICON | SWITCHING | 60V | -4V | 79W Tc | TO-220AB | 68A | -60V | P-Channel | 900pF @ 25V | -4 V | 120m Ω @ 8.5A, 10V | 4V @ 250μA | 17A Tc | 27nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||
| ZVP4424A | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zvp4424a-datasheets-0390.pdf&product=diodesincorporated-zvp4424a-6829314 | -240V | -200mA | TO-226-3, TO-92-3 (TO-226AA) | 4.77mm | 4.01mm | 2.41mm | Lead Free | 3 | 17 Weeks | 453.59237mg | No SVHC | 9Ohm | 3 | no | EAR99 | not_compliant | e3 | Matte Tin (Sn) | BOTTOM | WIRE | 260 | 3 | 1 | Single | 40 | 750mW | 1 | Not Qualified | 8 ns | 8ns | 8 ns | 26 ns | 200mA | 40V | SILICON | SWITCHING | 240V | -1.4V | 750mW Ta | 0.2A | -240V | P-Channel | 200pF @ 25V | 9 Ω @ 200mA, 10V | 2V @ 1mA | 200mA Ta | 3.5V 10V | ±40V | |||||||||||||||||||||||||||||||||||||
| IPP180N10N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp180n10n3gxksa1-datasheets-0395.pdf | TO-220-3 | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 71W | 1 | Not Qualified | 12 ns | 5 ns | 19 ns | 43A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 71W Tc | TO-220AB | 50 mJ | N-Channel | 1800pF @ 50V | 18m Ω @ 33A, 10V | 3.5V @ 33μA | 43A Tc | 25nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPP50R380CEXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp50r380cexksa1-datasheets-0408.pdf | TO-220-3 | Lead Free | 3 | 18 Weeks | 3 | yes | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 73W | 1 | Not Qualified | 7.2 ns | 5.6ns | 8.6 ns | 35 ns | 32.4A | 20V | 500V | SILICON | SWITCHING | 73W Tc | TO-220AB | 550V | N-Channel | 584pF @ 100V | 380m Ω @ 3.2A, 13V | 3.5V @ 260μA | 9.9A Tc | 24.8nC @ 10V | Super Junction | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPD65R225C7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipd65r225c7atma1-datasheets-0133.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | 3 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 63W | 1 | R-PSSO-G2 | 9 ns | 6ns | 10 ns | 48 ns | 11A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 63W Tc | 0.225Ohm | 48 mJ | N-Channel | 996pF @ 400V | 225m Ω @ 4.8A, 10V | 4V @ 240μA | 11A Tc | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRLU3410PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irlr3410trpbf-datasheets-2107.pdf | 100V | 17A | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.3876mm | Lead Free | 3 | 12 Weeks | No SVHC | 105mOhm | 3 | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | 260 | 30 | 52W | 1 | FET General Purpose Power | 7.2 ns | 53ns | 26 ns | 30 ns | 17A | 16V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2V | 79W Tc | 60A | 150 mJ | 100V | N-Channel | 800pF @ 25V | 2 V | 105m Ω @ 10A, 10V | 2V @ 250μA | 17A Tc | 34nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||
| SIR680DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sir680dpt1re3-datasheets-0103.pdf | PowerPAK® SO-8 | 1.17mm | 5 | 14 Weeks | EAR99 | S17-0173-Single | unknown | YES | DUAL | NO LEAD | NOT SPECIFIED | 1 | NOT SPECIFIED | 6.25W | 1 | 150°C | R-PDSO-N5 | 16 ns | 30 ns | 32.8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 104W Tc | 200A | 0.0029Ohm | 80 mJ | 80V | N-Channel | 5150pF @ 40V | 2.9m Ω @ 20A, 10V | 3.4V @ 250μA | 100A Tc | 81nC @ 7.5V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| AON6250 | Alpha & Omega Semiconductor Inc. | $1.12 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | 8-PowerSMD, Flat Leads | 18 Weeks | 8-DFN (5x6) | 2.388nF | 52A | 150V | 7.4W Ta 104W Tc | N-Channel | 2388pF @ 75V | 16.5mOhm @ 20A, 10V | 3.4V @ 250μA | 13.5A Ta 52A Tc | 43nC @ 10V | 16.5 mΩ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPHR8504PL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 1mm | 12 Weeks | 8 | Silver, Tin | 1 | 1W | 8-SOP Advance (5x5) | 9.6nF | 26 ns | 13ns | 14 ns | 63 ns | 340A | 20V | 40V | 1.4V | 1W Ta 170W Tc | 700μOhm | 40V | N-Channel | 9600pF @ 20V | 0.85mOhm @ 50A, 10V | 2.4V @ 1mA | 150A Tc | 103nC @ 10V | 850 μΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCD9N60NTM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SupreMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fcd9n60ntm-datasheets-9450.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 12 Weeks | 260.37mg | No SVHC | 3 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | FCD9N60 | Single | NOT SPECIFIED | 92.6W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 12.7 ns | 9.6ns | 11.5 ns | 28.7 ns | 9A | 30V | SILICON | DRAIN | SWITCHING | 3V | 92.6W Tc | 9A | 27A | 600V | N-Channel | 1000pF @ 100V | 385m Ω @ 4.5A, 10V | 5V @ 250μA | 9A Tc | 17.8nC @ 10V | 10V | ±30V |
