Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Part Status Series Mounting Type Operating Temperature Moisture Sensitivity Level (MSL) Technology Operating Mode RoHS Status Published Datasheet Package / Case Factory Lead Time Pbfree Code ECCN Code Additional Feature Reach Compliance Code HTS Code JESD-609 Code Terminal Finish Surface Mount Terminal Position Terminal Form Peak Reflow Temperature (Cel) Pin Count Operating Temperature (Max) Time@Peak Reflow Temperature-Max (s) Number of Elements Subcategory Qualification Status JESD-30 Code Supplier Device Package Transistor Element Material Configuration Case Connection Transistor Application Polarity/Channel Type Power Dissipation-Max (Abs) Drain to Source Voltage (Vdss) DS Breakdown Voltage-Min FET Technology JEDEC-95 Code Drain Current-Max (Abs) (ID) Pulsed Drain Current-Max (IDM) Drain-source On Resistance-Max Feedback Cap-Max (Crss) Avalanche Energy Rating (Eas) FET Type Input Capacitance (Ciss) (Max) @ Vds Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Current - Continuous Drain (Id) @ 25°C Gate Charge (Qg) (Max) @ Vgs FET Feature Vgs (Max) Number of Terminals Package Mfr Product Status Drive Voltage (Max Rds On, Min Rds On) Power Dissipation (Max)
IRF123 IRF123 International Rectifier $140.91
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0 0x0x0 - Through Hole -55°C ~ 150°C (TJ) MOSFET (Metal Oxide) TO-204AA, TO-3 TO-3 60 V N-Channel 600 pF @ 25 V 400mOhm @ 4A, 10V 4V @ 250μA 7A (Tc) 15 nC @ 10 V - ±20V International Rectifier
RFP15N12 RFP15N12 Harris Corporation $212.15
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0 0x0x0 - Through Hole -55°C ~ 150°C (TJ) MOSFET (Metal Oxide) TO-220-3 TO-220-3 120 V N-Channel 1700 pF @ 25 V 150mOhm @ 7.5A, 10V 4V @ 1mA 15A (Tc) - ±20V Harris Corporation
IRF523 IRF523 Harris Corporation $8.96
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Min: 1

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0 0x0x0 - Through Hole -55°C ~ 175°C (TJ) MOSFET (Metal Oxide) TO-220-3 TO-220 80 V N-Channel 350 pF @ 25 V 360mOhm @ 5.6A, 10V 4V @ 250μA 8A (Tc) 15 nC @ 10 V - ±20V Bulk Harris Corporation Active 10V 60W (Tc)
RFP18N08 RFP18N08 Harris Corporation $1.22
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Min: 1

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0 0x0x0 - Through Hole -55°C ~ 150°C (TJ) MOSFET (Metal Oxide) TO-220-3 TO-220 80 V N-Channel 1700 pF @ 25 V 100mOhm @ 9A, 10V 4V @ 1mA 18A (Tc) - ±20V Harris Corporation
IRF613 IRF613 Harris Corporation
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Min: 1

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0 0x0x0 - Through Hole -55°C ~ 150°C (TJ) MOSFET (Metal Oxide) TO-220-3 TO-220AB 150 V N-Channel 135 pF @ 25 V 2.4Ohm @ 1.6A, 10V 4V @ 250μA 2.6A (Tc) 8.2 nC @ 10 V - ±20V Bulk Harris Corporation Active 10V 43W (Tc)
BSC110N06NS3G BSC110N06NS3G Infineon $2.89
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Min: 1

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0 0x0x0 /storage/upload/BSC110N06NS3-G.pdf
NTB52N10 NTB52N10 ON Semiconductor
RFQ

Min: 1

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0 0x0x0 1 (Unlimited) ENHANCEMENT MODE Non-RoHS Compliant [object Object] EAR99 not_compliant e0 Tin/Lead (Sn80Pb20) YES SINGLE GULL WING 235 3 150°C NOT SPECIFIED 1 FET General Purpose Power Not Qualified R-PSSO-G2 SILICON SINGLE WITH BUILT-IN DIODE DRAIN SWITCHING N-CHANNEL 178W 100V METAL-OXIDE SEMICONDUCTOR 52A 156A 0.03Ohm 800 mJ 2
NTD20N06L NTD20N06L ON Semiconductor
RFQ

Min: 1

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0 0x0x0 1 (Unlimited) ENHANCEMENT MODE Non-RoHS Compliant EAR99 not_compliant e0 Tin/Lead (Sn80Pb20) YES SINGLE GULL WING 240 3 175°C 30 1 FET General Purpose Power Not Qualified R-PSSO-G2 SILICON SINGLE WITH BUILT-IN DIODE DRAIN SWITCHING N-CHANNEL 1.36W 60V METAL-OXIDE SEMICONDUCTOR 20A 60A 0.048Ohm 128 mJ 2
NTD3055L170T4 NTD3055L170T4 ON Semiconductor
RFQ

Min: 1

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0 0x0x0 Non-RoHS Compliant [object Object] not_compliant 8541.29.00.95 3
NTD24N06LT4 NTD24N06LT4 ON Semiconductor
RFQ

Min: 1

Mult: 1

0 0x0x0 ENHANCEMENT MODE Non-RoHS Compliant [object Object] EAR99 LOGIC LEVEL COMPATIBLE not_compliant 8541.29.00.95 e0 Tin/Lead (Sn80Pb20) YES SINGLE GULL WING 240 3 175°C 30 1 FET General Purpose Power Not Qualified R-PSSO-G2 SILICON SINGLE WITH BUILT-IN DIODE DRAIN SWITCHING N-CHANNEL 1.36W 60V METAL-OXIDE SEMICONDUCTOR 24A 72A 0.045Ohm 162 mJ 2
NTD60N02R-001 NTD60N02R-001 ON Semiconductor
RFQ

Min: 1

Mult: 1

0 0x0x0 Non-RoHS Compliant EAR99 not_compliant 3
NTGS3433T1 NTGS3433T1 ON Semiconductor
RFQ

Min: 1

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0 0x0x0 1 (Unlimited) ENHANCEMENT MODE Non-RoHS Compliant EAR99 not_compliant e0 Tin/Lead (Sn80Pb20) YES DUAL GULL WING 235 6 150°C 30 1 Other Transistors Not Qualified R-PDSO-G6 SILICON SINGLE WITH BUILT-IN DIODE SWITCHING P-CHANNEL 0.5W 12V METAL-OXIDE SEMICONDUCTOR 1.65A 0.075Ohm 6
2SJ655 2SJ655 ON Semiconductor
RFQ

Min: 1

Mult: 1

0 0x0x0 ENHANCEMENT MODE RoHS Compliant [object Object] Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) NO 150°C Other Transistors Single P-CHANNEL 25W METAL-OXIDE SEMICONDUCTOR 12A
2SK3709 2SK3709 ON Semiconductor
RFQ

Min: 1

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0 0x0x0 ENHANCEMENT MODE RoHS Compliant [object Object] 8541.29.00.95 Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) NO SINGLE THROUGH-HOLE 3 1 Not Qualified R-PSFM-T3 SILICON SINGLE WITH BUILT-IN DIODE ISOLATED SWITCHING N-CHANNEL 100V METAL-OXIDE SEMICONDUCTOR TO-220AB 37A 148A 0.032Ohm 427 mJ 3
2SK4094 2SK4094 SANYO SEMICONDUCTOR CO LTD
RFQ

Min: 1

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0 0x0x0
IRF1104LPBF IRF1104LPBF Infineon Technologies AG
RFQ

Min: 1

Mult: 1

0 0x0x0 1 (Unlimited) ENHANCEMENT MODE RoHS Compliant [object Object] EAR99 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE compliant e3 Matte Tin (Sn) - with Nickel (Ni) barrier NO SINGLE THROUGH-HOLE 260 175°C 30 1 FET General Purpose Power Not Qualified R-PSIP-T3 SILICON SINGLE WITH BUILT-IN DIODE DRAIN SWITCHING N-CHANNEL 170W 40V METAL-OXIDE SEMICONDUCTOR TO-262AA 100A 400A 0.009Ohm 350 mJ 3
IRFZ48VSPBF IRFZ48VSPBF Infineon Technologies AG
RFQ

Min: 1

Mult: 1

0 0x0x0 1 (Unlimited) ENHANCEMENT MODE RoHS Compliant [object Object] EAR99 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE compliant e3 Matte Tin (Sn) - with Nickel (Ni) barrier YES SINGLE GULL WING 260 175°C 30 1 FET General Purpose Power Not Qualified R-PSSO-G2 SILICON SINGLE WITH BUILT-IN DIODE DRAIN SWITCHING N-CHANNEL 150W 60V METAL-OXIDE SEMICONDUCTOR 72A 290A 0.012Ohm 166 mJ 2
2SK3702 2SK3702 ON Semiconductor
RFQ

Min: 1

Mult: 1

0 0x0x0 DEPLETION MODE RoHS Compliant [object Object] 8541.29.00.95 Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) NO SINGLE THROUGH-HOLE 3 1 Not Qualified R-PSFM-T3 SILICON SINGLE ISOLATED SWITCHING N-CHANNEL 60V METAL-OXIDE SEMICONDUCTOR TO-220AB 18A 72A 0.085Ohm 3
2SK4096LS 2SK4096LS ON Semiconductor
RFQ

Min: 1

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0 0x0x0 ENHANCEMENT MODE RoHS Compliant [object Object] HIGH RELIABILITY 8541.29.00.95 Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) NO SINGLE THROUGH-HOLE 3 1 Not Qualified R-PSFM-T3 SILICON SINGLE WITH BUILT-IN DIODE SWITCHING N-CHANNEL 500V METAL-OXIDE SEMICONDUCTOR TO-220AB 8A 32A 0.85Ohm 397 mJ 3
AUIRFSL8408 AUIRFSL8408 Infineon Technologies AG
RFQ

Min: 1

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0 0x0x0 1 (Unlimited) RoHS Compliant EAR99 compliant NO NOT SPECIFIED 175°C NOT SPECIFIED FET General Purpose Power Single N-CHANNEL 294W METAL-OXIDE SEMICONDUCTOR 195A
2SK2632LS 2SK2632LS SANYO ELECTRIC CO LTD
RFQ

Min: 1

Mult: 1

0 0x0x0 ENHANCEMENT MODE 8541.29.00.95 NO SINGLE THROUGH-HOLE 3 150°C 1 FET General Purpose Power Not Qualified R-PSFM-T3 SILICON SINGLE WITH BUILT-IN DIODE ISOLATED SWITCHING N-CHANNEL 25W 800V METAL-OXIDE SEMICONDUCTOR 2.5A 7.5A 4.8Ohm 3
2SJ651 2SJ651 ON Semiconductor
RFQ

Min: 1

Mult: 1

0 0x0x0 ENHANCEMENT MODE RoHS Compliant [object Object] 8541.29.00.95 Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) NO SINGLE THROUGH-HOLE 3 1 Not Qualified R-PSFM-T3 SILICON SINGLE WITH BUILT-IN DIODE ISOLATED SWITCHING P-CHANNEL 60V METAL-OXIDE SEMICONDUCTOR TO-220AB 20A 80A 0.092Ohm 175 mJ 3
2SK4097LS 2SK4097LS SANYO SEMICONDUCTOR CO LTD $5.98
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0 0x0x0
XR46000ESE XR46000ESE Exar Corporation
RFQ

Min: 1

Mult: 1

0 0x0x0 compliant
XR46000ESETR XR46000ESETR Exar Corporation
RFQ

Min: 1

Mult: 1

0 0x0x0 download 2014 8 Weeks icon-pbfree yes compliant
SPW20N60C3 SPW20N60C3 Infineon Technologies AG
RFQ

Min: 1

Mult: 1

0 0x0x0 ENHANCEMENT MODE RoHS Compliant icon-pbfree yes AVALANCHE RATED compliant e3 Matte Tin (Sn) NO SINGLE THROUGH-HOLE NOT SPECIFIED 3 150°C NOT SPECIFIED 1 FET General Purpose Power Not Qualified R-PSFM-T3 SILICON SINGLE WITH BUILT-IN DIODE N-CHANNEL 208W 600V METAL-OXIDE SEMICONDUCTOR TO-247AD 20.7A 62.1A 0.19Ohm 690 mJ 3
PMXB56EN PMXB56EN Nexperia
RFQ

Min: 1

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0 0x0x0 EAR99 compliant
FDN340P FDN340P Fairchild Semiconductor Corporation $0.15
RFQ

Min: 1

Mult: 1

0 0x0x0 1 (Unlimited) ENHANCEMENT MODE RoHS Compliant icon-pbfree yes EAR99 compliant 8541.21.00.95 e3 Matte Tin (Sn) YES DUAL GULL WING NOT SPECIFIED 3 150°C NOT SPECIFIED 1 Other Transistors Not Qualified R-PDSO-G3 SILICON SINGLE WITH BUILT-IN DIODE SWITCHING P-CHANNEL 0.5W 20V METAL-OXIDE SEMICONDUCTOR 2A 70Ohm 3
BSS138 BSS138 Fairchild Semiconductor Corporation $0.48
RFQ

Min: 1

Mult: 1

0 0x0x0 1 (Unlimited) ENHANCEMENT MODE RoHS Compliant icon-pbfree yes EAR99 LOGIC LEVEL COMPATIBLE compliant 8541.21.00.95 e3 Matte Tin (Sn) YES DUAL GULL WING 260 3 150°C NOT SPECIFIED 1 FET General Purpose Power Not Qualified R-PDSO-G3 SILICON SINGLE WITH BUILT-IN DIODE SWITCHING N-CHANNEL 0.36W 50V METAL-OXIDE SEMICONDUCTOR 0.2A 6Ohm 10 pF 3
BSS84 BSS84 Fairchild Semiconductor Corporation $0.16
RFQ

Min: 1

Mult: 1

0 0x0x0 1 (Unlimited) ENHANCEMENT MODE RoHS Compliant icon-pbfree yes EAR99 compliant 8541.21.00.95 e3 Matte Tin (Sn) YES DUAL GULL WING 260 3 150°C NOT SPECIFIED 1 Other Transistors Not Qualified R-PDSO-G3 SILICON SINGLE WITH BUILT-IN DIODE SWITCHING P-CHANNEL 0.25W 50V METAL-OXIDE SEMICONDUCTOR TO-236AB 0.13A 10Ohm 12 pF 3

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