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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mounting Type | Operating Temperature | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Factory Lead Time | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Vgs (Max) | Number of Terminals | Package | Mfr | Product Status | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) |
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| IRF123 | International Rectifier | $140.91 |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Through Hole | -55°C ~ 150°C (TJ) | MOSFET (Metal Oxide) | TO-204AA, TO-3 | TO-3 | 60 V | N-Channel | 600 pF @ 25 V | 400mOhm @ 4A, 10V | 4V @ 250μA | 7A (Tc) | 15 nC @ 10 V | - | ±20V | International Rectifier | ||||||||||||||||||||||||||||||||||||||||||||||
| RFP15N12 | Harris Corporation | $212.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Through Hole | -55°C ~ 150°C (TJ) | MOSFET (Metal Oxide) | TO-220-3 | TO-220-3 | 120 V | N-Channel | 1700 pF @ 25 V | 150mOhm @ 7.5A, 10V | 4V @ 1mA | 15A (Tc) | - | ±20V | Harris Corporation | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF523 | Harris Corporation | $8.96 |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Through Hole | -55°C ~ 175°C (TJ) | MOSFET (Metal Oxide) | TO-220-3 | TO-220 | 80 V | N-Channel | 350 pF @ 25 V | 360mOhm @ 5.6A, 10V | 4V @ 250μA | 8A (Tc) | 15 nC @ 10 V | - | ±20V | Bulk | Harris Corporation | Active | 10V | 60W (Tc) | ||||||||||||||||||||||||||||||||||||||||||
| RFP18N08 | Harris Corporation | $1.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Through Hole | -55°C ~ 150°C (TJ) | MOSFET (Metal Oxide) | TO-220-3 | TO-220 | 80 V | N-Channel | 1700 pF @ 25 V | 100mOhm @ 9A, 10V | 4V @ 1mA | 18A (Tc) | - | ±20V | Harris Corporation | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF613 | Harris Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Through Hole | -55°C ~ 150°C (TJ) | MOSFET (Metal Oxide) | TO-220-3 | TO-220AB | 150 V | N-Channel | 135 pF @ 25 V | 2.4Ohm @ 1.6A, 10V | 4V @ 250μA | 2.6A (Tc) | 8.2 nC @ 10 V | - | ±20V | Bulk | Harris Corporation | Active | 10V | 43W (Tc) | |||||||||||||||||||||||||||||||||||||||||||
| BSC110N06NS3G | Infineon | $2.89 |
Min: 1 Mult: 1 |
0 | 0x0x0 | /storage/upload/BSC110N06NS3-G.pdf | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTB52N10 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | [object Object] | EAR99 | not_compliant | e0 | Tin/Lead (Sn80Pb20) | YES | SINGLE | GULL WING | 235 | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 178W | 100V | METAL-OXIDE SEMICONDUCTOR | 52A | 156A | 0.03Ohm | 800 mJ | 2 | |||||||||||||||||||||||||||||||
| NTD20N06L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | EAR99 | not_compliant | e0 | Tin/Lead (Sn80Pb20) | YES | SINGLE | GULL WING | 240 | 3 | 175°C | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 1.36W | 60V | METAL-OXIDE SEMICONDUCTOR | 20A | 60A | 0.048Ohm | 128 mJ | 2 | ||||||||||||||||||||||||||||||||
| NTD3055L170T4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | Non-RoHS Compliant | [object Object] | not_compliant | 8541.29.00.95 | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD24N06LT4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | Non-RoHS Compliant | [object Object] | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn80Pb20) | YES | SINGLE | GULL WING | 240 | 3 | 175°C | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 1.36W | 60V | METAL-OXIDE SEMICONDUCTOR | 24A | 72A | 0.045Ohm | 162 mJ | 2 | ||||||||||||||||||||||||||||||
| NTD60N02R-001 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | Non-RoHS Compliant | EAR99 | not_compliant | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTGS3433T1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | EAR99 | not_compliant | e0 | Tin/Lead (Sn80Pb20) | YES | DUAL | GULL WING | 235 | 6 | 150°C | 30 | 1 | Other Transistors | Not Qualified | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | P-CHANNEL | 0.5W | 12V | METAL-OXIDE SEMICONDUCTOR | 1.65A | 0.075Ohm | 6 | |||||||||||||||||||||||||||||||||||
| 2SJ655 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | [object Object] | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) | NO | 150°C | Other Transistors | Single | P-CHANNEL | 25W | METAL-OXIDE SEMICONDUCTOR | 12A | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3709 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | [object Object] | 8541.29.00.95 | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) | NO | SINGLE | THROUGH-HOLE | 3 | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | N-CHANNEL | 100V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 37A | 148A | 0.032Ohm | 427 mJ | 3 | ||||||||||||||||||||||||||||||||||||||
| IRF1104LPBF | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | [object Object] | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NO | SINGLE | THROUGH-HOLE | 260 | 175°C | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 170W | 40V | METAL-OXIDE SEMICONDUCTOR | TO-262AA | 100A | 400A | 0.009Ohm | 350 mJ | 3 | ||||||||||||||||||||||||||||||
| IRFZ48VSPBF | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | [object Object] | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 175°C | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 150W | 60V | METAL-OXIDE SEMICONDUCTOR | 72A | 290A | 0.012Ohm | 166 mJ | 2 | |||||||||||||||||||||||||||||||
| 2SK3702 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | DEPLETION MODE | RoHS Compliant | [object Object] | 8541.29.00.95 | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) | NO | SINGLE | THROUGH-HOLE | 3 | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | ISOLATED | SWITCHING | N-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 18A | 72A | 0.085Ohm | 3 | |||||||||||||||||||||||||||||||||||||||
| 2SK4096LS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | [object Object] | HIGH RELIABILITY | 8541.29.00.95 | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) | NO | SINGLE | THROUGH-HOLE | 3 | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 500V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 8A | 32A | 0.85Ohm | 397 mJ | 3 | ||||||||||||||||||||||||||||||||||||||
| 2SK4094 | SANYO SEMICONDUCTOR CO LTD |
Min: 1 Mult: 1 |
0 | 0x0x0 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFSL8408 | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | RoHS Compliant | EAR99 | compliant | NO | NOT SPECIFIED | 175°C | NOT SPECIFIED | FET General Purpose Power | Single | N-CHANNEL | 294W | METAL-OXIDE SEMICONDUCTOR | 195A | |||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2632LS | SANYO ELECTRIC CO LTD |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | 8541.29.00.95 | NO | SINGLE | THROUGH-HOLE | 3 | 150°C | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | N-CHANNEL | 25W | 800V | METAL-OXIDE SEMICONDUCTOR | 2.5A | 7.5A | 4.8Ohm | 3 | ||||||||||||||||||||||||||||||||||||||||
| 2SJ651 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | [object Object] | 8541.29.00.95 | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) | NO | SINGLE | THROUGH-HOLE | 3 | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | P-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 20A | 80A | 0.092Ohm | 175 mJ | 3 | ||||||||||||||||||||||||||||||||||||||
| 2SK4097LS | SANYO SEMICONDUCTOR CO LTD | $5.98 |
Min: 1 Mult: 1 |
0 | 0x0x0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| XR46000ESE | Exar Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| XR46000ESETR | Exar Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 2014 | 8 Weeks | icon-pbfree yes | compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPW20N60C3 | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | AVALANCHE RATED | compliant | e3 | Matte Tin (Sn) | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | N-CHANNEL | 208W | 600V | METAL-OXIDE SEMICONDUCTOR | TO-247AD | 20.7A | 62.1A | 0.19Ohm | 690 mJ | 3 | |||||||||||||||||||||||||||||||||
| PMXB56EN | Nexperia |
Min: 1 Mult: 1 |
0 | 0x0x0 | EAR99 | compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDN340P | Fairchild Semiconductor Corporation | $0.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | 8541.21.00.95 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | P-CHANNEL | 0.5W | 20V | METAL-OXIDE SEMICONDUCTOR | 2A | 70Ohm | 3 | ||||||||||||||||||||||||||||||||
| BSS84 | Fairchild Semiconductor Corporation | $0.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | 8541.21.00.95 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 3 | 150°C | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | P-CHANNEL | 0.25W | 50V | METAL-OXIDE SEMICONDUCTOR | TO-236AB | 0.13A | 10Ohm | 12 pF | 3 | ||||||||||||||||||||||||||||||
| BSS138 | Fairchild Semiconductor Corporation | $0.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | 8541.21.00.95 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 0.36W | 50V | METAL-OXIDE SEMICONDUCTOR | 0.2A | 6Ohm | 10 pF | 3 |
