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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Moisture Sensitivity Level (MSL) | Operating Mode | RoHS Status | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | DS Breakdown Voltage-Min | FET Technology | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Number of Terminals |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDPF7N50U_G | Fairchild Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | 8541.29.00.95 | e3 | MATTE TIN | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | N-CHANNEL | 500V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 5A | 20A | 1.5Ohm | 125 mJ | 3 | |||||||||||
| IPB036N12N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 120V | METAL-OXIDE SEMICONDUCTOR | TO-263 | 180A | 720A | 0.0036Ohm | 900 mJ | 6 | |||||||||
| IPP320N20N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | e3 | Tin (Sn) | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 200V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 34A | 136A | 0.032Ohm | 190 mJ | 3 | |||||||||||
| BSB044N08NN3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 3 (168 Hours) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | e4 | Silver/Nickel (Ag/Ni) | YES | BOTTOM | NO LEAD | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-MBCC-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 80V | METAL-OXIDE SEMICONDUCTOR | 18A | 360A | 0.0044Ohm | 660 mJ | 3 | |||||||||||
| IPB030N08N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 7 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 80V | METAL-OXIDE SEMICONDUCTOR | 160A | 640A | 0.003Ohm | 510 mJ | 6 | ||||||||||
| IPP110N20NA | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | compliant | e3 | Matte Tin (Sn) | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 300W | 200V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 88A | 352A | 0.011Ohm | 560 mJ | 3 | ||||||||||
| BSC16DN25NS3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 8 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 250V | METAL-OXIDE SEMICONDUCTOR | 10.9A | 44A | 0.165Ohm | 120 mJ | 5 | ||||||||||
| IPB020NE7N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 75V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 120A | 480A | 0.002Ohm | 1100 mJ | 2 | |||||||||
| IPI045N10N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 214W | 100V | METAL-OXIDE SEMICONDUCTOR | TO-262AA | 100A | 400A | 0.0045Ohm | 340 mJ | 3 | |||||||||||
| BSC014N04LS | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE | not_compliant | 8541.29.00.95 | e3 | TIN | YES | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | R-PDSO-F3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 32A | 400A | 0.0019Ohm | 170 mJ | 3 | ||||||||||
| SPP06N80C3 | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | AVALANCHE RATED, HIGH VOLTAGE | compliant | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 83W | 800V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 6A | 18A | 0.9Ohm | 230 mJ | 3 | |||||||||||
| IPA057N06N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | e3 | Tin (Sn) | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 60A | 240A | 0.0057Ohm | 77 mJ | 3 | |||||||||||
| IRF634B_FP001 | Fairchild Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | 8541.29.00.95 | e3 | Matte Tin (Sn) | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 74W | 250V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 8.1A | 32.4A | 0.45Ohm | 200 mJ | 3 | ||||||||
| FDP150N10A_F102 | Fairchild Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | NOT APPLICABLE | RoHS Compliant | icon-pbfree yes | compliant | e3 | MATTE TIN | NOT SPECIFIED | 3 | NOT SPECIFIED | |||||||||||||||||||||||||||||||
| FDB9403_F085 | Fairchild Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Matte Tin (Sn) | AEC-Q101 | YES | SINGLE | GULL WING | 260 | 2 | 175°C | 30 | 1 | FET General Purpose Power | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 333W | 40V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 110A | 0.0012Ohm | 968 mJ | 2 | |||||||
| FDB8445_F085 | Fairchild Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | 260 | 2 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 92W | 40V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 70A | 0.009Ohm | 102 mJ | 2 | |||||||
| FDB8444_F085 | Fairchild Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | 260 | 2 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 167W | 40V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 70A | 0.0055Ohm | 307 mJ | 2 | |||||||
| FQB25N33TM_F085 | Fairchild Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | 245 | 2 | 150°C | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 250W | 330V | METAL-OXIDE SEMICONDUCTOR | 25A | 100A | 0.23Ohm | 370 mJ | 2 | |||||||
| FCPF380N60_F152 | Fairchild Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | not_compliant | e3 | Matte Tin (Sn) | NO | SINGLE | THROUGH-HOLE | 150°C | 1 | FET General Purpose Powers | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | N-CHANNEL | 31W | 600V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 10.2A | 30.6A | 0.38Ohm | 211.6 mJ | 3 | ||||||||||||||
| HUF76633S3ST_F085 | Fairchild Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | EAR99 | not_compliant | e3 | Matte Tin (Sn) | AEC-Q101 | YES | SINGLE | GULL WING | 260 | 175°C | 30 | 1 | FET General Purpose Powers | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 183W | 100V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 39A | 0.035Ohm | 267 mJ | 2 | ||||||||||
| BSZ165N04NS G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 8 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Powers | Not Qualified | R-PDSO-F8 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 25W | 40V | METAL-OXIDE SEMICONDUCTOR | 31A | 124A | 0.0165Ohm | 5 mJ | 8 | ||||||||
| SPA03N60C3 | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | AVALANCHE RATED | compliant | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | N-CHANNEL | 29.7W | 600V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 2.8A | 9.6A | 1.4Ohm | 100 mJ | 3 | ||||||||||
| CEDM7001VL TR | Central Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | compliant | |||||||||||||||||||||||||||||||||||||||
| IPB038N12N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 120V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 120A | 480A | 0.0038Ohm | 900 mJ | 2 | |||||||||
| CMPDM7002AG BK | Central Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | compliant | |||||||||||||||||||||||||||||||||||||||
| BSZ130N03MS G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | DUAL | NO LEAD | NOT SPECIFIED | 8 | 175°C | NOT SPECIFIED | 1 | Not Qualified | S-PDSO-N5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 9A | 140A | 0.015Ohm | 9 mJ | 5 | |||||||||
| IPD80N04S3-06 | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | ULTRA LOW RESISTANCE | compliant | 8541.29.00.95 | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | 88W | 40V | METAL-OXIDE SEMICONDUCTOR | TO-252AA | 80A | 320A | 0.0052Ohm | 125 mJ | 2 | ||||||||
| CMUDM7004 TR | Central Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | compliant | YES | 150°C | FET General Purpose Power | Single | N-CHANNEL | 0.25W | METAL-OXIDE SEMICONDUCTOR | 0.45A | |||||||||||||||||||||||||||||
| BSZ130N03LS G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | YES | DUAL | NO LEAD | 8 | 150°C | -55°C | 1 | Not Qualified | S-PDSO-N5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 25W | 30V | METAL-OXIDE SEMICONDUCTOR | 35A | 140A | 0.013Ohm | 9 mJ | 5 | |||||||||
| IPP200N25N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 250V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 64A | 256A | 0.02Ohm | 320 mJ | 3 |
