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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Mount | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Continuous Drain Current (ID) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Rds On Max | Capacitance - Input | Number of Terminals |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPB320N20N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 200V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 34A | 136A | 0.032Ohm | 190 mJ | 2 | |||||||||||||||||||
| IRFNL210BTA_FP001 | Fairchild Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | NOT APPLICABLE | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | compliant | e3 | Matte Tin (Sn) | NO | BOTTOM | THROUGH-HOLE | NOT APPLICABLE | 3 | 150°C | NOT APPLICABLE | 1 | FET General Purpose Power | Not Qualified | O-PBCY-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 3.1W | 200V | METAL-OXIDE SEMICONDUCTOR | TO-92 | 1A | 1.5Ohm | 9 pF | 3 | |||||||||||||||||||||
| IPB039N10N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 214W | 100V | METAL-OXIDE SEMICONDUCTOR | TO-263AA | 160A | 640A | 0.0039Ohm | 340 mJ | 6 | ||||||||||||||||||
| IPP60R950C6 | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | compliant | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 37W | 600V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 4.4A | 12A | 0.95Ohm | 46 mJ | 3 | |||||||||||||||||||||||
| IPB042N03L G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 70A | 400A | 0.006Ohm | 60 mJ | 2 | |||||||||||||||||||
| IPB65R420CFD | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 650V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 8.7A | 27A | 0.42Ohm | 227 mJ | 2 | ||||||||||||||||||||||||
| BSB165N15NZ3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 3 (168 Hours) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | e4 | Silver/Nickel (Ag/Ni) | YES | BOTTOM | NO LEAD | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-MBCC-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 78W | 150V | METAL-OXIDE SEMICONDUCTOR | 45A | 180A | 0.0165Ohm | 440 mJ | 3 | |||||||||||||||||||
| IPB025N08N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 300W | 80V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 120A | 480A | 0.0025Ohm | 1430 mJ | 2 | ||||||||||||||||||
| CMUDM7005 TR | Central Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | compliant | YES | 150°C | FET General Purpose Power | Single | N-CHANNEL | 0.3W | METAL-OXIDE SEMICONDUCTOR | 0.65A | ||||||||||||||||||||||||||||||||||||||||
| BSB028N06NN3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 3 (168 Hours) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | e4 | Silver/Nickel (Ag/Ni) | YES | BOTTOM | NO LEAD | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-MBCC-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 78W | 60V | METAL-OXIDE SEMICONDUCTOR | 90A | 360A | 0.0028Ohm | 590 mJ | 3 | |||||||||||||||||||
| PMXB350UPE | Nexperia |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | RoHS Compliant | icon-pbfree yes | compliant | e3 | Tin (Sn) | |||||||||||||||||||||||||||||||||||||||||||||
| CMPDM7002AHC TR | Central Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | compliant | YES | 150°C | FET General Purpose Power | Single | N-CHANNEL | 0.35W | METAL-OXIDE SEMICONDUCTOR | 1A | ||||||||||||||||||||||||||||||||||||||||
| CMPDM7002AG TR | Central Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | Non-RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | 8541.21.00.95 | e0 | Tin/Lead (Sn/Pb) | YES | DUAL | GULL WING | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 0.35W | 60V | METAL-OXIDE SEMICONDUCTOR | 0.28A | 2Ohm | 5 pF | 3 | |||||||||||||||||||||
| IPD70N03S4L-04 | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | ULTRA LOW RESISTANCE | compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | 68W | 30V | METAL-OXIDE SEMICONDUCTOR | TO-252AA | 70A | 280A | 0.0043Ohm | 57 mJ | 2 | ||||||||||||||||||||
| 2N7002 L6327 | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 3 | 150°C | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 0.5W | 60V | METAL-OXIDE SEMICONDUCTOR | 0.3A | 3Ohm | 3 pF | 3 | |||||||||||||||||||||
| IPB60R380C6 | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | HIGH VOLTAGE | compliant | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 83W | 600V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 10.6A | 30A | 0.38Ohm | 210 mJ | 2 | ||||||||||||||||||
| IPP041N12N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | e3 | Tin (Sn) | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 120V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 120A | 480A | 0.0041Ohm | 900 mJ | 3 | ||||||||||||||||||||||
| BSZ086P03NS3E G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | ESD PROTECTED | not_compliant | e3 | Tin (Sn) | YES | DUAL | NO LEAD | NOT SPECIFIED | 8 | 150°C | NOT SPECIFIED | 1 | Not Qualified | S-PDSO-N5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | P-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 13.5A | 160A | 0.0134Ohm | 105 mJ | 5 | ||||||||||||||||||||
| IPP60R600C6 | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | compliant | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 63W | 600V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 7.3A | 19A | 0.6Ohm | 133 mJ | 3 | |||||||||||||||||||||||
| CEDM8004 TR | Central Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | compliant | YES | 150°C | Other Transistors | Single | P-CHANNEL | 0.1W | METAL-OXIDE SEMICONDUCTOR | 0.45A | ||||||||||||||||||||||||||||||||||||||||
| CXDM6053N TR | Central Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | compliant | YES | 150°C | FET General Purpose Power | Single | N-CHANNEL | 1.2W | METAL-OXIDE SEMICONDUCTOR | 5.3A | ||||||||||||||||||||||||||||||||||||||||
| CMPDM7003 TR | Central Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | EAR99 | compliant | 8541.21.00.95 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 3 | 150°C | 10 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE | SWITCHING | N-CHANNEL | 0.35W | 50V | METAL-OXIDE SEMICONDUCTOR | 0.28A | 3Ohm | 5 pF | 3 | |||||||||||||||||||||
| IPP90R1K2C3 | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | compliant | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 83W | 900V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 5.1A | 10A | 1.2Ohm | 68 mJ | 3 | |||||||||||||||||||||||
| BSB013NE2LXI | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 3 (168 Hours) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | 8541.29.00.95 | e4 | Silver/Nickel (Ag/Ni) | YES | BOTTOM | NO LEAD | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-MBCC-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 57W | 25V | METAL-OXIDE SEMICONDUCTOR | 163A | 400A | 0.0018Ohm | 130 mJ | 3 | ||||||||||||||||||
| IPB020N04N G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | ULTRA-LOW RESISTANCE | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | 175°C | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 167W | 40V | METAL-OXIDE SEMICONDUCTOR | TO-263 | 140A | 980A | 0.002Ohm | 140 mJ | 6 | |||||||||||||||||
| BSO201SP H | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 3 (168 Hours) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 8 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 9.3A | 59.6A | 0.008Ohm | 248 mJ | 8 | |||||||||||||||||||||||
| IPB034N06L3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 167W | 60V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 90A | 360A | 0.0034Ohm | 165 mJ | 2 | |||||||||||||||||
| EPC2045ENGRT | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FDN359BN_F095 | ON Semiconductor | $0.90 |
Min: 1 Mult: 1 |
0 | 0x0x0 | Digi-Reel® | 150°C | -55°C | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdn359bnf095-datasheets-2446.pdf | 12 Weeks | 3 | ||||||||||||||||||||||||||||||||||||||||||
| EPC2038ENGR | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | 150°C | -40°C | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/epc-epc2038engr-datasheets-9095.pdf | 500mA | 100V | 2.8 Ω | 7pF |
