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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Moisture Sensitivity Level (MSL) | Operating Mode | RoHS Status | Published | Factory Lead Time | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | DS Breakdown Voltage-Min | FET Technology | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Number of Terminals |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BSC016N04LS G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 8 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 100A | 400A | 0.0023Ohm | 295 mJ | 5 | ||||||||||||
| SPD18P06P G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | P-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | TO-252AB | 18.6A | 74.4A | 0.13Ohm | 150 mJ | 2 | ||||||||||||
| IPP60R160C6 | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | compliant | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 176W | 600V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 23.8A | 70A | 0.16Ohm | 497 mJ | 3 | ||||||||||||||
| IPD30N03S4L-09 | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | 42W | 30V | METAL-OXIDE SEMICONDUCTOR | TO-252 | 30A | 120A | 0.009Ohm | 28 mJ | 2 | ||||||||||||
| IPB065N15N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 150V | METAL-OXIDE SEMICONDUCTOR | TO-263 | 130A | 520A | 0.0065Ohm | 780 mJ | 6 | |||||||||||
| CWDM3011P TR13 | Central Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | compliant | |||||||||||||||||||||||||||||||||||||||||
| IPB160N04S3-H2 | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | ULTRA LOW RESISTANCE | compliant | 8541.29.00.95 | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | 214W | 40V | METAL-OXIDE SEMICONDUCTOR | TO-263 | 160A | 640A | 0.0021Ohm | 898 mJ | 6 | ||||||||||
| BSZ0901NS | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | compliant | e3 | Matte Tin (Sn) | YES | DUAL | NO LEAD | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | R-PDSO-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 22A | 160A | 0.0026Ohm | 150 mJ | 3 | ||||||||||||||
| IPP530N15N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | e3 | Tin (Sn) | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 150V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 21A | 84A | 0.053Ohm | 60 mJ | 3 | |||||||||||||
| IPB200N25N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 250V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 64A | 256A | 0.02Ohm | 320 mJ | 2 | |||||||||||
| IPP60R125C6 | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | compliant | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 219W | 600V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 30A | 89A | 0.125Ohm | 636 mJ | 3 | ||||||||||||||
| IPA50R250CP | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | compliant | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | N-CHANNEL | 33W | 500V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 13A | 31A | 0.25Ohm | 345 mJ | 3 | |||||||||||||
| BSC014N03MS G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 8 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 30A | 400A | 0.00175Ohm | 340 mJ | 5 | ||||||||||||
| BSC900N20NS3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 8 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 200V | METAL-OXIDE SEMICONDUCTOR | 15.2A | 61A | 0.09Ohm | 100 mJ | 5 | ||||||||||||
| NVD6415ANLT4G-VF01 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | RoHS Compliant | 2014 | 23 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | ||||||||||||||||||||||||||||||||||
| IPP600N25N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | e3 | Tin (Sn) | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 250V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 25A | 100A | 0.06Ohm | 210 mJ | 3 | |||||||||||||
| CEDM8001VL TR | Central Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | 8541.21.00.95 | YES | BOTTOM | NO LEAD | 1 | R-PBCC-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 0.1A | 12Ohm | 3 | ||||||||||||||||||||||
| CEDM7004VL TR | Central Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | compliant | |||||||||||||||||||||||||||||||||||||||||
| IPA50R199CP | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | compliant | 8541.29.00.95 | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | N-CHANNEL | 34W | 500V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 17A | 40A | 0.199Ohm | 436 mJ | 3 | ||||||||||||
| BSF030NE2LQ | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 3 (168 Hours) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | 8541.29.00.95 | e4 | Silver/Nickel (Ag/Ni) | YES | BOTTOM | NO LEAD | 2 | 150°C | -40°C | 1 | Not Qualified | R-MBCC-N2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 28W | 25V | METAL-OXIDE SEMICONDUCTOR | 75A | 300A | 0.0041Ohm | 50 mJ | 2 | |||||||||||
| SPB16N50C3 | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | AVALANCHE RATED | compliant | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 160W | 500V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 16A | 48A | 0.28Ohm | 460 mJ | 2 | ||||||||||
| SPA07N60C3 | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | AVALANCHE RATED | compliant | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | N-CHANNEL | 32W | 600V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 4.3A | 21.9A | 0.6Ohm | 230 mJ | 3 | ||||||||||||
| IPD034N06N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | TO-252AA | 100A | 400A | 0.0034Ohm | 149 mJ | 2 | |||||||||||
| PMXB40UNE | Nexperia |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | RoHS Compliant | icon-pbfree yes | compliant | e3 | Tin (Sn) | ||||||||||||||||||||||||||||||||||||
| IPB049NE7N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Powers | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 150W | 75V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 80A | 320A | 0.0049Ohm | 370 mJ | 2 | |||||||||
| BSZ16DN25NS3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | NO LEAD | NOT SPECIFIED | 8 | 150°C | NOT SPECIFIED | 1 | Not Qualified | S-PDSO-N5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 250V | METAL-OXIDE SEMICONDUCTOR | 10.9A | 44A | 0.165Ohm | 120 mJ | 5 | ||||||||||||
| SPD04N50C3 | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | AVALANCHE RATED | compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 50W | 500V | METAL-OXIDE SEMICONDUCTOR | TO-252 | 4.5A | 13.5A | 0.95Ohm | 130 mJ | 2 | |||||||||
| BSZ900N15NS3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | NO LEAD | 8 | 150°C | -55°C | 1 | Not Qualified | S-PDSO-N5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 38W | 150V | METAL-OXIDE SEMICONDUCTOR | 13A | 52A | 0.09Ohm | 30 mJ | 5 | ||||||||||||
| IPB320N20N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 200V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 34A | 136A | 0.032Ohm | 190 mJ | 2 | ||||||||||
| IRFNL210BTA_FP001 | Fairchild Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | NOT APPLICABLE | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | compliant | e3 | Matte Tin (Sn) | NO | BOTTOM | THROUGH-HOLE | NOT APPLICABLE | 3 | 150°C | NOT APPLICABLE | 1 | FET General Purpose Power | Not Qualified | O-PBCY-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 3.1W | 200V | METAL-OXIDE SEMICONDUCTOR | TO-92 | 1A | 1.5Ohm | 9 pF | 3 |
