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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| EPC2001C | EPC | $1.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | GaNFET (Gallium Nitride) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/epc-epc2001c-datasheets-9935.pdf | Die | 12 Weeks | Die Outline (11-Solder Bar) | 900pF | 36A | 100V | N-Channel | 900pF @ 50V | 7mOhm @ 25A, 5V | 2.5V @ 5mA | 36A Ta | 9nC @ 5V | 7 mΩ | 5V | +6V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP40NF10L | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp40nf10l-datasheets-0074.pdf | 100V | 40A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 12 Weeks | 4.535924g | No SVHC | 33MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP40N | 3 | Single | 150W | 1 | FET General Purpose Power | 25 ns | 82ns | 24 ns | 64 ns | 40A | 17V | SILICON | SWITCHING | 1.7V | 150W Tc | TO-220AB | 100V | N-Channel | 2300pF @ 25V | 33m Ω @ 20A, 10V | 2.5V @ 250μA | 40A Tc | 64nC @ 5V | 5V 10V | ±17V | ||||||||||||||||||||||||||||||||||||||
| IRL2505PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irl2505pbf-datasheets-0085.pdf | 55V | 104A | TO-220-3 | 10.5156mm | 15.24mm | 4.69mm | Lead Free | 3 | 12 Weeks | No SVHC | 8mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | NOT SPECIFIED | Single | NOT SPECIFIED | 200W | 1 | FET General Purpose Power | Not Qualified | 12 ns | 160ns | 84 ns | 43 ns | 104A | 16V | 55V | SILICON | DRAIN | SWITCHING | 2V | 200W Tc | TO-220AB | 210 ns | 90A | 500 mJ | 55V | N-Channel | 5000pF @ 25V | 2 V | 8m Ω @ 54A, 10V | 2V @ 250μA | 104A Tc | 130nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||
| STB37N60DM2AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, MDmesh™ DM2 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb37n60dm2ag-datasheets-0117.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | SINGLE | GULL WING | NOT SPECIFIED | STB37N | NOT SPECIFIED | 1 | R-PSSO-G2 | 28A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 210W Tc | 112A | 0.11Ohm | 650 mJ | N-Channel | 2400pF @ 100V | 110m Ω @ 14A, 10V | 5V @ 250μA | 28A Tc | 54nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| STP80NF70 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp80nf70-datasheets-9848.pdf | TO-220-3 | 3 | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | STP80N | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 17 ns | 60ns | 75 ns | 90 ns | 98A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 68V | 68V | 190W Tc | TO-220AB | 0.0098Ohm | 700 mJ | N-Channel | 2550pF @ 25V | 9.8m Ω @ 40A, 10V | 4V @ 250μA | 98A Tc | 75nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRL2910PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irl2910pbf-datasheets-9891.pdf | 100V | 55A | TO-220-3 | 10.5156mm | 8.77mm | 4.69mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 3 | 2.54mm | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | Single | 200W | 1 | FET General Purpose Power | 11 ns | 100ns | 55 ns | 49 ns | 55A | 16V | 100V | SILICON | DRAIN | SWITCHING | 2V | 200W Tc | TO-220AB | 350 ns | 48A | 520 mJ | 100V | N-Channel | 3700pF @ 25V | 2 V | 26m Ω @ 29A, 10V | 2V @ 250μA | 55A Tc | 140nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||
| STL18N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stl18n65m5-datasheets-9901.pdf | 8-PowerVDFN | 5.4mm | 1mm | 6.35mm | Lead Free | 5 | 17 Weeks | 240mOhm | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | DUAL | FLAT | STL18 | 2 | Single | 57W | 1 | R-PDSO-F5 | 36 ns | 7ns | 11 ns | 9 ns | 15A | 25V | SILICON | DRAIN | SWITCHING | 57W Tc | 60A | 650V | N-Channel | 1240pF @ 100V | 240m Ω @ 7.5A, 10V | 5V @ 250μA | 15A Tc | 31nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C404NLAFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-nvmfs5c404nlaft1g-datasheets-9931.pdf | 8-PowerTDFN, 5 Leads | 11 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | not_compliant | e3 | Tin (Sn) | 260 | 10 | 40V | 200W Tc | N-Channel | 12168pF @ 25V | 0.67m Ω @ 50A, 10V | 2V @ 250μA | 370A Tc | 81nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOB290L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 16 Weeks | 3 | 500W | 1 | FET General Purpose Power | 140A | 20V | Single | 100V | 2.1W Ta 500W Tc | N-Channel | 9550pF @ 50V | 3.2m Ω @ 20A, 10V | 4.1V @ 250μA | 18A Ta 140A Tc | 126nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLS4030TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irls4030trlpbf-datasheets-9912.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.572mm | 9.65mm | Lead Free | 2 | 12 Weeks | Unknown | 3.9MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | Single | 370W | 1 | FET General Purpose Power | R-PSSO-G2 | 74 ns | 330ns | 170 ns | 110 ns | 180A | 16V | SILICON | SWITCHING | 370W Tc | 100V | N-Channel | 11360pF @ 50V | 2.5 V | 4.3m Ω @ 110A, 10V | 2.5V @ 250μA | 180A Tc | 130nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
| IPB015N04NGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb015n04ngatma1-datasheets-9679.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 13 Weeks | 3 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 250W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 40 ns | 10ns | 13 ns | 64 ns | 120A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250W Tc | 400A | 865 mJ | N-Channel | 20000pF @ 20V | 1.5m Ω @ 100A, 10V | 4V @ 200μA | 120A Tc | 250nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRL7472L1TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irl7472l1trpbf-datasheets-9686.pdf | DirectFET™ Isometric L8 | 9.15mm | 740μm | 7.1mm | Lead Free | 9 | 12 Weeks | No SVHC | 2 | EAR99 | BOTTOM | NO LEAD | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 3.8W | 1 | 175°C | R-XBCC-N9 | 68 ns | 174 ns | 68A | 20V | SILICON | DRAIN | SWITCHING | 1V | 3.8W Ta 341W Tc | 0.00045Ohm | 765 mJ | 40V | N-Channel | 20082pF @ 25V | 0.59m Ω @ 195A, 10V | 2.5V @ 250μA | 375A Tc | 330nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| STB33N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stb33n60m2-datasheets-9588.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 26 Weeks | 3.949996g | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STB33N | 1 | Single | NOT SPECIFIED | 190W | 16 ns | 9.6ns | 9 ns | 109 ns | 26A | 25V | 600V | 190W Tc | N-Channel | 1781pF @ 100V | 125m Ω @ 13A, 10V | 4V @ 250μA | 26A Tc | 45.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB65R150CFDATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb65r150cfdatma1-datasheets-9715.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.7mm | Contains Lead | 2 | 18 Weeks | no | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | 1 | NOT SPECIFIED | 195.3W | 1 | 150°C | R-PSSO-G2 | 12.4 ns | 7.6ns | 5.6 ns | 52.8 ns | 22.4A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 195.3W Tc | 72A | 650V | N-Channel | 2340pF @ 100V | 150m Ω @ 9.3A, 10V | 4.5V @ 900μA | 22.4A Tc | 86nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| NTMFS5C604NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-ntmfs5c604nlt1g-datasheets-9709.pdf | 8-PowerTDFN, 5 Leads | 5.9mm | 1.1mm | 4.9mm | Lead Free | 5 | 18 Weeks | No SVHC | 5 | ACTIVE (Last Updated: 23 hours ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | 260 | 1 | Single | 30 | 3.9W | 1 | FET General Purpose Power | 175°C | 32.9 ns | 79.1ns | 81.3 ns | 60.3 ns | 40A | 20V | SILICON | DRAIN | 2V | 3.9W Ta 200W Tc | 276A | 900A | 776 mJ | 60V | N-Channel | 8900pF @ 25V | 1.2m Ω @ 50A, 10V | 2V @ 250μA | 38A Ta | 120nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| STB46NF30 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stb46nf30-datasheets-9739.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) - annealed | YES | NOT SPECIFIED | STB46N | NOT SPECIFIED | FET General Purpose Power | Single | 300V | 300W Tc | 42A | N-Channel | 3200pF @ 25V | 75m Ω @ 17A, 10V | 4V @ 250μA | 42A Tc | 90nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB4615PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfb4615pbf-datasheets-9788.pdf | TO-220-3 | 10.668mm | 16.51mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 39MOhm | 3 | EAR99 | No | Single | 144W | 1 | FET General Purpose Power | 15 ns | 35ns | 20 ns | 25 ns | 35A | 20V | 150V | SILICON | SWITCHING | 3V | 144W Tc | TO-220AB | 150V | N-Channel | 1750pF @ 50V | 3 V | 39m Ω @ 21A, 10V | 5V @ 100μA | 35A Tc | 26nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FDMS86550 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdms86550-datasheets-9809.pdf | 8-PowerTDFN | 5.1mm | 1.05mm | 6.25mm | 5 | 13 Weeks | 56.5mg | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | not_compliant | e3 | DUAL | NO LEAD | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | R-PDSO-N5 | 43 ns | 27ns | 11 ns | 42 ns | 155A | 20V | SILICON | DRAIN | SWITCHING | 2.7W Ta 156W Tc | MO-240AA | 32A | 320A | 937 mJ | 60V | N-Channel | 11530pF @ 30V | 1.65m Ω @ 32A, 10V | 4.5V @ 250μA | 32A Ta 155A Tc | 154nC @ 10V | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRF4905PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf4905pbf-datasheets-9817.pdf | -55V | -74A | TO-220-3 | 10.5156mm | 19.8mm | 4.69mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 3 | 2.54mm | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 250 | 1 | Single | 30 | 200W | 1 | Other Transistors | 175°C | 18 ns | 99ns | 96 ns | 61 ns | -74A | 20V | -55V | SILICON | DRAIN | SWITCHING | 55V | -4V | 200W Tc | TO-220AB | 130 ns | 64A | 260A | 0.02Ohm | -55V | P-Channel | 3400pF @ 25V | -4 V | 20m Ω @ 38A, 10V | 4V @ 250μA | 74A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IRL540PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irl540pbf-datasheets-9841.pdf | TO-220-3 | 10.54mm | 8.76mm | 4.7mm | Lead Free | 3 | 8 Weeks | 6.000006g | Unknown | 77mOhm | 3 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | No | e3 | MATTE TIN | 3 | 1 | Single | 150W | 1 | 8.5 ns | 170ns | 80 ns | 35 ns | 28A | 10V | SILICON | SWITCHING | 100V | 2V | 150W Tc | TO-220AB | 260 ns | 440 mJ | N-Channel | 2200pF @ 25V | 2 V | 77m Ω @ 17A, 5V | 2V @ 250μA | 28A Tc | 64nC @ 5V | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||
| SPB17N80C3ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-spb17n80c3atma1-datasheets-9660.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 18 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 227W Tc | 17A | 51A | 0.29Ohm | 670 mJ | N-Channel | 2300pF @ 100V | 290m Ω @ 11A, 10V | 3.9V @ 1mA | 17A Tc | 177nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF9530SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-irf9530spbf-datasheets-9674.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 8 Weeks | 1.437803g | Unknown | 300mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 40 | 3.7W | 1 | Other Transistors | R-PSSO-G2 | 12 ns | 52ns | 39 ns | 31 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 100V | 4V | 3.7W Ta 88W Tc | 48A | 400 mJ | P-Channel | 860pF @ 25V | -4 V | 300m Ω @ 7.2A, 10V | 4V @ 250μA | 12A Tc | 38nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| STP75NF75 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp75nf75-datasheets-9543.pdf | 75V | 80A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 12 Weeks | 9.071847g | No SVHC | 11mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | STP75N | 3 | Single | 300W | 1 | FET General Purpose Power | 25 ns | 100ns | 30 ns | 66 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 3V | 300W Tc | TO-220AB | 75A | 700 mJ | 75V | N-Channel | 3700pF @ 25V | 11m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| FDB8832 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdb8832-datasheets-9549.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 11.33mm | Lead Free | 2 | 10 Weeks | 1.31247g | No SVHC | 2 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 24 ns | 73ns | 38 ns | 54 ns | 80A | 20V | 30V | SILICON | DRAIN | SWITCHING | 1.6V | 300W Tc | 59 ns | 34A | 30V | N-Channel | 11400pF @ 15V | 1.6 V | 1.9m Ω @ 80A, 10V | 3V @ 250μA | 34A Ta 80A Tc | 265nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| STB28N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb28n60dm2-datasheets-9562.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 17 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | STB28N | 21A | 600V | 4V | 170W Tc | N-Channel | 1500pF @ 100V | 160m Ω @ 10.5A, 10V | 5V @ 250μA | 21A Tc | 34nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDBL86561-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdbl86561f085-datasheets-9592.pdf | 8-PowerSFN | 2 | 6 Weeks | yes | not_compliant | e3 | Tin (Sn) | YES | SINGLE | FLAT | 245 | NOT SPECIFIED | 1 | R-PSSO-F2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 429W Tj | MO-299A | 300A | 0.0022Ohm | 1167 mJ | N-Channel | 13650pF @ 30V | 1.1m Ω @ 80A, 10V | 4V @ 250μA | 300A Tc | 220nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB110N15A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/onsemiconductor-fdb110n15a-datasheets-9628.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 8 Weeks | 1.31247g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 234W | 1 | FET General Purpose Power | R-PSSO-G2 | 25 ns | 26ns | 14 ns | 46 ns | 92A | 20V | SILICON | DRAIN | SWITCHING | 234W Tc | 150V | N-Channel | 4510pF @ 75V | 11m Ω @ 92A, 10V | 4V @ 250μA | 92A Tc | 61nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FDB8441 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdb8441-datasheets-9448.pdf | 40V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 8 Weeks | 1.31247g | No SVHC | 2.5MOhm | 2 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 23 ns | 24ns | 17.9 ns | 75 ns | 28A | 20V | 40V | SILICON | DRAIN | SWITCHING | 2.8V | 300W Tc | 52 ns | 947 mJ | 40V | N-Channel | 15000pF @ 25V | 2.8 V | 2.5m Ω @ 80A, 10V | 4V @ 250μA | 28A Ta 120A Tc | 280nC @ 10V | 10V | ±20V |
