Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Evaluation Kit | Nominal Supply Current | JESD-609 Code | Terminal Finish | Polarity | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Output Voltage | Voltage - Input | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Function | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | High Level Output Current | Threshold Voltage | Input Voltage (Max) | Power Dissipation-Max | Recovery Time | Number of Inputs | Output | Utilized IC / Part | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Current - Output | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Supplied Contents | Main Purpose | Signal Current-Max | Nominal Vgs | Board Type | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Outputs and Type | Regulator Topology | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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IRFB17N50LPBF | Vishay Siliconix | $3.32 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfb17n50lpbf-datasheets-5152.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 280mOhm | 3 | No | 1 | Single | 220W | 1 | TO-220AB | 2.76nF | 21 ns | 51ns | 28 ns | 50 ns | 16A | 30V | 500V | 5V | 220W Tc | 250 ns | 320mOhm | N-Channel | 2760pF @ 25V | 5 V | 320mOhm @ 9.9A, 10V | 5V @ 250μA | 16A Tc | 130nC @ 10V | 320 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG636EN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | 500nA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg636ent1e4-datasheets-4736.pdf | 16-WFQFN | 2.6mm | 750μm | 1.8mm | 500nA | 16 | 14 Weeks | 12V | 2.7V | 170Ohm | 16 | yes | No | 2 | 525mW | QUAD | 5V | DG636 | 16 | 2 | 525mW | 610MHz | 60 ns | 52 ns | 5V | Dual, Single | 2.7V | -5V | 4 | 5V | 2 | 115Ohm | 58 dB | 1Ohm | BREAK-BEFORE-MAKE | 76ns | 90ns | 2.7V~12V ±2.7V~5V | 100A | 2:1 | SPDT | 100pA | 2.1pF 4.2pF | 60ns, 52ns | 0.1pC | 1 Ω | -88dB @ 10MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLZ24LPBF | Vishay Siliconix | $3.97 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlz24lpbf-datasheets-7621.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.41mm | 9.01mm | 4.7mm | 3 | 8 Weeks | 6.000006g | Unknown | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | 260 | 3 | 1 | Single | 40 | 1 | FET General Purpose Power | 11 ns | 110ns | 41 ns | 23 ns | 17A | 10V | SILICON | DRAIN | SWITCHING | 3.7W Ta 60W Tc | 68A | 60V | N-Channel | 870pF @ 25V | 100m Ω @ 10A, 5V | 2V @ 250μA | 17A Tc | 18nC @ 5V | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG2015DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2015dnt1e4-datasheets-5327.pdf | 16-VQFN Exposed Pad | 4mm | 950μm | 4mm | 1μA | 16 | 57.09594mg | 3.3V | 2.7V | 1.6Ohm | 16 | yes | 2 | e4 | PALLADIUM GOLD OVER NICKEL | 1.88W | QUAD | NO LEAD | 260 | 3V | 0.65mm | DG2015 | 16 | 2 | 30 | Multiplexer or Switches | 3V | 2 | Not Qualified | 65 ns | 60 ns | Single | SEPARATE OUTPUT | 1.6Ohm | 67 dB | 0.15Ohm | BREAK-BEFORE-MAKE | 67ns | 2:2 | 2.7V~3.3V | DPDT | 1nA | 67pF | 40ns, 35ns | 7pC | 150m Ω | -70dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIHA11N80E-GE3 | Vishay Siliconix | $12.96 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha11n80ege3-datasheets-8129.pdf | TO-220-3 Full Pack | 14 Weeks | TO-220 Full Pack | 800V | 34W Tc | 380mOhm | N-Channel | 1670pF @ 100V | 440mOhm @ 5.5A, 10V | 4V @ 250μA | 12A Tc | 88nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG2512DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 10nA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2511dnt1e4-datasheets-5355.pdf | 6-UFDFN | 1.2mm | 550μm | 1mm | 1μA | 6 | 57.09594mg | 5.5V | 1.8V | 1.3Ohm | 6 | yes | unknown | 1 | e4 | NICKEL PALLADIUM GOLD | 160mW | DUAL | NO LEAD | 260 | 3V | 0.4mm | DG251* | 6 | 1 | 40 | Multiplexer or Switches | 3/5V | 1 | Not Qualified | SPST | 35 ns | 31 ns | Single | 1.3Ohm | 58 dB | 0.15Ohm | BREAK-BEFORE-MAKE | 34ns | 49ns | NC | 1:1 | 1.8V~5.5V | SPST - NC | 2nA | 19pF | 35ns, 31ns | 14pC | 150m Ω (Max) | -64dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIA468DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sia468djt1ge3-datasheets-9124.pdf | PowerPAK® SC-70-6 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 30V | 19W Tc | N-Channel | 1290pF @ 15V | 8.4m Ω @ 11A, 10V | 2.4V @ 250μA | 37.8A Tc | 16nC @ 4.5V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG2302DL-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 900μA | ROHS3 Compliant | 2007 | /files/vishaysiliconix-dg2302dlt1e3-datasheets-5389.pdf | 5-TSSOP, SC-70-5, SOT-353 | 2mm | 1mm | 1.25mm | 1.5mA | 5 | 19.986414mg | 5.5V | 4V | 50Ohm | 5 | yes | No | 1 | e3 | MATTE TIN | 250mW | DUAL | GULL WING | 260 | 5V | DG2302 | 5 | 1 | 40 | Multiplexer or Switches | 5V | 1 | SPST | 5 ns | 3.9 ns | Single | 7Ohm | 1:1 | 4V~5.5V | SPST - NO | 10μA | 5pF | 5ns, 3.9ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI3417DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si3417dvt1ge3-datasheets-1144.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 14 Weeks | 19.986414mg | 6 | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 2W | 1 | 42 ns | 35ns | 16 ns | 40 ns | 8A | 20V | SILICON | SWITCHING | 30V | 2W Ta 4.2W Tc | 8A | 0.0252Ohm | -30V | P-Channel | 1350pF @ 15V | 25.2m Ω @ 7.3A, 10V | 3V @ 250μA | 8A Ta | 50nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG2517DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 10nA | ROHS3 Compliant | 2015 | /files/vishaysiliconix-dg2517edqt1ge3-datasheets-6857.pdf | 10-VFDFN Exposed Pad | 3mm | 880μm | 3mm | 1μA | 50.008559mg | No SVHC | 5.5V | 1.8V | 4Ohm | 10 | yes | unknown | 1.191W | DG2517 | 10 | 1.191W | 242MHz | 25 ns | 20 ns | Single | 4 | 2 | 4Ohm | 2:1 | 1.8V~5.5V | SPDT | 1nA | 8pF | 25ns, 20ns | 2pC | 100m Ω | -73dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SQ2351ES-T1_GE3 | Vishay Siliconix | $1.11 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq2351est1ge3-datasheets-2814.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 12 Weeks | 115mOhm | 3 | SOT-23-3 (TO-236) | 20 ns | 18ns | 8 ns | 19 ns | 3.2A | 12V | 20V | 2W Tc | 115mOhm | P-Channel | 330pF @ 10V | 115mOhm @ 2.4A, 4.5V | 1.5V @ 250μA | 3.2A Tc | 5.5nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG2742DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | CMOS | 10nA | 1.1mm | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg2743dst1e3-datasheets-5403.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad | 3mm | 3mm | 1μA | 8 | 3.6V | 1.5V | 8Ohm | 8 | yes | VIDEO APPLICATION | unknown | 2 | 10nA | e3 | MATTE TIN | DUAL | GULL WING | 260 | 1.8V | 0.65mm | DG2742 | 8 | 1 | 40 | Multiplexer or Switches | Not Qualified | SPST | 45 ns | 40 ns | Single | 2 | SEPARATE OUTPUT | 800mOhm | 55 dB | 0.05Ohm | BREAK-BEFORE-MAKE | 50ns | NC | 1:1 | 1.5V~3.6V | SPST - NC | 1nA | 81pF | 30ns, 28ns | 5.8pC | -89dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIS782DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/vishaysiliconix-sis782dnt1ge3-datasheets-4202.pdf | PowerPAK® 1212-8 | 5 | 14 Weeks | EAR99 | unknown | YES | DUAL | C BEND | NOT SPECIFIED | 8 | 1 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | S-XDSO-C5 | 8 ns | 13ns | 9 ns | 14 ns | 16A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 41W Tc | 50A | 0.0095Ohm | N-Channel | 1025pF @ 15V | 9.5m Ω @ 10A, 10V | 2.3V @ 250μA | 16A Tc | 30.5nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG3517DB-T5-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 1μA | 0.753mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg3516dbt5e1-datasheets-4556.pdf | 10-WFBGA | 1μA | 10 | 5.5V | 1.8V | 2.9Ohm | 10 | yes | No | 2 | e1 | TIN SILVER COPPER | 457mW | BOTTOM | BALL | 260 | 3V | 0.5mm | DG3517 | 10 | 1 | 40 | Multiplexer or Switches | 3/5V | 2 | 300MHz | 51 ns | 45 ns | Single | SEPARATE OUTPUT | 2.9Ohm | 54 dB | 0.25Ohm | BREAK-BEFORE-MAKE | 46ns | NC | 2:1 | 1.8V~5.5V | SPDT | 2nA | 12pF | 45ns, 42ns | 1pC | 250m Ω (Max) | -78dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIS472DN-T1-GE3 | Vishay Siliconix | $1.75 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis472dnt1ge3-datasheets-5946.pdf | PowerPAK® 1212-8 | 14 Weeks | PowerPAK® 1212-8 | 30V | 3.5W Ta 28W Tc | N-Channel | 997pF @ 15V | 8.9mOhm @ 15A, 10V | 2.5V @ 250μA | 20A Tc | 30nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG641DJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 3.5mA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg641dy-datasheets-2728.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 15V | 500MHz | 6mA | 16 | 12 Weeks | 1.627801g | 21V | 10V | 15Ohm | 16 | yes | VIDEO APPLICATION | unknown | 4 | e3 | Matte Tin (Sn) | 470mW | NOT SPECIFIED | 15V | DG641 | 16 | 1 | AUDIO/VIDEO SWITCH | NOT SPECIFIED | Multiplexer or Switches | 15-3V | 4 | Not Qualified | SPST | 70 ns | 50 ns | 15V | Dual, Single | 10V | -3V | SEPARATE OUTPUT | 15Ohm | 60 dB | 1Ohm | BREAK-BEFORE-MAKE | 85ns | NC | 3V~15V ±3V~15V | 1:1 | SPST - NO | 10nA | 12pF 12pF | 70ns, 50ns | 19pC | 1 Ω | -87dB @ 5MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI4431BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4431bdyt1e3-datasheets-6831.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 30mOhm | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.5W | 1 | 150°C | 10 ns | 10ns | 47 ns | 70 ns | -7.5A | 20V | -30V | SILICON | 30V | -1V | 1.5W Ta | 5.7A | -30V | P-Channel | -1 V | 30m Ω @ 7.5A, 10V | 3V @ 250μA | 5.7A Ta | 20nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG643DY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 3.5mA | ROHS3 Compliant | /files/vishaysiliconix-dg641dy-datasheets-2728.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | 500MHz | Lead Free | 6mA | 16 | 665.986997mg | Unknown | 18V | 10V | 15Ohm | 8 | yes | VIDEO APPLICATION | Tin | 2 | 3.5mA | e3 | Non-Inverting | 600mW | GULL WING | 260 | 15V | DG643 | 16 | 1 | AUDIO/VIDEO SWITCH | 40 | 600mW | Multiplexer or Switches | 15-3V | 2 | Not Qualified | R-PDSO-G16 | 70 ns | 50 ns | 15V | 12V | Dual, Single | 10V | -3V | 75mA | 4 | 15Ohm | 15Ohm | 60 dB | 1Ohm | BREAK-BEFORE-MAKE | 3V~15V ±3V~15V | 2:1 | SPDT | 10nA | 12pF 12pF | 70ns, 50ns | 19pC | 1 Ω | -87dB @ 5MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI7686DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7686dpt1e3-datasheets-7859.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | 9.5mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 5W | 1 | FET General Purpose Power | R-XDSO-C5 | 13 ns | 16ns | 8 ns | 23 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 5W Ta 37.9W Tc | 50A | 5 mJ | N-Channel | 1220pF @ 15V | 9.5m Ω @ 13.8A, 10V | 3V @ 250μA | 35A Tc | 26nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG441LDQ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | 85°C | -40°C | 10μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg441ldy-datasheets-2707.pdf | 16-TSSOP (0.173, 4.40mm Width) | 12 Weeks | 12V | 2.7V | 35Ohm | 16 | DG441 | 4 | 450mW | 4 | 16-TSSOP | 280MHz | SPST | 6V | 5V | Dual, Single | 3V | 4 | 4 | 30Ohm | 2.7V~12V ±3V~6V | 1:1 | SPST - NC | 1nA | 5pF 6pF | 60ns, 35ns | 5pC | 100mOhm | -95dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI2319DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si2319dst1e3-datasheets-9020.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 14 Weeks | 1.437803g | Unknown | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | Other Transistors | 7 ns | 15ns | 25 ns | 25 ns | -2.3A | 20V | SILICON | SWITCHING | 40V | 40V | -3V | 750mW Ta | 0.082Ohm | P-Channel | 470pF @ 20V | -3 V | 82m Ω @ 3A, 10V | 3V @ 250μA | 2.3A Ta | 17nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG4051AEQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | -1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg4051aent1e4-datasheets-4533.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.07mm | 920μm | 4.4mm | 730MHz | Lead Free | 1μA | 16 | 172.98879mg | Unknown | 12V | 2.7V | 100Ohm | 16 | yes | 1 | e3 | MATTE TIN | 450mW | GULL WING | 260 | 3V | 0.65mm | DG4051 | 16 | 8 | 40 | 450mW | 1 | Not Qualified | 330MHz | 151 ns | 138 ns | 5V | 3V | Multiplexer | 172 ns | Dual, Single | 2.5V | -3V | 8 | 100Ohm | 67 dB | 3Ohm | BREAK-BEFORE-MAKE | 2.7V~12V ±2.5V~5V | 8:1 | 1nA | 3pF 12pF | 108ns, 92ns | 0.25pC | 3 Ω | -67dB @ 10MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFR220TRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irfu220pbf-datasheets-5110.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 1.437803g | 800mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 10 | 2.5W | 1 | FET General Purpose Powers | R-PSSO-G2 | 7.2 ns | 22ns | 13 ns | 19 ns | 4.8A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 42W Tc | 200V | N-Channel | 260pF @ 25V | 800m Ω @ 2.9A, 10V | 4V @ 250μA | 4.8A Tc | 14nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG9425DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BICMOS | 5μA | ROHS3 Compliant | 2015 | /files/vishaysiliconix-dg9424dqt1-datasheets-2818.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | 9V | Lead Free | 1μA | 16 | 172.98879mg | No SVHC | 12V | 2.7V | 3Ohm | 16 | No | 4 | 20nA | e3 | Matte Tin (Sn) | 450mW | GULL WING | 0.635mm | DG9425 | DPDT | 450mW | Multiplexer or Switches | SPST | 56 ns | 42 ns | 6V | 5V | Dual, Single | 3V | 4 | SEPARATE OUTPUT | 3Ohm | 1.7Ohm | BREAK-BEFORE-MAKE | NC | 3V~16V ±3V~8V | 1:1 | SPST - NC | 1nA | 49pF 37pF | 51ns, 35ns | 38pC | -77dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI8806DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si8806dbt2e1-datasheets-0645.pdf | 4-XFBGA | 840μm | 213μm | 840μm | Lead Free | 44 Weeks | No SVHC | 4 | EAR99 | No | e3 | Matte Tin (Sn) | 1 | Single | 900mW | 10 ns | 20ns | 12 ns | 30 ns | 3.9A | 8V | 12V | 400mV | 500mW Ta | N-Channel | 43m Ω @ 1A, 4.5V | 1V @ 250μA | 17nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIP32409EVB | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sip32409dnpt1ge4-datasheets-0144.pdf | 8 Weeks | Power Distribution Switch (Load Switch) | SIP32409 | Board(s) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIRA72DP-T1-GE3 | Vishay Siliconix | $1.35 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira72dpt1ge3-datasheets-2032.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 40V | 56.8W Tc | N-Channel | 3240pF @ 20V | 3.5m Ω @ 10A, 10V | 2.4V @ 250μA | 60A Tc | 30nC @ 4.5V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIP12107DB | Vishay Siliconix |
Min: 1 Mult: 1 |
download | microBUCK® | 1 (Unlimited) | Non-RoHS Compliant | 2012 | /files/vishaysiliconix-sic401db-datasheets-6199.pdf | Lead Free | 8 Weeks | Yes | 3.3V | 2.8V~5.5V | SiP12107 | 3A | Board(s) | DC/DC, Step Down | Fully Populated | 1, Non-Isolated | Buck | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIR416DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir416dpt1ge3-datasheets-6188.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 14 Weeks | 506.605978mg | 8 | 1 | Single | 5.2W | 1 | PowerPAK® SO-8 | 3.35nF | 28 ns | 85ns | 40 ns | 42 ns | 50A | 20V | 40V | 5.2W Ta 69W Tc | 3.1mOhm | 40V | N-Channel | 3350pF @ 20V | 3.8mOhm @ 15A, 10V | 2.5V @ 250μA | 50A Tc | 90nC @ 10V | 3.8 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIC466EVB-D | Vishay Siliconix |
Min: 1 Mult: 1 |
download | /files/vishaysiliconix-sic469edt1ge3-datasheets-4516.pdf | 17 Weeks |
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