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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Interface | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Nominal Input Voltage | Current | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | Number of Functions | JESD-609 Code | Feature | Terminal Finish | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Min (Vsup) | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Max Output Current | Output Type | Voltage - Load | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Threshold Voltage | Switch Type | Output Configuration | Fault Protection | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | Voltage - Supply (Vcc/Vdd) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Typ) | Ratio - Input:Output | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI7540ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si7540adpt1ge3-datasheets-7127.pdf | PowerPAK® SO-8 Dual | 6 | 14 Weeks | EAR99 | YES | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 3.5W | 8A | 35A | 0.015Ohm | N and P-Channel | 1310pF @ 10V | 28m Ω @ 12A, 10V | 1.4V @ 250μA | 12A 9A | 48nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50N03-12P-E3 | Vishay Siliconix | $2.88 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n0312pe3-datasheets-3274.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 3 | No | Single | 46.8mW | 1 | TO-252, (D-Pak) | 1.6nF | 9 ns | 15ns | 12 ns | 20 ns | 17.5A | 20V | 30V | 3V | 6.5W Ta 46.8W Tc | 12mOhm | N-Channel | 1600pF @ 25V | 12mOhm @ 20A, 10V | 3V @ 250μA | 42nC @ 10V | 12 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM110P08-11L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sum110p0811le3-datasheets-0300.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 5.08mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.437803g | No SVHC | 11.1mOhm | 3 | yes | EAR99 | Tin | No | e3 | GULL WING | 4 | 1 | Single | 13.6W | 1 | Other Transistors | 175°C | R-PSSO-G2 | 20 ns | 330ns | 550 ns | 135 ns | -11A | 20V | SILICON | DRAIN | SWITCHING | 80V | -3V | 13.6W Ta 375W Tc | -80V | P-Channel | 10850pF @ 40V | -3 V | 11.2m Ω @ 20A, 10V | 3V @ 250μA | 110A Tc | 270nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM70N04-07L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum70n0407le3-datasheets-3318.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | 2 | 1.437803g | 3 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | NOT SPECIFIED | 4 | 1 | Single | NOT SPECIFIED | 3.75W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 11 ns | 20ns | 15 ns | 40 ns | 70A | 20V | SILICON | SWITCHING | 3.75W Ta 100W Tc | 0.0074Ohm | 40V | N-Channel | 2800pF @ 25V | 7.4m Ω @ 30A, 10V | 3V @ 250μA | 70A Tc | 75nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4900DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4900dyt1e3-datasheets-5430.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 186.993455mg | Unknown | 8 | EAR99 | No | e3 | PURE MATTE TIN | 2W | GULL WING | 260 | SI4900 | 8 | 2 | Dual | 30 | 2W | 2 | 15 ns | 65ns | 10 ns | 15 ns | 5.3A | 20V | SILICON | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 2.5V | 3.1W | 2 N-Channel (Dual) | 665pF @ 15V | 58m Ω @ 4.3A, 10V | 3V @ 250μA | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP90N08-7M7P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup90n087m7pe3-datasheets-3459.pdf | TO-220-3 | 3 | 3 | EAR99 | No | 3 | Single | 3.75W | 1 | FET General Purpose Powers | 17 ns | 5ns | 6 ns | 22 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 3.75W Ta 208.3W Tc | TO-220AB | 0.0077Ohm | 75V | N-Channel | 4250pF @ 30V | 7.7m Ω @ 20A, 10V | 4.5V @ 250μA | 90A Tc | 105nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ960EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sqj960ept1ge3-datasheets-5136.pdf | PowerPAK® SO-8 Dual | Lead Free | 12 Weeks | 506.605978mg | Unknown | 40mOhm | 8 | No | 34W | 2 | Dual | 34W | 1 | PowerPAK® SO-8 Dual | 735pF | 6 ns | 8ns | 7 ns | 19 ns | 8A | 20V | 60V | 2V | 34W | 30mOhm | 2 N-Channel (Dual) | 735pF @ 25V | 36mOhm @ 5.3A, 10V | 2.5V @ 250μA | 8A | 20nC @ 10V | Logic Level Gate | 36 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP0202K-T1-GE3 | Vishay Siliconix | $0.03 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-tp0202kt1e3-datasheets-6401.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | Unknown | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 3 | Single | 350mW | 1 | Other Transistors | 9 ns | 6ns | 20 ns | 30 ns | -385mA | 20V | SILICON | SWITCHING | 30V | -2V | 350mW Ta | P-Channel | 31pF @ 15V | -2 V | 1.4 Ω @ 500mA, 10V | 3V @ 250μA | 385mA Ta | 1nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2319CDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si2319cdst1ge3-datasheets-7326.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 77mOhm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.25W | 1 | Other Transistors | 150°C | 40 ns | 18 ns | -4.4A | 20V | SILICON | SWITCHING | 40V | -2.5V | 1.25W Ta 2.5W Tc | -40V | P-Channel | 595pF @ 20V | -1.2 V | 77m Ω @ 3.1A, 10V | 2.5V @ 250μA | 4.4A Tc | 21nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP75N03-04-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sup75n0304e3-datasheets-3010.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 3 | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | Single | 187W | 1 | FET General Purpose Power | 20 ns | 40ns | 95 ns | 190 ns | 75A | 20V | SILICON | DRAIN | 3.7W Ta 187W Tc | TO-220AB | 250A | 0.006Ohm | 280 mJ | 30V | N-Channel | 10742pF @ 25V | 4m Ω @ 75A, 10V | 3V @ 250μA | 75A Tc | 250nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4435DDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4435ddyt1ge3-datasheets-8870.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 24MOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.5W | 1 | 150°C | 10 ns | 35ns | 16 ns | 45 ns | -8.1A | 20V | SILICON | SWITCHING | 30V | -3V | 2.5W Ta 5W Tc | -30V | P-Channel | 1350pF @ 15V | 24m Ω @ 9.1A, 10V | 3V @ 250μA | 11.4A Tc | 50nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP40N10-30-E3 | Vishay Siliconix | $0.24 |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup40n1030e3-datasheets-3260.pdf | TO-220-3 | Lead Free | 3 | 30mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | Single | 3.75W | 1 | FET General Purpose Power | 11 ns | 12ns | 12 ns | 30 ns | 40A | 20V | SILICON | SWITCHING | 3.75W Ta 107W Tc | TO-220AB | 75A | 100V | N-Channel | 2400pF @ 25V | 30m Ω @ 15A, 10V | 4V @ 250μA | 40A Tc | 60nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR662DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sir662dpt1ge3-datasheets-0189.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 2.7mOhm | 8 | yes | EAR99 | No | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 6.25W | 1 | FET General Purpose Powers | R-XDSO-C5 | 60A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 1V | 6.25W Ta 104W Tc | N-Channel | 4365pF @ 30V | 1 V | 2.7m Ω @ 20A, 10V | 2.5V @ 250μA | 60A Tc | 96nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6661JTXL02 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6661jtxl02-datasheets-9341.pdf | TO-205AD, TO-39-3 Metal Can | 3 | 3 | no | EAR99 | LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | 8541.21.00.95 | BOTTOM | WIRE | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Powers | Not Qualified | 860mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 90V | 90V | 725mW Ta 6.25W Tc | 0.86A | 4Ohm | 10 pF | N-Channel | 50pF @ 25V | 4 Ω @ 1A, 10V | 2V @ 1mA | 860mA Tc | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLD024PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-irld024pbf-datasheets-1254.pdf | 60V | 2.5A | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | Lead Free | 8 Weeks | Unknown | 100mOhm | 4 | No | Single | 1.3W | 1 | 4-DIP, Hexdip, HVMDIP | 870pF | 11 ns | 110ns | 110 ns | 23 ns | 2.5A | 10V | 60V | 2V | 1.3W Ta | 260 ns | 100mOhm | 60V | N-Channel | 870pF @ 25V | 100mOhm @ 1.5A, 5V | 2V @ 250μA | 2.5A Ta | 18nC @ 5V | 100 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 3N164 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-3n1632-datasheets-9363.pdf | TO-206AF, TO-72-4 Metal Can | 4 | no | Lead, Tin | unknown | e0 | Tin/Lead (Sn/Pb) | 8 | Single | 375mW | 1 | Other Transistors | 5 ns | 13ns | 25 ns | -50mA | 30V | 375mW Ta | 0.05A | -30V | P-Channel | 3.5pF @ 15V | 300 Ω @ 100μA, 20V | 5V @ 10μA | 50mA Ta | 20V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ469EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqj469ept1ge3-datasheets-2127.pdf | PowerPAK® SO-8 | 1.267mm | 12 Weeks | 506.605978mg | Unknown | 8 | No | 1 | Single | 100W | 1 | 175°C | PowerPAK® SO-8 | 5.1nF | 16 ns | 16ns | 40 ns | 150 ns | -32A | 20V | 80V | -2V | 100W Tc | 45mOhm | -80V | P-Channel | 5100pF @ 40V | -2 V | 25mOhm @ 10.2A, 10V | 2.5V @ 250μA | 32A Tc | 155nC @ 10V | 25 mΩ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VP0808B | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-vp1008b-datasheets-9502.pdf | -280mA | TO-205AD, TO-39-3 Metal Can | 9 Weeks | 3 | No | e0 | Tin/Lead (Sn/Pb) | 2 | 1 | Single | 800mW | Other Transistors | 11 ns | 30ns | 20 ns | 20 ns | 880mA | 30V | 80V | 6.25W Ta | -80V | P-Channel | 150pF @ 25V | 5 Ω @ 1A, 10V | 4.5V @ 1mA | 880mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7460DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7460dpt1ge3-datasheets-4772.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 9.6MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | FET General Purpose Power | R-XDSO-C5 | 20 ns | 16ns | 16 ns | 75 ns | 11A | 20V | 60V | SILICON | DRAIN | SWITCHING | 1V | 1.9W Ta | 40A | 60V | N-Channel | 1 V | 9.6m Ω @ 18A, 10V | 3V @ 250μA | 11A Ta | 100nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6661JTVP02 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6661jtxl02-datasheets-9341.pdf | TO-205AD, TO-39-3 Metal Can | 3 | 3 | no | EAR99 | LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | unknown | 8541.21.00.95 | BOTTOM | WIRE | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Powers | Not Qualified | 860mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 90V | 90V | 725mW Ta 6.25W Tc | 0.86A | 4Ohm | 10 pF | N-Channel | 50pF @ 25V | 4 Ω @ 1A, 10V | 2V @ 1mA | 860mA Tc | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7465DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7465dpt1e3-datasheets-7224.pdf | PowerPAK® SO-8 | 4.9mm | 1.12mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 64mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | Other Transistors | 150°C | R-XDSO-C5 | 8 ns | 9ns | 9 ns | 65 ns | -5A | 20V | SILICON | DRAIN | 60V | -3V | 1.5W Ta | 3.2A | 25A | 24.2 mJ | -60V | P-Channel | 64m Ω @ 5A, 10V | 3V @ 250μA | 3.2A Ta | 40nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIB408DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sib408dkt1ge3-datasheets-9779.pdf | PowerPAK® SC-75-6L | 1.6mm | 750μm | 1.6mm | Lead Free | 3 | 15 Weeks | 95.991485mg | 6 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | 260 | 6 | 1 | 40 | 2.4W | 1 | FET General Purpose Power | R-PDSO-N3 | 13 ns | 11ns | 9 ns | 13 ns | 7A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.4W Ta 13W Tc | 6A | 20A | 0.04Ohm | 5 mJ | 30V | N-Channel | 350pF @ 15V | 40m Ω @ 6A, 10V | 2.5V @ 250μA | 7A Tc | 9.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS443DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sis443dnt1ge3-datasheets-8385.pdf | PowerPAK® 1212-8 | 1.1684mm | 5 | 14 Weeks | Unknown | 8 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | DUAL | C BEND | 1 | 3.7W | 1 | 150°C | S-PDSO-C5 | 12 ns | 10ns | 10 ns | 48 ns | -13.3A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | -1V | 3.7W Ta 52W Tc | 0.035A | -40V | P-Channel | 4370pF @ 20V | 11.7m Ω @ 15A, 10V | 2.3V @ 250μA | 35A Tc | 135nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM120N04-1M7L-GE3 | Vishay Siliconix | $1.51 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum120n041m7lge3-datasheets-2065.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 13 Weeks | EAR99 | unknown | SINGLE | GULL WING | 1 | R-PSSO-G2 | 120A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 40V | 40V | 375W Tc | 480A | 0.0017Ohm | 423 mJ | N-Channel | 11685pF @ 20V | 17m Ω @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 285nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7852ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si7852adpt1ge3-datasheets-9431.pdf | PowerPAK® SO-8 | 4.9mm | 1.12mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 17MOhm | 8 | yes | EAR99 | No | S17-0173_SINGLE | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5W | 1 | FET General Purpose Power | 150°C | R-XDSO-C5 | 16 ns | 9ns | 9 ns | 26 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 4.5V | 5W Ta 62.5W Tc | 60A | 45 mJ | 80V | N-Channel | 1825pF @ 40V | 17m Ω @ 10A, 10V | 4.5V @ 250μA | 30A Tc | 45nC @ 10V | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4010DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4010dyt1ge3-datasheets-3123.pdf | 8-SOIC (0.154, 3.90mm Width) | 27 Weeks | 3.4mOhm | 8-SO | 30V | 6W Tc | N-Channel | 3595pF @ 15V | 3.4mOhm @ 15A, 10V | 2.3V @ 250μA | 31.3A Tc | 77nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFRC20TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irfrc20trpbf-datasheets-2433.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 4.4Ohm | 3 | No | 18A | 650V | 1 | Single | 2.5W | 1 | D-Pak | 350pF | 10 ns | 23ns | 25 ns | 30 ns | 2A | 20V | 600V | 2V | 2.5W Ta 42W Tc | 4.4Ohm | 600V | N-Channel | 350pF @ 25V | 2 V | 4.4Ohm @ 1.2A, 10V | 4V @ 250μA | 2A Tc | 18nC @ 10V | 4.4 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7792DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | SkyFET®, TrenchFET® Gen III | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7792dpt1ge3-datasheets-5025.pdf | PowerPAK® SO-8 | 5 | 22 Weeks | EAR99 | Tin | DUAL | C BEND | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-C5 | 15 ns | 13ns | 12 ns | 40 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 6.25W Ta 104W Tc | 100A | 0.0021Ohm | 125 mJ | N-Channel | 4.735nF @ 15V | 2.1m Ω @ 20A, 10V | 2.5V @ 250μA | 40.6A Ta 60A Tc | 135nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2304BDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si2304bdst1ge3-datasheets-5031.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 70mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | FET General Purpose Power | 150°C | 7.5 ns | 12.5ns | 12.5 ns | 19 ns | 3.2A | 20V | SILICON | SWITCHING | 2.25V | 750mW Ta | 2.6A | 30V | N-Channel | 225pF @ 15V | 70m Ω @ 2.5A, 10V | 3V @ 250μA | 2.6A Ta | 4nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32429DN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | Non-Inverting | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sip32419dnt1ge4-datasheets-4738.pdf | 10-VFDFN Exposed Pad | 3mm | 3mm | 10 | 15 Weeks | 50.008559mg | Unknown | 56mOhm | 10 | On/Off | No | 28V | 1 | Slew Rate Controlled, Status Flag | 1.42W | DUAL | 12V | 0.5mm | 6V | 1 | SPST | 3.5A | P-Channel | 6V~28V | 550 μs | 1 μs | 1 | General Purpose | High Side | Current Limiting (Fixed), Over Temperature, UVLO | Not Required | 56m Ω | 1:1 |
