Products
Manufacturer
RFQ
NEWS
ContactVishay Siliconix(12746)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Supply Current-Max (Isup) | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SIHP21N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihp21n60efge3-datasheets-1837.pdf | TO-220-3 | Lead Free | 3 | 14 Weeks | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 21A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 227W Tc | TO-220AB | 53A | 0.176Ohm | 367 mJ | N-Channel | 2030pF @ 100V | 176m Ω @ 11A, 10V | 4V @ 250μA | 21A Tc | 84nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM188BCA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB21N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihb21n60efge3-datasheets-2058.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 21A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 227W Tc | 53A | 0.176Ohm | 367 mJ | N-Channel | 2030pF @ 100V | 176m Ω @ 11A, 10V | 4V @ 250μA | 21A Tc | 84nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM188BIC | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP85N10-10-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/vishaysiliconix-sup85n1010ge3-datasheets-2385.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 14 Weeks | 6.000006g | 3 | 1 | Single | 6.55nF | 12 ns | 55 ns | 85A | 20V | 100V | 3.75W Ta 250W Tc | 10.5mOhm | 100V | N-Channel | 6550pF @ 25V | 10.5mOhm @ 30A, 10V | 3V @ 250μA | 85A Tc | 160nC @ 10V | 10.5 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG4599DL-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 10nA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg4599dlt1e3-datasheets-3973.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | Lead Free | 1μA | 6 | 28.009329mg | 5.5V | 2.25V | 60Ohm | 6 | yes | No | 1 | 1μA | e3 | MATTE TIN | 250mW | DUAL | GULL WING | 260 | 2.5V | DG4599 | 6 | 1 | 40 | 250mW | Multiplexer or Switches | 30 ns | 25 ns | Single | 2 | 1 | 60Ohm | BREAK-BEFORE-MAKE | 35ns | 50ns | 2:1 | 2.25V~5.5V | SPDT | 1nA | 7pF 20pF | 30ns, 25ns | 5pC | -70dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP12N60E-GE3 | Vishay Siliconix | $1.10 |
Min: 1 Mult: 1 |
download | E | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp12n60ege3-datasheets-3444.pdf | TO-220-3 | Lead Free | 14 Weeks | 6.000006g | Unknown | 380mOhm | 3 | No | 1 | Single | 147W | 1 | TO-220AB | 937pF | 14 ns | 19ns | 19 ns | 35 ns | 12A | 20V | 600V | 2V | 147W Tc | 320mOhm | 600V | N-Channel | 937pF @ 100V | 380mOhm @ 6A, 10V | 4V @ 250μA | 12A Tc | 58nC @ 10V | 380 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG418LDQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BICMOS | 1μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg419ldqt1e3-datasheets-6551.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad | 3mm | 850μm | 3mm | 1μA | 8 | 12 Weeks | 139.989945mg | 12V | 2.7V | 20Ohm | 8 | yes | VIDEO APPLICATION | 1 | e3 | Matte Tin (Sn) | 320mW | GULL WING | 260 | 5V | 0.65mm | DG418 | 8 | 1 | 40 | 320mW | Multiplexer or Switches | Not Qualified | SPST | 41 ns | 32 ns | 6V | Dual, Single | 3V | -5V | 1 | 20Ohm | 71 dB | BREAK-BEFORE-MAKE | 33ns | 44ns | NO | 2.7V~12V ±3V~6V | 1:1 | SPST - NO | 1nA | 5pF | 43ns, 31ns | 1pC | -71dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP90140E-GE3 | Vishay Siliconix | $2.08 |
Min: 1 Mult: 1 |
download | ThunderFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup90140ege3-datasheets-3917.pdf | TO-220-3 | 3 | 14 Weeks | Unknown | 3 | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 90A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 200V | 200V | 4V | 375W Tc | TO-220AB | 240A | 0.018Ohm | 180 mJ | N-Channel | 4132pF @ 100V | 17m Ω @ 30A, 10V | 4V @ 250μA | 90A Tc | 96nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG411LDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | 85°C | -40°C | 1μA | ROHS3 Compliant | 2015 | /files/vishaysiliconix-dg411ldqt1-datasheets-8917.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 1μA | 10 Weeks | 1.627801g | Unknown | 12V | 2.7V | 50Ohm | 16 | 1μA | 900mW | DG411 | 4 | 900mW | 4 | 16-PDIP | 280MHz | SPST | 85 ns | 60 ns | 6V | 5V | Dual, Single | 3V | 4 | 4 | 17Ohm | 2.7V~12V ±3V~6V | 1:1 | SPST - NC | 250pA | 5pF 6pF | 19ns, 12ns | 5pC | -95dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHH28N60E-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sihh28n60et1ge3-datasheets-4602.pdf | 8-PowerTDFN | 1.05mm | 18 Weeks | 1 | 202W | 150°C | 29 ns | 84 ns | 29A | 30V | 202W Tc | 600V | N-Channel | 2614pF @ 100V | 98m Ω @ 14A, 10V | 5V @ 250μA | 29A Tc | 129nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG611DJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | NMOS | -1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg612dyt1-datasheets-2726.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 500MHz | 1μA | 16 | 1.627801g | 18V | 10V | 45Ohm | 16 | yes | VIDEO APPLICATION | No | 4 | e3 | Matte Tin (Sn) | 470mW | 15V | DG611 | 16 | 1 | 470mW | Multiplexer or Switches | 515-3V | SPST | 35 ns | 25 ns | 15V | Dual, Single | 10V | -3V | 4 | SEPARATE OUTPUT | 45Ohm | 74 dB | 2Ohm | BREAK-BEFORE-MAKE | 50ns | NC | 10V~18V ±10V~15V | 1:1 | SPST - NC | 250pA | 3pF 2pF | 35ns, 25ns | 4pC | 2 Ω | -87dB @ 5MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD2N80E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sihd2n80ege3-datasheets-7474.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.507mm | 14 Weeks | 1 | 62.5W | 150°C | 11 ns | 19 ns | 2.8A | 30V | 62.5W Tc | 800V | N-Channel | 315pF @ 100V | 2.75 Ω @ 1A, 10V | 4V @ 250μA | 2.8A Tc | 19.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2003DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 20nA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2005dqt1e3-datasheets-5288.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad | 3mm | 850μm | 3mm | Lead Free | 1μA | 139.989945mg | 5.5V | 1.8V | 2.5Ohm | 8 | No | 20nA | 320mW | DG2003 | 320mW | SPST | 28 ns | 22 ns | Single | 2 | 2.5Ohm | 1:1 | 1.8V~5.5V | SPST - NO | 1nA | 51pF | 28ns, 22ns | 1pC | -67dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBE30LPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfbe30lpbf-datasheets-7866.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 9.65mm | 4.83mm | Lead Free | 8 Weeks | 2.387001g | 3Ohm | 3 | No | 1 | Single | I2PAK | 1.3nF | 12 ns | 33ns | 30 ns | 82 ns | 4.1A | 20V | 800V | 125W Tc | 3Ohm | N-Channel | 1300pF @ 25V | 3Ohm @ 2.5A, 10V | 4V @ 250μA | 4.1A Tc | 78nC @ 10V | 3 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG213DQ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg213dy-datasheets-7631.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | 1μA | 16 | 172.98879mg | 40V | 3V | 110Ohm | 16 | yes | 4 | e3 | Matte Tin (Sn) | 500mW | GULL WING | 260 | 15V | 0.65mm | DG213 | 16 | 1 | 40 | 500mW | Multiplexer or Switches | 512/+-15V | Not Qualified | SPST | 130 ns | 100 ns | 22V | Dual, Single | 3V | -15V | 4 | SEPARATE OUTPUT | 60Ohm | 90 dB | 1Ohm | BREAK-BEFORE-MAKE | 3V~40V ±3V~22V | 1:1 | SPST - NO/NC | 500pA | 5pF 5pF | 130ns, 100ns | 1pC | 1 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA429DJT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sia429djtt1ge3-datasheets-8609.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | Lead Free | 3 | 14 Weeks | Unknown | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | 6 | 1 | Single | 40 | 3.5W | 1 | Other Transistors | S-PDSO-N3 | 22 ns | 25ns | 25 ns | 70 ns | 10.6A | 8V | SILICON | DRAIN | SWITCHING | 20V | 3.5W Ta 19W Tc | 30A | 0.0205Ohm | -20V | P-Channel | 1750pF @ 10V | -400 mV | 20.5m Ω @ 6A, 4.5V | 1V @ 250μA | 12A Tc | 62nC @ 8V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG211BDQ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 10μA | 1.2mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg212bdyt1-datasheets-7664.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5mm | 22V | Lead Free | 16 | 25V | 4.5V | 160Ohm | 16 | yes | No | 4 | 50μA | e3 | Matte Tin (Sn) | GULL WING | 260 | 15V | 0.65mm | DG211 | 16 | 1 | 40 | 640mW | Multiplexer or Switches | 512/+-15V | SPST | 22V | Dual, Single | 4.5V | -15V | 4 | SEPARATE OUTPUT | 85Ohm | 90 dB | 2Ohm | BREAK-BEFORE-MAKE | 200ns | 300ns | NC | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ860EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqj860ept1ge3-datasheets-0911.pdf | PowerPAK® SO-8 | 1.267mm | 4 | 12 Weeks | unknown | YES | SINGLE | GULL WING | 1 | 48W | 1 | 175°C | R-PSSO-G4 | 10 ns | 30 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 48W Tc | 36A | 0.006Ohm | 40V | N-Channel | 2700pF @ 25V | 6m Ω @ 10A, 10V | 2.5V @ 250μA | 60A Tc | 55nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2747DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2015 | /files/vishaysiliconix-dg2747dnt1e4-datasheets-5407.pdf | 8-UFQFN | 1.4mm | 550μm | 1.4mm | 1μA | 8 | No SVHC | 4.3V | 1.6V | 600mOhm | 8 | yes | unknown | 2 | 1μA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 190mW | QUAD | NO LEAD | 260 | 3V | 0.4mm | DG2747 | 8 | 1 | 40 | 190mW | Multiplexer or Switches | 3V | Not Qualified | 93MHz | SPST | 25 ns | 25 ns | Single | 2 | SEPARATE OUTPUT | 600mOhm | 52 dB | 0.03Ohm | BREAK-BEFORE-MAKE | NO | 1:1 | 1.6V~4.3V | SPST - NO | 2nA | 75pF 55pF | 25ns, 25ns | 10pC | 30m Ω (Max) | -90dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8808DB-T2-E1 | Vishay Siliconix | $0.38 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8808dbt2e1-datasheets-1898.pdf | 4-UFBGA | 4 | 30 Weeks | 4 | EAR99 | unknown | e3 | Matte Tin (Sn) | BOTTOM | BALL | 1 | Single | 900mW | 1 | 2.5A | 8V | SILICON | SWITCHING | 500mW Ta | 30V | N-Channel | 330pF @ 15V | 95m Ω @ 1A, 4.5V | 900mV @ 250μA | 10nC @ 8V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG3002DB-T1-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 100nA | 0.753mm | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg3001dbt1e1-datasheets-4946.pdf | 6-WFBGA | 1μA | 6 | 5.5V | 1.8V | 700mOhm | 6 | yes | No | 1 | 100nA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 250mW | BOTTOM | BALL | 260 | 3V | 0.5mm | DG3002 | 6 | 1 | 40 | Multiplexer or Switches | 3V | 1 | SPST | 71 ns | 59 ns | Single | 700mOhm | 70 dB | 0.01Ohm | BREAK-BEFORE-MAKE | NC | 1:1 | 1.8V~5.5V | SPST - NC | 1nA | 100pF | 71ns, 59ns | 64pC | 10m Ω | -70dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3421DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si3421dvt1ge3-datasheets-3123.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 14 Weeks | 19.986414mg | Unknown | 6 | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | SI3421 | NOT SPECIFIED | 1 | 7 ns | 9ns | 13 ns | 55 ns | -8A | -20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | -3V | 2W Ta 4.2W Tc | MO-193AA | 8A | 0.0192Ohm | P-Channel | 2580pF @ 15V | 19.2m Ω @ 7A, 10V | 3V @ 250μA | 8A Tc | 69nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG418LDY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | BICMOS | 1μA | ROHS3 Compliant | /files/vishaysiliconix-dg419ldqt1e3-datasheets-6551.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 1μA | 8 | 540.001716mg | No SVHC | 12V | 2.7V | 20Ohm | 8 | yes | VIDEO APPLICATION | No | 1 | 20nA | e3 | MATTE TIN | 400mW | GULL WING | 260 | 5V | DG418 | 8 | 1 | 40 | 400mW | Multiplexer or Switches | SPST | 41 ns | 32 ns | 6V | 5V | Dual, Single | 3V | -5V | 1 | 20Ohm | 20Ohm | 71 dB | BREAK-BEFORE-MAKE | 33ns | 44ns | NO | 2.7V~12V ±3V~6V | 1:1 | SPST - NO | 1nA | 5pF | 43ns, 31ns | 1pC | -71dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ3456BEV-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Digi-Reel® | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sq3456bevt1ge3-datasheets-5292.pdf | SOT-23-6 Thin, TSOT-23-6 | 12 Weeks | 19.986414mg | 6 | No | 1 | Single | 4W | 1 | 6-TSOP | 370pF | 6 ns | 12ns | 8 ns | 13 ns | 7.8A | 20V | 30V | 4W Tc | 35mOhm | 30V | N-Channel | 370pF @ 15V | 35mOhm @ 6A, 10V | 2.5V @ 250μA | 7.8A Tc | 10nC @ 10V | 35 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG408LDQ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | BICMOS | 700μA | ROHS3 Compliant | 2012 | /files/vishaysiliconix-dg409ldqt1e3-datasheets-6643.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5mm | 4.4mm | Lead Free | 16 | 12V | 2.7V | 17Ohm | 16 | yes | VIDEO APPLICATION | unknown | 1 | e3 | Matte Tin (Sn) | GULL WING | 260 | 5V | 0.65mm | DG408 | 16 | 8 | 40 | 650mW | 0.7mA | 1 | Not Qualified | 6V | 5V | Multiplexer | Dual, Single | 3V | -5V | 8 | 29Ohm | 70 dB | BREAK-BEFORE-MAKE | 45ns | 60ns | 2.7V~12V ±3V~6V | 0.03A | 8:1 | 1nA | 7pF 20pF | 55ns, 25ns | 1pC | 1 Ω | -82dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ868EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sqj868ept1ge3-datasheets-6727.pdf | PowerPAK® SO-8 | 12 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 40V | 48W Tc | N-Channel | 2450pF @ 20V | 7.35m Ω @ 14A, 10V | 3.5V @ 250μA | 58A Tc | 55nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG787DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 1μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg787dqt1e3-datasheets-5530.pdf | 10-TFSOP, 10-MSOP (0.118, 3.00mm Width) | 1μA | 10 | 143.193441mg | 5.5V | 1.8V | 2.9Ohm | 10 | 2 | e3 | 320mW | DUAL | GULL WING | NOT SPECIFIED | 0.5mm | DG787 | 10 | SPST | NOT SPECIFIED | Multiplexer or Switches | 3/5V | 2 | Not Qualified | 300MHz | 45 ns | 42 ns | Single | 2.9Ohm | BREAK-BEFORE-MAKE | 51ns | 2:1 | 1.8V~5.5V | SPDT | 1nA | 12pF | 45ns, 42ns | 1pC | 250m Ω (Max) | -56dB @ 10MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQS420EN-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqs420ent1ge3-datasheets-7409.pdf | PowerPAK® 1212-8 | 12 Weeks | PowerPAK® 1212-8 | 20V | 18W Tc | N-Channel | 490pF @ 10V | 28mOhm @ 5A, 4.5V | 1.5V @ 250μA | 8A Tc | 14nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9232DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg9233dyt1-datasheets-2750.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad | 3mm | 850μm | 3mm | 1μA | 8 | 14 Weeks | 139.989945mg | 12V | 2.7V | 30Ohm | 8 | yes | unknown | 2 | e3 | Matte Tin (Sn) | 400mW | DUAL | GULL WING | 260 | 3V | 0.65mm | DG9232 | 8 | 1 | 40 | Multiplexer or Switches | 3/5V | Not Qualified | SPST | 75 ns | 50 ns | Single | 2 | SEPARATE OUTPUT | 30Ohm | 30Ohm | 74 dB | 0.4Ohm | BREAK-BEFORE-MAKE | NO | 1:1 | 2.7V~12V | SPST - NC | 100pA | 7pF 13pF | 75ns, 50ns | 2pC | 400m Ω | -90dB @ 1MHz |
