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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Polarity | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Supply Current-Max (Isup) | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | FET Technology | High Level Output Current | Threshold Voltage | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| SI4330DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4330dyt1e3-datasheets-4441.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | EAR99 | No | e3 | MATTE TIN | 1.1W | GULL WING | 260 | SI4330 | 8 | Dual | 40 | 1.1W | 2 | R-PDSO-G8 | 10 ns | 10ns | 10 ns | 40 ns | 6.6A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 0.0165Ohm | 30V | 2 N-Channel (Dual) | 16.5m Ω @ 8.7A, 10V | 3V @ 250μA | 20nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG412LEDQ-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | 1.2mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg412ledyt1ge3-datasheets-1089.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5mm | 16 | 20 Weeks | No SVHC | 26Ohm | 16 | 4 | Pure Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 5V | 0.65mm | 1 | NOT SPECIFIED | 4 | -5V | 26Ohm | 68 dB | 60ns | 3V~16V ±3V~8V | 1:1 | SPST - NO | 1nA | 5pF 6pF | 50ns, 30ns | 6.6pC | -114dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4834BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si4834bdyt1e3-datasheets-4489.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 186.993455mg | 8 | 1.1W | SI4834 | 2 | Dual | 8-SO | 9 ns | 10ns | 9 ns | 19 ns | 5.7A | 20V | 30V | 1.1W | 22mOhm | 30V | 2 N-Channel (Dual) | 22mOhm @ 7.5A, 10V | 3V @ 250μA | 5.7A | 11nC @ 4.5V | Logic Level Gate | 22 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG413LEDY-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | 1.75mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg412ledyt1ge3-datasheets-1089.pdf | 16-SOIC (0.154, 3.90mm Width) | 9.9mm | 3.9mm | 16 | 18 Weeks | 26Ohm | 4 | Pure Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 5V | 1.27mm | 1 | NOT SPECIFIED | 4 | R-PDSO-G16 | -5V | 26Ohm | 68 dB | 60ns | 3V~16V ±3V~8V | 1:1 | SPST - NO/NC | 1nA | 5pF 6pF | 50ns, 30ns | 6.6pC | -114dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3909DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si3909dvt1ge3-datasheets-2192.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | EAR99 | e3 | MATTE TIN | 1.15W | GULL WING | 260 | 6 | Dual | 40 | 1.15W | 2 | Not Qualified | R-PDSO-G6 | 34ns | 34 ns | 19 ns | 1.8A | 12V | SILICON | METAL-OXIDE SEMICONDUCTOR | 0.2Ohm | 20V | 2 P-Channel (Dual) | 200m Ω @ 1.8A, 4.5V | 500mV @ 250μA (Min) | 4nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG723DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Digi-Reel® | 1 (Unlimited) | CMOS | 2μA | ROHS3 Compliant | 2010 | /files/vishaysiliconix-dg723dqt1ge3-datasheets-5589.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad | 3mm | 950μm | 3.1mm | Lead Free | 2μA | 8 | 139.989945mg | No SVHC | 5.5V | 1.8V | 4.5Ohm | 8 | VIDEO APPLICATION | Tin | No | 2 | 2μA | Non-Inverting | 320mW | DUAL | GULL WING | 3V | 0.65mm | DG723 | 8 | 1 | Multiplexer or Switches | 3/5V | 2 | 366MHz | SPST | 30 ns | 35 ns | Single | 50mA | 4.5Ohm | 47 dB | 0.3Ohm | BREAK-BEFORE-MAKE | 40ns | 55ns | 1:1 | 1.8V~5.5V | SPST - NO/NC | 250pA | 8pF 9pF | 30ns, 35ns | 2.2pC | 200m Ω | -90dB @ 10MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4944DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4944dyt1e3-datasheets-4563.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | Unknown | 9.5mOhm | 8 | yes | EAR99 | No | 75A | e3 | Matte Tin (Sn) | 30V | 1.3W | GULL WING | 260 | SI4944 | 8 | Dual | 40 | 1.3W | 2 | FET General Purpose Power | 10 ns | 10ns | 12 ns | 40 ns | 12.2A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 3V | 30V | 2 N-Channel (Dual) | 9.5m Ω @ 12.2A, 10V | 3V @ 250μA | 9.3A | 21nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG401DJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 5μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg403dje3-datasheets-0863.pdf | 16-DIP (0.300, 7.62mm) | 19.43mm | 4.45mm | 7.87mm | 15V | Lead Free | 1μA | 16 | 12 Weeks | 1.627801g | 36V | 13V | 55Ohm | 16 | yes | No | 2 | e3 | Matte Tin (Sn) | 450mW | 260 | 15V | DG401 | 16 | 1 | 30 | 450mW | Multiplexer or Switches | SPST | 150 ns | 100 ns | 22V | 15V | Dual, Single | 7V | -15V | 2 | SEPARATE OUTPUT | 45Ohm | 72 dB | 3Ohm | BREAK-BEFORE-MAKE | NO | 1:1 | SPST - NO | ±15V | 500pA | 12pF 12pF | 150ns, 100ns | 60pC | -94.8dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6943BDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si6943bdqt1e3-datasheets-4688.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | 8 | yes | EAR99 | No | e3 | MATTE TIN | 800mW | GULL WING | 260 | SI6943 | 8 | Dual | 40 | 800mW | 2 | Other Transistors | 15 ns | 35ns | 30 ns | 35 ns | -2.5A | 8V | SILICON | METAL-OXIDE SEMICONDUCTOR | 12V | 2 P-Channel (Dual) | 80m Ω @ 2.5A, 4.5V | 800mV @ 250μA | 2.3A | 10nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG401DY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 5μA | 1.75mm | ROHS3 Compliant | 2012 | /files/vishaysiliconix-dg403dje3-datasheets-0863.pdf | 16-SOIC (0.154, 3.90mm Width) | 9.9mm | 3.9mm | 16 | 13 Weeks | 36V | 13V | 55Ohm | yes | unknown | 2 | e3 | Matte Tin (Sn) | GULL WING | 260 | 15V | DG401 | 16 | 1 | 30 | Multiplexer or Switches | 5+-15V | 2 | Not Qualified | R-PDSO-G16 | SPST | 22V | Dual | 7V | -15V | SEPARATE OUTPUT | 45Ohm | 72 dB | 3Ohm | BREAK-BEFORE-MAKE | 100ns | 150ns | NO | 1:1 | SPST - NO | ±15V | 500pA | 12pF 12pF | 150ns, 100ns | 60pC | -94.8dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6967DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6967dqt1e3-datasheets-2348.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | 8 | 157.991892mg | 8 | EAR99 | e3 | MATTE TIN | 1.1W | GULL WING | 260 | 8 | 2 | Dual | 40 | 1.1W | 2 | Not Qualified | 20 ns | 30ns | 30 ns | 85 ns | 5A | 8V | SILICON | 8V | METAL-OXIDE SEMICONDUCTOR | 5A | 30A | 0.03Ohm | 2 P-Channel (Dual) | 30m Ω @ 5A, 4.5V | 450mV @ 250μA (Min) | 40nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG445BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 5μA | 1.75mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg444bdnt1e4-datasheets-2687.pdf | 16-SOIC (0.154, 3.90mm Width) | 9.9mm | 3.9mm | 1μA | 16 | 13 Weeks | 36V | 13V | 160Ohm | 16 | yes | unknown | 4 | e3 | Matte Tin (Sn) | 640mW | GULL WING | 260 | 15V | 1.27mm | DG445 | 16 | 1 | 30 | 640mW | Multiplexer or Switches | Not Qualified | SPST | 300 ns | 200 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 80Ohm | 90 dB | BREAK-BEFORE-MAKE | NO | 12V ±15V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7904DN-T1-E3 | Vishay Siliconix | $0.23 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2006 | /files/vishaysiliconix-si7904dnt1e3-datasheets-2389.pdf | PowerPAK® 1212-8 Dual | Unknown | 8 | No | 1.3W | SI7904 | Dual | 2.8W | 2 | PowerPAK® 1212-8 Dual | 15 ns | 50ns | 50 ns | 60 ns | 7.7A | 8V | 20V | 1.3W | 30mOhm | 20V | 2 N-Channel (Dual) | 1 V | 30mOhm @ 7.7A, 4.5V | 1V @ 935μA | 5.3A | 15nC @ 4.5V | Logic Level Gate | 30 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG308BDQ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1μA | 1.2mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg308bdye3-datasheets-1370.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5mm | 16 | 15 Weeks | 44V | 4V | 160Ohm | 16 | yes | unknown | 4 | e3 | Matte Tin (Sn) | GULL WING | 260 | 15V | 0.65mm | DG308 | 16 | 1 | 40 | Multiplexer or Switches | +-15V | 4 | Not Qualified | SPST | 22V | Dual, Single | 4V | -15V | SEPARATE OUTPUT | 85Ohm | 90 dB | 1.7Ohm | BREAK-BEFORE-MAKE | 150ns | 200ns | NO | 4V~44V ±4V~22V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 200ns, 150ns | 1pC | 1.7 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4967DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4967dyt1e3-datasheets-2305.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | No | e3 | PURE MATTE TIN | 2W | GULL WING | 260 | Dual | 30 | 2 | Other Transistors | R-PDSO-G8 | 25 ns | 95 ns | 210 ns | 7.5A | 8V | SILICON | 12V | METAL-OXIDE SEMICONDUCTOR | MS-012AA | 30A | 0.023Ohm | -12V | 2 P-Channel (Dual) | 23m Ω @ 7.5A, 4.5V | 450mV @ 250μA (Min) | 55nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG509BEY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 500μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg508bent1ge4-datasheets-3833.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | 250MHz | Lead Free | -200μA | 16 | 13 Weeks | 665.986997mg | Unknown | 44V | 12V | 500Ohm | 16 | yes | No | 2 | 600μA | e3 | MATTE TIN | 640mW | GULL WING | 260 | 15V | DG509 | 16 | 4 | 40 | 640mW | 2 | 300 ns | 250 ns | 20V | Multiplexer | 300 ns | Dual, Single | 5V | -15V | 8 | 380Ohm | 81 dB | 10Ohm | BREAK-BEFORE-MAKE | 340ns | 0.03A | 4:1 | SP4T | ±5V~20V | 1nA | 3pF 8pF | 250ns, 240ns | 2pC | 10 Ω | -88dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2343CDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si2343cdst1ge3-datasheets-3500.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 45MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.25W | 1 | Other Transistors | 30 ns | 8 ns | 18 ns | 5.9A | 20V | SILICON | SWITCHING | 30V | -1.2V | 1.25W Ta 2.5W Tc | -30V | P-Channel | 590pF @ 15V | -1.2 V | 45m Ω @ 4.2A, 10V | 2.5V @ 250μA | 5.9A Tc | 21nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG406DN-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 30μA | ROHS3 Compliant | 2014 | /files/vishaysiliconix-dg406dnt1e3-datasheets-9986.pdf | 28-LCC (J-Lead) | 12.57mm | 3.69mm | 12.57mm | 15V | Lead Free | 500μA | 28 | 12 Weeks | 1.182714g | No SVHC | 44V | 7.5V | 50Ohm | 28 | yes | No | 1 | 50μA | e3 | Matte Tin (Sn) | 450mW | QUAD | J BEND | 260 | 15V | DG406 | 28 | 16 | 40 | 450mW | 1 | 600 ns | 300 ns | 20V | Multiplexer | 350 ns | Dual, Single | 5V | -15V | 16 | 100Ohm | 100Ohm | 69 dB | 5Ohm | BREAK-BEFORE-MAKE | 400ns | 12V ±5V~20V | 0.02A | 16:1 | 500pA | 8pF 130pF | 200ns, 150ns | 15pC | 5 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA445EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia445edjt1ge3-datasheets-4626.pdf | PowerPAK® SC-70-6 | 2.05mm | 800μm | 2.05mm | Lead Free | 3 | 14 Weeks | Unknown | 16.5mOhm | 6 | EAR99 | No | DUAL | 1 | Single | 3.5W | 1 | 150°C | S-PDSO-N3 | 25 ns | 55 ns | -11.8A | 12V | SILICON | DRAIN | SWITCHING | 20V | -500mV | 3.5W Ta 19W Tc | 50A | -20V | P-Channel | 2130pF @ 10V | 16.5m Ω @ 7A, 4.5V | 1.2V @ 250μA | 12A Tc | 72nC @ 10V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG506BEQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 100μA | ROHS3 Compliant | 2011 | /files/vishaysiliconix-dg507bewt1ge3-datasheets-3635.pdf | 28-TSSOP (0.173, 4.40mm Width) | 9.7mm | 28 | 15 Weeks | Unknown | 44V | 12V | 450Ohm | 28 | yes | No | 1 | 5μA | GULL WING | 260 | 15V | 0.65mm | DG506 | 28 | 16 | 40 | 817mW | 1 | 114MHz | 20V | Multiplexer | Dual, Single | 5V | -15V | 16 | 300Ohm | 85 dB | 10Ohm | BREAK-BEFORE-MAKE | 220ns | 0.03A | 16:1 | ±5V~20V | 1nA | 3pF 13pF | 250ns, 200ns | 1pC | 10 Ω | -85dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4532ADY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/vishaysiliconix-si4532adyt1ge3-datasheets-1111.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 15 Weeks | 186.993455mg | Unknown | 80mOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | 1.2W | DUAL | GULL WING | 260 | SI4532 | 8 | 2 | 40 | 2W | 2 | 8 ns | 9ns | 10 ns | 21 ns | 4.9A | 20V | SILICON | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1V | 1.13W 1.2W | 3.7A | 30V | N and P-Channel | 1 V | 53m Ω @ 4.9A, 10V | 1V @ 250μA (Min) | 3.7A 3A | 16nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9253EN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Digi-Reel® | 1 (Unlimited) | CMOS | 1μA | 0.8mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg9253ent1e4-datasheets-6421.pdf | 16-WFQFN | 480MHz | Lead Free | 16 | 16V | 2.7V | 182Ohm | 16 | yes | No | 3 | 525mW | QUAD | 260 | 5V | 0.4mm | DG9253 | 16 | 2 | SINGLE-ENDED MULTIPLEXER | 40 | 525mW | Multiplexer or Switches | 0.01mA | 3 | 455 ns | 136 ns | 5V | 3V | Dual, Single | 2.7V | -5V | 6 | 182Ohm | 45 dB | 3.1Ohm | BREAK-BEFORE-MAKE | 2.7V~16V ±2.7V~5V | 2:1 | SPDT | 1nA | 2pF 4.6pF | 250ns, 125ns | 4.1pC | 3.1 Ω | -67dB @ 10MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7270DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7270dpt1ge3-datasheets-6137.pdf | PowerPAK® SO-8 Dual | 6 | 13 Weeks | No SVHC | 8 | EAR99 | No | e3 | Matte Tin (Sn) | 17.8W | C BEND | 260 | 8 | Dual | 30 | 3.6W | 2 | FET General Purpose Power | R-PDSO-C6 | 10 ns | 8ns | 8 ns | 18 ns | 8A | 20V | SILICON | DRAIN | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 1.2V | 8A | 35A | 30V | 2 N-Channel (Dual) | 900pF @ 15V | 21m Ω @ 8A, 10V | 2.8V @ 250μA | 21nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG409LDQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BICMOS | 700μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg409ldqt1e3-datasheets-6643.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.07mm | 920μm | 4.4mm | Lead Free | 500μA | 16 | 172.98879mg | Unknown | 12V | 2.7V | 17Ohm | 16 | yes | VIDEO APPLICATION | No | 2 | 10μA | e3 | Matte Tin (Sn) | 650mW | GULL WING | 260 | 5V | 0.65mm | DG409 | 16 | 4 | 40 | 650mW | 2 | SPST | 150 ns | 150 ns | 6V | Multiplexer | Dual, Single | 3V | -5V | 8 | 29Ohm | 30Ohm | 70 dB | BREAK-BEFORE-MAKE | 45ns | 60ns | 2V~12V ±3V~6V | 0.03A | 4:1 | SP4T | 1nA | 7pF 20pF | 55ns, 25ns | 1pC | 1 Ω | -82dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA471DJ-T1-GE3 | Vishay Siliconix | $0.56 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia471djt1ge3-datasheets-7162.pdf | PowerPAK® SC-70-6 | 14 Weeks | PowerPAK® SC-70-6 Single | 30V | 3.5W Ta 19.2W Tc | P-Channel | 1170pF @ 15V | 14mOhm @ 10A, 10V | 2.5V @ 250μA | 12.9A Ta 30.3A Tc | 27.8nC @ 10V | 4.5V 10V | +16V, -20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG413DJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 100pA | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg413dj-datasheets-7502.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 1μA | 16 | 1.627801g | 36V | 13V | 35Ohm | 16 | no | unknown | 4 | e0 | Tin/Lead (Sn/Pb) | Non-Inverting | 470mW | 16 | 470mW | Multiplexer or Switches | Not Qualified | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | 30mA | 4 | 35Ohm | 25Ohm | BREAK-BEFORE-MAKE | 250ns | 5V~44V ±5V~20V | 1:1 | SPST - NO/NC | 250pA | 9pF 9pF | 175ns, 145ns | 5pC | -85dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISA40DN-T1-GE3 | Vishay Siliconix | $0.67 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sisa40dnt1ge3-datasheets-7834.pdf | PowerPAK® 1212-8 | 14 Weeks | PowerPAK® 1212-8 | 20V | 3.7W Ta 52W Tc | N-Channel | 3415pF @ 10V | 1.1mOhm @ 10A, 10V | 1.5V @ 250μA | 43.7A Ta 162A Tc | 53nC @ 10V | 2.5V 10V | +12V, -8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG309DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg309dy-datasheets-7535.pdf | 16-SOIC (0.154, 3.90mm Width) | 15V | 10μA | 16 | 36V | 13V | 85Ohm | 16 | no | unknown | 4 | 1nA | e0 | Tin/Lead (Sn/Pb) | 600mW | GULL WING | 15V | 1.27mm | 16 | 600mW | Multiplexer or Switches | Not Qualified | 200 ns | 150 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 85Ohm | BREAK-BEFORE-MAKE | NC | 4V~44V ±4V~22V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 200ns, 150ns | 1pC | 1.7 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA64DP-T1-GE3 | Vishay Siliconix | $2.83 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira64dpt1re3-datasheets-8296.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 27.8W Tc | N-Channel | 3420pF @ 15V | 2.1mOhm @ 10A, 10V | 2.2V @ 250μA | 60A Tc | 65nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG309CJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg309dy-datasheets-7535.pdf | 16-DIP (0.300, 7.62mm) | 16 | no | unknown | 4 | e0 | Tin/Lead (Sn/Pb) | NO | DUAL | 15V | 16 | Multiplexer or Switches | +-15V | 4 | Not Qualified | R-PDIP-T16 | -15V | SEPARATE OUTPUT | 85Ohm | 60Ohm | BREAK-BEFORE-MAKE | 200ns | NC | 4V~44V ±4V~22V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 200ns, 150ns | 1pC | 1.7 Ω | -95dB @ 100kHz |
