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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Voltage - Input | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Recovery Time | Utilized IC / Part | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Voltage - Output | Avalanche Energy Rating (Eas) | Current - Output | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Supplied Contents | Frequency - Switching | Main Purpose | Nominal Vgs | Board Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Outputs and Type | Regulator Topology |
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| SIP12110DB | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | /files/vishaysiliconix-sip12110dmpt1ge4-datasheets-9107.pdf | 8 Weeks | 4.5V~15V | SiP12110 | 0.6V~5.5V | 6A | Board(s) | 1MHz | DC/DC, Step Down | Fully Populated | 1, Non-Isolated | Buck | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR862DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-sir862dpt1ge3-datasheets-6739.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | 506.605978mg | 8 | yes | EAR99 | No | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Power | R-XDSO-C5 | 28 ns | 16ns | 17 ns | 39 ns | 32A | 20V | SILICON | DRAIN | SWITCHING | 25V | 25V | 5.2W Ta 69W Tc | 50A | 70A | N-Channel | 3800pF @ 10V | 2.8m Ω @ 15A, 10V | 2.3V @ 250μA | 50A Tc | 90nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SIC461EVB-A | Vishay Siliconix |
Min: 1 Mult: 1 |
download | /files/vishaysiliconix-sic464edt1ge3-datasheets-4714.pdf | 9 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7892BDP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7892bdpt1ge3-datasheets-7461.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 5 | 14 Weeks | 506.605978mg | 8 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.8W | 1 | FET General Purpose Powers | Not Qualified | R-XDSO-C5 | 20 ns | 13ns | 13 ns | 62 ns | 25A | 20V | SILICON | DRAIN | 1.8W Ta | 60A | 0.0042Ohm | 30V | N-Channel | 3775pF @ 15V | 4.2m Ω @ 25A, 10V | 3V @ 250μA | 15A Ta | 40nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| V30393-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9020TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfu9020pbf-datasheets-5922.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 1.437803g | Unknown | 280MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 40 | 42W | 1 | Other Transistors | R-PSSO-G2 | 8.2 ns | 67ns | 25 ns | 12 ns | 9.9A | 20V | SILICON | DRAIN | SWITCHING | 50V | -4V | 42W Tc | 40A | 250 mJ | -50V | P-Channel | 490pF @ 25V | -2 V | 280m Ω @ 5.7A, 10V | 4V @ 250μA | 9.9A Tc | 14nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFP32N50KPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfp32n50k-datasheets-5497.pdf | 500V | 32A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 11 Weeks | 38.000013g | No SVHC | 135mOhm | 3 | Tin | No | 1 | Single | 460W | 1 | TO-247-3 | 5.28nF | 28 ns | 120ns | 54 ns | 48 ns | 32A | 30V | 500V | 5V | 460W Tc | 160mOhm | 500V | N-Channel | 5280pF @ 25V | 5 V | 160mOhm @ 32A, 10V | 5V @ 250μA | 32A Tc | 190nC @ 10V | 160 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI4630DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si4630dyt1e3-datasheets-7093.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 186.993455mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Power | 17 ns | 93ns | 9 ns | 60 ns | 36A | 16V | SILICON | SWITCHING | 1V | 3.5W Ta 7.8W Tc | 27A | 70A | 0.0027Ohm | 45 mJ | 25V | N-Channel | 6670pF @ 15V | 2.7m Ω @ 20A, 10V | 2.2V @ 250μA | 40A Tc | 161nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
| IRFC430 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7633DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7633dpt1ge3-datasheets-9243.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 5 | 14 Weeks | 506.605978mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 40 | 6.25W | 1 | Other Transistors | R-XDSO-C5 | 100 ns | 90ns | 50 ns | 100 ns | 34A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 6.25W Ta 104W Tc | 60A | 0.0033Ohm | -20V | P-Channel | 9500pF @ 10V | 3.3m Ω @ 20A, 10V | 3V @ 250μA | 60A Tc | 260nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFR320PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | /files/vishaysiliconix-irfu320pbf-datasheets-8190.pdf | 400V | 3.1A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 1.8Ohm | 3 | No | 1 | Single | 42W | 1 | D-Pak | 350pF | 10 ns | 14ns | 13 ns | 30 ns | 3.1A | 20V | 400V | 4V | 2.5W Ta 42W Tc | 600 ns | 1.8Ohm | 400V | N-Channel | 350pF @ 25V | 1.8Ohm @ 1.9A, 10V | 4V @ 250μA | 3.1A Tc | 20nC @ 10V | 1.8 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFRC20TRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfrc20trpbf-datasheets-2433.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | 4.4Ohm | 3 | No | 1 | Single | 2.5W | 1 | D-Pak | 350pF | 10 ns | 23ns | 25 ns | 30 ns | 2A | 20V | 600V | 2.5W Ta 42W Tc | 4.4Ohm | 600V | N-Channel | 350pF @ 25V | 4.4Ohm @ 1.2A, 10V | 4V @ 250μA | 2A Tc | 18nC @ 10V | 4.4 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF830ALPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf830aspbf-datasheets-3844.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.41mm | 9.65mm | 4.7mm | Lead Free | 8 Weeks | 2.387001g | Unknown | 1.4Ohm | 3 | No | 1 | Single | 3.1W | 1 | I2PAK | 620pF | 10 ns | 21ns | 15 ns | 21 ns | 5A | 30V | 500V | 4.5V | 3.1W Ta 74W Tc | 1.4Ohm | N-Channel | 620pF @ 25V | 1.4Ohm @ 3A, 10V | 4.5V @ 250μA | 5A Tc | 24nC @ 10V | 1.4 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB33N60ET1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2017 | /files/vishaysiliconix-sihb33n60ege3-datasheets-1747.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | 1.437803g | YES | GULL WING | 1 | 1 | R-PSSO-G2 | 33A | SILICON | SWITCHING | 600V | 600V | 278W Tc | 88A | 0.099Ohm | 793 mJ | N-Channel | 3508pF @ 100V | 99m Ω @ 16.5A, 10V | 4V @ 250μA | 33A Tc | 150nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF530STRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf530strlpbf-datasheets-7596.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | 3 | No | 1 | Single | 3.7W | 1 | TO-263 (D2Pak) | 670pF | 10 ns | 34ns | 24 ns | 23 ns | 14A | 20V | 100V | 3.7W Ta 88W Tc | 160mOhm | N-Channel | 670pF @ 25V | 160mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 26nC @ 10V | 160 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJA92EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqja92ept1ge3-datasheets-2699.pdf | PowerPAK® SO-8 | 1.267mm | 4 | 14 Weeks | unknown | YES | SINGLE | GULL WING | 1 | 68W | 1 | 175°C | R-PSSO-G4 | 15 ns | 24 ns | 57A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 68W Tc | 0.0095Ohm | 54 mJ | 80V | N-Channel | 2650pF @ 25V | 9.5m Ω @ 10A, 10V | 3.5V @ 250μA | 57A Tc | 45nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ461EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqj461ept1ge3-datasheets-6753.pdf | PowerPAK® SO-8 | 1.14mm | 12 Weeks | 1 | 83W | 175°C | PowerPAK® SO-8 | 16 ns | 70 ns | -30A | 20V | 60V | -2V | 83W Tc | -60V | P-Channel | 4710pF @ 30V | 16mOhm @ 14.4A, 10V | 2.5V @ 250μA | 30A Tc | 140nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJA02EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sqja02ept1ge3-datasheets-3627.pdf | PowerPAK® SO-8 | 1.267mm | 14 Weeks | 1 | 68W | 175°C | PowerPAK® SO-8 | 19 ns | 30 ns | 75A | 20V | 60V | 68W Tc | 4mOhm | 60V | N-Channel | 4700pF @ 25V | 4.8mOhm @ 10A, 10V | 3.5V @ 250μA | 60A Tc | 80nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4162DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4162dyt1ge3-datasheets-8297.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 7.9mOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 5W | 1 | 20 ns | 15ns | 10 ns | 25 ns | 13.6A | 20V | SILICON | SWITCHING | 1V | 2.5W Ta 5W Tc | 30V | N-Channel | 1155pF @ 15V | 1 V | 7.9m Ω @ 20A, 10V | 3V @ 250μA | 19.3A Tc | 30nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SI7852ADP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7852adpt1ge3-datasheets-9431.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 17mOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5W | 1 | FET General Purpose Power | R-XDSO-C5 | 16 ns | 9ns | 9 ns | 26 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 80V | 2.5V | 5W Ta 62.5W Tc | 60A | 45 mJ | N-Channel | 1825pF @ 40V | 2.5 V | 17m Ω @ 10A, 10V | 4.5V @ 250μA | 30A Tc | 45nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFR9010TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfr9010pbf-datasheets-4325.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 8 Weeks | 1.437803g | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 40 | 25W | 1 | Other Transistors | R-PSSO-G2 | 6.1 ns | 47ns | 35 ns | 13 ns | 5.3A | 20V | SILICON | DRAIN | SWITCHING | 50V | 25W Tc | 0.5Ohm | -50V | P-Channel | 240pF @ 25V | 500m Ω @ 2.8A, 10V | 4V @ 250μA | 5.3A Tc | 9.1nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SI7846DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7846dpt1e3-datasheets-4892.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 5 | 14 Weeks | 506.605978mg | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Powers | R-XDSO-C5 | 12 ns | 7ns | 10 ns | 22 ns | 4A | 20V | SILICON | DRAIN | SWITCHING | 1.9W Ta | 4A | 50A | 0.05Ohm | 150V | N-Channel | 50m Ω @ 5A, 10V | 4.5V @ 250μA | 4A Ta | 36nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SIRC18DP-T1-GE3 | Vishay Siliconix | $1.04 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sirc18dpt1ge3-datasheets-1933.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | unknown | 30V | 54.3W Tc | N-Channel | 5060pF @ 15V | 1.1m Ω @ 15A, 10V | 2.4V @ 250μA | 60A Tc | 111nC @ 10V | Schottky Diode (Body) | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM90142E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum90142ege3-datasheets-6667.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | TO-263 (D2Pak) | 200V | 375W Tc | N-Channel | 3120pF @ 100V | 15mOhm @ 30A, 10V | 4V @ 250μA | 90A Tc | 87nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4048DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si4048dyt1ge3-datasheets-0258.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 13 Weeks | No SVHC | 8 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 30 | 2.5W | 1 | FET General Purpose Power | Not Qualified | 8 ns | 19.3A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 1V | 2.5W Ta 5.7W Tc | N-Channel | 2060pF @ 15V | 85m Ω @ 15A, 10V | 3V @ 250μA | 19.3A Tc | 51nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8461DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si8461dbt2e1-datasheets-1707.pdf | 4-XFBGA, CSPBGA | Lead Free | 4 | 15 Weeks | Unknown | 100mOhm | 4 | yes | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | BALL | 260 | 4 | 1 | Single | 30 | 780mW | 1 | Other Transistors | 15 ns | 25ns | 10 ns | 35 ns | -3.7A | 8V | SILICON | SWITCHING | 20V | -1V | 780mW Ta 1.8W Tc | 2.5A | -20V | P-Channel | 610pF @ 10V | 100m Ω @ 1.5A, 4.5V | 1V @ 250μA | 24nC @ 8V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRL640STRLPBF | Vishay Siliconix | $1.68 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irl640strlpbf-datasheets-2956.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 180mOhm | 3 | Tin | No | 17A | 200V | 1 | Single | 3.1W | 1 | D2PAK | 4.39nF | 8 ns | 83ns | 52 ns | 44 ns | 17A | 10V | 200V | 3.1W Ta 125W Tc | 180mOhm | 200V | N-Channel | 1800pF @ 25V | 180mOhm @ 10A, 5V | 2V @ 250μA | 17A Tc | 66nC @ 5V | 2.7 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SUM70060E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum70060ege3-datasheets-3536.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | EAR99 | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 131A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 375W Tc | 240A | 0.0062Ohm | 125 mJ | N-Channel | 3330pF @ 50V | 5.6m Ω @ 30A, 10V | 4V @ 250μA | 131A Tc | 81nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD50P03-07_GE3 | Vishay Siliconix | $12.16 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50p0307ge3-datasheets-4543.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | 136W | 1 | TO-252AA | 11 ns | 12ns | 28 ns | 63 ns | 50A | 20V | 30V | 136W Tc | P-Channel | 5490pF @ 25V | 7mOhm @ 20A, 10V | 2.5V @ 250μA | 50A Tc | 146nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4774DY-T1-GE3 | Vishay Siliconix | $1.42 |
Min: 1 Mult: 1 |
download | SkyFET®, TrenchFET® | Surface Mount | -55°C~150°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4774dyt1ge3-datasheets-8743.pdf | 8-SOIC (0.154, 3.90mm Width) | 13 Weeks | 540.001716mg | 9.5mOhm | 1 | 8-SO | 8 ns | 13ns | 9 ns | 14 ns | 16A | 20V | 30V | 5W Tc | 7.9mOhm | N-Channel | 1025pF @ 15V | 9.5mOhm @ 10A, 10V | 2.3V @ 1mA | 16A Tc | 14.3nC @ 4.5V | Schottky Diode (Body) | 4.5V 10V | ±20V |
