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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Temperature Grade | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | High Level Output Current | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| IRF9510STRLPBF | Vishay Siliconix | $1.20 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9510strlpbf-datasheets-7460.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 1.2Ohm | 3 | No | 1 | Single | 3.7W | 1 | D2PAK | 200pF | 10 ns | 27ns | 17 ns | 15 ns | -4A | 20V | 100V | 3.7W Ta 43W Tc | 1.2Ohm | -100V | P-Channel | 200pF @ 25V | 1.2Ohm @ 2.4A, 10V | 4V @ 250μA | 4A Tc | 8.7nC @ 10V | 1.2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM300BIC01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF830STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-irf830strlpbf-datasheets-8512.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 11 Weeks | 1.437803g | 1.5Ohm | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 610pF | 8.2 ns | 16ns | 16 ns | 42 ns | 4.5A | 20V | 500V | 74W Tc | 1.5Ohm | N-Channel | 610pF @ 25V | 1.5Ohm @ 2.7A, 10V | 4V @ 250μA | 4.5A Tc | 38nC @ 10V | 1.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9233DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg9233dyt1-datasheets-2750.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 1μA | 8 | 540.001716mg | 12V | 2.7V | 30Ohm | 8 | no | unknown | 2 | e0 | Tin/Lead (Sn/Pb) | 400mW | DUAL | GULL WING | 8 | 400mW | Multiplexer or Switches | 3/5V | Not Qualified | 75 ns | 50 ns | Single | 2 | SEPARATE OUTPUT | 30Ohm | 30Ohm | BREAK-BEFORE-MAKE | NC | 1:1 | 2.7V~12V | SPST - NO | 100pA | 7pF 13pF | 75ns, 50ns | 2pC | 400m Ω | -90dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9120PBF | Vishay Siliconix | $2.66 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9120trpbf-datasheets-5334.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 600mOhm | 3 | Tin | No | 56A | 100V | 1 | Single | 2.5W | 1 | D-Pak | 390pF | 9.5 ns | 29ns | 25 ns | 21 ns | 5.6A | 20V | 100V | -4V | 2.5W Ta 42W Tc | 600mOhm | P-Channel | 390pF @ 25V | 600mOhm @ 3.4A, 10V | 4V @ 250μA | 5.6A Tc | 18nC @ 10V | 600 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9232DY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1.75mm | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg9233dyt1-datasheets-2750.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 3.9mm | 8 | no | unknown | 2 | e0 | TIN LEAD | YES | DUAL | GULL WING | 240 | 3V | 8 | 1 | 30 | Multiplexer or Switches | 3/5V | 2 | Not Qualified | R-PDSO-G8 | SEPARATE OUTPUT | 30Ohm | 74 dB | 0.4Ohm | BREAK-BEFORE-MAKE | NO | 1:1 | 2.7V~12V | SPST - NC | 100pA | 7pF 13pF | 75ns, 50ns | 2pC | 400m Ω | -90dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG33N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihg33n60ege3-datasheets-9756.pdf | TO-247-3 | Lead Free | 14 Weeks | 38.000013g | Unknown | 3 | Tin | No | 1 | Single | 278W | 1 | TO-247AC | 3.508nF | 56 ns | 90ns | 80 ns | 150 ns | 33A | 20V | 600V | 2V | 278W Tc | 99mOhm | 600V | N-Channel | 3508pF @ 100V | 99mOhm @ 16.5A, 10V | 4V @ 250μA | 33A Tc | 150nC @ 10V | 99 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM200BCA01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2016 | CDIP | 36V | 13V | 14 | 825mW | 22V | 7V | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG73N60E-GE3 | Vishay Siliconix | $9.82 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg73n60ege3-datasheets-0381.pdf | TO-247-3 | 15.87mm | 20.82mm | 5.31mm | Lead Free | 3 | 14 Weeks | 38.000013g | Unknown | 39mOhm | 3 | AVALANCHE RATED | Tin | No | 3 | 1 | Single | 520W | 1 | FET General Purpose Power | 63 ns | 105ns | 120 ns | 290 ns | 73A | 20V | SILICON | SWITCHING | 2V | 520W Tc | TO-247AC | 600V | N-Channel | 7700pF @ 100V | 39m Ω @ 36A, 10V | 4V @ 250μA | 73A Tc | 362nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 9073704PA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | -55°C~125°C TA | 1 (Unlimited) | CMOS | 5.08mm | Non-RoHS Compliant | 2016 | 9.78mm | 7.62mm | 8 | 1 | NO | DUAL | THROUGH-HOLE | NOT SPECIFIED | 15V | 2.54mm | 8 | 1 | NOT SPECIFIED | 1 | R-GDIP-T8 | -15V | 25Ohm | 82 dB | 88ns | 1:1 | SPST - NC | ±15V | 250pA | 12pF 12pF | 89ns, 80ns | 38pC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC40ASPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfbc40astrlpbf-datasheets-5609.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 1.2Ohm | 3 | No | 1 | Single | 125W | 1 | D2PAK | 1.036nF | 13 ns | 23ns | 18 ns | 31 ns | 6.2A | 30V | 600V | 125W Tc | 1.2Ohm | 600V | N-Channel | 1036pF @ 25V | 4 V | 1.2Ohm @ 3.7A, 10V | 4V @ 250μA | 6.2A Tc | 42nC @ 10V | 1.2 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 92041022A | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | LCC | 36V | 13V | 20 | No | 4 | 1.2W | 22V | 7V | 4 | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB35N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb35n60ege3-datasheets-2298.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 650V | 250W Tc | N-Channel | 2760pF @ 100V | 94m Ω @ 17A, 10V | 4V @ 250μA | 32A Tc | 132nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 89961012A | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | 1 (Unlimited) | 125°C | -55°C | CMOS | Non-RoHS Compliant | LCC | 20 | 36V | 13V | 20 | 2 | QUAD | NO LEAD | 20 | MILITARY | 2 | DPST | 900mW | Multiplexer or Switches | 5+-15V | Not Qualified | 22V | 7V | 4 | SEPARATE OUTPUT | BREAK-BEFORE-MAKE | 150ns | NO | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3456DDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si3456ddvt1ge3-datasheets-0664.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | 40mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1.7W | 1 | FET General Purpose Power | 12 ns | 13ns | 13 ns | 16 ns | 5A | 20V | SILICON | SWITCHING | 30V | 30V | 1.7W Ta 2.7W Tc | 5A | N-Channel | 325pF @ 15V | 40m Ω @ 5A, 10V | 3V @ 250μA | 6.3A Tc | 9nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 9204201XC | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~125°C TA | Bulk | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2011 | FlatPack | 16 | 44V | 13V | 16 | No | 1 | DUAL | 15V | 16 | 8 | SINGLE-ENDED MULTIPLEXER | 1 | 20V | 5V | -15V | 30mA | 8 | 100Ohm | 75 dB | 15Ohm | 225ns | 8:1 | ±15V | 500pA | 3pF 26pF | 150ns, 150ns | 20pC | 15 Ω (Max) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB9N65APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-irfb9n65apbf-datasheets-3633.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 930mOhm | 3 | Tin | No | 1 | Single | 167W | 1 | TO-220AB | 1.417nF | 14 ns | 20ns | 18 ns | 34 ns | 8.5A | 30V | 650V | 4V | 167W Tc | 739 ns | 930mOhm | N-Channel | 1417pF @ 25V | 4 V | 930mOhm @ 5.1A, 10V | 4V @ 250μA | 8.5A Tc | 48nC @ 10V | 930 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG413LDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | 85°C | -40°C | 1μA | ROHS3 Compliant | 2015 | /files/vishaysiliconix-dg411ldqt1-datasheets-8917.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 1μA | 10 Weeks | 1.627801g | Unknown | 12V | 2.7V | 50Ohm | 16 | 1μA | 900mW | DG413 | 4 | 900mW | 4 | 16-DIP | 280MHz | SPST | 85 ns | 60 ns | 6V | 5V | Dual, Single | 3V | 4 | 4 | 17Ohm | 2.7V~12V ±3V~6V | 1:1 | SPST - NO/NC | 250pA | 5pF 6pF | 19ns, 12ns | 5pC | -95dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP064PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfp064pbf-datasheets-4272.pdf | 60V | 70A | TO-247-3 | 15.87mm | 25.11mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 9mOhm | 3 | Tin | No | 80A | 60V | 1 | Single | 300W | 1 | 175°C | TO-247-3 | 7.4nF | 21 ns | 190ns | 190 ns | 110 ns | 70A | 20V | 60V | 4V | 300W Tc | 9mOhm | 60V | N-Channel | 7400pF @ 25V | 4 V | 9mOhm @ 78A, 10V | 4V @ 250μA | 70A Tc | 190nC @ 10V | 9 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG611DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | NMOS | -1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg612dyt1-datasheets-2726.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | Lead Free | 1μA | 16 | 665.986997mg | 18V | 10V | 45Ohm | 16 | yes | VIDEO APPLICATION | unknown | 4 | 5nA | e3 | Matte Tin (Sn) | 600mW | GULL WING | 260 | 15V | 1.27mm | DG611 | 16 | 1 | 40 | 600mW | Multiplexer or Switches | 15-3V | Not Qualified | 500MHz | SPST | 35 ns | 25 ns | 15V | Dual, Single | 10V | -3V | 4 | SEPARATE OUTPUT | 45Ohm | 74 dB | 2Ohm | BREAK-BEFORE-MAKE | 50ns | NC | 10V~18V ±10V~15V | 1:1 | SPST - NC | 250pA | 3pF 2pF | 35ns, 25ns | 4pC | 2 Ω | -87dB @ 5MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3430DV-T1-GE3 | Vishay Siliconix | $1.09 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si3430dvt1e3-datasheets-4579.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | 6 | 14 Weeks | 19.986414mg | Unknown | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1.14W | 1 | FET General Purpose Power | 9 ns | 11ns | 9 ns | 16 ns | 1.8A | 20V | SILICON | 2V | 1.14W Ta | 100V | N-Channel | 2 V | 170m Ω @ 2.4A, 10V | 2V @ 250μA (Min) | 1.8A Ta | 6.6nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG412LDQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BICMOS | 1μA | ROHS3 Compliant | 2007 | /files/vishaysiliconix-dg411ldqt1-datasheets-8917.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | Lead Free | 1μA | 16 | 172.98879mg | 12V | 2.7V | 50Ohm | 16 | yes | 4 | 20nA | e3 | Matte Tin (Sn) | 450mW | GULL WING | 260 | 5V | 0.65mm | DG412 | 16 | 1 | 40 | 450mW | Multiplexer or Switches | 3/12/+-5V | Not Qualified | 280MHz | SPST | 50 ns | 35 ns | 6V | Dual, Single | 3V | -5V | 4 | SEPARATE OUTPUT | 17Ohm | 68 dB | BREAK-BEFORE-MAKE | 60ns | NO | 2.7V~12V ±3V~6V | 1:1 | SPST - NO | 250pA | 5pF 6pF | 19ns, 12ns | 5pC | -95dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD6N62E-GE3 | Vishay Siliconix | $1.24 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd6n62et1ge3-datasheets-6795.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 18 Weeks | 1.437803g | Unknown | 3 | No | 1 | Single | D-PAK (TO-252AA) | 578pF | 12 ns | 10ns | 16 ns | 22 ns | 6A | 20V | 620V | 78W Tc | 900mOhm | N-Channel | 578pF @ 100V | 900mOhm @ 3A, 10V | 4V @ 250μA | 6A Tc | 34nC @ 10V | 900 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2017DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2017dnt1e4-datasheets-5328.pdf | 16-VQFN Exposed Pad | 4mm | 950μm | 4mm | 1μA | 16 | 57.09594mg | 5.5V | 2V | 3.7Ohm | 16 | yes | VIDEO APPLICATION | 2 | e4 | PALLADIUM GOLD OVER NICKEL | 1.88W | QUAD | NO LEAD | 260 | 3V | 0.65mm | DG2017 | 16 | 2 | 30 | Multiplexer or Switches | 3V | 2 | Not Qualified | 85 ns | 46 ns | Single | SEPARATE OUTPUT | 3.7Ohm | 51 dB | 0.3Ohm | BREAK-BEFORE-MAKE | 48ns | 91ns | 2:2 | 2V~5.5V | DPDT | 500pA | 43pF | 85ns, 35ns | 2pC | 300m Ω (Max) | -69dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL11N50APBF | Vishay Siliconix | $0.54 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfsl11n50apbf-datasheets-8150.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 9.65mm | 4.83mm | Lead Free | 3 | 8 Weeks | 2.387001g | 550mOhm | AVALANCHE RATED | Tin | No | 3 | 1 | Single | 1 | R-PSIP-T3 | 14 ns | 34ns | 27 ns | 32 ns | 11A | 30V | SILICON | DRAIN | SWITCHING | 190W Tc | 44A | 390 mJ | 500V | N-Channel | 1426pF @ 25V | 550m Ω @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 51nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2038DS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | 20nA | ROHS3 Compliant | /files/vishaysiliconix-dg2037dst1-datasheets-7724.pdf | SOT-23-8 | 1μA | 5.5V | 1.8V | 5Ohm | 8 | 20nA | 515mW | DG2038 | 2 | 515mW | 2 | SOT-23-8 | SPST | 35 ns | 31 ns | Single | 2 | 2 | 5Ohm | 1:1 | 1.8V~5.5V | SPST - NO | 1nA | 15pF 17pF | 30ns, 22ns | 1pC | 200mOhm (Max) | -67dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8425DB-T1-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si8425dbt1e1-datasheets-9103.pdf | 4-UFBGA, WLCSP | Lead Free | 21 Weeks | 23mOhm | 4 | yes | EAR99 | Tin | No | e3 | 260 | 1 | Single | 30 | 2.7W | Other Transistors | 50 ns | 50ns | 200 ns | 600 ns | 9.3A | 10V | 20V | 1.1W Ta 2.7W Tc | -20V | P-Channel | 2800pF @ 10V | 23m Ω @ 2A, 4.5V | 900mV @ 250μA | 110nC @ 10V | 1.8V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2715DL-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 10nA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg2716dlt1e3-datasheets-5370.pdf | 5-TSSOP, SC-70-5, SOT-353 | 2mm | 1μA | 5 | 14 Weeks | No SVHC | 3.6V | 1.5V | 1.5Ohm | 5 | yes | No | 1 | 10nA | e3 | Matte Tin (Sn) | 3V | 250mW | DUAL | GULL WING | 260 | 1.8V | DG2715 | 5 | 1 | 40 | 250mW | Multiplexer or Switches | SPST | 36 ns | 33 ns | Single | 1 | 600mOhm | 400mOhm | 57 dB | BREAK-BEFORE-MAKE | NO | 1:1 | 1.5V~3.6V | SPST - NO | 1nA | 72pF | 29ns, 26ns | 9pC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2307CDS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si2307cdst1ge3-datasheets-1782.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | 3 | 14 Weeks | 1.437803g | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1 | Other Transistors | 40 ns | 40ns | 40 ns | 20 ns | 2.7A | 20V | SILICON | SWITCHING | 30V | 1.1W Ta 1.8W Tc | 0.088Ohm | P-Channel | 340pF @ 15V | 88m Ω @ 3.5A, 10V | 3V @ 250μA | 3.5A Tc | 6.2nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2799DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2799dnt1e4-datasheets-5417.pdf | 16-WFQFN | 3mm | 900μm | 3mm | 1μA | 16 | 12 Weeks | 57.09594mg | 4.3V | 1.65V | 430mOhm | 16 | yes | No | 2 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.385W | QUAD | 260 | 3V | 0.5mm | DG2799 | 16 | 2 | 40 | 1.385W | Multiplexer or Switches | 2 | 57 ns | 45 ns | Single | 8 | 4 | 450mOhm | 75 dB | 0.05Ohm | BREAK-BEFORE-MAKE | 60ns | 2:2 | 1.65V~4.3V | DPDT | 1nA | 102pF | 57ns, 45ns | 160pC | 50m Ω | -75dB @ 100kHz |
