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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIS990DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sis990dnt1ge3-datasheets-7450.pdf | PowerPAK® 1212-8 Dual | 6 | 14 Weeks | EAR99 | No | 25W | C BEND | 2 | Dual | 2 | FET General Purpose Powers | S-PDSO-C6 | 8 ns | 8ns | 6 ns | 8 ns | 12.1A | 20V | SILICON | DRAIN | SWITCHING | 100V | METAL-OXIDE SEMICONDUCTOR | 0.085Ohm | 100V | 2 N-Channel (Dual) | 250pF @ 50V | 85m Ω @ 8A, 10V | 4V @ 250μA | 8nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1307EDL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1307edlt1e3-datasheets-7903.pdf | SC-70, SOT-323 | 3 | yes | EAR99 | ESD PROTECTION | unknown | e3 | PURE MATTE TIN | YES | DUAL | GULL WING | 260 | 3 | 30 | 1 | Other Transistors | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | 12V | 12V | 290mW Ta | 0.85A | 0.29Ohm | P-Channel | 290m Ω @ 1A, 4.5V | 450mV @ 250μA (Min) | 850mA Ta | 5nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4943BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4943bdyt1e3-datasheets-9089.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 19mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.1W | GULL WING | 260 | SI4943 | 8 | 2 | Dual | 40 | 1.1W | 2 | Other Transistors | 11 ns | 10ns | 10 ns | 94 ns | -8.4A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 6.3A | -20V | 2 P-Channel (Dual) | -1 V | 19m Ω @ 8.4A, 10V | 3V @ 250μA | 6.3A | 25nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| SI1400DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si1400dlt1e3-datasheets-7906.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 13 Weeks | 7.512624mg | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 568mW | 1 | FET General Purpose Powers | 10 ns | 30ns | 8 ns | 14 ns | 1.6A | 12V | SILICON | 20V | 20V | 568mW Ta | N-Channel | 150m Ω @ 1.7A, 4.5V | 600mV @ 250μA (Min) | 1.6A Ta | 4nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||
| SQS966ENW-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount, Wettable Flank | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqs966enwt1ge3-datasheets-0180.pdf | PowerPAK® 1212-8W Dual | PowerPAK® 1212-8W Dual | 60V | 27.8W Tc | 2 N-Channel (Dual) | 572pF @ 25V | 36mOhm @ 1.25A, 10V | 2.5V @ 250μA | 6A Tc | 8.8nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5456DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5456dut1ge3-datasheets-2334.pdf | 8-PowerVDFN | 3 | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | 260 | 8 | 30 | 3.1W | 1 | R-XDSO-N3 | 20 ns | 15ns | 10 ns | 20 ns | 12A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.1W Ta 31W Tc | 50A | 0.01Ohm | 20V | N-Channel | 1200pF @ 10V | 10m Ω @ 9.3A, 10V | 2.5V @ 250μA | 12A Tc | 30nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SI1034CX-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1034cxt1ge3-datasheets-0871.pdf | SOT-563, SOT-666 | 6 | 14 Weeks | 6 | EAR99 | No | e3 | MATTE TIN | 220mW | FLAT | 260 | 6 | 30 | 220mW | 2 | FET General Purpose Power | 11 ns | 16ns | 11 ns | 26 ns | 610mA | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 43pF @ 10V | 396m Ω @ 500mA, 4.5V | 1V @ 250μA | 610mA Ta | 2nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI7621DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7621dnt1ge3-datasheets-2383.pdf | PowerPAK® 1212-8 | Lead Free | 5 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | 30 | 3.1W | 1 | Other Transistors | S-XDSO-C5 | 8 ns | 75ns | 60 ns | 25 ns | 4A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 3.1W Ta 12.5W Tc | 4A | 0.09Ohm | P-Channel | 300pF @ 10V | 90m Ω @ 3.9A, 4.5V | 2V @ 250μA | 4A Tc | 6.2nC @ 5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||
| SIB912DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sib912dkt1ge3-datasheets-3512.pdf | PowerPAK® SC-75-6L Dual | 1.6mm | 750μm | 1.6mm | 6 | 14 Weeks | 95.991485mg | Unknown | 6 | yes | EAR99 | No | 3.1W | 260 | SIB912 | 6 | 2 | Dual | 40 | 1.1W | 1 | FET General Purpose Power | 5 ns | 10ns | 10 ns | 24 ns | 1.5A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 400mV | 20V | 2 N-Channel (Dual) | 95pF @ 10V | 216m Ω @ 1.8A, 4.5V | 1V @ 250μA | 3nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| SIJ458DP-T1-GE3 | Vishay Siliconix | $4.53 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sij458dpt1ge3-datasheets-2581.pdf | PowerPAK® SO-8 | 4 | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | SINGLE | GULL WING | 260 | 8 | 1 | 40 | 5W | 1 | R-PSSO-G4 | 38 ns | 44ns | 24 ns | 49 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 30V | 30V | 1V | 5W Ta 69.4W Tc | 35.5A | 0.0022Ohm | N-Channel | 4810pF @ 15V | 1 V | 2.2m Ω @ 20A, 10V | 2.5V @ 250μA | 60A Tc | 122nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SQJ968EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TA | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqj968ept1ge3-datasheets-4319.pdf | PowerPAK® SO-8 Dual | 4 | 12 Weeks | Unknown | 8 | EAR99 | 25W | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 25W | 2 | R-PSSO-G4 | 18A | 20V | SILICON | DRAIN | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 2V | 42W Tc | 0.0336Ohm | 4 mJ | 2 N-Channel (Dual) | 714pF @ 30V | 33.6m Ω @ 4.8A, 10V | 2.5V @ 250μA | 23.5A Tc | 18.5nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7882DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7882dpt1ge3-datasheets-0309.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 506.605978mg | No SVHC | 5.5mOhm | 8 | yes | EAR99 | FAST SWITCHING | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5W | 1 | FET General Purpose Power | R-PDSO-C5 | 28 ns | 32ns | 32 ns | 82 ns | 13A | 8V | 12V | SILICON | DRAIN | SWITCHING | 1.4V | 1.9W Ta | 50A | 7.2 mJ | N-Channel | 1.4 V | 5.5m Ω @ 17A, 4.5V | 1.4V @ 250μA | 13A Ta | 30nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||
| SQJB00EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqjb00ept1ge3-datasheets-5369.pdf | PowerPAK® SO-8 Dual | 4 | 14 Weeks | unknown | YES | SINGLE | GULL WING | 2 | R-PSSO-G4 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 48W | 25A | 84A | 0.013Ohm | 26.5 mJ | 2 N-Channel (Dual) | 1700pF @ 25V | 13m Ω @ 10A, 10V | 3.5V @ 250μA | 30A Tc | 35nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIE854DF-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -50°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie854dft1ge3-datasheets-2529.pdf | 10-PolarPAK® (L) | Lead Free | No SVHC | 14.2mOhm | 10 | No | Single | 5.2W | 1 | 10-PolarPAK® (L) | 3.1nF | 15 ns | 10ns | 10 ns | 30 ns | 13.2A | 20V | 100V | 100V | 2.5V | 5.2W Ta 125W Tc | 14.2mOhm | 100V | N-Channel | 3100pF @ 50V | 14.2mOhm @ 13.2A, 10V | 4.4V @ 250μA | 60A Tc | 75nC @ 10V | 14.2 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI5936DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si5936dut1ge3-datasheets-6643.pdf | PowerPAK® ChipFET™ Dual | 3.08mm | 850μm | 1.98mm | 6 | 14 Weeks | 8 | EAR99 | Tin | 2.3W | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2.3W | 2 | R-PDSO-N6 | 15 ns | 65ns | 10 ns | 15 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 10.4W | 6A | 0.03Ohm | 2 N-Channel (Dual) | 320pF @ 15V | 30m Ω @ 5A, 10V | 2.2V @ 250μA | 11nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| SIR406DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sir406dpt1ge3-datasheets-3244.pdf | PowerPAK® SO-8 | 5 | 506.605978mg | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 5W | 1 | FET General Purpose Power | R-XDSO-C5 | 22 ns | 20ns | 10 ns | 28 ns | 40A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 5W Ta 48W Tc | 27A | 70A | 45 mJ | 25V | N-Channel | 2083pF @ 10V | 3.8m Ω @ 15A, 10V | 2.4V @ 250μA | 40A Tc | 50nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SQ1922EEH-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2018 | /files/vishaysiliconix-sq1922eeht1ge3-datasheets-9023.pdf | 6-TSSOP, SC-88, SOT-363 | 1.1mm | 6 | 12 Weeks | EAR99 | unknown | YES | GULL WING | 2 | 1.5W | 2 | 175°C | R-PDSO-G6 | 10 ns | 15 ns | 840mA | 12V | SILICON | METAL-OXIDE SEMICONDUCTOR | 0.84A | 0.6Ohm | 20V | 2 N-Channel (Dual) | 50pF @ 10V | 350m Ω @ 400mA, 4.5V | 1.5V @ 250μA | 840mA Tc | 1.2nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM90N06-5M5P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sum90n065m5pe3-datasheets-3287.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Lead Free | 1.437803g | No SVHC | 5.5MOhm | 3 | No | 1 | Single | 3.75W | 1 | TO-263 (D2Pak) | 4.7nF | 16 ns | 10ns | 8 ns | 25 ns | 90A | 20V | 60V | 3.75W Ta 272W Tc | 5.5mOhm | 60V | N-Channel | 4700pF @ 30V | 5.5mOhm @ 20A, 10V | 4.5V @ 250μA | 90A Tc | 120nC @ 10V | 5.5 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SUP53P06-20-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sup53p0620e3-datasheets-0883.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 14 Weeks | 6.000006g | No SVHC | 19.5MOhm | 3 | EAR99 | No | 3 | 1 | Single | 3.1W | Other Transistors | 10 ns | 7ns | 40 ns | 70 ns | 9.2A | 20V | 60V | -1V | 3.1W Ta 104.2W Tc | TO-220AB | -60V | P-Channel | 3500pF @ 25V | 19.5m Ω @ 30A, 10V | 3V @ 250μA | 9.2A Ta 53A Tc | 115nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SUP60N06-12P-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sup60n0612pge3-datasheets-3346.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 6.000006g | 12mOhm | 3 | EAR99 | No | 3 | 1 | Single | 3.25W | 1 | FET General Purpose Power | 11 ns | 11ns | 8 ns | 16 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 3.25W Ta 100W Tc | TO-220AB | 80A | 80 mJ | N-Channel | 1970pF @ 30V | 12m Ω @ 30A, 10V | 4.5V @ 250μA | 60A Tc | 55nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SQ4920EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sq4920eyt1ge3-datasheets-4927.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 12 Weeks | 506.605978mg | Unknown | 17.5mOhm | 8 | No | 4.4W | 2 | Dual | 4.4W | 2 | 8-SO | 1.465nF | 7 ns | 10ns | 8 ns | 25 ns | 8A | 20V | 30V | 2V | 4.4W | 14.5mOhm | 2 N-Channel (Dual) | 1465pF @ 15V | 14.5mOhm @ 6A, 10V | 2.5V @ 250μA | 8A | 30nC @ 10V | Logic Level Gate | 14.5 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||
| SUD50N04-37P-T4-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n0437pt4e3-datasheets-3671.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 37mOhm | 8A | 40V | 2W Ta 10.8W Tc | N-Channel | 640pF @ 20V | 37m Ω @ 5A, 10V | 2.5V @ 250μA | 5.4A Ta 8A Tc | 20nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ570EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj570ept1ge3-datasheets-6239.pdf | PowerPAK® SO-8 Dual | 12 Weeks | PowerPAK® SO-8 Dual | 100V | 27W | N and P-Channel | 650pF @ 25V 600pF @ 25V | 45mOhm @ 6A, 10V, 146mOhm @ 6A, 10V | 2.5V @ 250μA | 15A Tc 9.5A Tc | 20nC @ 10V, 15nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1489EDH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1489edht1ge3-datasheets-8490.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 15 Weeks | 7.512624mg | 48mOhm | 6 | EAR99 | No | DUAL | GULL WING | 6 | 1 | Single | 156W | 1 | Other Transistors | 90 ns | 170ns | 630 ns | 690 ns | 2A | 5V | SILICON | SWITCHING | 8V | 2.8W Tc | 2A | -8V | P-Channel | 48m Ω @ 3A, 4.5V | 700mV @ 250μA | 2A Tc | 16nC @ 4.5V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||||||||||
| SQ2337ES-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sq2337est1ge3-datasheets-7871.pdf | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | 3 | 3W | 1 | SOT-23-3 (TO-236) | 2.2A | 20V | 80V | 3W Tc | P-Channel | 620pF @ 30V | 290mOhm @ 1A, 4.5V | 2.5V @ 250μA | 2.2A Tc | 18nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP70N03-09BP-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup70n0309bpe3-datasheets-3111.pdf | TO-220-3 | 3 | Unknown | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | Single | 93W | 1 | FET General Purpose Power | 10 ns | 8ns | 9 ns | 25 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 93W Tc | TO-220AB | 70A | 200A | 0.009Ohm | 30V | N-Channel | 1500pF @ 25V | 800 mV | 9m Ω @ 30A, 10V | 2V @ 250μA | 70A Tc | 19nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SISA14DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sisa14dnt1ge3-datasheets-8389.pdf | PowerPAK® 1212-8 | 5 | 14 Weeks | 5.1mOhm | yes | EAR99 | DUAL | C BEND | 240 | 40 | 1 | S-PDSO-C5 | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3.57W Ta 26.5W Tc | 80A | 11.25 mJ | N-Channel | 1450pF @ 15V | 5.1m Ω @ 10A, 10V | 2.2V @ 250μA | 20A Tc | 29nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3445DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3445dvt1ge3-datasheets-6159.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 19.986414mg | No SVHC | 42MOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 2W | 1 | Other Transistors | 3.15nF | 20 ns | 50ns | 60 ns | 110 ns | 5.6A | 8V | -8V | SILICON | -1V | 2W Ta | 20A | -8V | P-Channel | -1 V | 42m Ω @ 5.6A, 4.5V | 1V @ 250μA | 25nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||
| SIR668ADP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir668adpt1re3-datasheets-0824.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 100V | 104W Tc | N-Channel | 3750pF @ 50V | 4.8mOhm @ 20A, 10V | 4V @ 250μA | 93.6A Tc | 81nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6661 | Vishay Siliconix | $16.59 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6661jtxl02-datasheets-9341.pdf | TO-205AD, TO-39-3 Metal Can | 9.4mm | 6.6mm | 8.15mm | 3 | Lead, Tin | No | 1 | Single | 6.25W | 1 | TO-39 | 50pF | 860mA | 20V | 90V | 725mW Ta 6.25W Tc | 4Ohm | 90V | N-Channel | 50pF @ 25V | 4Ohm @ 1A, 10V | 2V @ 1mA | 860mA Tc | 4 Ω | 5V 10V | ±20V |
