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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Interface | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | HTS Code | Packing Method | Number of Functions | Voltage - Input (Max) | Max Input Voltage | JESD-609 Code | Feature | Terminal Finish | Applications | Polarity | Surface Mount | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Accuracy | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Max Output Current | Min Input Voltage | Output Voltage | Output Current | Dropout Voltage | Output Type | Voltage - Load | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Function | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Breakdown Voltage | Threshold Voltage | Output Configuration | Fault Protection | Power - Max | Output Voltage 1 | Input Voltage-Nom | Input Voltage (Min) | Input Voltage (Max) | Power Dissipation-Max | JEDEC-95 Code | Current - Peak Output | Output Current per Channel | Current - Supply (Max) | Current - Output / Channel | Control Technique | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Current - Quiescent (Iq) | Output Voltage Accuracy | Avalanche Energy Rating (Eas) | Control Features | Current - Output | Voltage - Output (Min/Fixed) | Dropout Voltage1-Max | Voltage Tolerance-Max | Drain to Source Breakdown Voltage | Min Current Limit | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Voltage - Cutoff (VGS off) @ Id | Voltage - Breakdown (V(BR)GSS) | Current - Drain (Idss) @ Vds (Vgs=0) | Resistance - RDS(On) | Rds On (Typ) | Load Type | Motor Type - AC, DC | Number of Regulators | Protection Features | Voltage Dropout (Max) | PSRR | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| 2N4118A-2 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | DEPLETION MODE | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-2n4119ae3-datasheets-3988.pdf | TO-206AF, TO-72-4 Metal Can | 4 | 4 | yes | No | e3 | MATTE TIN | 300mW | BOTTOM | WIRE | Single | 1 | -40V | SILICON | AMPLIFIER | JUNCTION | 1.5 pF | N-Channel | 3pF @ 10V | 1V @ 1nA | 40V | 80μA @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL620STRR | Vishay Siliconix | $0.95 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irl620spbf-datasheets-5093.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 360pF | 5.2A | 200V | 3.1W Ta 50W Tc | N-Channel | 360pF @ 25V | 800mOhm @ 3.1A, 10V | 2V @ 250μA | 5.2A Tc | 16nC @ 5V | 800 mΩ | 4V 10V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N4338-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/vishaysiliconix-2n4338-datasheets-3999.pdf | TO-206AA, TO-18-3 Metal Can | Unknown | 3 | EAR99 | No | e3 | Matte Tin (Sn) | 300mW | Single | Other Transistors | -50V | JUNCTION | -57V | N-Channel | 7pF @ 15V | 300mV @ 100nA | 50V | 200μA @ 15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR120TRR | Vishay Siliconix | $0.71 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlr120trlpbf-datasheets-9045.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | EAR99 | AVALANCHE RATED | SINGLE | GULL WING | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 7.7A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 2.5W Ta 42W Tc | 31A | 0.27Ohm | 210 mJ | N-Channel | 490pF @ 25V | 270m Ω @ 4.6A, 5V | 2V @ 250μA | 7.7A Tc | 12nC @ 5V | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5433-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-2n5433e3-datasheets-4216.pdf | TO-206AC, TO-52-3 Metal Can | 3 | No | 300mW | Single | TO-206AC (TO-52) | 30pF | -25V | 300mW | N-Channel | 30pF @ 0V | 3V @ 3nA | 25V | 100mA @ 15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB13N50A | Vishay Siliconix | $1.66 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfb13n50apbf-datasheets-1142.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 6.000006g | 3 | No | 1 | Single | TO-220AB | 1.91nF | 15 ns | 39ns | 31 ns | 39 ns | 14A | 30V | 500V | 250W Tc | 450mOhm | 500V | N-Channel | 1910pF @ 25V | 450mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 81nC @ 10V | 450 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5115JTX02 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2016 | TO-206AA, TO-18-3 Metal Can | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7107DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7107dnt1ge3-datasheets-2911.pdf | PowerPAK® 1212-8 | 3.1496mm | 1.0668mm | 3.1496mm | Lead Free | 5 | Unknown | 10.6mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.5W | 1 | Other Transistors | S-XDSO-C5 | 27 ns | 55ns | 55 ns | 270 ns | -15.3A | 8V | SILICON | DRAIN | SWITCHING | -1V | 1.5W Ta | 40A | 20V | P-Channel | 10.8m Ω @ 15.3A, 4.5V | 1V @ 450μA | 9.8A Ta | 44nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| U291-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | DEPLETION MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-u290e3-datasheets-4280.pdf | TO-206AC, TO-52-3 Metal Can | 3 | 9 Weeks | yes | LOW INSERTION LOSS | 8541.21.00.95 | e3 | Matte Tin (Sn) | 500mW | BOTTOM | WIRE | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | O-MBCY-W3 | -30V | SILICON | GATE | SWITCHING | JUNCTION | 7Ohm | 30 pF | N-Channel | 160pF @ 0V | 1.5V @ 3nA | 30V | 200mA @ 10V | 7Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7848DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si7848dpt1e3-datasheets-6148.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 506.605978mg | 8 | 1 | Single | 1.83W | 1 | PowerPAK® SO-8 | 15 ns | 10ns | 10 ns | 50 ns | 10.4A | 20V | 40V | 1.83W Ta | 12mOhm | 40V | N-Channel | 9mOhm @ 14A, 10V | 3V @ 250μA | 10.4A Ta | 28nC @ 5V | 9 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5432-2 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-2n5433e3-datasheets-4216.pdf | TO-206AC, TO-52-3 Metal Can | TO-206AC (TO-52) | 300mW | N-Channel | 30pF @ 0V | 4V @ 3nA | 25V | 150mA @ 15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8415DB-T1-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si8415dbt1e1-datasheets-6296.pdf | 4-XFBGA, CSPBGA | 4 | No SVHC | 4 | yes | EAR99 | ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) | BOTTOM | BALL | 260 | 4 | 40 | 1.47W | 1 | Other Transistors | 15 ns | 32ns | 32 ns | 180 ns | -7.3A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 12V | -1V | 1.47W Ta | 5.3A | 25A | 0.037Ohm | P-Channel | 37m Ω @ 1A, 4.5V | 1V @ 250μA | 5.3A Ta | 30nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N4858JTVP02 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP0101K-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-tp0101kt1e3-datasheets-6443.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | No SVHC | 650mOhm | 3 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 350mW | DUAL | GULL WING | 260 | 3 | Single | 40 | 350mW | 1 | Other Transistors | 25 ns | 30ns | 30 ns | 55 ns | -580mA | 8V | SWITCHING | 20V | 700mV | 0.58A | -20V | P-Channel | -700 mV | 650m Ω @ 580mA, 4.5V | 1V @ 50μA | 2.2nC @ 4.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIC780ACD-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | DrMOS | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sic780acdt1ge3-datasheets-2534.pdf | 40-PowerWFQFN Module | 6mm | Lead Free | 17 Weeks | No SVHC | 40 | PWM | EAR99 | No | Bootstrap Circuit, Diode Emulation, Status Flag | Synchronous Buck Converters | 4.5V~5.5V | SIC780A | SWITCHING CONTROLLER | 50A | 50A | 4.5V~18V | 10 ns | 20 ns | 2 | Half Bridge | Over Temperature, Shoot-Through, UVLO | 50A | Inductive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM110N04-05H-E3 | Vishay Siliconix | $19.09 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum110n0405he3-datasheets-6698.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.414mm | 4.826mm | 9.652mm | 3 | Single | 3.75W | 1 | TO-263 (D2Pak) | 6.7nF | 20 ns | 95ns | 12 ns | 50 ns | 11A | 20V | 40V | 3.75W Ta 150W Tc | 5.3mOhm | 40V | N-Channel | 6700pF @ 25V | 5.3mOhm @ 30A, 10V | 5V @ 250μA | 110A Tc | 95nC @ 10V | 5.3 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIC651ACD-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | VRPower® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | Power MOSFET | /files/vishaysiliconix-sic651cdt1ge3-datasheets-7342.pdf | 31-PowerWFQFN | 16 Weeks | Logic, PWM | Bootstrap Circuit, Diode Emulation | General Purpose | 4.5V~5.5V | PowerPAK® MLP55-31L | 24V | Half Bridge | Over Current, Over Temperature, Shoot-Through, UVLO | 100A | 50A | 3Ohm LS + HS | Inductive, Capacitive, Resistive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7170DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7170dpt1ge3-datasheets-0190.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 506.605978mg | Unknown | 8 | yes | EAR99 | AVALANCHE RATED | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Powers | R-XDSO-C5 | 15 ns | 10ns | 8 ns | 35 ns | 40A | 20V | SILICON | DRAIN | 2.6V | 5W Ta 48W Tc | 70A | 0.0034Ohm | 30V | N-Channel | 4355pF @ 15V | 3.4m Ω @ 15A, 10V | 2.6V @ 250μA | 40A Tc | 100nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIC789ACD-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | VRPower® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Power MOSFET | 0.8mm | ROHS3 Compliant | /files/vishaysiliconix-sic789acdt1ge3-datasheets-7981.pdf | 40-PowerWFQFN Module | 6mm | 6mm | 43 | 19 Weeks | PWM | EAR99 | 8542.39.00.01 | 1 | Bootstrap Circuit, Diode Emulation, Status Flag | Synchronous Buck Converters | YES | 4.5V~5.5V | UNSPECIFIED | NO LEAD | NOT SPECIFIED | SWITCHING CONTROLLER | NOT SPECIFIED | S-XXSS-N43 | 4.5V~18V | Half Bridge | Shoot-Through, UVLO | 12V | 4.5V | 18V | 60A | PULSE WIDTH MODULATION | Inductive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIB414DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sib414dkt1ge3-datasheets-0366.pdf | PowerPAK® SC-75-6L | Lead Free | 3 | 26mOhm | 6 | yes | EAR99 | No | DUAL | 260 | 6 | 40 | 2.4W | 1 | FET General Purpose Power | S-XDSO-N3 | 7 ns | 13ns | 14 ns | 50 ns | 9A | 5V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.4W Ta 13W Tc | 9A | 20A | 8V | N-Channel | 732pF @ 4V | 26m Ω @ 7.9A, 4.5V | 1V @ 250μA | 9A Tc | 14.03nC @ 5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIC641ACD-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | VRPower® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | Power MOSFET | 31-PowerWFQFN | 16 Weeks | Logic, PWM | Bootstrap Circuit, Diode Emulation | General Purpose | 4.5V~5.5V | PowerPAK® MLP55-31L | 16V | Half Bridge | Over Current, Over Temperature, Shoot-Through, UVLO | 100A | 55A | 3Ohm LS + HS | Inductive, Capacitive, Resistive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR888DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir888dpt1ge3-datasheets-0520.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 506.605978mg | 8 | No | 1 | PowerPAK® SO-8 | 5.065nF | 32 ns | 14ns | 11 ns | 40 ns | 40A | 16V | 25V | 5W Ta 48W Tc | 3.25mOhm | N-Channel | 5065pF @ 15V | 3.25mOhm @ 15A, 10V | 2.2V @ 250μA | 40A Tc | 120nC @ 10V | 3.25 mΩ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9961ACY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 0°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 70°C | 0°C | BiCDMOS | 13mA | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si9961acyt1e3-datasheets-6976.pdf | 24-SOIC (0.295, 7.50mm Width) | 12V | 307.790773mg | 13.2V | 10.8V | 24 | Parallel | No | Media Player | 4.5V~5.5V | SI9961 | 24-SOIC | 2V~14V | Driver - Fully Integrated, Control and Power Stage | 1 | Half Bridge (2) | 1.8A | Voice Coil Motor | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP22N60S-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-sihp22n60se3-datasheets-4613.pdf | TO-220-3 | Lead Free | 3 | Unknown | 190mOhm | 3 | yes | No | e3 | Matte Tin (Sn) | 250W | SINGLE | 3 | 250W | 1 | FET General Purpose Power | 24 ns | 68ns | 59 ns | 77 ns | 22A | 20V | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2V | TO-220AB | 65A | 690 mJ | 600V | N-Channel | 2810pF @ 25V | 190m Ω @ 11A, 10V | 4V @ 250μA | 22A Tc | 110nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9183DT-30-T1-E3 | Vishay Siliconix | $0.87 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si9183dt285t1e3-datasheets-0827.pdf | 150mA | SOT-23-5 Thin, TSOT-23-5 | 3.05mm | 950μm | 1.65mm | 29.993795mg | 5 | 6V | 6V | Positive | 555mW | SI9183 | 555mW | TSOT-23-5 | 2V | 3V | 135mV | Fixed | 1 | Positive | 900μA | 1.5 % | Enable | 150mA | 3V | 300mA | 1 | Over Temperature, Short Circuit | 0.22V @ 150mA | 60dB ~ 30dB (1kHz ~ 100kHz) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR878ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sir878adpt1ge3-datasheets-0138.pdf | PowerPAK® SO-8 | Lead Free | 13 Weeks | 506.605978mg | Unknown | 14mOhm | 8 | Tin | No | 1 | Single | 5W | 1 | PowerPAK® SO-8 | 1.275nF | 12 ns | 13ns | 8 ns | 25 ns | 40A | 20V | 100V | 1.2V | 5W Ta 44.5W Tc | 14mOhm | 100V | N-Channel | 1275pF @ 50V | 14mOhm @ 15A, 10V | 2.8V @ 250μA | 40A Tc | 42nC @ 10V | 14 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP21106DVP-18-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | BICMOS | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sip21106dr33e3-datasheets-7391.pdf | PowerPAK® TSC-75-6 | 1.6mm | 600μm | 1.6mm | 6 | 6 | yes | EAR99 | No | TAPE AND REEL | 1 | 6V | e3 | Matte Tin (Sn) | 420mW | DUAL | 260 | 0.5mm | SIP21106-18 | 6 | 1 % | 40 | Other Regulators | 150mA | 2.2V | 1.8V | Fixed | 1 | Positive | 1.8V | 85μA | Enable | 0.3V | 4% | 170mA | 1 | Over Temperature, Short Circuit | 75dB ~ 40dB (1kHz ~ 100kHz) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1072X-T1-GE3 | Vishay Siliconix | $5.06 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1072xt1e3-datasheets-7794.pdf | SOT-563, SOT-666 | 6 | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 6 | Single | 40 | 1 | FET General Purpose Powers | 31ns | 31 ns | 9 ns | 1.3A | 20V | SILICON | SWITCHING | 30V | 30V | 236mW Ta | 0.093Ohm | N-Channel | 280pF @ 15V | 93m Ω @ 1.3A, 10V | 3V @ 250μA | 8.3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI91872DMP-25-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si91872dmp12e3-datasheets-0889.pdf | PowerPAK® MLP33-5 | 3.1mm | 1.15mm | 3.05mm | 5 | 6V | 6V | Positive | 2.3W | SI91872 | PowerPAK® MLP33-5 | 2V | 2.5V | 130mV | Fixed | 1 | Positive | 330μA | 170μA | Enable | 300mA | 2.5V | 500mA | 1 | Over Temperature, Reverse Polarity, Short Circuit | 0.57V @ 300mA | 60dB ~ 30dB (1kHz ~ 100kHz) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1051X-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1051xt1ge3-datasheets-0074.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | 32.006612mg | 6 | 1 | Single | SC-89-6 | 560pF | 7.2 ns | 36ns | 36 ns | 52 ns | 1.2A | 5V | 8V | 236mW Ta | 198mOhm | P-Channel | 560pF @ 4V | 122mOhm @ 1.2A, 4.5V | 1V @ 250μA | 9.45nC @ 5V | 122 mΩ | 1.5V 4.5V | ±5V |
