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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| DG306BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2014 | /files/vishaysiliconix-dg306bdj-datasheets-7728.pdf | 14-DIP (0.300, 7.62mm) | no | 14 | 2 | 50Ohm | 2:1 | DPST - NO | ±15V | 5nA | 14pF 14pF | 110ns, 70ns (Typ) | 30pC | -74dB @ 500kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3483CDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3483cdvt1ge3-datasheets-4261.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | No SVHC | 6 | yes | EAR99 | No | Pure Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 2W | 1 | Other Transistors | 10 ns | 15ns | 10 ns | 30 ns | -8A | 20V | SILICON | SWITCHING | 30V | 30V | -3V | 2W Ta 4.2W Tc | 8A | 0.034Ohm | P-Channel | 1000pF @ 15V | -3 V | 34m Ω @ 6.1A, 10V | 3V @ 250μA | 8A Tc | 33nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG308ADY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | 85°C | -40°C | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-dg309dy-datasheets-7535.pdf | 16-SOIC (0.154, 3.90mm Width) | 15V | 10μA | 10 Weeks | 36V | 13V | 100Ohm | No | 1nA | 600mW | 4 | 16-SOIC | 200 ns | 150 ns | 22V | 15V | Dual, Single | 7V | 100Ohm | 1:1 | SPST - NO | ±15V | 1nA | 11pF 8pF | 200ns, 150ns | -10pC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ443EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj443ept1ge3-datasheets-5887.pdf | PowerPAK® SO-8 | 12 Weeks | PowerPAK® SO-8 | 40V | 83W Tc | P-Channel | 2030pF @ 20V | 29mOhm @ 18A, 10V | 2.5V @ 250μA | 40A Tc | 57nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG403BDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg403bdy-datasheets-7786.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | 500μA | 16 | 665.986997mg | 36V | 13V | 45Ohm | 16 | no | unknown | 2 | e0 | TIN LEAD | 600mW | GULL WING | 240 | 15V | 16 | 2 | SPDT | 30 | 600mW | Multiplexer or Switches | Not Qualified | 150 ns | 100 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | 45Ohm | 72 dB | 3Ohm | BREAK-BEFORE-MAKE | 1:1 | SPST - NO/NC | ±15V | 500pA | 12pF 12pF | 150ns, 100ns | 60pC | -94.8dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7818DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si7818dnt1e3-datasheets-8452.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 135MOhm | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | FET General Purpose Power | Not Qualified | S-XDSO-C5 | 10 ns | 10ns | 10 ns | 25 ns | 3.4A | 20V | SILICON | DRAIN | SWITCHING | 1.5W Ta | 2.2A | 4 mJ | 150V | N-Channel | 4 V | 135m Ω @ 3.4A, 10V | 4V @ 250μA | 2.2A Ta | 30nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG408DY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2013 | /files/vishaysiliconix-dg409dj-datasheets-7506.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 36V | Contains Lead | 500μA | 16 | 6 Weeks | 547.485991mg | 44V | 13V | 100Ohm | 16 | no | No | 1 | 10μA | e0 | Tin/Lead (Sn/Pb) | 600mW | GULL WING | 16 | 8 | SINGLE-ENDED MULTIPLEXER | 600mW | Multiplexer or Switches | 1 | 150 ns | 150 ns | 20V | 15V | Dual, Single | 5V | 8 | 100Ohm | BREAK-BEFORE-MAKE | 12V ±5V~20V | 0.02A | 8:1 | 500pA | 3pF 26pF | 150ns, 150ns | 20pC | 15 Ω (Max) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9510PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irf9510pbf-datasheets-9175.pdf | -100V | -4A | TO-220-3 | 10.41mm | 19.89mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 1.2Ohm | 3 | No | 1 | Single | 43W | 1 | 175°C | TO-220AB | 200pF | 10 ns | 27ns | 17 ns | 15 ns | -4A | 20V | 100V | -2V | 43W Tc | 160 ns | 1.2Ohm | -100V | P-Channel | 200pF @ 25V | -4 V | 1.2Ohm @ 2.4A, 10V | 4V @ 250μA | 4A Tc | 8.7nC @ 10V | 1.2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG401BDY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2008 | /files/vishaysiliconix-dg403bdy-datasheets-7786.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | 500μA | 16 | 8 Weeks | 665.986997mg | 36V | 13V | 45Ohm | 16 | no | unknown | 2 | e0 | TIN LEAD | YES | 600mW | GULL WING | 240 | 15V | 16 | 1 | 30 | Multiplexer or Switches | 2 | Not Qualified | 150 ns | 100 ns | 22V | 15V | Dual, Single | 7V | -15V | SEPARATE OUTPUT | 45Ohm | 72 dB | 3Ohm | BREAK-BEFORE-MAKE | NO | 1:1 | SPST - NO | ±15V | 500pA | 12pF 12pF | 150ns, 100ns | 60pC | -94.8dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD220PBF | Vishay Siliconix | $2.78 |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd220pbf-datasheets-0078.pdf | 4-DIP (0.300, 7.62mm) | 8 Weeks | 4-DIP, Hexdip, HVMDIP | 200V | 1W Ta | N-Channel | 260pF @ 25V | 800mOhm @ 480mA, 10V | 4V @ 250μA | 800mA Ta | 14nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG412AK-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | ROHS3 Compliant | 2005 | /files/vishaysiliconix-dg413dj-datasheets-7502.pdf | 16-CDIP (0.300, 7.62mm) | 14 Weeks | 4 | 16-CERDIP | 35Ohm | 5V~44V ±5V~20V | 1:1 | SPST - NO | 250pA | 9pF 9pF | 175ns, 145ns | 5pC | -85dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7123DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7123dnt1ge3-datasheets-1880.pdf | PowerPAK® 1212-8 | 3.3mm | 1.04mm | 3.3mm | Lead Free | 5 | 12 Weeks | Unknown | 10.6mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | 40 | 1.5W | 1 | Other Transistors | S-XDSO-C5 | 25 ns | 88ns | 88 ns | 82 ns | -25A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | -1V | 1.5W Ta | 40A | -20V | P-Channel | 3729pF @ 10V | 10.6m Ω @ 15A, 4.5V | 1V @ 250μA | 10.2A Ta | 90nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG408AK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | 16-DIP (0.300, 7.62mm) | 19.56mm | 3.94mm | 7.62mm | 36V | 500μA | 16 | 44V | 13V | 100Ohm | 16 | no | No | 1 | e0 | Tin/Lead (Sn/Pb) | 900mW | 2.54mm | 16 | 8 | SINGLE-ENDED MULTIPLEXER | 900mW | Multiplexer or Switches | 1 | 150 ns | 150 ns | 20V | 15V | Dual, Single | 5V | 8 | 100Ohm | BREAK-BEFORE-MAKE | 12V ±5V~20V | 0.02A | 8:1 | 500pA | 3pF 26pF | 150ns, 150ns | 20pC | 15 Ω (Max) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIJ186DP-T1-GE3 | Vishay Siliconix | $1.13 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sij186dpt1ge3-datasheets-3238.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 60V | 5W Ta 57W Tc | N-Channel | 1710pF @ 30V | 4.5mOhm @ 15A, 10V | 3.6V @ 250μA | 23A Ta 79.4A Tc | 37nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG413LAK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | BICMOS | 5.08mm | Non-RoHS Compliant | 2016 | /files/vishay-dg413lak-datasheets-8733.pdf | 16-CDIP (0.300, 7.62mm) | 19.305mm | 16 | 12V | 2.7V | 17Ohm | 16 | no | No | 4 | NO | DUAL | 5V | 16 | 1 | Multiplexer or Switches | 3/12/+-5V | 4 | 280MHz | 6V | 3V | -5V | SEPARATE OUTPUT | 17Ohm | 68 dB | BREAK-BEFORE-MAKE | 35ns | 50ns | 2.7V~12V ±3V~6V | 1:1 | SPST - NO/NC | 250pA | 5pF 6pF | 19ns, 12ns | 5pC | -95dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7230DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7230dnt1e3-datasheets-3689.pdf | PowerPAK® 1212-8 | 3.3mm | 1.04mm | 3.3mm | Lead Free | 5 | 14 Weeks | 12mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Power | S-XDSO-C5 | 13 ns | 10ns | 10 ns | 33 ns | 9A | 20V | SILICON | DRAIN | SWITCHING | 1.5W Ta | 9A | 40A | 30V | N-Channel | 12m Ω @ 14A, 10V | 3V @ 250μA | 9A Ta | 20nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG412HSDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2013 | /files/vishaysiliconix-dg412hsdy-datasheets-7860.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 1μA | 16 | 8 Weeks | 1.627801g | 44V | 13V | 35Ohm | 16 | no | unknown | 4 | e0 | TIN LEAD | NO | 470mW | NOT SPECIFIED | 15V | 16 | 1 | NOT SPECIFIED | Multiplexer or Switches | 4 | Not Qualified | 105 ns | 105 ns | 22V | 15V | Dual, Single | 7V | -15V | SEPARATE OUTPUT | 35Ohm | 91 dB | BREAK-BEFORE-MAKE | 90ns | NO/NC | 12V ±5V~20V | 1:1 | SPST - NO | 250pA | 12pF 12pF | 105ns, 80ns | 22pC | -88dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR108DP-T1-RE3 | Vishay Siliconix | $1.05 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir108dpt1re3-datasheets-3997.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 100V | 5W Ta 65.7W Tc | N-Channel | 2060pF @ 50V | 13.5mOhm @ 10A, 10V | 3.6V @ 250μA | 12.4A Ta 45A Tc | 41.5nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2502DB-T2-GE1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2501dbt2ge1-datasheets-8223.pdf | 16-XFBGA, WLCSP | 30μA | 22 Weeks | 5.5V | 1.8V | 8Ohm | 16 | NOT SPECIFIED | NOT SPECIFIED | 4 | 550MHz | 100 ns | 60 ns | Single | 8Ohm | 1:1 | 1.8V~5.5V | SPST - NO | 400pA | 2.9pF 2.8pF | 100ns, 60ns | -2pC | -83dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD3N50D-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/vishaysiliconix-sihd3n50dge3-datasheets-4436.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | 2 | 11 Weeks | 1.437803g | Unknown | 3 | No | GULL WING | 1 | Single | 104W | 1 | FET General Purpose Powers | R-PSSO-G2 | 12 ns | 9ns | 13 ns | 11 ns | 3A | 30V | SILICON | DRAIN | SWITCHING | 3V | 69W Tc | TO-252AA | 3A | 5.5A | 9 mJ | 500V | N-Channel | 175pF @ 100V | 3.2 Ω @ 2.5A, 10V | 5V @ 250μA | 3A Tc | 12nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2750DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 2μA | 0.6mm | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg2750dn1t1ge4-datasheets-8523.pdf | 10-UFQFN | 1.8mm | Lead Free | 2μA | 10 | 10 Weeks | 5.5V | 1.8V | 1Ohm | 10 | yes | No | 2 | 2μA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 208mW | QUAD | 260 | 2.7V | 0.4mm | DG2750 | 10 | 1 | 40 | Multiplexer or Switches | 1.8/4V | 2 | 49MHz | 2.1 μs | 130 ns | Single | SEPARATE OUTPUT | 1Ohm | 55 dB | 0.1Ohm | BREAK-BEFORE-MAKE | 150ns | 1700ns | 2:1 | 1.8V~5V | SPDT | 50nA Typ | 36pF | 2.1μs, 130ns | 4pC | 100m Ω | -60dB @ 300kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD5N50D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sihd5n50dge3-datasheets-4739.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 13 Weeks | 3 | No | SINGLE | GULL WING | 1 | FET General Purpose Powers | R-PSSO-G2 | 12 ns | 11ns | 11 ns | 14 ns | 5.3A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 104W Tc | TO-252AA | 10A | N-Channel | 325pF @ 100V | 1.5 Ω @ 2.5A, 10V | 5V @ 250μA | 5.3A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG419DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1nA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg417dyt1e3-datasheets-1245.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 15V | Lead Free | 1μA | 8 | 14 Weeks | 540.001716mg | Unknown | 36V | 13V | 35Ohm | 8 | yes | No | 1 | 1nA | e3 | Matte Tin (Sn) | 400mW | GULL WING | 260 | 15V | DG419 | 8 | 1 | 30 | 400mW | Multiplexer or Switches | SPDT, SPST | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | -15V | 2 | 1 | 35Ohm | 40Ohm | BREAK-BEFORE-MAKE | 12V ±15V | 2:1 | SPDT | 250pA | 8pF 8pF | 175ns, 145ns | 60pC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIDR610DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sidr610dpt1ge3-datasheets-5162.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8DC | 200V | 6.25W Ta 125W Tc | N-Channel | 1380pF @ 100V | 31.9mOhm @ 10A, 10V | 4V @ 250μA | 8.9A Ta 39.6A Tc | 38nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG221BDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 800μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg221bdyt1e3-datasheets-0185.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 15V | 1.5mA | 16 | 12 Weeks | 1.627801g | 18V | 13V | 90Ohm | 16 | yes | EAR99 | No | 4 | e3 | Matte Tin (Sn) | 470mW | 15V | DG221 | 16 | 1 | 470mW | Multiplexer or Switches | SPST | 550 ns | 340 ns | 18V | 15V | Dual | 7V | -15V | 4 | SEPARATE OUTPUT | 90Ohm | 70 dB | BREAK-BEFORE-MAKE | NC | 1:1 | SPST - NC | ±15V | 5nA | 8pF 9pF | 550ns, 340ns | 20pC | -90dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHH11N65EF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sihh11n65eft1ge3-datasheets-5480.pdf | 8-PowerTDFN | 21 Weeks | 8 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 11A | 650V | 130W Tc | N-Channel | 1243pF @ 100V | 382m Ω @ 6A, 10V | 4V @ 250μA | 11A Tc | 70nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG419AK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2017 | 8-CDIP (0.300, 7.62mm) | 10.16mm | 3.94mm | 7.62mm | 1μA | 12 Weeks | 36V | 13V | 35Ohm | 8 | No | 600mW | 1 | 600mW | 1 | 8-CERDIP | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | 2 | 1 | 35Ohm | 35Ohm | 12V ±15V | 2:1 | SPDT | 250pA | 8pF 8pF | 175ns, 145ns | 60pC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA25N50E-E3 | Vishay Siliconix | $11.78 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha25n50ee3-datasheets-5891.pdf | TO-220-3 Full Pack | 18 Weeks | 6.000006g | 145mOhm | 1 | Single | TO-220 Full Pack | 1.98nF | 19 ns | 36ns | 29 ns | 57 ns | 26A | 20V | 500V | 35W Tc | 145mOhm | 500V | N-Channel | 1980pF @ 100V | 145mOhm @ 12A, 10V | 4V @ 250μA | 26A Tc | 86nC @ 10V | 145 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG419AK-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | ROHS3 Compliant | 2011 | 8-CDIP (0.300, 7.62mm) | 12 Weeks | 1 | 8-CERDIP | 35Ohm | 12V ±15V | 2:1 | SPDT | 250pA | 8pF 8pF | 175ns, 145ns | 60pC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF15N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihf15n65ege3-datasheets-6194.pdf | TO-220-3 Full Pack | Lead Free | 18 Weeks | yes | EAR99 | NOT SPECIFIED | Single | NOT SPECIFIED | 34W | 1 | 24ns | 25 ns | 48 ns | 15A | 4V | 650V | 34W Tc | N-Channel | 1640pF @ 100V | 280m Ω @ 8A, 10V | 4V @ 250μA | 15A Tc | 96nC @ 10V | 10V | ±30V |
