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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | On-State Resistance | Threshold Voltage | Power - Max | Power Dissipation-Max | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Feedback Cap-Max (Crss) | Switch-on Time-Max | Normal Position | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| SI4230DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4230dyt1ge3-datasheets-2231.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 186.993455mg | 8 | No | 3.2W | 2 | 2W | 2 | 8-SO | 950pF | 17 ns | 12ns | 10 ns | 18 ns | 7.3A | 20V | 30V | 3.2W | 20.5mOhm | 30V | 2 N-Channel (Dual) | 950pF @ 15V | 20.5mOhm @ 8A, 10V | 3V @ 250μA | 8A | 25nC @ 10V | Logic Level Gate | 20.5 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG408LEDQ-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg409ledyt1ge3-datasheets-1177.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5mm | 4.4mm | 16 | 20 Weeks | No SVHC | 23Ohm | 16 | 1 | e3 | PURE MATTE TIN | YES | DUAL | GULL WING | 260 | 5V | 0.65mm | 8 | SINGLE-ENDED MULTIPLEXER | 30 | 1 | -5V | 23Ohm | 80ns | 3V~16V ±3V~8V | 8:1 | 1nA | 5.5pF 25pF | 72ns, 47ns | 11pC | 1 Ω | -98dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4942DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4942dyt1ge3-datasheets-2263.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | No | PURE MATTE TIN (SN) | 1.1W | GULL WING | 260 | SI4942 | 8 | Dual | 30 | 1.1W | 2 | FET General Purpose Powers | 13 ns | 10ns | 11 ns | 31 ns | 5.3A | 20V | SILICON | SWITCHING | 40V | METAL-OXIDE SEMICONDUCTOR | 40V | 2 N-Channel (Dual) | 21m Ω @ 7.4A, 10V | 3V @ 250μA | 32nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2738DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | 0.6mm | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg2739dnt1e4-datasheets-5106.pdf | 8-UFQFN | 1.4mm | 1μA | 8 | 4.3V | 2.3V | 8Ohm | 8 | yes | unknown | 2 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 190mW | QUAD | NO LEAD | 260 | 3V | 0.4mm | DG2738 | 8 | 1 | 40 | Multiplexer or Switches | 3V | 2 | Not Qualified | 720MHz | SPST | 60 ns | 50 ns | Single | SEPARATE OUTPUT | 8Ohm | 28 dB | 0.1Ohm | BREAK-BEFORE-MAKE | 70ns | NC | 1:1 | 2.3V~4.3V | SPST - NC | 10nA | 4.4pF 3.8pF | 60ns, 50ns | 10.4pC | 100m Ω | -109dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4952DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4952dyt1ge3-datasheets-5615.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 186.993455mg | 8 | EAR99 | No | e3 | MATTE TIN | 2.8W | GULL WING | 260 | SI4952 | 8 | Dual | 40 | 1.8W | 2 | 15 ns | 50ns | 50 ns | 20 ns | 7A | 16V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 8A | 30A | 25V | 2 N-Channel (Dual) | 680pF @ 13V | 23m Ω @ 7A, 10V | 2.2V @ 250μA | 8A | 18nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG468DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 20μA | ROHS3 Compliant | 2017 | /files/vishaysiliconix-dg467dvt1e3-datasheets-9273.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1.1mm | 1.65mm | Lead Free | 15μA | 6 | 10 Weeks | 19.986414mg | No SVHC | 36V | 7V | 9Ohm | 6 | yes | No | 1 | 5μA | e3 | Matte Tin (Sn) | 570mW | GULL WING | 260 | 15V | 0.95mm | DG468 | 6 | 2 | 40 | 570mW | Multiplexer or Switches | 1 | SPST | 140 ns | 80 ns | 20V | Dual, Single | 4.5V | -15V | 7Ohm | 9Ohm | 7Ohm | 61 dB | BREAK-BEFORE-MAKE | NO | 7V~36V ±4.5V~20V | 1:1 | SPST - NO | 1nA | 30pF 15pF | 140ns, 80ns | 21pC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5915BDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5915bdct1e3-datasheets-2313.pdf | 8-SMD, Flat Lead | 3.1W | SI5915 | 1206-8 ChipFET™ | 420pF | 4A | 8V | 3.1W | 2 P-Channel (Dual) | 420pF @ 4V | 70mOhm @ 3.3A, 4.5V | 1V @ 250μA | 4A | 14nC @ 8V | Logic Level Gate | 70 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG3540DB-T1-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | 1nA | ROHS3 Compliant | 2008 | /files/vishaysiliconix-dg3540dbt1e1-datasheets-7855.pdf | 8-WFBGA | 1μA | 21 Weeks | 5.5V | 1.8V | 4Ohm | 8 | No | 1nA | 400mW | DG3540 | 2 | 8-MicroFoot™ (1.5x1.5) | 360MHz | SPST | 46 ns | 37 ns | Single | 3.5Ohm | 1:1 | 1.8V~5.5V | SPST - NO/NC | 2nA | 8pF | 41ns, 37ns | 1pC | 200mOhm (Max) | -66dB @ 10MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5933CDC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si5933cdct1ge3-datasheets-1970.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | 8 | 15 Weeks | 84.99187mg | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 2.8W | C BEND | 260 | SI5933 | 8 | 2 | Dual | 30 | 2 | Other Transistors | 1 ns | 34ns | 34 ns | 22 ns | -3.7A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 10A | 0.144Ohm | 2 P-Channel (Dual) | 276pF @ 10V | 144m Ω @ 2.5A, 4.5V | 1V @ 250μA | 3.7A | 6.8nC @ 5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2751DB-T2-GE1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/siliconlabs-ezr32lg230f128r60gc0-datasheets-5954.pdf | 22 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6973DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si6973dqt1ge3-datasheets-2343.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | No | 830mW | Dual | 830mW | 2 | 8-TSSOP | 27 ns | 27ns | 27 ns | 93 ns | -4.1A | 8V | 20V | 830mW | 30mOhm | 20V | 2 P-Channel (Dual) | 30mOhm @ 4.8A, 4.5V | 450mV @ 250μA (Min) | 4.1A | 30nC @ 4.5V | Logic Level Gate | 30 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG417BDQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg418bdqt1e3-datasheets-1717.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad | 3mm | 850μm | 3mm | 20V | Lead Free | 1μA | 8 | 12 Weeks | 139.989945mg | 36V | 13V | 35Ohm | 8 | yes | No | 4 | e3 | Matte Tin (Sn) | 400mW | GULL WING | 260 | 15V | 0.65mm | DG417 | 8 | 1 | 40 | 400mW | Multiplexer or Switches | SPST | 89 ns | 80 ns | 22V | 15V | Dual, Single | 7V | -15V | 1 | 25Ohm | 82 dB | BREAK-BEFORE-MAKE | NC | 12V ±15V | 1:1 | SPST - NC | 250pA | 12pF 12pF | 89ns, 80ns | 38pC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ941EP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sqj941ept1ge3-datasheets-2433.pdf | PowerPAK® SO-8 Dual | 4 | 506.605978mg | Unknown | 8 | yes | EAR99 | No | 55W | SINGLE | GULL WING | 260 | 8 | 2 | Dual | 40 | 55W | 2 | Other Transistors | R-PSSO-G4 | 49 ns | 35ns | 26 ns | 47 ns | 8A | 20V | SILICON | DRAIN | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | -2V | 8A | 2 P-Channel (Dual) | 1800pF @ 10V | -2 V | 24m Ω @ 9A, 10V | 2.5V @ 250μA | 55nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG401BDY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1mA | ROHS3 Compliant | 2008 | /files/vishaysiliconix-dg403bdye3-datasheets-4860.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | 500μA | 16 | 13 Weeks | 665.986997mg | 36V | 13V | 55Ohm | 16 | yes | No | 2 | e3 | Matte Tin (Sn) | 600mW | GULL WING | 260 | 15V | DG401 | 16 | 1 | 40 | 600mW | Multiplexer or Switches | SPST | 150 ns | 100 ns | 22V | 15V | Dual, Single | 7V | -15V | 2 | SEPARATE OUTPUT | 45Ohm | 72 dB | 3Ohm | BREAK-BEFORE-MAKE | NO | 1:1 | SPST - NO | ±15V | 500pA | 12pF 12pF | 150ns, 100ns | 60pC | -94.8dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ920DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-siz920dtt1ge3-datasheets-2719.pdf | 8-PowerWDFN | 6mm | 750μm | 5mm | 6 | Unknown | 8 | EAR99 | No | 100W | C BEND | SIZ920 | 2 | Dual | 1 | R-PDSO-C6 | 40A | 20V | SILICON | DRAIN SOURCE | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 1.2V | 39W 100W | 70A | 30V | 2 N-Channel (Half Bridge) | 1260pF @ 15V | 7.1m Ω @ 18.9A, 10V | 2.5V @ 250μA | 35nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2735ADN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | 0.6mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2735adnt1ge4-datasheets-5409.pdf | 10-UFQFN | 1.8mm | 1μA | 10 | 19 Weeks | 7.002332mg | 4.3V | 1.65V | 500mOhm | 10 | unknown | 2 | e4 | NICKEL PALLADIUM GOLD | 208mW | QUAD | NO LEAD | 3V | DG2735 | 10 | 1 | 208mW | 50MHz | 78 ns | 58 ns | Single | 4 | 2 | 500mOhm | 70 dB | 0.06Ohm | 60ns | 80ns | 2:1 | 1.65V~4.3V | SPDT | 2nA | 55pF | 78ns, 58ns | 60m Ω | -70dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2316BDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si2316bdst1ge3-datasheets-3870.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 50MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1 | FET General Purpose Powers | 20 ns | 65ns | 65 ns | 11 ns | 4.5A | 20V | SILICON | SWITCHING | 3V | 1.25W Ta 1.66W Tc | 30V | N-Channel | 350pF @ 15V | 50m Ω @ 3.9A, 10V | 3V @ 250μA | 4.5A Tc | 9.6nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG453EY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 5μA | ROHS3 Compliant | 2012 | /files/vishaysiliconix-dg452eqt1e3-datasheets-7713.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 500nA | 16 | 13 Weeks | 665.986997mg | No SVHC | 36V | 12V | 5.3Ohm | 16 | yes | ALSO OPERATES WITH 12V SINGLE SUPPLY AND +/-15V DUAL SUPPLY | No | 4 | e3 | MATTE TIN | 600mW | GULL WING | 260 | 5V | 1.27mm | DG453 | 16 | 1 | 40 | 600mW | Multiplexer or Switches | 4 | SPST | 118 ns | 97 ns | 22V | 15V | Dual, Single | 5V | -5V | 4 | SEPARATE OUTPUT | 5.3Ohm | 0.13Ohm | BREAK-BEFORE-MAKE | 113ns | 256ns | 1:1 | SPST - NO/NC | ±5V~15V | 500pA | 31pf 34pF | 118ns, 97ns | 22pC | 120m Ω | -85dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4128DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si4128dyt1ge3-datasheets-4479.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 24mOhm | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 5W | 1 | 15 ns | 12ns | 10 ns | 15 ns | 10.9A | 20V | SILICON | SWITCHING | 1V | 2.4W Ta 5W Tc | 30V | N-Channel | 435pF @ 15V | 24m Ω @ 7.8A, 10V | 2.5V @ 250μA | 10.9A Ta | 12nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG271BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 5.5mA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg271bdye3-datasheets-5527.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | 7.5mA | 16 | 13 Weeks | 665.986997mg | Unknown | 36V | 13V | 50Ohm | 16 | yes | 4 | e3 | Matte Tin (Sn) | 600mW | GULL WING | 260 | 15V | 1.27mm | DG271 | 16 | 1 | 30 | 600mW | Multiplexer or Switches | Not Qualified | SPST | 65 ns | 65 ns | 22V | 15V | Dual | 7V | -15V | 4 | 50Ohm | 50Ohm | 85 dB | BREAK-BEFORE-MAKE | NC | 1:1 | SPST - NC | ±15V | 1nA | 8pF 8pF | 65ns, 65ns | -5pC | -100dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4562DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4562dyt1ge3-datasheets-2293.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 186.993455mg | Unknown | 25mOhm | 8 | yes | EAR99 | No | e4 | Silver (Ag) | 2W | DUAL | GULL WING | 260 | SI4562 | 8 | 2 | 30 | 2W | 1 | Other Transistors | 27 ns | 32ns | 45 ns | 95 ns | 7.1A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 600mV | 40A | 20V | N and P-Channel | 600 mV | 25m Ω @ 7.1A, 4.5V | 1.6V @ 250μA | 50nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9251EN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 50μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg9253ent1e4-datasheets-6421.pdf | 16-WFQFN | 2.6mm | 16 | 12 Weeks | 16V | 2.7V | 482Ohm | yes | No | 1 | QUAD | 260 | 5V | 0.4mm | DG9251 | 16 | 8 | 40 | 1 | 314MHz | 5V | Multiplexer | Dual, Single | 2.7V | -5V | 182Ohm | 45 dB | 3.1Ohm | BREAK-BEFORE-MAKE | 369ns | 2.7V~16V ±2.7V~5V | 0.03A | 8:1 | 1nA | 2.7pF 10.7pF | 250ns, 125ns | 4.1pC | 3.1 Ω | -67dB @ 10MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VQ2001P-2 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-vq2001p-datasheets-6139.pdf | 14-DIP | 14 | 14 | no | EAR99 | No | e0 | TIN LEAD | 2W | DUAL | 2W | 4 | 600mA | 20V | SILICON | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 0.6A | 2A | 2Ohm | 60 pF | 4 P-Channel | 150pF @ 15V | 30ns | 30ns | 2 Ω @ 1A, 12V | 4.5V @ 1mA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG401DJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg405dy-datasheets-7457.pdf | 16-DIP (0.300, 7.62mm) | 16 | 8 Weeks | no | unknown | 2 | e0 | Tin/Lead (Sn/Pb) | NO | DUAL | 16 | Multiplexer or Switches | 5+-15V | 2 | Not Qualified | R-PDIP-T16 | SEPARATE OUTPUT | 45Ohm | 35Ohm | BREAK-BEFORE-MAKE | 150ns | NO | 1:1 | SPST - NO | ±15V | 500pA | 12pF 12pF | 150ns, 100ns | 60pC | -94.8dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1467DH-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1467dht1e3-datasheets-7400.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | Lead Free | 6 | 14 Weeks | 7.512624mg | 90mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1.5W | 1 | Other Transistors | 16 ns | 43ns | 43 ns | 36 ns | 2.7A | 8V | SILICON | 20V | 1.5W Ta 2.78W Tc | 3A | -20V | P-Channel | 561pF @ 10V | 90m Ω @ 2A, 4.5V | 1V @ 250μA | 2.7A Tc | 13.5nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG441DJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 30mA | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg442dyt1-datasheets-7418.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 100μA | 16 | 6 Weeks | 1.627801g | 36V | 13V | 85Ohm | 16 | no | unknown | 4 | e0 | Tin/Lead (Sn/Pb) | 450mW | 15V | 16 | 450mW | Multiplexer or Switches | Not Qualified | 250 ns | 120 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 85Ohm | BREAK-BEFORE-MAKE | NC | 12V ±15V | 1:1 | SPST - NC | 500pA | 4pF 4pF | 220ns, 120ns | -1pC | 4 Ω (Max) | -100dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR800ADP-T1-RE3 | Vishay Siliconix | $0.73 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir800adpt1re3-datasheets-8055.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 20V | 5W Ta 62.5W Tc | N-Channel | 3415pF @ 10V | 1.35mOhm @ 10A, 10V | 1.5V @ 250μA | 50.2A Ta 177A Tc | 53nC @ 10V | 2.5V 10V | +12V, -8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG181AP/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg180aa-datasheets-7546.pdf | 14-DIP (0.300, 7.62mm) | 30Ohm | 14 | Yes | 2 | 825mW | 2 | 14-DIP | 18V | 10V | 2 | 2 | 30Ohm | 1:1 | SPST - NC | ±15V | 1nA | 9pF 6pF | 150ns, 130ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3410DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si3410dvt1ge3-datasheets-9140.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 2W | 1 | FET General Purpose Power | 21 ns | 14ns | 9 ns | 20 ns | 8A | 20V | SILICON | SWITCHING | 30V | 30V | 3V | 2W Ta 4.1W Tc | 8A | 30A | N-Channel | 1295pF @ 15V | 3 V | 19.5m Ω @ 5A, 10V | 3V @ 250μA | 8A Tc | 33nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG190AP | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg190ap883-datasheets-7597.pdf | 16-DIP (0.300, 7.62mm) | 15V | Lead Free | 1.5mA | 30Ohm | 16 | 600μA | 900mW | 2 | 900mW | 2 | 16-DIP | 180 ns | 150 ns | 18V | 15V | Dual | 10V | 4 | 4 | 30Ohm | 30Ohm | 2:1 | SPDT | ±15V | 1nA | 9pF 6pF | 150ns, 130ns |
