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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Lead Pitch | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Polarity | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | High Level Output Current | Threshold Voltage | Power - Max | Power Dissipation-Max | Recovery Time | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Feedback Cap-Max (Crss) | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| VQ1001P-2 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-vq1001p2-datasheets-6118.pdf | PDIP | 14 | 18 Weeks | 14 | EAR99 | 8541.29.00.75 | NO | 2W | DUAL | 4 | Not Qualified | 14-DIP | 830mA | SILICON | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | 0.83A | 3A | 1Ohm | 35 pF | 4 N-Channel | 110pF @ 15V | 30ns | 30ns | 1.75 Ω @ 200mA, 5V | 2.5V @ 1mA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG429DN | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Bulk | 1 (Unlimited) | 85°C | -40°C | 20μA | Non-RoHS Compliant | 2005 | /files/vishaysiliconix-dg428dje3-datasheets-5967.pdf | 20-LCC (J-Lead) | 9.04mm | 3.69mm | 9.04mm | 100μA | 8 Weeks | 722.005655mg | 36V | 13V | 150Ohm | 20 | No | 800mW | DG429 | 2 | 800mW | 2 | 20-PLCC (9x9) | 300 ns | 300 ns | 22V | Multiplexer | 250 ns | Dual, Single | 7V | 2 | 8 | 100Ohm | 12V ±15V | 4:1 | SP4T | 500pA | 11pF 20pF | 150ns, 150ns | 1pC | 5Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4830CDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si4830cdyt1ge3-datasheets-1925.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 15 Weeks | 506.605978mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | 2.9W | DUAL | GULL WING | 260 | SI4830 | 8 | 2 | 30 | 2 | 17 ns | 12ns | 12 ns | 18 ns | 8A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 7.5A | 30V | 2 N-Channel (Half Bridge) | 950pF @ 15V | 20m Ω @ 8A, 10V | 3V @ 1mA | 25nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG418BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg418bdqt1e3-datasheets-1717.pdf | 8-DIP (0.300, 7.62mm) | 10.92mm | 3.81mm | 7.11mm | 20V | 1μA | 8 | 8 Weeks | 930.006106mg | 36V | 13V | 25Ohm | 8 | no | No | 4 | e0 | TIN LEAD | 400mW | 15V | 2.54mm | DG418 | 8 | 1 | 400mW | Multiplexer or Switches | 89 ns | 80 ns | 22V | 15V | Dual, Single | 7V | -15V | 1 | 25Ohm | 82 dB | BREAK-BEFORE-MAKE | 99ns | NC | 12V ±15V | 1:1 | SPST - NO | 250pA | 12pF 12pF | 89ns, 80ns | 38pC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIAA00DJ-T1-GE3 | Vishay Siliconix | $0.39 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siaa40djt1ge3-datasheets-7512.pdf | PowerPAK® SC-70-6 | 14 Weeks | PowerPAK® SC-70-6 Single | 25V | 3.5W Ta 19.2W Tc | N-Channel | 1090pF @ 12.5V | 5.6mOhm @ 15A, 10V | 2.5V @ 250μA | 20.1A Ta 40A Tc | 24nC @ 10V | 4.5V 10V | +16V, -12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG1412EN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 0.95mm | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg1413ent1ge4-datasheets-3369.pdf | 16-VQFN Exposed Pad | Lead Free | 1μA | 16 | 57.09594mg | Unknown | 24V | 4.5V | 1.8Ohm | 16 | No | 4 | YES | QUAD | 5V | 0.65mm | DG1412 | 1 | 4 | 210MHz | 150 ns | 120 ns | 15V | Dual, Single | 4.5V | -5V | 1.8Ohm | 80 dB | 0.08Ohm | 380ns | 510ns | 4.5V~24V ±4.5V~15V | 1:1 | SPST - NO | 550pA | 11pF 24pF | 150ns, 120ns | -20pC | 80m Ω | -100dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS128LDN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis128ldnt1ge3-datasheets-8251.pdf | PowerPAK® 1212-8 | 14 Weeks | PowerPAK® 1212-8 | 80V | 3.6W Ta 39W Tc | N-Channel | 1250pF @ 40V | 15.6mOhm @ 10A, 10V | 2.5V @ 250μA | 10.2A Ta 33.7A Tc | 30nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG183BP | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -25°C~85°C TA | Tube | 1 (Unlimited) | 85°C | -25°C | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg183bp-datasheets-7574.pdf | 16-DIP (0.300, 7.62mm) | 15Ohm | 16 | Yes | 2 | 16-DIP | 18V | 10V | 15Ohm | 2:1 | DPST - NO | ±15V | 15nA | 21pF 17pF | 600ns, 220ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS407ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sis407adnt1ge3-datasheets-9675.pdf | PowerPAK® 1212-8 | 1.12mm | Lead Free | 5 | 14 Weeks | No SVHC | 8 | EAR99 | Tin | e3 | DUAL | FLAT | NOT SPECIFIED | 1 | NOT SPECIFIED | 3.7W | 1 | 150°C | R-PDSO-F5 | 12 ns | 4ns | 36 ns | 120 ns | -16.7A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | -1V | 3.7W Ta 39.1W Tc | 0.009Ohm | -20V | P-Channel | 5875pF @ 10V | 9m Ω @ 15A, 4.5V | 1V @ 250μA | 18A Tc | 168nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG200AAA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-dg200aaa883-datasheets-7600.pdf | TO-100-10 Metal Can | 9.4mm | 4.7mm | 9.4mm | 15V | 2mA | 36V | 13V | 70Ohm | 10 | No | 450mW | 2 | 450mW | 2 | TO-100-10 | 1 μs | 425 ns | 22V | 15V | Dual | 7V | 2 | 2 | 70Ohm | 1:1 | SPST - NC | ±15V | 2nA | 9pF 9pF | 440ns, 340ns | -10pC | -90dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJQ480E-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqjq480et1ge3-datasheets-1251.pdf | 8-PowerTDFN | 4 | 14 Weeks | unknown | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | 260 | NOT SPECIFIED | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 80V | 80V | 136W Tc | 150A | 210A | 0.003Ohm | 140 mJ | N-Channel | 8625pF @ 25V | 3m Ω @ 20A, 10V | 3.5V @ 250μA | 150A Tc | 144nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG201BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2000 | /files/vishaysiliconix-dg201bdy-datasheets-7652.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 50μA | 16 | 6 Weeks | 1.627801g | No SVHC | 25V | 4.5V | 85Ohm | 16 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | 470mW | 15V | 16 | 470mW | Multiplexer or Switches | +-15V | 300 ns | 200 ns | 22V | Dual, Single | 4.5V | -15V | 4 | SEPARATE OUTPUT | 85Ohm | 85Ohm | BREAK-BEFORE-MAKE | NC | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9220PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9220pbf-datasheets-1966.pdf | -200V | -3.6A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 1.5Ohm | 3 | No | 14A | 200V | 1 | Single | 42W | 1 | D-Pak | 340pF | 8.8 ns | 27ns | 19 ns | 7.3 ns | -3.6A | 20V | 200V | -4V | 2.5W Ta 42W Tc | 300 ns | 1.5Ohm | -200V | P-Channel | 340pF @ 25V | -4 V | 1.5Ohm @ 2.2A, 10V | 4V @ 250μA | 3.6A Tc | 20nC @ 10V | 1.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2711DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2711dlt1ge3-datasheets-7686.pdf | 6-TSSOP, SC-88, SOT-363 | 1 | SC-70-6 | 600mOhm | 2:1 | 1.6V~3.6V | SPDT | 1nA | 70pF | 46ns, 38ns | 28pC | 70mOhm (Max) | -56dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ34PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfz34pbf-datasheets-3177.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 50mOhm | 3 | No | 1 | Single | 88W | 1 | TO-220AB | 1.2nF | 13 ns | 100ns | 52 ns | 29 ns | 30A | 20V | 60V | 4V | 88W Tc | 50mOhm | N-Channel | 1200pF @ 25V | 4 V | 50mOhm @ 18A, 10V | 4V @ 250μA | 30A Tc | 46nC @ 10V | 50 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG201HSDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Bulk | 1 (Unlimited) | CMOS | 4.5mA | Non-RoHS Compliant | 2008 | /files/vishaysiliconix-dg201hsdyt1-datasheets-7679.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 16.5V | Contains Lead | 10mA | 16 | 8 Weeks | 547.485991mg | 25V | 13V | 50Ohm | 16 | no | No | 4 | 4.5mA | e0 | Tin/Lead (Sn/Pb) | Inverting | 600mW | GULL WING | 15V | 1.27mm | 16 | 600mW | Multiplexer or Switches | SPST | 60 ns | 50 ns | 22V | 15V | Dual, Single | 7V | -15V | 30mA | 4 | 50Ohm | BREAK-BEFORE-MAKE | NC | 10.8V~16.5V ±15V | 1:1 | SPST - NC | 1nA | 5pF | 60ns, 50ns | -5pC | 1.5 Ω | -100dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPE50PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfpe50pbf-datasheets-4213.pdf | 800V | 7.8A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 1.2Ohm | 3 | 5.45mm | No | 1 | Single | 190W | 1 | TO-247-3 | 3.1nF | 19 ns | 38ns | 39 ns | 120 ns | 7.8A | 20V | 800V | 800V | 4V | 190W Tc | 980 ns | 1.2Ohm | 800V | N-Channel | 3100pF @ 25V | 4 V | 1.2Ohm @ 4.7A, 10V | 4V @ 250μA | 7.8A Tc | 200nC @ 10V | 1.2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG308BDQ-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg309bdqt1-datasheets-7732.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | 1μA | 16 | 10 Weeks | 172.98879mg | 44V | 4V | 85Ohm | 16 | no | unknown | 4 | e0 | TIN LEAD | YES | 640mW | GULL WING | 240 | 15V | 0.65mm | 16 | 1 | 30 | Multiplexer or Switches | +-15/12V | 4 | Not Qualified | 200 ns | 150 ns | 22V | Dual, Single | 4V | -15V | SEPARATE OUTPUT | 85Ohm | 85Ohm | 90 dB | 1.7Ohm | BREAK-BEFORE-MAKE | NO | 4V~44V ±4V~22V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 200ns, 150ns | 1pC | 1.7 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9220TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irfr9220pbf-datasheets-1966.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 1.5Ohm | 3 | Tin | No | 1 | Single | 2.5W | 1 | D-Pak | 340pF | 8.8 ns | 27ns | 19 ns | 7.3 ns | 3.6A | 20V | 200V | -2V | 2.5W Ta 42W Tc | 1.5Ohm | -200V | P-Channel | 340pF @ 25V | -2 V | 1.5Ohm @ 2.2A, 10V | 4V @ 250μA | 3.6A Tc | 20nC @ 10V | 1.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG333ADW | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 30μA | Non-RoHS Compliant | 2014 | /files/vishaysiliconix-dg333adwe3-datasheets-5131.pdf | 20-SOIC (0.295, 7.50mm Width) | 12.8mm | 2.34mm | 7.49mm | 200μA | 20 | 8 Weeks | 800.987426mg | Unknown | 40V | 5V | 45Ohm | 20 | no | No | 4 | 30μA | e0 | Tin/Lead (Sn/Pb) | 800mW | GULL WING | 20 | 4 | 800mW | Multiplexer or Switches | 1 | 175 ns | 145 ns | 22V | Dual, Single | 4V | 8 | 45Ohm | 45Ohm | BREAK-BEFORE-MAKE | 5V~40V ±4V~22V | 2:1 | SPDT | 250pA | 8pF | 175ns, 145ns | 10pC | 2 Ω (Max) | -80dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7101DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7101dnt1ge3-datasheets-6261.pdf | PowerPAK® 1212-8 | 1.12mm | Lead Free | 5 | 14 Weeks | No SVHC | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 1 | 30 | 3.7W | 1 | 150°C | S-PDSO-C5 | 12 ns | 10ns | 8 ns | 38 ns | -16.9A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | -1.2V | 3.7W Ta 52W Tc | 35A | 0.0072Ohm | 20 mJ | -30V | P-Channel | 3595pF @ 15V | 7.2m Ω @ 15A, 10V | 2.5V @ 250μA | 35A Tc | 102nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG406BDN-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2012 | /files/vishaysiliconix-dg406bdnt1e3-datasheets-9186.pdf | 28-LCC (J-Lead) | 12.57mm | 3.69mm | 12.57mm | 500μA | 28 | 1.182714g | 36V | 7.5V | 60Ohm | 28 | unknown | 1 | YES | 450mW | QUAD | J BEND | 16 | DPDT | Multiplexer or Switches | 1 | Not Qualified | 125 ns | 94 ns | 20V | 163 ns | Dual, Single | 5V | 60Ohm | BREAK-BEFORE-MAKE | 12V ±5V~20V | 0.03A | 16:1 | 500pA | 6pF 108pF | 107ns, 88ns | 11pC | 3 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR800DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-sir800dpt1ge3-datasheets-8428.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5.2W | 1 | FET General Purpose Power | R-XDSO-C5 | 27 ns | 15ns | 27 ns | 70 ns | 50A | 12V | SILICON | DRAIN | 600mV | 5.2W Ta 69W Tc | 35.4A | 0.0023Ohm | 45 mJ | 20V | N-Channel | 5125pF @ 10V | 600 mV | 2.3m Ω @ 15A, 10V | 1.5V @ 250μA | 50A Tc | 133nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2714DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2714dlt1ge3-datasheets-7828.pdf | 6-TSSOP, SC-88, SOT-363 | 1 | 1.2Ohm | 2:1 | 1.5V~3.6V | SPDT | 1nA | 30pF | 51ns, 33ns | 9pC | 60m Ω (Max) | -64dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR871DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir871dpt1ge3-datasheets-9512.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | EAR99 | unknown | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 89W Tc | 48A | 300A | 0.02Ohm | 61 mJ | P-Channel | 3395pF @ 50V | 20m Ω @ 20A, 10V | 2.6V @ 250μA | 48A Tc | 90nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG411HSAK-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | ROHS3 Compliant | 16-CDIP (0.300, 7.62mm) | 4 | 16-CERDIP | 35Ohm | 12V ±5V~20V | 1:1 | SPST - NC | 250pA | 12pF 12pF | 105ns, 80ns | 22pC | -88dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD90P04-9M4L_GE3 | Vishay Siliconix | $2.26 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd90p049m4lge3-datasheets-0446.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 40V | 136W Tc | P-Channel | 6675pF @ 20V | 9.4mOhm @ 17A, 10V | 2.5V @ 250μA | 90A Tc | 155nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG408LDY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BICMOS | Non-RoHS Compliant | 2012 | /files/vishaysiliconix-dg409ldqt1e3-datasheets-6643.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 500μA | 16 | 547.485991mg | 12V | 2.7V | 29Ohm | 16 | no | VIDEO APPLICATION | unknown | 1 | e0 | TIN LEAD | 600mW | GULL WING | 240 | 5V | 16 | 8 | SINGLE-ENDED MULTIPLEXER | 30 | 600mW | Multiplexer or Switches | 1 | Not Qualified | 150 ns | 150 ns | 6V | Dual, Single | 3V | -5V | 29Ohm | 70 dB | BREAK-BEFORE-MAKE | 45ns | 60ns | 2.7V~12V ±3V~6V | 0.03A | 8:1 | 1nA | 7pF 20pF | 55ns, 25ns | 1pC | 1 Ω | -82dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5415AEDU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si5415aedut1ge3-datasheets-2559.pdf | PowerPAK® ChipFET™ Single | Lead Free | 8 | EAR99 | No | Pure Matte Tin (Sn) | 260 | 1 | Single | 30 | 3.1W | 12 ns | 45ns | 25 ns | 80 ns | 25A | 8V | 20V | 3.1W Ta 31W Tc | -20V | P-Channel | 4300pF @ 10V | 9.6m Ω @ 10A, 4.5V | 1V @ 250μA | 25A Tc | 120nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG413LDQ-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BICMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg412hsdy-datasheets-7860.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | 1μA | 16 | 172.98879mg | 12V | 2.7V | 17Ohm | 16 | no | No | 4 | e0 | TIN LEAD | 450mW | GULL WING | 240 | 5V | 0.65mm | 16 | 1 | 30 | 450mW | Multiplexer or Switches | 3/12/+-5V | 280MHz | 50 ns | 35 ns | 6V | Dual, Single | 3V | -5V | 4 | SEPARATE OUTPUT | 17Ohm | 68 dB | BREAK-BEFORE-MAKE | 60ns | 2.7V~12V ±3V~6V | 1:1 | SPST - NO/NC | 250pA | 5pF 6pF | 19ns, 12ns | 5pC | -95dB @ 1MHz |
