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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Operating Supply Current | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Feature | Terminal Finish | Applications | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Power Dissipation-Max | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | On-state Resistance Match-Nom | Switching | Feedback Cap-Max (Crss) | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| DG538ADN-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 600μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg534adne3-datasheets-2500.pdf | 28-LCC (J-Lead) | 12.57mm | 3.69mm | 12.57mm | 15V | 500MHz | 2mA | 28 | 1.182714g | 18V | 10V | 90Ohm | 28 | yes | SELECTABLE DUAL 4-CHANNEL | unknown | 1 | e3 | T-Switch Configuration | Matte Tin (Sn) | Ultrasound, Video | 450mW | QUAD | J BEND | 260 | 15V | DG538 | 28 | 2 | 40 | 450mW | 515-3V | Not Qualified | 300 ns | 175 ns | 15V | 12V | Multiplexer | 300 ns | Dual, Single | 10V | -3V | 8 | 90Ohm | 90Ohm | 9Ohm | BREAK-BEFORE-MAKE | 500ns | 4:1 | 10V~21V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4892DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-si4892dyt1e3-datasheets-6394.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.5494mm | 3.9878mm | Lead Free | 12mOhm | 8 | No | Single | 1.6W | 1 | 8-SO | 10 ns | 11ns | 11 ns | 24 ns | 8.8A | 20V | 30V | 1.6W Ta | 12mOhm | 30V | N-Channel | 12mOhm @ 12.4A, 10V | 800mV @ 250μA (Min) | 8.8A Ta | 10.5nC @ 5V | 12 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG541AP | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 500MHz | 3.5mA | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg541dyt1e3-datasheets-2568.pdf | 16-DIP (0.300, 7.62mm) | 16 | 18V | 10V | 60Ohm | 16 | no | unknown | 4 | 3.5mA | e0 | RGB, T-Switch Configuration | Tin/Lead (Sn/Pb) | Video | 900mW | 16 | 4 | 15-3V | Not Qualified | 70 ns | 50 ns | 15V | Multiplexer | Dual, Single | 10V | SEPARATE OUTPUT | 60Ohm | 60Ohm | BREAK-BEFORE-MAKE | NO | 3V~15V ±3V~15V | 1:1 | SPST | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4453DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4453dyt1ge3-datasheets-6438.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 186.993455mg | 8 | 1 | Single | 8-SO | 110 ns | 235ns | 285 ns | 410 ns | 10A | 8V | 12V | 1.5W Ta | 6.5mOhm | -12V | P-Channel | 6.5mOhm @ 14A, 4.5V | 900mV @ 600μA | 10A Ta | 165nC @ 5V | 6.5 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7218DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7218dnt1e3-datasheets-0762.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 25mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 23W | C BEND | 260 | SI7218 | 8 | 2 | Dual | 30 | 23W | 2 | FET General Purpose Powers | S-XDSO-C6 | 15 ns | 12ns | 10 ns | 10 ns | 8A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 8A | 35A | 5 mJ | 30V | 2 N-Channel (Dual) | 700pF @ 15V | 25m Ω @ 8A, 10V | 3V @ 250μA | 24A | 17nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5441DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5441dct1e3-datasheets-6398.pdf | 8-SMD, Flat Lead | 8 | No | Single | 1.3W | 1206-8 ChipFET™ | 20 ns | 35ns | 45 ns | 65 ns | 3.9A | 12V | 20V | 1.3W Ta | 55mOhm | 20V | P-Channel | 55mOhm @ 3.9A, 4.5V | 1.4V @ 250μA | 3.9A Ta | 22nC @ 4.5V | 55 mΩ | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ500AEP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj500aept1ge3-datasheets-1233.pdf | PowerPAK® SO-8 Dual | 12 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 40V | 48W | N and P-Channel | 1850pF @ 20V | 27m Ω @ 6A, 10V | 2.3V @ 250μA | 30A Tc | 38.1nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4688DY-T1-E3 | Vishay Siliconix | $0.15 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4688dyt1ge3-datasheets-0576.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 186.993455mg | 8 | 1 | Single | 8-SO | 1.58nF | 13 ns | 10ns | 10 ns | 33 ns | 8.9A | 20V | 30V | 1.4W Ta | 11mOhm | N-Channel | 1580pF @ 15V | 11mOhm @ 12A, 10V | 3V @ 250μA | 8.9A Ta | 38nC @ 10V | 11 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7220DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7220dnt1ge3-datasheets-1978.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | 6 | 14 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.3W | C BEND | 260 | SI7220 | 8 | Dual | 40 | 1.3W | 2 | FET General Purpose Powers | S-XDSO-C6 | 10 ns | 10ns | 10 ns | 20 ns | 3.4A | 20V | SILICON | DRAIN | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 0.06Ohm | 6.1 mJ | 60V | 2 N-Channel (Dual) | 60m Ω @ 4.8A, 10V | 3V @ 250μA | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4890DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4890dyt1e3-datasheets-9379.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 186.993455mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Power | 13 ns | 8.5ns | 17 ns | 35 ns | 11A | 25V | SILICON | SWITCHING | 10V | 2.5W Ta | 50A | 30V | N-Channel | 12m Ω @ 11A, 10V | 800mV @ 250μA (Min) | 20nC @ 5V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1016CX-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1016cxt1ge3-datasheets-3861.pdf | SOT-563, SOT-666 | Lead Free | 6 | 14 Weeks | 8.193012mg | No SVHC | 6 | EAR99 | No | e3 | MATTE TIN | 220mW | DUAL | FLAT | 260 | 6 | 30 | 220mW | 2 | Other Transistors | 11 ns | 16ns | 11 ns | 26 ns | 600mA | 8V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 400mV | 20V | N and P-Channel | 43pF @ 10V | 396m Ω @ 500mA, 4.5V | 1V @ 250μA | 2nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7380ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7380adpt1e3-datasheets-6567.pdf | PowerPAK® SO-8 | 8 | 506.605978mg | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1 | FET General Purpose Powers | R-XDSO-C8 | 17 ns | 13ns | 35 ns | 155 ns | 40A | 12V | SILICON | DRAIN | SWITCHING | 30V | 30V | 5.4W Ta 83W Tc | 70A | 0.0035Ohm | N-Channel | 7785pF @ 15V | 3m Ω @ 20A, 10V | 1.6V @ 250μA | 40A Tc | 185nC @ 10V | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4931DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4931dyt1e3-datasheets-5063.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.1W | GULL WING | 260 | SI4931 | 8 | Dual | 30 | 1.1W | 2 | Other Transistors | 25 ns | 46ns | 155 ns | 230 ns | 6.7A | 8V | SILICON | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | -12V | 2 P-Channel (Dual) | 18m Ω @ 8.9A, 4.5V | 1V @ 350μA | 52nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7495DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7495dpt1e3-datasheets-6648.pdf | PowerPAK® SO-8 | 8 | Single | 1.8W | PowerPAK® SO-8 | 200ns | 200 ns | 350 ns | 13A | 8V | 12V | 1.8W Ta | 6.5mOhm | 12V | P-Channel | 6.5mOhm @ 21A, 4.5V | 900mV @ 1mA | 13A Ta | 140nC @ 5V | 6.5 mΩ | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA923EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sia923edjt1ge3-datasheets-5895.pdf | PowerPAK® SC-70-6 Dual | Lead Free | 6 | 14 Weeks | 28.009329mg | Unknown | 54mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 7.8W | 260 | SIA923 | 6 | 2 | Dual | 40 | 1.9W | 2 | Other Transistors | 15 ns | 16ns | 10 ns | 30 ns | 4.5A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -20V | 2 P-Channel (Dual) | -500 mV | 54m Ω @ 3.8A, 4.5V | 1.4V @ 250μA | 25nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7674DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7674dpt1ge3-datasheets-6654.pdf | PowerPAK® SO-8 | Single | 5.4W | PowerPAK® SO-8 | 5.91nF | 210ns | 9 ns | 26 ns | 40A | 20V | 30V | 5.4W Ta 83W Tc | 3.3mOhm | 30V | N-Channel | 5910pF @ 15V | 3.3mOhm @ 20A, 10V | 3V @ 250μA | 40A Tc | 90nC @ 10V | 3.3 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4532AEY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/vishaysiliconix-sq4532aeyt1ge3-datasheets-7201.pdf | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | 8 | 12 Weeks | EAR99 | unknown | YES | DUAL | GULL WING | NOT SPECIFIED | 2 | NOT SPECIFIED | 3.3W | 2 | 175°C | R-PDSO-G8 | 20V | SILICON | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 7.3A | 0.031Ohm | 53 pF | N and P-Channel | 535pF @ 15V 528pF @ 15V | 31m Ω @ 4.9A, 10V, 70m Ω @ 3.5A, 10V | 2.5V @ 250μA | 7.3A Tc 5.3A Tc | 7.8nC @ 10V, 10.2nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1056X-T1-GE3 | Vishay Siliconix | $3.60 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1056xt1e3-datasheets-7776.pdf | SOT-563, SOT-666 | 6 | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 6 | Single | 40 | 1 | FET General Purpose Power | 6.8 ns | 19ns | 19 ns | 18 ns | 1.32A | 8V | SILICON | SWITCHING | 236mW Ta | 0.089Ohm | 20V | N-Channel | 400pF @ 10V | 950 mV | 89m Ω @ 1.32A, 4.5V | 950mV @ 250μA | 8.7nC @ 5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4904DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4904dyt1e3-datasheets-2203.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 14 Weeks | 186.993455mg | No SVHC | 8 | No | 2W | SI4904 | 2 | Dual | 2W | 2 | 8-SO | 2.39nF | 88 ns | 117ns | 19 ns | 62 ns | 8A | 16V | 40V | 2V | 3.25W | 16mOhm | 40V | 2 N-Channel (Dual) | 2390pF @ 20V | 16mOhm @ 5A, 10V | 2V @ 250μA | 8A | 85nC @ 10V | Standard | 16 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4102DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4102dyt1e3-datasheets-6209.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 15 Weeks | 186.993455mg | Unknown | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 4.8W | 1 | FET General Purpose Power | 10 ns | 10ns | 10 ns | 12 ns | 2.7A | 20V | SILICON | SWITCHING | 2V | 2.4W Ta 4.8W Tc | 0.0027A | 100V | N-Channel | 370pF @ 50V | 158m Ω @ 2.7A, 10V | 4V @ 250μA | 3.8A Tc | 11nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS903DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sis903dnt1ge3-datasheets-0127.pdf | PowerPAK® 1212-8 Dual | 14 Weeks | PowerPAK® 1212-8 Dual | 20V | 2.6W Ta 23W Tc | 2 P-Channel (Dual) | 2565pF @ 10V | 20.1mOhm @ 5A, 4.5V | 1V @ 250μA | 6A Tc | 42nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6443DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si6443dqt1e3-datasheets-7408.pdf | 8-TSSOP (0.173, 4.40mm Width) | 157.991892mg | 8 | 1 | Single | 1 | 8-TSSOP | 7.3A | 20V | 30V | 1.05W Ta | 12mOhm | -30V | P-Channel | 12mOhm @ 8.8A, 10V | 3V @ 250μA | 7.3A Ta | 60nC @ 5V | 12 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZF916DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sizf916dtt1ge3-datasheets-0522.pdf | 8-PowerWDFN | 14 Weeks | 8-PowerPair® (6x5) | 30V | 3.4W Ta 26.6W Tc 4W Ta 60W Tc | 2 N-Channel (Dual) | 1060pF @ 15V 4320pF @ 15V | 4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V | 2.4V @ 250μA, 2.2V @ 250μA | 23A Ta 40A Tc | 22nC @ 10V, 95nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIE832DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie832dft1e3-datasheets-6384.pdf | 10-PolarPAK® (S) | 4 | 12 Weeks | 10 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | 260 | 10 | 1 | Single | 30 | 1 | FET General Purpose Power | R-PDSO-N4 | 45 ns | 260ns | 55 ns | 35 ns | 23.6A | 20V | SILICON | DRAIN | SWITCHING | 5.2W Ta 104W Tc | 80A | 0.0055Ohm | 40V | N-Channel | 3800pF @ 20V | 5.5m Ω @ 14A, 10V | 3V @ 250μA | 50A Tc | 77nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1023X-T1-GE3 | Vishay Siliconix | $0.29 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishay-si1023xt1ge3-datasheets-0962.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 6 | 14 Weeks | 8.193012mg | Unknown | 1.2Ohm | 3 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 250mW | FLAT | 260 | SI1023 | 6 | Dual | 40 | 250mW | 2 | Other Transistors | R-PDSO-F6 | -350mA | 6V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -450mV | -20V | 2 P-Channel (Dual) | 1.2 Ω @ 350mA, 4.5V | 450mV @ 250μA (Min) | 370mA | 1.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR412DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sir412dpt1ge3-datasheets-2592.pdf | PowerPAK® SO-8 | 5 | 506.605978mg | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.9W | 1 | FET General Purpose Power | R-PDSO-C5 | 13 ns | 13ns | 10 ns | 13 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 3.9W Ta 15.6W Tc | 50A | 25V | N-Channel | 600pF @ 10V | 12m Ω @ 10A, 10V | 2.5V @ 250μA | 20A Tc | 16nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ322DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-siz322dtt1ge3-datasheets-4273.pdf | 8-PowerWDFN | 800μm | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | 2 | NOT SPECIFIED | 3.7W | 150°C | 10 ns | 15 ns | 19A | 16.7W Tc | 25V | 2 N-Channel (Dual) | 950pF @ 12.5V | 6.35m Ω @ 15A, 10V | 2.4V @ 250μA | 30A Tc | 20.1nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIE844DF-T1-E3 | Vishay Siliconix | $7.91 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie844dft1e3-datasheets-3152.pdf | 10-PolarPAK® (U) | 4 | No SVHC | 10 | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | PURE MATTE TIN | DUAL | 260 | 10 | Single | 30 | 5.2W | 1 | FET General Purpose Power | R-XDSO-N4 | 25 ns | 10ns | 10 ns | 25 ns | 44.5A | 20V | 30V | SILICON | DRAIN | SWITCHING | 3V | 5.2W Ta 25W Tc | 60A | 0.007Ohm | 31 mJ | 30V | N-Channel | 2150pF @ 15V | 3 V | 7m Ω @ 12.1A, 10V | 3V @ 250μA | 44.5A Tc | 44nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ340DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | PowerPAIR®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-siz340dtt1ge3-datasheets-5238.pdf | 8-PowerWDFN | 3mm | 750μm | 3mm | 8 | 14 Weeks | Unknown | 8 | EAR99 | No | 31W | 2 | Dual | 2 | 13 ns | 55ns | 7 ns | 16 ns | 40A | 20V | SILICON | DRAIN SOURCE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2.4V | 16.7W 31W | 100A | 0.0095Ohm | 5 mJ | 2 N-Channel (Half Bridge) | 760pF @ 15V | 9.5m Ω @ 15.6A, 10V | 2.4V @ 250μA | 30A 40A | 19nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIE804DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie804dft1ge3-datasheets-3195.pdf | 10-PolarPAK® (LH) | 10 | 5.2W | 1 | 10-PolarPAK® (LH) | 3nF | 37A | 20V | 150V | 5.2W Ta 125W Tc | 38mOhm | 150V | N-Channel | 3000pF @ 50V | 38mOhm @ 7.6A, 10V | 3V @ 250μA | 37A Tc | 105nC @ 10V | 38 mΩ | 6V 10V | ±20V |
