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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Operating Supply Current | Operating Mode | Input Type | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Interface | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Max Frequency | Current | Reach Compliance Code | Number of Functions | Voltage - Input (Max) | Max Input Voltage | Nominal Supply Current | JESD-609 Code | Feature | Terminal Finish | Voltage | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Max Output Current | Min Input Voltage | Output Voltage | Output Current | Output Type | Voltage - Load | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Function | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Threshold Voltage | Switch Type | Output Configuration | Fault Protection | Current - Output (Max) | Power - Max | Input Voltage-Nom | Power Dissipation-Max | Built-in Protections | Output Current Flow Direction | Topology | Synchronous Rectifier | Max Duty Cycle | Duty Cycle | Control Mode | Control Technique | Switcher Configuration | Voltage - Output (Max) | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Voltage - Input (Min) | Avalanche Energy Rating (Eas) | Control Features | Current - Output | Voltage - Output (Min/Fixed) | Drain to Source Breakdown Voltage | Voltage - Supply (Vcc/Vdd) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Typ) | Ratio - Input:Output | Frequency - Switching | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIR882DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sir882dpt1ge3-datasheets-1286.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | DUAL | C BEND | NOT SPECIFIED | 8 | 1 | Single | NOT SPECIFIED | 5.4W | 1 | FET General Purpose Power | Not Qualified | R-XDSO-C5 | 60A | 20V | SILICON | DRAIN | SWITCHING | 1.2V | 5.4W Ta 83W Tc | 45 mJ | 100V | N-Channel | 1930pF @ 50V | 1.2 V | 8.7m Ω @ 20A, 10V | 2.8V @ 250μA | 60A Tc | 58nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR814DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir814dpt1ge3-datasheets-9493.pdf | PowerPAK® SO-8 | 5 | Unknown | 8 | EAR99 | DUAL | C BEND | NOT SPECIFIED | 8 | NOT SPECIFIED | 6.25W | 1 | FET General Purpose Powers | Not Qualified | R-PDSO-C5 | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 1V | 6.25W Ta 104W Tc | 0.0029Ohm | N-Channel | 3800pF @ 20V | 2.1m Ω @ 20A, 10V | 2.3V @ 250μA | 60A Tc | 86nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2325DS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/vishaysiliconix-si2325dst1e3-datasheets-4364.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 1.2Ohm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | Other Transistors | 150°C | 7 ns | 16 ns | -690mA | 20V | SILICON | SWITCHING | 150V | -4.5V | 750mW Ta | -150V | P-Channel | 510pF @ 25V | 1.2 Ω @ 500mA, 10V | 4.5V @ 250μA | 530mA Ta | 12nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6660 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6660e3-datasheets-9278.pdf | TO-205AD, TO-39-3 Metal Can | Lead Free | 3Ohm | 3 | No | 11A | 60V | 1 | Single | 6.25W | 1 | TO-205AD (TO-39) | 50pF | 1.1A | 20V | 60V | 725mW Ta 6.25W Tc | 3Ohm | 60V | N-Channel | 50pF @ 25V | 3Ohm @ 1A, 10V | 2V @ 1mA | 990mA Tc | 3 Ω | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7431DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-si7431dpt1e3-datasheets-5285.pdf | PowerPAK® SO-8 | 4.9mm | 1.12mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 174mOhm | 8 | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 5.4W | 1 | Other Transistors | 150°C | R-XDSO-C5 | 23 ns | 49ns | 49 ns | 110 ns | -3.8A | 20V | SILICON | DRAIN | SWITCHING | 200V | -4V | 1.9W Ta | 2.2A | 30A | 45 mJ | -200V | P-Channel | -4 V | 174m Ω @ 3.8A, 10V | 4V @ 250μA | 2.2A Ta | 135nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ2319ES-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sq2319est1ge3-datasheets-6546.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | Unknown | 3 | yes | EAR99 | No | 3W | DUAL | GULL WING | 260 | SQ2319 | 3 | Single | 40 | 3W | 1 | Other Transistors | 7 ns | 15ns | 25 ns | 25 ns | -4.6A | 20V | SWITCHING | 40V | -2V | 0.082Ohm | -40V | P-Channel | 620pF @ 25V | 75m Ω @ 3A, 10V | 2.5V @ 250μA | 4.6A Tc | 16nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ402EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqj402ept1ge3-datasheets-7757.pdf | 8-PowerTDFN | 4.9mm | 1.07mm | 4.37mm | Lead Free | 4 | 12 Weeks | Unknown | 8 | EAR99 | No | GULL WING | 1 | Single | 1 | R-PSSO-G4 | 10 ns | 10ns | 7 ns | 27 ns | 32A | 20V | SILICON | DRAIN | 100V | 2V | 83W Tc | 75A | N-Channel | 2289pF @ 40V | 11m Ω @ 10A, 10V | 2.5V @ 250μA | 32A Tc | 51nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50N02-06P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sud50n0206pe3-datasheets-9904.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 15 Weeks | 1.437803g | 6mOhm | 3 | yes | EAR99 | Tin | No | e3 | GULL WING | 4 | 1 | Single | 6.8W | 1 | FET General Purpose Power | R-PSSO-G2 | 11 ns | 10ns | 9 ns | 24 ns | 26A | 20V | 20V | SILICON | DRAIN | SWITCHING | 6.8W Ta 65W Tc | 20V | N-Channel | 2550pF @ 10V | 3 V | 6m Ω @ 20A, 10V | 3V @ 250μA | 50A Tc | 30nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD50N10-8M9L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sqd50n108m9lge3-datasheets-8369.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.22mm | 2.38mm | 6.73mm | 12 Weeks | 1.437803g | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 12 ns | 12ns | 120 ns | 95 ns | 50A | 2V | 100V | 136W Tc | N-Channel | 2950pF @ 25V | 8.9m Ω @ 15A, 10V | 2.5V @ 250μA | 50A Tc | 70nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7102DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7102dnt1ge3-datasheets-0197.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 5 | No SVHC | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 52mW | 1 | FET General Purpose Powers | S-XDSO-C5 | 27 ns | 125ns | 12 ns | 53 ns | 25A | 8V | SILICON | DRAIN | SWITCHING | 12V | 1V | 3.8W Ta 52W Tc | 35A | 60A | N-Channel | 3720pF @ 6V | 3.8m Ω @ 15A, 4.5V | 1V @ 250μA | 35A Tc | 110nC @ 8V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR424DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir424dpt1ge3-datasheets-1847.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 7.4MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | 40 | 4.8W | 1 | FET General Purpose Powers | R-PDSO-C5 | 18 ns | 12ns | 10 ns | 23 ns | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5V | 4.8W Ta 41.7W Tc | 23.4A | 70A | 20V | N-Channel | 1250pF @ 10V | 5.5m Ω @ 20A, 10V | 2.5V @ 250μA | 30A Tc | 35nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQM120N04-1M4L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR466DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir466dpt1ge3-datasheets-3474.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 3.5mOhm | 8 | yes | EAR99 | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5W | 1 | FET General Purpose Power | Not Qualified | R-XDSO-C5 | 30 ns | 9ns | 9 ns | 35 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 2.4V | 5W Ta 54W Tc | 70A | 45 mJ | 30V | N-Channel | 2730pF @ 15V | 3.5m Ω @ 15A, 10V | 2.4V @ 250μA | 40A Tc | 65nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32101DB-T1-GE1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sip32101dbt1ge1-datasheets-4693.pdf | 12-UFBGA, CSPBGA | 22 Weeks | 5.5V | 2.3V | 13mOhm | 12 | On/Off | No | Slew Rate Controlled | 1.096W | 12-WCSP (1.71x1.31) | 5A | P-Channel | 2.3V~5.5V | 500 μs | 2.4 ms | 1 | General Purpose | High Side | 5A | Not Required | 6.5mOhm | 1:1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA461DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sia461djt1ge3-datasheets-5949.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 3 | 14 Weeks | Unknown | 6 | EAR99 | No | DUAL | 1 | Single | 3.4W | 1 | S-PDSO-N3 | 20 ns | 22ns | 20 ns | 50 ns | -12A | 8V | SILICON | DRAIN | SWITCHING | 20V | -400mV | 3.4W Ta 17.9W Tc | 20A | 0.033Ohm | -20V | P-Channel | 1300pF @ 10V | 33m Ω @ 5.2A, 4.5V | 1V @ 250μA | 12A Tc | 45nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32468DB-T2-GE1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-Inverting | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sip32468dbt2ge1-datasheets-2879.pdf | 4-UFBGA, WLCSP | 20 Weeks | 54mOhm | 4 | On/Off | unknown | Load Discharge, Slew Rate Controlled | 300mW | SPST | 1.2A | N-Channel | 1.2V~5.5V | 300 μs | 1 | General Purpose | High Side | Reverse Current | Not Required | 50m Ω | 1:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA483DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia483djt1ge3-datasheets-7304.pdf | PowerPAK® SC-70-6 | 2.05mm | 800μm | 2.05mm | 3 | 14 Weeks | 6 | yes | EAR99 | DUAL | NO LEAD | NOT SPECIFIED | 6 | 1 | Single | NOT SPECIFIED | 3.5W | 1 | Other Transistors | 150°C | S-XDSO-N3 | 10 ns | 60ns | 20 ns | 27 ns | -10A | 20V | SILICON | DRAIN | SWITCHING | 30V | 3.5W Ta 19W Tc | 40A | -30V | P-Channel | 1550pF @ 15V | 21m Ω @ 5A, 10V | 2.2V @ 250μA | 12A Tc | 45nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32461DB-T2-GE1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Digi-Reel® | 1 (Unlimited) | Non-Inverting | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sip32462dbt2ge1-datasheets-3105.pdf | 4-UFBGA, CSPBGA | 5.5V | Lead Free | 7μA | 16 Weeks | 150mOhm | 4 | On/Off | No | 5.5V | 4.5μA | Slew Rate Controlled | 300mW | SIP32461 | SPST | 1.2V | N-Channel | 1.2V~5.5V | 130 μs | 2 μs | 1 | General Purpose | High Side | Reverse Current | 1.2A | Not Required | 50m Ω | 1:1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ260DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-siz260dtt1ge3-datasheets-1885.pdf | 8-PowerWDFN | 8-PowerPair® (3.3x3.3) | 80V | 4.3W Ta 33W Tc | 2 N-Channel (Dual) | 820pF @ 40V | 24.5mOhm @ 10A, 10V, 24.7mOhm @ 10A, 10V | 2.4V @ 250μA | 8.9A Ta 24.7A Tc 8.9A Ta 24.6A Tc | 27nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3831DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -25°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si3831dvt1ge3-datasheets-0039.pdf | SOT-23-6 Thin, TSOT-23-6 | 5.5V | 180mOhm | 6 | On/Off | 1.5W | SI3831 | 1.5W | 6-TSOP | 2.4A | P-Channel | 2.5V~5.5V | 25 ns | 180 ns | 2.4A | 1 | General Purpose | High Side | 2.4A | 170mOhm | 130mOhm | 1:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8902AEDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2017 | /files/vishaysiliconix-si8902aedbt2e1-datasheets-2917.pdf | 6-UFBGA | 21 Weeks | 14mOhm | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 24V | 5.7W | 2 N-Channel (Dual) | 28m Ω @ 1A, 4.5V | 900mV @ 250μA | 11A | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4724CY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 1MHz | 500μA | Non-Inverting | 1.75mm | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4724cyt1e3-datasheets-0220.pdf | 16-SOIC (0.154, 3.90mm Width) | 9.9mm | 3.9mm | 16 | 5.5V | 4.5V | 16 | On/Off | yes | EAR99 | No | 1 | e3 | MATTE TIN | 1.2W | DUAL | GULL WING | 260 | 5V | SI4724 | 16 | 40 | 1.2W | 6.5A | N-Channel | 4.5V~5.5V | 56 ns | 2 | General Purpose | High Side or Low Side | UVLO | 5.1A 6.5A | TRANSIENT; UNDER VOLTAGE | SOURCE SINK | 24m Ω, 30m Ω | 1:2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1029X-T1-E3 | Vishay Siliconix | $3.72 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1029xt1ge3-datasheets-1515.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 32.006612mg | No SVHC | 4Ohm | 6 | 250mW | SI1029 | 2 | Single | 250mW | 2 | SC-89-6 | 30pF | 20 ns | 35 ns | 500mA | 20V | 60V | 60V | 2.5V | 250mW | 4Ohm | 60V | N and P-Channel | 30pF @ 25V | 2.5 V | 1.4Ohm @ 500mA, 10V | 2.5V @ 250μA | 305mA 190mA | 0.75nC @ 4.5V | Logic Level Gate | 3 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIC931BED-Y1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | microBUCK® | Surface Mount | -40°C~105°C TA | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sic931bedy1ge3-datasheets-3139.pdf | 60-PowerBFQFN | 19 Weeks | 18V | PowerPAK® MLP60-A6C | Adjustable | Step-Down | 1 | Positive | Buck | Yes | 5.5V | 4.5V | 20A | 0.6V | 600kHz 1MHz 1.5MHz 2MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3585DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si3585dvt1e3-datasheets-4406.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.1mm | 1mm | 1.7mm | Lead Free | 6 | Unknown | 200MOhm | 6 | yes | EAR99 | No | e3 | MATTE TIN | 830mW | GULL WING | 260 | SI3585 | 6 | Dual | 40 | 830mW | 2 | Other Transistors | 11 ns | 34ns | 34 ns | 19 ns | 19A | 12V | SILICON | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 600mV | 2A | 20V | N and P-Channel | 600 mV | 125m Ω @ 2.4A, 4.5V | 600mV @ 250μA (Min) | 2A 1.5A | 3.2nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIC469ED-T1-GE3 | Vishay Siliconix | $3.01 |
Min: 1 Mult: 1 |
download | microBUCK® | Surface Mount | -40°C~105°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sic469edt1ge3-datasheets-4516.pdf | PowerPAK® MLP55-27 | 16 Weeks | 60V | PowerPAK® MLP55-27 | Adjustable | Step-Down | 1 | Positive | Buck | Yes | 55.2V | 4.5V | 2A | 0.8V | 100kHz~2MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4910DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si4910dyt1e3-datasheets-4516.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 27mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2W | GULL WING | 260 | SI4910 | 8 | Dual | 40 | 2W | 2 | 6 ns | 60ns | 5 ns | 22 ns | 6A | 16V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 3.1W | 6A | 5 mJ | 40V | 2 N-Channel (Dual) | 855pF @ 20V | 27m Ω @ 6A, 10V | 2V @ 250μA | 7.6A | 32nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9105DN02-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BCDMOS | 4.57mm | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si9105dn02e3-datasheets-5187.pdf | 20-LCC (J-Lead) | 8.9662mm | 8.9662mm | 20 | 13.5V | 20 | yes | EAR99 | 120V | e3 | Matte Tin (Sn) | QUAD | J BEND | 250 | SI9105 | SWITCHING REGULATOR | 40 | Switching Regulator or Controllers | 4V | 80μA | Fixed | Step-Up/Step-Down | 1 | Positive or Negative, Isolation Capable | 10V | Flyback | No | 50 % | 50 % | CURRENT-MODE | SINGLE | 10V | 40kHz~1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5903DC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/vishaysiliconix-si5903dct1e3-datasheets-4618.pdf | 8-SMD, Flat Lead | 3.0988mm | 1.0922mm | 1.7018mm | Lead Free | 8 | No SVHC | 155mOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | 1.1W | C BEND | 260 | SI5903 | 8 | Dual | 40 | 1.1W | 2 | Other Transistors | 13 ns | 35ns | 25 ns | 25 ns | -2.9A | 12V | SILICON | 20V | METAL-OXIDE SEMICONDUCTOR | -600mV | -20V | 2 P-Channel (Dual) | 155m Ω @ 2.1A, 4.5V | 600mV @ 250μA (Min) | 2.1A | 6nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9118DY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Bulk | 1 (Unlimited) | BCDMOS | 3mA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si9118dyt1e3-datasheets-9814.pdf | 16-SOIC (0.154, 3.90mm Width) | 9.9mm | 3.9mm | 16.5V | 16 | 547.485991mg | 16 | yes | EAR99 | 1MHz | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | SI9118 | SWITCHING CONTROLLER | 40 | Switching Regulator or Controllers | 11.5V | 500mA | Transistor Driver | 40ns | 40 ns | Step-Up/Step-Down | 1 | Positive, Isolation Capable | 10V | Forward Converter | No | 80 % | CURRENT-MODE | PULSE WIDTH MODULATION | SINGLE | Current Limit, Enable, Frequency Control, Soft Start | 10V~16.5V | 40kHz~1MHz |
