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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | Input Type | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Interface | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Nominal Input Voltage | Current | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | Number of Functions | Voltage - Input (Max) | JESD-609 Code | Feature | Terminal Finish | Voltage | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Max Output Current | Output Voltage | Output Current | Output Type | Voltage - Load | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Function | DS Breakdown Voltage-Min | Number of Outputs | Threshold Voltage | Switch Type | Output Configuration | Fault Protection | Current - Output (Max) | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Output Peak Current Limit-Nom | Built-in Protections | Topology | Synchronous Rectifier | Voltage - Output (Max) | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Voltage - Input (Min) | Avalanche Energy Rating (Eas) | Current - Output | Voltage - Output (Min/Fixed) | Drain to Source Breakdown Voltage | Voltage - Supply (Vcc/Vdd) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Typ) | Ratio - Input:Output | Frequency - Switching | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIA433EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia433edjt1ge3-datasheets-8627.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | Lead Free | 3 | 14 Weeks | Unknown | 15mOhm | 6 | yes | EAR99 | No | DUAL | 260 | 6 | 1 | Single | 40 | 3.5W | 1 | Other Transistors | S-XDSO-N3 | 710 ns | 1.7μs | 3.2 μs | 6 μs | -12A | 12V | SILICON | DRAIN | SWITCHING | 20V | -500mV | 3.5W Ta 19W Tc | 50A | -20V | P-Channel | 18m Ω @ 7.6A, 4.5V | 1.2V @ 250μA | 12A Tc | 75nC @ 8V | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4412ADY-T1-E3 | Vishay Siliconix | $0.17 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4412adyt1ge3-datasheets-6274.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 24mOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.3W | 1 | 15 ns | 6ns | 6 ns | 26 ns | 5.8A | 20V | SILICON | 1.3W Ta | 30A | 30V | N-Channel | 24m Ω @ 8A, 10V | 1V @ 250μA (Min) | 5.8A Ta | 20nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7461DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si7461dpt1e3-datasheets-0011.pdf | PowerPAK® SO-8 | 4.9mm | 1.17mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 14.5mOhm | 8 | yes | EAR99 | Tin | No | S17-0173-Single | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | Other Transistors | 150°C | R-XDSO-C5 | 20 ns | 20ns | 20 ns | 205 ns | -12.6A | 20V | SILICON | DRAIN | SWITCHING | 60V | -3V | 1.9W Ta | 60A | -60V | P-Channel | -3 V | 14.5m Ω @ 14.4A, 10V | 3V @ 250μA | 8.6A Ta | 190nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6660-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-2n6660e3-datasheets-9278.pdf | TO-205AD, TO-39-3 Metal Can | 9.4mm | 6.6mm | 8.15mm | 3 | 9 Weeks | Unknown | 3 | yes | EAR99 | LOW THRESHOLD | Tin | No | e3 | BOTTOM | WIRE | 260 | 2 | 1 | Single | 40 | 725mW | 1 | FET General Purpose Powers | 1.1A | 20V | SILICON | AMPLIFIER | 1.7V | 725mW Ta 6.25W Tc | 0.99A | 3Ohm | 60V | N-Channel | 50pF @ 25V | 1.7 V | 3 Ω @ 1A, 10V | 2V @ 1mA | 990mA Tc | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7450DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7450dpt1e3-datasheets-1059.pdf | 20V | 5.3A | PowerPAK® SO-8 | 4.9mm | 1.12mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 80mOhm | 8 | yes | EAR99 | Tin | No | S17-0173_SINGLE | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | FET General Purpose Power | 150°C | R-XDSO-C5 | 14 ns | 20ns | 25 ns | 32 ns | 3.2A | 20V | SILICON | DRAIN | SWITCHING | 2V | 1.9W Ta | 40A | 200V | N-Channel | 2 V | 80m Ω @ 4A, 10V | 4.5V @ 250μA | 3.2A Ta | 42nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD9123 | Vishay Siliconix | $0.59 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2015 | 4-DIP (0.300, 7.62mm) | Contains Lead | 3 | 639.990485mg | 4 | EAR99 | unknown | 1.3W | DUAL | 4 | 1 | Single | 1 | Not Qualified | R-PDIP-T3 | 1A | 4V | SILICON | DRAIN | 100V | TO-250AA | 0.8A | 0.8Ohm | -100V | P-Channel | 390pF @ 25V | 600m Ω @ 600mA, 10V | 4V @ 250μA | 1A Ta | 18nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7141DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si7141dpt1ge3-datasheets-0754.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 1.9mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 30 | 6.25W | 1 | Other Transistors | R-XDSO-C5 | 130 ns | 120ns | 55 ns | 100 ns | -60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | -1V | 6.25W Ta 104W Tc | -20V | P-Channel | 14300pF @ 10V | 1.9m Ω @ 25A, 10V | 2.3V @ 250μA | 60A Tc | 400nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6660JTVP02 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6660e3-datasheets-9278.pdf | TO-205AD, TO-39-3 Metal Can | 3 | 18 Weeks | 3 | EAR99 | unknown | 8541.21.00.95 | BOTTOM | WIRE | 2 | 1 | FET General Purpose Powers | 990mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | AMPLIFIER | 60V | 60V | 725mW Ta 6.25W Tc | 0.99A | 3Ohm | 10 pF | N-Channel | 50pF @ 25V | 3 Ω @ 1A, 10V | 2V @ 1mA | 990mA Tc | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7848BDP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7848bdpt1e3-datasheets-4537.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | 9mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 4.2W | 1 | FET General Purpose Powers | R-XDSO-C5 | 10 ns | 15ns | 10 ns | 30 ns | 47A | 20V | 40V | SILICON | DRAIN | SWITCHING | 4.2W Ta 36W Tc | 50A | 40V | N-Channel | 2000pF @ 20V | 1 V | 9m Ω @ 16A, 10V | 3V @ 250μA | 47A Tc | 50nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHW23N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihw23n60ege3-datasheets-0102.pdf | TO-247-3 | 3 | 19 Weeks | 38.000013g | 3 | No | 1 | Single | 1 | 22 ns | 38ns | 34 ns | 66 ns | 23A | 20V | SILICON | SWITCHING | 600V | 227W Tc | TO-247AD | 650V | N-Channel | 2418pF @ 100V | 158m Ω @ 12A, 10V | 4V @ 250μA | 23A Tc | 95nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4427BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4427bdyt1e3-datasheets-7261.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 10.5mOhm | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | 12 ns | 15ns | 15 ns | 242 ns | -12.6A | 12V | SILICON | 30V | -1.4V | 1.5W Ta | 9.7A | -30V | P-Channel | 10.5m Ω @ 12.6A, 10V | 1.4V @ 250μA | 9.7A Ta | 70nC @ 4.5V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5429DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si5429dut1ge3-datasheets-8656.pdf | PowerPAK® ChipFET™ Dual | 3.08mm | 850μm | 1.98mm | No SVHC | 8 | EAR99 | No | 31W | Single | 31W | 1 | 35 ns | 50ns | 20 ns | 60 ns | 12A | 20V | 30V | -1V | -30V | P-Channel | 2320pF @ 15V | 15m Ω @ 7A, 10V | 2.2V @ 250μA | 12A Tc | 63nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ422EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqj422ept1ge3-datasheets-8138.pdf | PowerPAK® SO-8 | Lead Free | 12 Weeks | Unknown | 6 | EAR99 | No | 1 | Single | 83W | 13 ns | 10ns | 8 ns | 29 ns | 75A | 20V | 40V | 2V | 83W Tc | N-Channel | 4660pF @ 20V | 3.4m Ω @ 18A, 10V | 2.5V @ 250μA | 74A Tc | 100nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS436DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sis436dnt1ge3-datasheets-9936.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 13 Weeks | 4.5mOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 3.5W | 1 | FET General Purpose Powers | S-XDSO-C5 | 15 ns | 12ns | 10 ns | 15 ns | 16A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 3.5W Ta 27.7W Tc | 32A | N-Channel | 855pF @ 10V | 10.5m Ω @ 10A, 10V | 2.3V @ 250μA | 16A Tc | 22nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR876ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sir876adpt1ge3-datasheets-8974.pdf | PowerPAK® SO-8 | 1.17mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 14.5MOhm | 8 | EAR99 | No | S17-0173-Single | DUAL | C BEND | 8 | 1 | Single | 5W | 1 | FET General Purpose Power | 150°C | R-PDSO-C5 | 11 ns | 16ns | 16 ns | 28 ns | 15.2A | 20V | SILICON | DRAIN | SWITCHING | 1.5V | 5W Ta 62.5W Tc | 40A | 100V | N-Channel | 1630pF @ 50V | 10.8m Ω @ 20A, 10V | 2.8V @ 250μA | 40A Tc | 49nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA444DJT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sia444djtt1ge3-datasheets-2722.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 3 | 15 Weeks | Unknown | 6 | EAR99 | No | e3 | MATTE TIN | DUAL | 260 | 6 | 1 | Single | 40 | 3.5W | 1 | FET General Purpose Power | S-PDSO-N3 | 12 ns | 12ns | 10 ns | 15 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1V | 3.5W Ta 19W Tc | 40A | N-Channel | 560pF @ 15V | 17m Ω @ 7.4A, 10V | 2.2V @ 250μA | 12A Tc | 15nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD23N06-31-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sud23n0631ge3-datasheets-2119.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 14 Weeks | 1.437803g | No SVHC | 31mOhm | 3 | yes | EAR99 | Tin | No | e3 | GULL WING | 260 | 4 | 1 | Single | 30 | 5.7W | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 250ns | 68 ns | 35 ns | 9.1A | 20V | SILICON | DRAIN | SWITCHING | 3V | 5.7W Ta 31.25W Tc | 50A | 20 mJ | 60V | N-Channel | 670pF @ 25V | 31m Ω @ 15A, 10V | 3V @ 250μA | 21.4A Tc | 17nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR798DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | /files/vishaysiliconix-sir798dpt1ge3-datasheets-4673.pdf | PowerPAK® SO-8 | 5 | 506.605978mg | Unknown | 8 | EAR99 | Tin | DUAL | C BEND | NOT SPECIFIED | 8 | 1 | NOT SPECIFIED | 1 | FET General Purpose Power | R-PDSO-C5 | 17 ns | 11ns | 9 ns | 43 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 1V | 83W Tc | 0.00205Ohm | N-Channel | 5050pF @ 15V | 2.05 Ω @ 20A, 10V | 2.5V @ 250μA | 60A Tc | 130nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2365EDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si2365edst1ge3-datasheets-4458.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 3 | yes | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | Single | 30 | 1W | 1 | Other Transistors | 150°C | 9 ns | 32μs | 21 μs | 65 ns | -4.5A | 8V | SILICON | SWITCHING | 20V | -1V | 1W Ta 1.7W Tc | 5.9A | -20V | P-Channel | 32m Ω @ 4A, 4.5V | 1V @ 250μA | 5.9A Tc | 36nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32509DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-Inverting | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sip32509dtt1ge3-datasheets-8606.pdf | SOT-23-6 Thin, TSOT-23-6 | 20 Weeks | Unknown | 54mOhm | 6 | On/Off | No | 5.5V | Slew Rate Controlled | 833mW | SPST | 3A | N-Channel | 1.1V~5.5V | 1.8 ms | 1 μs | 1 | General Purpose | High Side | Reverse Current | Not Required | 46m Ω | 1:1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2315BDS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si2315bdst1e3-datasheets-6333.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 50mOhm | 3 | yes | EAR99 | No | 3A | e3 | Matte Tin (Sn) | 12V | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | Other Transistors | 150°C | 15 ns | 35ns | 35 ns | 50 ns | -3A | 8V | -12V | SILICON | -900mV | 750mW Ta | -12V | P-Channel | 715pF @ 6V | -900 mV | 50m Ω @ 3.85A, 4.5V | 900mV @ 250μA | 3A Ta | 15nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32462DB-T2-GE1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | Non-Inverting | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sip32462dbt2ge1-datasheets-3105.pdf | 4-UFBGA, CSPBGA | 20 Weeks | Unknown | 150mOhm | 4 | On/Off | No | 5.5V | Slew Rate Controlled | 300mW | SIP32462 | SPST | 1.2A | N-Channel | 1.2V~5.5V | 20 μs | 2 μs | 1 | General Purpose | High Side | Reverse Current | Not Required | 50m Ω | 1:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3443DDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si3443ddvt1ge3-datasheets-9448.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 14 Weeks | 6 | EAR99 | Tin | DUAL | GULL WING | 260 | 30 | 1 | 27 ns | 25ns | 18 ns | 43 ns | -4A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1.7W Ta 2.7W Tc | MO-193AA | 4A | 0.047Ohm | P-Channel | 970pF @ 10V | 47m Ω @ 4.5A, 4.5V | 1.5V @ 250μA | 4A Ta 5.3A Tc | 30nC @ 8V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32432DNP3-T1GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | Non-Inverting | ROHS3 Compliant | /files/vishaysiliconix-sip32431dr3t1ge3-datasheets-2669.pdf | 4-UFDFN Exposed Pad | 14 Weeks | On/Off | Slew Rate Controlled | 4-TDFN (1.2x1.6) | P-Channel | 1.5V~5.5V | 1 | General Purpose | High Side | Reverse Current | 1.4A | Not Required | 105mOhm | 1:1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ240DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-siz240dtt1ge3-datasheets-1915.pdf | 8-PowerWDFN | 8-PowerPair® (3.3x3.3) | 40V | 4.3W Ta 33W Tc | 2 N-Channel (Dual) | 1180pF 1070pF @ 20V | 8.05mOhm @ 10A, 10V, 8.41mOhm @ 10A, 10V | 2.4V @ 250μA | 17.2A Ta 48A Tc 16.9A Ta 47A Tc | 23nC, 22nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP4612ADVP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | Non-Inverting | 0.8mm | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sip4612advpt1e3-datasheets-0066.pdf | PowerPAK® TSC-75-6 | Lead Free | 6 | 180mOhm | 6 | On/Off | EAR99 | No | 1 | e3 | MATTE TIN | 420mW | DUAL | 260 | 5V | 0.5mm | SIP4612 | 6 | 2.4V | 40 | 420mW | 1A | P-Channel | 2.4V~5.5V | 55 μs | 500 ns | 5.5V | 1 | General Purpose | High Side | Current Limiting (Adjustable), Over Temperature, UVLO | 0.5A | TRANSIENT; THERMAL; UNDER VOLTAGE | 250MOhm | Not Required | 150m Ω | 1:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4228DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4228dyt1e3-datasheets-3035.pdf | 8-SOIC (0.154, 3.90mm Width) | 14 Weeks | 3.1W | SI4228 | 8-SO | 790pF | 8A | 25V | 3.1W | 2 N-Channel (Dual) | 790pF @ 12.5V | 18mOhm @ 7A, 10V | 1.4V @ 250μA | 8A | 25nC @ 10V | Logic Level Gate | 18 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP4612BDVP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | Non-Inverting | 0.8mm | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sip4612advpt1e3-datasheets-0066.pdf | PowerPAK® TSC-75-6 | 6 | 180mOhm | 6 | On/Off | EAR99 | No | 1 | e3 | MATTE TIN | 420mW | DUAL | 260 | 5V | 0.5mm | 6 | 5.5V | 2.4V | 40 | 420mW | 1A | 1A | P-Channel | 2.4V~5.5V | 55 μs | 500 ns | 1 | General Purpose | High Side | Current Limiting (Adjustable), Over Temperature, UVLO | 0.5A | TRANSIENT; THERMAL; UNDER VOLTAGE | Not Required | 150m Ω | 1:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1913DH-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si1913dht1e3-datasheets-4366.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | Unknown | 490mOhm | 6 | No | 570mW | SI1913 | Dual | 570mW | 2 | SC-70-6 (SOT-363) | 18 ns | 25ns | 25 ns | 15 ns | -1A | 8V | 20V | -450mV | 570mW | 490mOhm | 20V | 2 P-Channel (Dual) | -450 mV | 490mOhm @ 880mA, 4.5V | 1V @ 100μA | 880mA | 1.8nC @ 4.5V | Logic Level Gate | 490 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIC473ED-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | microBUCK® | Surface Mount | -40°C~105°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sic473edt1ge3-datasheets-5997.pdf | PowerPAK® MLP55-27 | 16 Weeks | 55V | PowerPAK® MLP55-27 | 50.6V | Adjustable | Step-Down | 1 | Positive | Buck | Yes | 50.6V | 4.5V | 5A | 0.8V | 20kHz~2MHz |
