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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI7392DP-T1-E3 | Vishay Siliconix | $0.53 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7392dpt1e3-datasheets-6589.pdf | PowerPAK® SO-8 | 5 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | YES | DUAL | C BEND | 260 | 8 | 40 | 1 | FET General Purpose Power | Not Qualified | R-XDSO-C5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 1.8W Ta | 9A | 50A | 0.00975Ohm | 45 mJ | N-Channel | 9.75m Ω @ 15A, 10V | 3V @ 250μA | 9A Ta | 15nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI3932DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si3932dvt1ge3-datasheets-4386.pdf | SOT-23-6 Thin, TSOT-23-6 | 1.1mm | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 58MOhm | 6 | yes | EAR99 | Tin | No | e3 | 1.4W | GULL WING | 260 | SI3932 | 6 | 2 | Dual | 30 | 1.14W | 2 | FET General Purpose Powers | 150°C | 5 ns | 15ns | 10 ns | 10 ns | 3.4A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2.2V | 3.7A | 30V | 2 N-Channel (Dual) | 235pF @ 15V | 1.2 V | 58m Ω @ 3.4A, 10V | 2.2V @ 250μA | 3.7A | 6nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| SI7392ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7392adpt1e3-datasheets-6602.pdf | PowerPAK® SO-8 | 5 | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 5W | 1 | R-XDSO-C5 | 8 ns | 17.5A | 20V | SILICON | DRAIN | SWITCHING | 5W Ta 27.5W Tc | 50A | 0.0075Ohm | 30 mJ | 30V | N-Channel | 1465pF @ 15V | 7.5m Ω @ 12.5A, 10V | 2.5V @ 250μA | 30A Tc | 38nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SI9933CDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si9933cdyt1ge3-datasheets-4547.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 58MOhm | 8 | yes | EAR99 | Tin | No | 470mW | GULL WING | 260 | SI9933 | 8 | 2 | Dual | 30 | 2 | Other Transistors | 21 ns | 50ns | 13 ns | 29 ns | -4A | 12V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -1.4V | 3.1W | 4A | -20V | 2 P-Channel (Dual) | 665pF @ 10V | 58m Ω @ 4.8A, 4.5V | 1.4V @ 250μA | 4A | 26nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| SI7495DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7495dpt1e3-datasheets-6648.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 506.605978mg | 6.5mOhm | e3 | PURE MATTE TIN | 260 | 1 | Single | 30 | Other Transistors | 100 ns | 200ns | 230 ns | 350 ns | 13A | 8V | 12V | 1.8W Ta | -12V | P-Channel | 6.5m Ω @ 21A, 4.5V | 900mV @ 1mA | 13A Ta | 140nC @ 5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ730DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-siz730dtt1ge3-datasheets-7074.pdf | 6-PowerPair™ | 6mm | 750μm | 3.73mm | Lead Free | 6 | 15 Weeks | Unknown | 6 | EAR99 | No | e3 | MATTE TIN | 48W | 260 | SIZ730 | 6 | 2 | Dual | 40 | 2 | FET General Purpose Power | 15ns | 10 ns | 35A | 20V | SILICON | DRAIN SOURCE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1V | 27W 48W | 100A | 0.0053Ohm | 45 mJ | 2 N-Channel (Half Bridge) | 830pF @ 15V | 9.3m Ω @ 15A, 10V | 2.2V @ 250μA | 16A 35A | 24nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SI5463EDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5463edct1e3-datasheets-8486.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | 84.99187mg | 62mOhm | 8 | 1 | Single | 1206-8 ChipFET™ | 1.85 μs | 3.2μs | 3.2 μs | 1.9 μs | -51A | 12V | 20V | 1.25W Ta | 62mOhm | -20V | P-Channel | 62mOhm @ 4A, 4.5V | 450mV @ 250μA (Min) | 3.8A Ta | 15nC @ 4.5V | 62 mΩ | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ942EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-sqj942ept1ge3-datasheets-7636.pdf | PowerPAK® SO-8 | 4 | 12 Weeks | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PSSO-G4 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 17W 48W | 15A | 60A | 0.022Ohm | 18.5 mJ | 2 N-Channel (Dual) | 809pF @ 20V 1451pF @ 20V | 22m Ω @ 7.8A, 10V, 11m Ω @ 10.1A, 10V | 2.3V @ 250μA | 15A Tc 45A Tc | 19.7nC @ 10V, 33.8nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4004DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4004dyt1ge3-datasheets-2063.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 5W | DUAL | GULL WING | 260 | 8 | 30 | 1 | FET General Purpose Power | 15 ns | 12ns | 9 ns | 17 ns | 12A | 20V | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-Channel | 1280pF @ 10V | 13.8m Ω @ 11A, 10V | 2.5V @ 250μA | 12A Tc | 33nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1036X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/vishaysiliconix-si1036xt1ge3-datasheets-9854.pdf | SOT-563, SOT-666 | 6 | 14 Weeks | 540mOhm | EAR99 | e3 | Matte Tin (Sn) | YES | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 220mW | 2 N-Channel (Dual) | 36pF @ 15V | 540m Ω @ 500mA, 4.5V | 1V @ 250μA | 610mA Ta | 1.2nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4654DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4654dyt1e3-datasheets-7077.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 186.993455mg | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1 | 30 ns | 10ns | 10 ns | 50 ns | 18.6A | 16V | SILICON | SWITCHING | 2.5W Ta 5.9W Tc | 0.004Ohm | 25V | N-Channel | 3770pF @ 15V | 4m Ω @ 15A, 10V | 2.5V @ 250μA | 28.6A Tc | 100nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||
| SIZ904DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-siz904dtt1ge3-datasheets-0342.pdf | 6-PowerPair™ | 6mm | 750μm | 5mm | Lead Free | 6 | 14 Weeks | 24mOhm | 8 | EAR99 | No | 33W | SIZ904 | 2 | Dual | 2 | FET General Purpose Power | R-PDSO-N6 | 9ns | 8 ns | 14 ns | 16A | 20V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 20W 33W | 30A | 5 mJ | 30V | 2 N-Channel (Half Bridge) | 435pF @ 15V | 24m Ω @ 7.8A, 10V | 2.5V @ 250μA | 12A 16A | 12nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| SI8467DB-T2-E1 | Vishay Siliconix | $0.88 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8467dbt2e1-datasheets-2409.pdf | 4-XFBGA, CSPBGA | Lead Free | 4 | 73MOhm | 4 | EAR99 | No | BOTTOM | BALL | Single | 1 | Other Transistors | 25 ns | 45ns | 20 ns | 50 ns | -3.7A | -1.5V | SILICON | SWITCHING | 20V | 20V | 780mW Ta 1.8W Tc | P-Channel | 475pF @ 10V | 73m Ω @ 1A, 4.5V | 1.5V @ 250μA | 21nC @ 10V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1965DH-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si1965dht1e3-datasheets-1509.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | Lead Free | 6 | 14 Weeks | 28.009329mg | 390MOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.25W | GULL WING | 260 | SI1965 | 6 | Dual | 40 | 740mW | 2 | Other Transistors | 12 ns | 27ns | 27 ns | 15 ns | 1.14A | 8V | SILICON | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | 1.3A | 2 P-Channel (Dual) | 120pF @ 6V | 390m Ω @ 1A, 4.5V | 1V @ 250μA | 1.3A | 4.2nC @ 8V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| SIE860DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie860dft1ge3-datasheets-2541.pdf | 10-PolarPAK® (M) | 4 | 10 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 10 | Single | 30 | 5.2W | 1 | FET General Purpose Power | R-XDSO-N4 | 35 ns | 20ns | 30 ns | 50 ns | 38A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 5.2W Ta 104W Tc | 60A | 80A | N-Channel | 4500pF @ 15V | 2.1m Ω @ 21.7A, 10V | 2.5V @ 250μA | 60A Tc | 105nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SQJ200EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj200ept1ge3-datasheets-4098.pdf | PowerPAK® SO-8 Dual | 12 Weeks | EAR99 | unknown | 48W | NOT SPECIFIED | NOT SPECIFIED | 60A | 20V | 27W 48W | 2 N-Channel (Dual) | 975pF @ 10V | 8.8m Ω @ 16A, 10V | 2V @ 250μA | 20A 60A | 18nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7888DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7888dpt1ge3-datasheets-3136.pdf | PowerPAK® SO-8 | 5 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1 | FET General Purpose Powers | R-XDSO-C5 | 10 ns | 11ns | 11 ns | 24 ns | 9.4A | 20V | SILICON | DRAIN | SWITCHING | 1.8W Ta | 50A | 0.012Ohm | 20 mJ | 30V | N-Channel | 12m Ω @ 12.4A, 10V | 2V @ 250μA | 9.4A Ta | 10.5nC @ 5V | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||
| SI4532CDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4532cdyt1ge3-datasheets-4680.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 89mOhm | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 2.78W | DUAL | GULL WING | 260 | SI4532 | 8 | 2 | 30 | 2.78W | 2 | 150°C | 5.5 ns | 13ns | 7.7 ns | 17 ns | 6A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1V | 6A | 30V | N and P-Channel | 305pF @ 15V | 1 V | 47m Ω @ 3.5A, 10V | 3V @ 250μA | 6A 4.3A | 9nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||
| SI7888DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7888dpt1ge3-datasheets-3136.pdf | PowerPAK® SO-8 | 5.969mm | 1.0668mm | 5.0038mm | 5 | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 20 | 1.8W | 1 | FET General Purpose Power | R-XDSO-C5 | 10 ns | 11ns | 11 ns | 24 ns | 9.4A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1.8W Ta | 50A | 20 mJ | N-Channel | 12m Ω @ 12.4A, 10V | 2V @ 250μA | 9.4A Ta | 10.5nC @ 5V | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||
| SI4816BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4816bdyt1e3-datasheets-1915.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 18.5mOhm | 8 | EAR99 | Tin | No | e3 | 1.25W | DUAL | GULL WING | 260 | SI4816 | 8 | 2 | 30 | 2 | 150°C | 13 ns | 9ns | 9 ns | 31 ns | 5.8A | 20V | SILICON | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 3V | 1W 1.25W | 2 N-Channel (Half Bridge) | 18.5m Ω @ 6.8A, 10V | 3V @ 250μA | 5.8A 8.2A | 10nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| SQM110P04-04L-GE3 | Vishay Siliconix | $33.16 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm110p0404lge3-datasheets-3225.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | No | SINGLE | GULL WING | 260 | 4 | 40 | 375W | 1 | Other Transistors | R-PSSO-G2 | 17 ns | 15ns | 45 ns | 112 ns | 120A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 40V | 375W Tc | 240A | P-Channel | 13980pF @ 20V | 4m Ω @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 330nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SI7234DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7234dpt1ge3-datasheets-7285.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | Lead Free | 6 | 14 Weeks | 506.605978mg | 3.4mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 46W | C BEND | 260 | SI7234 | 8 | 2 | 30 | 3.5W | 2 | FET General Purpose Powers | R-XDSO-C6 | 30 ns | 15ns | 25 ns | 90 ns | 60A | 12V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 46W | 2 N-Channel (Dual) | 5000pF @ 6V | 3.4m Ω @ 20A, 4.5V | 1.5V @ 250μA | 120nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||
| SI9424BDY-T1-GE3 | Vishay Siliconix | $3.91 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si9424bdyt1e3-datasheets-6263.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | Single | 30 | 1.25W | 1 | Other Transistors | 30 ns | 40ns | 70 ns | 130 ns | -7.1A | 9V | SILICON | 20V | -450mV | 1.25W Ta | 5.6A | 0.025Ohm | -20V | P-Channel | 25m Ω @ 7.1A, 4.5V | 850mV @ 250μA | 5.6A Ta | 40nC @ 4.5V | 2.5V 4.5V | ±9V | ||||||||||||||||||||||||||||||||||||||||||
| SUM90N10-8M2P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sum90n108m2pe3-datasheets-9746.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.826mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.437803g | Unknown | 8.2mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 3 | 1 | Single | 40 | 300W | 1 | FET General Purpose Power | 175°C | R-PSSO-G2 | 23 ns | 17ns | 9 ns | 34 ns | 90A | 20V | SILICON | SWITCHING | 2.5V | 3.75W Ta 300W Tc | 240A | 100V | N-Channel | 6290pF @ 50V | 8.2m Ω @ 20A, 10V | 4.5V @ 250μA | 90A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SUD50P04-40P-T4-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50p0440pt4e3-datasheets-3311.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 1.437803g | 40mOhm | 1 | Single | 6A | 20V | 40V | 2.4W Ta 24W Tc | P-Channel | 1555pF @ 20V | 40m Ω @ 5A, 10V | 2.7V @ 250μA | 6A Ta 8A Tc | 60nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5902BDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si5902bdct1e3-datasheets-1153.pdf | 8-SMD, Flat Lead | 1.1mm | Lead Free | 14 Weeks | 84.99187mg | No SVHC | 65mOhm | 8 | No | 3.12W | SI5902 | 2 | Dual | 1.5W | 2 | 150°C | 1206-8 ChipFET™ | 220pF | 4 ns | 10 ns | 3.7A | 20V | 30V | 1.5V | 3.12W | 53mOhm | 30V | 2 N-Channel (Dual) | 220pF @ 15V | 1.5 V | 65mOhm @ 3.1A, 10V | 3V @ 250μA | 4A | 7nC @ 10V | Logic Level Gate | 65 mΩ | |||||||||||||||||||||||||||||||||||||||||||||
| SUP36N20-54P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sup36n2054pe3-datasheets-3416.pdf | TO-220-3 | 3 | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | Single | 3.12W | 1 | FET General Purpose Power | 16 ns | 170ns | 9 ns | 27 ns | 36A | 25V | 200V | SILICON | SWITCHING | 4.5V | 3.12W Ta 166W Tc | TO-220AB | 80A | 20 mJ | 200V | N-Channel | 3100pF @ 25V | 4.5 V | 53m Ω @ 20A, 15V | 4.5V @ 250μA | 36A Tc | 127nC @ 15V | 10V 15V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
| SQJQ910EL-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-sqjq910elt1ge3-datasheets-5218.pdf | PowerPAK® 8 x 8 Dual | 12 Weeks | 4 | PowerPAK® 8 x 8 Dual | 100V | 187W | 2 N-Channel (Dual) | 2832pF @ 50V | 8.6mOhm @ 10A, 10V | 2.5V @ 250μA | 70A Tc | 58nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50P08-26-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50p0826e3-datasheets-4091.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Single | 8.3W | 1 | TO-252, (D-Pak) | 5.16nF | 50ns | 65 ns | 90 ns | 12.9A | 20V | 80V | 8.3W Ta 136W Tc | 26mOhm | -80V | P-Channel | 5160pF @ 40V | 26mOhm @ 12.9A, 10V | 4V @ 250μA | 50A Tc | 155nC @ 10V | 26 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1022R-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si1022rt1ge3-datasheets-7035.pdf | SC-75A | 1.58mm | 700μm | 760μm | Lead Free | 3 | 14 Weeks | No SVHC | 3Ohm | 3 | yes | EAR99 | LOW THRESHOLD | Tin | No | e3 | DUAL | GULL WING | 3 | 1 | Single | 250mW | 1 | 330mA | 20V | SILICON | SWITCHING | 60V | 60V | 2.5V | 250mW Ta | N-Channel | 30pF @ 25V | 1.25 Ω @ 500mA, 10V | 2.5V @ 250μA | 330mA Ta | 0.6nC @ 4.5V | 4.5V 10V | ±20V |
