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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Screening Level | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | FET Technology | Number of Outputs | Threshold Voltage | Power - Max | Power Dissipation-Max | Recovery Time | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| DG412LEDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 1.2mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg412ledyt1ge3-datasheets-1089.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5mm | 16 | 20 Weeks | 26Ohm | 16 | 4 | Pure Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 5V | 0.65mm | 1 | NOT SPECIFIED | 4 | -5V | 26Ohm | 68 dB | 60ns | 3V~16V ±3V~8V | 1:1 | SPST - NO | 1nA | 5pF 6pF | 50ns, 30ns | 6.6pC | -114dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4972DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si4972dyt1e3-datasheets-4612.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 506.605978mg | 8 | 2.5W | SI4972 | 2 | Dual | 8-SO | 1.08nF | 108 ns | 130ns | 26 ns | 22 ns | 7.2A | 20V | 30V | 3.1W 2.5W | 26.5mOhm | 30V | 2 N-Channel (Dual) | 1080pF @ 15V | 14.5mOhm @ 6A, 10V | 3V @ 250μA | 10.8A 7.2A | 28nC @ 10V | Standard | 14.5 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG406DJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 30μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg406dnt1e3-datasheets-9986.pdf | 28-DIP (0.600, 15.24mm) | 39.7mm | 3.31mm | 14.73mm | 15V | Lead Free | 500μA | 28 | 12 Weeks | 4.190003g | 44V | 7.5V | 100Ohm | 28 | yes | No | 1 | e3 | Matte Tin (Sn) | 625mW | 15V | 2.54mm | DG406 | 28 | 16 | 625mW | 1 | 600 ns | 300 ns | 20V | Multiplexer | 350 ns | Dual, Single | 5V | -15V | 16 | 100Ohm | 69 dB | 5Ohm | BREAK-BEFORE-MAKE | 400ns | 12V ±5V~20V | 0.02A | 16:1 | 500pA | 8pF 130pF | 200ns, 150ns | 15pC | 5 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5975DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si5975dct1ge3-datasheets-2325.pdf | 8-SMD, Flat Lead | 1.1W | 1206-8 ChipFET™ | 3.1A | 12V | 1.1W | 2 P-Channel (Dual) | 86mOhm @ 3.1A, 4.5V | 450mV @ 1mA (Min) | 3.1A | 9nC @ 4.5V | Logic Level Gate | 86 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2501DB-T2-GE1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2501dbt2ge1-datasheets-8223.pdf | 16-XFBGA, WLCSP | 23 Weeks | 8Ohm | NOT SPECIFIED | NOT SPECIFIED | 4 | 550MHz | 8Ohm | 1:1 | 1.8V~5.5V | SPST - NC | 400pA | 2.9pF 2.8pF | 100ns, 60ns | -2pC | -83dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6969DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si6969dqt1e3-datasheets-2341.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | 157.991892mg | 8 | 1.1W | SI6969 | 2 | Dual | 8-TSSOP | 25 ns | 35ns | 40 ns | 80 ns | 4.6A | 8V | 12V | 1.1W | 34mOhm | -12V | 2 P-Channel (Dual) | 34mOhm @ 4.6A, 4.5V | 450mV @ 250μA (Min) | 40nC @ 4.5V | Logic Level Gate | 34 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG308BDQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg308bdye3-datasheets-1370.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | 1μA | 16 | 15 Weeks | 172.98879mg | 44V | 4V | 160Ohm | 16 | yes | unknown | 4 | e3 | Matte Tin (Sn) | 640mW | GULL WING | 260 | 15V | 0.65mm | DG308 | 16 | 1 | 40 | Multiplexer or Switches | +-15/12V | 4 | Not Qualified | SPST | 200 ns | 150 ns | 22V | Dual, Single | 4V | -15V | SEPARATE OUTPUT | 85Ohm | 90 dB | 1.7Ohm | BREAK-BEFORE-MAKE | NO | 4V~44V ±4V~22V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 200ns, 150ns | 1pC | 1.7 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7980DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7980dpt1ge3-datasheets-4445.pdf | PowerPAK® SO-8 Dual | 8 | No | 21.9W | SI7980 | Dual | 3.4W | 2 | PowerPAK® SO-8 Dual | 1.01nF | 18ns | 10 ns | 25 ns | 8A | 16V | 20V | 19.8W 21.9W | 22mOhm | 2 N-Channel (Half Bridge) | 1010pF @ 10V | 22mOhm @ 5A, 10V | 2.5V @ 250μA | 8A | 27nC @ 10V | Standard | 22 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG201BDQ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | 50μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg201bdyt1e3-datasheets-0360.pdf | 16-TSSOP (0.173, 4.40mm Width) | 13 Weeks | 25V | 4.5V | 160Ohm | 16 | No | DG201 | 4 | 640mW | 4 | 16-TSSOP | SPST | 22V | Dual, Single | 4.5V | 4 | 4 | 85Ohm | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2Ohm | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ700DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-siz700dtt1ge3-datasheets-2485.pdf | 6-PowerPair™ | 6mm | 750μm | 3.73mm | 6 | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | 2.8W | C BEND | 260 | 6 | 2 | Dual | 40 | 2.8W | 2 | FET General Purpose Power | R-XDSO-C6 | 12 ns | 8ns | 10 ns | 47 ns | 16A | 16V | SILICON | DRAIN | 20V | METAL-OXIDE SEMICONDUCTOR | 2.2V | 2.36W 2.8W | 13.1A | 60A | 20V | 2 N-Channel (Half Bridge) | 1300pF @ 10V | 8.6m Ω @ 15A, 10V | 2.2V @ 250μA | 35nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG418BDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg418bdqt1e3-datasheets-1717.pdf | 8-DIP (0.300, 7.62mm) | 10.92mm | 3.81mm | 7.11mm | 20V | 1μA | 8 | 10 Weeks | 930.006106mg | 36V | 13V | 35Ohm | 8 | yes | No | 4 | e3 | Matte Tin (Sn) | 400mW | 15V | 2.54mm | DG418 | 8 | 1 | Multiplexer or Switches | 1 | SPST | 89 ns | 80 ns | 22V | 15V | Dual, Single | 7V | -15V | 25Ohm | 82 dB | BREAK-BEFORE-MAKE | 99ns | NO | 12V ±15V | 1:1 | SPST - NO | 250pA | 12pF 12pF | 89ns, 80ns | 38pC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2343DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si2343dst1ge3-datasheets-3348.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 53mOhm | 3 | yes | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1 | Other Transistors | Not Qualified | 10 ns | 15ns | 20 ns | 31 ns | -4A | 20V | SILICON | SWITCHING | 30V | -3V | 750mW Ta | -30V | P-Channel | 540pF @ 15V | -3 V | 53m Ω @ 4A, 10V | 3V @ 250μA | 3.1A Ta | 21nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG413DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg413dqt1e3-datasheets-3810.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | Lead Free | 1μA | 16 | 13 Weeks | 665.986997mg | 36V | 13V | 80Ohm | 16 | yes | No | 4 | 100pA | e3 | Matte Tin (Sn) | 600mW | GULL WING | 260 | 15V | 1.27mm | DG413 | 16 | 1 | 40 | 600mW | Multiplexer or Switches | SPST | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 35Ohm | 45Ohm | 68 dB | BREAK-BEFORE-MAKE | 220ns | 5V~44V ±5V~20V | 1:1 | SPST - NO/NC | 250pA | 9pF 9pF | 175ns, 145ns | 5pC | -85dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISH625DN-T1-GE3 | Vishay Siliconix | $0.52 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sish625dnt1ge3-datasheets-4498.pdf | PowerPAK® 1212-8SH | 14 Weeks | PowerPAK® 1212-8SH | 30V | 3.7W Ta 52W Tc | P-Channel | 4427pF @ 15V | 7mOhm @ 15A, 10V | 2.5V @ 250μA | 17.3A Ta 35A Tc | 126nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG387BDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | 230μA | ROHS3 Compliant | 2008 | /files/vishaysiliconix-dg390bdje3-datasheets-5350.pdf | 14-DIP (0.300, 7.62mm) | 15V | 1mA | 10 Weeks | 36V | 13V | 50Ohm | 14 | yes | unknown | 230μA | 470mW | DG387 | 14 | 470mW | 1 | 150 ns | 130 ns | 22V | 15V | Dual, Single | 7V | 2 | 50Ohm | 2:1 | SPDT | ±15V | 5nA | 14pF 14pF | 150ns, 130ns (Typ) | 10pC | -74dB @ 500kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7322ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-si7322adnt1ge3-datasheets-4913.pdf | PowerPAK® 1212-8 | 1.17mm | 14 Weeks | EAR99 | NOT SPECIFIED | 1 | NOT SPECIFIED | 3.3W | 150°C | 6 ns | 9 ns | 5.4A | 20V | 26W Tc | 100V | N-Channel | 360pF @ 50V | 57m Ω @ 5.5A, 10V | 4V @ 250μA | 15.1A Tc | 13nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG429DN-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 20μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg428dje3-datasheets-5967.pdf | 20-LCC (J-Lead) | 9.04mm | 3.69mm | 9.04mm | 15V | 100μA | 20 | 12 Weeks | 722.005655mg | 36V | 13V | 150Ohm | 20 | yes | unknown | 1 | 100μA | e3 | Matte Tin (Sn) | 800mW | QUAD | J BEND | 260 | 15V | DG429 | 20 | 4 | 40 | 800mW | 2 | Not Qualified | 300 ns | 300 ns | 22V | Multiplexer | 280 ns | Dual, Single | 7V | -15V | 8 | 100Ohm | 75 dB | 5Ohm | BREAK-BEFORE-MAKE | 12V ±15V | 0.03A | 4:1 | SP4T | 500pA | 11pF 20pF | 150ns, 150ns | 1pC | 5 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4618DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si4618dyt1e3-datasheets-9868.pdf | 8-SOIC (0.154, 3.90mm Width) | 15 Weeks | 506.605978mg | No SVHC | 8 | No | 2.35W | 2 | Dual | 2 | 8-SO | 1.535nF | 11.4A | 16V | 30V | 1V | 1.98W 4.16W | 10mOhm | 30V | 2 N-Channel (Half Bridge) | 1535pF @ 15V | 17mOhm @ 8A, 10V | 2.5V @ 1mA | 8A 15.2A | 44nC @ 10V | Standard | 17 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG419LDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BICMOS | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg419ldqt1e3-datasheets-6551.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 1μA | 8 | 10 Weeks | 540.001716mg | 12V | 2.7V | 20Ohm | 8 | yes | EAR99 | VIDEO APPLICATION | unknown | 1 | 20nA | e3 | MATTE TIN | 400mW | GULL WING | 260 | 5V | DG419 | 8 | 1 | 40 | 400mW | Multiplexer or Switches | Not Qualified | 41 ns | 32 ns | 6V | Dual, Single | 3V | -5V | 2 | 1 | 20Ohm | 71 dB | BREAK-BEFORE-MAKE | 33ns | 44ns | 2.7V~12V ±3V~6V | 2:1 | SPDT | 1nA | 5pF | 43ns, 31ns | 1pC | -71dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8497DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8497dbt2e1-datasheets-7015.pdf | 6-UFBGA | 21 Weeks | 6 | No | 1 | Single | 6-microfoot | 1.32nF | 50 ns | 10ns | 22 ns | 75 ns | 13A | 12V | 30V | 2.77W Ta 13W Tc | 53mOhm | P-Channel | 1320pF @ 15V | 53mOhm @ 1.5A, 4.5V | 1.1V @ 250μA | 13A Tc | 49nC @ 10V | 53 mΩ | 2V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG1413EQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1.2mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg1413ent1ge4-datasheets-3369.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5mm | Lead Free | 1μA | 16 | 172.98879mg | Unknown | 24V | 4.5V | 1.8Ohm | 16 | No | 4 | GULL WING | 5V | 0.65mm | DG1413 | 1 | 210MHz | 150 ns | 120 ns | 16.5V | 15V | Dual, Single | 4.5V | -5V | 4 | 1.8Ohm | 80 dB | 0.08Ohm | 380ns | 510ns | 4.5V~24V ±4.5V~15V | 1:1 | SPST - NO/NC | 550pA | 11pF 24pF | 150ns, 120ns | -20pC | 80m Ω | -100dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISH114ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sish114adnt1ge3-datasheets-7794.pdf | PowerPAK® 1212-8SH | 14 Weeks | PowerPAK® 1212-8SH | 30V | 3.7W Ta 39W Tc | N-Channel | 1230pF @ 15V | 7.5mOhm @ 18A, 10V | 2.5V @ 250μA | 18A Ta 35A Tc | 32nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG417DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2015 | /files/vishaysiliconix-dg417dyt1e3-datasheets-1245.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 1μA | 8 | 540.001716mg | 36V | 13V | 35Ohm | 8 | no | No | 1 | e0 | Tin/Lead (Sn/Pb) | 400mW | GULL WING | 8 | 400mW | Multiplexer or Switches | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | 1 | 35Ohm | 20mOhm | BREAK-BEFORE-MAKE | NC | 12V ±15V | 1:1 | SPST - NC | 250pA | 8pF 8pF | 175ns, 145ns | 60pC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA110DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia110djt1ge3-datasheets-8313.pdf | PowerPAK® SC-70-6 | 14 Weeks | PowerPAK® SC-70-6 Single | 100V | 3.5W Ta 19W Tc | N-Channel | 550pF @ 50V | 55mOhm @ 4A, 10V | 4V @ 250μA | 5.4A Ta 12A Tc | 13nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG444BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 5.08mm | ROHS3 Compliant | /files/vishaysiliconix-dg444bdj-datasheets-7580.pdf | 16-DIP (0.300, 7.62mm) | 20.13mm | 7.62mm | 1μA | 16 | 36V | 13V | 80Ohm | 16 | no | unknown | 4 | e0 | 470mW | NOT SPECIFIED | 15V | DG444 | 16 | 1 | NOT SPECIFIED | 470mW | Multiplexer or Switches | Not Qualified | 300 ns | 200 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 80Ohm | 90 dB | BREAK-BEFORE-MAKE | NC | 12V ±15V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TN2404K-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-tn2404kt1e3-datasheets-0731.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 3 | EAR99 | Tin | e3 | DUAL | GULL WING | 260 | 1 | Single | 30 | 360mW | 1 | FET General Purpose Powers | 5 ns | 12ns | 16 ns | 35 ns | 200mA | 20V | SILICON | SWITCHING | 800mV | 360mW Ta | 0.2A | 4Ohm | 240V | N-Channel | 800 mV | 4 Ω @ 300mA, 10V | 2V @ 250μA | 200mA Ta | 8nC @ 10V | 2.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG187AP/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg186ap883-datasheets-7590.pdf | 14-DIP (0.300, 7.62mm) | 14 | 30Ohm | 14 | no | 1 | e0 | Tin/Lead (Sn/Pb) | NO | DUAL | 2.54mm | 14 | Multiplexer or Switches | 1 | Not Qualified | 38535Q/M;38534H;883B | 18V | 10V | 30Ohm | BREAK-BEFORE-MAKE | 2:1 | SPDT | ±15V | 1nA | 9pF 6pF | 150ns, 130ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD024PBF | Vishay Siliconix | $1.35 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd024pbf-datasheets-1303.pdf | 60V | 2.5A | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | Lead Free | 8 Weeks | Unknown | 100mOhm | 4 | No | Single | 1.3W | 1 | 4-DIP, Hexdip, HVMDIP | 640pF | 13 ns | 58ns | 58 ns | 25 ns | 2.5A | 20V | 60V | 4V | 1.3W Ta | 180 ns | 100mOhm | 60V | N-Channel | 640pF @ 25V | 100mOhm @ 1.5A, 10V | 4V @ 250μA | 2.5A Ta | 25nC @ 10V | 100 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG201AAK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg201aak-datasheets-7661.pdf | 16-CDIP (0.300, 7.62mm) | 19.56mm | 3.94mm | 7.62mm | 15V | 2mA | 36V | 13V | 175Ohm | 16 | 900mW | 4 | 900mW | 4 | 16-CERDIP | 600 ns | 450 ns | 22V | 15V | Dual | 7V | 4 | 4 | 175Ohm | 175mOhm | 1:1 | SPST - NC | ±15V | 1nA | 5pF 5pF | 600ns, 450ns | 20pC | -90dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF840APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irf840apbf-datasheets-2205.pdf | 500V | 8A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 11 Weeks | 6.000006g | No SVHC | 850mOhm | 3 | Tin | No | 1 | Single | 125W | 1 | TO-220AB | 1.018nF | 11 ns | 23ns | 19 ns | 26 ns | 8A | 30V | 500V | 4V | 125W Tc | 850mOhm | 500V | N-Channel | 1018pF @ 25V | 4 V | 850mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 38nC @ 10V | 850 mΩ | 10V | ±30V |
