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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | High Level Output Current | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Number of Inputs | Output | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| IRFZ48SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfz48spbf-datasheets-5795.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 8 Weeks | 3 | No | D2PAK | 2.4nF | 8.1 ns | 250ns | 250 ns | 210 ns | 50A | 20V | 60V | 3.7W Ta 190W Tc | N-Channel | 2400pF @ 25V | 18mOhm @ 43A, 10V | 4V @ 250μA | 50A Tc | 110nC @ 10V | 18 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG419BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg418bdqt1e3-datasheets-1717.pdf | 8-DIP (0.300, 7.62mm) | 10.92mm | 3.81mm | 7.11mm | 20V | 1μA | 8 | 8 Weeks | 930.006106mg | 36V | 13V | 25Ohm | 8 | no | unknown | 4 | e0 | TIN LEAD | NO | 400mW | NOT SPECIFIED | 15V | 2.54mm | 8 | 1 | NOT SPECIFIED | Multiplexer or Switches | 1 | Not Qualified | 89 ns | 80 ns | 22V | 15V | Dual, Single | 7V | -15V | 25Ohm | 35Ohm | 82 dB | BREAK-BEFORE-MAKE | NO/NC | 12V ±15V | 2:1 | SPDT | 250pA | 12pF 12pF | 89ns, 80ns | 38pC | -88dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP15N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihp15n65ege3-datasheets-5997.pdf | TO-220-3 | Lead Free | 3 | 18 Weeks | 3 | yes | NOT SPECIFIED | Single | NOT SPECIFIED | 34W | 1 | 24ns | 25 ns | 48 ns | 15A | 4V | SILICON | SWITCHING | 34W Tc | TO-220AB | 0.28Ohm | 286 mJ | 650V | N-Channel | 1640pF @ 100V | 280m Ω @ 8A, 10V | 4V @ 250μA | 15A Tc | 96nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG441BDY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg442bdj-datasheets-7370.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 8 Weeks | 665.986997mg | 25V | 13V | 80Ohm | 16 | unknown | 4 | 900mW | GULL WING | 1.27mm | DPDT | 900mW | Multiplexer or Switches | Not Qualified | 220 ns | 120 ns | 22V | 15V | Dual, Single | 7V | 4 | SEPARATE OUTPUT | 80Ohm | BREAK-BEFORE-MAKE | 300ns | NC | 12V ±15V | 1:1 | SPST - NC | 500pA | 4pF 4pF | 220ns, 120ns | -1pC | 2 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG22N60EF-GE3 | Vishay Siliconix | $4.04 |
Min: 1 Mult: 1 |
download | EF | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg22n60efge3-datasheets-6385.pdf | TO-247-3 | 21 Weeks | TO-247AC | 600V | 179W Tc | N-Channel | 1423pF @ 100V | 182mOhm @ 11A, 10V | 4V @ 250μA | 19A Tc | 96nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG611DJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg612dyt1-datasheets-2726.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 500MHz | 1μA | 16 | 1.627801g | 18V | 10V | 45Ohm | 16 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | 470mW | 16 | 470mW | Multiplexer or Switches | 515-3V | 35 ns | 25 ns | 15V | Dual, Single | 10V | 4 | SEPARATE OUTPUT | 45Ohm | 45Ohm | BREAK-BEFORE-MAKE | NC | 10V~18V ±10V~15V | 1:1 | SPST - NC | 250pA | 3pF 2pF | 35ns, 25ns | 4pC | 2 Ω | -87dB @ 5MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB18N50KPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfb18n50kpbf-datasheets-6636.pdf | 500V | 18A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 18 Weeks | 6.000006g | Unknown | 290mOhm | 3 | No | 1 | Single | 200W | 1 | TO-220AB | 2.83nF | 22 ns | 60ns | 30 ns | 45 ns | 17A | 30V | 500V | 500V | 5V | 220W Tc | 290mOhm | 500V | N-Channel | 2830pF @ 25V | 5 V | 290mOhm @ 10A, 10V | 5V @ 250μA | 17A Tc | 120nC @ 10V | 290 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG442BDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg442bdj-datasheets-7370.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 8 Weeks | 665.986997mg | 25V | 13V | 80Ohm | 16 | no | unknown | 4 | e0 | TIN LEAD | 900mW | GULL WING | 240 | 15V | 1.27mm | 16 | 1 | 30 | 900mW | Multiplexer or Switches | Not Qualified | 220 ns | 120 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 80Ohm | 90 dB | 2Ohm | BREAK-BEFORE-MAKE | NO | 12V ±15V | 1:1 | SPST - NO | 500pA | 4pF 4pF | 220ns, 120ns | -1pC | 2 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4630DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4630dyt1e3-datasheets-7093.pdf | 8-SOIC (0.154, 3.90mm Width) | 14 Weeks | 8-SO | 25V | 3.5W Ta 7.8W Tc | N-Channel | 6670pF @ 15V | 2.7mOhm @ 20A, 10V | 2.2V @ 250μA | 40A Tc | 161nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM187BXA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sjm187bxa-datasheets-0078.pdf | 14 | 18V | 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU320PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfu320pbf-datasheets-8190.pdf | 400V | 3.1A | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | Lead Free | 3 | 8 Weeks | 329.988449mg | Unknown | 1.8Ohm | 3 | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 42W | 1 | FET General Purpose Powers | 10 ns | 14ns | 13 ns | 30 ns | 3.1A | 20V | SILICON | DRAIN | SWITCHING | 4V | 2.5W Ta 42W Tc | 400V | N-Channel | 350pF @ 25V | 1.8 Ω @ 1.9A, 10V | 4V @ 250μA | 3.1A Tc | 20nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM200BCC01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF720SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf720spbf-datasheets-8875.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | 3 | No | 1 | Single | D2PAK | 410pF | 10 ns | 14ns | 13 ns | 30 ns | 3.3A | 20V | 400V | 3.1W Ta 50W Tc | 1.8Ohm | 400V | N-Channel | 410pF @ 25V | 1.8Ohm @ 2A, 10V | 4V @ 250μA | 3.3A Tc | 20nC @ 10V | 1.8 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM200BIA01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | 2016 | Ceramic | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF28N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sihf28n60efge3-datasheets-9707.pdf | TO-220-3 Full Pack | 3 | 21 Weeks | 6.000006g | 123mOhm | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSFM-T3 | 24 ns | 40ns | 39 ns | 82 ns | 28A | 20V | SILICON | ISOLATED | SWITCHING | 39W Tc | TO-220AB | 75A | 600V | N-Channel | 2714pF @ 100V | 123m Ω @ 14A, 10V | 4V @ 250μA | 28A Tc | 120nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9431DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | /files/vishaysiliconix-dg9431edyge3-datasheets-8821.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 1μA | 8 | 540.001716mg | 12V | 2.7V | 30Ohm | 8 | no | unknown | 1 | e0 | Tin/Lead (Sn/Pb) | 400mW | DUAL | GULL WING | 240 | 3V | 8 | 1 | 30 | 400mW | Multiplexer or Switches | 3/5V | Not Qualified | 75 ns | 50 ns | Single | 2 | 1 | 30Ohm | 74 dB | 0.4Ohm | BREAK-BEFORE-MAKE | 2:1 | 2.7V~5V | SPDT | 100pA | 7pF | 75ns, 50ns | 2pC | 400m Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG065N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg065n60ege3-datasheets-0023.pdf | TO-247-3 | 14 Weeks | TO-247AC | 600V | 250W Tc | N-Channel | 2700pF @ 100V | 65mOhm @ 16A, 10V | 5V @ 250μA | 40A Tc | 74nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2037DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 20nA | 1.1mm | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2037dst1-datasheets-7724.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad | 3mm | 3mm | Lead Free | 1μA | 8 | 5.5V | 1.8V | 5Ohm | 8 | No | 2 | 20nA | e3 | Matte Tin (Sn) | 320mW | DUAL | GULL WING | 260 | 3V | 0.65mm | DG2037 | 8 | 1 | 30 | 320mW | Multiplexer or Switches | 3/5V | SPST | 35 ns | 31 ns | Single | 2 | SEPARATE OUTPUT | 5Ohm | 2.5Ohm | 61 dB | 0.3Ohm | BREAK-BEFORE-MAKE | 40ns | NO | 1:1 | 1.8V~5.5V | SPST - NO | 1nA | 15pF 17pF | 30ns, 22ns | 1pC | 200m Ω (Max) | -67dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG22N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sihg22n60ege3-datasheets-1867.pdf | TO-247-3 | 15.87mm | 20.82mm | 5.31mm | Lead Free | 14 Weeks | 38.000013g | Unknown | 180mOhm | 3 | No | 1 | Single | 227W | 1 | TO-247AC | 1.92nF | 18 ns | 68ns | 54 ns | 59 ns | 21A | 20V | 600V | 2V | 227W Tc | 180mOhm | 600V | N-Channel | 1920pF @ 100V | 180mOhm @ 11A, 10V | 4V @ 250μA | 21A Tc | 86nC @ 10V | 180 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 9204202XC | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~125°C TA | Bulk | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | FlatPack | 16 | 44V | 13V | 2 | DUAL | NOT SPECIFIED | 15V | 16 | 4 | DIFFERENTIAL MULTIPLEXER | NOT SPECIFIED | 2 | R-XDFP-F16 | 20V | 5V | -15V | 30mA | 100Ohm | 75 dB | 15Ohm | 150ns | 4:1 | SP4T | ±15V | 500pA | 3pF 14pF | 150ns, 150ns | 20pC | 15 Ω (Max) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG23N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TA | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sihg23n60ege3-datasheets-2090.pdf | TO-247-3 | 3 | 14 Weeks | 38.000013g | 158mOhm | NO | 1 | 1 | R-PSFM-T3 | 23A | SILICON | DRAIN | SWITCHING | 600V | 600V | 227W Tc | TO-247AC | 63A | 353 mJ | N-Channel | 2418pF @ 100V | 158m Ω @ 12A, 10V | 4V @ 250μA | 23A Tc | 95nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 9204101EA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | CDIP | 36V | 13V | 16 | No | 4 | 900mW | 22V | 7V | 4 | 4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG70N60AEF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | EF | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sihg70n60aefge3-datasheets-2450.pdf | TO-247-3 | 24.99mm | 21 Weeks | EAR99 | NOT SPECIFIED | 1 | NOT SPECIFIED | 417W | 150°C | 45 ns | 219 ns | 60A | 20V | 417W Tc | 600V | N-Channel | 5348pF @ 100V | 41m Ω @ 35A, 10V | 4V @ 250μA | 60A Tc | 410nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 9073101EA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | CDIP | 36V | 13V | 16 | 4 | 900mW | 22V | 7V | 4 | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ44SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irfz44spbf-datasheets-3540.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 8 Weeks | 1.437803g | 3 | yes | EAR99 | Tin | No | GULL WING | 260 | 4 | 1 | Single | 40 | 3.7W | 1 | R-PSSO-G2 | 14 ns | 110ns | 92 ns | 45 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 3.7W Ta 150W Tc | 200A | 0.028Ohm | N-Channel | 1900pF @ 25V | 28m Ω @ 31A, 10V | 4V @ 250μA | 50A Tc | 67nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG612DY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | NMOS | -1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg612dyt1-datasheets-2726.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 500MHz | Lead Free | 1μA | 16 | 665.986997mg | No SVHC | 18V | 10V | 45Ohm | 16 | yes | VIDEO APPLICATION | No | 4 | 5nA | e3 | Matte Tin (Sn) | 600mW | GULL WING | 260 | 15V | 1.27mm | DG612 | 16 | 1 | 40 | 600mW | Multiplexer or Switches | 515-3V | SPST | 50 ns | 35 ns | 15V | Dual, Single | 10V | -3V | 4 | SEPARATE OUTPUT | 45Ohm | 45Ohm | 74 dB | 2Ohm | BREAK-BEFORE-MAKE | NO | 10V~18V ±10V~15V | 1:1 | SPST - NO | 250pA | 3pF 2pF | 35ns, 25ns | 4pC | 2 Ω | -87dB @ 5MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP254PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfp254pbf-datasheets-4012.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 140mOhm | 3 | No | 1 | Single | 190W | 1 | TO-247-3 | 2.7nF | 15 ns | 63ns | 50 ns | 74 ns | 23A | 20V | 250V | 4V | 190W Tc | 560 ns | 140mOhm | 250V | N-Channel | 2700pF @ 25V | 4 V | 140mOhm @ 14A, 10V | 4V @ 250μA | 23A Tc | 140nC @ 10V | 140 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG4053AEN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | -1μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg4051aent1e4-datasheets-4533.pdf | 16-WFQFN | 2.6mm | 750μm | 1.8mm | 730MHz | 1μA | 16 | Unknown | 12V | 2.7V | 100Ohm | 16 | yes | 3 | 525mW | QUAD | NO LEAD | 260 | 3V | 0.4mm | DG4053 | 16 | 2 | 40 | 525mW | 3 | Not Qualified | 151 ns | 138 ns | 5V | 3V | Multiplexer | 172 ns | Dual, Single | 2.5V | -3V | 6 | 100Ohm | 67 dB | 3Ohm | BREAK-BEFORE-MAKE | 119ns | 2.7V~12V ±2.5V~5V | 2:1 | SPDT | 1nA | 3pF 4pF | 108ns, 92ns | 0.25pC | 3 Ω | -67dB @ 10MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP450LCPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp450lcpbf-datasheets-4692.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 12 Weeks | 38.000013g | Unknown | 400mOhm | 3 | No | 1 | Single | 190W | 1 | TO-247-3 | 2.2nF | 14 ns | 49ns | 30 ns | 30 ns | 14A | 30V | 500V | 4V | 190W Tc | 400mOhm | N-Channel | 2200pF @ 25V | 400mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 74nC @ 10V | 400 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG411LDY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | BICMOS | 1μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg411ldqt1-datasheets-8917.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | Lead Free | 1μA | 16 | 547.485991mg | No SVHC | 12V | 2.7V | 33Ohm | 16 | yes | No | 4 | 20nA | e3 | MATTE TIN | 650mW | GULL WING | 260 | 5V | 1.27mm | DG411 | 16 | 1 | 40 | 650mW | Multiplexer or Switches | 280MHz | SPST | 50 ns | 35 ns | 6V | 5V | Dual, Single | 3V | -5V | 4 | SEPARATE OUTPUT | 17Ohm | 30Ohm | 68 dB | BREAK-BEFORE-MAKE | 60ns | NC | 2.7V~12V ±3V~6V | 1:1 | SPST - NC | 250pA | 5pF 6pF | 19ns, 12ns | 5pC | -95dB @ 1MHz |
