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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Polarity | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Screening Level | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | High Level Output Current | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | Switching | Feedback Cap-Max (Crss) | Switch-on Time-Max | Normal Position | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| IRF9Z14PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | /files/vishaysiliconix-irf9z14pbf-datasheets-0020.pdf | -60V | -6.7A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 500mOhm | 3 | No | 1 | Single | 43W | 1 | TO-220AB | 270pF | 11 ns | 63ns | 31 ns | 10 ns | -6.7A | 20V | 60V | -4V | 43W Tc | 500mOhm | -60V | P-Channel | 270pF @ 25V | -2 V | 500mOhm @ 4A, 10V | 4V @ 250μA | 6.7A Tc | 12nC @ 10V | 500 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG413HSAK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2017 | 16-SOIC (0.154, 3.90mm Width) | 14 Weeks | 35Ohm | 4 | 16-SOIC | 35Ohm | 12V ±5V~20V | 1:1 | SPST - NO/NC | 250pA | 12pF 12pF | 105ns, 80ns | 22pC | -88dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1330EDL-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si1330edlt1e3-datasheets-1598.pdf | SC-70, SOT-323 | 2mm | 1mm | 1.25mm | Lead Free | 3 | 14 Weeks | 124.596154mg | Unknown | 2.5Ohm | 3 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 280mW | 1 | FET General Purpose Powers | 3.8 ns | 4.8ns | 4.8 ns | 12.8 ns | 250mA | 20V | SILICON | SWITCHING | 2V | 280mW Ta | 0.24A | 60V | N-Channel | 2.5 Ω @ 250mA, 10V | 2.5V @ 250μA | 240mA Ta | 0.6nC @ 4.5V | 3V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG411LAK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 16-CDIP (0.300, 7.62mm) | 17Ohm | 4 | 16-CERDIP | 280MHz | 17Ohm | 2.7V~12V ±3V~6V | 1:1 | SPST - NC | 250pA | 5pF 6pF | 19ns, 12ns | 5pC | -95dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS08DN-T1-GE3 | Vishay Siliconix | $0.89 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss08dnt1ge3-datasheets-3236.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S (3.3x3.3) | 25V | 5W Ta 65.7W Tc | N-Channel | 3670pF @ 12.5V | 1.23mOhm @ 15A, 10V | 2.2V @ 250μA | 53.9A Ta 195.5A Tc | 82nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG417AK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Surface Mount | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2005 | 8-SOIC (0.154, 3.90mm Width) | 10.16mm | 3.94mm | 7.62mm | 1μA | 8 | 36V | 13V | 35Ohm | 8 | no | Lead, Tin | 1 | e0 | Tin/Lead (Sn/Pb) | Non-Inverting | 600mW | 2.54mm | 8 | Multiplexer or Switches | 1 | Not Qualified | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | 30mA | 35Ohm | 35Ohm | BREAK-BEFORE-MAKE | NC | 1:1 | SPST - NC | ±15V | 250pA | 8pF 8pF | 175ns, 145ns | 60pC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA62DP-T1-RE3 | Vishay Siliconix | $0.52 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira62dpt1re3-datasheets-3698.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 5.2W Ta 65.7W Tc | N-Channel | 4460pF @ 15V | 1.2mOhm @ 15A, 10V | 2.2V @ 250μA | 51.4A Ta 80A Tc | 93nC @ 10V | 4.5V 10V | +16V, -12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG418LEDY-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-dg419ledqt1ge3-datasheets-7465.pdf | 8-SOIC (0.154, 3.90mm Width) | 19 Weeks | 1 | 8-SO | 9Ohm | 3V~16V ±3V~8V | 1:1 | SPST | 10nA | 11pF 32pF | 40ns, 35ns | 26pC | -72dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR800ADP-T1-GE3 | Vishay Siliconix | $1.47 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir800adpt1re3-datasheets-8055.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 20V | 5W Ta 62.5W Tc | N-Channel | 3415pF @ 10V | 1.35mOhm @ 10A, 10V | 1.5V @ 250μA | 50.2A Ta 177A Tc | 53nC @ 10V | 2.5V 10V | +12V, -8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2733EDN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-dg2733edqt1ge3-datasheets-3597.pdf | 10-VFDFN Exposed Pad | 18 Weeks | 2 | 10-DFN (3x3) | 120MHz | 500mOhm | 2:1 | 1.65V~5.5V | SPDT | 78ns, 58ns | 60mOhm | -90dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR170DP-T1-RE3 | Vishay Siliconix | $1.53 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir170dpt1re3-datasheets-4392.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 100V | 6.25W Ta 104W Tc | N-Channel | 6195pF @ 50V | 4.8mOhm @ 20A, 10V | 2.5V @ 250μA | 23.2A Ta 95A Tc | 140nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG419DJ | Vishay Siliconix | $1.61 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 30mA | Non-RoHS Compliant | 2008 | /files/vishaysiliconix-dg417dyt1e3-datasheets-1245.pdf | 8-DIP (0.300, 7.62mm) | 10.92mm | 3.81mm | 7.11mm | Lead Free | 1μA | 8 | 8 Weeks | 930.006106mg | 36V | 13V | 35Ohm | 8 | no | No | 1 | e0 | Tin/Lead (Sn/Pb) | 400mW | 8 | 1 | 400mW | Multiplexer or Switches | SPST | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | 2 | 35Ohm | 35Ohm | BREAK-BEFORE-MAKE | 12V ±15V | 2:1 | SPDT | 250pA | 8pF 8pF | 175ns, 145ns | 60pC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD50P08-28_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50p0828ge3-datasheets-4795.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | 136W | 1 | TO-252AA | 48A | 20V | 80V | 136W Tc | P-Channel | 6035pF @ 25V | 28mOhm @ 12.5A, 10V | 3.5V @ 250μA | 48A Tc | 145nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9234EDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1.75mm | RoHS Compliant | /files/vishaysiliconix-dg9233edyge3-datasheets-1801.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 4mm | 8 | 21 Weeks | 2 | YES | DUAL | GULL WING | NOT SPECIFIED | 3V | 5.5V | 1 | NOT SPECIFIED | 2 | R-PDSO-G8 | 25Ohm | 1:1 | 2.7V~5.5V | SPST - NO/NC | 100pA | 3.8pF | 75ns, 50ns | -0.78pC | 400m Ω | -108dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU9210PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfu9210pbf-datasheets-5149.pdf | -1.9A | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | Lead Free | 3 | 8 Weeks | 329.988449mg | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | Other Transistors | 8 ns | 12ns | 13 ns | 11 ns | 1.9A | 20V | SILICON | DRAIN | SWITCHING | 200V | 2.5W Ta 25W Tc | 7.6A | 3Ohm | -200V | P-Channel | 170pF @ 25V | 3 Ω @ 1.1A, 10V | 4V @ 250μA | 1.9A Tc | 8.9nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG304BDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1nA | ROHS3 Compliant | 2014 | /files/vishaysiliconix-dg307bdje3-datasheets-5499.pdf | 14-DIP (0.300, 7.62mm) | 19.3mm | 3.81mm | 7.11mm | 15V | Lead Free | 100μA | 14 | 10 Weeks | 1.620005g | 36V | 13V | 50Ohm | 14 | yes | No | 2 | 1nA | e3 | Matte Tin (Sn) | 470mW | 15V | DG304 | 14 | 1 | 470mW | Multiplexer or Switches | SPST | 110 ns | 70 ns | 22V | 15V | Dual, Single | 7V | -15V | 2 | SEPARATE OUTPUT | 50Ohm | 62 dB | BREAK-BEFORE-MAKE | NO | 1:1 | SPST - NO | ±15V | 5nA | 14pF 14pF | 110ns, 70ns (Typ) | 30pC | -74dB @ 500kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD113PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-irfd113pbf-datasheets-5477.pdf | 4-DIP (0.300, 7.62mm) | 2 | 8 Weeks | 4 | EAR99 | No | DUAL | 2 | 1 | 1 | FET General Purpose Power | R-PDIP-T2 | 10 ns | 15ns | 10 ns | 15 ns | 800mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 1W Tc | 0.8A | 0.8Ohm | 25 pF | N-Channel | 200pF @ 25V | 800m Ω @ 800mA, 10V | 4V @ 250μA | 800mA Tc | 7nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG419BAK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2016 | 8-CDIP (0.300, 7.62mm) | 14 Weeks | 25Ohm | 1 | 8-CERDIP | 25Ohm | 12V ±15V | 2:1 | SPDT | 250pA | 12pF 12pF | 89ns, 80ns | 38pC | -88dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF840LCLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf840lclpbf-datasheets-5874.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.41mm | 9.65mm | 4.7mm | 8 Weeks | 2.387001g | No | 1 | Single | 3.1W | 1 | I2PAK | 1.1nF | 12 ns | 25ns | 19 ns | 27 ns | 8A | 30V | 500V | 3.1W Ta 125W Tc | 850mOhm | N-Channel | 1100pF @ 25V | 850mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 39nC @ 10V | 850 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG441LDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | BICMOS | Non-RoHS Compliant | 2007 | /files/vishaysiliconix-dg441ldy-datasheets-2707.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 665.986997mg | 12V | 2.7V | 30Ohm | 16 | no | unknown | 4 | e0 | Tin/Lead (Sn/Pb) | 650mW | GULL WING | 1.27mm | 16 | 650mW | Multiplexer or Switches | Not Qualified | 280MHz | 60 ns | 35 ns | 6V | 5V | Dual, Single | 3V | 4 | SEPARATE OUTPUT | 30Ohm | BREAK-BEFORE-MAKE | NC | 2.7V~12V ±3V~6V | 1:1 | SPST - NC | 1nA | 5pF 6pF | 60ns, 35ns | 5pC | 100m Ω | -95dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP50010E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup50010ege3-datasheets-6169.pdf | TO-220-3 | 14 Weeks | NOT SPECIFIED | NOT SPECIFIED | 60V | 375W Tc | N-Channel | 10895pF @ 30V | 2m Ω @ 30A, 10V | 4V @ 250μA | 150A Tc | 212nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG529AK/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg529ak883-datasheets-2725.pdf | 18-CDIP (0.300, 7.62mm) | 18 | 16 Weeks | 36V | 13V | 400Ohm | 18 | no | No | 1 | e0 | Tin/Lead (Sn/Pb) | NO | DUAL | 15V | 18 | 4 | DIFFERENTIAL MULTIPLEXER | Multiplexer or Switches | +-15V | 2 | 38535Q/M;38534H;883B | 22V | 7V | -15V | 400Ohm | BREAK-BEFORE-MAKE | 1500ns | 4:1 | SP4T | ±15V | 1nA | 5pF 25pF | 1.5μs, 1μs | 4pC | 24 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG16N50C-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-sihg16n50ce3-datasheets-6459.pdf | TO-247-3 | 3 | 11 Weeks | 38.000013g | Unknown | 3 | yes | No | 260 | 3 | 1 | Single | 40 | 250W | 1 | FET General Purpose Power | 27 ns | 156ns | 31 ns | 29 ns | 16A | 30V | SILICON | SWITCHING | 3V | 250W Tc | TO-247AC | 40A | 500V | N-Channel | 1900pF @ 25V | 380m Ω @ 8A, 10V | 5V @ 250μA | 16A Tc | 68nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG612DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg612dyt1-datasheets-2726.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 665.986997mg | 18V | 10V | 45Ohm | 16 | no | unknown | 4 | e0 | Tin/Lead (Sn/Pb) | 600mW | GULL WING | 1.27mm | 16 | 600mW | Multiplexer or Switches | 515-3V | Not Qualified | 500MHz | 50 ns | 35 ns | 15V | Dual, Single | 10V | 4 | SEPARATE OUTPUT | 45Ohm | 45Ohm | BREAK-BEFORE-MAKE | NO | 10V~18V ±10V~15V | 1:1 | SPST - NO | 250pA | 3pF 2pF | 35ns, 25ns | 4pC | 2 Ω | -87dB @ 5MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG120N60E-GE3 | Vishay Siliconix | $3.67 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg120n60ege3-datasheets-6710.pdf | TO-247-3 | 14 Weeks | TO-247AC | 600V | 179W Tc | N-Channel | 1562pF @ 100V | 120mOhm @ 12A, 10V | 5V @ 250μA | 25A Tc | 45nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG643DJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg641dy-datasheets-2728.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 15V | 500MHz | 6mA | 16 | 1.627801g | 21V | 10V | 15Ohm | 16 | no | unknown | 2 | e0 | Tin/Lead (Sn/Pb) | NO | 470mW | DUAL | 16 | Multiplexer or Switches | 15-3V | 2 | Not Qualified | 70 ns | 50 ns | 15V | Single | 10V | 15Ohm | BREAK-BEFORE-MAKE | 3V~15V ±3V~15V | 2:1 | SPDT | 10nA | 12pF 12pF | 70ns, 50ns | 19pC | 1 Ω | -87dB @ 5MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9510STRLPBF | Vishay Siliconix | $1.20 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9510strlpbf-datasheets-7460.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 1.2Ohm | 3 | No | 1 | Single | 3.7W | 1 | D2PAK | 200pF | 10 ns | 27ns | 17 ns | 15 ns | -4A | 20V | 100V | 3.7W Ta 43W Tc | 1.2Ohm | -100V | P-Channel | 200pF @ 25V | 1.2Ohm @ 2.4A, 10V | 4V @ 250μA | 4A Tc | 8.7nC @ 10V | 1.2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM300BIC01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF830STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-irf830strlpbf-datasheets-8512.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 11 Weeks | 1.437803g | 1.5Ohm | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 610pF | 8.2 ns | 16ns | 16 ns | 42 ns | 4.5A | 20V | 500V | 74W Tc | 1.5Ohm | N-Channel | 610pF @ 25V | 1.5Ohm @ 2.7A, 10V | 4V @ 250μA | 4.5A Tc | 38nC @ 10V | 1.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9233DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg9233dyt1-datasheets-2750.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 1μA | 8 | 540.001716mg | 12V | 2.7V | 30Ohm | 8 | no | unknown | 2 | e0 | Tin/Lead (Sn/Pb) | 400mW | DUAL | GULL WING | 8 | 400mW | Multiplexer or Switches | 3/5V | Not Qualified | 75 ns | 50 ns | Single | 2 | SEPARATE OUTPUT | 30Ohm | 30Ohm | BREAK-BEFORE-MAKE | NC | 1:1 | 2.7V~12V | SPST - NO | 100pA | 7pF 13pF | 75ns, 50ns | 2pC | 400m Ω | -90dB @ 1MHz |
