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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Interface | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | Number of Functions | JESD-609 Code | Feature | Terminal Finish | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Max Output Current | Input Characteristics | Output Type | Voltage - Load | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Threshold Voltage | Switch Type | Output Configuration | Fault Protection | Current - Output (Max) | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Output Peak Current Limit-Nom | Built-in Protections | Output Current Flow Direction | Driver Number of Bits | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | Voltage - Supply (Vcc/Vdd) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation Ambient-Max | Rds On (Typ) | Ratio - Input:Output | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI1553CDL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1553cdlt1ge3-datasheets-8652.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 14 Weeks | EAR99 | unknown | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 6 | 2 | Not Qualified | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 0.34W | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 340mW | 0.7A | 0.39Ohm | N and P-Channel | 38pF @ 10V | 0.29W | 390m Ω @ 700mA, 4.5V | 1.5V @ 250μA | 700mA 500mA | 1.8nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM75N15-18P-E3 | Vishay Siliconix | $0.37 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum75n1518pe3-datasheets-3284.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | No SVHC | 18mOhm | 3 | yes | EAR99 | No | e4 | Silver (Ag) | GULL WING | 260 | 4 | Single | 30 | 3.12W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 10ns | 8 ns | 25 ns | 75A | 20V | 150V | SILICON | SWITCHING | 4.5V | 3.12W Ta 312.5W Tc | 150V | N-Channel | 4180pF @ 75V | 4.5 V | 18m Ω @ 20A, 10V | 4.5V @ 250μA | 75A Tc | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM110N10-09-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sum110n1009e3-datasheets-9656.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.437803g | Unknown | 9.5MOhm | 3 | yes | EAR99 | No | e3 | MATTE TIN OVER NICKEL | GULL WING | 260 | 4 | 1 | Single | 30 | 3.75W | 1 | FET General Purpose Power | R-PSSO-G2 | 20 ns | 125ns | 130 ns | 55 ns | 110A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 3.75W Ta 375W Tc | 70 ns | 440A | 100V | N-Channel | 6700pF @ 25V | 4 V | 9.5m Ω @ 30A, 10V | 4V @ 250μA | 110A Tc | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP85N04-03-E3 | Vishay Siliconix | $0.37 |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup85n0403e3-datasheets-3341.pdf | TO-220-3 | 3 | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | Single | 250W | 1 | FET General Purpose Power | 15 ns | 90ns | 125 ns | 95 ns | 85A | 20V | SILICON | DRAIN | 3.75W Ta 250W Tc | TO-220AB | 240A | 40V | N-Channel | 6860pF @ 25V | 3.5m Ω @ 30A, 10V | 3V @ 250μA | 85A Tc | 250nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4340CDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4340cdyt1e3-datasheets-4887.pdf | 14-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 186.993455mg | 14 | 5.4W | SI4340 | 2 | 14-SOIC | 1.3nF | 22 ns | 10ns | 10 ns | 32 ns | 11.5A | 16V | 20V | 3W 5.4W | 9.4mOhm | 2 N-Channel (Dual) | 1300pF @ 10V | 9.4mOhm @ 11.5A, 10V | 3V @ 250μA | 14.1A 20A | 32nC @ 10V | Logic Level Gate | 9.4 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR168DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount, Through Hole | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sir168dpt1ge3-datasheets-3601.pdf | PowerPAK® SO-8 | 5 | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1 | FET General Purpose Power | R-PDSO-C5 | 23 ns | 70ns | 15 ns | 33 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 2.4V | 5W Ta 34.7W Tc | 0.0044Ohm | 30V | N-Channel | 2040pF @ 15V | 2.4 V | 4.4m Ω @ 15A, 10V | 2.4V @ 250μA | 40A Tc | 75nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ974EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj974ept1ge3-datasheets-6081.pdf | PowerPAK® SO-8 Dual | 12 Weeks | PowerPAK® SO-8 Dual | 100V | 48W | 2 N-Channel (Dual) | 1050pF @ 25V | 25.5mOhm @ 10A, 10V | 2.5V @ 250μA | 30A Tc | 30nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP85N03-3M6P-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/vishaysiliconix-sup85n033m6pge3-datasheets-8506.pdf | TO-220-3 | 3 | 6.000006g | No SVHC | 3 | EAR99 | unknown | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 30 | 3.1W | 1 | FET General Purpose Power | Not Qualified | 11 ns | 10ns | 10 ns | 35 ns | 85A | 20V | SILICON | DRAIN | SWITCHING | 1V | 3.1W Ta 78.1W Tc | TO-220AB | 30V | N-Channel | 3535pF @ 15V | 3.6m Ω @ 22A, 10V | 2.5V @ 250μA | 85A Tc | 100nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2307BDS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si2307bdst1e3-datasheets-7112.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 78mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | Other Transistors | 9 ns | 12ns | 12 ns | 25 ns | -2.5A | 20V | SILICON | 30V | -3V | 750mW Ta | -30V | P-Channel | 380pF @ 15V | -3 V | 78m Ω @ 3.2A, 10V | 3V @ 250μA | 2.5A Ta | 15nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50P04-15-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sud50p0415e3-datasheets-3027.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 26 Weeks | 1.437803g | No SVHC | 15mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 4 | 1 | Single | 100W | 1 | Other Transistors | R-PSSO-G2 | 15 ns | 380ns | 140 ns | 75 ns | -50A | 20V | SILICON | DRAIN | 40V | -1V | 3W Ta 100W Tc | -40V | P-Channel | 5400pF @ 25V | -1 V | 15m Ω @ 30A, 10V | 1V @ 250μA (Min) | 50A Tc | 130nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3493BDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si3493bdvt1e3-datasheets-9093.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 27.5mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 2.08W | 1 | Other Transistors | 22 ns | 72ns | 84 ns | 75 ns | -8A | 8V | SILICON | SWITCHING | 20V | -400mV | 2.08W Ta 2.97W Tc | 8A | 25A | -20V | P-Channel | 1805pF @ 10V | -900 mV | 27.5m Ω @ 7A, 4.5V | 900mV @ 250μA | 8A Tc | 43.5nC @ 5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7860DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7860dpt1ge3-datasheets-3692.pdf | PowerPAK® SO-8 | 5.969mm | 1.0668mm | 5.0038mm | Lead Free | 5 | No SVHC | 8mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.8W | 1 | FET General Purpose Power | R-XDSO-C5 | 3.45nF | 18 ns | 12ns | 12 ns | 46 ns | 18A | 20V | 30V | SILICON | DRAIN | SWITCHING | 3V | 1.8W Ta | 50A | 45 mJ | 30V | N-Channel | 3 V | 8m Ω @ 18A, 10V | 3V @ 250μA | 11A Ta | 18nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4423DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4423dyt1e3-datasheets-0791.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.5494mm | 3.9878mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 7.5mOhm | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | 75 ns | 165ns | 165 ns | 460 ns | -14A | 8V | SILICON | SWITCHING | -400mV | 1.5W Ta | 20V | P-Channel | -400 mV | 7.5m Ω @ 14A, 4.5V | 900mV @ 600μA | 10A Ta | 175nC @ 5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6660JTXL02 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6660e3-datasheets-9278.pdf | TO-205AD, TO-39-3 Metal Can | 3 | 3 | EAR99 | BOTTOM | WIRE | 2 | 725mW | 1 | FET General Purpose Powers | 990mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | AMPLIFIER | 60V | 60V | 725mW Ta 6.25W Tc | 0.99A | 3Ohm | N-Channel | 50pF @ 25V | 3 Ω @ 1A, 10V | 2V @ 1mA | 990mA Tc | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50P04-09L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount, Through Hole | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sud50p0409le3-datasheets-1671.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 14 Weeks | 1.437803g | Unknown | 9.4mOhm | 3 | yes | EAR99 | Tin | No | e3 | GULL WING | 4 | 1 | Single | 3W | 1 | Other Transistors | R-PSSO-G2 | 10 ns | 60ns | 140 ns | 145 ns | 50A | 20V | SILICON | DRAIN | 40V | -1V | 3W Ta 136W Tc | -40V | P-Channel | 4800pF @ 25V | -1 V | 9.4m Ω @ 24A, 10V | 3V @ 250μA | 50A Tc | 150nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR482DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir482dpt1ge3-datasheets-9469.pdf | PowerPAK® SO-8 | 5 | 506.605978mg | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1 | FET General Purpose Powers | R-PDSO-C5 | 35A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 5W Ta 27.7W Tc | 70A | 0.0075Ohm | 20 mJ | N-Channel | 1575pF @ 15V | 5.6m Ω @ 20A, 10V | 2.3V @ 250μA | 35A Tc | 38nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF540PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irf540pbf-datasheets-2998.pdf | 100V | 28A | TO-220-3 | 10.51mm | 19.89mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 77mOhm | 3 | No | 28A | 100V | 1 | Single | 150W | 1 | 175°C | TO-220AB | 1.7nF | 11 ns | 44ns | 43 ns | 53 ns | 28A | 20V | 100V | 4V | 150W Tc | 360 ns | 77mOhm | 100V | N-Channel | 1700pF @ 25V | 4 V | 77mOhm @ 17A, 10V | 4V @ 250μA | 28A Tc | 72nC @ 10V | 77 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VP0300B-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | 13 Weeks | 3 | 800mW | Single | 6.25W | 1 | 150pF | -3A | 20V | 30V | 2.5Ohm | -30V | P-Channel | 150pF @ 15V | 2.5Ohm @ 1A, 12V | 4.5V @ 1mA | 320mA Ta | 2.5 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2325DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si2325dst1e3-datasheets-4364.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 3 | yes | EAR99 | Tin | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | Other Transistors | Not Qualified | -690mA | 20V | SILICON | SWITCHING | 150V | -4.5V | 750mW Ta | -150V | P-Channel | 510pF @ 25V | -4.5 V | 1.2 Ω @ 500mA, 10V | 4.5V @ 250μA | 530mA Ta | 12nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n7002t1e3-datasheets-0519.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 1.437803g | No SVHC | 7.5Ohm | 3 | EAR99 | No | 3A | e3 | Matte Tin (Sn) | 60V | DUAL | GULL WING | 3 | 1 | Single | 200mW | 1 | FET General Purpose Power | 7 ns | 11 ns | 115mA | 20V | 60V | SILICON | 2.1V | 200mW Ta | 5 pF | 60V | N-Channel | 50pF @ 25V | 2 V | 7.5 Ω @ 500mA, 10V | 2.5V @ 250μA | 115mA Ta | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7414DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7414dnt1e3-datasheets-7511.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 25mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | FET General Purpose Power | S-XDSO-C5 | 15 ns | 12ns | 12 ns | 30 ns | 8.7A | 20V | 60V | SILICON | DRAIN | SWITCHING | 3V | 1.5W Ta | 5.6A | 30A | 60V | N-Channel | 3 V | 25m Ω @ 8.7A, 10V | 3V @ 250μA | 5.6A Ta | 25nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5855CDC-T1-E3 | Vishay Siliconix | $0.08 |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5855cdct1e3-datasheets-9830.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | 8 | 15 Weeks | 84.99187mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 30 | 1.9W | 1 | 11 ns | 34ns | 34 ns | 22 ns | -3.7A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 1.3W Ta 2.8W Tc | 2.5A | -20V | P-Channel | 276pF @ 10V | 144m Ω @ 2.5A, 4.5V | 1V @ 250μA | 3.7A Tc | 6.8nC @ 5V | Schottky Diode (Isolated) | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9214TRPBF | Vishay Siliconix | $1.37 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9214trpbf-datasheets-8548.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.507mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | 3Ohm | 3 | No | 1 | Single | 50W | 1 | 150°C | DPAK | 220pF | 11 ns | 14ns | 17 ns | 20 ns | -2.7A | 20V | 250V | -4V | 50W Tc | 3Ohm | -250V | P-Channel | 220pF @ 25V | 3Ohm @ 1.7A, 10V | 4V @ 250μA | 2.7A Tc | 14nC @ 10V | 3 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD45P04-16P-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud45p0416pge3-datasheets-2151.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 13 Weeks | 3 | EAR99 | No | GULL WING | 4 | 1 | Single | 2.1W | 1 | Other Transistors | R-PSSO-G2 | 10 ns | 20ns | 20 ns | 42 ns | 36A | 20V | SILICON | DRAIN | SWITCHING | 40V | 40V | 2.1W Ta 41.7W Tc | P-Channel | 2765pF @ 20V | 16.2m Ω @ 14A, 20V | 2.5V @ 250μA | 36A Tc | 100nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1411DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si1411dht1ge3-datasheets-0719.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 14 Weeks | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 30 | 1 | Other Transistors | Not Qualified | R-PDSO-G6 | 420mA | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 150V | 150V | 1W Ta | 0.42A | 2.7Ohm | P-Channel | 2.6 Ω @ 500mA, 10V | 4.5V @ 100μA | 420mA Ta | 6.3nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5446DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5442dut1ge3-datasheets-8289.pdf | PowerPAK® ChipFET™ Single | PowerPAK® ChipFet Single | 30V | 31W Tc | N-Channel | 1610pF @ 15V | 6.4mOhm @ 10A, 10V | 2.5V @ 250μA | 25A Tc | 30nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7716ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si7716adnt1ge3-datasheets-2437.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 13.5mOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 30 | 3.5W | 1 | FET General Purpose Power | S-XDSO-C5 | 15 ns | 12ns | 10 ns | 14 ns | 16A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.5V | 3.5W Ta 27.7W Tc | 32A | N-Channel | 846pF @ 15V | 13.5m Ω @ 10A, 10V | 2.5V @ 250μA | 16A Tc | 23nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1869DH-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOS | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si1869dht1e3-datasheets-2519.pdf | 1.2A | 6-TSSOP, SC-88, SOT-363 | 1.1mm | Lead Free | 6 | 14 Weeks | 28.009329mg | No SVHC | 6 | On/Off | yes | EAR99 | No | 1 | e3 | Slew Rate Controlled | Matte Tin (Sn) | 1W | DUAL | GULL WING | 2.5V | SI1869 | 6 | 2 | 1W | 150°C | 1.2A | STANDARD | P-Channel | 1.8V~20V | 700mA | 1.8V | -20V | 1 | General Purpose | High Side | 1A | TRANSIENT | SOURCE | 1 | 165mOhm | 132m Ω | 1:1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2318CDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si2318cdst1ge3-datasheets-5701.pdf&product=vishaysiliconix-si2318cdst1ge3-6385854 | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 42mOhm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 3 | 1 | Single | 1.25W | 1 | 150°C | 12 ns | 8 ns | 14 ns | 4.3A | 20V | SILICON | SWITCHING | 3V | 1.25W Ta 2.1W Tc | 5.6A | 40V | N-Channel | 340pF @ 20V | 1.2 V | 42m Ω @ 4.3A, 10V | 2.5V @ 250μA | 5.6A Tc | 9nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32430DN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | Non-Inverting | ROHS3 Compliant | /files/vishaysiliconix-sip32430dnt1ge4-datasheets-2298.pdf | 10-VFDFN Exposed Pad | 15 Weeks | On/Off | EAR99 | unknown | Power Good, Slew Rate Controlled, Status Flag | 14.2W | NOT SPECIFIED | NOT SPECIFIED | P-Channel | 6V~28V | 1 | General Purpose | High Side | Current Limiting (Adjustable), Over Temperature, UVLO | 3.2A | Not Required | 99m Ω | 1:1 |
