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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Throw Configuration | Turn On Delay Time | Leakage Current | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | Number of Outputs | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Number of Inputs | Output | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| DG408LDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | BICMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg409ldqt1e3-datasheets-6643.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 500μA | 16 | 547.485991mg | 12V | 2.7V | 29Ohm | 16 | no | No | 1 | e0 | Tin/Lead (Sn/Pb) | 600mW | GULL WING | 16 | 8 | SINGLE-ENDED MULTIPLEXER | 600mW | Multiplexer or Switches | 1 | 150 ns | 150 ns | 6V | Dual, Single | 3V | 29Ohm | BREAK-BEFORE-MAKE | 95ns | 2.7V~12V ±3V~6V | 0.03A | 8:1 | 1nA | 7pF 20pF | 55ns, 25ns | 1pC | 1 Ω | -82dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD120PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfd120pbf-datasheets-9316.pdf | 100V | 1.3A | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | Lead Free | 4 | 8 Weeks | Unknown | 270mOhm | 4 | yes | EAR99 | AVALANCHE RATED | No | DUAL | 4 | Single | 1.3W | 1 | FET General Purpose Powers | 6.8 ns | 27ns | 27 ns | 18 ns | 1.3A | 20V | SILICON | DRAIN | SWITCHING | 4V | 1.3W Ta | 260 ns | 100V | N-Channel | 360pF @ 25V | 270m Ω @ 780mA, 10V | 4V @ 250μA | 1.3A Ta | 16nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG407BDN-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg406bdnt1e3-datasheets-9186.pdf | 28-LCC (J-Lead) | 12.57mm | 3.69mm | 12.57mm | 15V | 500μA | 28 | 1.182714g | 36V | 7.5V | 60Ohm | 28 | unknown | 1 | 450mW | QUAD | J BEND | 8 | DPDT | 450mW | Multiplexer or Switches | 2 | Not Qualified | 125 ns | 94 ns | 20V | 163 ns | Dual, Single | 5V | 16 | 60Ohm | BREAK-BEFORE-MAKE | 12V ±5V~20V | 0.03A | 8:1 | 500pA | 6pF 54pF | 107ns, 88ns | 11pC | 3 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR680DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sir680dpt1re3-datasheets-0103.pdf | PowerPAK® SO-8 | 1.17mm | 5 | 14 Weeks | EAR99 | S17-0173-Single | unknown | YES | DUAL | NO LEAD | NOT SPECIFIED | 1 | NOT SPECIFIED | 6.25W | 1 | 150°C | R-PDSO-N5 | 16 ns | 30 ns | 32.8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 104W Tc | 200A | 0.0029Ohm | 80 mJ | 80V | N-Channel | 5150pF @ 40V | 2.9m Ω @ 20A, 10V | 3.4V @ 250μA | 100A Tc | 81nC @ 7.5V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG412HSDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2013 | /files/vishaysiliconix-dg412hsdy-datasheets-7860.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 8 Weeks | 547.485991mg | 44V | 13V | 35Ohm | 16 | no | unknown | 4 | e0 | TIN LEAD | 600mW | GULL WING | 240 | 15V | 1.27mm | 16 | 1 | 30 | 600mW | Multiplexer or Switches | Not Qualified | 105 ns | 105 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 35Ohm | 25Ohm | 91 dB | BREAK-BEFORE-MAKE | 90ns | NO/NC | 12V ±5V~20V | 1:1 | SPST - NO | 250pA | 12pF 12pF | 105ns, 80ns | 22pC | -88dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8802DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si8802dbt2e1-datasheets-1785.pdf | 4-XFBGA | Lead Free | 4 | 30 Weeks | Unknown | 54mOhm | 4 | EAR99 | Tin | No | e3 | BOTTOM | BALL | 4 | 1 | Single | 500mW | 1 | FET General Purpose Power | 5 ns | 15ns | 7 ns | 22 ns | 3.5A | 5V | SILICON | SWITCHING | 500mW Ta | 8V | N-Channel | 350 mV | 54m Ω @ 1A, 4.5V | 700mV @ 250μA | 6.5nC @ 4.5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG411LDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 16-DIP (0.300, 7.62mm) | 4 | 280MHz | 17Ohm | 2.7V~12V ±3V~6V | 1:1 | SPST - NC | 250pA | 5pF 6pF | 19ns, 12ns | 5pC | -95dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS12DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss12dnt1ge3-datasheets-3246.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S (3.3x3.3) | 40V | 5W Ta 65.7W Tc | N-Channel | 4270pF @ 20V | 1.98mOhm @ 10A, 10V | 2.4V @ 250μA | 37.5A Ta 60A Tc | 89nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG413HSAK-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~125°C TA | Tube | 1 (Unlimited) | ROHS3 Compliant | 16-SOIC (0.154, 3.90mm Width) | 18 Weeks | 4 | 16-SOIC | 35Ohm | 12V ±5V~20V | 1:1 | SPST - NO/NC | 250pA | 12pF 12pF | 105ns, 80ns | 22pC | -88dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA52ADP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira52adpt1re3-datasheets-3700.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 40V | 4.8W Ta 48W Tc | N-Channel | 5500pF @ 20V | 1.63mOhm @ 15A, 10V | 2.4V @ 250μA | 41.6A Ta 131A Tc | 100nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2525DN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-dg2525dnt1ge4-datasheets-8524.pdf | 16-UFQFN | 16 | 19 Weeks | 4 | e4 | GOLD OVER NICKEL | YES | QUAD | NO LEAD | 260 | 3V | 5.5V | 1 | SPDT | 30 | 2 | R-XQCC-N16 | 310MHz | 500mOhm | 55 dB | 0.05Ohm | 3000ns | 70000ns | 2:2 | 1.8V~5.5V | DPDT | 1nA | 60μs, 1μs | -19pC | 50m Ω | -61dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD23N06-31L_GE3 | Vishay Siliconix | $1.31 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd23n0631lge3-datasheets-4018.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 12 Weeks | 1.437803g | Unknown | 3 | No | 1 | Single | 3W | 1 | TO-252, (D-Pak) | 845pF | 8 ns | 15ns | 25 ns | 30 ns | 23A | 20V | 60V | 2V | 37W Tc | 31mOhm | 60V | N-Channel | 845pF @ 25V | 31mOhm @ 15A, 10V | 2.5V @ 250μA | 23A Tc | 24nC @ 10V | 31 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG4051EEN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 0.8mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg4053eeqt1ge3-datasheets-7535.pdf | 16-WFQFN | 2.6mm | 16 | 16 Weeks | 78Ohm | unknown | 1 | YES | QUAD | NO LEAD | NOT SPECIFIED | 5V | 0.4mm | 8 | SINGLE-ENDED MULTIPLEXER | NOT SPECIFIED | 1 | 308MHz | -5V | 78Ohm | 49 dB | 0.91Ohm | 97ns | 86ns | 3V~16V ±3V~8V | 8:1 | 1nA | 2.2pF 9.2pF | 75ns, 88ns | 0.3pC | 910m Ω | -105dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4434ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4434adyt1ge3-datasheets-4461.pdf | 8-SOIC (0.154, 3.90mm Width) | 14 Weeks | 8-SO | 250V | 2.9W Ta 6W Tc | N-Channel | 600pF @ 125V | 150mOhm @ 2.8A, 10V | 4V @ 250μA | 2.8A Ta 4.1A Tc | 16.5nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG408LEDN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg409ledyt1ge3-datasheets-1177.pdf | 16-VFQFN Exposed Pad | 3mm | 3mm | 16 | 16 Weeks | 23Ohm | 1 | e3 | PURE MATTE TIN | YES | QUAD | NO LEAD | 260 | 5V | 0.5mm | 8 | SINGLE-ENDED MULTIPLEXER | 30 | 1 | -5V | 23Ohm | 80ns | 3V~16V ±3V~8V | 8:1 | 1nA | 5.5pF 25pF | 72ns, 47ns | 11pC | 1 Ω | -98dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHJ7N65E-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihj7n65et1ge3-datasheets-4814.pdf | PowerPAK® SO-8 | 18 Weeks | No SVHC | 4 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 7.9A | 650V | 2V | 96W Tc | N-Channel | 820pF @ 100V | 598m Ω @ 3.5A, 10V | 4V @ 250μA | 7.9A Tc | 44nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG201HSDY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 10mA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg201hsdqt1e3-datasheets-3678.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 16.5V | Lead Free | 10mA | 16 | 13 Weeks | 547.485991mg | 25V | 13V | 90Ohm | 16 | yes | No | 4 | 4.5mA | e3 | Matte Tin (Sn) | 600mW | GULL WING | 260 | 15V | 1.27mm | DG201 | 16 | 1 | 40 | 600mW | Multiplexer or Switches | SPST | 60 ns | 50 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 50Ohm | 85 dB | 0.75Ohm | BREAK-BEFORE-MAKE | NC | 10.8V~16.5V ±15V | 1:1 | SPST - NC | 1nA | 5pF | 60ns, 50ns | -5pC | 1.5 Ω | -100dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS11N50ATRLP | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfs11n50atrlp-datasheets-5178.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 520mOhm | 3 | 1 | Single | TO-263AB | 1.423nF | 14 ns | 35ns | 28 ns | 32 ns | 11A | 30V | 500V | 170W Tc | 520mOhm | 500V | N-Channel | 1423pF @ 25V | 520mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 52nC @ 10V | 520 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG429DJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 20μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg428dje3-datasheets-5967.pdf | 18-DIP (0.300, 7.62mm) | 37.4mm | Lead Free | 100μA | 18 | 12 Weeks | 1.270087g | Unknown | 36V | 13V | 150Ohm | 18 | yes | No | 1 | 100μA | e3 | Matte Tin (Sn) | 470mW | 15V | DG429 | 18 | 4 | 470mW | 2 | 300 ns | 1μA | 300 ns | 22V | Multiplexer | 250 ns | Dual, Single | 7V | -15V | 8 | 100Ohm | 75 dB | 5Ohm | BREAK-BEFORE-MAKE | 12V ±15V | 0.03A | 4:1 | SP4T | 500pA | 11pF 20pF | 150ns, 150ns | 1pC | 5 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFDC20PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfdc20pbf-datasheets-5489.pdf | 600V | 320mA | 4-DIP (0.300, 7.62mm) | 6.2738mm | 3.3782mm | 5.0038mm | Lead Free | 8 Weeks | Unknown | 4.4Ohm | 4 | No | Single | 1W | 1 | 4-DIP, Hexdip, HVMDIP | 350pF | 10 ns | 23ns | 23 ns | 30 ns | 320mA | 20V | 600V | 4V | 1W Ta | 4.4Ohm | 600V | N-Channel | 350pF @ 25V | 10 V | 4.4Ohm @ 190mA, 10V | 4V @ 250μA | 320mA Ta | 18nC @ 10V | 4.4 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG419BDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg418bdqt1e3-datasheets-1717.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 20V | 1μA | 8 | 540.001716mg | 36V | 13V | 25Ohm | 8 | no | unknown | 4 | e0 | TIN LEAD | 400mW | GULL WING | 240 | 15V | 8 | 1 | 30 | 400mW | Multiplexer or Switches | 1 | Not Qualified | 89 ns | 80 ns | 22V | 15V | Dual, Single | 7V | -15V | 2 | 25Ohm | 82 dB | BREAK-BEFORE-MAKE | NO/NC | 12V ±15V | 2:1 | SPDT | 250pA | 12pF 12pF | 89ns, 80ns | 38pC | -88dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP23N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihp23n60ege3-datasheets-5906.pdf | TO-220-3 | 3 | 14 Weeks | 6.000006g | 3 | No | 1 | Single | 1 | 22 ns | 38ns | 34 ns | 66 ns | 23A | 20V | SILICON | SWITCHING | 600V | 227W Tc | TO-220AB | 650V | N-Channel | 2418pF @ 100V | 158m Ω @ 12A, 10V | 4V @ 250μA | 23A Tc | 95nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG428DN | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | 85°C | -40°C | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg428dje3-datasheets-5967.pdf | 20-LCC (J-Lead) | 9.04mm | 3.69mm | 9.04mm | 100μA | 8 Weeks | 722.005655mg | 36V | 13V | 100Ohm | 20 | 800mW | 8 | 800mW | 1 | 20-PLCC (9x9) | 300 ns | 300 ns | 22V | 250 ns | Dual, Single | 7V | 1 | 8 | 100Ohm | 100Ohm | 12V ±15V | 8:1 | 500pA | 11pF 40pF | 150ns, 150ns | 1pC | 5Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF22N60E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sihf22n60ee3-datasheets-6204.pdf | TO-220-3 Full Pack | 10.63mm | 16.12mm | 4.83mm | Lead Free | Unknown | 180mOhm | 3 | No | 227W | Single | 227W | 1 | TO-220 Full Pack | 1.92nF | 18 ns | 68ns | 54 ns | 59 ns | 21A | 20V | 600V | 2V | 180mOhm | 600V | N-Channel | 1920pF @ 100V | 180mOhm @ 11A, 10V | 4V @ 250μA | 21A Tc | 86nC @ 10V | 180 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG441LAK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | BICMOS | 5.08mm | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg441ldy-datasheets-2707.pdf | 16-CDIP (0.300, 7.62mm) | 19.305mm | 16 | 12V | 2.7V | 30Ohm | 16 | no | ALSO OPERATES WITH 2.7V TO 12V SINGLE SUPPLY | unknown | 4 | NO | DUAL | NOT SPECIFIED | 5V | 16 | 1 | NOT SPECIFIED | Multiplexer or Switches | 4 | Not Qualified | 280MHz | 6V | 3V | -5V | SEPARATE OUTPUT | 30Ohm | 68 dB | 0.1Ohm | BREAK-BEFORE-MAKE | 55ns | 83ns | NC | 2.7V~12V ±3V~6V | 1:1 | SPST - NC | 1nA | 5pF 6pF | 60ns, 35ns | 5pC | 100m Ω | -95dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP21N80AE-GE3 | Vishay Siliconix | $4.13 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp21n80aege3-datasheets-6479.pdf | TO-220-3 | 14 Weeks | TO-220AB | 800V | 32W Tc | N-Channel | 1388pF @ 100V | 235mOhm @ 11A, 10V | 4V @ 250μA | 17.4A Tc | 72nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9263DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg9263dy-datasheets-2747.pdf | 8-SOIC (0.154, 3.90mm Width) | no | unknown | 8 | 2 | 60Ohm | 1:1 | 2.7V~12V | SPST - NO | 100pA | 7pF | 75ns, 50ns | 2pC | 400m Ω | -90dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP120N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp120n60ege3-datasheets-6775.pdf | TO-220-3 | 14 Weeks | TO-220AB | 600V | 179W Tc | N-Channel | 1562pF @ 100V | 120mOhm @ 12A, 10V | 5V @ 250μA | 25A Tc | 45nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM184BEC01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR210PBF | Vishay Siliconix | $1.95 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr210trrpbf-datasheets-3671.pdf | 200V | 2.6A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 1.5Ohm | 3 | No | 1 | Single | 25W | 1 | D-Pak | 140pF | 8.2 ns | 17ns | 8.9 ns | 14 ns | 2.6A | 20V | 200V | 4V | 2.5W Ta 25W Tc | 310 ns | 1.5Ohm | 200V | N-Channel | 140pF @ 25V | 1.5Ohm @ 1.6A, 10V | 4V @ 250μA | 2.6A Tc | 8.2nC @ 10V | 1.5 Ω | 10V | ±20V |
