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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIA975DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia975djt1ge3-datasheets-5566.pdf | PowerPAK® SC-70-6 Dual | Lead Free | 6 | 14 Weeks | 28.009329mg | Unknown | 41mOhm | 6 | EAR99 | Tin | No | 7.8W | SIA975 | 6 | Dual | 1.9W | 2 | Other Transistors | 22 ns | 22ns | 15 ns | 32 ns | 4.5A | 8V | SILICON | DRAIN | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | -400mV | -12V | 2 P-Channel (Dual) | 1500pF @ 6V | 41m Ω @ 4.3A, 4.5V | 1V @ 250μA | 26nC @ 8V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| SI7440DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7440dpt1ge3-datasheets-6684.pdf | PowerPAK® SO-8 | Lead Free | 5 | 6.5mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 30 | 1.9W | 1 | FET General Purpose Power | R-XDSO-C5 | 18 ns | 16ns | 16 ns | 75 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 1.9W Ta | 60A | 30V | N-Channel | 6.5m Ω @ 21A, 10V | 3V @ 250μA | 12A Ta | 35nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SQJB70EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sqjb70ept1ge3-datasheets-7304.pdf | PowerPAK® SO-8 Dual | 1.267mm | 12 Weeks | 2 | 27W | 175°C | PowerPAK® SO-8 Dual | 9 ns | 13 ns | 11.3A | 20V | 100V | 27W Tc | 78mOhm | 100V | 2 N-Channel (Dual) | 220pF @ 25V | 95mOhm @ 4A, 10V | 3.5V @ 250μA | 11.3A Tc | 7nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7447ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7447adpt1e3-datasheets-6636.pdf | PowerPAK® 1212-8 | 5 | 8 | No | DUAL | C BEND | Single | 5.4W | 1 | R-PDSO-C5 | 20 ns | 25ns | 98 ns | 82 ns | 21.5A | 25V | SILICON | DRAIN | SWITCHING | 5.4W Ta 83.3W Tc | 35A | 60A | 0.0065Ohm | 30V | P-Channel | 4650pF @ 15V | 6.5m Ω @ 24A, 10V | 3V @ 250μA | 35A Tc | 150nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI7900AEDN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7900aednt1e3-datasheets-8896.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.5W | C BEND | 260 | SI7900 | 8 | Dual | 40 | 1.5W | 2 | FET General Purpose Power | S-XDSO-C5 | 850 ns | 1.3μs | 1.3 μs | 8.6 μs | 8.5A | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 6A | 30A | 20V | 2 N-Channel (Dual) Common Drain | 26m Ω @ 8.5A, 4.5V | 900mV @ 250μA | 6A | 16nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SI4104DY-T1-GE3 | Vishay Siliconix | $0.30 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4104dyt1e3-datasheets-6191.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | Unknown | 8 | EAR99 | No | DUAL | GULL WING | 8 | Single | 5W | 1 | 9 ns | 9ns | 8 ns | 10 ns | 3.2A | 20V | SILICON | SWITCHING | 2.5V | 2.5W Ta 5W Tc | 4.6A | 4 mJ | 100V | N-Channel | 446pF @ 50V | 105m Ω @ 5A, 10V | 4.5V @ 250μA | 4.6A Tc | 13nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SQ1912AEEH-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2016 | /files/vishaysiliconix-sq1912aeeht1ge3-datasheets-9964.pdf | PowerPAK® SC-70-6 Dual | 12 Weeks | 6 | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 66 ns | 108ns | 390 ns | 715 ns | 800mA | 12V | 20V | 1.5W | 2 N-Channel (Dual) | 27pF @ 10V | 280m Ω @ 1.2A, 4.5V | 1.5V @ 250μA | 800mA Tc | 1.25nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4829DY-T1-GE3 | Vishay Siliconix | $0.10 |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4829dyt1e3-datasheets-6923.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 30 | 1 | Not Qualified | 2A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 2W Ta 3.1W Tc | 2A | 0.215Ohm | P-Channel | 210pF @ 10V | 215m Ω @ 2.5A, 4.5V | 1.5V @ 250μA | 2A Tc | 8nC @ 10V | Schottky Diode (Isolated) | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||
| SISF00DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sisf00dnt1ge3-datasheets-0434.pdf | PowerPAK® 1212-8SCD | 14 Weeks | PowerPAK® 1212-8SCD | 30V | 69.4W Tc | 2 N-Channel (Dual) Common Drain | 2700pF @ 15V | 5mOhm @ 10A, 10V | 2.1V @ 250μA | 60A Tc | 53nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8451DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si8451dbt2e1-datasheets-2412.pdf | 6-UFBGA | 6 | 80mOhm | yes | EAR99 | e3 | PURE MATTE TIN | BOTTOM | BALL | 260 | 8 | 30 | 2.77W | 1 | Other Transistors | Not Qualified | R-PBGA-B6 | 30ns | 30 ns | 45 ns | -10.8A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 2.77W Ta 13W Tc | 5A | 15A | -20V | P-Channel | 750pF @ 10V | 80m Ω @ 1A, 4.5V | 1V @ 250μA | 10.8A Tc | 24nC @ 8V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||
| SI5935CDC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si5935cdct1e3-datasheets-1877.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | Lead Free | 8 | 14 Weeks | 84.99187mg | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 3.1W | C BEND | 260 | SI5935 | 8 | Dual | 30 | 1.3W | 2 | Other Transistors | 10 ns | 32ns | 32 ns | 25 ns | 3.1A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 4A | 0.1Ohm | -20V | 2 P-Channel (Dual) | 455pF @ 10V | 100m Ω @ 3.1A, 4.5V | 1V @ 250μA | 4A | 11nC @ 5V | Standard | ||||||||||||||||||||||||||||||||||||
| SIE848DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sie848dft1ge3-datasheets-2513.pdf | 10-PolarPAK® (L) | 4 | Unknown | 10 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 10 | Single | 30 | 125W | 1 | FET General Purpose Power | R-PDSO-N4 | 45 ns | 30ns | 40 ns | 70 ns | 43A | 20V | SILICON | DRAIN SOURCE | SWITCHING | 1.8V | 5.2W Ta 125W Tc | 0.0022Ohm | 30V | N-Channel | 6100pF @ 15V | 1.8 V | 1.6m Ω @ 25A, 10V | 2.5V @ 250μA | 60A Tc | 138nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SISB46DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sisb46dnt1ge3-datasheets-4121.pdf | PowerPAK® 1212-8 Dual | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 40V | 23W | 2 N-Channel (Dual) | 1100pF @ 20V | 11.71m Ω @ 5A, 10V | 2.2V @ 250μA | 34A Tc | 11nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8417DB-T2-E1 | Vishay Siliconix | $0.89 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8417dbt2e1-datasheets-3142.pdf | 6-MICRO FOOT®CSP | 6 | No | 2.9W | 6-Micro Foot™ (1.5x1) | 2.22nF | 14 ns | 25ns | 240 ns | 380 ns | -14.5A | 8V | 12V | 2.9W Ta 6.57W Tc | 21mOhm | -12V | P-Channel | 2220pF @ 6V | 21mOhm @ 1A, 4.5V | 900mV @ 250μA | 14.5A Tc | 57nC @ 5V | 21 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3552DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3552dvt1e3-datasheets-4526.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 14 Weeks | 19.986414mg | Unknown | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.15W | DUAL | GULL WING | 260 | SI3552 | 6 | 2 | 30 | 1.15W | 1 | Other Transistors | 2.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | N-CHANNEL AND P-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 1V | 0.105Ohm | 30V | N and P-Channel | 1 V | 105m Ω @ 2.5A, 10V | 1V @ 250μA (Min) | 3.2nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| SI7682DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7682dpt1e3-datasheets-6650.pdf | PowerPAK® SO-8 | 5 | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | Single | 40 | 1 | FET General Purpose Power | R-XDSO-C5 | 18 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 5W Ta 27.5W Tc | 17.5A | 50A | 0.009Ohm | 30V | N-Channel | 1595pF @ 15V | 9m Ω @ 20A, 10V | 2.5V @ 250μA | 20A Tc | 38nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SI1035X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1035xt1ge3-datasheets-6271.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 6 | 14 Weeks | 32.006612mg | 8Ohm | 6 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 250mW | DUAL | FLAT | 260 | SI1035 | 6 | 30 | 250mW | 2 | Other Transistors | 180mA | 5V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 0.18A | 20V | N and P-Channel | 5 Ω @ 200mA, 4.5V | 400mV @ 250μA (Min) | 180mA 145mA | 0.75nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| SUD25N04-25-T4-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud25n0425e3-datasheets-3228.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 25A | 40V | 3W Ta 33W Tc | N-Channel | 510pF @ 25V | 25m Ω @ 25A, 10V | 3V @ 250μA | 25A Tc | 20nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7540ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si7540adpt1ge3-datasheets-7127.pdf | PowerPAK® SO-8 Dual | 6 | 14 Weeks | EAR99 | YES | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 3.5W | 8A | 35A | 0.015Ohm | N and P-Channel | 1310pF @ 10V | 28m Ω @ 12A, 10V | 1.4V @ 250μA | 12A 9A | 48nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50N03-12P-E3 | Vishay Siliconix | $2.88 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n0312pe3-datasheets-3274.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 3 | No | Single | 46.8mW | 1 | TO-252, (D-Pak) | 1.6nF | 9 ns | 15ns | 12 ns | 20 ns | 17.5A | 20V | 30V | 3V | 6.5W Ta 46.8W Tc | 12mOhm | N-Channel | 1600pF @ 25V | 12mOhm @ 20A, 10V | 3V @ 250μA | 42nC @ 10V | 12 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM110P08-11L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sum110p0811le3-datasheets-0300.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 5.08mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.437803g | No SVHC | 11.1mOhm | 3 | yes | EAR99 | Tin | No | e3 | GULL WING | 4 | 1 | Single | 13.6W | 1 | Other Transistors | 175°C | R-PSSO-G2 | 20 ns | 330ns | 550 ns | 135 ns | -11A | 20V | SILICON | DRAIN | SWITCHING | 80V | -3V | 13.6W Ta 375W Tc | -80V | P-Channel | 10850pF @ 40V | -3 V | 11.2m Ω @ 20A, 10V | 3V @ 250μA | 110A Tc | 270nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SUM70N04-07L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum70n0407le3-datasheets-3318.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | 2 | 1.437803g | 3 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | NOT SPECIFIED | 4 | 1 | Single | NOT SPECIFIED | 3.75W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 11 ns | 20ns | 15 ns | 40 ns | 70A | 20V | SILICON | SWITCHING | 3.75W Ta 100W Tc | 0.0074Ohm | 40V | N-Channel | 2800pF @ 25V | 7.4m Ω @ 30A, 10V | 3V @ 250μA | 70A Tc | 75nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SI4900DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4900dyt1e3-datasheets-5430.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 186.993455mg | Unknown | 8 | EAR99 | No | e3 | PURE MATTE TIN | 2W | GULL WING | 260 | SI4900 | 8 | 2 | Dual | 30 | 2W | 2 | 15 ns | 65ns | 10 ns | 15 ns | 5.3A | 20V | SILICON | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 2.5V | 3.1W | 2 N-Channel (Dual) | 665pF @ 15V | 58m Ω @ 4.3A, 10V | 3V @ 250μA | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SUP90N08-7M7P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup90n087m7pe3-datasheets-3459.pdf | TO-220-3 | 3 | 3 | EAR99 | No | 3 | Single | 3.75W | 1 | FET General Purpose Powers | 17 ns | 5ns | 6 ns | 22 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 3.75W Ta 208.3W Tc | TO-220AB | 0.0077Ohm | 75V | N-Channel | 4250pF @ 30V | 7.7m Ω @ 20A, 10V | 4.5V @ 250μA | 90A Tc | 105nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ960EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sqj960ept1ge3-datasheets-5136.pdf | PowerPAK® SO-8 Dual | Lead Free | 12 Weeks | 506.605978mg | Unknown | 40mOhm | 8 | No | 34W | 2 | Dual | 34W | 1 | PowerPAK® SO-8 Dual | 735pF | 6 ns | 8ns | 7 ns | 19 ns | 8A | 20V | 60V | 2V | 34W | 30mOhm | 2 N-Channel (Dual) | 735pF @ 25V | 36mOhm @ 5.3A, 10V | 2.5V @ 250μA | 8A | 20nC @ 10V | Logic Level Gate | 36 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||
| TP0202K-T1-GE3 | Vishay Siliconix | $0.03 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-tp0202kt1e3-datasheets-6401.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | Unknown | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 3 | Single | 350mW | 1 | Other Transistors | 9 ns | 6ns | 20 ns | 30 ns | -385mA | 20V | SILICON | SWITCHING | 30V | -2V | 350mW Ta | P-Channel | 31pF @ 15V | -2 V | 1.4 Ω @ 500mA, 10V | 3V @ 250μA | 385mA Ta | 1nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SI2319CDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si2319cdst1ge3-datasheets-7326.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 77mOhm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.25W | 1 | Other Transistors | 150°C | 40 ns | 18 ns | -4.4A | 20V | SILICON | SWITCHING | 40V | -2.5V | 1.25W Ta 2.5W Tc | -40V | P-Channel | 595pF @ 20V | -1.2 V | 77m Ω @ 3.1A, 10V | 2.5V @ 250μA | 4.4A Tc | 21nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SUP75N03-04-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sup75n0304e3-datasheets-3010.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 3 | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | Single | 187W | 1 | FET General Purpose Power | 20 ns | 40ns | 95 ns | 190 ns | 75A | 20V | SILICON | DRAIN | 3.7W Ta 187W Tc | TO-220AB | 250A | 0.006Ohm | 280 mJ | 30V | N-Channel | 10742pF @ 25V | 4m Ω @ 75A, 10V | 3V @ 250μA | 75A Tc | 250nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SI4435DDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4435ddyt1ge3-datasheets-8870.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 24MOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.5W | 1 | 150°C | 10 ns | 35ns | 16 ns | 45 ns | -8.1A | 20V | SILICON | SWITCHING | 30V | -3V | 2.5W Ta 5W Tc | -30V | P-Channel | 1350pF @ 15V | 24m Ω @ 9.1A, 10V | 3V @ 250μA | 11.4A Tc | 50nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SUP40N10-30-E3 | Vishay Siliconix | $0.24 |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup40n1030e3-datasheets-3260.pdf | TO-220-3 | Lead Free | 3 | 30mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | Single | 3.75W | 1 | FET General Purpose Power | 11 ns | 12ns | 12 ns | 30 ns | 40A | 20V | SILICON | SWITCHING | 3.75W Ta 107W Tc | TO-220AB | 75A | 100V | N-Channel | 2400pF @ 25V | 30m Ω @ 15A, 10V | 4V @ 250μA | 40A Tc | 60nC @ 10V | 6V 10V | ±20V |
