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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Input Type | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Interface | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Max Frequency | Nominal Input Voltage | Reach Compliance Code | Number of Functions | Voltage - Input (Max) | Nominal Supply Current | JESD-609 Code | Feature | Terminal Finish | Polarity | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Max Output Current | Output Power | Output Voltage | Output Current | Output Type | Throw Configuration | Voltage - Load | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Supply Type | Function | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Max Output Power | High Level Output Current | Threshold Voltage | Switch Type | Output Configuration | Fault Protection | Current - Output (Max) | Power - Max | Input Voltage-Nom | Power Dissipation-Max | Output Current per Channel | Topology | Synchronous Rectifier | Max Duty Cycle | Clock Sync | Number of Inputs | Efficiency | Control Mode | Switcher Configuration | Voltage - Output (Max) | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Feedback Cap-Max (Crss) | Voltage - Input (Min) | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Control Features | Current - Output | Voltage - Output (Min/Fixed) | Drain to Source Breakdown Voltage | Voltage - Supply (Vcc/Vdd) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Typ) | Ratio - Input:Output | Frequency - Switching | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Duty Cycle (Max) | Output Phases | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| SMM2348ES-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-smm2348est1ge3-datasheets-3544.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 25 Weeks | EAR99 | unknown | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | 30V | 30V | 3W Tc | 8A | 0.024Ohm | 50 pF | N-Channel | 540pF @ 15V | 24m Ω @ 12A, 10V | 2.5V @ 250μA | 8A Tc | 14.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4425BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4425bdyt1e3-datasheets-2582.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 12mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 20 | 1.5W | 1 | Other Transistors | 15 ns | 13ns | 13 ns | 100 ns | -11.4A | 20V | SILICON | SWITCHING | 30V | -400mV | 1.5W Ta | -30V | P-Channel | -400 mV | 12m Ω @ 11.4A, 10V | 3V @ 250μA | 8.8A Ta | 100nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP22N60AEL-GE3 | Vishay Siliconix | $3.41 |
Min: 1 Mult: 1 |
download | EL | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp22n60aelge3-datasheets-5280.pdf | TO-220-3 | TO-220AB | 600V | 208W Tc | N-Channel | 1757pF @ 100V | 180mOhm @ 11A, 10V | 4V @ 250μA | 21A Tc | 82nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2356DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si2356dst1ge3-datasheets-5405.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 3 | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | Single | 30 | 960mW | 1 | 150°C | 6 ns | 52ns | 53 ns | 13 ns | 3.2A | 12V | SILICON | SWITCHING | 1.5V | 960mW Ta 1.7W Tc | 40V | N-Channel | 370pF @ 20V | 51m Ω @ 3.2A, 10V | 1.5V @ 250μA | 4.3A Tc | 13nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32414DNP-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-Inverting | 0.6mm | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sip32416dnpt1ge4-datasheets-6370.pdf | 8-UFDFN Exposed Pad | Lead Free | 8 | 14 Weeks | 50.008559mg | Unknown | 62mOhm | 8 | On/Off | EAR99 | No | 5.5V | 1 | Load Discharge, Slew Rate Controlled | 580mW | DUAL | 0.5mm | SIP32414 | 8 | DUAL SWITCHING CONTROLLER | 580mW | 3A | 5V | 2A | N-Channel | 1.1V~5.5V | 210 μs | 1 μs | 2 | General Purpose | High Side | Reverse Current | 5V | 2.4A | Not Required | 62m Ω | 1:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2312BDS-T1-GE3 | Vishay Siliconix | $0.45 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2312bdst1e3-datasheets-6507.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 31mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | FET General Purpose Power | 9 ns | 30ns | 30 ns | 35 ns | 5A | 8V | 20V | SILICON | SWITCHING | 8V | 750mW Ta | 20V | N-Channel | 8 V | 31m Ω @ 5A, 4.5V | 850mV @ 250μA | 3.9A Ta | 12nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32460DB-T2-GE1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | Non-Inverting | RoHS Compliant | /files/vishaysiliconix-sip32462dbt2ge1-datasheets-3105.pdf | 4-UFBGA, CSPBGA | 20 Weeks | 150mOhm | 4 | On/Off | unknown | Slew Rate Controlled | 300mW | SPST | N-Channel | 1.2V~5.5V | 130 μs | 2 μs | 1 | General Purpose | High Side | Reverse Current | 1.2A | Not Required | 50m Ω | 1:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3456DDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3456ddvt1ge3-datasheets-0664.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 14 Weeks | 19.986414mg | No SVHC | 40mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1.7W | 1 | FET General Purpose Power | 12 ns | 13ns | 13 ns | 16 ns | 5A | 20V | SILICON | SWITCHING | 1.2V | 1.7W Ta 2.7W Tc | 5A | 30V | N-Channel | 325pF @ 15V | 40m Ω @ 5A, 10V | 3V @ 250μA | 6.3A Tc | 9nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32408DNP-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-Inverting | 0.6mm | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sip32409dnpt1ge4-datasheets-0144.pdf | 4-UFDFN Exposed Pad | Lead Free | 4 | 16 Weeks | 50.008559mg | Unknown | 52mOhm | 4 | On/Off | 5.5V | 1 | Slew Rate Controlled | 735mW | DUAL | NO LEAD | NOT SPECIFIED | 1.2V | 0.5mm | 1 | AUDIO/VIDEO SWITCH | NOT SPECIFIED | 735mW | 3.5A | 3.5A | N-Channel | 1.1V~5.5V | 1.8 ms | 1 μs | 1 | General Purpose | High Side | Reverse Current | 3800000ns | Not Required | 44m Ω | 1:1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISF02DN-T1-GE3 | Vishay Siliconix | $1.38 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sisf02dnt1ge3-datasheets-1923.pdf | PowerPAK® 1212-8SCD | 14 Weeks | PowerPAK® 1212-8SCD | 25V | 5.2W Ta 69.4W Tc | 2 N-Channel (Dual) Common Drain | 2650pF @ 10V | 3.5mOhm @ 7A, 10V | 2.3V @ 250μA | 30.5A Ta 60A Tc | 56nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3865CDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si3865cdvt1ge3-datasheets-0081.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | On/Off | No | Slew Rate Controlled | 830mW | SI3865 | Dual | 830mW | 6-TSOP | 1A | P-Channel | 1.8V~12V | 2.8A | 8V | 1 | General Purpose | High Side | 2.8A | 60mOhm | 50mOhm | 1:1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1023X-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1023xt1ge3-datasheets-3425.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 8.193012mg | Unknown | 1.2Ohm | 6 | 250mW | SI1023 | 2 | Dual | 250mW | 2 | SC-89-6 | 14ns | 46 ns | -350mA | 6V | 20V | 250mW | 2.7Ohm | -20V | 2 P-Channel (Dual) | -450 mV | 1.2Ohm @ 350mA, 4.5V | 450mV @ 250μA (Min) | 370mA | 1.5nC @ 4.5V | Logic Level Gate | 1.2 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32411DNP-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | Non-Inverting | 0.6mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sip32411drt1ge3-datasheets-9261.pdf | 4-UFDFN Exposed Pad | 4 | 16 Weeks | 50.008559mg | 76mOhm | 4 | On/Off | yes | No | 5.5V | 1 | Load Discharge, Slew Rate Controlled | 324mW | DUAL | 260 | 5V | 0.5mm | SIP32411 | 4 | 1 | SPST | 40 | 324mW | 2A | 2A | N-Channel | 1.1V~5.5V | 210 μs | 1 μs | 1 | General Purpose | High Side | Reverse Current | 220000ns | Not Required | 62m Ω | 1:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1912EDH-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si1912edht1e3-datasheets-4349.pdf | 6-TSSOP, SC-88, SOT-363 | 2.05mm | 900μm | 1.25mm | Lead Free | 6 | No SVHC | 280mOhm | 6 | yes | EAR99 | ESD PROTECTION | No | e3 | Matte Tin (Sn) | 570mW | GULL WING | 260 | SI1912 | 6 | Dual | 30 | 570mW | 2 | FET General Purpose Powers | 45 ns | 85ns | 85 ns | 350 ns | 1.28A | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 450mV | 1.13A | 20V | 2 N-Channel (Dual) | 450 mV | 280m Ω @ 1.13A, 4.5V | 450mV @ 100μA (Min) | 1.13A | 1nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIC438AED-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sic438aedt1ge3-datasheets-3237.pdf | 24-PowerWFQFN | 12 Weeks | 28V | PowerPAK® MLP44-24 | 20V | Adjustable | Step-Down | 1 | Positive | Buck | Yes | 20V | 3V | 8A | 0.6V | 300kHz~1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4567DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si4567dyt1e3-datasheets-4470.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | No SVHC | 60mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.95W | GULL WING | 260 | SI4567 | 8 | Dual | 40 | 2.75W | 2 | Other Transistors | 93ns | 93 ns | 19 ns | 3.6A | 16V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 2.2V | 2.75W 2.95W | 4.1A | 40V | N and P-Channel | 355pF @ 20V | 2.2 V | 60m Ω @ 4.1A, 10V | 2.2V @ 250μA | 5A 4.4A | 12nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP12504DMP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | PowerPAK® MLP33-6 | 14 Weeks | SIP12504 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4973DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4973dyt1e3-datasheets-4561.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.5494mm | 3.9878mm | Lead Free | 8 | Unknown | 23mOhm | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | 1.1W | GULL WING | 260 | SI4973 | 8 | Dual | 40 | 1.1W | 2 | Other Transistors | Not Qualified | 10 ns | 15ns | 90 ns | 115 ns | 7.6A | 25V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 30V | 2 P-Channel (Dual) | -3 V | 23m Ω @ 7.6A, 10V | 3V @ 250μA | 5.8A | 56nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9102DN02-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BCDMOS | 4.57mm | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si9102dn02t1e3-datasheets-5233.pdf | 20-LCC (J-Lead) | 8.9662mm | 8.9662mm | 13.5V | Lead Free | 20 | 722.005655mg | 20 | yes | EAR99 | 120V | e3 | Matte Tin (Sn) | QUAD | J BEND | 250 | SI9102 | SWITCHING REGULATOR | 40 | Switching Regulator or Controllers | 3W | 4V | 150μA | Fixed | Step-Up/Step-Down | 1 | 3W | Positive, Isolation Capable | 10V | Flyback, Forward Converter | No | 80 % | CURRENT-MODE | SINGLE | 10V | 40kHz~1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5513DC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si5513dct1e3-datasheets-4604.pdf | 8-SMD, Flat Lead | 3.0988mm | 1.0922mm | 1.7018mm | Lead Free | No SVHC | 155mOhm | 8 | No | 1.1W | SI5513 | Dual | 1.1W | 2 | 1206-8 ChipFET™ | 13 ns | 35ns | 35 ns | 25 ns | 4.2A | 12V | 20V | 20V | 1.5V | 1.1W | 130mOhm | 20V | N and P-Channel | 1.5 V | 75mOhm @ 3.1A, 4.5V | 1.5V @ 250μA | 3.1A 2.1A | 6nC @ 4.5V | Logic Level Gate | 75 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9145BY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -25°C~85°C TA | Bulk | 1 (Unlimited) | 85°C | -25°C | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si9145bqt1e3-datasheets-9816.pdf | 16-SOIC (0.154, 3.90mm Width) | 665.986997mg | 7V | 16 | No | 2MHz | SI9145 | 16-SOIC | 2.6V | 200mA | Transistor Driver | Step-Up/Step-Down | 1 | Positive | Buck, Boost | Yes | 100 % | No | Enable, Frequency Control, Soft Start | 2.7V~7V | 2kHz~2MHz | 100% | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7214DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-si7214dnt1e3-datasheets-4713.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | Unknown | 40mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.3W | C BEND | 260 | SI7214 | 8 | Dual | 30 | 1.3W | 2 | FET General Purpose Powers | R-XDSO-C6 | 7 ns | 10ns | 10 ns | 19 ns | 6.4A | 20V | SILICON | DRAIN | METAL-OXIDE SEMICONDUCTOR | 2.1V | 4.6A | 30V | 2 N-Channel (Dual) | 40m Ω @ 6.4A, 10V | 3V @ 250μA | 4.6A | 6.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG452EQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 5μA | ROHS3 Compliant | 2012 | /files/vishaysiliconix-dg452eqt1e3-datasheets-7713.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | Lead Free | 500nA | 16 | 15 Weeks | 172.98879mg | No SVHC | 36V | 12V | 7.3Ohm | 16 | yes | ALSO OPERATES WITH 12V SINGLE SUPPLY AND +/-15V DUAL SUPPLY | Tin | No | 4 | 500nA | e3 | Non-Inverting | 450mW | GULL WING | 260 | 5V | 0.65mm | DG452 | 16 | 1 | 40 | 450mW | Multiplexer or Switches | SPST | 118 ns | 97 ns | 22V | 15V | Dual, Single | 5V | -5V | 100mA | 4 | 5.3Ohm | 4Ohm | 0.13Ohm | BREAK-BEFORE-MAKE | 113ns | 256ns | NO | 1:1 | SPST - NO | ±5V~15V | 500pA | 31pf 34pF | 118ns, 97ns | 22pC | 120m Ω | -85dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7964DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7964dpt1e3-datasheets-4803.pdf | PowerPAK® SO-8 Dual | 6 | No SVHC | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7964 | 8 | Dual | 40 | 1.4W | 2 | FET General Purpose Power | R-XDSO-C6 | 20 ns | 15ns | 15 ns | 50 ns | 9.6A | 20V | SILICON | DRAIN | METAL-OXIDE SEMICONDUCTOR | 4.5V | 6.1A | 40A | 31 mJ | 60V | 2 N-Channel (Dual) | 23m Ω @ 9.6A, 10V | 4.5V @ 250μA | 6.1A | 65nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG271BDY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 5.5mA | ROHS3 Compliant | /files/vishaysiliconix-dg271bdye3-datasheets-5527.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | Lead Free | 7.5mA | 16 | 13 Weeks | 665.986997mg | 36V | 13V | 50Ohm | 16 | yes | No | 4 | 5.5mA | e3 | Matte Tin (Sn) | 600mW | GULL WING | 260 | 15V | 1.27mm | DG271 | 16 | 1 | 30 | 600mW | Multiplexer or Switches | SPST | 65 ns | 65 ns | 22V | 15V | Dual | 7V | -15V | 4 | 50Ohm | 85 dB | BREAK-BEFORE-MAKE | NC | 1:1 | SPST - NC | ±15V | 1nA | 8pF 8pF | 65ns, 65ns | -5pC | -100dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7905DN-T1-GE3 | Vishay Siliconix | $5.01 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7905dnt1ge3-datasheets-5421.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 15 Weeks | Unknown | 60mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2.5W | C BEND | 260 | SI7905 | 8 | 2 | Dual | 40 | 2.5W | 2 | Other Transistors | R-XDSO-C6 | 6 ns | 13ns | 10 ns | 26 ns | -6A | 20V | SILICON | DRAIN | SWITCHING | 40V | METAL-OXIDE SEMICONDUCTOR | -1V | 20.8W | 5A | -40V | 2 P-Channel (Dual) | 880pF @ 20V | 60m Ω @ 5A, 10V | 3V @ 250μA | 6A | 30nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG409LEDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 1.75mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg409ledyt1ge3-datasheets-1177.pdf | 16-SOIC (0.154, 3.90mm Width) | 9.9mm | 3.9mm | 16 | 18 Weeks | 23Ohm | 16 | 1 | e3 | PURE MATTE TIN | YES | DUAL | GULL WING | 260 | 5V | 4 | DIFFERENTIAL MULTIPLEXER | 30 | 2 | -5V | 23Ohm | 51ns | 80ns | 3V~16V ±3.3V~8V | 4:1 | SP4T | 1nA | 5.5pF 13.5pF | 72ns, 47ns | -10pC | 1 Ω | -109dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7842DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7842dpt1e3-datasheets-4743.pdf | PowerPAK® SO-8 Dual | 6 | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7842 | 8 | 40 | 1.4W | 2 | FET General Purpose Power | R-XDSO-C6 | 8 ns | 10ns | 10 ns | 21 ns | 10A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 6.3A | 30A | 0.022Ohm | 30V | 2 N-Channel (Dual) | 22m Ω @ 7.5A, 10V | 2.4V @ 250μA | 6.3A | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2723DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 2μA | 0.6mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2723dnt1e4-datasheets-7578.pdf | 10-UFQFN | 1.8mm | 3V | 10 | 14 Weeks | 4.3V | 2.6V | 8Ohm | 10 | yes | unknown | 2 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | QUAD | NO LEAD | 260 | 3V | DG2723 | 10 | 1 | 40 | 208mW | Multiplexer or Switches | 3V | Not Qualified | 700MHz | Single | 4 | 2 | 8Ohm | 30 dB | 0.8Ohm | BREAK-BEFORE-MAKE | 30ns | 2:1 | 2.6V~5.5V | SPDT | 100nA | 2.5pF | 30ns, 25ns | 3pC | 800m Ω | -36dB @ 240MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4214DDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4214ddyt1ge3-datasheets-6200.pdf | 8-SOIC (0.154, 3.90mm Width) | 14 Weeks | 19.5mOhm | 3.1W | 8-SO | 660pF | 8.5A | 30V | 3.1W | 2 N-Channel (Dual) | 660pF @ 15V | 19.5mOhm @ 8A, 10V | 2.5V @ 250μA | 8.5A | 22nC @ 10V | Logic Level Gate | 19.5 mΩ |
