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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI8445DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8445dbt2e1-datasheets-2406.pdf | 4-XFBGA, CSPBGA | 4 | 4 | yes | EAR99 | No | e3 | MATTE TIN | BOTTOM | BALL | 260 | 4 | Single | 40 | 1.8W | 1 | Other Transistors | 11 ns | 25ns | 10 ns | 37 ns | -9.8A | 5V | SILICON | SWITCHING | 20V | 1.8W Ta 11.4W Tc | 3.9A | -20V | P-Channel | 700pF @ 10V | 84m Ω @ 1A, 4.5V | 850mV @ 250μA | 9.8A Tc | 16nC @ 5V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI1029X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si1029xt1ge3-datasheets-1515.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 6 | 14 Weeks | 32.006612mg | No SVHC | 4Ohm | 6 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 250mW | FLAT | 260 | SI1029 | 6 | Dual | 40 | 250mW | 2 | Other Transistors | 150°C | 305mA | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 2.5V | 0.305A | 60V | N and P-Channel | 30pF @ 25V | 1.4 Ω @ 500mA, 10V | 2.5V @ 250μA | 305mA 190mA | 0.75nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| SI8473EDB-T1-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8473edbt1e1-datasheets-2419.pdf | 4-XFBGA, CSPBGA | 4 | Unknown | 4 | yes | EAR99 | No | Pure Matte Tin (Sn) | BOTTOM | BALL | 260 | 4 | 1 | Single | 30 | 1 | Other Transistors | -7.1A | 12V | SILICON | SWITCHING | 20V | -1.5V | 1.1W Ta 2.7W Tc | 0.055Ohm | -20V | P-Channel | 41m Ω @ 1A, 4.5V | 1.5V @ 250μA | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJB68EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | /files/vishaysiliconix-sqjb68ept1ge3-datasheets-4051.pdf | PowerPAK® SO-8 Dual | 1.267mm | 12 Weeks | 2 | 27W | 175°C | PowerPAK® SO-8 Dual | 9 ns | 15 ns | 11A | 20V | 100V | 27W | 76.5mOhm | 100V | 2 N-Channel (Dual) | 280pF @ 25V | 92mOhm @ 4A, 10V | 2.5V @ 250μA | 11A Tc | 8nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR878DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sir878dpt1ge3-datasheets-2635.pdf | PowerPAK® SO-8 | 5 | 506.605978mg | Unknown | 8 | yes | EAR99 | Tin | No | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5W | 1 | FET General Purpose Power | R-PDSO-C5 | 40A | 20V | SILICON | DRAIN | SWITCHING | 1.2V | 5W Ta 44.5W Tc | 20 mJ | 100V | N-Channel | 1250pF @ 50V | 14m Ω @ 15A, 10V | 2.8V @ 250μA | 40A Tc | 43nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI3552DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2007 | /files/vishaysiliconix-si3552dvt1e3-datasheets-4526.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | 19.986414mg | Unknown | 200mOhm | 6 | No | 1.15W | SI3552 | 2 | Single | 1.15W | 2 | 6-TSOP | 8 ns | 12ns | 7 ns | 12 ns | 51A | 20V | 30V | 1V | 1.15W | 85mOhm | 30V | N and P-Channel | 1 V | 105mOhm @ 2.5A, 10V | 1V @ 250μA (Min) | 2.5A | 3.2nC @ 5V | Logic Level Gate | 105 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9434BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si9434bdyt1e3-datasheets-6300.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | DUAL | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 2.5W | 1 | R-PDSO-G8 | 4.5A | 8V | SILICON | 1.3W Ta | MS-012AA | 0.04Ohm | 20V | P-Channel | 40m Ω @ 6.3A, 4.5V | 1.5V @ 250μA | 4.5A Ta | 18nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJQ960EL-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | /files/vishaysiliconix-sqjq960elt1ge3-datasheets-5714.pdf | PowerPAK® 8 x 8 Dual | 2.03mm | 14 Weeks | 2 | 71W | 175°C | PowerPAK® 8 x 8 Dual | 10 ns | 22 ns | 63A | 20V | 60V | 71W | 7mOhm | 60V | 2 N-Channel (Dual) | 1950pF @ 25V | 9mOhm @ 10A, 10V | 2.5V @ 250μA | 63A Tc | 24nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIJ400DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sij400dpt1ge3-datasheets-3222.pdf | PowerPAK® SO-8 | 5 | Unknown | 8 | yes | EAR99 | e3 | MATTE TIN | SINGLE | GULL WING | 260 | 8 | 40 | 69.4W | 1 | FET General Purpose Powers | Not Qualified | R-PSSO-G5 | 48 ns | 66ns | 20 ns | 49 ns | 32A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.2V | 5W Ta 69.4W Tc | 26.3A | 0.004Ohm | 30V | N-Channel | 7765pF @ 15V | 2.5 V | 4m Ω @ 20A, 10V | 2.5V @ 250μA | 32A Tc | 150nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SI7942DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7942dpt1e3-datasheets-7171.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | Lead Free | 6 | 14 Weeks | 506.605978mg | Unknown | 49mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7942 | 8 | 2 | Dual | 40 | 1.4W | 2 | FET General Purpose Powers | R-XDSO-C6 | 15 ns | 15ns | 20 ns | 35 ns | 5.9A | 20V | 100V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 100V | 2 N-Channel (Dual) | 4 V | 49m Ω @ 5.9A, 10V | 4V @ 250μA | 3.8A | 24nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SUD50N10-34P-T4-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n1034pt4e3-datasheets-3267.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 1.437803g | 1 | Single | 2.5W | 5.9A | 20V | 2.5W Ta 56W Tc | 100V | N-Channel | 1800pF @ 25V | 34m Ω @ 7A, 10V | 4V @ 250μA | 5.9A Ta 20A Tc | 30nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM45N25-58-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sum45n2558e3-datasheets-0017.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.437803g | Unknown | 58mOhm | 3 | yes | EAR99 | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 30 | 3.75W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 22 ns | 220ns | 145 ns | 40 ns | 45A | 30V | SILICON | SWITCHING | 3.75W Ta 375W Tc | 90A | 250V | N-Channel | 5000pF @ 25V | 4 V | 58m Ω @ 20A, 10V | 4V @ 250μA | 45A Tc | 140nC @ 10V | 6V 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| SUD50N03-11-E3 | Vishay Siliconix | $0.48 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n0311e3-datasheets-3308.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | Single | 30 | 7.5W | 1 | FET General Purpose Power | R-PSSO-G2 | 8 ns | 10ns | 6 ns | 18 ns | 50A | 20V | SILICON | DRAIN | 7.5W Ta 62.5W Tc | TO-252AA | 100A | 0.011Ohm | 30V | N-Channel | 1130pF @ 25V | 11m Ω @ 25A, 10V | 800mV @ 250μA (Min) | 50A Tc | 20nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SQJ940EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sqj940ept1ge3-datasheets-4787.pdf | PowerPAK® SO-8 Dual | Lead Free | 4 | 12 Weeks | Unknown | 8 | EAR99 | No | PowerPAK SO-8L Dual Asymmetric | 43W | SINGLE | GULL WING | 2 | Dual | 2 | R-PSSO-G4 | 7.7 ns | 9.5ns | 13.5 ns | 47 ns | 18A | 20V | SILICON | DRAIN | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 2V | 48W 43W | 15A | 60A | 0.016Ohm | 2 N-Channel (Dual) | 896pF @ 20V | 16m Ω @ 15A, 10V | 2.5V @ 250μA | 15A Ta 18A Tc | 20nC @ 20V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| SUV85N10-10-E3 | Vishay Siliconix | $0.85 |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-suv85n1010e3-datasheets-3398.pdf | TO-220-3 | 3 | 10.5mOhm | yes | EAR99 | unknown | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 90ns | 130 ns | 55 ns | 85A | 20V | SILICON | SWITCHING | 3.75W Ta 250W Tc | TO-262AA | 240A | 100V | N-Channel | 6550pF @ 25V | 10.5m Ω @ 30A, 10V | 3V @ 250μA | 85A Tc | 160nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SI4936ADY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2004 | /files/vishaysiliconix-si4936adyt1e3-datasheets-5150.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 14 Weeks | 506.605978mg | Unknown | 36mOhm | 8 | No | 3.12W | SI4936 | 2 | Dual | 1.1W | 2 | 8-SO | 220pF | 6 ns | 14ns | 14 ns | 30 ns | 5.9A | 20V | 30V | 1.1W | 36mOhm | 30V | 2 N-Channel (Dual) | 1 V | 36mOhm @ 5.9A, 10V | 3V @ 250μA | 4.4A | 20nC @ 10V | Logic Level Gate | 65 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||
| SQD50N04-09H-GE3 | Vishay Siliconix | $0.87 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50n0409hge3-datasheets-3988.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | Unknown | 3 | yes | EAR99 | No | 83W | GULL WING | 260 | 4 | Single | 40 | 83W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 14ns | 8 ns | 23 ns | 50A | 20V | DRAIN | 3.8V | 0.009Ohm | 76 mJ | 40V | N-Channel | 4240pF @ 25V | 3.8 V | 9m Ω @ 20A, 10V | 5V @ 250μA | 50A Tc | 76nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIRB40DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sirb40dpt1ge3-datasheets-6987.pdf | PowerPAK® SO-8 Dual | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 40V | 46.2W | 2 N-Channel (Dual) | 4290pF @ 20V | 3.25m Ω @ 10A, 10V | 2.4V @ 250μA | 40A Tc | 45nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD23N06-31L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sud23n0631lt4e3-datasheets-7979.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | 2 | 12 Weeks | 1.437803g | No SVHC | 31mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | 1 | Single | 100W | 1 | FET General Purpose Power | R-PSSO-G2 | 8 ns | 15ns | 25 ns | 30 ns | 23A | 20V | 60V | SILICON | DRAIN | SWITCHING | 2V | 3W Ta 100W Tc | 50A | 20 mJ | 60V | N-Channel | 670pF @ 25V | 2 V | 31m Ω @ 15A, 10V | 3V @ 250μA | 17nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SIA433EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia433edjt1ge3-datasheets-8627.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | Lead Free | 3 | 14 Weeks | Unknown | 15mOhm | 6 | yes | EAR99 | No | DUAL | 260 | 6 | 1 | Single | 40 | 3.5W | 1 | Other Transistors | S-XDSO-N3 | 710 ns | 1.7μs | 3.2 μs | 6 μs | -12A | 12V | SILICON | DRAIN | SWITCHING | 20V | -500mV | 3.5W Ta 19W Tc | 50A | -20V | P-Channel | 18m Ω @ 7.6A, 4.5V | 1.2V @ 250μA | 12A Tc | 75nC @ 8V | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||
| SI4412ADY-T1-E3 | Vishay Siliconix | $0.17 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4412adyt1ge3-datasheets-6274.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 24mOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.3W | 1 | 15 ns | 6ns | 6 ns | 26 ns | 5.8A | 20V | SILICON | 1.3W Ta | 30A | 30V | N-Channel | 24m Ω @ 8A, 10V | 1V @ 250μA (Min) | 5.8A Ta | 20nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI7461DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si7461dpt1e3-datasheets-0011.pdf | PowerPAK® SO-8 | 4.9mm | 1.17mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 14.5mOhm | 8 | yes | EAR99 | Tin | No | S17-0173-Single | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | Other Transistors | 150°C | R-XDSO-C5 | 20 ns | 20ns | 20 ns | 205 ns | -12.6A | 20V | SILICON | DRAIN | SWITCHING | 60V | -3V | 1.9W Ta | 60A | -60V | P-Channel | -3 V | 14.5m Ω @ 14.4A, 10V | 3V @ 250μA | 8.6A Ta | 190nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| 2N6660-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-2n6660e3-datasheets-9278.pdf | TO-205AD, TO-39-3 Metal Can | 9.4mm | 6.6mm | 8.15mm | 3 | 9 Weeks | Unknown | 3 | yes | EAR99 | LOW THRESHOLD | Tin | No | e3 | BOTTOM | WIRE | 260 | 2 | 1 | Single | 40 | 725mW | 1 | FET General Purpose Powers | 1.1A | 20V | SILICON | AMPLIFIER | 1.7V | 725mW Ta 6.25W Tc | 0.99A | 3Ohm | 60V | N-Channel | 50pF @ 25V | 1.7 V | 3 Ω @ 1A, 10V | 2V @ 1mA | 990mA Tc | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SI7450DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7450dpt1e3-datasheets-1059.pdf | 20V | 5.3A | PowerPAK® SO-8 | 4.9mm | 1.12mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 80mOhm | 8 | yes | EAR99 | Tin | No | S17-0173_SINGLE | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | FET General Purpose Power | 150°C | R-XDSO-C5 | 14 ns | 20ns | 25 ns | 32 ns | 3.2A | 20V | SILICON | DRAIN | SWITCHING | 2V | 1.9W Ta | 40A | 200V | N-Channel | 2 V | 80m Ω @ 4A, 10V | 4.5V @ 250μA | 3.2A Ta | 42nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRFD9123 | Vishay Siliconix | $0.59 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2015 | 4-DIP (0.300, 7.62mm) | Contains Lead | 3 | 639.990485mg | 4 | EAR99 | unknown | 1.3W | DUAL | 4 | 1 | Single | 1 | Not Qualified | R-PDIP-T3 | 1A | 4V | SILICON | DRAIN | 100V | TO-250AA | 0.8A | 0.8Ohm | -100V | P-Channel | 390pF @ 25V | 600m Ω @ 600mA, 10V | 4V @ 250μA | 1A Ta | 18nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7141DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si7141dpt1ge3-datasheets-0754.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 1.9mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 30 | 6.25W | 1 | Other Transistors | R-XDSO-C5 | 130 ns | 120ns | 55 ns | 100 ns | -60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | -1V | 6.25W Ta 104W Tc | -20V | P-Channel | 14300pF @ 10V | 1.9m Ω @ 25A, 10V | 2.3V @ 250μA | 60A Tc | 400nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| 2N6660JTVP02 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6660e3-datasheets-9278.pdf | TO-205AD, TO-39-3 Metal Can | 3 | 18 Weeks | 3 | EAR99 | unknown | 8541.21.00.95 | BOTTOM | WIRE | 2 | 1 | FET General Purpose Powers | 990mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | AMPLIFIER | 60V | 60V | 725mW Ta 6.25W Tc | 0.99A | 3Ohm | 10 pF | N-Channel | 50pF @ 25V | 3 Ω @ 1A, 10V | 2V @ 1mA | 990mA Tc | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7848BDP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7848bdpt1e3-datasheets-4537.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | 9mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 4.2W | 1 | FET General Purpose Powers | R-XDSO-C5 | 10 ns | 15ns | 10 ns | 30 ns | 47A | 20V | 40V | SILICON | DRAIN | SWITCHING | 4.2W Ta 36W Tc | 50A | 40V | N-Channel | 2000pF @ 20V | 1 V | 9m Ω @ 16A, 10V | 3V @ 250μA | 47A Tc | 50nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SIHW23N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihw23n60ege3-datasheets-0102.pdf | TO-247-3 | 3 | 19 Weeks | 38.000013g | 3 | No | 1 | Single | 1 | 22 ns | 38ns | 34 ns | 66 ns | 23A | 20V | SILICON | SWITCHING | 600V | 227W Tc | TO-247AD | 650V | N-Channel | 2418pF @ 100V | 158m Ω @ 12A, 10V | 4V @ 250μA | 23A Tc | 95nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4427BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4427bdyt1e3-datasheets-7261.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 10.5mOhm | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | 12 ns | 15ns | 15 ns | 242 ns | -12.6A | 12V | SILICON | 30V | -1.4V | 1.5W Ta | 9.7A | -30V | P-Channel | 10.5m Ω @ 12.6A, 10V | 1.4V @ 250μA | 9.7A Ta | 70nC @ 4.5V | 2.5V 10V | ±12V |
