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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Temperature Grade | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Supply Current-Max (Isup) | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Screening Level | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | High Level Output Current | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| IRFD420PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd420pbf-datasheets-5258.pdf | 500V | 460mA | 4-DIP (0.300, 7.62mm) | 6.2738mm | 3.3782mm | 5.0038mm | Lead Free | 8 Weeks | No SVHC | 4 | No | Single | 1W | 1 | 4-DIP, Hexdip, HVMDIP | 360pF | 8 ns | 8.6ns | 8.6 ns | 33 ns | 370mA | 20V | 500V | 4V | 1W Ta | 3Ohm | 500V | N-Channel | 360pF @ 25V | 3Ohm @ 220mA, 10V | 4V @ 250μA | 370mA Ta | 24nC @ 10V | 3 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG406BDN-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 30μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg406bdnt1e3-datasheets-9186.pdf | 28-LCC (J-Lead) | 12.57mm | 3.69mm | 12.57mm | 12V | 500μA | 28 | 12 Weeks | 1.182714g | 36V | 7.5V | 100Ohm | 28 | yes | unknown | 1 | e3 | Matte Tin (Sn) | 450mW | QUAD | J BEND | 260 | 15V | DG406 | 28 | 16 | 40 | 450mW | 1 | Not Qualified | 125 ns | 94 ns | 20V | Multiplexer | 163 ns | Dual, Single | 5V | -15V | 16 | 60Ohm | 86 dB | 3Ohm | BREAK-BEFORE-MAKE | 0.03A | 16:1 | ±5V~20V | 500pA | 6pF 108pF | 107ns, 88ns | 11pC | 3 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHH26N60E-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihh26n60et1ge3-datasheets-5628.pdf | 8-PowerTDFN | Lead Free | 4 | 14 Weeks | Unknown | 8 | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PSSO-N4 | 25A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 4V | 202W Tc | 50A | 0.135Ohm | 353 mJ | N-Channel | 2815pF @ 100V | 135m Ω @ 13A, 10V | 4V @ 250μA | 25A Tc | 116nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG417DY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2010 | /files/vishaysiliconix-dg417dyt1e3-datasheets-1245.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 1μA | 8 | 8 Weeks | 540.001716mg | 36V | 13V | 35Ohm | 8 | no | unknown | 1 | e0 | TIN LEAD | 400mW | GULL WING | 240 | 15V | 8 | 1 | 30 | 400mW | Multiplexer or Switches | Not Qualified | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | -15V | 1 | 35Ohm | BREAK-BEFORE-MAKE | 250ns | NO | 12V ±15V | 1:1 | SPST - NC | 250pA | 8pF 8pF | 175ns, 145ns | 60pC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB15N60E-GE3 | Vishay Siliconix | $4.32 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb15n60ege3-datasheets-5978.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.437803g | Unknown | 280mOhm | 3 | AVALANCHE RATED | No | GULL WING | 4 | 1 | Single | 180W | 1 | FET General Purpose Powers | R-PSSO-G2 | 17 ns | 77ns | 66 ns | 35 ns | 15A | 20V | SILICON | SWITCHING | 2V | 180W Tc | 600V | N-Channel | 1350pF @ 100V | 280m Ω @ 8A, 10V | 4V @ 250μA | 15A Tc | 78nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG509BEJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~125°C TA | Tube | 1 (Unlimited) | CMOS | 500μA | ROHS3 Compliant | 2012 | /files/vishaysiliconix-dg508bent1ge4-datasheets-3833.pdf | 16-DIP (0.300, 7.62mm) | 15V | 250MHz | Lead Free | 16 | 12 Weeks | 1.627801g | 44V | 12V | 500Ohm | 16 | yes | No | 2 | 501mW | 15V | DG509 | 16 | 8 | 0.6mA | 2 | 340 ns | 300 ns | 20V | Multiplexer | Dual | 5V | -15V | 380Ohm | 81 dB | 10Ohm | BREAK-BEFORE-MAKE | 0.03A | 4:1 | SP4T | ±5V~20V | 1nA | 3pF 8pF | 250ns, 240ns | 2pC | 10 Ω | -88dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA18N60E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha18n60ee3-datasheets-6314.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | NO | 1 | R-PSFM-T3 | SILICON | SWITCHING | 600V | 600V | 34W Tc | TO-220AB | 18A | 45A | 0.202Ohm | 204 mJ | N-Channel | 1640pF @ 100V | 202m Ω @ 9A, 10V | 4V @ 250μA | 18A Tc | 92nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG441LDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 16-DIP (0.300, 7.62mm) | 4 | 280MHz | 30Ohm | 2.7V~12V ±3V~6V | 1:1 | SPST - NC | 1nA | 5pF 6pF | 60ns, 35ns | 5pC | 100m Ω | -95dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP100N60E-GE3 | Vishay Siliconix | $3.81 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp100n60ege3-datasheets-6568.pdf | TO-220-3 | 14 Weeks | TO-220AB | 600V | 208W Tc | N-Channel | 1851pF @ 100V | 100mOhm @ 13A, 10V | 5V @ 250μA | 30A Tc | 50nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG485AZ/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg485az883-datasheets-2762.pdf | 20-LCC | 20 | 25V | 85Ohm | 20 | no | No | 8 | e0 | Tin/Lead (Sn/Pb) | YES | QUAD | 1.27mm | 20 | Multiplexer or Switches | 5+-15V | 8 | 22V | COMMON OUTPUT | 85Ohm | BREAK-BEFORE-MAKE | NO | 1:1 | SPST - NO/NC | ±15V | 1nA | 7pF 43pF | 200ns, 200ns | 17pC | 5.1 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHH180N60E-T1-GE3 | Vishay Siliconix | $4.30 |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh180n60et1ge3-datasheets-5599.pdf | 8-PowerTDFN | 14 Weeks | PowerPAK® 8 x 8 | 600V | 114W Tc | N-Channel | 1085pF @ 100V | 180mOhm @ 9.5A, 10V | 5V @ 250μA | 19A Tc | 33nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG458DJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | 85°C | -40°C | Non-RoHS Compliant | 2014 | /files/vishaysiliconix-dg458dj-datasheets-2781.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 15V | 100μA | 1.627801g | 36V | 13V | 1.5kOhm | 16 | No | 1W | 1 | 1 | 16-PDIP | 250 ns | 250 ns | 18V | 500 ns | Dual, Single | 4.5V | 1.5kOhm | 8:1 | ±4.5V~18V | 1nA | 5pF 15pF | 250ns, 250ns | 90Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLU014PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irlu014pbf-datasheets-7963.pdf | 60V | 7.7A | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Lead Free | 8 Weeks | 329.988449mg | Unknown | 200mOhm | 3 | No | 1 | Single | 2.5W | 1 | TO-251AA | 400pF | 9.3 ns | 110ns | 26 ns | 17 ns | 7.7A | 10V | 60V | 2V | 2.5W Ta 25W Tc | 200mOhm | 60V | N-Channel | 400pF @ 25V | 200mOhm @ 4.6A, 5V | 2V @ 250μA | 7.7A Tc | 8.4nC @ 5V | 200 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM187BIC01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | 2016 | Lead Free | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD70090E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sud70090ege3-datasheets-8773.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 14 Weeks | EAR99 | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 50A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 125W Tc | 120A | 0.0089Ohm | 80 mJ | N-Channel | 1950pF @ 50V | 8.9m Ω @ 20A, 10V | 4V @ 250μA | 50A Tc | 50nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG642DY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg641dy-datasheets-2728.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 15V | 500MHz | 6mA | 8 | 540.001716mg | 18V | 10V | 8Ohm | 8 | no | VIDEO APPLICATION | unknown | 1 | e0 | TIN LEAD | 300mW | DUAL | GULL WING | 240 | 15V | 8 | 1 | AUDIO/VIDEO SWITCH | 30 | 300mW | Multiplexer or Switches | Not Qualified | 100 ns | 60 ns | 15V | 12V | Single | 10V | -3V | 2 | 1 | 8Ohm | 63 dB | 0.5Ohm | BREAK-BEFORE-MAKE | NO/NC | 3V~15V ±3V~15V | 2:1 | SPDT | 10nA | 20pF 20pF | 100ns, 60ns | 40pC | 500m Ω | -85dB @ 5MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF740SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | /files/vishaysiliconix-irf740spbf-datasheets-9653.pdf | 400V | 10A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 11 Weeks | 1.437803g | Unknown | 550mOhm | 3 | No | 1 | Single | 125W | 1 | D2PAK | 1.4nF | 14 ns | 27ns | 24 ns | 50 ns | 10A | 20V | 400V | 4V | 3.1W Ta 125W Tc | 550mOhm | 400V | N-Channel | 1400pF @ 25V | 550mOhm @ 6A, 10V | 4V @ 250μA | 10A Tc | 63nC @ 10V | 550 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG506AAZ/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | 2.54mm | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-dg506aak883-datasheets-2716.pdf | 20-LCC | 28 | 400Ohm | No | 1 | e0 | TIN LEAD | YES | QUAD | 240 | 15V | 28 | 16 | SINGLE-ENDED MULTIPLEXER | 30 | 1 | S-XQCC-N28 | MIL-STD-883 | 22V | -15V | 400Ohm | 68 dB | 14.4Ohm | 16:1 | ±15V | 1nA | 6pF 45pF | 1.5μs, 1μs | 6pC | 24 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG28N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg28n60efge3-datasheets-9841.pdf | TO-247-3 | Lead Free | 3 | 21 Weeks | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSFM-T3 | 24 ns | 40ns | 39 ns | 82 ns | 28A | 20V | SILICON | DRAIN | SWITCHING | 250W Tc | TO-247AC | 75A | 600V | N-Channel | 2714pF @ 100V | 123m Ω @ 14A, 10V | 4V @ 250μA | 28A Tc | 120nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM302BCC01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | 18 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG22N60AE-GE3 | Vishay Siliconix | $3.16 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg22n60aege3-datasheets-1833.pdf | TO-247-3 | 14 Weeks | 600V | 179W Tc | N-Channel | 1451pF @ 100V | 180m Ω @ 11A, 10V | 4V @ 250μA | 20A Tc | 96nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 9204201EA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Bulk | 1 (Unlimited) | CMOS | 5.08mm | Non-RoHS Compliant | 16-CDIP (0.300, 7.62mm) | 7.62mm | 16 | 44V | 13V | 1 | 900mW | DUAL | NOT SPECIFIED | 15V | 2.54mm | 16 | 8 | SINGLE-ENDED MULTIPLEXER | NOT SPECIFIED | 1 | 20V | 5V | -15V | 30mA | 100Ohm | 75 dB | 15Ohm | 225ns | 8:1 | ±15V | 500pA | 3pF 26pF | 150ns, 150ns | 20pC | 15 Ω (Max) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB24N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb24n65ege3-datasheets-2054.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 14 Weeks | 1.437803g | Unknown | 145mOhm | 3 | Tin | No | 1 | Single | 250W | 1 | D2PAK | 2.74nF | 24 ns | 84ns | 69 ns | 70 ns | 24A | 20V | 650V | 2V | 250W Tc | 145mOhm | 650V | N-Channel | 2740pF @ 100V | 145mOhm @ 12A, 10V | 4V @ 250μA | 24A Tc | 122nC @ 10V | 145 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 9562302XA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG61N65EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg61n65efge3-datasheets-2352.pdf | TO-247-3 | 3 | 21 Weeks | NO | 1 | R-PSFM-T3 | SILICON | SWITCHING | 650V | 650V | 520W Tc | TO-247AC | 64A | 199A | 0.047Ohm | 1142 mJ | N-Channel | 7407pF @ 100V | 47m Ω @ 30.5A, 10V | 4V @ 250μA | 64A Tc | 371nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 8671602EA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | 1 (Unlimited) | 125°C | -55°C | CMOS | Non-RoHS Compliant | 2000 | CDIP | Contains Lead | 16 | 25V | 13V | 16 | 4 | DUAL | 15V | 16 | MILITARY | SPST | 900mW | Multiplexer or Switches | +-15V | Not Qualified | 22V | 7V | -15V | 4 | 75Ohm | BREAK-BEFORE-MAKE | 65ns | NC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBF20LPBF | Vishay Siliconix | $0.41 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishay-irfbf20lpbf-datasheets-9860.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 9.65mm | 4.83mm | Lead Free | 8 Weeks | 2.387001g | 8Ohm | No | 1 | Single | 3.1W | 1 | I2PAK | 490pF | 8 ns | 21ns | 32 ns | 56 ns | 1.7A | 20V | 900V | 3.1W Ta 54W Tc | 8Ohm | 900V | N-Channel | 490pF @ 25V | 8Ohm @ 1A, 10V | 4V @ 250μA | 1.7A Tc | 38nC @ 10V | 8 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM188BCC | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP25N50E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihp25n50ege3-datasheets-3910.pdf | TO-220-3 | 19.89mm | Lead Free | 3 | 14 Weeks | 6.000006g | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 250W | 1 | 150°C | R-PSFM-T3 | 19 ns | 36ns | 29 ns | 57 ns | 26A | 30V | SILICON | SWITCHING | 250W Tc | TO-220AB | 50A | 273 mJ | 500V | N-Channel | 1980pF @ 100V | 145m Ω @ 12A, 10V | 4V @ 250μA | 26A Tc | 86nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2706DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2706dnt1e4-datasheets-4510.pdf | 16-WFQFN | 2.6mm | 750μm | 1.8mm | 1μA | 16 | 57.09594mg | 4.3V | 1.65V | 5.5Ohm | 16 | yes | unknown | 4 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 525mW | QUAD | NO LEAD | 260 | 3.15V | DG2706 | 16 | 1 | 30 | 525mW | Multiplexer or Switches | 3.15V | Not Qualified | 45 ns | 35 ns | Single | 8 | 4 | 5.5Ohm | 70 dB | 0.3Ohm | BREAK-BEFORE-MAKE | 55ns | 2:1 | 1.65V~4.3V | SPDT | 5nA | 16pF | 45ns, 35ns | 3pC | 300m Ω | -90dB @ 1MHz |
