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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Screening Level | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | Number of Outputs | Threshold Voltage | Power Dissipation-Max | Recovery Time | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| IRFPG50PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfpg50pbf-datasheets-4430.pdf | 1kV | 6.1A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 2Ohm | 3 | No | 1 | Single | 190W | 1 | TO-247-3 | 2.8nF | 19 ns | 35ns | 36 ns | 130 ns | 6.1A | 20V | 1000V | 4V | 190W Tc | 950 ns | 2Ohm | 1kV | N-Channel | 2800pF @ 25V | 4 V | 2Ohm @ 3.6A, 10V | 4V @ 250μA | 6.1A Tc | 190nC @ 10V | 2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG300ABA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -25°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2016 | TO-100-10 Metal Can | 2 | TO-100-10 | 50Ohm | 1:1 | SPST - NO | ±15V | 1nA | 14pF 14pF | 300ns, 250ns | 8pC | -74dB @ 500kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8409DB-T1-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si8409dbt1e1-datasheets-5250.pdf | 4-XFBGA, CSPBGA | 1.6mm | 360μm | 1.6mm | Lead Free | 4 | 33 Weeks | 46MOhm | 4 | yes | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | BALL | 260 | 4 | 1 | 40 | 1.47W | 1 | Other Transistors | 20 ns | 35ns | 35 ns | 140 ns | -6.3A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 1.47W Ta | -30V | P-Channel | 46m Ω @ 1A, 4.5V | 1.4V @ 250μA | 4.6A Ta | 26nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG309BDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg309bdqt1-datasheets-7732.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 8 Weeks | 547.485991mg | 44V | 4V | 85Ohm | 16 | no | unknown | 4 | e0 | Tin/Lead (Sn/Pb) | YES | 640mW | GULL WING | 15V | 1.27mm | 16 | Multiplexer or Switches | +-15V | 4 | Not Qualified | 200 ns | 150 ns | 22V | Dual, Single | 4V | -15V | SEPARATE OUTPUT | 85Ohm | 100Ohm | BREAK-BEFORE-MAKE | 300ns | NC | 4V~44V ±4V~22V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 200ns, 150ns | 1pC | 1.7 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR418DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sir418dpt1ge3-datasheets-6744.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 5W | 1 | FET General Purpose Power | R-PDSO-C5 | 19 ns | 73ns | 12 ns | 32 ns | 40A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.4V | 39W Tc | 23.5A | 70A | 0.005Ohm | 45 mJ | 40V | N-Channel | 2410pF @ 20V | 2.4 V | 5m Ω @ 20A, 10V | 2.4V @ 250μA | 40A Tc | 75nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG302AAK/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg300aak883-datasheets-7683.pdf | 14-CDIP (0.300, 7.62mm) | 36V | 13V | 50Ohm | 14 | No | 2 | 825mW | 2 | 14-CERDIP | 22V | 7V | 4 | 4 | 50Ohm | 2:1 | DPST - NO | ±15V | 1nA | 14pF 14pF | 300ns, 250ns | 8pC | -74dB @ 500kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4190ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4190adyt1ge3-datasheets-8842.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 8.8MOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 1 | Single | 30 | 3W | 1 | 150°C | 12 ns | 34 ns | 13A | 20V | SILICON | SWITCHING | 1.5V | 3W Ta 6W Tc | 100V | N-Channel | 1970pF @ 50V | 1.5 V | 8.8m Ω @ 15A, 10V | 2.8V @ 250μA | 18.4A Tc | 67nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG333ALDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2007 | /files/vishaysiliconix-dg333adwe3-datasheets-5131.pdf | 20-DIP (0.300, 7.62mm) | 26.92mm | 3.81mm | 7.11mm | 1μA | 20 | 8 Weeks | 2.508989g | 40V | 5V | 45Ohm | 20 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | NO | 890mW | 2.54mm | 20 | Multiplexer or Switches | 1 | 175 ns | 145 ns | 22V | Dual, Single | 4V | SEPARATE OUTPUT | 45Ohm | 45Ohm | BREAK-BEFORE-MAKE | 5V~40V ±4V~22V | 2:1 | SPDT | 250pA | 8pF | 175ns, 145ns | 10pC | 2 Ω (Max) | -80dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD80460E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sud80460ege3-datasheets-9664.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.507mm | 2 | 14 Weeks | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 65.2W | 1 | 175°C | R-PSSO-G2 | 8 ns | 15 ns | 42A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 65.2W Tc | 40A | 0.0447Ohm | 150V | N-Channel | 560pF @ 50V | 44.7m Ω @ 8.3A, 10V | 4V @ 250μA | 42A Tc | 16nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG412AK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2005 | /files/vishaysiliconix-dg413dj-datasheets-7502.pdf | 16-CDIP (0.300, 7.62mm) | 19.56mm | 3.94mm | 7.62mm | 1μA | 16 | 15 Weeks | 36V | 13V | 35Ohm | 16 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | 900mW | 16 | 900mW | Multiplexer or Switches | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | 4 | SEPARATE OUTPUT | 35Ohm | 35Ohm | BREAK-BEFORE-MAKE | 250ns | NO | 5V~44V ±5V~20V | 1:1 | SPST - NO | 250pA | 9pF 9pF | 175ns, 145ns | 5pC | -85dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4401EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq4401eyt1ge3-datasheets-0637.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 12 Weeks | 506.605978mg | Unknown | 8 | Tin | No | 1 | Single | 1.8W | 1 | 8-SO | 4.25nF | 58 ns | 76ns | 44 ns | 67 ns | 17.3A | 20V | 40V | -2V | 7.14W Tc | 11mOhm | -40V | P-Channel | 4250pF @ 20V | -2 V | 14mOhm @ 10.5A, 10V | 2.5V @ 250μA | 17.3A Tc | 115nC @ 10V | 14 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG301AAZ/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~125°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2009 | 20-LCC | 16 Weeks | 44V | 50Ohm | 20 | No | 1 | 50Ohm | 2:1 | SPDT | ±15V | 1nA | 14pF 14pF | 300ns, 250ns | 8pC | -74dB @ 500kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS61DN-T1-GE3 | Vishay Siliconix | $0.81 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss61dnt1ge3-datasheets-3034.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S | 20V | 5W Ta 65.8W Tc | P-Channel | 8740pF @ 10V | 3.5mOhm @ 15A, 4.5V | 900mV @ 250μA | 30.9A Ta 111.9A Tc | 231nC @ 10V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG409LDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | BICMOS | Non-RoHS Compliant | 2013 | /files/vishaysiliconix-dg409ldqt1e3-datasheets-6643.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 500μA | 16 | 547.485991mg | 12V | 2.7V | 29Ohm | 16 | no | No | 1 | 10μA | e0 | Tin/Lead (Sn/Pb) | 600mW | GULL WING | 16 | 4 | DIFFERENTIAL MULTIPLEXER | 600mW | Multiplexer or Switches | 2 | 150 ns | 150 ns | 6V | Dual, Single | 3V | 8 | 29Ohm | 30Ohm | BREAK-BEFORE-MAKE | 95ns | 2V~12V ±3V~6V | 0.03A | 4:1 | SP4T | 1nA | 7pF 20pF | 55ns, 25ns | 1pC | 1 Ω | -82dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIJA52ADP-T1-GE3 | Vishay Siliconix | $1.16 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sija52adpt1ge3-datasheets-3637.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 40V | 4.8W Ta 48W Tc | N-Channel | 5500pF @ 20V | 1.63mOhm @ 15A, 10V | 2.4V @ 250μA | 41.6A Ta 131A Tc | 100nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG442DJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg442dyt1-datasheets-7418.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | Lead Free | 100μA | 16 | 10 Weeks | 1.627801g | 36V | 13V | 85Ohm | 16 | no | unknown | 4 | e0 | Tin/Lead (Sn/Pb) | NO | 450mW | 15V | 16 | Multiplexer or Switches | 4 | Not Qualified | SPST | 250 ns | 120 ns | 22V | 15V | Dual, Single | 7V | -15V | SEPARATE OUTPUT | 85Ohm | 85Ohm | BREAK-BEFORE-MAKE | NO | 12V ±15V | 1:1 | SPST - NO | 500pA | 4pF 4pF | 250ns, 210ns | -1pC | 4 Ω (Max) | -100dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQR40030ER_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | TO-252-4, DPak (3 Leads + Tab) | 14 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG613EEQ-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-dg612eent1ge4-datasheets-7435.pdf | 16-TSSOP (0.173, 4.40mm Width) | 20 Weeks | 4 | 16-TSSOP | 1GHz | 115Ohm | 3V~12V ±3V~5V | 1:1 | SPST - NO/NC | 100pA | 3pF 3pF | 50ns, 35ns | 1.4pC | 2.5Ohm | -74dB @ 10MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR626LDP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir626ldpt1re3-datasheets-4211.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 60V | 6.25W Ta 104W Tc | N-Channel | 5900pF @ 30V | 1.5mOhm @ 20A, 10V | 2.5V @ 250μA | 45.6A Ta 186A Tc | 135nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG4052EEQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg4053eeqt1ge3-datasheets-7535.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5mm | Lead Free | 16 | 20 Weeks | 78Ohm | 16 | unknown | 1 | e3 | MATTE TIN | YES | DUAL | GULL WING | NOT SPECIFIED | 5V | 0.65mm | 4 | DIFFERENTIAL MULTIPLEXER | NOT SPECIFIED | 2 | 353MHz | -5V | 78Ohm | 49 dB | 0.91Ohm | 97ns | 86ns | 3V~16V ±3V~8V | 4:1 | SP4T | 1nA | 2.2pF 4.8pF | 75ns, 88ns | 0.3pC | 910m Ω | -105dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD50N04-5M6_GE3 | Vishay Siliconix | $2.89 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50n045m6ge3-datasheets-3962.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | EAR99 | unknown | 50A | 40V | 71W Tc | N-Channel | 4000pF @ 25V | 5.6m Ω @ 20A, 10V | 3.5V @ 250μA | 50A Tc | 85nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9232EDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1.75mm | RoHS Compliant | /files/vishaysiliconix-dg9233edyge3-datasheets-1801.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 4mm | 8 | 21 Weeks | 2 | YES | DUAL | GULL WING | NOT SPECIFIED | 3V | 5.5V | 1 | NOT SPECIFIED | 2 | R-PDSO-G8 | 25Ohm | 1:1 | 2.7V~5.5V | SPST - NC | 100pA | 3.8pF | 75ns, 50ns | -0.78pC | 400m Ω | -108dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU224PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfu224pbf-datasheets-5033.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | Lead Free | 3 | 8 Weeks | 329.988449mg | 1.1Ohm | 3 | EAR99 | AVALANCHE RATED | No | 260 | 3 | 1 | Single | 40 | 1 | 7 ns | 13ns | 12 ns | 20 ns | 3.8A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 42W Tc | 250V | N-Channel | 260pF @ 25V | 1.1 Ω @ 2.3A, 10V | 4V @ 250μA | 3.8A Tc | 14nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG221BDY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 800μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg221bdyt1e3-datasheets-0185.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | 1.5mA | 16 | 13 Weeks | 547.485991mg | 18V | 13V | 90Ohm | 16 | yes | No | 4 | e3 | Matte Tin (Sn) | 600mW | GULL WING | 260 | 15V | 1.27mm | DG221 | 16 | 1 | 40 | 600mW | Multiplexer or Switches | SPST | 550 ns | 340 ns | 18V | 15V | Dual | 7V | -15V | 4 | SEPARATE OUTPUT | 90Ohm | 70 dB | BREAK-BEFORE-MAKE | NC | 1:1 | SPST - NC | ±15V | 5nA | 8pF 9pF | 550ns, 340ns | 20pC | -90dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU430APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfu430apbf-datasheets-5314.pdf | 500V | 5A | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Lead Free | 3 | 11 Weeks | 329.988449mg | Unknown | 1.7Ohm | 3 | No | e3 | MATTE TIN | 260 | 3 | 1 | Single | 40 | 110W | 1 | 8.7 ns | 27ns | 16 ns | 17 ns | 5A | 30V | SILICON | DRAIN | SWITCHING | 4.5V | 110W Tc | 5A | 20A | 500V | N-Channel | 490pF @ 25V | 1.7 Ω @ 3A, 10V | 4.5V @ 250μA | 5A Tc | 24nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG417BDY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg418bdqt1e3-datasheets-1717.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 3.9mm | 8 | no | unknown | 4 | e0 | TIN LEAD | YES | DUAL | GULL WING | 240 | 15V | 8 | 1 | 30 | Multiplexer or Switches | 1 | Not Qualified | R-PDSO-G8 | -15V | 25Ohm | 82 dB | BREAK-BEFORE-MAKE | 80ns | 89ns | NC | 12V ±15V | 1:1 | SPST - NC | 250pA | 12pF 12pF | 89ns, 80ns | 38pC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD180N60E-GE3 | Vishay Siliconix | $2.33 |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sihd180n60ege3-datasheets-5686.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | TO-252AA | 600V | 156W Tc | N-Channel | 1080pF @ 100V | 195mOhm @ 9.5A, 10V | 5V @ 250μA | 19A Tc | 32nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG419BAK-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | ROHS3 Compliant | 2016 | 8-CDIP (0.300, 7.62mm) | 7.62mm | Lead Free | 8 | 36V | 13V | 25Ohm | 8 | 1 | NO | DUAL | 15V | 2.54mm | 8 | 1 | Multiplexer or Switches | 1 | Not Qualified | 20V | 7V | -15V | SEPARATE OUTPUT | 25Ohm | 82 dB | BREAK-BEFORE-MAKE | 96ns | 96ns | NO/NC | 12V ±15V | 2:1 | SPDT | 250pA | 12pF 12pF | 89ns, 80ns | 38pC | -88dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQP120N06-3M5L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Through Hole | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqp120n063m5lge3-datasheets-5995.pdf | TO-220-3 | 12 Weeks | TO-220AB | 60V | 250W Tc | N-Channel | 14700pF @ 25V | 3.5mOhm @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 330nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG458AZ/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 20-LCC | 20 | 22V | 1.5kOhm | 20 | no | No | 1 | e0 | Tin/Lead (Sn/Pb) | YES | QUAD | 15V | 20 | 8 | SINGLE-ENDED MULTIPLEXER | Multiplexer or Switches | 1 | 38535Q/M;38534H;883B | 18V | 4.5V | -15V | 1.5kOhm | BREAK-BEFORE-MAKE | 250ns | 0.02A | 8:1 | ±4.5V~18V | 1nA | 5pF 15pF | 250ns, 250ns | 90 Ω |
