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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Screening Level | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | Threshold Voltage | Input Voltage (Max) | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Number of Inputs | Output | Pulsed Drain Current-Max (IDM) | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SUP50010E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup50010ege3-datasheets-6169.pdf | TO-220-3 | 14 Weeks | NOT SPECIFIED | NOT SPECIFIED | 60V | 375W Tc | N-Channel | 10895pF @ 30V | 2m Ω @ 30A, 10V | 4V @ 250μA | 150A Tc | 212nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG529AK/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg529ak883-datasheets-2725.pdf | 18-CDIP (0.300, 7.62mm) | 18 | 16 Weeks | 36V | 13V | 400Ohm | 18 | no | No | 1 | e0 | Tin/Lead (Sn/Pb) | NO | DUAL | 15V | 18 | 4 | DIFFERENTIAL MULTIPLEXER | Multiplexer or Switches | +-15V | 2 | 38535Q/M;38534H;883B | 22V | 7V | -15V | 400Ohm | BREAK-BEFORE-MAKE | 1500ns | 4:1 | SP4T | ±15V | 1nA | 5pF 25pF | 1.5μs, 1μs | 4pC | 24 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG16N50C-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-sihg16n50ce3-datasheets-6459.pdf | TO-247-3 | 3 | 11 Weeks | 38.000013g | Unknown | 3 | yes | No | 260 | 3 | 1 | Single | 40 | 250W | 1 | FET General Purpose Power | 27 ns | 156ns | 31 ns | 29 ns | 16A | 30V | SILICON | SWITCHING | 3V | 250W Tc | TO-247AC | 40A | 500V | N-Channel | 1900pF @ 25V | 380m Ω @ 8A, 10V | 5V @ 250μA | 16A Tc | 68nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG612DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg612dyt1-datasheets-2726.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 665.986997mg | 18V | 10V | 45Ohm | 16 | no | unknown | 4 | e0 | Tin/Lead (Sn/Pb) | 600mW | GULL WING | 1.27mm | 16 | 600mW | Multiplexer or Switches | 515-3V | Not Qualified | 500MHz | 50 ns | 35 ns | 15V | Dual, Single | 10V | 4 | SEPARATE OUTPUT | 45Ohm | 45Ohm | BREAK-BEFORE-MAKE | NO | 10V~18V ±10V~15V | 1:1 | SPST - NO | 250pA | 3pF 2pF | 35ns, 25ns | 4pC | 2 Ω | -87dB @ 5MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG120N60E-GE3 | Vishay Siliconix | $3.67 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg120n60ege3-datasheets-6710.pdf | TO-247-3 | 14 Weeks | TO-247AC | 600V | 179W Tc | N-Channel | 1562pF @ 100V | 120mOhm @ 12A, 10V | 5V @ 250μA | 25A Tc | 45nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG643DJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg641dy-datasheets-2728.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 15V | 500MHz | 6mA | 16 | 1.627801g | 21V | 10V | 15Ohm | 16 | no | unknown | 2 | e0 | Tin/Lead (Sn/Pb) | NO | 470mW | DUAL | 16 | Multiplexer or Switches | 15-3V | 2 | Not Qualified | 70 ns | 50 ns | 15V | Single | 10V | 15Ohm | BREAK-BEFORE-MAKE | 3V~15V ±3V~15V | 2:1 | SPDT | 10nA | 12pF 12pF | 70ns, 50ns | 19pC | 1 Ω | -87dB @ 5MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9510STRLPBF | Vishay Siliconix | $1.20 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9510strlpbf-datasheets-7460.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 1.2Ohm | 3 | No | 1 | Single | 3.7W | 1 | D2PAK | 200pF | 10 ns | 27ns | 17 ns | 15 ns | -4A | 20V | 100V | 3.7W Ta 43W Tc | 1.2Ohm | -100V | P-Channel | 200pF @ 25V | 1.2Ohm @ 2.4A, 10V | 4V @ 250μA | 4A Tc | 8.7nC @ 10V | 1.2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM300BIC01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF830STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-irf830strlpbf-datasheets-8512.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 11 Weeks | 1.437803g | 1.5Ohm | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 610pF | 8.2 ns | 16ns | 16 ns | 42 ns | 4.5A | 20V | 500V | 74W Tc | 1.5Ohm | N-Channel | 610pF @ 25V | 1.5Ohm @ 2.7A, 10V | 4V @ 250μA | 4.5A Tc | 38nC @ 10V | 1.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9233DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg9233dyt1-datasheets-2750.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 1μA | 8 | 540.001716mg | 12V | 2.7V | 30Ohm | 8 | no | unknown | 2 | e0 | Tin/Lead (Sn/Pb) | 400mW | DUAL | GULL WING | 8 | 400mW | Multiplexer or Switches | 3/5V | Not Qualified | 75 ns | 50 ns | Single | 2 | SEPARATE OUTPUT | 30Ohm | 30Ohm | BREAK-BEFORE-MAKE | NC | 1:1 | 2.7V~12V | SPST - NO | 100pA | 7pF 13pF | 75ns, 50ns | 2pC | 400m Ω | -90dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9120PBF | Vishay Siliconix | $2.66 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9120trpbf-datasheets-5334.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 600mOhm | 3 | Tin | No | 56A | 100V | 1 | Single | 2.5W | 1 | D-Pak | 390pF | 9.5 ns | 29ns | 25 ns | 21 ns | 5.6A | 20V | 100V | -4V | 2.5W Ta 42W Tc | 600mOhm | P-Channel | 390pF @ 25V | 600mOhm @ 3.4A, 10V | 4V @ 250μA | 5.6A Tc | 18nC @ 10V | 600 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9232DY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1.75mm | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg9233dyt1-datasheets-2750.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 3.9mm | 8 | no | unknown | 2 | e0 | TIN LEAD | YES | DUAL | GULL WING | 240 | 3V | 8 | 1 | 30 | Multiplexer or Switches | 3/5V | 2 | Not Qualified | R-PDSO-G8 | SEPARATE OUTPUT | 30Ohm | 74 dB | 0.4Ohm | BREAK-BEFORE-MAKE | NO | 1:1 | 2.7V~12V | SPST - NC | 100pA | 7pF 13pF | 75ns, 50ns | 2pC | 400m Ω | -90dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG33N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihg33n60ege3-datasheets-9756.pdf | TO-247-3 | Lead Free | 14 Weeks | 38.000013g | Unknown | 3 | Tin | No | 1 | Single | 278W | 1 | TO-247AC | 3.508nF | 56 ns | 90ns | 80 ns | 150 ns | 33A | 20V | 600V | 2V | 278W Tc | 99mOhm | 600V | N-Channel | 3508pF @ 100V | 99mOhm @ 16.5A, 10V | 4V @ 250μA | 33A Tc | 150nC @ 10V | 99 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM200BCA01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2016 | CDIP | 36V | 13V | 14 | 825mW | 22V | 7V | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002K-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-2n7002kt1ge3-datasheets-5738.pdf | TO-236-3, SC-59, SOT-23-3 | 3.0226mm | 1.12mm | 1.397mm | Lead Free | 1.437803g | Unknown | 2Ohm | 3 | No | 1 | Single | 350mW | 1 | 150°C | SOT-23-3 (TO-236) | 30pF | 25 ns | 35 ns | 300mA | 20V | 60V | 2.5V | 350mW Ta | 2Ohm | 60V | N-Channel | 30pF @ 25V | 2 V | 2Ohm @ 500mA, 10V | 2.5V @ 250μA | 300mA Ta | 0.6nC @ 4.5V | 2 Ω | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 9073706PA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Bulk | 1 (Unlimited) | CMOS | 5.08mm | Non-RoHS Compliant | 2016 | 8-CDIP (0.300, 7.62mm) | 9.78mm | 7.62mm | 8 | 1 | NO | DUAL | NOT SPECIFIED | 15V | 2.54mm | 8 | 1 | NOT SPECIFIED | 1 | R-GDIP-T8 | -15V | 25Ohm | 82 dB | 96ns | 96ns | 2:1 | SPDT | ±15V | 250pA | 12pF | 38pC | -88dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPE30PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfpe30pbf-datasheets-1944.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 8 Weeks | 38.000013g | 3 | No | 1 | Single | 125W | 1 | TO-247-3 | 1.3nF | 12 ns | 33ns | 30 ns | 82 ns | 4.1A | 20V | 800V | 125W Tc | 3Ohm | 800V | N-Channel | 1300pF @ 25V | 3Ohm @ 2.5A, 10V | 4V @ 250μA | 4.1A Tc | 78nC @ 10V | 3 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 8767301IA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | 2009 | Metal | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHW47N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihw47n60ege3-datasheets-2291.pdf | TO-3P-3 Full Pack | Lead Free | 3 | 19 Weeks | 38.000013g | Unknown | 64mOhm | 3 | yes | No | 1 | Single | 357W | 1 | FET General Purpose Powers | 50 ns | 25ns | 26 ns | 140 ns | 47A | 20V | SILICON | SWITCHING | 600V | 600V | 2.5V | 357W Tc | TO-247AD | N-Channel | 9620pF @ 100V | 64m Ω @ 24A, 10V | 4V @ 250μA | 47A Tc | 220nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 8767301XA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | 14 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2393DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2393dst1ge3-datasheets-3128.pdf | TO-236-3, SC-59, SOT-23-3 | 14 Weeks | SOT-23-3 (TO-236) | 30V | 1.3W Ta 2.5W Tc | P-Channel | 980pF @ 15V | 22.7mOhm @ 5A, 10V | 2.2V @ 250μA | 6.1A Ta 7.5A Tc | 25.2nC @ 10V | 4.5V 10V | +16V, -20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM306BCC | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFIBC30GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfibc30gpbf-datasheets-3611.pdf | 600V | 2.5A | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 35W | 1 | TO-220-3 | 660pF | 11 ns | 13ns | 14 ns | 35 ns | 2.5A | 20V | 600V | 35W Tc | 2.2Ohm | 600V | N-Channel | 660pF @ 25V | 2.2Ohm @ 1.5A, 10V | 4V @ 250μA | 2.5A Tc | 31nC @ 10V | 2.2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2788DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2788dnt1e4-datasheets-4513.pdf | 16-WFQFN | 2.6mm | 750μm | 1.8mm | 1μA | 16 | 57.09594mg | Unknown | 4.3V | 1.65V | 500mOhm | 16 | yes | 2 | 1μA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 525mW | QUAD | NO LEAD | 260 | 3V | DG2788 | 16 | 2 | 40 | 525mW | Multiplexer or Switches | 2 | Not Qualified | 72 ns | 43 ns | Single | 8 | 4 | 500mOhm | 49 dB | 0.05Ohm | BREAK-BEFORE-MAKE | 75ns | 2:2 | 1.65V~4.3V | DPDT | 1nA | 81pF | 72ns, 43ns | 87pC | 50m Ω | -96dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPG40PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfpg40pbf-datasheets-4247.pdf | 1kV | 4.3A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 3 | No | 1 | Single | 150W | 1 | TO-247-3 | 1.6nF | 15 ns | 33ns | 30 ns | 100 ns | 4.3A | 20V | 1000V | 4V | 150W Tc | 710 ns | 3.5Ohm | 1kV | N-Channel | 1600pF @ 25V | 4 V | 3.5Ohm @ 2.6A, 10V | 4V @ 250μA | 4.3A Tc | 120nC @ 10V | 3.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG413LDQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg411ldqt1-datasheets-8917.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | Lead Free | 1μA | 172.98879mg | 12V | 2.7V | 50Ohm | 16 | No | 450mW | DG413 | 4 | 450mW | 4 | 16-TSSOP | 280MHz | SPST | 50 ns | 35 ns | 6V | Dual, Single | 3V | 4 | 4 | 17Ohm | 2.7V~12V ±3V~6V | 1:1 | SPST - NO/NC | 250pA | 5pF 6pF | 19ns, 12ns | 5pC | -95dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB17N50LPBF | Vishay Siliconix | $3.32 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfb17n50lpbf-datasheets-5152.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 280mOhm | 3 | No | 1 | Single | 220W | 1 | TO-220AB | 2.76nF | 21 ns | 51ns | 28 ns | 50 ns | 16A | 30V | 500V | 5V | 220W Tc | 250 ns | 320mOhm | N-Channel | 2760pF @ 25V | 5 V | 320mOhm @ 9.9A, 10V | 5V @ 250μA | 16A Tc | 130nC @ 10V | 320 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG636EN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | 500nA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg636ent1e4-datasheets-4736.pdf | 16-WFQFN | 2.6mm | 750μm | 1.8mm | 500nA | 16 | 14 Weeks | 12V | 2.7V | 170Ohm | 16 | yes | No | 2 | 525mW | QUAD | 5V | DG636 | 16 | 2 | 525mW | 610MHz | 60 ns | 52 ns | 5V | Dual, Single | 2.7V | -5V | 4 | 5V | 2 | 115Ohm | 58 dB | 1Ohm | BREAK-BEFORE-MAKE | 76ns | 90ns | 2.7V~12V ±2.7V~5V | 100A | 2:1 | SPDT | 100pA | 2.1pF 4.2pF | 60ns, 52ns | 0.1pC | 1 Ω | -88dB @ 10MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ24LPBF | Vishay Siliconix | $3.97 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlz24lpbf-datasheets-7621.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.41mm | 9.01mm | 4.7mm | 3 | 8 Weeks | 6.000006g | Unknown | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | 260 | 3 | 1 | Single | 40 | 1 | FET General Purpose Power | 11 ns | 110ns | 41 ns | 23 ns | 17A | 10V | SILICON | DRAIN | SWITCHING | 3.7W Ta 60W Tc | 68A | 60V | N-Channel | 870pF @ 25V | 100m Ω @ 10A, 5V | 2V @ 250μA | 17A Tc | 18nC @ 5V | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2015DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2015dnt1e4-datasheets-5327.pdf | 16-VQFN Exposed Pad | 4mm | 950μm | 4mm | 1μA | 16 | 57.09594mg | 3.3V | 2.7V | 1.6Ohm | 16 | yes | 2 | e4 | PALLADIUM GOLD OVER NICKEL | 1.88W | QUAD | NO LEAD | 260 | 3V | 0.65mm | DG2015 | 16 | 2 | 30 | Multiplexer or Switches | 3V | 2 | Not Qualified | 65 ns | 60 ns | Single | SEPARATE OUTPUT | 1.6Ohm | 67 dB | 0.15Ohm | BREAK-BEFORE-MAKE | 67ns | 2:2 | 2.7V~3.3V | DPDT | 1nA | 67pF | 40ns, 35ns | 7pC | 150m Ω | -70dB @ 1MHz |
