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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Throw Configuration | Turn On Delay Time | Leakage Current | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | FET Technology | Number of Outputs | Threshold Voltage | Power - Max | Input Voltage (Min) | Input Voltage (Max) | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| SIA913DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sia913djt1ge3-datasheets-5462.pdf | PowerPAK® SC-70-6 Dual | Unknown | 70mOhm | 6 | No | 1.9W | SIA913 | Dual | 1.9W | PowerPAK® SC-70-6 Dual | 400pF | 15 ns | 25ns | 10 ns | 20 ns | -4.5A | 8V | 12V | -1V | 6.5W | 70mOhm | 12V | 2 P-Channel (Dual) | 400pF @ 6V | -1 V | 70mOhm @ 3.3A, 4.5V | 1V @ 250μA | 4.5A | 12nC @ 8V | Standard | 70 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG1411EEN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 0.95mm | ROHS3 Compliant | 2017 | /files/vishaysiliconix-dg1412eent1ge4-datasheets-9047.pdf | 16-VQFN Exposed Pad | 16 | 16 Weeks | unknown | 4 | YES | QUAD | NO LEAD | 5V | 0.65mm | 1 | 4 | S-XQCC-N16 | 150MHz | -5V | -16.5V | 16.5V | 1.5Ohm | 78 dB | 0.04Ohm | BREAK-BEFORE-MAKE | 280ns | NC | 4.5V~24V ±4.5V~15V | 1:1 | SPST - NC | 500pA | 24pF 23pF | 140ns, 110ns | -41pC | 40m Ω | -104dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4561DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4561dyt1ge3-datasheets-5537.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | EAR99 | unknown | 3.3W | GULL WING | SI4561 | 8 | Dual | 2W | 2 | Not Qualified | 79ns | 14 ns | 36 ns | 6.8A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 3W 3.3W | 5.6A | 0.0355Ohm | 40V | N and P-Channel | 640pF @ 20V | 35.5m Ω @ 5A, 10V | 3V @ 250μA | 6.8A 7.2A | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG411LEDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 1.2mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg412ledyt1ge3-datasheets-1089.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5mm | 16 | 20 Weeks | 26Ohm | 16 | 4 | Pure Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 5V | 0.65mm | 1 | NOT SPECIFIED | 4 | -5V | 26Ohm | 68 dB | 60ns | 3V~16V ±3V~8V | 1:1 | SPST - NC | 1nA | 5pF 6pF | 50ns, 30ns | 6.6pC | -114dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJB60EP-T2_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqjb60ept1ge3-datasheets-4698.pdf | PowerPAK® SO-8 Dual | 14 Weeks | PowerPAK® SO-8 Dual | 60V | 48W Tc | 2 N-Channel (Dual) | 1600pF @ 25V | 12mOhm @ 10A, 10V | 2.5V @ 250μA | 30A Tc | 30nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG4599EDL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-dg4599edlt1ge3-datasheets-7045.pdf | 6-TSSOP, SC-88, SOT-363 | 17 Weeks | 1 | SC-70-6 | 60Ohm | 2:1 | 1.8V~5.5V | SPDT | 7pF | 30ns, 25ns | 1pC | 2Ohm | -77dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4925BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4925bdyt1e3-datasheets-5285.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 14 Weeks | 186.993455mg | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.1W | GULL WING | 260 | SI4925 | 8 | 2 | Dual | 30 | 2 | Other Transistors | 9 ns | 12ns | 12 ns | 60 ns | -5.3A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | -30V | 2 P-Channel (Dual) | 25m Ω @ 7.1A, 10V | 3V @ 250μA | 5.3A | 50nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG453EQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 5μA | ROHS3 Compliant | 2012 | /files/vishaysiliconix-dg452eqt1e3-datasheets-7713.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | 500nA | 16 | 15 Weeks | 172.98879mg | 36V | 12V | 7.3Ohm | 16 | yes | ALSO OPERATES WITH 12V SINGLE SUPPLY AND +/-15V DUAL SUPPLY | No | 4 | e3 | MATTE TIN | 450mW | GULL WING | 260 | 5V | 0.65mm | DG453 | 16 | 1 | 40 | 450mW | Multiplexer or Switches | 4 | SPST | 118 ns | 97 ns | 22V | 15V | Dual, Single | 5V | -5V | 4 | SEPARATE OUTPUT | 5.3Ohm | 0.13Ohm | BREAK-BEFORE-MAKE | 113ns | 256ns | 1:1 | SPST - NO/NC | ±5V~15V | 500pA | 31pf 34pF | 118ns, 97ns | 22pC | 120m Ω | -85dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1903DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1903dlt1e3-datasheets-4312.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | 270mW | GULL WING | 260 | SI1903 | 6 | 30 | 270mW | 2 | Other Transistors | 7.5 ns | 20ns | 12 ns | 8.5 ns | 410mA | 12V | SILICON | 20V | METAL-OXIDE SEMICONDUCTOR | 0.41A | 0.995Ohm | 2 P-Channel (Dual) | 995m Ω @ 410mA, 4.5V | 1.5V @ 250μA | 1.8nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG1413EEN-T1-GE4 | Vishay Siliconix | $5.73 |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 0.95mm | ROHS3 Compliant | 2017 | /files/vishaysiliconix-dg1412eent1ge4-datasheets-9047.pdf | 16-VQFN Exposed Pad | 16 | 16 Weeks | unknown | 4 | YES | QUAD | NO LEAD | 5V | 0.65mm | 1 | 4 | S-XQCC-N16 | 150MHz | -5V | -16.5V | 16.5V | 1.5Ohm | 78 dB | 0.04Ohm | BREAK-BEFORE-MAKE | 280ns | 4.5V~24V ±4.5V~15V | 1:1 | SPST - NO/NC | 500pA | 24pF 23pF | 140ns, 110ns | -41pC | 40m Ω | -104dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4906DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4906dyt1e3-datasheets-4512.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 3.1W | GULL WING | 260 | SI4906 | 8 | Dual | 30 | 2W | 2 | 85ns | 7 ns | 17 ns | 5.3A | 16V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 30A | 0.039Ohm | 40V | 2 N-Channel (Dual) | 625pF @ 20V | 39m Ω @ 5A, 10V | 2.2V @ 250μA | 6.6A | 22nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG445DY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 5μA | ROHS3 Compliant | 2007 | /files/vishaysiliconix-dg444dyt1e3-datasheets-1287.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | Lead Free | 1μA | 16 | 13 Weeks | 665.986997mg | No SVHC | 36V | 13V | 85Ohm | 16 | yes | No | 4 | 1μA | e3 | Matte Tin (Sn) | 640mW | GULL WING | 260 | 15V | 1.27mm | DG445 | 16 | 1 | 40 | 640mW | Multiplexer or Switches | 512/+-15V | SPST | 250 ns | 210 ns | 22V | 20V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 85Ohm | 50Ohm | 60 dB | BREAK-BEFORE-MAKE | NO | 5V~36V ±5V~20V | 1:1 | SPST - NO | 500pA | 4pF 4pF | 250ns, 210ns | -1pC | -100dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA950DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sia950djt1ge3-datasheets-2084.pdf | PowerPAK® SC-70-6 Dual | 6 | 6 | yes | EAR99 | No | e3 | MATTE TIN | 7W | 260 | SIA950 | 6 | Dual | 40 | 1.9W | 2 | FET General Purpose Power | 10 ns | 15ns | 15 ns | 25 ns | 470mA | 16V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.47A | 190V | 2 N-Channel (Dual) | 90pF @ 100V | 3.8 Ω @ 360mA, 4.5V | 1.4V @ 250μA | 950mA | 4.5nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG308ACJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 0°C~70°C TA | Tube | 1 (Unlimited) | CMOS | 10μA | ROHS3 Compliant | 2015 | /files/vishaysiliconix-dg309dyt1e3-datasheets-1594.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 15V | 10μA | 16 | 12 Weeks | 1.627801g | 36V | 13V | 100Ohm | 16 | yes | No | 4 | e3 | MATTE TIN | 470mW | 15V | DG308 | 16 | 1 | 470mW | Multiplexer or Switches | SPST | 200 ns | 150 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 100Ohm | 78 dB | BREAK-BEFORE-MAKE | NO | 1:1 | SPST - NO | ±15V | 1nA | 11pF 8pF | 200ns, 150ns | -10pC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3981DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si3981dvt1e3-datasheets-4467.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | Unknown | 6 | EAR99 | No | 800mW | GULL WING | SI3981 | 6 | Dual | 800mW | 2 | Other Transistors | 30 ns | 50ns | 21 ns | 45 ns | -1.9A | 8V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | -1.1V | 0.185Ohm | 20V | 2 P-Channel (Dual) | -1.1 V | 185m Ω @ 1.9A, 4.5V | 1.1V @ 250μA | 1.6A | 5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG417BDY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg418bdqt1e3-datasheets-1717.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 20V | Lead Free | 1μA | 8 | 14 Weeks | 540.001716mg | 36V | 13V | 35Ohm | 8 | yes | No | 4 | 1nA | e3 | Matte Tin (Sn) | 400mW | GULL WING | 260 | 15V | DG417 | 8 | 1 | 40 | 400mW | Multiplexer or Switches | SPST | 89 ns | 80 ns | 22V | 15V | Dual, Single | 7V | -15V | 1 | 25Ohm | 82 dB | BREAK-BEFORE-MAKE | NC | 12V ±15V | 1:1 | SPST - NC | 250pA | 12pF 12pF | 89ns, 80ns | 38pC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4830ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4830adyt1e3-datasheets-4497.pdf | 8-SOIC (0.154, 3.90mm Width) | 186.993455mg | 8 | 1.1W | SI4830 | 2 | 8-SO | 5.7A | 20V | 30V | 1.1W | 22mOhm | 2 N-Channel (Half Bridge) | 22mOhm @ 7.5A, 10V | 3V @ 250μA | 5.7A | 11nC @ 4.5V | Logic Level Gate | 22 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2012EDL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-dg2012edlt1ge3-datasheets-4852.pdf | 6-TSSOP, SC-88, SOT-363 | 17 Weeks | 1 | SC-70-6 | 160MHz | 1.6Ohm | 2:1 | 1.65V~5.5V | SPDT | 5nA | 16pF | 32ns, 28ns | 8pC | 300mOhm | -63dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4965DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4965dyt1ge3-datasheets-2286.pdf | 8-SOIC (0.154, 3.90mm Width) | No | 2W | Dual | 8-SO | 35 ns | 45ns | 90 ns | 170 ns | 8A | 8V | 8V | 2W | 21mOhm | 2 P-Channel (Dual) | 21mOhm @ 8A, 4.5V | 450mV @ 250μA (Min) | 55nC @ 4.5V | Logic Level Gate | 21 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG428DJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 20μA | ROHS3 Compliant | 2015 | /files/vishaysiliconix-dg428dje3-datasheets-5967.pdf | 18-DIP (0.300, 7.62mm) | 37.4mm | Lead Free | 100μA | 18 | 12 Weeks | 1.270087g | Unknown | 36V | 13V | 150Ohm | 18 | yes | 1 | 100μA | e3 | Matte Tin (Sn) | 900mW | NOT SPECIFIED | 15V | 2.54mm | DG428 | 18 | 8 | NOT SPECIFIED | 900mW | 1 | Not Qualified | 300 ns | 1μA | 300 ns | 22V | Multiplexer | 250 ns | Dual, Single | 7V | -15V | 100Ohm | 75 dB | 5Ohm | BREAK-BEFORE-MAKE | 225ns | 12V ±15V | 0.03A | 8:1 | 500pA | 11pF 40pF | 150ns, 150ns | 1pC | 5 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5915BDC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si5915bdct1e3-datasheets-2313.pdf | 8-SMD, Flat Lead | 8 | 8 | EAR99 | e3 | MATTE TIN | 3.1W | C BEND | 260 | SI5915 | 8 | Dual | 40 | 1.7W | 2 | Not Qualified | 12ns | 12 ns | 20 ns | 4A | 8V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 3.1W | 4A | 10A | 0.07Ohm | 8V | 2 P-Channel (Dual) | 420pF @ 4V | 70m Ω @ 3.3A, 4.5V | 1V @ 250μA | 14nC @ 8V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG302BDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 230μA | 5.08mm | ROHS3 Compliant | 2005 | /files/vishaysiliconix-dg303bdye3-datasheets-5523.pdf | 14-DIP (0.300, 7.62mm) | 15V | 1mA | 14 | 10 Weeks | 1.620005g | Unknown | 36V | 13V | 30Ohm | 14 | yes | 2 | e3 | Matte Tin (Sn) | 470mW | NOT SPECIFIED | 15V | DG302 | 14 | 4 | NOT SPECIFIED | 470mW | Multiplexer or Switches | 2 | Not Qualified | DPST | 150 ns | 130 ns | 22V | 15V | Dual, Single | 7V | -15V | SEPARATE OUTPUT | 50Ohm | 62 dB | BREAK-BEFORE-MAKE | NO | 2:1 | DPST - NO | ±15V | 1nA | 14pF 14pF | 300ns, 250ns | 8pC | -74dB @ 500kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6933DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6933dqt1e3-datasheets-2333.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | 157.991892mg | 8 | 1W | 2 | Dual | 1W | 2 | 8-TSSOP | 13 ns | 10ns | 10 ns | 33 ns | 3.5A | 20V | 30V | 1W | 45mOhm | 2 P-Channel (Dual) | 45mOhm @ 3.5A, 10V | 1V @ 250μA (Min) | 30nC @ 10V | Logic Level Gate | 45 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG723DN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | Non-RoHS Compliant | 2013 | /files/vishaysiliconix-dg723dqt1ge3-datasheets-5589.pdf | 8-UFDFN Exposed Pad | 2.05mm | 550μm | 2.05mm | Lead Free | 2μA | 12 Weeks | 50.008559mg | Unknown | 5.5V | 1.8V | 4.5Ohm | 8 | No | 1μA | 842mW | 2 | 2 | 8-TDFN (2x2) | 366MHz | SPST | 30 ns | 35 ns | Single | 4.5Ohm | 1:1 | 1.8V~5.5V | SPST - NO/NC | 250pA | 8pF 9pF | 30ns, 35ns | 2.2pC | 200mOhm | -90dB @ 10MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7236DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7236dpt1ge3-datasheets-1565.pdf | PowerPAK® SO-8 Dual | 6 | 506.605978mg | yes | EAR99 | No | e3 | Matte Tin (Sn) | 46W | C BEND | 260 | SI7236 | 8 | 2 | Dual | 30 | 2 | FET General Purpose Power | R-XDSO-C6 | 10 ns | 15ns | 10 ns | 60 ns | 20.7A | 12V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 60A | 80A | 20V | 2 N-Channel (Dual) | 4000pF @ 10V | 5.2m Ω @ 20.7A, 4.5V | 1.5V @ 250μA | 60A | 105nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG308ADY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 10μA | 1.75mm | ROHS3 Compliant | 2008 | /files/vishaysiliconix-dg309dyt1e3-datasheets-1594.pdf | 16-SOIC (0.154, 3.90mm Width) | 9.9mm | 3.9mm | 15V | 10μA | 16 | 13 Weeks | 36V | 13V | 100Ohm | 16 | yes | unknown | 4 | 1nA | e3 | Matte Tin (Sn) | 600mW | GULL WING | 260 | 15V | 1.27mm | DG308 | 16 | 1 | 40 | 600mW | Multiplexer or Switches | 4 | Not Qualified | SPST | 200 ns | 150 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 100Ohm | 78 dB | BREAK-BEFORE-MAKE | NO | 1:1 | SPST - NO | ±15V | 11pF 8pF | 200ns, 150ns | -10pC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7925DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7925dnt1e3-datasheets-2425.pdf | PowerPAK® 1212-8 Dual | 1.3W | Dual | 1.3W | PowerPAK® 1212-8 Dual | 50ns | 50 ns | 70 ns | 4.8A | 8V | 12V | 1.3W | 42mOhm | 12V | 2 P-Channel (Dual) | 42mOhm @ 6.5A, 4.5V | 1V @ 250μA | 4.8A | 12nC @ 4.5V | Logic Level Gate | 42 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG441BDN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 5μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg442bdyt1e3-datasheets-1247.pdf | 16-VQFN Exposed Pad | 4mm | 950μm | 4mm | 1μA | 16 | 12 Weeks | 57.09594mg | 36V | 13V | 90Ohm | 16 | yes | unknown | 4 | e4 | PALLADIUM GOLD OVER NICKEL | 850mW | QUAD | NO LEAD | 260 | 15V | 0.65mm | DG441 | 16 | 1 | 30 | 850mW | Multiplexer or Switches | Not Qualified | SPST | 220 ns | 120 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 80Ohm | 90 dB | 2Ohm | BREAK-BEFORE-MAKE | NC | 12V ±15V | 1:1 | SPST - NC | 500pA | 4pF 4pF | 220ns, 120ns | -1pC | 2 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5975DC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si5975dct1ge3-datasheets-2325.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | 84.99187mg | 8 | 1.1W | 2 | Dual | 1.1W | 1206-8 ChipFET™ | 10 ns | 20ns | 20 ns | 31 ns | 3.1A | 8V | 12V | 1.1W | 86mOhm | -12V | 2 P-Channel (Dual) | 86mOhm @ 3.1A, 4.5V | 450mV @ 1mA (Min) | 3.1A | 9nC @ 4.5V | Logic Level Gate | 86 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG469EY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | 3μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg470eyt1e3-datasheets-7560.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 6μA | 8 | 14 Weeks | 540.001716mg | 36V | 12V | 8Ohm | 8 | yes | No | 1 | 3μA | e3 | MATTE TIN | 400mW | GULL WING | 260 | 15V | DG469 | 8 | 1 | 40 | 400mW | Multiplexer or Switches | 166 ns | 108 ns | 22V | 15V | Dual, Single | 4.5V | -15V | 2 | 1 | 6Ohm | 57 dB | 0.4Ohm | BREAK-BEFORE-MAKE | 2:1 | SPDT | ±4.5V~15V | 500pA | 37pF 85pF | 166ns, 108ns | 58pC | 120m Ω | -63dB @ 1MHz |
