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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | Number of Functions | Evaluation Kit | Nominal Supply Current | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Output Voltage | Voltage - Input | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Supply Type | Function | Min Dual Supply Voltage | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Number of Inputs | Output | Utilized IC / Part | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Switching | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Current - Output | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Supplied Contents | Main Purpose | Nominal Vgs | Board Type | Multiplexer/Demultiplexer Circuit | Switch Circuit | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Outputs and Type | Regulator Topology | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Crosstalk |
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| IRFR220TRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irfu220pbf-datasheets-5110.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 1.437803g | 800mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 10 | 2.5W | 1 | FET General Purpose Powers | R-PSSO-G2 | 7.2 ns | 22ns | 13 ns | 19 ns | 4.8A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 42W Tc | 200V | N-Channel | 260pF @ 25V | 800m Ω @ 2.9A, 10V | 4V @ 250μA | 4.8A Tc | 14nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9425DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BICMOS | 5μA | ROHS3 Compliant | 2015 | /files/vishaysiliconix-dg9424dqt1-datasheets-2818.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | 9V | Lead Free | 1μA | 16 | 172.98879mg | No SVHC | 12V | 2.7V | 3Ohm | 16 | No | 4 | 20nA | e3 | Matte Tin (Sn) | 450mW | GULL WING | 0.635mm | DG9425 | DPDT | 450mW | Multiplexer or Switches | SPST | 56 ns | 42 ns | 6V | 5V | Dual, Single | 3V | 4 | SEPARATE OUTPUT | 3Ohm | 1.7Ohm | BREAK-BEFORE-MAKE | NC | 3V~16V ±3V~8V | 1:1 | SPST - NC | 1nA | 49pF 37pF | 51ns, 35ns | 38pC | -77dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8806DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si8806dbt2e1-datasheets-0645.pdf | 4-XFBGA | 840μm | 213μm | 840μm | Lead Free | 44 Weeks | No SVHC | 4 | EAR99 | No | e3 | Matte Tin (Sn) | 1 | Single | 900mW | 10 ns | 20ns | 12 ns | 30 ns | 3.9A | 8V | 12V | 400mV | 500mW Ta | N-Channel | 43m Ω @ 1A, 4.5V | 1V @ 250μA | 17nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32409EVB | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sip32409dnpt1ge4-datasheets-0144.pdf | 8 Weeks | Power Distribution Switch (Load Switch) | SIP32409 | Board(s) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA72DP-T1-GE3 | Vishay Siliconix | $1.35 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira72dpt1ge3-datasheets-2032.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 40V | 56.8W Tc | N-Channel | 3240pF @ 20V | 3.5m Ω @ 10A, 10V | 2.4V @ 250μA | 60A Tc | 30nC @ 4.5V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP12107DB | Vishay Siliconix |
Min: 1 Mult: 1 |
download | microBUCK® | 1 (Unlimited) | Non-RoHS Compliant | 2012 | /files/vishaysiliconix-sic401db-datasheets-6199.pdf | Lead Free | 8 Weeks | Yes | 3.3V | 2.8V~5.5V | SiP12107 | 3A | Board(s) | DC/DC, Step Down | Fully Populated | 1, Non-Isolated | Buck | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR416DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir416dpt1ge3-datasheets-6188.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 14 Weeks | 506.605978mg | 8 | 1 | Single | 5.2W | 1 | PowerPAK® SO-8 | 3.35nF | 28 ns | 85ns | 40 ns | 42 ns | 50A | 20V | 40V | 5.2W Ta 69W Tc | 3.1mOhm | 40V | N-Channel | 3350pF @ 20V | 3.8mOhm @ 15A, 10V | 2.5V @ 250μA | 50A Tc | 90nC @ 10V | 3.8 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIC466EVB-D | Vishay Siliconix |
Min: 1 Mult: 1 |
download | /files/vishaysiliconix-sic469edt1ge3-datasheets-4516.pdf | 17 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR606BDP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir606bdpt1re3-datasheets-6978.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 100V | 5W Ta 62.5W Tc | 14.5mOhm | N-Channel | 1470pF @ 50V | 17.4mOhm @ 10A, 10V | 4V @ 250μA | 10.9A Ta 38.7A Tc | 30nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIC471EVB-A | Vishay Siliconix |
Min: 1 Mult: 1 |
download | /files/vishaysiliconix-sic473evbb-datasheets-7874.pdf | 9 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7686DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si7686dpt1e3-datasheets-7859.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 5W | 1 | FET General Purpose Power | R-XDSO-C5 | 13 ns | 16ns | 8 ns | 23 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 3V | 5W Ta 37.9W Tc | 50A | 0.0095Ohm | 5 mJ | 30V | N-Channel | 1220pF @ 15V | 9.5m Ω @ 13.8A, 10V | 3V @ 250μA | 35A Tc | 26nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| V30443-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR220TRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfu220pbf-datasheets-5110.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 8 Weeks | 1.437803g | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 10 | 2.5W | 1 | FET General Purpose Powers | R-PSSO-G2 | 7.2 ns | 22ns | 13 ns | 19 ns | 4.8A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 42W Tc | 0.8Ohm | 200V | N-Channel | 260pF @ 25V | 800m Ω @ 2.9A, 10V | 4V @ 250μA | 4.8A Tc | 14nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1424EDH-T1-GE3 | Vishay Siliconix | $7.75 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1424edht1ge3-datasheets-9709.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 1.1mm | 1.25mm | 6 | 14 Weeks | 7.512624mg | No SVHC | 6 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 6 | 1 | 30 | 1.56W | 1 | FET General Purpose Power | 150 ns | 300ns | 1.6 μs | 5.6 μs | 4A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 20V | 20V | 400mV | 1.56W Ta 2.8W Tc | 4A | 0.033Ohm | N-Channel | 33m Ω @ 5A, 4.5V | 1V @ 250μA | 4A Tc | 18nC @ 8V | 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR812DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir812dpt1ge3-datasheets-8805.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | EAR99 | No | DUAL | C BEND | 1 | 6.25W | 1 | R-PDSO-C5 | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 1V | 6.25W Ta 104W Tc | N-Channel | 10240pF @ 15V | 1.45m Ω @ 20A, 10V | 2.3V @ 250μA | 60A Tc | 335nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| V50382-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4421DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4421dyt1e3-datasheets-9294.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 8.75MOhm | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | 45 ns | 90ns | 90 ns | 350 ns | -14A | 8V | SILICON | SWITCHING | 20V | 1.5W Ta | -20V | P-Channel | -800 mV | 8.75m Ω @ 14A, 4.5V | 800mV @ 850μA | 10A Ta | 125nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF614SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf614strrpbf-datasheets-4053.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 11 Weeks | 1.437803g | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 40 | 3.1W | 1 | FET General Purpose Power | R-PSSO-G2 | 7 ns | 7.6ns | 7 ns | 16 ns | 2.7A | 20V | SILICON | DRAIN | SWITCHING | 250V | 250V | 3.1W Ta 36W Tc | 2Ohm | N-Channel | 140pF @ 25V | 2 Ω @ 1.6A, 10V | 4V @ 250μA | 2.7A Tc | 8.2nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4490DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4490dyt1e3-datasheets-9674.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 80mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 3.1W | 1 | FET General Purpose Powers | 14 ns | 20ns | 25 ns | 32 ns | 2.85A | 20V | SILICON | 200V | 200V | 2V | 1.56W Ta | N-Channel | 80m Ω @ 4A, 10V | 2V @ 250μA (Min) | 2.85A Ta | 42nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUA70090E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sua70090ee3-datasheets-3339.pdf | TO-220-3 Full Pack | 3 | 14 Weeks | EAR99 | unknown | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 42.8A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 35.7W Tc | TO-220AB | 120A | 0.0093Ohm | 80 mJ | N-Channel | 1950pF @ 50V | 9.3m Ω @ 20A, 10V | 4V @ 250μA | 42.8A Tc | 50nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHH27N60EF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sihh27n60eft1ge3-datasheets-1565.pdf | 8-PowerTDFN | 14 Weeks | 600V | 202W Tc | N-Channel | 2609pF @ 100V | 100m Ω @ 13.5A, 10V | 4V @ 250μA | 29A Tc | 135nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG22N60E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sihg22n60ege3-datasheets-1867.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 19 Weeks | 38.000013g | Unknown | 180mOhm | 3 | No | 1 | Single | 227W | 1 | TO-247AC | 1.92nF | 18 ns | 68ns | 54 ns | 59 ns | 21A | 20V | 600V | 2V | 227W Tc | 180mOhm | 600V | N-Channel | 1920pF @ 100V | 180mOhm @ 11A, 10V | 4V @ 250μA | 21A Tc | 86nC @ 10V | 180 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8401DB-T1-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si8401dbt1e1-datasheets-3105.pdf | 4-XFBGA, CSPBGA | 1.6mm | 360μm | 1.6mm | 4 | 33 Weeks | 4 | yes | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | BALL | 260 | 4 | 1 | Single | 40 | 1.47W | 1 | Other Transistors | 17 ns | 28ns | 28 ns | 88 ns | -4.9A | 12V | SILICON | SWITCHING | 20V | 20V | 1.47W Ta | 3.6A | 0.095Ohm | P-Channel | 65m Ω @ 1A, 4.5V | 1.4V @ 250μA | 3.6A Ta | 17nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7121ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7121dnt1ge3-datasheets-5243.pdf | PowerPAK® 1212-8 | Lead Free | 5 | 14 Weeks | Unknown | 12.5mOhm | 8 | EAR99 | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | SI7121 | 1 | Single | 30 | 1 | S-PDSO-F5 | 38 ns | 34ns | 10 ns | 24 ns | -18A | 25V | SILICON | DRAIN | SWITCHING | 30V | -2.5V | 3.5W Ta 27.8W Tc | 50A | -30V | P-Channel | 1870pF @ 15V | 15m Ω @ 7A, 10V | 2.5V @ 250μA | 12A Ta | 50nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR460DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sir460dpt1ge3-datasheets-3486.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5W | 1 | FET General Purpose Power | R-XDSO-C5 | 25 ns | 16ns | 12 ns | 28 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 1V | 5W Ta 48W Tc | 24.3A | 70A | 0.0047Ohm | 45 mJ | 30V | N-Channel | 2071pF @ 15V | 1 V | 4.7m Ω @ 15A, 10V | 2.4V @ 250μA | 40A Tc | 54nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS454DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sis454dnt1ge3-datasheets-8466.pdf | PowerPAK® 1212-8 | Lead Free | 5 | 14 Weeks | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 3.8W | 1 | FET General Purpose Power | S-PDSO-C5 | 20 ns | 15ns | 10 ns | 25 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 1V | 3.8W Ta 52W Tc | 0.0054Ohm | 45 mJ | N-Channel | 1900pF @ 10V | 3.7m Ω @ 20A, 10V | 2.2V @ 250μA | 35A Tc | 53nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4838DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si4838dyt1e3-datasheets-5769.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 3mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 8 | 1 | Single | 1.6W | 1 | FET General Purpose Powers | 40 ns | 40ns | 70 ns | 140 ns | 25A | 8V | SILICON | 1.6W Ta | 12V | N-Channel | 600 mV | 3m Ω @ 25A, 4.5V | 600mV @ 250μA (Min) | 17A Ta | 60nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRC10DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-sirc10dpt1ge3-datasheets-0229.pdf | PowerPAK® SO-8 | 1.17mm | 14 Weeks | EAR99 | S17-0173-Single | unknown | NOT SPECIFIED | 1 | NOT SPECIFIED | 3.6W | 150°C | 10 ns | 15 ns | 23.9A | 43W Tc | 30V | N-Channel | 1873pF @ 15V | 3.5m Ω @ 10A, 10V | 2.4V @ 250μA | 60A Tc | 36nC @ 10V | Schottky Diode (Body) | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS11N50ATRRP | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfs11n50atrlp-datasheets-5178.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | 3 | 1 | Single | D2PAK | 1.423nF | 14 ns | 35ns | 28 ns | 32 ns | 11A | 30V | 500V | 170W Tc | 520mOhm | N-Channel | 1423pF @ 25V | 520mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 52nC @ 10V | 520 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR164DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir164dpt1re3-datasheets-0464.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 3.2MOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 69W | 1 | FET General Purpose Power | R-PDSO-C5 | 35 ns | 41ns | 39 ns | 52 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.2V | 5.2W Ta 69W Tc | 33.3A | 70A | 30V | N-Channel | 3950pF @ 15V | 2.5m Ω @ 15A, 10V | 2.5V @ 250μA | 50A Tc | 123nC @ 10V | 4.5V 10V | ±20V |
