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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Evaluation Kit | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Voltage - Input | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Utilized IC / Part | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Voltage - Output | Avalanche Energy Rating (Eas) | Current - Output | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Supplied Contents | Frequency - Switching | Main Purpose | Nominal Vgs | Board Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Outputs and Type | Regulator Topology |
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| SIP12109DB | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | 125°C | -40°C | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-sip12109dmpt1ge4-datasheets-6677.pdf | 8 Weeks | Yes | 4.5V~15V | SIP12109 | 0.6V~5.5V | 4A | Board(s) | 1.5MHz | DC/DC, Step Down | Fully Populated | 1, Non-Isolated | Buck | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4160DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4160dyt1ge3-datasheets-6253.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 14 Weeks | 186.993455mg | Unknown | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | 40 | 2.5W | 1 | 25 ns | 16ns | 12 ns | 28 ns | 25.4A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.5W Ta 5.7W Tc | 0.0049Ohm | 30V | N-Channel | 2071pF @ 15V | 1 V | 4.9m Ω @ 15A, 10V | 2.4V @ 250μA | 25.4A Tc | 54nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SIC437AEVB-B | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 9 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS66DN-T1-GE3 | Vishay Siliconix | $1.17 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss66dnt1ge3-datasheets-7135.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S | 30V | 5.1W Ta 65.8W Tc | N-Channel | 3327pF @ 15V | 1.38mOhm @ 20A, 10V | 2.5V @ 250μA | 49.1A Ta 178.3A Tc | 85.5nC @ 10V | Schottky Diode (Body) | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIC464EVB-B | Vishay Siliconix |
Min: 1 Mult: 1 |
download | /files/vishaysiliconix-sic464edt1ge3-datasheets-4714.pdf | 17 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4426DY-T1-E3 | Vishay Siliconix | $0.17 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4426dyt1e3-datasheets-7666.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | 25mOhm | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | 40 ns | 40ns | 40 ns | 90 ns | 6.5A | 12V | SILICON | 1.5W Ta | 20V | N-Channel | 25m Ω @ 8.5A, 4.5V | 1.4V @ 250μA | 6.5A Ta | 50nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||
| V30433-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9310TRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfr9310pbf-datasheets-8583.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 8 Weeks | 1.437803g | 3 | No | 1 | Single | 50W | 1 | D-Pak | 270pF | 11 ns | 10ns | 24 ns | 25 ns | 1.8A | 20V | 400V | 50W Tc | 7Ohm | -400V | P-Channel | 270pF @ 25V | 7Ohm @ 1.1A, 10V | 4V @ 250μA | 1.8A Tc | 13nC @ 10V | 7 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPS43N50KPBF | Vishay Siliconix | $4.26 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfps43n50k-datasheets-6058.pdf | 500V | 47A | TO-274AA | 16.1mm | 20.8mm | 5.3mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 78mOhm | 3 | No | 1 | Single | 540W | 1 | SUPER-247™ (TO-274AA) | 8.31nF | 25 ns | 140ns | 74 ns | 55 ns | 47A | 30V | 500V | 5V | 540W Tc | 78mOhm | 500V | N-Channel | 8310pF @ 25V | 90mOhm @ 28A, 10V | 5V @ 250μA | 47A Tc | 350nC @ 10V | 90 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SI4838BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4838bdyt1ge3-datasheets-8794.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 2.7mOhm | 8 | EAR99 | No | DUAL | GULL WING | 8 | 1 | Single | 2.5W | 1 | 150°C | 12 ns | 92ns | 19 ns | 56 ns | 22.5A | 8V | SILICON | SWITCHING | 400mV | 2.5W Ta 5.7W Tc | 12V | N-Channel | 5760pF @ 6V | 400 mV | 2.7m Ω @ 15A, 4.5V | 1V @ 250μA | 34A Tc | 84nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPF40PBF | Vishay Siliconix | $4.91 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfpf40-datasheets-0459.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 2.5Ohm | 3 | Tin | 1 | Single | 150W | 1 | TO-247-3 | 1.6nF | 15 ns | 36ns | 32 ns | 110 ns | 4.7A | 20V | 900V | 4V | 150W Tc | 2.5Ohm | 900V | N-Channel | 1600pF @ 25V | 4 V | 2.5Ohm @ 2.8A, 10V | 4V @ 250μA | 4.7A Tc | 120nC @ 10V | 2.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4634DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si4634dyt1ge3-datasheets-9413.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 14 Weeks | 186.993455mg | Unknown | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 2.5W | 1 | 14 ns | 10ns | 8 ns | 33 ns | 24.5A | 20V | SILICON | SWITCHING | 30V | 30V | 2.6V | 2.5W Ta 5.7W Tc | 70A | 0.0052Ohm | 45 mJ | N-Channel | 3150pF @ 15V | 5.2m Ω @ 15A, 10V | 2.6V @ 250μA | 24.5A Tc | 68nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFD310PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfd310-datasheets-8460.pdf | 4-DIP (0.300, 7.62mm) | 6.29mm | 3.37mm | 5mm | 8 Weeks | Unknown | 4 | No | 1W | 1 | 4-DIP, Hexdip, HVMDIP | 170pF | 8 ns | 9.9ns | 9.9 ns | 21 ns | 350mA | 20V | 400V | 4V | 1W Ta | 3.6Ohm | 400V | N-Channel | 170pF @ 25V | 3.6Ohm @ 210mA, 10V | 4V @ 250μA | 350mA Ta | 17nC @ 10V | 3.6 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM70101EL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum70101elge3-datasheets-0100.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | EAR99 | Pure Matte Tin (Sn) | YES | SINGLE | GULL WING | 260 | 30 | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 375W Tc | 120A | 240A | 0.0101Ohm | 281 mJ | P-Channel | 7000pF @ 50V | 10.1m Ω @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 190nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA14N60E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-siha14n60ee3-datasheets-3348.pdf | TO-220-3 Full Pack | 18.1mm | 3 | 18 Weeks | NO | 1 | 147W | 1 | 150°C | R-PSFM-T3 | 15 ns | 35 ns | 13A | 30V | SILICON | SWITCHING | 147W Tc | TO-220AB | 32A | 0.309Ohm | 600V | N-Channel | 1205pF @ 100V | 309m Ω @ 7A, 10V | 4V @ 250μA | 13A Tc | 64nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9210TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfu9210pbf-datasheets-5149.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 3Ohm | 3 | No | 1 | Single | 2.5W | 1 | D-Pak | 170pF | 8 ns | 12ns | 13 ns | 11 ns | 1.9A | 20V | 200V | -2V | 2.5W Ta 25W Tc | 3Ohm | -200V | P-Channel | 170pF @ 25V | -2 V | 3Ohm @ 1.1A, 10V | 4V @ 250μA | 1.9A Tc | 8.9nC @ 10V | 3 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF620STRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf620strlpbf-datasheets-3318.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 800mOhm | 3 | No | 1 | Single | 3W | 1 | D2PAK | 260pF | 7.2 ns | 22ns | 13 ns | 19 ns | 5.2A | 20V | 200V | 3W Ta 50W Tc | 800mOhm | N-Channel | 260pF @ 25V | 800mOhm @ 3.1A, 10V | 4V @ 250μA | 5.2A Tc | 14nC @ 10V | 800 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5441BDC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si5441bdct1e3-datasheets-3149.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | Lead Free | 8 | 14 Weeks | 84.99187mg | 45mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.3W | 1 | Other Transistors | 15 ns | 50ns | 50 ns | 50 ns | 4.4A | 12V | SILICON | 20V | 1.3W Ta | -20V | P-Channel | 45m Ω @ 4.4A, 4.5V | 1.4V @ 250μA | 4.4A Ta | 22nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||
| SQ2364EES-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq2364eest1ge3-datasheets-7819.pdf | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | SOT-23-3 (TO-236) | 60V | 3W Tc | N-Channel | 330pF @ 25V | 240mOhm @ 2A, 4.5V | 1V @ 250μA | 2A Tc | 2.5nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7463ADP-T1-GE3 | Vishay Siliconix | $90.90 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7463adpt1ge3-datasheets-4096.pdf | PowerPAK® SO-8 | 1.12mm | Lead Free | 5 | 14 Weeks | No SVHC | 8 | EAR99 | Tin | No | e3 | DUAL | C BEND | 8 | 1 | 5W | 1 | Other Transistors | 150°C | R-XDSO-C5 | 15 ns | 14ns | 11 ns | 56 ns | -16.6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | -2.3V | 5W Ta 39W Tc | 46A | 70A | 45 mJ | -40V | P-Channel | 4150pF @ 20V | 10m Ω @ 15A, 10V | 2.3V @ 250μA | 46A Tc | 144nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SIS488DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sis488dnt1ge3-datasheets-8490.pdf | PowerPAK® 1212-8 | 5 | 14 Weeks | 5.5mOhm | EAR99 | No | DUAL | C BEND | 1 | Single | 1 | S-PDSO-C5 | 22 ns | 65ns | 9 ns | 24 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 3.7W Ta 52W Tc | 20 mJ | 40V | N-Channel | 1330pF @ 20V | 5.5m Ω @ 20A, 10V | 2.2V @ 250μA | 40A Tc | 32nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIE822DF-T1-GE3 | Vishay Siliconix | $2.80 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie822dft1ge3-datasheets-5894.pdf | 10-PolarPAK® (S) | 4 | 14 Weeks | 10 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 10 | 1 | Single | 30 | 1 | FET General Purpose Power | R-XDSO-N4 | 35 ns | 31A | 20V | SILICON | DRAIN | SWITCHING | 5.2W Ta 104W Tc | 50A | 80A | 0.0034Ohm | 45 mJ | 20V | N-Channel | 4200pF @ 10V | 3.4m Ω @ 18.3A, 10V | 3V @ 250μA | 50A Tc | 78nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA413DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sia413djt1ge3-datasheets-0644.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | Lead Free | 4 | 14 Weeks | Unknown | 29mOhm | 6 | yes | EAR99 | Tin | No | DUAL | 260 | 6 | 1 | Single | 40 | 3.5W | 1 | Other Transistors | S-XDSO-N4 | 20 ns | 40ns | 40 ns | 70 ns | -12A | 8V | SILICON | DRAIN | SWITCHING | 12V | -1V | 3.5W Ta 19W Tc | 40A | -12V | P-Channel | 1800pF @ 10V | -1 V | 29m Ω @ 6.7A, 4.5V | 1V @ 250μA | 12A Tc | 57nC @ 8V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||
| SI4442DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4442dyt1e3-datasheets-6361.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 4.5mOhm | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.6W | 1 | 17 ns | 11ns | 11 ns | 125 ns | 22A | 12V | 30V | SILICON | 1.5V | 1.6W Ta | 30V | N-Channel | 1.5 V | 4.5m Ω @ 22A, 10V | 1.5V @ 250μA | 15A Ta | 50nC @ 4.5V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||
| SI7119DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7119dnt1ge3-datasheets-4330.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | 1.05Ohm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.7W | 1 | Other Transistors | S-XDSO-C5 | 9 ns | 11ns | 12 ns | 27 ns | -3.8A | 20V | SILICON | DRAIN | SWITCHING | 200V | 3.7W Ta 52W Tc | 5A | -200V | P-Channel | 666pF @ 50V | 1.05 Ω @ 1A, 10V | 4V @ 250μA | 3.8A Tc | 25nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFS9N60ATRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfs9n60apbf-datasheets-3643.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 750mOhm | 3 | No | 1 | Single | 170W | 1 | D2PAK | 1.4nF | 13 ns | 25ns | 22 ns | 30 ns | 9.2A | 30V | 600V | 170W Tc | 750mOhm | 600V | N-Channel | 1400pF @ 25V | 2 V | 750mOhm @ 5.5A, 10V | 4V @ 250μA | 9.2A Tc | 49nC @ 10V | 750 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ2362ES-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sq2362est1ge3-datasheets-0878.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | 30 | 3W | 1 | 175°C | 6 ns | 20ns | 18 ns | 14 ns | 4.3A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 1.5V | 3W Tc | 0.068Ohm | 26 pF | 60V | N-Channel | 550pF @ 30V | 95m Ω @ 4.5A, 10V | 2.5V @ 250μA | 4.3A Tc | 12nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3424BDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3424bdvt1ge3-datasheets-2612.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | 28MOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1 | FET General Purpose Power | 18 ns | 85ns | 12 ns | 17 ns | 7A | 20V | SILICON | SWITCHING | 2.1W Ta 2.98W Tc | 7A | 30V | N-Channel | 735pF @ 15V | 28m Ω @ 7A, 10V | 3V @ 250μA | 8A Tc | 19.6nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI7370DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si7370dpt1ge3-datasheets-8633.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 5 | 14 Weeks | 506.605978mg | No SVHC | 11MOhm | 8 | yes | EAR99 | FAST SWITCHING | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | FET General Purpose Powers | R-XDSO-C5 | 16 ns | 12ns | 12 ns | 50 ns | 15.8A | 20V | SILICON | DRAIN | SWITCHING | 4V | 1.9W Ta | 9.6A | 50A | 60V | N-Channel | 4 V | 11m Ω @ 12A, 10V | 4V @ 250μA | 9.6A Ta | 57nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SUD35N10-26P-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sud35n1026pe3-datasheets-3743.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 14 Weeks | 1.437803g | 26MOhm | 3 | Tin | unknown | GULL WING | 1 | Single | 1 | R-PSSO-G2 | 10 ns | 10ns | 10 ns | 15 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 100V | 8.3W Ta 83W Tc | TO-252AA | 40A | 55 mJ | N-Channel | 2000pF @ 12V | 26m Ω @ 12A, 10V | 4.4V @ 250μA | 35A Tc | 47nC @ 10V | 7V 10V | ±20V |
