Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Lead Length | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Data Rate | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Number of Inputs | Output | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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DG418LAK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | BICMOS | Non-RoHS Compliant | 8-CDIP (0.300, 7.62mm) | 7.62mm | 8 | 14 Weeks | 12V | 2.7V | 20Ohm | 8 | no | No | 1 | NO | DUAL | 5V | 2.54mm | 8 | 1 | Multiplexer or Switches | 1 | 6V | 3V | -5V | 20Ohm | 71 dB | BREAK-BEFORE-MAKE | 32ns | NC | 2.7V~12V ±3V~6V | 1:1 | SPST - NO | 1nA | 5pF | 43ns, 31ns | 1pC | -71dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIHP180N60E-GE3 | Vishay Siliconix | $2.76 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp180n60ege3-datasheets-6043.pdf | TO-220-3 | 14 Weeks | TO-220AB | 600V | 156W Tc | N-Channel | 1085pF @ 100V | 180mOhm @ 9.5A, 10V | 5V @ 250μA | 19A Tc | 33nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG442BDY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg442bdj-datasheets-7370.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 8 Weeks | 665.986997mg | 25V | 13V | 80Ohm | 16 | no | unknown | 4 | e0 | TIN LEAD | YES | 900mW | GULL WING | 240 | 15V | 1.27mm | 16 | 1 | 30 | Multiplexer or Switches | 4 | Not Qualified | 220 ns | 120 ns | 22V | 15V | Dual, Single | 7V | -15V | SEPARATE OUTPUT | 80Ohm | 90 dB | 2Ohm | BREAK-BEFORE-MAKE | NC | 12V ±15V | 1:1 | SPST - NO | 500pA | 4pF 4pF | 220ns, 120ns | -1pC | 2 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP244PBF | Vishay Siliconix | $3.57 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfp244pbf-datasheets-6432.pdf | 250V | 15A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 280mOhm | 3 | 1 | Single | 150W | 1 | TO-247-3 | 1.4nF | 14 ns | 49ns | 24 ns | 42 ns | 15A | 20V | 250V | 4V | 150W Tc | 280mOhm | 250V | N-Channel | 1400pF @ 25V | 4 V | 280mOhm @ 9A, 10V | 4V @ 250μA | 15A Tc | 63nC @ 10V | 280 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG613DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | 5nA | Non-RoHS Compliant | 2015 | /files/vishaysiliconix-dg612dyt1-datasheets-2726.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 500MHz | 1μA | 16 | 665.986997mg | 18V | 10V | 45Ohm | 16 | no | unknown | 4 | e0 | Tin/Lead (Sn/Pb) | 600mW | GULL WING | 16 | SPST | 600mW | Multiplexer or Switches | 1 | Not Qualified | 35 ns | 25 ns | 21V | Dual, Single | -10V | SEPARATE OUTPUT | 45Ohm | 45Ohm | BREAK-BEFORE-MAKE | NO/NC | 10V~18V ±10V~15V | 2:2 | DPDT | 250pA | 3pF 2pF | 35ns, 25ns | 4pC | 2 Ω | -87dB @ 10MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIHH21N60E-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihh21n60et1ge3-datasheets-5421.pdf | 8-PowerTDFN | Lead Free | 4 | 14 Weeks | 8 | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PSSO-N4 | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 104W Tc | 0.176Ohm | 226 mJ | N-Channel | 2015pF @ 100V | 176m Ω @ 11A, 10V | 4V @ 250μA | 20A Tc | 83nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG9636DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 0.6mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg9636dnt1e4-datasheets-2774.pdf | 10-UFQFN | 1.8mm | 10 | yes | 2 | e4 | NICKEL PALLADIUM GOLD | YES | QUAD | NO LEAD | 260 | 3V | 0.4mm | 10 | 1 | 40 | Multiplexer or Switches | 2 | Not Qualified | R-XQCC-N10 | 720MHz | SEPARATE OUTPUT | 110Ohm | 57 dB | 5Ohm | BREAK-BEFORE-MAKE | 70ns | 2:1 | 2.7V~12V | SPDT | 1nA | 2pF | 70ns, 55ns | 23.5pC | 4 Ω | -67dB @ 10MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI7112DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si7112dnt1ge3-datasheets-6858.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 5 | 14 Weeks | Unknown | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.5W | 1 | FET General Purpose Powers | S-XDSO-C5 | 10 ns | 10ns | 10 ns | 65 ns | 11.3A | 12V | SILICON | DRAIN | SWITCHING | 30V | 30V | 600mV | 1.5W Ta | 60A | 0.0075Ohm | 20 mJ | N-Channel | 2610pF @ 15V | 7.5m Ω @ 17.8A, 10V | 1.5V @ 250μA | 11.3A Tc | 27nC @ 4.5V | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG441LDY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BICMOS | 1.75mm | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg441ldy-datasheets-2707.pdf | 16-SOIC (0.154, 3.90mm Width) | 9.9mm | 16 | yes | unknown | 4 | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 5V | 1.27mm | 16 | 1 | 40 | Multiplexer or Switches | +-3/+-6/3/12V | 4 | Not Qualified | R-PDSO-G16 | 280MHz | -5V | SEPARATE OUTPUT | 30Ohm | 68 dB | 0.1Ohm | BREAK-BEFORE-MAKE | 70ns | NC | 2.7V~12V ±3V~6V | 1:1 | SPST - NC | 1nA | 5pF 6pF | 60ns, 35ns | 5pC | 100m Ω | -95dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFU9024PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfr9024pbf-datasheets-5404.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Lead Free | 3 | 8 Weeks | 329.988449mg | Unknown | 280mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | 9.65mm | e3 | Matte Tin (Sn) - annealed | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | Other Transistors | 13 ns | 68ns | 29 ns | 15 ns | 8.8A | 20V | SILICON | DRAIN | SWITCHING | 60V | -4V | 2.5W Ta 42W Tc | -60V | P-Channel | 570pF @ 25V | 280m Ω @ 5.3A, 10V | 4V @ 250μA | 8.8A Tc | 19nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG9424DQ-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | Non-RoHS Compliant | 2005 | /files/vishaysiliconix-dg9424dqt1-datasheets-2818.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | 1μA | 172.98879mg | 12V | 2.7V | 3Ohm | 16 | 450mW | 4 | 16-TSSOP | 57 ns | 42 ns | 6V | Dual, Single | 3V | 3Ohm | 3V~16V ±3V~8V | 1:1 | SPST - NO | 1nA | 49pF 37pF | 51ns, 35ns | 38pC | -77dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SQD25N15-52_GE3 | Vishay Siliconix | $1.48 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd25n1552ge3-datasheets-8967.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 12 Weeks | 1.437803g | Unknown | 3 | Tin | No | 1 | Single | 107W | 1 | TO-252, (D-Pak) | 2.2nF | 11 ns | 11ns | 6 ns | 20 ns | 25A | 20V | 150V | 3V | 107W Tc | 52mOhm | N-Channel | 2200pF @ 25V | 52mOhm @ 15A, 10V | 4V @ 250μA | 25A Tc | 51nC @ 10V | 52 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SJM184BXA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | 14 | 18V | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIHW33N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-sihw33n60ege3-datasheets-9749.pdf | TO-3P-3 Full Pack | 3 | 19 Weeks | 38.000013g | Unknown | 3 | yes | No | 1 | Single | 1 | FET General Purpose Powers | 56 ns | 90ns | 80 ns | 150 ns | 33A | 4V | SILICON | SWITCHING | 2V | 278W Tc | TO-247AD | 88A | 0.099Ohm | 600V | N-Channel | 3508pF @ 100V | 99m Ω @ 16.5A, 10V | 4V @ 250μA | 33A Tc | 150nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SJM304BIA01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIHG039N60E-GE3 | Vishay Siliconix | $7.43 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg039n60ege3-datasheets-0082.pdf | TO-247-3 | 14 Weeks | TO-247AC | 600V | 357W Tc | N-Channel | 4369pF @ 100V | 39mOhm @ 32A, 10V | 5V @ 250μA | 63A Tc | 126nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG3535DB-T1-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 0.753mm | ROHS3 Compliant | 2014 | /files/vishaysiliconix-dg3536dbt5e1-datasheets-8351.pdf | 10-WFBGA | 1.5mm | 1μA | 10 | 6V | 1.8V | 400mOhm | 10 | yes | VIDEO APPLICATION | No | 2 | 1nA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | YES | 457mW | BOTTOM | BALL | 260 | 3V | 0.5mm | 10 | 1 | 40 | Multiplexer or Switches | 3V | 2 | 82 ns | 73 ns | Single | SEPARATE OUTPUT | 400mOhm | 69 dB | 0.05Ohm | BREAK-BEFORE-MAKE | 78ns | 90ns | 2:1 | 2.7V~3.3V | SPDT | 2nA | 145pF | 82ns, 73ns | 21pC | 50m Ω (Max) | -69dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP340PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfp340pbf-datasheets-1883.pdf | 400V | 11A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 550mOhm | 3 | No | 1 | Single | 150W | 1 | TO-247-3 | 1.4nF | 14 ns | 27ns | 24 ns | 50 ns | 11A | 20V | 400V | 4V | 150W Tc | 550mOhm | 400V | N-Channel | 1400pF @ 25V | 4 V | 550mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 62nC @ 10V | 550 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SJM185BEA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIHS36N50D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sihs36n50de3-datasheets-2207.pdf | TO-247-3 | 16.1mm | 20.8mm | 5.3mm | 3 | 8 Weeks | 38.000013g | Unknown | 247 | No | 1 | Single | 446W | 1 | R-PSIP-T3 | 33 ns | 89ns | 68 ns | 79 ns | 36A | 30V | SILICON | SWITCHING | 500V | 500V | 3V | 446W Tc | TO-274AA | 332 mJ | N-Channel | 3233pF @ 100V | 130m Ω @ 18A, 10V | 5V @ 250μA | 36A Tc | 125nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
9076401EA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP17N50LPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfp17n50lpbf-datasheets-2660.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 280mOhm | 3 | No | 1 | Single | 220W | 1 | TO-247-3 | 2.76nF | 21 ns | 51ns | 28 ns | 50 ns | 16A | 30V | 500V | 5V | 220W Tc | 320mOhm | N-Channel | 2760pF @ 25V | 320mOhm @ 9.9A, 10V | 5V @ 250μA | 16A Tc | 130nC @ 10V | 320 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SJM304BCC | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SUP90N06-6M0P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sup90n066m0pe3-datasheets-3582.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 3 | 14 Weeks | 6.000006g | 3 | EAR99 | No | SUP90N06 | 3 | 1 | Single | 3.75W | 1 | FET General Purpose Power | 16 ns | 10ns | 8 ns | 25 ns | 90A | 20V | 60V | SILICON | SWITCHING | 3.75W Ta 272W Tc | TO-220AB | 240A | 0.006Ohm | 60V | N-Channel | 4700pF @ 30V | 6m Ω @ 20A, 10V | 4.5V @ 250μA | 90A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG2720DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 2μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2720dnt1e4-datasheets-4490.pdf | 10-UFQFN | 1.8mm | 550μm | 1.4mm | 3V | 620MHz | Lead Free | 10 | 14 Weeks | 7.002332mg | 4.3V | 2.6V | 7Ohm | 10 | yes | unknown | 1 | 2μA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 208mW | QUAD | NO LEAD | 260 | 3V | DG2720 | 10 | 1 | 40 | 208mW | Multiplexer or Switches | 3V | 2 | Not Qualified | 480 Mbps | 30 ns | 25 ns | Single | 4 | 7Ohm | 30 dB | 0.35Ohm | BREAK-BEFORE-MAKE | 2:2 | 2.6V~4.3V | DPDT | 100nA | 4pF | 30ns, 25ns | 0.5pC | 350m Ω | -49dB @ 240MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIHF22N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihf22n60ee3-datasheets-6204.pdf | TO-220-3 Full Pack | Lead Free | 3 | 14 Weeks | 6.000006g | Unknown | 180mOhm | 3 | yes | No | 1 | Single | 35W | 1 | 18 ns | 27ns | 35 ns | 66 ns | 21A | 20V | SILICON | SWITCHING | 2V | 35W Tc | TO-220AB | 56A | 600V | N-Channel | 1920pF @ 100V | 180m Ω @ 11A, 10V | 4V @ 250μA | 21A Tc | 86nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG411HSDY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2012 | /files/vishaysiliconix-dg412hsdy-datasheets-7860.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 547.485991mg | 44V | 13V | 80Ohm | 16 | no | unknown | 4 | e0 | TIN LEAD | 600mW | GULL WING | 240 | 15V | 1.27mm | DG411 | 16 | 1 | 30 | 600mW | Multiplexer or Switches | Not Qualified | SPST | 105 ns | 105 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 35Ohm | 91 dB | BREAK-BEFORE-MAKE | 90ns | NC | 12V ±5V~20V | 1:1 | SPST - NC | 250pA | 12pF 12pF | 105ns, 80ns | 22pC | -88dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP26N60LPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfp26n60lpbf-datasheets-4818.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 250MOhm | 3 | No | 1 | Single | 470W | 1 | TO-247-3 | 5.02nF | 31 ns | 110ns | 42 ns | 47 ns | 26A | 30V | 600V | 5V | 470W Tc | 210mOhm | 600V | N-Channel | 5020pF @ 25V | 5 V | 250mOhm @ 16A, 10V | 5V @ 250μA | 26A Tc | 180nC @ 10V | 250 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG612DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | NMOS | -1μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg612dyt1-datasheets-2726.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 665.986997mg | 18V | 10V | 45Ohm | 16 | yes | VIDEO APPLICATION | No | 4 | e3 | Matte Tin (Sn) | 600mW | GULL WING | 260 | 15V | 1.27mm | DG612 | 16 | 1 | 40 | 600mW | Multiplexer or Switches | 15-3V | 500MHz | SPST | 50 ns | 35 ns | 15V | Dual, Single | 10V | -3V | 4 | SEPARATE OUTPUT | 45Ohm | 74 dB | 2Ohm | BREAK-BEFORE-MAKE | NO | 10V~18V ±10V~15V | 1:1 | SPST - NO | 250pA | 3pF 2pF | 35ns, 25ns | 4pC | 2 Ω | -87dB @ 5MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIHU2N80E-GE3 | Vishay Siliconix | $1.32 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihu2n80ege3-datasheets-7575.pdf | TO-251-3 Long Leads, IPak, TO-251AB | 9.78mm | 18 Weeks | 1 | 62.5W | 150°C | IPAK (TO-251) | 11 ns | 19 ns | 2.8A | 30V | 800V | 62.5W Tc | 2.38Ohm | 800V | N-Channel | 315pF @ 100V | 2.75Ohm @ 1A, 10V | 4V @ 250μA | 2.8A Tc | 19.6nC @ 10V | 10V | ±30V |
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