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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | JESD-609 Code | Feature | Terminal Finish | Applications | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Differential Output | Input Characteristics | Receiver Number of Bits | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Threshold Voltage | Number of Transmitters | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Driver Number of Bits | Protocol | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-on Time-Max | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Number of Drivers/Receivers | Duplex | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI4412ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4412adyt1ge3-datasheets-6274.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | Single | 30 | 2.5W | 1 | 15 ns | 6ns | 10 ns | 26 ns | 5.8A | 20V | SILICON | 1.3W Ta | MS-012AA | 30A | 0.024Ohm | 30V | N-Channel | 24m Ω @ 8A, 10V | 1V @ 250μA (Min) | 5.8A Ta | 20nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9241AEY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Transceiver | Surface Mount | Surface Mount | -40°C~125°C | Tape & Reel (TR) | 1 (Unlimited) | BCDMOS | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si9241aeyt1e3-datasheets-6015.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 3.9mm | 142.994995mg | 8 | EAR99 | No | 1 | e0 | TIN LEAD | 4.5V~5.5V | DUAL | GULL WING | 240 | 5V | SI9241 | 8 | 30 | NO | SCHMITT TRIGGER | 1 | 1 | 1 | ISO 9141 | 1/1 | Half | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4660DY-T1-E3 | Vishay Siliconix | $0.11 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4660dyt1ge3-datasheets-0598.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | Single | 30 | FET General Purpose Power | R-PDSO-G8 | 25 ns | 14ns | 22 ns | 95 ns | 17.2A | 16V | 25V | 3.1W Ta 5.6W Tc | 23.1A | N-Channel | 2410pF @ 15V | 5.8m Ω @ 15A, 10V | 2.2V @ 250μA | 23.1A Tc | 45nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2592DN1-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-dg2592dnt1ge4-datasheets-0045.pdf | 10-UFQFN | 19 Weeks | unknown | Audio | NOT SPECIFIED | 1 | NOT SPECIFIED | 1.6V~5.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4354DY-T1-E3 | Vishay Siliconix | $14.02 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4354dyt1ge3-datasheets-6331.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | Single | 40 | 2.5W | 1 | 8 ns | 10ns | 9 ns | 28 ns | 9.5A | 12V | SILICON | SWITCHING | 2.5W Ta | 30V | N-Channel | 16.5m Ω @ 9.5A, 10V | 1.6V @ 250μA | 9.5A Ta | 10.5nC @ 4.5V | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG542DY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | NMOS | 3.5mA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg541dyt1e3-datasheets-2568.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | 500MHz | Lead Free | 6mA | 16 | 200.686274mg | 18V | 10V | 60Ohm | 16 | yes | No | 2 | e3 | RGB, T-Switch Configuration | Matte Tin (Sn) | Video | 640mW | GULL WING | 260 | 15V | 1.27mm | DG542 | 16 | 1 | 40 | 640mW | Multiplexer or Switches | 15-3V | 100 ns | 60 ns | 15V | 12V | Dual, Single | 10V | -3V | 4 | 60Ohm | 75 dB | 2Ohm | BREAK-BEFORE-MAKE | 3V~15V ±3V~15V | 1:1 | SPST | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4880DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4880dyt1e3-datasheets-6423.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | No | DUAL | GULL WING | Single | 1 | FET General Purpose Powers | R-PDSO-G8 | 14 ns | 9ns | 30 ns | 46 ns | 13A | 25V | SILICON | SWITCHING | 2.5W Ta | 50A | 0.0085Ohm | 30V | N-Channel | 8.5m Ω @ 13A, 10V | 1.8V @ 250μA | 25nC @ 5V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG884DN | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | 1.5mA | Non-RoHS Compliant | 2007 | /files/vishaysiliconix-dg884dne3-datasheets-2592.pdf | 44-LCC (J-Lead) | 15V | 300MHz | 44 | 2.386605g | 90Ohm | 44 | no | No | 1 | e0 | T-Switch Configuration | Tin/Lead (Sn/Pb) | Video | QUAD | J BEND | 44 | 1 | CROSS POINT SWITCH | Multiplexer or Switches | Dual, Single | 90Ohm | BREAK-BEFORE-MAKE | 300ns | 8:4 | 13V~20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6466ADQ-T1-GE3 | Vishay Siliconix | $0.71 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si6466adqt1ge3-datasheets-6466.pdf | 8-TSSOP (0.173, 4.40mm Width) | Lead Free | 8 | Unknown | 14MOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | Single | 30 | 1.05W | 1 | FET General Purpose Power | 27 ns | 34ns | 34 ns | 76 ns | 8.1A | 8V | SILICON | -450mV | 1.05W Ta | 20V | N-Channel | -450 mV | 14m Ω @ 8.1A, 4.5V | 450mV @ 250μA (Min) | 6.8A Ta | 27nC @ 5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5902BDC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si5902bdct1e3-datasheets-1153.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | Lead Free | 14 Weeks | 84.99187mg | 65mOhm | 8 | No | 3.12W | SI5902 | 2 | Dual | 1.5W | 2 | 1206-8 ChipFET™ | 220pF | 4 ns | 12ns | 12 ns | 10 ns | 4A | 20V | 30V | 3.12W | 65mOhm | 2 N-Channel (Dual) | 220pF @ 15V | 65mOhm @ 3.1A, 10V | 3V @ 250μA | 4A Tc | 7nC @ 10V | Logic Level Gate | 65 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7156DP-T1-E3 | Vishay Siliconix | $3.67 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7156dpt1e3-datasheets-6505.pdf | PowerPAK® SO-8 | 8 | Single | 5.4W | 1 | PowerPAK® SO-8 | 6.9nF | 32ns | 25 ns | 56 ns | 29A | 20V | 40V | 5.4W Ta 83W Tc | 3.5mOhm | 40V | N-Channel | 6900pF @ 20V | 3.5mOhm @ 20A, 10V | 3V @ 250μA | 50A Tc | 155nC @ 10V | 3.5 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4284EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | /files/vishaysiliconix-sq4284eyt1ge3-datasheets-1902.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 506.605978mg | 8 | 3.9W | 2 | Dual | 3.9W | 2 | 8-SO | 2.2nF | 10 ns | 40ns | 11 ns | 32 ns | 8A | 20V | 40V | 3.9W | 13.5mOhm | 2 N-Channel (Dual) | 2200pF @ 25V | 13.5mOhm @ 7A, 10V | 2.5V @ 250μA | 45nC @ 10V | Logic Level Gate | 13.5 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5481DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5481dut1e3-datasheets-8531.pdf | PowerPAK® ChipFET™ Single | 3mm | 750μm | 1.9mm | 3 | 8 | EAR99 | DUAL | NO LEAD | NOT SPECIFIED | 8 | 1 | Single | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-XDSO-N3 | 6 ns | 25ns | 167 ns | 90 ns | 12A | 8V | SILICON | DRAIN | SWITCHING | 20V | 3.1W Ta 17.8W Tc | 20A | 0.022Ohm | -20V | P-Channel | 1610pF @ 10V | 22m Ω @ 6.5A, 4.5V | 1V @ 250μA | 12A Tc | 50nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4559ADY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4559adyt1e3-datasheets-2899.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 120mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2W | GULL WING | 260 | SI4559 | 8 | 2 | Dual | 30 | 2W | 2 | Other Transistors | 30 ns | 70ns | 30 ns | 40 ns | 4.5A | 20V | 60V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1V | 3.1W 3.4W | 4.3A | 6.1 mJ | 60V | N and P-Channel | 665pF @ 15V | 58m Ω @ 4.3A, 10V | 3V @ 250μA | 5.3A 3.9A | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7407DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7407dnt1ge3-datasheets-6592.pdf | PowerPAK® 1212-8 | 12mOhm | Single | 1.5W | PowerPAK® 1212-8 | 200 ns | 9.9A | 8V | 12V | 1.5W Ta | 12mOhm | 12V | P-Channel | 12mOhm @ 15.6A, 4.5V | 1V @ 400μA | 9.9A Ta | 59nC @ 4.5V | 12 mΩ | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4936BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4936bdyt1ge3-datasheets-1205.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 35mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2W | GULL WING | 260 | SI4936 | 8 | 2 | Dual | 40 | 2W | 2 | FET General Purpose Power | 5 ns | 25ns | 25 ns | 12 ns | 6.9A | 20V | 30V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 3V | 2.8W | 30A | 30V | 2 N-Channel (Dual) | 530pF @ 15V | 3 V | 35m Ω @ 5.9A, 10V | 3V @ 250μA | 15nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7413DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7413dnt1e3-datasheets-6150.pdf | PowerPAK® 1212-8 | 5 | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1 | Other Transistors | S-XDSO-C5 | 30 ns | 50ns | 50 ns | 200 ns | 8.4A | 8V | SILICON | DRAIN | SWITCHING | 20V | 20V | 1.5W Ta | 30A | 0.015Ohm | P-Channel | 15m Ω @ 13.2A, 4.5V | 1V @ 400μA | 8.4A Ta | 51nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA929DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia929djt1ge3-datasheets-5811.pdf | PowerPAK® SC-70-6 Dual | 6 | 14 Weeks | 28.009329mg | 6 | EAR99 | No | 1.9W | 6 | 2 | Dual | 1.9W | 1 | Other Transistors | 5 ns | 10ns | 10 ns | 22 ns | 4.3A | 12V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 7.8W | 4.5A | -30V | 2 P-Channel (Dual) | 575pF @ 15V | 64m Ω @ 3A, 10V | 1.1V @ 250μA | 4.5A Tc | 21nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7382DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si7382dpt1e3-datasheets-6112.pdf | PowerPAK® SO-8 | 5 | 506.605978mg | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1 | R-XDSO-C5 | 18 ns | 16ns | 20 ns | 67 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1.8W Ta | 50A | 0.0047Ohm | 45 mJ | N-Channel | 4.7m Ω @ 24A, 10V | 3V @ 250μA | 14A Ta | 40nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ958EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj958ept1ge3-datasheets-7120.pdf | PowerPAK® SO-8 Dual | 1.267mm | 12 Weeks | EAR99 | unknown | NOT SPECIFIED | 2 | NOT SPECIFIED | 35W | 175°C | 5 ns | 18 ns | 20A | 20V | 60V | 2 N-Channel (Dual) | 1075pF @ 30V | 34.9m Ω @ 4.5A, 10V | 2.5V @ 250μA | 20A Tc | 23nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6443DQ-T1-E3 | Vishay Siliconix | $0.41 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si6443dqt1e3-datasheets-7408.pdf | 8-TSSOP (0.173, 4.40mm Width) | Lead Free | 12MOhm | 8 | Single | 1.5W | 1 | 8-TSSOP | 21ns | 68 ns | 115 ns | 7.3A | 20V | 30V | 1.05W Ta | 12mOhm | 30V | P-Channel | 12mOhm @ 8.8A, 10V | 3V @ 250μA | 7.3A Ta | 60nC @ 5V | 12 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ952EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqj952ept1ge3-datasheets-7856.pdf | PowerPAK® SO-8 Dual | Lead Free | 12 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 60V | 25W Tc | 2 N-Channel (Dual) | 1800pF @ 30V | 20m Ω @ 10.3A, 10V | 2.5V @ 250μA | 23A Tc | 30nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3475DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si3475dvt1e3-datasheets-8173.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 1.61Ohm | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | 3.2W | DUAL | GULL WING | 260 | 6 | Single | 30 | 2W | 2 | Other Transistors | 29ns | 14 ns | 23 ns | 750mA | 20V | 0.95A | 200V | P-Channel | 500pF @ 50V | 1.61 Ω @ 900mA, 10V | 4V @ 250μA | 950mA Tc | 18nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ1922AEEH-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sq1922aeeht1ge3-datasheets-9933.pdf | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | SC-70-6 | 20V | 1.5W Tc | 2 N-Channel (Dual) | 60pF @ 10V | 300mOhm @ 400mA, 4.5V | 2.5V @ 250μA | 850mA Tc | 1.2nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4620DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4620dyt1e3-datasheets-8539.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 186.993455mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | 30 | 2W | 1 | 16 ns | 36ns | 17 ns | 21 ns | 6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2W Ta 3.1W Tc | 6A | 40A | 0.035Ohm | 30V | N-Channel | 1040pF @ 15V | 35m Ω @ 6A, 10V | 2.5V @ 250μA | 6A Ta 7.5A Tc | 13nC @ 10V | Schottky Diode (Isolated) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4922BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si4922bdyt1e3-datasheets-5484.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 186.993455mg | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 2W | GULL WING | 260 | SI4922 | 8 | 2 | Dual | 30 | 2W | 2 | 13 ns | 53ns | 54 ns | 68 ns | 8A | 12V | SILICON | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 3.1W | 8A | 2 N-Channel (Dual) | 2070pF @ 15V | 1.8 V | 16m Ω @ 5A, 10V | 1.8V @ 250μA | 62nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4487DY-T1-GE3 | Vishay Siliconix | $2.10 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4487dyt1ge3-datasheets-2217.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 15 Weeks | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | 30 | 2.5W | 1 | 9 ns | 8ns | 10 ns | 28 ns | 8.2A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 2.5W Ta 5W Tc | 0.0205Ohm | -30V | P-Channel | 1075pF @ 15V | 20.5m Ω @ 10A, 10V | 2.5V @ 250μA | 11.6A Tc | 36nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5935CDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si5935cdct1e3-datasheets-1877.pdf | 8-SMD, Flat Lead | 3.1mm | 1.1mm | 1.7mm | Lead Free | 8 | 14 Weeks | 84.99187mg | No SVHC | 100MOhm | 8 | yes | EAR99 | Tin | No | e4 | Silver (Ag) | 3.1W | C BEND | 260 | SI5935 | 8 | Dual | 30 | 1.3W | 2 | Other Transistors | 10 ns | 32ns | 6 ns | 25 ns | 3.1A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -1V | 4A | 2 P-Channel (Dual) | 455pF @ 10V | 100m Ω @ 3.1A, 4.5V | 1V @ 250μA | 4A | 11nC @ 5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIE836DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie836dft1ge3-datasheets-2516.pdf | 10-PolarPAK® (SH) | 4 | 10 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | 260 | 10 | Single | 30 | 5.2W | 1 | FET General Purpose Power | R-PDSO-N4 | 15 ns | 10ns | 10 ns | 20 ns | 4.1A | 30V | SILICON | DRAIN SOURCE | SWITCHING | 5.2W Ta 104W Tc | 18.3A | 15A | 0.13Ohm | 1.25 mJ | 200V | N-Channel | 1200pF @ 100V | 130m Ω @ 4.1A, 10V | 4.5V @ 250μA | 18.3A Tc | 41nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ9945BEY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq9945beyt1ge3-datasheets-4115.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 12 Weeks | 506.605978mg | Unknown | 64mOhm | 8 | No | 4W | 2 | Dual | 8-SO | 470pF | 6 ns | 2.8ns | 1.7 ns | 17 ns | 5.4A | 20V | 60V | 2V | 4W | 64mOhm | 60V | 2 N-Channel (Dual) | 470pF @ 25V | 64mOhm @ 3.4A, 10V | 2.5V @ 250μA | 5.4A | 12nC @ 10V | Logic Level Gate | 64 mΩ |
