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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Screening Level | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Threshold Voltage | Power - Max | Power Dissipation-Max | Recovery Time | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| DG4053EEY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1.75mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg4053eeqt1ge3-datasheets-7535.pdf | 16-SOIC (0.154, 3.90mm Width) | 9.9mm | 16 | 18 Weeks | 78Ohm | 16 | unknown | 3 | e3 | MATTE TIN | YES | DUAL | GULL WING | NOT SPECIFIED | 5V | 1.27mm | 1 | NOT SPECIFIED | 3 | 930MHz | -5V | 78Ohm | 49 dB | 0.91Ohm | 97ns | 86ns | 3V~16V ±3V~8V | 2:1 | SPDT | 1nA | 2pF 3.1pF | 75ns, 88ns | 0.3pC | 910m Ω | -105dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5905BDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5905bdct1ge3-datasheets-2307.pdf | 8-SMD, Flat Lead | 3.1W | SI5905 | 1206-8 ChipFET™ | 350pF | 4A | 8V | 3.1W | 2 P-Channel (Dual) | 350pF @ 4V | 80mOhm @ 3.3A, 4.5V | 1V @ 250μA | 4A | 11nC @ 8V | Logic Level Gate | 80 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2517EDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2517edqt1ge3-datasheets-6857.pdf | 10-TFSOP, 10-MSOP (0.118, 3.00mm Width) | 19 Weeks | unknown | 2 | 221MHz | 3.1Ohm | 2:1 | 1.8V~5.5V | SPDT | 40ns, 33ns | -19.4pC | 10m Ω | -62dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6966DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6966dqt1ge3-datasheets-2331.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | 157.991892mg | 8 | 830mW | SI6966 | 2 | Dual | 830mW | 2 | 8-TSSOP | 11 ns | 9ns | 11 ns | 36 ns | 4.5A | 12V | 20V | 830mW | 30mOhm | 2 N-Channel (Dual) | 30mOhm @ 4.5A, 4.5V | 1.4V @ 250μA | 4A | 20nC @ 4.5V | Logic Level Gate | 30 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG3536DB-T5-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1nA | 0.753mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg3536dbt5e1-datasheets-8351.pdf | 10-WFBGA | 1.5mm | 1μA | 10 | 21 Weeks | 6V | 1.8V | 400mOhm | 10 | yes | VIDEO APPLICATION | No | 2 | 1nA | e1 | TIN SILVER COPPER | 457mW | BOTTOM | BALL | 260 | 3V | 0.5mm | DG3536 | 10 | 1 | 40 | Multiplexer or Switches | 3V | 2 | 82 ns | 73 ns | Single | SEPARATE OUTPUT | 400mOhm | 69 dB | 0.05Ohm | BREAK-BEFORE-MAKE | 78ns | 90ns | 2:1 | 2.7V~3.3V | SPDT | 2nA | 145pF | 82ns, 73ns | 21pC | 50m Ω (Max) | -69dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7214DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7214dnt1e3-datasheets-4713.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | 6 | Unknown | 8 | yes | EAR99 | Tin | No | e3 | 1.3W | C BEND | 260 | SI7214 | 8 | Dual | 30 | 1.3W | 2 | FET General Purpose Powers | R-XDSO-C6 | 7 ns | 10ns | 6 ns | 19 ns | 5.9A | 20V | SILICON | DRAIN | METAL-OXIDE SEMICONDUCTOR | 3V | 4.6A | 0.04Ohm | 30V | 2 N-Channel (Dual) | 40m Ω @ 6.4A, 10V | 3V @ 250μA | 4.6A | 6.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG309BDQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg308bdye3-datasheets-1370.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | 1μA | 16 | 15 Weeks | 172.98879mg | 44V | 4V | 160Ohm | 16 | yes | No | 4 | e3 | Matte Tin (Sn) | 640mW | GULL WING | 260 | 15V | 0.65mm | DG309 | 16 | 1 | 40 | Multiplexer or Switches | +-15/12V | 4 | SPST | 200 ns | 150 ns | 22V | Dual, Single | 4V | -15V | SEPARATE OUTPUT | 85Ohm | 90 dB | 1.7Ohm | BREAK-BEFORE-MAKE | NC | 4V~44V ±4V~22V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 200ns, 150ns | 1pC | 1.7 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ9945AEY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sq9945aeyt1e3-datasheets-2411.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 186.993455mg | 8 | 1.7W | 2 | 1.7W | 2 | 8-SO | 9 ns | 10ns | 10 ns | 21 ns | 3.7A | 20V | 60V | 2.4W | 80mOhm | 60V | 2 N-Channel (Dual) | 80mOhm @ 3.7A, 10V | 3V @ 250μA | 3.7A | 20nC @ 10V | Logic Level Gate | 80 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG442LDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | 85°C | -40°C | 10μA | ROHS3 Compliant | 2007 | /files/vishay-dg442ldje3-datasheets-2470.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 100μA | 49 Weeks | 1.627801g | 12V | 2.7V | 35Ohm | 16 | DG442 | 4 | 4 | 16-DIP | 280MHz | SPST | 136 ns | 100 ns | 6V | 5V | Dual, Single | 3V | 4 | 4 | 30Ohm | 2.7V~12V ±3V~6V | 1:1 | SPST - NO | 1nA | 5pF 6pF | 60ns, 35ns | 5pC | 100mOhm | -95dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7964DP-T1-GE3 | Vishay Siliconix | $1.47 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7964dpt1e3-datasheets-4803.pdf | PowerPAK® SO-8 Dual | 6 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.4W | C BEND | 260 | SI7964 | 8 | Dual | 30 | 1.4W | 2 | FET General Purpose Powers | R-XDSO-C6 | 20 ns | 15ns | 15 ns | 50 ns | 6.1A | 20V | SILICON | DRAIN | 60V | METAL-OXIDE SEMICONDUCTOR | 40A | 0.023Ohm | 31 mJ | 60V | 2 N-Channel (Dual) | 23m Ω @ 9.6A, 10V | 4.5V @ 250μA | 65nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG308BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | 1.75mm | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg308bdye3-datasheets-1370.pdf | 16-SOIC (0.154, 3.90mm Width) | 9.9mm | 3.9mm | Lead Free | 1μA | 16 | 13 Weeks | Unknown | 44V | 4V | 160Ohm | 16 | yes | 4 | 1μA | e3 | Matte Tin (Sn) | 640mW | GULL WING | 260 | 15V | 1.27mm | DG308 | 16 | 1 | 40 | 640mW | Multiplexer or Switches | +-15/12V | Not Qualified | SPST | 200 ns | 150 ns | 22V | Dual, Single | 4V | -15V | 4 | SEPARATE OUTPUT | 85Ohm | 85Ohm | 90 dB | 1.7Ohm | BREAK-BEFORE-MAKE | NO | 4V~44V ±4V~22V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 200ns, 150ns | 1pC | 1.7 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISA18ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sisa18adnt1ge3-datasheets-3655.pdf | PowerPAK® 1212-8 | 5 | 14 Weeks | Unknown | 8 | EAR99 | No | DUAL | C BEND | Single | 19.8W | 1 | FET General Purpose Power | S-PDSO-C5 | 10ns | 7 ns | 15 ns | 38.3A | -16V | SILICON | DRAIN | SWITCHING | 1.2V | 3.2W Ta 19.8W Tc | 70A | 0.0075Ohm | 5 mJ | 30V | N-Channel | 1000pF @ 15V | 7.5m Ω @ 10A, 10V | 2.4V @ 250μA | 38.3A Tc | 21.5nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG401DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 5μA | 1.75mm | ROHS3 Compliant | 2012 | /files/vishaysiliconix-dg403dje3-datasheets-0863.pdf | 16-SOIC (0.154, 3.90mm Width) | 9.9mm | 3.9mm | 1μA | 16 | 13 Weeks | 665.986997mg | 44V | 25V | 55Ohm | 16 | yes | unknown | 2 | e3 | Matte Tin (Sn) | 600mW | GULL WING | 260 | 15V | DG401 | 16 | 1 | 30 | Multiplexer or Switches | 2 | Not Qualified | SPST | 150 ns | 100 ns | 22V | 15V | Dual, Single | 7V | -15V | SEPARATE OUTPUT | 45Ohm | 72 dB | 3Ohm | BREAK-BEFORE-MAKE | NO | 1:1 | SPST - NO | ±15V | 500pA | 12pF 12pF | 150ns, 100ns | 60pC | -94.8dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2328DS-T1-GE3 | Vishay Siliconix | $2.81 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si2328dst1ge3-datasheets-5062.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 730mW | 1 | FET General Purpose Powers | 7 ns | 11ns | 10 ns | 9 ns | 1.15A | 20V | SILICON | 100V | 4V | 730mW Ta | 0.25Ohm | N-Channel | 250m Ω @ 1.5A, 10V | 4V @ 250μA | 1.15A Ta | 5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG405BDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1mA | ROHS3 Compliant | 2008 | /files/vishaysiliconix-dg403bdye3-datasheets-4860.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 15V | 500μA | 16 | 10 Weeks | 1.627801g | 36V | 13V | 55Ohm | 16 | yes | unknown | 2 | e3 | Matte Tin (Sn) | 450mW | NOT SPECIFIED | 15V | DG405 | 16 | 2 | DPST | NOT SPECIFIED | 450mW | Multiplexer or Switches | Not Qualified | SPST | 150 ns | 100 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | 45Ohm | 72 dB | 3Ohm | BREAK-BEFORE-MAKE | NO | 1:1 | SPST - NO | ±15V | 500pA | 12pF 12pF | 150ns, 100ns | 60pC | -94.8dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4542DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4542dyt1ge3-datasheets-2215.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 25mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2W | GULL WING | 260 | SI4542 | 8 | Dual | 30 | 2W | 2 | Other Transistors | 10ns | 25 ns | 55 ns | 5.7A | 20V | SILICON | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 6.9A | 40A | 30V | N and P-Channel | 25m Ω @ 6.9A, 10V | 1V @ 250μA (Min) | 50nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2539DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 2μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg2537dqt1ge3-datasheets-8535.pdf | 10-TFSOP, 10-MSOP (0.118, 3.00mm Width) | 3mm | 950μm | 3.1mm | 2μA | 10 | 143.193441mg | Unknown | 4.3V | 1.25V | 4.5Ohm | 10 | No | 2 | 320mW | GULL WING | 3V | 0.5mm | DG2539 | 10 | 1 | Multiplexer or Switches | 2 | 366MHz | SPST | 35 ns | 20 ns | 2.75V | 2.5V | Dual, Single | 1.25V | SEPARATE OUTPUT | 4.5Ohm | 67 dB | 0.3Ohm | BREAK-BEFORE-MAKE | 40ns | 55ns | 2.6V~4.3V ±2.5V | 1:1 | SPST - NO/NC | 250pA | 8pF 9pF | 30ns, 35ns | 2.2pC | 200m Ω | -90dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VQ3001P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-vq3001pe3-datasheets-6145.pdf | 15 Weeks | 14 | No | 2W | 2W | 4 | 110pF | 600mA | 20V | 30V | 2W | 2 N and 2 P-Channel | 110pF @ 15V | 1Ohm @ 1A, 12V | 2.5V @ 1mA | 850mA 600mA | Standard | 1 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG442DY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg442dyt1-datasheets-7418.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 100μA | 16 | 8 Weeks | 665.986997mg | 36V | 13V | 85Ohm | 16 | no | No | 4 | 900mW | GULL WING | 240 | 15V | 1.27mm | DG442 | 16 | 1 | 30 | 900mW | Multiplexer or Switches | 250 ns | 120 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 85Ohm | 60 dB | 4Ohm | BREAK-BEFORE-MAKE | 210ns | NO | 12V ±15V | 1:1 | SPST - NO | 500pA | 4pF 4pF | 250ns, 210ns | -1pC | 4 Ω (Max) | -100dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQS840CENW-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqs840cenwt1ge3-datasheets-7202.pdf | PowerPAK® 1212-8W | 12 Weeks | PowerPAK® 1212-8W | 40V | 33W Tc | N-Channel | 1031pF @ 20V | 20mOhm @ 7.5A, 10V | 2.5V @ 250μA | 12A Tc | 22.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG409DJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2012 | /files/vishaysiliconix-dg409dj-datasheets-7506.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 36V | Lead Free | 500μA | 16 | 8 Weeks | 1.627801g | 44V | 13V | 100Ohm | 16 | no | unknown | 1 | e0 | Tin/Lead (Sn/Pb) | 450mW | 16 | 4 | DIFFERENTIAL MULTIPLEXER | 450mW | Multiplexer or Switches | 2 | Not Qualified | 4PST | 150 ns | 150 ns | 20V | 15V | Dual, Single | 5V | 8 | 100Ohm | 40Ohm | BREAK-BEFORE-MAKE | 12V ±5V~20V | 4:1 | SP4T | 500pA | 3pF 14pF | 150ns, 150ns | 20pC | 15 Ω (Max) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA108DJ-T1-GE3 | Vishay Siliconix | $0.74 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia108djt1ge3-datasheets-8037.pdf | PowerPAK® SC-70-6 | 14 Weeks | PowerPAK® SC-70-6 Single | 80V | 3.5W Ta 19W Tc | N-Channel | 545pF @ 40V | 38mOhm @ 4A, 10V | 4V @ 250μA | 6.6A Ta 12A Tc | 13nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG419DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 30mA | Non-RoHS Compliant | 2000 | /files/vishaysiliconix-dg417dyt1e3-datasheets-1245.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Contains Lead | 1μA | 8 | 540.001716mg | No SVHC | 36V | 13V | 35Ohm | 8 | no | No | 1 | 1nA | e0 | Tin/Lead (Sn/Pb) | 400mW | GULL WING | 8 | 400mW | Multiplexer or Switches | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | 2 | 1 | 35Ohm | 35Ohm | BREAK-BEFORE-MAKE | 12V ±15V | 2:1 | SPDT | 250pA | 8pF 8pF | 175ns, 145ns | 60pC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ2310ES-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq2310est1ge3-datasheets-8489.pdf | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | TO-236 | 20V | 2W Tc | 24mOhm | N-Channel | 485pF @ 10V | 30mOhm @ 5A, 4.5V | 1V @ 250μA | 6A Tc | 8.5nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG184AP | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg183bp-datasheets-7574.pdf | 16-DIP (0.300, 7.62mm) | 21.08mm | 3.05mm | 7.87mm | 15V | 3mA | 16 | 12 Weeks | 1.627801g | 30Ohm | 16 | no | Yes | unknown | 2 | e0 | Tin/Lead (Sn/Pb) | NO | 900mW | 16 | Multiplexer or Switches | 2 | Not Qualified | 150 ns | 130 ns | 18V | 15V | Dual | 10V | SEPARATE OUTPUT | 30Ohm | 30Ohm | BREAK-BEFORE-MAKE | NO | 2:1 | DPST - NO | ±15V | 1nA | 9pF 6pF | 150ns, 130ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD08P06-155L-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sud08p06155lge3-datasheets-0188.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 14 Weeks | yes | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | SUD08P06 | 4 | NOT SPECIFIED | 1 | Other Transistors | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 1.7W Ta 20.8W Tc | 8.2A | 18A | 0.155Ohm | 7.2 mJ | P-Channel | 450pF @ 25V | 155m Ω @ 5A, 10V | 3V @ 250μA | 8.4A Tc | 19nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG187AA/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg186ap883-datasheets-7590.pdf | TO-100-10 Metal Can | 10 | 30Ohm | 10 | no | Yes | 1 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | 10 | 450mW | Multiplexer or Switches | 1 | Not Qualified | 38535Q/M;38534H;883B | 18V | 10V | 2 | 30Ohm | BREAK-BEFORE-MAKE | 2:1 | SPDT | ±15V | 1nA | 9pF 6pF | 150ns, 130ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7113DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7113dnt1ge3-datasheets-8522.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | 134MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 8 | 1 | Single | 3.7W | 1 | S-PDSO-F5 | 30 ns | 110ns | 40 ns | 51 ns | -13.2A | 20V | SILICON | DRAIN | SWITCHING | 100V | 3.7W Ta 52W Tc | 20A | -100V | P-Channel | 1480pF @ 50V | 134m Ω @ 4A, 10V | 3V @ 250μA | 13.2A Tc | 55nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG213DJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg213dy-datasheets-7631.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 1μA | 16 | 1.627801g | 40V | 3V | 60Ohm | 16 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | 470mW | 16 | 470mW | Multiplexer or Switches | 512/+-15V | 130 ns | 100 ns | 22V | Dual, Single | 3V | 4 | SEPARATE OUTPUT | 60Ohm | BREAK-BEFORE-MAKE | 200ns | 3V~40V ±3V~22V | 1:1 | SPST - NO/NC | 500pA | 5pF 5pF | 130ns, 100ns | 1pC | 1 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF820APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/vishaysiliconix-irf820apbf-datasheets-2338.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 3Ohm | 3 | No | 1 | Single | 50W | 1 | TO-220AB | 340pF | 8.1 ns | 12ns | 13 ns | 16 ns | 2.5A | 30V | 500V | 4.5V | 50W Tc | 500 ns | 3Ohm | N-Channel | 340pF @ 25V | 4.5 V | 3Ohm @ 1.5A, 10V | 4.5V @ 250μA | 2.5A Tc | 17nC @ 10V | 3 Ω | 10V | ±30V |
