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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Polarity | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | High Level Output Current | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| DG411DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 30mA | Non-RoHS Compliant | 2010 | /files/vishaysiliconix-dg413dj-datasheets-7502.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 8 Weeks | 665.986997mg | 36V | 13V | 35Ohm | 16 | no | Lead, Tin | No | 4 | e0 | Tin/Lead (Sn/Pb) | Non-Inverting | 600mW | GULL WING | 1.27mm | 16 | 600mW | Multiplexer or Switches | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | 30mA | 4 | 35Ohm | BREAK-BEFORE-MAKE | 250ns | NC | 5V~44V ±5V~20V | 1:1 | SPST - NC | 250pA | 9pF 9pF | 175ns, 145ns | 5pC | -85dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4447DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/vishaysiliconix-si4447dyt1e3-datasheets-8864.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 54mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.1W | 1 | Other Transistors | 8 ns | 12ns | 12 ns | 74 ns | -4.5A | 16V | SILICON | SWITCHING | 40V | -2.2V | 1.1W Ta | 3.3A | 30A | -40V | P-Channel | 805pF @ 20V | 72m Ω @ 4.5A, 15V | 2.2V @ 250μA | 3.3A Ta | 14nC @ 4.5V | 15V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG200BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg200bdje3-datasheets-2765.pdf | 14-DIP (0.300, 7.62mm) | 19.3mm | 3.81mm | 7.11mm | 15V | 50μA | 14 | 8 Weeks | 1.620005g | Unknown | 36V | 13V | 85Ohm | 14 | no | No | 2 | e0 | Tin/Lead (Sn/Pb) | 470mW | 15V | 14 | 470mW | Multiplexer or Switches | 1 μs | 425 ns | 22V | 15V | Dual | 7V | -15V | 2 | SEPARATE OUTPUT | 85Ohm | 70Ohm | BREAK-BEFORE-MAKE | 1000ns | NC | 1:1 | SPST - NC | ±15V | 2nA | 5pF 5pF | 300ns, 200ns | 1pC | -95dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9014TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfr9014trpbf-datasheets-0184.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 1.437803g | 500mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | Other Transistors | R-PSSO-G2 | 11 ns | 63ns | 31 ns | 9.6 ns | 5.1A | 20V | SILICON | DRAIN | SWITCHING | 60V | 2.5W Ta 25W Tc | 20A | -60V | P-Channel | 270pF @ 25V | 500m Ω @ 3.1A, 10V | 4V @ 250μA | 5.1A Tc | 12nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG202BAK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-dg201bdyt1e3-datasheets-0360.pdf | 16-CDIP (0.300, 7.62mm) | 50μA | 15 Weeks | 25V | 4.5V | 85Ohm | 16 | No | 900mW | 4 | 16-CERDIP | 300 ns | 200 ns | 22V | Dual, Single | 4.5V | 85Ohm | 85Ohm | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2Ohm | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR826DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sir826dpt1ge3-datasheets-1559.pdf | PowerPAK® SO-8 | Lead Free | 14 Weeks | 506.605978mg | Unknown | 8 | No | 1 | Single | 6.25W | 1 | PowerPAK® SO-8 | 2.9nF | 15 ns | 14ns | 8 ns | 36 ns | 60A | 20V | 80V | 1.2V | 6.25W Ta 104W Tc | 4mOhm | N-Channel | 2900pF @ 40V | 4.8mOhm @ 20A, 10V | 2.8V @ 250μA | 60A Tc | 90nC @ 10V | 4.8 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG213DY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg213dy-datasheets-7631.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 547.485991mg | 40V | 3V | 60Ohm | 16 | no | No | 4 | e0 | TIN LEAD | 640mW | GULL WING | 240 | 15V | 1.27mm | 16 | 1 | 30 | 640mW | Multiplexer or Switches | 512/+-15V | 130 ns | 100 ns | 22V | Dual, Single | 3V | -15V | 4 | SEPARATE OUTPUT | 60Ohm | 90 dB | 1Ohm | BREAK-BEFORE-MAKE | 3V~40V ±3V~22V | 1:1 | SPST - NO/NC | 500pA | 5pF 5pF | 130ns, 100ns | 1pC | 1 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF640SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf640spbf-datasheets-2368.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 8 Weeks | 1.437803g | Unknown | 180mOhm | 3 | EAR99 | AVALANCHE RATED | No | GULL WING | 260 | 4 | 1 | Single | 40 | 130W | 1 | R-PSSO-G2 | 14 ns | 51ns | 36 ns | 45 ns | 18A | 20V | SILICON | DRAIN | SWITCHING | 4V | 3.1W Ta 130W Tc | 72A | 580 mJ | 200V | N-Channel | 1300pF @ 25V | 4 V | 180m Ω @ 11A, 10V | 4V @ 250μA | 18A Tc | 70nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG300BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2005 | /files/vishaysiliconix-dg303bdye3-datasheets-5523.pdf | 14-DIP (0.300, 7.62mm) | 19.3mm | 3.81mm | 7.11mm | 15V | 1mA | 1.620005g | 36V | 13V | 50Ohm | 14 | no | No | 470mW | 14 | 470mW | 150 ns | 130 ns | 22V | 15V | Dual, Single | 7V | 2 | 50Ohm | 50Ohm | 1:1 | SPST - NO | ±15V | 5nA | 14pF 14pF | 150ns, 130ns (Typ) | 8pC | -74dB @ 500kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP50020EL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup50020elge3-datasheets-3779.pdf | TO-220-3 | 3 | 14 Weeks | EAR99 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 120A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 375W Tc | TO-220AB | 300A | 0.0023Ohm | 281 mJ | N-Channel | 11113pF @ 30V | 2.3m Ω @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 126nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG302BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg303bdye3-datasheets-5523.pdf | 14-DIP (0.300, 7.62mm) | 19.3mm | 3.81mm | 7.11mm | 15V | 1mA | 1.620005g | 36V | 13V | 50Ohm | 14 | no | unknown | 470mW | 14 | 470mW | 2 | 150 ns | 130 ns | 22V | 15V | Dual, Single | 7V | 4 | 50Ohm | 50Ohm | 2:1 | DPST - NO | ±15V | 1nA | 14pF 14pF | 300ns, 250ns | 8pC | -74dB @ 500kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ486EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqj486ept1ge3-datasheets-4622.pdf | 8-PowerTDFN | 4 | 12 Weeks | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 75V | 75V | 56W Tc | 30A | 120A | 0.026Ohm | 9 mJ | N-Channel | 1386pF @ 15V | 26m Ω @ 51A, 10V | 2.1V @ 250μA | 30A Tc | 34nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG308BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2014 | /files/vishaysiliconix-dg309bdqt1-datasheets-7732.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 1μA | 16 | 8 Weeks | 1.627801g | Unknown | 44V | 4V | 85Ohm | 16 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | 470mW | 15V | 16 | 470mW | Multiplexer or Switches | +-15V | 200 ns | 150 ns | 22V | Dual, Single | 4V | -15V | 4 | SEPARATE OUTPUT | 85Ohm | 85Ohm | BREAK-BEFORE-MAKE | 300ns | NO | 4V~44V ±4V~22V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 200ns, 150ns | 1pC | 1.7 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4874BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si4874bdyt1e3-datasheets-5760.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 7mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.6W | 1 | FET General Purpose Power | 16 ns | 10ns | 10 ns | 57 ns | 16A | 20V | SILICON | 30V | 30V | 3V | 1.6W Ta | N-Channel | 3230pF @ 15V | 7m Ω @ 16A, 10V | 3V @ 250μA | 12A Ta | 25nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG308ADY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1.75mm | Non-RoHS Compliant | 2008 | /files/vishaysiliconix-dg309dy-datasheets-7535.pdf | 16-SOIC (0.154, 3.90mm Width) | 9.9mm | 3.9mm | 15V | 10μA | 16 | 12 Weeks | 36V | 13V | 100Ohm | 16 | no | No | 4 | 1nA | e3 | Matte Tin (Sn) | 600mW | GULL WING | 15V | 1.27mm | 16 | 1 | 600mW | Multiplexer or Switches | 4 | 200 ns | 150 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 100Ohm | 78 dB | BREAK-BEFORE-MAKE | NO | 1:1 | SPST - NO | ±15V | 11pF 8pF | 200ns, 150ns | -10pC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA20DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sira20dpt1re3-datasheets-7583.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 25V | 6.25W Ta 104W Tc | N-Channel | 10850pF @ 10V | 0.58m Ω @ 20A, 10V | 2.1V @ 250μA | 81.7A Ta 100A Tc | 200nC @ 10V | 4.5V 10V | +16V, -12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG403BDY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg403bdy-datasheets-7786.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | 500μA | 16 | 6 Weeks | 665.986997mg | 36V | 13V | 45Ohm | 16 | no | unknown | 2 | e0 | TIN LEAD | YES | 600mW | GULL WING | 240 | 15V | 1.27mm | 16 | 1 | SPDT | 30 | Multiplexer or Switches | 4 | Not Qualified | 150 ns | 100 ns | 22V | 15V | Dual, Single | 7V | -15V | SEPARATE OUTPUT | 45Ohm | 72 dB | 3Ohm | BREAK-BEFORE-MAKE | 1:1 | SPST - NO/NC | ±15V | 500pA | 12pF 12pF | 150ns, 100ns | 60pC | -94.8dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR692DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir692dpt1re3-datasheets-8661.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 250V | 104W Tc | N-Channel | 1405pF @ 125V | 63m Ω @ 10A, 10V | 4V @ 250μA | 24.2A Tc | 30nC @ 7.5V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG403DY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2008 | /files/vishaysiliconix-dg405dy-datasheets-7457.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | 1μA | 16 | 8 Weeks | 665.986997mg | 36V | 13V | 45Ohm | 16 | no | unknown | 2 | e0 | Tin/Lead (Sn/Pb) | 600mW | GULL WING | 16 | SPDT | 600mW | Multiplexer or Switches | 2 | Not Qualified | 150 ns | 100 ns | 22V | 15V | Dual, Single | 7V | 4 | SEPARATE OUTPUT | 45Ohm | BREAK-BEFORE-MAKE | 5V~34V ±5V~17V | 1:1 | SPST - NO/NC | 500pA | 12pF 12pF | 150ns, 100ns | 60pC | 3 Ω | -90dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9Z14PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | /files/vishaysiliconix-irf9z14pbf-datasheets-0020.pdf | -60V | -6.7A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 500mOhm | 3 | No | 1 | Single | 43W | 1 | TO-220AB | 270pF | 11 ns | 63ns | 31 ns | 10 ns | -6.7A | 20V | 60V | -4V | 43W Tc | 500mOhm | -60V | P-Channel | 270pF @ 25V | -2 V | 500mOhm @ 4A, 10V | 4V @ 250μA | 6.7A Tc | 12nC @ 10V | 500 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG413HSAK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2017 | 16-SOIC (0.154, 3.90mm Width) | 14 Weeks | 35Ohm | 4 | 16-SOIC | 35Ohm | 12V ±5V~20V | 1:1 | SPST - NO/NC | 250pA | 12pF 12pF | 105ns, 80ns | 22pC | -88dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1330EDL-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si1330edlt1e3-datasheets-1598.pdf | SC-70, SOT-323 | 2mm | 1mm | 1.25mm | Lead Free | 3 | 14 Weeks | 124.596154mg | Unknown | 2.5Ohm | 3 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 280mW | 1 | FET General Purpose Powers | 3.8 ns | 4.8ns | 4.8 ns | 12.8 ns | 250mA | 20V | SILICON | SWITCHING | 2V | 280mW Ta | 0.24A | 60V | N-Channel | 2.5 Ω @ 250mA, 10V | 2.5V @ 250μA | 240mA Ta | 0.6nC @ 4.5V | 3V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG411LAK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 16-CDIP (0.300, 7.62mm) | 17Ohm | 4 | 16-CERDIP | 280MHz | 17Ohm | 2.7V~12V ±3V~6V | 1:1 | SPST - NC | 250pA | 5pF 6pF | 19ns, 12ns | 5pC | -95dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS08DN-T1-GE3 | Vishay Siliconix | $0.89 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss08dnt1ge3-datasheets-3236.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S (3.3x3.3) | 25V | 5W Ta 65.7W Tc | N-Channel | 3670pF @ 12.5V | 1.23mOhm @ 15A, 10V | 2.2V @ 250μA | 53.9A Ta 195.5A Tc | 82nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG417AK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Surface Mount | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2005 | 8-SOIC (0.154, 3.90mm Width) | 10.16mm | 3.94mm | 7.62mm | 1μA | 8 | 36V | 13V | 35Ohm | 8 | no | Lead, Tin | 1 | e0 | Tin/Lead (Sn/Pb) | Non-Inverting | 600mW | 2.54mm | 8 | Multiplexer or Switches | 1 | Not Qualified | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | 30mA | 35Ohm | 35Ohm | BREAK-BEFORE-MAKE | NC | 1:1 | SPST - NC | ±15V | 250pA | 8pF 8pF | 175ns, 145ns | 60pC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA62DP-T1-RE3 | Vishay Siliconix | $0.52 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira62dpt1re3-datasheets-3698.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 5.2W Ta 65.7W Tc | N-Channel | 4460pF @ 15V | 1.2mOhm @ 15A, 10V | 2.2V @ 250μA | 51.4A Ta 80A Tc | 93nC @ 10V | 4.5V 10V | +16V, -12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG418LEDY-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-dg419ledqt1ge3-datasheets-7465.pdf | 8-SOIC (0.154, 3.90mm Width) | 19 Weeks | 1 | 8-SO | 9Ohm | 3V~16V ±3V~8V | 1:1 | SPST | 10nA | 11pF 32pF | 40ns, 35ns | 26pC | -72dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR800ADP-T1-GE3 | Vishay Siliconix | $1.47 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir800adpt1re3-datasheets-8055.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 20V | 5W Ta 62.5W Tc | N-Channel | 3415pF @ 10V | 1.35mOhm @ 10A, 10V | 1.5V @ 250μA | 50.2A Ta 177A Tc | 53nC @ 10V | 2.5V 10V | +12V, -8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2733EDN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-dg2733edqt1ge3-datasheets-3597.pdf | 10-VFDFN Exposed Pad | 18 Weeks | 2 | 10-DFN (3x3) | 120MHz | 500mOhm | 2:1 | 1.65V~5.5V | SPDT | 78ns, 58ns | 60mOhm | -90dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR170DP-T1-RE3 | Vishay Siliconix | $1.53 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir170dpt1re3-datasheets-4392.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 100V | 6.25W Ta 104W Tc | N-Channel | 6195pF @ 50V | 4.8mOhm @ 20A, 10V | 2.5V @ 250μA | 23.2A Ta 95A Tc | 140nC @ 10V | 4.5V 10V | ±20V |
