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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI7403BDN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7403bdnt1e3-datasheets-6135.pdf | PowerPAK® 1212-8 | 5 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | Single | 30 | 3.1W | 1 | Other Transistors | S-XDSO-C5 | 5 ns | 51ns | 60 ns | 33 ns | 5.1A | 8V | SILICON | DRAIN | SWITCHING | 3.1W Ta 9.6W Tc | 8A | 20A | 0.074Ohm | 20V | P-Channel | 430pF @ 10V | 74m Ω @ 5.1A, 4.5V | 1V @ 250μA | 8A Tc | 15nC @ 8V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI1926DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si1926dlt1ge3-datasheets-1035.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 14 Weeks | 3 | yes | EAR99 | Tin | No | e3 | 510mW | GULL WING | 260 | 6 | 30 | 2 | FET General Purpose Power | R-PDSO-G6 | 6.5 ns | 12ns | 14 ns | 13 ns | 370mA | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 18.5pF @ 30V | 1.4 Ω @ 340mA, 10V | 2.5V @ 250μA | 1.4nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4484EY-T1-GE3 | Vishay Siliconix | $1.73 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4484eyt1e3-datasheets-8352.pdf | 8-SOIC (0.154, 3.90mm Width) | 506.605978mg | No SVHC | 8 | 1 | Single | 1.8W | 1 | 8-SO | 4.8A | 20V | 100V | 2V | 1.8W Ta | 34mOhm | 100V | N-Channel | 34mOhm @ 6.9A, 10V | 2V @ 250μA (Min) | 4.8A Ta | 30nC @ 10V | 34 mΩ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1024X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si1024xt1ge3-datasheets-3402.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 6 | 14 Weeks | 8.193012mg | Unknown | 700mOhm | 6 | yes | EAR99 | LOW THRESHOLD | Tin | No | e3 | 250mW | FLAT | 260 | SI1024 | 6 | 1 | Dual | 40 | 250mW | 2 | FET General Purpose Power | 600mA | 6V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 450mV | 0.485A | 20V | 2 N-Channel (Dual) | 700m Ω @ 600mA, 4.5V | 900mV @ 250μA | 485mA | 0.75nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| SIR408DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sir408dpt1ge3-datasheets-2568.pdf | PowerPAK® SO-8 | 8 | 506.605978mg | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 1 | FET General Purpose Power | R-XDSO-C8 | 20 ns | 28ns | 11 ns | 30 ns | 21.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 4.8W Ta 44.6W Tc | 50A | 70A | 0.0063Ohm | N-Channel | 1230pF @ 15V | 6.3m Ω @ 20A, 10V | 2.5V @ 250μA | 50A Tc | 33nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SQ4940AEY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sq4940aeyt1ge3-datasheets-4275.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 12 Weeks | 506.605978mg | EAR99 | unknown | 4W | GULL WING | NOT SPECIFIED | 2 | Dual | NOT SPECIFIED | 2 | R-PDSO-G8 | 8 ns | 13ns | 9 ns | 20 ns | 8A | 20V | SILICON | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 8A | 55 pF | 2 N-Channel (Dual) | 741pF @ 20V | 24m Ω @ 5.3A, 10V | 2.5V @ 250μA | 43nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIE726DF-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie726dft1e3-datasheets-3160.pdf | 10-PolarPAK® (L) | 4 | 10 | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | PURE MATTE TIN | DUAL | 260 | 10 | Single | 30 | 5.2W | 1 | FET General Purpose Power | R-XDSO-N4 | 60 ns | 35ns | 30 ns | 55 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 5.2W Ta 125W Tc | 80A | 0.0033Ohm | 125 mJ | 30V | N-Channel | 7400pF @ 15V | 2.4m Ω @ 25A, 10V | 3V @ 250μA | 60A Tc | 160nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI4900DY-T1-E3 | Vishay Siliconix | $0.98 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si4900dyt1e3-datasheets-5430.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | 58mOhm | 8 | EAR99 | Tin | No | e3 | 2W | GULL WING | 260 | SI4900 | 8 | 2 | Dual | 40 | 2W | 2 | 10 ns | 15ns | 10 ns | 20 ns | 5.3A | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 3.1W | 60V | 2 N-Channel (Dual) | 665pF @ 15V | 58m Ω @ 4.3A, 10V | 3V @ 250μA | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| SI7840BDP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7840bdpt1e3-datasheets-3139.pdf | PowerPAK® SO-8 | 5 | 15 Weeks | 506.605978mg | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 1 | Single | 30 | 1 | FET General Purpose Powers | R-PDSO-C5 | 17 ns | 14ns | 14 ns | 39 ns | 11A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1.8W Ta | 50A | 0.0085Ohm | 20 mJ | N-Channel | 8.5m Ω @ 16.5A, 10V | 3V @ 250μA | 11A Ta | 21nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI7998DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7998dpt1ge3-datasheets-6807.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | Lead Free | 6 | 14 Weeks | 506.605978mg | 9.3mOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | 40W | C BEND | 260 | 8 | 2 | 30 | 2 | FET General Purpose Power | R-XDSO-C6 | 26 ns | 17ns | 10 ns | 35 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 22W 40W | 15A | 60A | 30V | 2 N-Channel (Dual) | 1100pF @ 15V | 9.3m Ω @ 15A, 10V | 2.5V @ 250μA | 25A 30A | 26nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| SUD50P04-23-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50p0423e3-datasheets-3248.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | yes | EAR99 | No | e3 | MATTE TIN OVER NICKEL | GULL WING | 4 | Single | 3.1W | 1 | R-PSSO-G2 | 22 ns | 12ns | 9 ns | 36 ns | 8.2A | 16V | SILICON | DRAIN | AMPLIFIER | 40V | 40V | 3.1W Ta 45.4W Tc | 20A | 50A | 20 mJ | P-Channel | 1880pF @ 20V | 23m Ω @ 15A, 10V | 2V @ 250μA | 8.2A Ta 20A Tc | 65nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1034X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si1034xt1ge3-datasheets-8955.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 6 | 14 Weeks | 32.006612mg | 10Ohm | 3 | yes | EAR99 | LOW THRESHOLD | Tin | No | e3 | 250mW | FLAT | 260 | SI1034 | 6 | 2 | Dual | 40 | 250mW | 2 | FET General Purpose Powers | R-PDSO-F6 | 50 ns | 25ns | 25 ns | 50 ns | 200mA | 5V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.18A | 20V | 2 N-Channel (Dual) | 1.2 V | 5 Ω @ 200mA, 4.5V | 1.2V @ 250μA | 180mA | 0.75nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| SUD50N03-16P-E3 | Vishay Siliconix | $2.85 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n0316pe3-datasheets-3289.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 3 | Single | 6.5W | 1 | TO-252, (D-Pak) | 1.15nF | 20ns | 12 ns | 25 ns | 15A | 20V | 30V | 30V | 6.5W Ta 40.8W Tc | 16mOhm | 30V | N-Channel | 1150pF @ 25V | 16mOhm @ 15A, 10V | 3V @ 250μA | 13nC @ 4.5V | 16 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP450PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfp450pbf-datasheets-1281.pdf | 500V | 14A | TO-247-3 | 15.87mm | 24.86mm | 5.31mm | Lead Free | 3 | 12 Weeks | 38.000013g | Unknown | 400mOhm | 3 | 5.45mm | AVALANCHE RATED | Tin | No | 3 | 1 | Single | 190W | 1 | 150°C | 17 ns | 47ns | 44 ns | 92 ns | 14A | 20V | 500V | SILICON | SWITCHING | 4V | 190W Tc | 810 ns | 56A | 760 mJ | 500V | N-Channel | 2600pF @ 25V | 2 V | 400m Ω @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SUP60N10-16L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sup60n1016le3-datasheets-3351.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 6.000006g | 16mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | 1 | Single | 150W | 1 | FET General Purpose Power | 12 ns | 90ns | 130 ns | 55 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 100V | 150W Tc | TO-220AB | N-Channel | 3820pF @ 25V | 16m Ω @ 30A, 10V | 3V @ 250μA | 60A Tc | 110nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI4202DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si4202dyt1ge3-datasheets-4992.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 14 Weeks | 506.605978mg | No SVHC | 14MOhm | 8 | No | 75A | 30V | 3.7W | 2 | Dual | 2.4W | 2 | 8-SO | 710pF | 8 ns | 12.1A | 20V | 30V | 1V | 3.7W | 17mOhm | 30V | 2 N-Channel (Dual) | 710pF @ 15V | 14mOhm @ 8A, 10V | 2.5V @ 250μA | 12.1A | 17nC @ 10V | Logic Level Gate | 14 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8405DB-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8405dbt1e1-datasheets-6204.pdf | 4-XFBGA, CSPBGA | 1.6mm | 360μm | 1.6mm | 4 | No | 1 | Single | 2.77W | 4-Microfoot | 16 ns | 32ns | 32 ns | 120 ns | -3.6A | 8V | 12V | 1.47W Ta | 55mOhm | -12V | P-Channel | 55mOhm @ 1A, 4.5V | 950mV @ 250μA | 3.6A Ta | 21nC @ 4.5V | 55 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7212DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7212dnt1e3-datasheets-2260.pdf | PowerPAK® 1212-8 Dual | 6 | 14 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.3W | C BEND | 260 | SI7212 | 8 | Dual | 30 | 1.3W | 2 | FET General Purpose Power | S-XDSO-C6 | 10 ns | 12ns | 10 ns | 30 ns | 4.9A | 12V | SILICON | DRAIN | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 0.036Ohm | 5 mJ | 30V | 2 N-Channel (Dual) | 36m Ω @ 6.8A, 10V | 1.6V @ 250μA | 11nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR172DP-T1-GE3 | Vishay Siliconix | $0.10 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir172dpt1ge3-datasheets-8454.pdf | PowerPAK® SO-8 | Lead Free | 5 | 12 Weeks | 506.605978mg | Unknown | 12.4MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.9W | 1 | FET General Purpose Power | R-XDSO-C5 | 19 ns | 19ns | 13 ns | 19 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 2.5V | 29.8W Tc | 50A | 22 mJ | N-Channel | 997pF @ 15V | 2.5 V | 8.9m Ω @ 16.1A, 10V | 2.5V @ 250μA | 20A Tc | 30nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SQ2319ADS-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sq2319adst1ge3-datasheets-7856.pdf | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 40V | 2.5W Tc | P-Channel | 620pF @ 20V | 75m Ω @ 3A, 10V | 2.5V @ 250μA | 4.6A Tc | 16nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4836DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si4836dyt1ge3-datasheets-6582.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 3mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | Single | 40 | 1.6W | 1 | FET General Purpose Power | 860pF | 35 ns | 41ns | 115 ns | 190 ns | 17A | 8V | SILICON | SWITCHING | 1.6W Ta | 12V | N-Channel | 3m Ω @ 25A, 4.5V | 400mV @ 250μA (Min) | 17A Ta | 75nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SIB452DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sib452dkt1ge3-datasheets-9461.pdf | PowerPAK® SC-75-6L | 1.6mm | 750μm | 1.6mm | Lead Free | 6 | 14 Weeks | 95.991485mg | Unknown | 2.4Ohm | 6 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 6 | 1 | 40 | 2.4W | 1 | FET General Purpose Power | 12 ns | 16ns | 15 ns | 30 ns | 1.5A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.5V | 2.4W Ta 13W Tc | 190V | N-Channel | 135pF @ 50V | 2.4 Ω @ 500mA, 4.5V | 1.5V @ 250μA | 1.5A Tc | 6.5nC @ 10V | 1.8V 4.5V | ±16V | |||||||||||||||||||||||||||||||||||||||||
| SIB417AEDK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sib417aedkt1ge3-datasheets-3636.pdf | PowerPAK® SC-75-6L | Lead Free | 3 | 32mOhm | 6 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 1 | 2.4W | 1 | Other Transistors | S-PDSO-N3 | 19 ns | 27ns | 29 ns | 32 ns | 9A | 5V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.4W Ta 13W Tc | 9A | 8V | P-Channel | 878pF @ 4V | 32m Ω @ 3A, 4.5V | 1V @ 250μA | 9A Tc | 18.5nC @ 5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF510PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irf510pbf-datasheets-0849.pdf | 100V | 5.6A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 540mOhm | 3 | Tin | No | 1 | Single | 43W | 1 | TO-220AB | 180pF | 6.9 ns | 16ns | 9.4 ns | 15 ns | 5.6A | 20V | 100V | 4V | 43W Tc | 200 ns | 540mOhm | 100V | N-Channel | 180pF @ 25V | 4 V | 540mOhm @ 3.4A, 10V | 4V @ 250μA | 5.6A Tc | 8.3nC @ 10V | 540 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| 2N6661JTXP02 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishay-2n6661jtxp02-datasheets-9343.pdf | TO-205AD, TO-39-3 Metal Can | 3 | 36 Weeks | 3 | no | EAR99 | LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | unknown | 8541.21.00.95 | BOTTOM | WIRE | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Powers | Not Qualified | 860mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 90V | 90V | 725mW Ta 6.25W Tc | 0.86A | 4Ohm | 10 pF | N-Channel | 50pF @ 25V | 4 Ω @ 1A, 10V | 2V @ 1mA | 860mA Tc | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50P08-25L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sud50p0825le3-datasheets-1721.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.507mm | 6.22mm | Lead Free | 2 | 14 Weeks | 1.437803g | No SVHC | 25.2mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 30 | 8.3W | 1 | Other Transistors | 175°C | R-PSSO-G2 | 45 ns | 25ns | 100 ns | 95 ns | -12.5A | 20V | SILICON | DRAIN | SWITCHING | 80V | -3V | 8.3W Ta 136W Tc | 50A | 40A | -80V | P-Channel | 4700pF @ 40V | 25.2m Ω @ 12.5A, 10V | 3V @ 250μA | 50A Tc | 160nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRFP22N60K | Vishay Siliconix | $1.26 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp22n60kpbf-datasheets-2968.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 38.000013g | 3 | No | 1 | Single | 370W | TO-247-3 | 3.57nF | 26 ns | 99ns | 37 ns | 48 ns | 22A | 30V | 600V | 370W Tc | 280mOhm | 600V | N-Channel | 3570pF @ 25V | 280mOhm @ 13A, 10V | 5V @ 250μA | 22A Tc | 150nC @ 10V | 280 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM110P06-07L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sum110p0607le3-datasheets-3353.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 5.08mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.946308g | No SVHC | 6.9MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 30 | 3.75W | 1 | Other Transistors | 175°C | R-PSSO-G2 | 20 ns | 160ns | 240 ns | 110 ns | -11A | 20V | SILICON | SWITCHING | 60V | -3V | 3.75W Ta 375W Tc | 240A | -60V | P-Channel | 11400pF @ 25V | -3 V | 6.9m Ω @ 30A, 10V | 3V @ 250μA | 110A Tc | 345nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| 2N6660JTXP02 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6660e3-datasheets-9278.pdf | TO-205AD, TO-39-3 Metal Can | 3 | 18 Weeks | 3 | EAR99 | unknown | 8541.21.00.95 | BOTTOM | WIRE | 2 | 1 | FET General Purpose Powers | 990mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | AMPLIFIER | 60V | 60V | 725mW Ta 6.25W Tc | 0.99A | 3Ohm | 10 pF | N-Channel | 50pF @ 25V | 3 Ω @ 1A, 10V | 2V @ 1mA | 990mA Tc | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7178DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si7178dpt1ge3-datasheets-5111.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 14mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 6.25W | 1 | FET General Purpose Power | R-XDSO-C5 | 21 ns | 10ns | 11 ns | 27 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 4.5V | 6.25W Ta 104W Tc | 100V | N-Channel | 2870pF @ 50V | 4.5 V | 14m Ω @ 10A, 10V | 4.5V @ 250μA | 60A Tc | 72nC @ 10V | 10V | ±20V |
