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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI5504BDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | 8-SMD, Flat Lead | Lead Free | 8 | 14 Weeks | 84.99187mg | Unknown | 140mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 3.1W | DUAL | C BEND | 260 | SI5504 | 8 | 2 | 30 | 1.5W | 2 | Other Transistors | 3.7A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 3.12W 3.1W | 4A | 10A | 30V | N and P-Channel | 220pF @ 15V | 1.5 V | 65m Ω @ 3.1A, 10V | 3V @ 250μA | 4A 3.7A | 7nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIE806DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie806dft1e3-datasheets-6367.pdf | 10-PolarPAK® (L) | 4 | 10 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | 260 | 10 | Single | 30 | 5.2W | 1 | FET General Purpose Powers | R-PDSO-N4 | 85 ns | 41.3A | 12V | SILICON | DRAIN | SWITCHING | 5.2W Ta 125W Tc | 60A | 0.0021Ohm | 125 mJ | 30V | N-Channel | 13000pF @ 15V | 1.7m Ω @ 25A, 10V | 2V @ 250μA | 60A Tc | 250nC @ 10V | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1902DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si1902dlt1e3-datasheets-4051.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 14 Weeks | 7.512624mg | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 270mW | GULL WING | SI1902 | 6 | Dual | 270mW | 2 | 10 ns | 16ns | 10 ns | 10 ns | 660mA | 12V | SILICON | 20V | METAL-OXIDE SEMICONDUCTOR | 0.385Ohm | 2 N-Channel (Dual) | 385m Ω @ 660mA, 4.5V | 1.5V @ 250μA | 1.2nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD08P06-155L-T4E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 450pF | 8.4A | 60V | 1.7W Ta 20.8W Tc | P-Channel | 450pF @ 25V | 155mOhm @ 5A, 10V | 3V @ 250μA | 8.4A Tc | 19nC @ 10V | 155 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1926DL-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si1926dlt1ge3-datasheets-1035.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | Lead Free | 6 | 14 Weeks | 28.009329mg | No SVHC | 1.4Ohm | 6 | yes | EAR99 | Tin | No | e3 | 510mW | GULL WING | 260 | SI1926 | 6 | Dual | 40 | 300mW | 2 | FET General Purpose Power | 6.5 ns | 12ns | 12 ns | 13 ns | 370mA | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 2.5V | 0.34A | 60V | 2 N-Channel (Dual) | 18.5pF @ 30V | 1.4 Ω @ 340mA, 10V | 2.5V @ 250μA | 1.4nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| SUD50N03-06P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sud50n0306pe3-datasheets-3279.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.223mm | Lead Free | Unknown | 6.5MOhm | 2 | Single | 8.3W | TO-252, (D-Pak) | 3.1nF | 12 ns | 12ns | 10 ns | 30 ns | 30A | 20V | 30V | 8.3W Ta 88W Tc | 6.5mOhm | 30V | N-Channel | 3100pF @ 25V | 3 V | 6.5mOhm @ 20A, 10V | 3V @ 250μA | 84A Tc | 30nC @ 4.5V | 6.5 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM110P06-08L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sum110p0608le3-datasheets-0484.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 5.08mm | 9.65mm | Lead Free | 14 Weeks | 1.437803g | No SVHC | 8MOhm | 3 | Tin | No | 1 | Single | 3.75W | 1 | 175°C | TO-263 (D2Pak) | 9.2nF | 20 ns | 190ns | 300 ns | 140 ns | -110A | 20V | 60V | -1V | 3.75W Ta 272W Tc | 6.5mOhm | -60V | P-Channel | 9200pF @ 25V | 8mOhm @ 30A, 10V | 3V @ 250μA | 110A Tc | 240nC @ 10V | 8 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SUP90N08-6M8P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sup90n086m8pe3-datasheets-3325.pdf | TO-220-3 | 3 | No SVHC | 3 | EAR99 | No | 3 | Single | 3.75W | 1 | FET General Purpose Power | 16 ns | 11ns | 10 ns | 24 ns | 90A | 20V | 75V | SILICON | SWITCHING | 3.75W Ta 272W Tc | TO-220AB | 240A | 0.0068Ohm | 75V | N-Channel | 4620pF @ 30V | 6.8m Ω @ 20A, 10V | 4.5V @ 250μA | 90A Tc | 115nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ504EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj504ept1ge3-datasheets-4880.pdf | PowerPAK® SO-8 Dual | 12 Weeks | PowerPAK® SO-8 Dual | 40V | 34W Tc | N and P-Channel | 1900pF @ 25V 4600pF @ 25V | 7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V | 2.5V @ 250μA | 30A Tc | 30nC @ 10V, 85nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP65P04-15-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sup65p0415e3-datasheets-3513.pdf | TO-220-3 | Lead Free | 3 | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | Single | 3.75W | 1 | Other Transistors | 15 ns | 380ns | 140 ns | 75 ns | -65A | 20V | SILICON | DRAIN | -3V | 3.75W Ta 120W Tc | TO-220AB | 240A | 40V | P-Channel | 5400pF @ 25V | -3 V | 15m Ω @ 30A, 10V | 3V @ 250μA | 65A Tc | 130nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7997DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7997dpt1ge3-datasheets-5919.pdf | PowerPAK® SO-8 Dual | 1.12mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 5.5mOhm | 8 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | 46W | C BEND | 260 | SI7997 | 8 | Dual | 40 | 3.5W | 2 | Other Transistors | Not Qualified | 150°C | R-XDSO-C5 | 15 ns | 40 ns | 115 ns | -20.8A | 20V | SILICON | DRAIN | 30V | METAL-OXIDE SEMICONDUCTOR | -2.2V | 60A | 100A | 45 mJ | -30V | 2 P-Channel (Dual) | 6200pF @ 15V | 5.5m Ω @ 20A, 10V | 2.2V @ 250μA | 60A | 160nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||
| SI8805EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8805edbt2e1-datasheets-6973.pdf | 4-XFBGA | 4 | 15 Weeks | 4 | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | BALL | 4 | 1 | Single | 500mW | 1 | Other Transistors | 13 ns | 13ns | 17 ns | 25 ns | -3.1A | 5V | SILICON | SWITCHING | 8V | 8V | 500mW Ta | 0.088Ohm | P-Channel | 68m Ω @ 1.5A, 4.5V | 700mV @ 250μA | 10nC @ 4.5V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA427DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sia427djt1ge3-datasheets-7386.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | Lead Free | 4 | 14 Weeks | Unknown | 13mOhm | 6 | yes | EAR99 | No | DUAL | 260 | 6 | 1 | Single | 40 | 3.5W | 1 | Other Transistors | S-PDSO-N4 | 20 ns | 20ns | 40 ns | 70 ns | 12A | 5V | SILICON | DRAIN | SWITCHING | 8V | 350mV | 3.5W Ta 19W Tc | 50A | -8V | P-Channel | 2300pF @ 4V | 16m Ω @ 8.2A, 4.5V | 800mV @ 250μA | 12A Tc | 50nC @ 5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||||
| SUM110N05-06L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount, Through Hole | Surface Mount | Digi-Reel® | 1 (Unlimited) | SMD/SMT | 175°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sum110n0506le3-datasheets-3043.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.414mm | 4.826mm | 9.652mm | Lead Free | 2 | No SVHC | 6mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 36W | GULL WING | 4 | Single | 3.7W | 1 | FET General Purpose Powers | R-PSSO-G2 | 15 ns | 15ns | 15 ns | 35 ns | 110A | 20V | 55V | SWITCHING | 70 ns | 240A | 55V | N-Channel | 3300pF @ 25V | 3 V | 6m Ω @ 30A, 10V | 3V @ 250μA | 110A Tc | 100nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI7615ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7615adnt1ge3-datasheets-9012.pdf | PowerPAK® 1212-8 | 3.4mm | 1.12mm | 3.4mm | Lead Free | 5 | 14 Weeks | No SVHC | 4.4mOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 1 | Single | 40 | 3.7W | 1 | 150°C | S-PDSO-C5 | 13 ns | 40ns | 26 ns | 85 ns | -22.1A | 12V | SILICON | DRAIN | SWITCHING | 20V | -400mV | 3.7W Ta 52W Tc | 35A | 20 mJ | -20V | P-Channel | 5590pF @ 10V | 4.4m Ω @ 20A, 10V | 1.5V @ 250μA | 35A Tc | 183nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||
| SI1307DL-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si1307dlt1ge3-datasheets-6164.pdf | SC-70, SOT-323 | 2.1844mm | 990.6μm | 1.3462mm | Lead Free | 3 | 290mOhm | 3 | yes | EAR99 | 68A | unknown | e3 | MATTE TIN | 12V | DUAL | GULL WING | 260 | 3 | Single | 40 | 290mW | 1 | Not Qualified | 7.5 ns | 32ns | 32 ns | 17 ns | 850mA | 8V | SILICON | 290mW Ta | -12V | P-Channel | 290m Ω @ 1A, 4.5V | 450mV @ 250μA (Min) | 850mA Ta | 5nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI7116DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7116dnt1e3-datasheets-0566.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 7.8mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | FET General Purpose Powers | S-XDSO-C5 | 10 ns | 15ns | 15 ns | 36 ns | 16.4A | 20V | SILICON | DRAIN | SWITCHING | 40V | 40V | 2.5V | 1.5W Ta | 60A | N-Channel | 7.8m Ω @ 16.4A, 10V | 2.5V @ 250μA | 10.5A Ta | 23nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| 2N6661JTXV02 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-2n6661jtxl02-datasheets-9341.pdf | TO-205AD, TO-39-3 Metal Can | 3 | 3 | no | EAR99 | LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | No | BOTTOM | WIRE | 2 | 725mW | 1 | FET General Purpose Powers | 860mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 90V | 90V | 725mW Ta 6.25W Tc | 0.86A | 4Ohm | N-Channel | 50pF @ 25V | 4 Ω @ 1A, 10V | 2V @ 1mA | 860mA Tc | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7469DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7469dpt1ge3-datasheets-1434.pdf | PowerPAK® SO-8 | 4.9mm | 1.12mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 25MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) - annealed | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 83W | 1 | Other Transistors | 150°C | R-PDSO-C5 | 15 ns | 25ns | 100 ns | 105 ns | -28A | 20V | SILICON | DRAIN | 80V | -3V | 5.2W Ta 83.3W Tc | 40A | -80V | P-Channel | 4700pF @ 40V | -3 V | 25m Ω @ 10.2A, 10V | 3V @ 250μA | 28A Tc | 160nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| 2N6660JTX02 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6660e3-datasheets-9278.pdf | TO-205AD, TO-39-3 Metal Can | Contains Lead | 3 | 3 | EAR99 | No | BOTTOM | WIRE | 2 | 725mW | 1 | FET General Purpose Powers | 990mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | AMPLIFIER | 60V | 60V | 725mW Ta 6.25W Tc | 0.99A | 3Ohm | N-Channel | 50pF @ 25V | 3 Ω @ 1A, 10V | 2V @ 1mA | 990mA Tc | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD40N10-25-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sud40n1025e3-datasheets-2374.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | No SVHC | 25mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 4 | Single | 30 | 3W | 1 | FET General Purpose Power | R-PSSO-G2 | 8 ns | 40ns | 80 ns | 15 ns | 40A | 20V | SILICON | DRAIN | 3V | 3W Ta 136W Tc | TO-252AA | 70A | 80 mJ | 100V | N-Channel | 2400pF @ 25V | 3 V | 25m Ω @ 40A, 10V | 3V @ 250μA | 40A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SIS334DN-T1-GE3 | Vishay Siliconix | $0.55 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis334dnt1ge3-datasheets-9524.pdf | PowerPAK® 1212-8 | 5 | 8 | EAR99 | No | DUAL | C BEND | 8 | 1 | Single | 3.8W | 1 | FET General Purpose Power | S-XDSO-C5 | 9 ns | 10ns | 8 ns | 15 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 3.8W Ta 50W Tc | 50A | 30V | N-Channel | 640pF @ 15V | 11.3m Ω @ 10A, 10V | 2.4V @ 250μA | 20A Tc | 18nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7148DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-si7148dpt1e3-datasheets-4845.pdf | PowerPAK® SO-8 | 4.9mm | 1.17mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 11mOhm | 8 | yes | EAR99 | AVALANCHE RATED | Tin | No | S17-0173-Single | e3 | DUAL | FLAT | 8 | 1 | Single | 5.4W | 1 | 150°C | R-PDSO-F5 | 17 ns | 255ns | 100 ns | 39 ns | 28A | 20V | 75V | SILICON | DRAIN | SWITCHING | 2V | 5.4W Ta 96W Tc | 60A | 75V | N-Channel | 2900pF @ 35V | 90ns | 96ns | 2 V | 11m Ω @ 15A, 10V | 2.5V @ 250μA | 28A Tc | 100nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SUD06N10-225L-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1995 | /files/vishaysiliconix-sud06n10225lge3-datasheets-0233.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | 1.437803g | No SVHC | 200mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | SUD06N10 | 4 | 1 | Single | 30 | 1 | R-PSSO-G2 | 7 ns | 8ns | 9 ns | 8 ns | 6.5A | 20V | SILICON | DRAIN | 1.25W Ta 16.7W Tc | 8A | 100V | N-Channel | 240pF @ 25V | 200m Ω @ 3A, 10V | 3V @ 250μA | 6.5A Tc | 4nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SI7820DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si7820dnt1ge3-datasheets-7585.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.5W | 1 | FET General Purpose Power | S-XDSO-C5 | 11 ns | 12ns | 12 ns | 30 ns | 2.6A | 20V | SILICON | DRAIN | SWITCHING | 4V | 1.5W Ta | 0.24Ohm | 0.6 mJ | 200V | N-Channel | 240m Ω @ 2.6A, 10V | 4V @ 250μA | 1.7A Ta | 18nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SIHB22N60S-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihb22n60se3-datasheets-9796.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | Unknown | 190mOhm | 3 | yes | No | GULL WING | 260 | 4 | Single | 40 | 250W | 1 | FET General Purpose Power | R-PSSO-G2 | 24 ns | 68ns | 59 ns | 77 ns | 22A | 20V | DRAIN | SWITCHING | 2V | 250W Tc | 65A | 690 mJ | 600V | N-Channel | 2810pF @ 25V | 190m Ω @ 11A, 10V | 4V @ 250μA | 22A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7336ADP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7336adpt1e3-datasheets-8486.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 3mOhm | 8 | yes | EAR99 | ULTRA-LOW RESISTANCE | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 5.4W | 1 | FET General Purpose Powers | R-XDSO-C5 | 24 ns | 16ns | 32 ns | 90 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 1V | 5.4W Ta | 70A | 30V | N-Channel | 5600pF @ 15V | 1 V | 3m Ω @ 25A, 10V | 3V @ 250μA | 30A Ta | 50nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SUM25P10-138-E3 | Vishay Siliconix | $9.55 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum25p10138e3-datasheets-2086.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | No SVHC | 3 | EAR99 | unknown | SINGLE | GULL WING | 1 | R-PSSO-G2 | 16.7A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | P-CHANNEL | 100V | 100V | 3.75W Ta 88.2W Tc | 40A | 0.142Ohm | N-Channel | 2110pF @ 25V | 13.8m Ω @ 6A, 10V | 4V @ 250μA | 16.7A Tc | 60nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7884BDP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7884bdpt1ge3-datasheets-8917.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 7.5mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 4.6W | 1 | FET General Purpose Power | R-XDSO-C5 | 30 ns | 14ns | 11 ns | 38 ns | 58A | 20V | SILICON | DRAIN | SWITCHING | 3V | 4.6W Ta 46W Tc | 50A | 54 mJ | 40V | N-Channel | 3540pF @ 20V | 7.5m Ω @ 16A, 10V | 3V @ 250μA | 58A Tc | 77nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SMM2348ES-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-smm2348est1ge3-datasheets-3544.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 25 Weeks | EAR99 | unknown | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | 30V | 30V | 3W Tc | 8A | 0.024Ohm | 50 pF | N-Channel | 540pF @ 15V | 24m Ω @ 12A, 10V | 2.5V @ 250μA | 8A Tc | 14.5nC @ 10V | 4.5V 10V | ±20V |
